Assessment of dynamic cerebral autoregulation in near-infrared spectroscopy using short channels: A feasibility study in acute ischemic stroke patients

Introduction

In acute ischemic stroke, progressive impairment of cerebral autoregulation (CA) is frequent and associated with unfavorable outcomes. Easy assessment of cerebral blood flow and CA in stroke units bedside tools like near-infrared spectroscopy (NIRS) might improve early detection of CA deterioration. This study aimed to assess dynamic CA with multichannel CW-NIRS in acute ischemic stroke (AIS) patients compared to agematched healthy controls.

Methods

CA reaction was amplified by changes in head of bed position. Long- and short channels were used to monitor systemic artery pressure- and intracranial oscillations simultaneously. Gain and phase shift in spontaneous low- and very low-frequency oscillations (LFO, VLFO) of blood pressure were assessed.

Results

A total of 54 participants, 27 with AIS and 27 age-matched controls were included. Gain was significantly lower in the AIS group in the LFO range (i) when the upper body was steadily elevated to 30. and (ii) after its abrupt elevation to 30°. No other differences were found between groups.

Discussion

This study demonstrates the feasibility of NIRS short channels to measure CA in AIS patients in one single instrument. A lower gain in AIS might indicate decreased CA activity in this pilot study, but further studies investigating the role of NIRS short channels in AIS are needed.

Improved Self-Heating in Short-Channel Monolayer WS2 Transistors with High-Thermal Conductivity BeO Dielectrics

Two-dimensional semiconducting transition metal dichalcogenides (TMDs) enable ultimate channel length scaling of transistor technology due to their atomic-thin body nature, which also brings the challenge of a pronounced self-heating effect inside the ultrathin channel. In particular, high current density under high electric field could lead to negative differential resistance behavior due to self-heating, not only limiting the current carrying capability of the TMDs transistors but also leading to severe reliability issues. Here, we report high-performance monolayer WS₂ transistors on a high-thermal-conductivity BeO dielectric with effective suppression of the self-heating effects, eliminating the negative differential resistance behavior at high field, as observed in the case of the HfO₂ dielectric. The monolayer CVD WS₂ device on BeO with a 50 nm channel length exhibits a record-high on-state current of 325 μA/μm, transconductance (g_m) of 150 μS/μm, and a on/off ratio of 1.8 × 10⁸ at V_ds = 1 V, far exceeding previous results.

Comparison of short-channel separation and spatial domain filtering for removal of non-neural components in functional near-infrared spectroscopy signals

Significance: With the increasing popularity of functional near-infrared spectroscopy (fNIRS), the need to determine localization of the source and nature of the signals has grown. Aim: We compare strategies for removal of non-neural signals for a finger-thumb tapping task, which shows responses in contralateral motor cortex and a visual checkerboard viewing task that produces activity within the occipital lobe. Approach: We compare temporal regression strategies using short-channel separation to a spatial principal component (PC) filter that removes global signals present in all channels. For short-channel temporal regression, we compare non-neural signal removal using first and combined first and second PCs from a broad distribution of short channels to limited distribution on the forehead. Results: Temporal regression of non-neural information from broadly distributed short channels did not differ from forehead-only distribution. Spatial PC filtering provides results similar to short-channel separation using the temporal domain. Utilizing both first and second PCs from short channels removes additional non-neural information. Conclusions: We conclude that short-channel information in the temporal domain and spatial domain regression filtering methods remove similar non-neural components represented in scalp hemodynamics from fNIRS signals and that either technique is sufficient to remove non-neural components.

How the use of a short channel can improve the separation efficiency of nanoparticles in asymmetrical flow field-flow fractionation

The use of a commercially available short length channel (14 cm length) is proposed to improve the efficiency associated to the separation by asymmetrical flow field-flow fractionation of particles in the nanometer range respect to a standard channel (27 cm length). The effect of channel length on elution times, separation efficiency and resolution have been studied. Polystyrene particles between 50 and 500 nm in size have been used to compare the behavior of both channels. Theoretical aspects based on the different contributions on particle diffusion inside the channel during the separation process have been considered to justify the results obtained. Non-equilibrium diffusion contribution to the efficiency has shown to be the most relevant aspect to be controlled during the separation. The increment of the field strength applied through the cross-flow velocityallows the reduction of diffusion while keep elution times constant. The use of the same cross-flow in a channel with a smaller area is the key factor that justifies the better efficiencies observed along the whole size range studied (improvements that reach factors up to 4.7 in experimental efficiency respect to the standard channel were achieved). The separation of polystyrene particles of 100 and 200 nm was achieved with a resolution of 1.20, whereas a 0.66 value was obtained with the standard channel at the same elution times. Channel recoveries have been also compared under optimized conditions to ensure that no side effects are produced, including the separation of mixtures of TiO₂ nanoparticles. Similar or even better values were obtained with the short length channel, with recoveries higher than 85% for all the polystyrene particles tested and 75% recovery for the TiO₂ nanoparticle mixture, which justifies its use for the separation of nanoparticles, providing better resolutions without compromise elution times or recoveries.

