Fabrication of magnetic nanodot arrays for patterned magnetic recording media

Fabrication processes of arrayed magnetic nanodots for the use of patterned magnetic recording media were reviewed. One candidate for the patterned media is ordered assemble of magnetic nanoparticles, and the other is patterned magnetic thin films fabricated using various micro/nano scale machining processes. For the formation of patterned masks and molds, lithography processes as well as self-organized pattern formation are utilized. For the deposition processes of magnetic dots, electrochemical deposition processes were widely used. These fabrication processes are reviewed mainly from recent reports. The recording systems for the patterned media including probe-type-recording are also overviewed.

Optical response of photopolymer materials for holographic data storage applications

We briefly review the application of photopolymer recording materials in the area of holographic data storage. In particular we discuss the recent development of the Non-local Polymerisation Driven Diffusion model. Applying this model we develop simple first-order analytic expressions describing the spatial frequency response of photopolymer materials. The assumptions made in the derivation of these formulae are described and their ranges of validity are examined. The effects of particular physical parameters of a photopolymer on the material response are discussed.

Molecular memory based on nanowire-molecular wire heterostructures

This article reviews the recent research of molecular memory based on self-assembled nanowire-molecular wire heterostructures. These devices exploit a novel concept of using redox-active molecules as charge storage flash nodes for nanowire transistors, and thus boast many advantages such as room-temperature processing and nanoscale device area. Various key elements of this technology will be reviewed, including the synthesis of the nanowires and molecular wires, and fabrication and characterization of the molecular memory devices. In particular, multilevel memory has been demonstrated using In2O3 nanowires with self-assembled Fe-bis(terpyridine) molecules, which serve to multiple the charge storage density without increasing the device size. Furthermore, in-depth studies on memory devices made with different molecules or with different functionalization techniques will be reviewed and analyzed. These devices represent a conceptual breakthrough in molecular memory and may work as building blocks for future beyond-CMOS nanoelectronic circuits.

Defect-tolerant architectures for nanoelectronic crossbar memories

We have calculated the maximum useful bit density that may be achieved by the synergy of bad bit exclusion and advanced (BCH) error correcting codes in prospective crossbar nanoelectronic memories, as a function of defective memory cell fraction. While our calculations are based on a particular ("CMOL") memory topology, with naturally segmented nanowires and an area-distributed nano/CMOS interface, for realistic parameters our results are also applicable to "global" crossbar memories with peripheral interfaces. The results indicate that the crossbar memories with a nano/CMOS pitch ratio close to 1/3 (which is typical for the current, initial stage of the nanoelectronics development) may overcome purely semiconductor memories in useful bit density if the fraction of nanodevice defects (stuck-on-faults) is below approximately 15%, even under rather tough, 30 ns upper bound on the total access time. Moreover, as the technology matures, and the pitch ratio approaches an order of magnitude, the crossbar memories may be far superior to the densest semiconductor memories by providing, e.g., a 1 Tbit/cm2 density even for a plausible defect fraction of 2%. These highly encouraging results are much better than those reported in literature earlier, including our own early work, mostly due to more advanced error correcting codes.

Experimental study of single-electron phenomena in silicon nanocrystal memories

In this paper we present experimental evidence for single-electron phenomena in solid-state memories based on silicon nanocrystals as storage elements. The stepwise evolution of the channel current of a written memory cell biased in the subthreshold regime is monitored by means of a purposely designed low noise acquisition system with a bandwidth of 1 kHz. Each channel current step-up is ascribed to a single-electron emission from the silicon nanocrystal to the silicon substrate and each current step-down is ascribed to a single-electron capture from the silicon substrate into the silicon nanocrystal. The effect of the measurement system bandwidth on the detection of single-electron events is discussed and a procedure for extracting the threshold voltage shift associated to these events is proposed. It is shown that single-electron charging and discharging events in a memory cell with an area of 4.5 x 10(-10) cm2 can cause threshold voltage shift at room-temperature of the order of several millivolts. Qualitative explanation for the observed threshold voltage shift distribution is given.

