Sequential Deposition of Multicomponent Bulk Heterojunctions Increases Efficiency of Organic Solar Cells

Influence of Traps and Lorentz Force on Charge Transport in Organic Semiconductors

Charge transport characteristics in organic semiconductor devices become altered in the presence of traps due to defects or impurities in the semiconductors. These traps can lead to a decrease in charge carrier mobility and an increase in recombination rates, thereby ultimately affecting the overall performance of the device. It is therefore important to understand and mitigate the impact of traps on organic semiconductor devices. In this contribution, the influence of the capture and release times of trap states, recombination rates, and the Lorentz force on the net charge of a low-mobility organic semiconductor was determined using the finite element method (FEM) and Hall effect method through numerical simulations. The findings suggest that increasing magnetic fields had a lesser impact on net charge at constant capture and release times of trap states. On the other hand, by increasing the capture time of trap states at a constant magnetic field and fixed release time, the net charge extracted from the semiconductor device increased with increasing capture time. Moreover, the net charge extracted from the semiconductor device was nearly four and eight times greater in the case of the non-Langevin recombination rates of 0.01 and 0.001, respectively, when compared to the Langevin rate. These results imply that the non-Langevin recombination rate can significantly enhance the performance of semiconductor devices, particularly in applications that require efficient charge extraction. These findings pave the way for the development of more efficient and cost-effective electronic devices with improved charge transport properties and higher power conversion efficiencies, thus further opening up new avenues for research and innovation in this area of modern semiconductor technology.

Benzo[d]thiazole Based Wide Bandgap Donor Polymers Enable 19.54% Efficiency Organic Solar Cells Along with Desirable Batch-to-Batch Reproducibility and General Applicability

The limited selection pool of high-performance wide bandgap (WBG) polymer donors is a bottleneck problem of the nonfullerene acceptor (NFA) based organic solar cells (OSCs) that impedes the further improvement of their photovoltaic performances. Herein, a series of new WBG polymers, namely PH-BTz, PS-BTz, PF-BTz, and PCl-BTz, are developed by using the bicyclic difluoro-benzo[d]thiazole (BTz) as the acceptor block and benzo[1,2-b:4,5-b']dithiophene (BDT) derivatives as the donor units. By introducing S, F, and Cl atoms to the alkylthienyl sidechains on BDT, the resulting polymers exhibit lowered energy levels and enhanced aggregation properties. The fluorinated PBTz-F not only exhibits a low-lying HOMO level, but also has stronger face-on packing order and results in more uniform fibril-like interpenetrating networks in the related PF-BTz:L8-BO blend. A high-power conversion efficiency (PCE) of 18.57% is achieved. Moreover, PBTz-F also exhibits a good batch-to-batch reproducibility and general applicability. In addition, ternary blend OSCs based on the host PBTz-F:L8-BO blend and PM6 guest donor exhibits a further enhanced PCE of 19.54%, which is among the highest values of OSCs.

BN-Bond-Embedded Triplet Terpolymers with Small Singlet-Triplet Energy Gaps for Suppressing Non-Radiative Recombination and Improving Blend Morphology in Organic Solar Cells

Suppressing the photon energy loss (E_loss ), especially the non-radiative loss, is of importance to further improve the device performance of organic solar cells (OSCs). However, typical π-conjugated semiconductors possess a large singlet-triplet energy gap (ΔE_ST ), leading to a lower triplet state than charge transfer state and contributing to a non-radiative loss channel of the photocurrent by the triplet state. Herein, a series of triplet polymer donors are developed by introducing a BNIDT block into the PM6 polymer backbone. The high electron affinity of BNIDT and the opposite resonance effect of the BN bond in BNIDT results in a lowered highest occupied molecular orbital (HOMO) and a largely reduced ΔE_ST . Moreover, the morphology of the active blends is also optimized by fine-tuning the BNIDT content. Therefore, non-radiative recombination via the terminal triplet loss channels and morphology traps is effectively suppressed. The PNB-3 (with 3% BNIDT):L8-BO device exhibits both small ΔE_ST and optimized morphology, favoring more efficient charge transfer and transport. Finally, the simultaneously enhanced V_oc of 0.907 V, J_sc of 26.59 mA cm^-2 , and FF of 78.86% contribute to a champion PCE of 19.02%. Therefore, introducing BN bonds into benchmark polymers is a possible avenue toward higher-performance of OSCs.