High-performance semiconductor quantum-dot single-photon sources

Ultrafast quantum key distribution using fully parallelized quantum channels

The field of quantum information processing offers secure communication protected by the laws of quantum mechanics and is on the verge of finding wider application for the information transfer of sensitive data. To improve cost-efficiency, extensive research is being carried out on the various components required for high data throughput using quantum key distribution (QKD). Aiming for an application-oriented solution, we report the realization of a multichannel QKD system for plug-and-play high-bandwidth secure communication at telecom wavelengths. We designed a rack-sized multichannel superconducting nanowire single photon detector (SNSPD) system, as well as a highly parallelized time-correlated single photon counting (TCSPC) unit. Our system is linked to an FPGA-controlled QKD evaluation setup for continuous operation, allowing us to achieve high secret key rates using a coherent-one-way protocol.

Spin texture and chiral coupling of circularly polarized dipole field

We show that a circularly polarized electric dipole harbors a near-field concentrated wave which orbits around with an energy flux significantly larger (five orders of magnitudes at ∼1 nm radial distance) than far-field radiation. This near-field wave is found to carry transverse spins and reveal skyrmion spin texture (Néel-type). By performing electromagnetic analysis and numerical simulation, we demonstrate chiral extraction of a near-field rotational energy flux: the confined energy flow is out-coupled to surface plasmons on metal surface, whose curvature is designed to provide orbital angular momentum matched to spin angular momentum of dipole field, that is, to facilitate spin-orbit interaction. Strong coupling occurs with high chiral selectivity (∼113) and Purcell enhancement (∼17) when both linear and angular momenta are matched between dipole field and surface plasmons. Existence of a high-intensity energy flux in the deep-bottom near-field region (r ∼ 1 nm) opens up an interesting avenue in altering fundamental properties of dipole emission. For example, extracting ∼1% of this flux would result in enhancing spontaneous emission rate by ∼1000 times.

Inorganic Halide Perovskite Quantum Dots: A Versatile Nanomaterial Platform for Electronic Applications

Metal halide perovskites have generated significant attention in recent years because of their extraordinary physical properties and photovoltaic performance. Among these, inorganic perovskite quantum dots (QDs) stand out for their prominent merits, such as quantum confinement effects, high photoluminescence quantum yield, and defect-tolerant structures. Additionally, ligand engineering and an all-inorganic composition lead to a robust platform for ambient-stable QD devices. This review presents the state-of-the-art research progress on inorganic perovskite QDs, emphasizing their electronic applications. In detail, the physical properties of inorganic perovskite QDs will be introduced first, followed by a discussion of synthesis methods and growth control. Afterwards, the emerging applications of inorganic perovskite QDs in electronics, including transistors and memories, will be presented. Finally, this review will provide an outlook on potential strategies for advancing inorganic perovskite QD technologies.

Cavity-Enhanced 2D Material Quantum Emitters Deterministically Integrated with Silicon Nitride Microresonators

Optically active defects in 2D materials, such as hexagonal boron nitride (hBN) and transition-metal dichalcogenides (TMDs), are an attractive class of single-photon emitters with high brightness, operation up to room temperature, site-specific engineering of emitter arrays with strain and irradiation techniques, and tunability with external electric fields. In this work, we demonstrate a novel approach to precisely align and embed hBN and TMDs within background-free silicon nitride microring resonators. Through the Purcell effect, high-purity hBN emitters exhibit a cavity-enhanced spectral coupling efficiency of up to 46% at room temperature, exceeding the theoretical limit (up to 40%) for cavity-free waveguide-emitter coupling and demonstrating nearly a 1 order of magnitude improvement over previous work. The devices are fabricated with a CMOS-compatible process and exhibit no degradation of the 2D material optical properties, robustness to thermal annealing, and 100 nm positioning accuracy of quantum emitters within single-mode waveguides, opening a path for scalable quantum photonic chips with on-demand single-photon sources.

On-chip generation and dynamic piezo-optomechanical rotation of single photons

Integrated photonic circuits are key components for photonic quantum technologies and for the implementation of chip-based quantum devices. Future applications demand flexible architectures to overcome common limitations of many current devices, for instance the lack of tuneabilty or built-in quantum light sources. Here, we report on a dynamically reconfigurable integrated photonic circuit comprising integrated quantum dots (QDs), a Mach-Zehnder interferometer (MZI) and surface acoustic wave (SAW) transducers directly fabricated on a monolithic semiconductor platform. We demonstrate on-chip single photon generation by the QD and its sub-nanosecond dynamic on-chip control. Two independently applied SAWs piezo-optomechanically rotate the single photon in the MZI or spectrally modulate the QD emission wavelength. In the MZI, SAWs imprint a time-dependent optical phase and modulate the qubit rotation to the output superposition state. This enables dynamic single photon routing with frequencies exceeding one gigahertz. Finally, the combination of the dynamic single photon control and spectral tuning of the QD realizes wavelength multiplexing of the input photon state and demultiplexing it at the output. Our approach is scalable to multi-component integrated quantum photonic circuits and is compatible with hybrid photonic architectures and other key components for instance photonic resonators or on-chip detectors.

