Magnetic properties and diffusion of adatoms on a graphene sheet

Strain engineering of graphene: a review

Graphene has intrigued the science community by many unique properties not found in conventional materials. In particular, it is the strongest two-dimensional material ever measured, being able to sustain reversible tensile elastic strain larger than 20%, which yields an interesting possibility to tune the properties of graphene by strain and thus opens a new field called "straintronics". In this article, the current progress in the strain engineering of graphene is reviewed. We first summarize the strain effects on the electronic structure and Raman spectra of graphene. We then highlight the electron-phonon coupling greatly enhanced by the biaxial strain and the strong pseudomagnetic field induced by the non-uniform strain with specific distribution. Finally, the potential application of strain-engineering in the self-assembly of foreign atoms on the graphene surface is also discussed. Given the short history of graphene straintronics research, the current progress has been notable, and many further advances in this field are expected.

Substitutional 4d and 5d impurities in graphene

We describe the structural and electronic properties of graphene doped with substitutional impurities of 4d and 5d transition metals.

Tuning the electronic structures and magnetism of two-dimensional porous C2N via transition metal embedding

Based on first-principles calculations, the electronic structures and magnetism are investigated in 3d transition metal (TM)-embedded porous two-dimensional (2D) C₂N monolayers.

Defect Control and n-Doping of Encapsulated Graphene by Helium-Ion-Beam Irradiation

We study with Raman spectroscopy the influences of He(+) bombardment and the environment on beam-induced defects in graphene encapsulated in hexagonal boron nitride (h-BN). We show for the first time experimentally the autonomous behavior of the D' defect Raman peak: in contrast to the D defect peak, the D' defect peak is sensitive to the local environment. In particular, it saturates with ion dose in the encapsulated graphene. Electrical measurements reveal n-type conduction in the BN-encapsulated graphene. We conclude that unbound atoms ("interfacials") between the sp(2)-layers of graphene and h-BN promote self-healing of the beam-induced lattice damage and that nitrogen-carbon exchange leads to n-doping of graphene.

Stable local moments of vacancies, substitutional and hollow site impurities in graphene

The two-sublattice nature of graphene lattice in conjunction with three-fold rotational symmetry, allows for the p-wave hybridization of the impurity state with the Bloch states of carbon atoms. Such an opportunity is not available in normal metals where the wave function is scalar. The p-wave hybridization function V(→k) appears when dealing with vacancies, substitutional adatoms and the hollow site impurities while the s-wave mixing on graphene lattice pertains only to the top site impurities. In this work, we compare the local moment formation in these two cases and find that the local moments formed by p-wave mixing compared to the s-wave one are robust against the changes in the parameters of the model. Furthermore, we investigate the stability of the local moments in the above cases. We find that the quantum fluctuations can destroy the local moments in the case of s-wave hybridization, while the local moments formed by p-wave hybridization survive the quantum fluctuations. Based on these findings, we propose vacancies, substitutional adatoms, and hollow site adatoms as possible candidates to produce stable local moments in graphene.

Robust magnetic moments on the basal plane of the graphene sheet effectively induced by OH groups

Inducing robust magnetic moments on the basal plane of the graphene sheet is very difficult, and is one of the greatest challenges in the study of physical chemistry of graphene materials. Theoretical studies predicted that introduction of a kind of sp(3)-type defects formed by OH groups is an effective pathway to achieve this goal [Boukhvalov, D. W. &Katsnelson, M. I. ACS Nano 5, 2440-2446 (2011)]. Here we demonstrate that OH groups can efficiently induce robust magnetic moments on the basal plane of the graphene sheet. We show that the inducing efficiency can reach as high as 217 μB per 1000 OH groups. More interestingly, the magnetic moments are robust and can survive even at 900°C. Our findings highlight the importance of OH group as an effective sp(3)-type candidate for inducing robust magnetic moments on the basal plane of the graphene sheet.

