The role of photon recycling in perovskite light-emitting diodes

High-performance quasi-2D perovskite light-emitting diodes: from materials to devices

Quasi-two-dimensional (quasi-2D) perovskites have attracted extraordinary attention due to their superior semiconducting properties and have emerged as one of the most promising materials for next-generation light-emitting diodes (LEDs). The outstanding optical properties originate from their structural characteristics. In particular, the inherent quantum-well structure endows them with a large exciton binding energy due to the strong dielectric- and quantum-confinement effects; the corresponding energy transfer among different n-value species thus results in high photoluminescence quantum yields (PLQYs), particularly at low excitation intensities. The review herein presents an overview of the inherent properties of quasi-2D perovskite materials, the corresponding energy transfer and spectral tunability methodologies for thin films, as well as their application in high-performance LEDs. We then summarize the challenges and potential research directions towards developing high-performance and stable quasi-2D PeLEDs. The review thus provides a systematic and timely summary for the community to deepen the understanding of quasi-2D perovskite materials and resulting LED devices.

Ligand-engineered bandgap stability in mixed-halide perovskite LEDs

Lead halide perovskites are promising semiconductors for light-emitting applications because they exhibit bright, bandgap-tunable luminescence with high colour purity^1,2. Photoluminescence quantum yields close to unity have been achieved for perovskite nanocrystals across a broad range of emission colours, and light-emitting diodes with external quantum efficiencies exceeding 20 per cent-approaching those of commercial organic light-emitting diodes-have been demonstrated in both the infrared and the green emission channels^1,3,4. However, owing to the formation of lower-bandgap iodide-rich domains, efficient and colour-stable red electroluminescence from mixed-halide perovskites has not yet been realized^5,6. Here we report the treatment of mixed-halide perovskite nanocrystals with multidentate ligands to suppress halide segregation under electroluminescent operation. We demonstrate colour-stable, red emission centred at 620 nanometres, with an electroluminescence external quantum efficiency of 20.3 per cent. We show that a key function of the ligand treatment is to 'clean' the nanocrystal surface through the removal of lead atoms. Density functional theory calculations reveal that the binding between the ligands and the nanocrystal surface suppresses the formation of iodine Frenkel defects, which in turn inhibits halide segregation. Our work exemplifies how the functionality of metal halide perovskites is extremely sensitive to the nature of the (nano)crystalline surface and presents a route through which to control the formation and migration of surface defects. This is critical to achieve bandgap stability for light emission and could also have a broader impact on other optoelectronic applications-such as photovoltaics-for which bandgap stability is required.

Computational Study of Dipole Radiation in Re-Absorbing Perovskite Semiconductors for Optoelectronics

Compared to organic emitters, perovskite materials generally have a small Stokes shift and correspondingly large re-absorption of dipole emission. Classical optical modelling methods ignoring re-absorption do not provide an adequate description of the observed light emission properties. Here, optical modelling methods and design rules for perovskite light-emitting diodes are presented. The transfer-matrix formalism is used to quantify the Poynting vectors generated by a dipole radiating inside a perovskite optoelectronic device. A strategy is presented to deal with non-radiative coupling to nearby emissive material that can otherwise lead to non-physical divergence in the calculation. Stability issues are also investigated regarding coherence of the light propagating in the substrate and the absence of a light absorber in the system. The benefit of the photon recycling effect is taken into account by recursive calculation of the dipole generation profile. The simulation results predict that a high external quantum efficiency of ≈40% is achievable in formamidinium lead triiodide-based perovskite light-emitting diodes, by optimization of microcavity, dipole orientation, and photon recycling effects. Contrary to conventional device structures currently reported, this work highlights the benefits of thick charge transport layers and thick perovskite with small Stokes shift.

Microscopic (Dis)order and Dynamics of Cations in Mixed FA/MA Lead Halide Perovskites

Recent developments in the field of high efficiency perovskite solar cells are based on stabilization of the perovskite crystal structure of FAPbI₃ while preserving its excellent optoelectronic properties. Compositional engineering of, for example, MA or Br mixed into FAPbI₃ results in the desired effects, but detailed knowledge of local structural features, such as local (dis)order or cation interactions of formamidinium (FA) and methylammonium (MA), is still limited. This knowledge is, however, crucial for their further development. Here, we shed light on the microscopic distribution of MA and FA in mixed perovskites MA_1-x FA _x PbI₃ and MA_0.15FA_0.85PbI_2.55Br_0.45 by combining high-resolution double-quantum ¹H solid-state nuclear magnetic resonance (NMR) spectroscopy with state-of-the-art near-first-principles accuracy molecular dynamics (MD) simulations using machine-learning force-fields (MLFFs). We show that on a small local scale, partial MA and FA clustering takes place over the whole MA/FA compositional range. A reasonable driving force for the clustering might be an increase of the dynamical freedom of FA cations in FA-rich regions. While MA_0.15FA_0.85PbI_2.55Br_0.45 displays similar MA and FA ordering as the MA_1-x FA _x PbI₃ systems, the average cation-cation interaction strength increased significantly in this double mixed material, indicating a restriction of the space accessible to the cations or their partial immobilization upon Br^- incorporation. Our results shed light on the heterogeneities in cation composition of mixed halide perovskites, helping to exploit their full optoelectronic potential.