Lattice distortion inducing exciton splitting and coherent quantum beating in CsPbI3 perovskite quantum dots

Anisotropic exchange splitting in semiconductor quantum dots results in bright-exciton fine-structure splitting important for quantum information processing. Direct measurement of fine-structure splitting usually requires single/few quantum dots at liquid-helium temperature because of its sensitivity to quantum dot size and shape, whereas measuring and controlling fine-structure splitting at an ensemble level seem to be impossible unless all the dots are made to be nearly identical. Here we report strong bright-exciton fine-structure splitting up to 1.6 meV in solution-processed CsPbI₃ perovskite quantum dots, manifested as quantum beats in ensemble-level transient absorption at liquid-nitrogen to room temperature. The splitting is robust to quantum dot size and shape heterogeneity, and increases with decreasing temperature, pointing towards a mechanism associated with orthorhombic distortion of the perovskite lattice. Effective-mass-approximation calculations reveal an intrinsic 'fine-structure gap' that agrees well with the observed fine-structure splitting. This gap stems from an avoided crossing of bright excitons confined in orthorhombically distorted quantum dots that are bounded by the pseudocubic {100} family of planes.

Role of Interdiffusion and Segregation during the Life of Indium Gallium Arsenide Quantum Dots, from Cradle to Grave

This article summarizes our understanding of the interplay between diffusion and segregation during epitaxial growth of InGaAs and InAs quantum dots. These quantum dots form spontaneously on flat GaAs (001) single-crystalline substrates by the so-called Stranski-Krastanow growth mechanism once a sufficient amount of indium has accumulated on the surface. Initially a perfectly flat wetting layer is formed. This strained layer then starts to roughen as strain increases, leading first to small, long-range surface undulations and then to tiny coherent islands. These continue to grow, accumulating indium both from the underlying wetting layer by lateral indium segregation and from within these islands by vertical segregation, which for InGaAs deposition results in an indium-enriched InGaAs alloy in the centre of the quantum dots. For pure InAs deposition, interdiffusion also results in an InGaAs alloy. Further deposition can lead to the formation of misfit dislocations that nucleate at the edges of the islands and are generally sought to be avoided. Overgrowth by GaAs or InGaAs alloys with low indium content commences preferentially between the islands, avoiding their strained edges, which initially leads to trench formation. Further deposition is necessary to cap these quantum dots effectively and to re-gain an almost flat surface that can then be used for subsequent deposition of multiple layers of quantum dots as needed for many optoelectronic devices.

Single charge control of localized excitons in heterostructures with ferroelectric thin films and two-dimensional transition metal dichalcogenides

Single charge control of localized excitons (LXs) in two-dimensional transition metal dichalcogenides (TMDCs) is crucial for potential applications in quantum information processing and storage. However, traditional electrostatic doping method by applying metallic gates onto TMDCs may cause inhomogeneous charge distribution, optical quenching, and energy loss. Herein, by locally controlling the ferroelectric polarization of the ferroelectric thin film BiFeO₃ (BFO) with a scanning probe, we can deterministically manipulate the doping type of monolayer WSe₂ to achieve p-type and n-type doping. This nonvolatile approach can maintain the doping type and hold the localized excitonic charges for a long time without applied voltage. Our work demonstrated that the ferroelectric polarization of BFO can control the charges of LXs effectively. Neutral and charged LXs have been observed in different ferroelectric polarization regions, confirmed by magnetic optical measurement. Highly circular polarization degree with 90% photon emission from these quantum emitters was achieved in high magnetic fields. Controlling the single charge of LXs in a non-volatile way shows a great potential for deterministic photon emission with desired charge states for photonic long-term memory.