Implantation and atomic-scale investigation of self-interstitials in graphene

Crystallographic defects play a key role in determining the properties of crystalline materials. The new class of two-dimensional materials, foremost graphene, have enabled atomically resolved studies of defects, such as vacancies,1-4 grain boundaries,(5-7) dislocations,(8,9) and foreign atom substitutions.(10-14) However, atomic resolution imaging of implanted self-interstitials has so far been reported neither in any three-dimensional nor in any two-dimensional material. Here, we deposit extra carbon into single-layer graphene at soft landing energies of ∼ 1 eV using a standard carbon coater. We identify all the self-interstitial dimer structures theoretically predicted earlier,(15-17) employing 80 kV aberration-corrected high-resolution transmission electron microscopy. We demonstrate accumulation of the interstitials into larger aggregates and dislocation dipoles, which we predict to have strong local curvature by atomistic modeling, and to be energetically favorable configurations as compared to isolated interstitial dimers. Our results contribute to the basic knowledge on crystallographic defects and lay out a pathway into engineering the properties of graphene by pushing the crystal into a state of metastable supersaturation.

Exotic carbon nanostructures obtained through controllable defect engineering

Molecular dynamics simulations demonstrate that graphene nanoribbons with a spatially designed defect distribution can spontaneously form a large variety of stable 3D nanostructures, of controllable size and shape, on demand.

Size and edge roughness dependence of thermal conductivity for vacancy-defective graphene ribbons

By incorporating the phonon–phonon scattering, phonon-boundary scattering and phonon-vacancy scattering into the linearized Boltzmann transport equation, we theoretically investigate the effects of size and edge roughness on thermal conductivity of single vacancy-defective graphene ribbons.

Electron confinement induced by diluted hydrogen-like ad-atoms in graphene ribbons

We report the electronic properties of two-dimensional systems, which are patterned with ad-atoms in two separated regions. By applying band-folding procedures we are able to predict the energies and the spatial distribution of those impurity-induced states.

Energetics of atomic scale structure changes in graphene

An overview of theoretical and experimental studies concerned with energetics of atomic scale structure changes in graphene, including thermally activated and electron irradiation-induced processes.

Detailed formation processes of stable dislocations in graphene

We use time-dependent HRTEM to reveal that stable dislocation pairs in graphene are formed from an initial complex multi-vacancy cluster that undergoes multiple bond rotations and adatom incorporation. In the process, it is found that the transformation from the formed complex multi-vacancy cluster can proceed without the increase of vacancy because many atoms and dimers are not only evaporated but also actively adsorbed. In tight-binding molecular dynamics simulations, it is confirmed that adatoms play an important role in the reconstruction of non-hexagonal rings into hexagonal rings. From density functional theory calculations, it is also found from simulations that there is a favorable distance between two dislocations pointing away from each other (i.e. formed from atom loss). For dislocation pairs pointing away from each other, the hillock-basin structure is more stable than the hillock-hillock structure for dislocation pairs pointing away from each other (i.e. formed from atom loss).

Characterizing the chiral index of a single-walled carbon nanotube

The properties of single-walled carbon nanotubes (SWCNTs) mainly depend on their geometry. However, there are still formidable difficulties to determine the chirality of SWCNTs accurately. In this review, some efficient methods to characterize the chiral indices of SWCNTs are illuminated. These methods are divided into imaging techniques and spectroscopy techniques. With these methods, diameter, helix angle, and energy states can be measured. Generally speaking, imaging techniques have a higher accuracy and universality, but are time-consuming with regard to the sample preparation and characterization. The spectroscopy techniques are very simple and fast in operation, but these techniques can be applied only to the particular structure of the sample. Here, the principles and operations of each method are introduced, and a comprehensive understanding of each technique, including their advantages and disadvantages, is given. Advanced applications of some methods are also discussed. The aim of this review is to help readers to choose methods with the appropriate accuracy and time complexity and, furthermore, to put forward an idea to find new methods for chirality characterization.

Ultra-flexibility and unusual electronic, magnetic and chemical properties of waved graphenes and nanoribbons

Two-dimensional materials have attracted increasing attention because of their particular properties and potential applications in next-generation nanodevices. In this work, we investigate the physical and chemical properties of waved graphenes/nanoribbons based on first-principles calculations. We show that waved graphenes are compressible up to a strain of 50% and ultra-flexible because of the vanishing in-plane stiffness. The conductivity of waved graphenes is reduced due to charge decoupling under high compression. Our analysis of pyramidalization angles predicts that the chemistry of waved graphenes can be easily controlled by modulating local curvatures. We further demonstrate that band gaps of armchair waved graphene nanoribbons decrease with the increase of compression if they are asymmetrical in geometry, while increase if symmetrical. For waved zigzag nanoribbons, their anti-ferromagnetic states are strongly enhanced by increasing compression. The versatile functions of waved graphenes enable their applications in multi-functional nanodevices and sensors.