Two-dimensional ultrahigh-density X-ray optical memory

Most important aspect of nanotechnology applications in the information ultrahigh storage is the miniaturization of data carrier elements of the storage media with emphasis on the long-term stability. Proposed two-dimensional ultrahigh-density X-ray optical memory, named X-ROM, with long-term stability is an information carrier basically destined for digital data archiving. X-ROM is a semiconductor wafer, in which the high-reflectivity nanosized X-ray mirrors are embedded. Data are encoded due to certain positions of the mirrors. Ultrahigh-density data recording procedure can e.g., be performed via mask-less zone-plate-array lithography (ZPAL), spatial-phase-locked electron-beam lithography (SPLEBL), or focused ion-beam lithography (FIB). X-ROM manufactured by nanolithography technique is a write-once memory useful for terabit-scale memory applications, if the surface area of the smallest recording pits is less than 100 nm2. In this case the X-ROM surface-storage capacity of a square centimetre becomes by two orders of magnitude higher than the volumetric data density really achieved for three-dimensional optical data storage medium. Digital data read-out procedure from proposed X-ROM can e.g., be performed via glancing-angle incident X-ray micro beam (GIX) using the well-developed X-ray reflectometry technique. In presented theoretical paper the crystal-analyser operating like an image magnifier is added to the set-up of X-ROM data handling system for the purpose analogous to case of application the higher numerical aperture objective in optical data read-out system. We also propose the set-up of the X-ROM readout system based on more the one incident X-ray micro beam. Presented scheme of two-beam data handling system, which operates on two mutually perpendicular well-collimated monochromatic incident X-ray micro beams, essentially increases the reliability of the digital information read-out procedure. According the graphs of characteristic functions presented in paper, one may choose optimally the incident radiation wavelength, as well as the angle of incidence of X-ray micro beams, appropriate for proposed digital data read-out procedure.

[Design and implementation of a system for transforming the NEMA 2.0 images into DICOM 3.0 images]

This paper introduces the design and implementation of a system which can get the NEMA2.0 image data from the hard disks of the imaging equipments directly,then analyzes and transforms these image data into the DICOM3.0 image data and sends them to the image server. The design has the advantages of reliable image quality, low cost and information.

Silicon nanocrystal memories: a status update

In the last decade, the silicon nanocrystal memory technology has received widespread interests from the scientific community working in the field of non-volatile solid-state memories, considering it as a feasible candidate for the post-Flash scenario. The immunity to stress-induced leakage current and the reduction of parasitic floating-gate capacitive couplings make the nanocrystal technology very attractive, especially when considering the CMOS compatible process flow. However, many open issues still exist for its development, first of all concerning its scaling perspectives. Starting from the discussion of the basic principles of nanocrystal storage, in this paper we review the major benefits and the open challenges of the silicon nanocrystal memory technology.

Ge quantum dot memory structure with laterally ordered highly dense arrays of Ge dots

This work was devoted to the development of a Ge quantum dot memory structure of a MOSFET type with laterally ordered Ge quantum dots within the gate dielectric stack. Lateral ordering of the Ge dots was achieved by the combination of the following technological steps: (a) use of a focused ion beam (FIB) to create ordered two-dimensional arrays of regular holes on a field oxide on the silicon substrate, (b) chemical cleaning and restoring of the Si surface in the holes, (c) further oxidation to transfer the pattern from the field oxide to the silicon substrate, (d) removal of the field oxide and thermal re-oxidation of the sample in order to create a tunneling oxide of homogeneous thickness on the patterned silicon surface, and (e) self-assembly of the two-dimensional arrays of Ge dots on the patterned tunneling oxide. The charging properties of the obtained memory structure were characterized by electrical measurements. Charging of the Ge quantum dot layer by electrons injected from the substrate resulted in a large shift in the capacitance-voltage curves of the MOS structure. Charges were stored in deep traps in the charging layer, and consequently the erasing process was difficult, resulting in a limited memory window. The advantages of controlled positioning of the quantum dots in the charging layer will be discussed.