Few-Layered MoS2 Field-Effect Transistors with a Vertical Channel of Sub-10 nm

Few-layered molybdenum disulfide (MoS₂) has demonstrated promising advantages for the integration of next-generation electronic devices. A vertical short-channel MoS₂ transistor with a channel length of sub-10 nm can be realized using mica as the insulated mesa and MoS₂ flake dry-transferred onto the mica as the channel. A near-perfect symmetrical and fully saturated output characteristic can be obtained for the positive or negative drain-source voltage. This result is attributed to an effective transformation of the drain-source electrode contact from Schottky contact to Ohmic contact via forming gas annealing. The vertical-channel MoS₂ transistor with a channel length of 8.7 nm exhibits excellent electrical characteristics, for example, a negligible hysteresis voltage of 60 mV, an extraordinarily small subthreshold swing of 73 mV/dec, a considerably weakened drain-induced barrier-lowering effect (100 mV/V), and the first-reported intrinsic delay time of 2.85 ps. Moreover, a logic inverter can be realized using the two vertical-channel MoS₂ transistors, with a high voltage gain of 33. Experimental results indicate that the developed method is a potential approach for fabricating MoS₂ transistors with an ultrashort channel and high performance, and consequently, manufacturing MoS₂-based integrated circuits.

Photoinduced Tuning of Schottky Barrier Height in Graphene/MoS2 Heterojunction for Ultrahigh Performance Short Channel Phototransistor

Two-dimensional (2D) layered materials with properties such as a large surface-to-volume ratio, strong light interaction, and transparency are expected to be used in future optoelectronic applications. Many studies have focused on ways to increase absorption of 2D-layered materials for use in photodetectors. In this work, we demonstrate another strategy for improving photodetector performance using a graphene/MoS₂ heterojunction phototransistor with a short channel length and a tunable Schottky barrier. The channel length of sub-30 nm, shorter than the diffusion length, decreases carrier recombination and carrier transit time in the channel and improves phototransistor performance. Furthermore, our graphene/MoS₂ heterojunction phototransistor employed a tunable Schottky barrier that is only controlled by light and gate bias. It maintains a low dark current and an increased photocurrent. As a result, our graphene/MoS₂ heterojunction phototransistor showed ultrahigh responsivity and detectivity of 2.2 × 10⁵ A/W and 3.5 × 10¹³ Jones, respectively. This is a considerable improvement compared to previous pristine MoS₂ phototransistors. We confirmed an effective method to develop phototransistors based on 2D materials and obtained ultrahigh performance of our phototransistor, which is promising for high-performance optoelectronic applications.

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates

Two-dimensional transition-metal dichalcogenides (TMDs) are unique candidates for the development of next-generation electronic devices. However, the large contact resistance between metal and the monolayer TMDs have significantly limited the devices' performance. Also, the integration of ultrathin high- k dielectric layers with TMDs remains difficult due to the lack of dangling bonds on the surface of TMDs. We present monolayer molybdenum disulfide field-effect transistors with bottom local gates consisting of monolayer graphene. The atomic-level thickness and surface roughness of graphene facilitate the growth of high-quality ultrathin HfO₂ and suppress gate leakage. Strong displacement fields above 8 V/nm can be applied using a single graphene gate to electrostatically dope the MoS₂, which reduces the contact resistances between Ni and monolayer MoS₂ to 2.3 kΩ·μm at low gate voltages. The devices exhibit excellent switching characteristics including a near-ideal subthreshold slope of 64 millivolts per decade, low threshold voltage (∼0.5 V), high channel conductance (>100 μS/μm), and low hysteresis. Scaled devices with 50 and 14 nm channels as well as ultrathin (5 nm) gate dielectrics show effective immunity to short-channel effects. The device fabricated on flexible polymeric substrate also exhibits high performance and has a fully transparent channel region that is desirable in optical-related studies and practical applications.