Realization of ferromagnetic graphene oxide with high magnetization by doping graphene oxide with nitrogen

The long spin diffusion length makes graphene very attractive for novel spintronic devices, and thus has triggered a quest for integrating the charge and spin degrees of freedom. However, ideal graphene is intrinsic non-magnetic, due to a delocalized π bonding network. Therefore, synthesis of ferromagnetic graphene or its derivatives with high magnetization is urgent due to both fundamental and technological importance. Here we report that N-doping can be an effective route to obtain a very high magnetization of ca. 1.66 emu/g, and can make graphene oxide (GO) to be ferromagnetism with a Curie-temperature of 100.2 K. Clearly, our findings can offer the easy realization of ferromagnetic GO with high magnetization, therefore, push the way for potential applications in spintronic devices.

Intrinsic magnetism of grain boundaries in two-dimensional metal dichalcogenides

Grain boundaries (GBs) are structural imperfections that typically degrade the performance of materials. Here we show that dislocations and GBs in two-dimensional (2D) metal dichalcogenides MX2 (M = Mo, W; X = S, Se) can actually improve the material by giving it a qualitatively new physical property: magnetism. The dislocations studied all display a substantial magnetic moment of ∼1 Bohr magneton. In contrast, dislocations in other well-studied 2D materials are typically nonmagnetic. GBs composed of pentagon-heptagon pairs interact ferromagnetically and transition from semiconductor to half-metal or metal as a function of tilt angle and/or doping level. When the tilt angle exceeds 47°, the structural energetics favor square-octagon pairs and the GB becomes an antiferromagnetic semiconductor. These exceptional magnetic properties arise from interplay of dislocation-induced localized states, doping, and locally unbalanced stoichiometry. Purposeful engineering of topological GBs may be able to convert MX2 into a promising 2D magnetic semiconductor.

Structures, mobilities, electronic and magnetic properties of point defects in silicene

In the fabrication and processing of silicene monolayers, structural defects are almost inevitable. Using ab initio calculations, we systemically investigated the structures, formation energies, migration behaviors and electronic/magnetic properties of typical point defects in silicene, including the Stone-Wales (SW) defect, single and double vacancies (SVs and DVs), and adatoms. We found that SW can be effectively recovered by thermal annealing. SVs have much higher mobility than DVs and two SVs are very likely to coalesce into one DV to lower the energy. Existence of SW and DVs may induce small gaps in silicene, while the SV defect may transform semimetallic silicene into metallic. Adatoms are unexpectedly stable and can affect the electronic properties of silicene dramatically. Especially, Si adatoms as self-dopants in silicene sheets can induce long-range spin polarization as well as a remarkable band gap, thus achieving an all-silicon magnetic semiconductor. The present theoretical results provide valuable insights into identification of these defects in experiments and understanding their effects on the physical properties of silicene.

Interface-induced room-temperature ferromagnetism in hydrogenated epitaxial graphene

We show ferromagnetic properties of hydrogen-functionalized epitaxial graphene on SiC. Ferromagnetism in such a material is not directly evident as it is inherently composed of only nonmagnetic constituents. Our results nevertheless show strong ferromagnetism with a saturation of 0.9μ(B)/hexagon projected area, which cannot be explained by simple magnetic impurities. The ferromagnetism is unique to hydrogenated epitaxial graphene on SiC, where interactions with the interfacial buffer layer play a crucial role. We argue that the origin of the observed ferromagnetism is governed by electron correlation effects of the narrow Si dangling bond states in the buffer layer exchange coupled to localized states in the hydrogenated graphene layer. This forms a quasi-three-dimensional ferromagnet with a Curie temperature higher than 300 K.