Exchange coupling and its applications in magnetic data storage

The continuing scaling of magnetic recording is facing more and more scientific and technological challenges because both the read sensor and recording bit are approaching sub-50 nm regime with the ever increasing areal density in hard disk drives. One of the key and indispensable elements for both high-sensitivity sensors and high-density media is the exchange bias between a ferromagnetic and an antiferromagnetic layer or the exchange coupling between two ferromagnets via a non-magnetic spacer. In the nanometer regime, the exchange coupling between ferromagnet and antiferromagnet or two ferromagnets through a conductive spacer is governed by the intergrain exchange interaction which has its origin in electron spins. Interlayer exchange coupling in multilayer or trilayer essentially originates from the quantum confinement effect. In this paper, we first review the physical origin and various theoretical models of the two types of exchange couplings, followed by a review of the applications of the exchange bias and interlayer exchange coupling in data storage with emphasis on the advanced read sensor and advanced media including perpendicular media and patterned media.

Application of femtosecond-laser induced nanostructures in optical memory

The femtosecond laser induced micro- and nanostructures for the application to the three-dimensional optical data storage are investigated. We have observed the increase of refractive index due to local densification and atomic defect generation, and demonstrated the real time observation of photothermal effect after the femtosecond laser irradiation inside a glass by the transient lens (TrL) method. The TrL signal showed a damped oscillation with about an 800 ps period. The essential feature of the oscillation can be reproduced by the pressure wave creation and propagation to the outward direction from the irradiated region. The simulation based on elastodynamics has shown that a large thermoelastic stress is relaxed by the generation of the pressure wave. In the case of soda-lime glass, the velocity of the pressure wave is almost same as the longitudinal sound velocity at room temperature (5.8 microm/ns). We have also observed the localized photo-reduction of Sm3+ to Sm2+ inside a transparent and colorless Sm(3+)-doped borate glass. Photoluminescence spectra showed that some the Sm3+ ions in the focal spot within the glass sample were reduced to Sm2+ ions after femtosecond laser irradiation. A photo-reduction bit of 200 nm in three-dimensions can be recorded with a femtosecond laser and readout clearly by detecting the fluorescence excited by Ar+ laser (lambda = 488 nm). A photo-reduction bit can be also erased by photo-oxidation with a cw Ar+ laser (lambda = 514.5 nm). Since photo-reduction bits can be spaced 150 nm apart in a layer within glass, a memory capacity of as high as 1 Tbit can be achieved in a glass piece with dimensions of 10 mm x 10 mm x 1 mm. We have also demonstrated the first observation of the polarization-dependent periodic nanostructure formation by the interference between femtosecond laser light and electron acoustic waves. The observed nanostructures are the smallest embedded structures ever created by light. The period of self-organized nanostructures can be controlled from approximately 140 to 320 nm by the pulse energy and the number of irradiated pulses. Furthermore, we have also observed the self-assembled sub-wavelength periodic structures created in silica glass by femtosecond pulses on the plane of the propagation of light.

Two-silicon-nanocrystal layer memory structure with improved retention characteristics

It was demonstrated in the literature that the use of self-aligned doubly-stacked Si dots improves retention characteristics of a nanocrystal memory. In this paper, we show that a similar effect may be obtained by using two distinct layers of silicon nanocrystals within the gate dielectric of the MOS structure, if the nanocrystal density in each layer is high enough (above 10(12) dots/cm2) so as to get an average effect of at least one smaller dot underneath each larger one. The relative distance of the layers and their position from the silicon substrate and the gate metal are critical for optimum memory operation. Two different double-nanocrystal-layer structures were investigated. In the first structure the two nanocrystal layers were close together and they were composed of dots of different size (lower layer: 3 nm, upper layer: 5 nm), while in the second structure the dot layers were composed of dots of equal diameter (d = 3 nm) and their inter-distance was much larger. In both cases, the retention characteristics of the structure were improved compared with a single dot layer structure. In the second case this improvement was significantly larger than in the first case. Extrapolation of the data to ten years memory operation, showed that the charge loss after this time was only approximately 12%.