Efficient Single-Photon Sources Based on Chlorine-Doped ZnSe Nanopillars with Growth Controlled Emission Energy

Isolated impurity states in epitaxially grown semiconductor systems possess important radiative features such as distinct wavelength emission with a very short radiative lifetime and low inhomogeneous broadening, which make them promising for the generation of indistinguishable single photons. In this study, we investigate chlorine-doped ZnSe/ZnMgSe quantum well (QW) nanopillar (NP) structures as a highly efficient solid-state single-photon source operating at cryogenic temperatures. We show that single photons are generated due to the radiative recombination of excitons bound to neutral Cl atoms in ZnSe QW and the energy of the emitted photon can be tuned from about 2.85 down to 2.82 eV with ZnSe well width increase from 2.7 to 4.7 nm. Following the developed advanced technology, we fabricate NPs with a diameter of about 250 nm using a combination of dry and wet-chemical etching of epitaxially grown ZnSe/ZnMgSe QW structures. The remaining resist mask serves as a spherical- or cylindrical-shaped solid immersion lens on top of NPs and leads to the emission intensity enhancement by up to an order of magnitude in comparison to the pillars without any lenses. NPs with spherical-shaped lenses show the highest emission intensity values. The clear photon-antibunching effect is confirmed by the measured value of the second-order correlation function at a zero time delay of 0.14. The developed single-photon sources are suitable for integration into scalable photonic circuits.

Self-aligned patterning technique for fabricating high-performance diamond sensor arrays with nanoscale precision

Efficient, nanoscale precision alignment of defect center creation in photonics structures in challenges the realization of high-performance photonic devices and quantum technology applications. Here, we propose a facile self-aligned patterning technique based on conventional engineering technology, with doping precision that can reach ~15 nm. We demonstrate this technique by fabricating diamond nanopillar sensor arrays with high consistency and near-optimal photon counts. The sensor array achieves high yield approaching the theoretical limit, and high efficiency for filtering sensors with different numbers of nitrogen vacancy centers. Combined with appropriate crystal orientation, the system achieves a saturated fluorescence rate of 4.34 Mcps and effective fluorescence-dependent detection sensitivity of 1800 cps^-1/2 . These sensors also show enhanced spin properties in the isotope-enriched diamond. Our technique is applicable to all similar solid-state systems and could facilitate the development of parallel quantum sensing and scalable information processing.

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

The development of the low dislocation density of the Si-based GaAs buffer is considered the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated circuits. To prepare the high-quality GaAs layer on the Si substrate, we employed an engineered Ge-buffer on Si, used thermal cycle annealing, and introduced filtering layers, e.g., strained-layer superlattices, to control/reduce the threading dislocation density in the active part of the laser. In this way, a low defect density of 2.9 × 10⁷ cm^-2 could be achieved in the GaAs layer with a surface roughness of 1.01 nm. Transmission electron microscopy has been applied to study the effect of cycling, annealing, and filtering layers for blocking or bending threading-dislocation into the InAs QDs active region of the laser. In addition, the dependence of optical properties of InAs QDs on the growth temperature was also investigated. The results show that a density of 3.4 × 10¹⁰ InAs quantum dots could be grown at 450 °C, and the photoluminescence exhibits emission wavelengths of 1274 nm with a fullwidth at half-maximum (FWHM) equal to 32 nm at room temperature. The laser structure demonstrates a peak at 1.27 μm with an FWHM equal to 2.6 nm under a continuous-wave operation with a threshold current density of ∼158 A/cm² for a 4-μm narrow-ridge width InAs QD device. This work, therefore, paves the path for a monolithic solution for photonic integrated circuits when III-V light sources (which is required for Si photonics) are grown on a Ge-platform (engineered Ge-buffer on Si) for the integration of the CMOS part with other photonic devices on the same chip in near future.

Coupling light emission of single-photon sources into single-mode fibers: mode matching, coupling efficiencies, and thermo-optical effects

We discuss the coupling efficiency of single-photon sources into single-mode fibers using 3D printed micro-optical lens designs. Using the wave propagation method, we optimize lens systems for two different quantum light sources and assess the results in terms of maximum coupling efficiencies, misalignment effects, and thermo-optical influences. Thereby, we compare singlet lens designs with one lens printed onto the fiber with doublet lens designs with an additional lens printed onto the semiconductor substrate. The single-photon sources are quantum dots based on microlenses and circular Bragg grating cavities at 930 nm and 1550 nm, respectively.

SUPER Scheme in Action: Experimental Demonstration of Red-Detuned Excitation of a Quantum Emitter

The quest for the perfect single-photon source includes finding the optimal protocol for exciting the quantum emitter. Coherent optical excitation was, up until now, achieved by tuning the laser pulses to the transition frequency of the emitter, either directly or in average. Recently, it was theoretically discovered that an excitation with two red-detuned pulses is also possible where neither of which would yield a significant upper-level population individually. We show that the so-called swing-up of quantum emitter population (SUPER) scheme can be implemented experimentally with similar properties to existing schemes by precise amplitude shaping of a broadband pulse. Because of its truly off-resonant nature, this scheme has the prospect of powering high-purity photon sources with superior photon count rate.