The role of reduced graphene oxide capping on defect induced ferromagnetism of ZnO nanorods

In this study, the effect of different numbers of layers of reduced graphene oxide (RGO) on the ferromagnetic behavior of zinc oxide-reduced graphene oxide (ZnO-RGO) hybrid architectures has been investigated. Scanning and transmission electron microscopy along with x-ray diffraction of these hybrids confirm that ZnO nanorods are wrapped with different numbers of layers of RGO in a controlled way and their hexagonal phase is unaffected by these layers. Raman and photoelectron spectroscopy of these hybrids reveals that RGO does not alter the nonpolar optical phonon E(2) (high) mode and chemical state of Zn(2+) in ZnO. Electron paramagnetic resonance (EPR) spectra show that RGO passivates singly charged oxygen vacancies (VOS⁺) in ZnO. It correlates the passivation efficiency of VOS⁺ to the number of RGO layers and this has been achieved up to 90% by ∼31 layers of RGO. Due to passivation of VOS⁺ in ZnO by RGO, the ferromagnetic behavior (saturation magnetization and divergence between zero field cooled and field cooled) in ZnO-RGO hybrids is suppressed as compared to ZnO. Combining the EPR and magnetic behavior, a direct link between the passivation of the singly charged oxygen vacancies present on the surface of ZnO nanorods and the number of RGO layers is established.

g-B3N3C: a novel two-dimensional graphite-like material

: A novel crystalline structure of hybrid monolayer hexagonal boron nitride (BN) and graphene is predicted by means of the first-principles calculations. This material can be derived via boron or nitrogen atoms which are substituted by carbon atoms evenly in the graphitic BN with vacancies. The corresponding structure is constructed from a BN hexagonal ring linking an additional carbon atom. The unit cell is composed of seven atoms, three of which are boron atoms, three are nitrogen atoms, and one is a carbon atom. It shows a similar space structure as graphene, which is thus coined as g-B3N3C. Two stable topological types associated with the carbon bond formation, i.e., C-N or C-B bonds, are identified. Interestingly, distinct ground states of each type, depending on C-N or C-B bonds, and electronic bandgap as well as magnetic properties within this material have been studied systematically. Our work demonstrates a practical and efficient access to electronic properties of two-dimensional nanostructures, providing an approach to tackling open fundamental questions in bandgap-engineered devices and spintronics.

Two-dimensional organometallic porous sheets with possible high-temperature ferromagnetism

With the rapid development of modern nanotechnology, molecular self-assembly has become an important method to fabricate new functional devices, and to provide an arena for theoretical material designs. In this paper, we propose that freestanding two-dimensional organometallic porous sheets (PSs), which can be formed by molecular self-assembly on metal surfaces, are ideal low-dimensional magnetic materials with room-temperature ferromagnetism. Through comprehensive first-principles calculations, we show that the freestanding organometallic sheets, which are assembled by transition metals (TMs) (Mn and V) and benzene molecules, favor ferromagnetic coupling with strong exchange interactions. More importantly, we predict that the Curie-temperature of V-PS is close to room temperature using a simplified mean-field expression, compared to any organometallic sheets discovered previously. In terms of the recent progress in the molecular self-assembly approach, our results indicate great potential for building room-temperature magnetic organometallic sheets with small magnetic molecules.

Room temperature ferromagnetism in Teflon due to carbon dangling bonds

The ferromagnetism in many carbon nanostructures is attributed to carbon dangling bonds or vacancies. This provides opportunities to develop new functional materials, such as molecular and polymeric ferromagnets and organic spintronic materials, without magnetic elements (for example, 3d and 4f metals). Here we report the observation of room temperature ferromagnetism in Teflon tape (polytetrafluoroethylene) subjected to simple mechanical stretching, cutting or heating. First-principles calculations indicate that the room temperature ferromagnetism originates from carbon dangling bonds and strong ferromagnetic coupling between them. Room temperature ferromagnetism has also been successfully realized in another polymer, polyethylene, through cutting and stretching. Our findings suggest that ferromagnetism due to networks of carbon dangling bonds can arise in polymers and carbon-based molecular materials.