Tunneling magnetoresistive heads for magnetic data storage

Spintronics is emerging to be a new form of nanotechnologies, which utilizes not only the charge but also spin degree of freedom of electrons. Spin-dependent tunneling transport is one of the many kinds of physical phenomena involving spintronics, which has already found industrial applications. In this paper, we first provide a brief review on the basic physics and materials for magnetic tunnel junctions, followed more importantly by a detailed coverage on the application of magnetic tunneling devices in magnetic data storage. The use of tunneling magnetoresistive reading heads has helped to maintain a fast growth of areal density, which is one of the key advantages of hard disk drives as compared to solid-state memories. This review is focused on the first commercial tunneling magnetoresistive heads in the industry at an areal density of 80 approximately 100 Gbit/in2 for both laptop and desktop Seagate hard disk drive products using longitudinal media. The first generation tunneling magnetoresistive products utilized a bottom stack of tunnel junctions and an abutted hard bias design. The output signal amplitude of these heads was 3 times larger than that of comparable giant magnetoresistive devices, resulting in a 0.6 decade bit error rate gain over the latter. This has enabled high component and drive yields. Due to the improved thermal dissipation of vertical geometry, the tunneling magnetoresistive head runs cooler with a better lifetime performance, and has demonstrated similar electrical-static-discharge robustness as the giant magnetoresistive devices. It has also demonstrated equivalent or better process and wafer yields compared to the latter. The tunneling magnetoresistive heads are proven to be a mature and capable reader technology. Using the same head design in conjunction with perpendicular recording media, an areal density of 274 Gbit/in2 has been demonstrated, and advanced tunneling magnetoresistive heads can reach 311 Gbit/in2. Today, the tunneling magnetoresistive heads have become a mainstream technology for the hard disk industry and will still be a technology of choice for future hard disk products.

Nanophase change for data storage applications

Phase change materials are widely used for date storage. The most widespread and important applications are rewritable optical disc and Phase Change Random Access Memory (PCRAM), which utilizes the light and electric induced phase change respectively. For decades, miniaturization has been the major driving force to increase the density. Now the working unit area of the current data storage media is in the order of nano-scale. On the nano-scale, extreme dimensional and nano-structural constraints and the large proportion of interfaces will cause the deviation of the phase change behavior from that of bulk. Hence an in-depth understanding of nanophase change and the related issues has become more and more important. Nanophase change can be defined as: phase change at the scale within nano range of 100 nm, which is size-dependent, interface-dominated and surrounding materials related. Nanophase change can be classified into two groups, thin film related and structure related. Film thickness and clapping materials are key factors for thin film type, while structure shape, size and surrounding materials are critical parameters for structure type. In this paper, the recent development of nanophase change is reviewed, including crystallization of small element at nano size, thickness dependence of crystallization, effect of clapping layer on the phase change of phase change thin film and so on. The applications of nanophase change technology on data storage is introduced, including optical recording such as super lattice like optical disc, initialization free disc, near field, super-RENS, dual layer, multi level, probe storage, and PCRAM including, superlattice-like structure, side edge structure, and line type structure. Future key research issues of nanophase change are also discussed.

Nonvolatile memory devices with NiSi2/CoSi2 nanocrystals

Metal-oxide-semiconductor structures with NiSi2 and CoSi2 nanocrystals embedded in the SiO2 layer have been fabricated. A pronounced capacitance-voltage hysteresis was observed with a memory window about 1 V under low programming voltage. The retention characteristic can be improved by using HfO2 layer as control oxide. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.

Advanced modeling techniques for micromagnetic systems

We present a review of micromagnetic and magnetotransport modeling methods which go beyond the standard model. We first give a brief overview of the standard micromagnetic model, which for (i) the steady-state (equilibrium) solution is based on the minimization of the free energy functional, and for (ii) the dynamical solution, relies on the numerical solution of the Landau-Lifshitz-Gilbert (LLG) equation. We present three complements to the standard model, i.e., (i) magnetotransport calculations based on ohmic conduction in the presence of the anisotropic magnetoresistance (AMR) effect, (ii) magnetotransport calculations based on spin-dependent tunneling in the presence of single charge tunneling (Coulomb blockade) effect, and (iii) stochastic micromagnetics, which incorporates the effects of thermal fluctuations via a white-noise thermal field in the LLG equation. All three complements are of practical importance: (i) magnetotransport model either in the ohmic or tunneling transport regimes, enables the conversion of the micromagnetic results to the measurable quantity of magnetoresistance ratio, while (ii) stochastic modeling is essential as the dimensions of the micromagnetic system reduces to the deep submicron regime and approaches the superparamagnetic limit.