Origins of the long-range exciton diffusion in perovskite nanocrystal films: photon recycling vs exciton hopping

The outstanding optoelectronic performance of lead halide perovskites lies in their exceptional carrier diffusion properties. As the perovskite material dimensionality is reduced to exploit the quantum confinement effects, the disruption to the perovskite lattice, often with insulating organic ligands, raises new questions on the charge diffusion properties. Herein, we report direct imaging of >1 μm exciton diffusion lengths in CH₃NH₃PbBr₃ perovskite nanocrystal (PNC) films. Surprisingly, the resulting exciton mobilities in these PNC films can reach 10 ± 2 cm² V^-1 s^-1, which is counterintuitively several times higher than the carrier mobility in 3D perovskite films. We show that this ultralong exciton diffusion originates from both efficient inter-NC exciton hopping (via Förster energy transfer) and the photon recycling process with a smaller yet significant contribution. Importantly, our study not only sheds new light on the highly debated origins of the excellent exciton diffusion in PNC films but also highlights the potential of PNCs for optoelectronic applications.

Emerging Light-Emitting Materials for Photonic Integration

The arrival of the information explosion era is urging the development of large-bandwidth high-data-rate optical interconnection technology. Up to now, the biggest stumbling block in optical interconnections has been the lack of efficient light sources despite significant progress that has been made in germanium-on-silicon (Ge-on-Si) and III-V-on-silicon (III-V-on-Si) lasers. 2D materials and metal halide perovskites have attracted much attention in recent years, and exhibit distinctive advantages in the application of on-chip light emitters. Herein, this Progress Report reviews the recent progress made in light-emitting materials with a focus on new materials, i.e., 2D materials and metal halide perovskites. The report briefly introduces the current status of Ge-on-Si and III-V-on-Si lasers and discusses the advances of 2D and perovskite light-emitting materials for photonic integration, including their optical properties, preparation methods, as well as the light sources based on these materials. Finally, challenges and perspectives of these emerging materials on the way to the efficient light sources are discussed.

Phase Modulation by Vacuum Poling toward Enhanced Performance of Quasi-Two-Dimensional Bromide Perovskite-Based Light-Emitting Diodes

As a new kind of highly efficient luminescent materials, quasi-two-dimensional (quasi-2D) perovskites show great potential in industrial display applications. In this work, the poling methods are used in modulating the phase arrangement in quasi-2D perovskite light-emitting diodes (PeLEDs). We find the effective modulation of different phase components in uniform arrangement can enhance both brightness and current efficiency to 30 810 cd/m² and 8.3 cd/A, about 2 times in comparison to results for the control devices. Upon further investigation by optical and impedance spectroscopy, we find the phase modulation can improve the balance of charge carrier injection without sacrificing the transport ability. We believe our studies can provide new inspiration on the influence of phase arrangement in PeLED devices.

Quantifying Photon Recycling in Solar Cells and Light-Emitting Diodes: Absorption and Emission Are Always Key

Photon recycling has received increased attention in recent years following its observation in halide perovskites. It has been shown to lower the effective bimolecular recombination rate and thus increase excitation densities within a material. Here we introduce a general framework to quantify photon recycling which can be applied to any material. We apply our model to idealized solar cells and light-emitting diodes based on halide perovskites. By varying controllable parameters which affect photon recycling, namely, thickness, charge trapping rate, nonideal transmission at interfaces, and absorptance, we quantify the effect of each on photon recycling. In both device types, we demonstrate that maximizing absorption and emission processes remains paramount for optimizing devices, even if this is at the expense of photon recycling. Our results provide new insight into quantifying photon recycling in optoelectronic devices and demonstrate that photon recycling cannot always be seen as a beneficial process.

Controlling and Optimizing Amplified Spontaneous Emission in Perovskites

Perovskites are currently attracting extensive research interest as a wavelength-tunable lasing material. As a first step toward electrically pumped lasers, numerous investigations have recently reported amplified spontaneous emission (ASE) of optically pumped perovskites with remarkably low thresholds. Here, we investigate the optical aspects of perovskite ASE, to establish the design principle of materials and devices. We show that compared to solution-processed CsPbBr₃, vacuum deposition yields superior ASE characteristics with a threshold of 35 μJ/cm². The optical loss (R_loss) during lateral photon propagation in the waveguide mode is identified as a key parameter to determine the ASE quality. With spatially resolved photoluminescence, we determine R_loss as 40 and >1000 cm^-1 for vacuum and solution-processed perovskites, respectively. We present a comprehensive model that relates ASE, gain length, optical loss, temperature, and density of states. Finally, we succeed in demonstrating ASE in perovskite samples with metal electrodes, mimicking a diode architecture for electrical pumping. Optical spacer layers are shown to play a crucial role in preventing metal absorption loss in waveguide modes.

Surface-Plasmon-Enhanced Perovskite Light-Emitting Diodes

Perovskite light-emitting diodes (PeLEDs) have attracted considerable attention because of their potential in display and lighting applications. To promote commercialization of PeLEDs, it is important to improve the external quantum efficiency of the devices, which depends on their internal quantum efficiency (IQE) and light extraction efficiency. Optical simulations have revealed that 20-50% of the light generated in the device will be lost to surface plasmon (SP) modes formed in the metal/dielectric interfaces. Therefore, extracting the optical energy in SP modes to the air will greatly increase the light extraction efficiency of PeLEDs. In addition, the SPs can accelerate radiative recombination of the emitter via near-field effects. Thus, the IQE of a PeLED can also be enhanced by SP manipulation. In this review, first, general concepts of the SPs and how they can enhance the efficiency of LEDs are introduced. Then recent progresses in SP-enhanced emission of perovskite films and LEDs are systematically reviewed. After that, the challenges and opportunities of the SP-enhanced PeLEDs are shown, followed by an outlook of further development of the SPs in perovskite optoelectronic devices.