Organometallic complexes of graphene: toward atomic spintronics using a graphene web

Graphene|metal|ligand systems open a new realm in surface magnetochemistry. We show that by trapping metal atoms in the two-dimensional potential lattice of a graphene-ligand interface it is possible to build a chemical analogue of an optical lattice, a key setup in quantum information and strongly correlated systems. Employing sophisticated first-principles calculations, we studied electronic and dynamic properties of graphene|metal|ligand assemblies and showed that there is a general principle--spin-charge separation in π-d systems--that underlies the possibility of synthesizing and controlling such systems. We find that ligands can work as a local gate to control the properties of trapped metal atoms and can impose bosonic or fermionic character on such atomic nets, depending on the ligand's nature. Remarkably, the magnetization energy in such systems reaches record-high values of ca. 400 meV, which makes the respective magnetic phenomena utilizable at room temperature. Accompanied by spin polarization of the graphene π-conjugated system it leads to spin-valve materials and brings the realization of quantum computing one step closer.

Motion of light adatoms and molecules on the surface of few-layer graphene

Low-voltage aberration-corrected transmission electron microscopy (TEM) is applied to investigate the feasibility of continuous electron beam cleaning of graphene and monitor the removal of residual species as present on few-layer graphene (FLG) surfaces. This combined approach allows us to detect light adatoms and evaluate their discontinuous sporadic motional behavior. Furthermore, the formation and dynamic behavior of isolated molecules on the FLG surface can be captured. The preferential source of adatoms and adsorbed molecules appeared to be carbonaceous clusters accumulated from residual solvents on the graphene surface. TEM image simulations provide potential detail on the observed molecular structures. Molecular dynamics simulations confirm the experimentally observed dynamics occurring on the energy scale imposed by the presence of the 80 kV electron beam and help elucidate the underlying mechanisms.

Graphene: Piecing it together

Graphene has a multitude of striking properties that make it an exceedingly attractive material for various applications, many of which will emerge over the next decade. However, one of the most promising applications lie in exploiting its peculiar electronic properties which are governed by its electrons obeying a linear dispersion relation. This leads to the observation of half integer quantum hall effect and the absence of localization. The latter is attractive for graphene-based field effect transistors. However, if graphene is to be the material for future electronics, then significant hurdles need to be surmounted, namely, it needs to be mass produced in an economically viable manner and be of high crystalline quality with no or virtually no defects or grains boundaries. Moreover, it will need to be processable with atomic precision. Hence, the future of graphene as a material for electronic based devices will depend heavily on our ability to piece graphene together as a single crystal and define its edges with atomic precision. In this progress report, the properties of graphene that make it so attractive as a material for electronics is introduced to the reader. The focus then centers on current synthesis strategies for graphene and their weaknesses in terms of electronics applications are highlighted.

Strain-induced magnetic transitions in half-fluorinated single layers of BN, GaN and graphene

Recently, extensive experimental and theoretical studies on single layers of BN, GaN and graphene have stimulated enormous interest in exploring the properties of these sheets by decorating their surfaces. In the present work we discuss half-fluorinated single layers of BN, GaN and graphene, in the context of intercoupling between strain and magnetic property. First-principles calculations reveal that the energy difference between ferromagnetic and antiferromagnetic couplings increases significantly with strain increasing for half-fluorinated BN, GaN and graphene sheets. More surprisingly, the half-fluorinated BN and GaN sheets exhibit intriguing magnetic transitions between ferromagnetism and antiferromagnetism by applying strain, even giving rise to half-metal when the sheets are under compression of 6%. It is found that the magnetic coupling as well as the strain-dependent magnetic transition behavior arise from the combined effects of both through-bond and p-p direct interactions. Our work offers a new avenue to facilitate the design of controllable and tunable spin devices.

sp-Electron magnetic clusters with a large spin in graphene

Motivated by recent experimental data (Sepioni, M.; et al. Phys. Rev. Lett. 2010, 105, 207-205), we have studied the possibility of forming magnetic clusters with spin S > (1)/(2) on graphene by adsorption of hydrogen atoms or hydroxyl groups. Migration of hydrogen atoms and hydroxyl groups on the surface of graphene during the delamination of HOPG led to the formation of seven atom or seven OH-group clusters with S = (5)/(2) that were of a special interest. The coincidence of symmetry of the clusters with the graphene lattice strengthens the stability of the cluster. For (OH)(7) clusters that were situated greater than 3 nm from one another, the reconstruction barrier to a nonmagnetic configuration was approximately 0.4 eV, whereas for H(7) clusters, there was no barrier and the high-spin state was unstable. Stability of the high-spin clusters increased if they were formed on top of ripples. Exchange interactions between the clusters were studied and we have shown that the ferromagnetic state is improbable. The role of the chemical composition of the solvent used for the delamination of graphite is discussed.