Nanoscale ferroelectric information storage based on scanning nonlinear dielectric microscopy

An investigation of ultrahigh-density ferroelectric data storage based on scanning nonlinear dielectric microscopy (SNDM) is described. For the purpose of obtaining fundamental knowledge on high-density ferroelectric data storage, several experiments on nanodomain formation in a lithium tantalate (LiTaO3) single crystal were conducted. Through domain engineering, a domain dot array with an areal density of 1.5 Tbit/inch2 was formed on congruent LiTaO3 (CLT). Sub-nanosecond (500 psec) domain switching speed also has been achieved. Next, actual information storage is demonstrated at a density of 1 Tbit/inch2. Finally, it is described that application of a very small dc offset voltage is very effective in accelerating the domain switching speed and in stabilizing the reversed nano-domain dots. Applying this offset application technique, we formed a smallest artificial nano-domain single dot of 5.1 nm in diameter and artificial nano-domain dot-array with a memory density of 10.1 Tbit/inch2 and a bit spacing of 8.0 nm, representing the highest memory density for rewritable data storage reported to date.

MEMS-based probe recording technology

This paper reviews the recent developments in the area of MEMS-based probe recording technology. Various state-of-the-art scanning probe microscope (SPM) based techniques are briefly introduced, followed by the description of system approaches of MEMS-based probe recording technology and the basic MEMS-based actuation mechanism. Subsequently, current research status in developing MEMS-based probe recording technology with emphasis on storage architecture, MEMS access systems, probe recording mechanisms, and media for terabit per square inch recording density, is reviewed. Lastly, potential research topics and prospects for MEMS-based probe recording technology development are discussed.

FePt nanocluster films for high-density magnetic recording

High anisotropy L1(0) ordered FePt thin films are considered to have high potential for use as high areal density recording media, beyond 1 Tera bit/in2. In this paper, we review recent results on the synthesis and magnetic properties of L1(0) FePt nanocomposite films. Several fabrication methods have been developed to produce high-anisotropy FePt films: epitaxial and non-epitaxial growth of (001)-oriented FePt:X (X = Au, Ag, Cu, C, etc.) composite films that might be used for perpendicular media; monodispersed FePt nanocluster-assembled films grown with a gas-aggregation technique and having uniform cluster size and narrow size distribution; self-assembled FePt particles prepared with chemical synthesis by reduction/decomposition techniques, etc. The magnetic properties are controllable through variations in the nanocluster properties and nanostructure. FePt and related films show promise for development as heat-assisted magnetic recording media at extremely high areal densities. The self-assembled FePt arrays show potential for approaching the ultimate goal of single-grain-per-bit patterned media.

Field dependence of switching currents in an exchange biased spin valve

Current induced magnetic reversal due to spin transfer torque is a promising candidate in advanced information storage technology. It has been intensively studied. This work reports the field-dependence of switching-currents for current induced magnetization switching in a uncoupled nano-sized cobalt-based spin valve of exchange biased type. The dependency is investigated in hysteretic regime at room temperature, in comparison with that of a trilayer simple spin valve. In the simple spin valve, the switching currents behave to the positive and the negative applied magnetic field symmetrically. In the exchange biased type, in contrast, the switching currents respond to the negative field in a quite unusual and different manner than to the positive field. A negative magnetic field then can shift the switching-currents into either negative or positive current range, dependently on whether a parallel or an antiparallel state of the spin valve was produced by that field. This different character of switching currents in the negative field range can be explained by the effect of the exchange bias pinning field on the spin-polarizer (the fixed Co layer) of the exchange biased spin valve. That unidirectional pinning filed could suppress the thermal magnetization fluctuation in the spin-polarizer, leading to a higher spin polarization of the current, and hence a lower switching current density than in the simple spin valve.

Cancer incidence among semiconductor and electronic storage device workers

AIMS

To evaluate cancer incidence among workers at two facilities in the USA that made semiconductors and electronic storage devices.

