Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy

(In, Ga) alloy droplets are used to catalyse the growth of (In, Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of these nanowires can be tuned by the employed elemental fluxes. To incorporate more than 10% of In, a high In/(In+Ga) flux ratio above 0.7 is required. We report a maximum In content of almost 30% in bulk (In, Ga)As nanowires for an In/(In+Ga) flux ratio of 0.8. However, with increasing In/(In+Ga) flux ratio, the nanowire length and diameter are notably reduced. Using photoluminescence and cathodoluminescence spectroscopy on nanowires covered by a passivating (In, Al)As shell, two luminescence bands are observed. A significant segment of the nanowires shows homogeneous emission, with a wavelength corresponding to the In content in this segment, while the consumption of the catalyst droplet leads to a spectrally-shifted emission band at the top of the nanowires. The (In,Ga)As nanowires studied in this work provide a new approach for the integration of infrared emitters on Si platforms.

Nano antenna-assisted quantum dots emission into high-index planar waveguide

Integrated quantum photonic circuits require the efficient coupling of photon sources to photonic waveguides. Hybrid plasmonic/photonic platforms are a promising approach, taking advantage of both plasmon modal confinement for efficient coupling to a nearby emitter and photonic circuitry for optical data transfer and processing. In this work, we established directional quantum dot (QD) emission coupling to a planar TiO2waveguide assisted by a Yagi-Uda antenna. Antenna on waveguide is first designed by scaling radio frequency dimensions to nano-optics, taking into account the hybrid plasmonic/photonic platform. Design is then optimized by full numerical simulations. We fabricate the antenna on a TiO2planar waveguide and deposit a few QDs close to the Yagi-Uda antenna. The optical characterization shows clear directional coupling originating from antenna effect. We estimate the coupling efficiency and directivity of the light emitted into the waveguide.

Comparison of Microcomb-Based Radio-Frequency Photonic Transversal Signal Processors Implemented with Discrete Components Versus Integrated Chips

RF photonic transversal signal processors, which combine reconfigurable electrical digital signal processing and high-bandwidth photonic processing, provide a powerful solution for achieving adaptive high-speed information processing. Recent progress in optical microcomb technology provides compelling multi-wavelength sources with a compact footprint, yielding a variety of microcomb-based RF photonic transversal signal processors with either discrete or integrated components. Although they operate based on the same principle, the processors in these two forms exhibit distinct performances. This paper presents a comparative investigation of their performances. First, we compare the performances of state-of-the-art processors, focusing on the processing accuracy. Next, we analyze various factors that contribute to the performance differences, including the tap number and imperfect response of experimental components. Finally, we discuss the potential for future improvement. These results provide a comprehensive comparison of microcomb-based RF photonic transversal signal processors implemented using discrete and integrated components and provide insights for their future development.

Multiband Signal Receiver by Using an Optical Bandpass Filter Integrated with a Photodetector on a Chip

Photonic integration brings the promise of significant cost, power and space savings and propels the real applications of microwave photonic technology. In this paper, a multiband radio frequency (RF) signal simultaneous receiver using an optical bandpass filter (OBPF) integrated with a photodetector (PD) on a chip is proposed, which was experimentally demonstrated. The OBPF was composed of ring-assisted Mach-Zehnder interferometer with a periodical bandpass response featuring a box-like spectral shape. The OBPF was connected to a PD and then integrated onto a single silicon photonic chip. Phase-modulated multiband RF signals transmitted from different locations were inputted into the OBPF, by which one RF sideband was filtered out and the phase modulation to intensity modulation conversion was realized. The single sideband with carrier signals were then simultaneously detected by the PD. A proof-of-concept experiment with the silicon photonic integrated chip was implemented to simultaneously receive four channels of 8 GHz, 12 GHz, 14 GHz and 18 GHz in the X- and Ku-bands. The performance of the integrated microwave photonic multiband receiver-including the receiving sensitivity, the spurious free dynamic range, the gain and the noise figure across the whole operation frequency band-was characterized in detail.

Emerging Light-Emitting Materials for Photonic Integration

The arrival of the information explosion era is urging the development of large-bandwidth high-data-rate optical interconnection technology. Up to now, the biggest stumbling block in optical interconnections has been the lack of efficient light sources despite significant progress that has been made in germanium-on-silicon (Ge-on-Si) and III-V-on-silicon (III-V-on-Si) lasers. 2D materials and metal halide perovskites have attracted much attention in recent years, and exhibit distinctive advantages in the application of on-chip light emitters. Herein, this Progress Report reviews the recent progress made in light-emitting materials with a focus on new materials, i.e., 2D materials and metal halide perovskites. The report briefly introduces the current status of Ge-on-Si and III-V-on-Si lasers and discusses the advances of 2D and perovskite light-emitting materials for photonic integration, including their optical properties, preparation methods, as well as the light sources based on these materials. Finally, challenges and perspectives of these emerging materials on the way to the efficient light sources are discussed.