Structural defects in graphene

Graphene is one of the most promising materials in nanotechnology. The electronic and mechanical properties of graphene samples with high perfection of the atomic lattice are outstanding, but structural defects, which may appear during growth or processing, deteriorate the performance of graphene-based devices. However, deviations from perfection can be useful in some applications, as they make it possible to tailor the local properties of graphene and to achieve new functionalities. In this article, the present knowledge about point and line defects in graphene are reviewed. Particular emphasis is put on the unique ability of graphene to reconstruct its lattice around intrinsic defects, leading to interesting effects and potential applications. Extrinsic defects such as foreign atoms which are of equally high importance for designing graphene-based devices with dedicated properties are also discussed.

The role of sp-hybridized atoms in carbon ferromagnetism: a spin-polarized density functional theory calculation

We address the room-temperature (RT) carbon ferromagnetism by considering the magnetic states of low-dimensional carbons linked by sp-hybridized carbon atoms. Based on the spin-polarized density functional theory calculations, we find that the sp(*) orbitals of carbon atoms can bring magnetic moments into different carbon allotropes which may eventually give rise to the long-range ferromagnetic ordering at room temperature through an indirect carrier-mediated coupling mechanism. The fact that this indirect coupling is Fermi-level-dependent predicts that the individual magnetism of diverse carbon materials is governed by their chemical environments. This mechanism may help to illuminate the RT magnetic properties of carbon-based materials and to explore the new magnetic applications of carbon materials.

Itinerant flat-band magnetism in hydrogenated carbon nanotubes

We investigate the electronic and magnetic properties of hydrogenated carbon nanotubes using ab initio spin-polarized calculations within both the local density approximation (LDA) and the generalized gradient approximation (GGA). We find that the combination of charge transfer and carbon network distortion makes the spin-polarized flat-band appear in the tube's energy gap. Various spin-dependent ground state properties are predicted with the changes of the radii, the chiralities of the tubes, and the concentration of hydrogen. It is found that strain or external electric field can effectively modulate the flat-band spin-splitting and even induce an insulator-metal transition.

Substrate-induced magnetism in epitaxial graphene buffer layers

Magnetism in graphene is of fundamental as well as technological interest, with potential applications in molecular magnets and spintronic devices. While defects and/or adsorbates in freestanding graphene nanoribbons and graphene sheets have been shown to cause itinerant magnetism, controlling the density and distribution of defects and adsorbates is in general difficult. We show from first principles calculations that graphene buffer layers on SiC(0001) can also show intrinsic magnetism. The formation of graphene-substrate chemical bonds disrupts the graphene pi-bonds and causes localization of graphene states near the Fermi level. Exchange interactions between these states lead to itinerant magnetism in the graphene buffer layer. We demonstrate the occurrence of magnetism in graphene buffer layers on both bulk-terminated as well as more realistic adatom-terminated SiC(0001) surfaces. Our calculations show that adatom density has a profound effect on the spin distribution in the graphene buffer layer, thereby providing a means of engineering magnetism in epitaxial graphene.

Magnetism in graphene due to single-atom defects: dependence on the concentration and packing geometry of defects

The magnetism in graphene due to single-atom defects is examined by using spin-polarized density functional theory. The magnetic moment per defect due to substitutional atoms and vacancy defects is dependent on the density of defects, while that due to adatom defects is independent of the density of defects. It reduces to zero with decrease in the density of substitutional atoms. However, it increases with decrease in density of vacancies. The graphene sheet with B adatoms is nonmagnetic, but with C and N adatoms it is magnetic. The adatom defects distort the graphene sheet near the defect perpendicular to the sheet. The distortion in graphene due to C and N adatoms is significant, while the distortion due to B adatoms is very small. The vacancy and substitutional atom (B, N) defects in graphene are planar in the sense that there is in-plane displacement of C atoms near the vacancy and substitutional defects. Upon relaxation the displacement of C atoms and the formation of pentagons near the vacancy site due to Jahn-Teller distortion depends upon the density and packing geometry of vacancies.