METHODS

89 054 men and women employed by International Business Machines (IBM) were included in the study. We compared employees' incidence rates with general population rates and examined incidence patterns by facility, duration of employment, time since first employment, manufacturing era, potential for exposure to workplace environments other than offices and work activity.

RESULTS

For employees at the semiconductor manufacturing facility, the standardised incidence ratio (SIR) for all cancers combined was 81 (1541 observed cases, 95% confidence interval (CI) 77 to 85) and for those at the storage device manufacturing facility the SIR was 87 (1319 observed cases, 95% CI 82 to 92). The subgroups of employees with > or =15 years since hiring and > or =5 years worked had 6-16% fewer total incidents than expected. SIRs were increased for several cancers in certain employee subgroups, but analyses of incidence patterns by potential exposure and by years spent and time since starting in specific work activities did not clearly indicate that the excesses were due to occupational exposure.

CONCLUSIONS

This study did not provide strong or consistent evidence of causal associations with employment factors. Data on employees with long potential induction time and many years worked were limited. Further follow-up will allow a more informative analysis of cancer incidence that might be plausibly related to workplace exposures in the cohort.

On the Mathematical Reconstruction of Two Dimensional Plants

A set of 10, chosen medicinal plants (some of them with a reputation as remedies for tuberculosis) has been investigated through Partitioned Iterated Function Systems-Semi Fractals with Angle (PIFS-SFA) coding, Lempel, Ziv, Welch with quantization and noise (LZW-QN) compression, and surface density statistics (f(α)-SDS) discrimination techniques. The final outcomes of this quantitative analysis were, firstly: the linear ordering of the plants in question accompanied by the hope that it reflects their medical significance, secondly: the mathematical representation of each of the plants, and thirdly: the impressive compression achieved, leading to remarkable computer memory saving, and still permitting successful pattern recognition i.e., proper identification of the plant from the compressed image.

Developing a medical image content repository for e-learning

The integration of medical informatics and e-learning systems could provide many advanced applications including training, knowledge management, telemedicine, etc. Currently, both the domains of e-learning and medical image have sophisticated specifications and standards. It is a great challenge to bring about integration. In this paper, we describe the development of a Web interface for searching and viewing medical images that are stored in standard medical image servers. With the creation of a Web solution, we have reduced the overheads of integration. We have packaged Digital Imaging and Communications in Medicine (DICOM) network services as a component that can be used via a Web server. The Web server constitutes a content repository for searching, editing, and storing Web-based medical image content. This is a simple method by which the use of Picture Archiving and Communication System (PACS) can be extended. We show that the content repository can easily interact and integrate with a learning system. With the integration, the user can easily generate and assign medical image content for e-learning. A Web solution might be the simplest way for system integration. The demonstration in this paper should be useful as a method of expanding the usage of medical information. The construction of a Web-based repository and integrated with a learning system may be also applicable to other domains.

Fast Maximum Intensity Projections of Large Medical Data Sets by Exploiting Hierarchical Memory Architectures

Maximum intensity projections (MIPs) are an important visualization technique for angiographic data sets. Efficient data inspection requires frame rates of at least five frames per second at preserved image quality. Despite the advances in computer technology, this task remains a challenge. On the one hand, the sizes of computed tomography and magnetic resonance images are increasing rapidly. On the other hand, rendering algorithms do not automatically benefit from the advances in processor technology, especially for large data sets. This is due to the faster evolving processing power and the slower evolving memory access speed, which is bridged by hierarchical cache memory architectures. In this paper, we investigate memory access optimization methods and use them for generating MIPs on general-purpose central processing units (CPUs) and graphics processing units (GPUs), respectively. These methods can work on any level of the memory hierarchy, and we show that properly combined methods can optimize memory access on multiple levels of the hierarchy at the same time. We present performance measurements to compare different algorithm variants and illustrate the influence of the respective techniques. On current hardware, the efficient handling of the memory hierarchy for CPUs improves the rendering performance by a factor of 3 to 4. On GPUs, we observed that the effect is even larger, especially for large data sets. The methods can easily be adjusted to different hardware specifics, although their impact can vary considerably. They can also be used for other rendering techniques than MIPs, and their use for more general image processing task could be investigated in the future.