Ambipolar Graphene-Quantum Dot Hybrid Vertical Photodetector with a Graphene Electrode

A strategy to fabricate an ambipolar near-infrared vertical photodetector (VPD) by sandwiching a photoactive material as a channel film between the bottom graphene and top metal electrodes was developed. The channel length in the vertical architecture was determined by the channel layer thickness, which can provide an ultrashort channel length without the need for a high-precision manufacturing process. The performance of VPDs with two types of semiconductor layers, a graphene-PbS quantum dot hybrid (GQDH) and PbS quantum dots (QDs), was measured. The GQDH VPD showed better photoelectric properties than the QD VPD because of the high mobility of graphene doped in the channel. The GQDH VPD exhibited excellent photoresponse properties with a responsivity of 1.6 × 10⁴ A/W in the p-type regime and a fast response speed with a rise time of 8 ms. The simple manufacture and the promising photoresponse of the GQDH VPDs reveal that an easy and effective way to fabricate high-performance ambipolar photodetectors was developed.

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors

Two-dimensional semiconductors (2DSCs) such as molybdenum disulfide (MoS₂) have attracted intense interest as an alternative electronic material in the postsilicon era. However, the ON-current density achieved in 2DSC transistors to date is considerably lower than that of silicon devices, and it remains an open question whether 2DSC transistors can offer competitive performance. A high current device requires simultaneous minimization of the contact resistance and channel length, which is a nontrivial challenge for atomically thin 2DSCs, since the typical low contact resistance approaches for 2DSCs either degrade the electronic properties of the channel or are incompatible with the fabrication process for short channel devices. Here, we report a new approach toward high-performance MoS₂ transistors by using a physically assembled nanowire as a lift-off mask to create ultrashort channel devices with pristine MoS₂ channel and self-aligned low resistance metal/graphene hybrid contact. With the optimized contact in short channel devices, we demonstrate sub-100 nm MoS₂ transistor delivering a record high ON-current of 0.83 mA/μm at 300 K and 1.48 mA/μm at 20 K, which compares well with that of silicon devices. Our study, for the first time, demonstrates that the 2DSC transistors can offer comparable performance to the 2017 target for silicon transistors in International Technology Roadmap for Semiconductors (ITRS), marking an important milestone in 2DSC electronics.

Isolating the effects of surface vasculature in infant neuroimaging using short-distance optical channels: a combination of local and global effects

Functional near-infrared spectroscopy (fNIRS) records hemodynamic changes in the cortex arising from neurovascular coupling. However, (noninvasive) fNIRS recordings also record surface vascular signals arising from noncortical sources (e.g., in the skull, skin, dura, and other tissues located between the sensors and the brain). A current and important focus in the fNIRS community is determining how to remove these noncortical vascular signals to reduce noise and to prevent researchers from erroneously attributing responses to cortical sources. The current study is the first to test a popular method for removing signals from the surface vasculature (removing short, 1 cm, channel recordings from long, 3 cm, channel recordings) in human infants, a population frequently studied using fNIRS. We find evidence that this method does remove surface vasculature signals and indicates the presence of both local and global surface vasculature signals. However, we do not find that the removal of this information changes the statistical inferences drawn from the data. This latter result not only questions the importance of removing surface vasculature responses for empiricists employing this method, but also calls for future research using other tasks (e.g., ones with a weaker initial result) with this population and possibly additional methods for removing signals arising from the surface vasculature in infants.

Probing Out-of-Plane Charge Transport in Black Phosphorus with Graphene-Contacted Vertical Field-Effect Transistors

Black phosphorus (BP) has recently emerged as a promising narrow band gap layered semiconductor with optoelectronic properties that bridge the gap between semimetallic graphene and wide band gap transition metal dichalcogenides such as MoS2. To date, BP field-effect transistors have utilized a lateral geometry with in-plane transport dominating device characteristics. In contrast, we present here a vertical field-effect transistor geometry based on a graphene/BP van der Waals heterostructure. The resulting device characteristics include high on-state current densities (>1600 A/cm(2)) and current on/off ratios exceeding 800 at low temperature. Two distinct charge transport mechanisms are identified, which are dominant for different regimes of temperature and gate voltage. In particular, the Schottky barrier between graphene and BP determines charge transport at high temperatures and positive gate voltages, whereas tunneling dominates at low temperatures and negative gate voltages. These results elucidate out-of-plane electronic transport in BP and thus have implications for the design and operation of BP-based van der Waals heterostructures.

Advanced Organic Permeable-Base Transistor with Superior Performance

An optimized vertical organic permeable-base transistor (OPBT) competing with the best organic field-effect transistors in performance, while employing low-cost fabrication techniques, is presented. The OPBT stands out by its excellent power efficiency at the highest frequencies.