Ultracompact Chip-Scale Refractometer Based on an InGaN-Based Monolithic Photonic Chip

Optical refractometer constitutes the core element for many applications, from determining the purity and concentration of pharmaceutical ingredients to measuring the sugar content in food and beverages, and the analysis of petroleum. Here, we demonstrated the monolithic integration of light-emitting diodes (LEDs) and photodetectors (PDs) to fabricate ultracompact refractometers with a chip size of 475 × 320 μm². The light emission and photodetection properties of the devices containing the same InGaN/GaN multi-quantum wells have been characterized, confirming that the PD can respond to the emission of the LED. The flip-chip assembly of the chip enables the exposed sapphire substrate to be in direct contact with the solution, and the refractive index sensing capability governed by the change of critical angle and Fresnel reflection at the sapphire/solution interface has been investigated. The processing of the optically smooth surface of sapphire and the integration of high-reflectance distributed Bragg reflector beneath the devices facilitate the amount of light received by the PD. The monolithic chip is capable of detecting solutions with a refractive index ranging from 1.3325 to 1.5148 RIU and exhibits a sensitivity of 7.77 μA/RIU and a resolution of 6.4 × 10^-6 RIU at the LED current of 10 mA. Rapid real-time responses of 33.9 ms for rise time and 34.7 ms for fall time are obtained in the detected photocurrent, thereby verifying the feasibility of the chip-scale refractometer.

Vertically Emitting Indium Phosphide Nanowire Lasers

Semiconductor nanowire (NW) lasers have attracted considerable research effort given their excellent promise for nanoscale photonic sources. However, NW lasers currently exhibit poor directionality and high threshold gain, issues critically limiting their prospects for on-chip light sources with extremely reduced footprint and efficient power consumption. Here, we propose a new design and experimentally demonstrate a vertically emitting indium phosphide (InP) NW laser structure showing high emission directionality and reduced energy requirements for operation. The structure of the laser combines an InP NW integrated in a cat's eye (CE) antenna. Thanks to the antenna guidance with broken asymmetry, strong focusing ability, and high Q-factor, the designed InP CE-NW lasers exhibit a higher degree of polarization, narrower emission angle, enhanced internal quantum efficiency, and reduced lasing threshold. Hence, this NW laser-antenna system provides a very promising approach toward the achievement of high-performance nanoscale lasers, with excellent prospects for use as highly localized light sources in present and future integrated nanophotonics systems for applications in advanced sensing, high-resolution imaging, and quantum communications.

Wavelength Division Multiplexer Based on Semiconductor Heterostructures Constructed via Nanoarchitectonics

Obtaining a wavelength division multiplexer (WDM) at the micro/nanometer level is a considerable challenge that holds great potential in optical communication technology owing to the enlarged data-carrying capacity without laying more fibers. Of the progress that has been made in recent years, one of the most promising methods is to fabricate nanoscale pattern on silicon substrate, forcing signals of different wavelength to enter predesigned channels due to the alternant changes in refractive index. However, it is not an easy task to incorporate light sources into these WDM systems, because of the nonradiative characteristics of silicon itself. This study demonstrates a successful integration of laser signal sources and WDM fully with 1D semiconductor structures. Nanowires from II-VI semiconductor serve as both lasing media and low-loss waveguides for signal loading and delivering, respectively. On the basis of the distinct size-dependent cut-off effect, finely tuning the diameters of homojunctions would result in a controllable filtering of confined signal that light, beyond cut-off wavelength, cannot transfer within the narrowed segments any longer. These results pave the way for semiconductor photonic components toward integration.

Integration of Semiconductor Nanowire Lasers with Polymeric Waveguide Devices on a Mechanically Flexible Substrate

Nanowire lasers are integrated with planar waveguide devices using a high positional accuracy microtransfer printing technique. Direct nanowire to waveguide coupling is demonstrated, with coupling losses as low as -17 dB, dominated by mode mismatch between the structures. Coupling is achieved using both end-fire coupling into a waveguide facet, and from nanowire lasers printed directly onto the top surface of the waveguide. In-waveguide peak powers up to 11.8 μW are demonstrated. Basic photonic integrated circuit functions such as power splitting and wavelength multiplexing are presented. Finally, devices are fabricated on a mechanically flexible substrate to demonstrate robust coupling between the on-chip laser source and waveguides under significant deformation of the system.

Transfer Printing of Semiconductor Nanowires with Lasing Emission for Controllable Nanophotonic Device Fabrication

Accurate positioning and organization of indium phosphide (InP) nanowires (NWs) with lasing emission at room temperature is achieved using a nanoscale transfer printing (TP) technique. The NWs retained their lasing emission after their transfer to targeted locations on different receiving substrates (e.g., polymers, silica, and metal surfaces). The NWs were also organized into complex spatial patterns, including 1D and 2D arrays, with a controlled number of elements and dimensions. The developed TP technique enables the fabrication of bespoke nanophotonic systems using NW lasers and other NW devices as building blocks.