Nanoscale 3D spatial addressing and valence control of quantum dots using wireframe DNA origami

Control over the copy number and nanoscale positioning of quantum dots (QDs) is critical to their application to functional nanomaterials design. However, the multiple non-specific binding sites intrinsic to the surface of QDs have prevented their fabrication into multi-QD assemblies with programmed spatial positions. To overcome this challenge, we developed a general synthetic framework to selectively attach spatially addressable QDs on 3D wireframe DNA origami scaffolds using interfacial control of the QD surface. Using optical spectroscopy and molecular dynamics simulation, we investigated the fabrication of monovalent QDs of different sizes using chimeric single-stranded DNA to control QD surface chemistry. By understanding the relationship between chimeric single-stranded DNA length and QD size, we integrated single QDs into wireframe DNA origami objects and visualized the resulting QD-DNA assemblies using electron microscopy. Using these advances, we demonstrated the ability to program arbitrary 3D spatial relationships between QDs and dyes on DNA origami objects by fabricating energy-transfer circuits and colloidal molecules. Our design and fabrication approach enables the geometric control and spatial addressing of QDs together with the integration of other materials including dyes to fabricate hybrid materials for functional nanoscale photonic devices.

Perfect Photon Indistinguishability from a Set of Dissipative Quantum Emitters

Single photon sources (SPS) based on semiconductor quantum dot (QD) platforms are restricted to low temperature (T) operation due to the presence of strong dephasing processes. Although the integration of QD in optical cavities provides an enhancement of its emission properties, the technical requirements for maintaining high indistinguishability (I) at high T are still beyond the state of the art. Recently, new theoretical approaches have shown promising results by implementing two-dipole-coupled-emitter systems. Here, we propose a platform based on an optimized five-dipole-coupled-emitter system coupled to a cavity which enables perfect I at high T. Within our scheme the realization of perfect I single photon emission with dissipative QDs is possible using well established photonic platforms. For the optimization procedure we have developed a novel machine-learning approach which provides a significant computational-time reduction for high demanding optimization algorithms. Our strategy opens up interesting possibilities for the optimization of different photonic structures for quantum information applications, such as the reduction of quantum decoherence in clusters of coupled two-level quantum systems.

Role of Confined Optical Phonons in Exciton Generation in Spherical Quantum Dot

Optical control of excitonic states in semiconducting quantum dots has enabled it to be deployed as a qubit for quantum information processing. For self-assembled quantum dots, these excitonic states couple with phonons in the barrier material, for which the previous studies have shown that such exciton-phonon coupling can also lead to the generation of exciton, paving the way for their deployment in qubit-state preparation. Previous studies on self-assembled quantum dots comprising polar materials have considered exciton-phonon coupling by treating phonon modes as bulk acoustic modes only, owing to nearly the same acoustic property of the dot and barrier material. However, the dimensional confinement leads to significant modification phonon modes, even though acoustic confinement is weak but optical confinement cannot be overlooked. In this paper, we investigate for the first time the exciton-optical phonon coupling using dielectric continuum model duly accounting for the dimensional confinement leading to exciton generation. We report that at low temperatures (below 10 K), the exciton creation rate attributed to confined optical phonon is approximately 5.7 times (~6) slower than bulk acoustic phonons, which cannot be ignored, and it should be accounted for in determining the effective phonon assisted exciton creation rate.

Quantum interference of identical photons from remote GaAs quantum dots

Photonic quantum technology provides a viable route to quantum communication^1,2, quantum simulation³ and quantum information processing⁴. Recent progress has seen the realization of boson sampling using 20 single photons³ and quantum key distribution over hundreds of kilometres². Scaling the complexity requires architectures containing multiple photon sources, photon counters and a large number of indistinguishable single photons. Semiconductor quantum dots are bright and fast sources of coherent single photons^5-9. For applications, a roadblock is the poor quantum coherence on interfering single photons created by independent quantum dots^10,11. Here we demonstrate two-photon interference with near-unity visibility (93.0 ± 0.8)% using photons from two completely separate GaAs quantum dots. The experiment retains all the emission into the zero phonon line-only the weak phonon sideband is rejected; temporal post-selection is not employed. By exploiting quantum interference, we demonstrate a photonic controlled-not circuit and an entanglement with fidelity of (85.0 ± 1.0)% between photons of different origins. The two-photon interference visibility is high enough that the entanglement fidelity is well above the classical threshold. The high mutual coherence of the photons stems from high-quality materials, diode structure and relatively large quantum dot size. Our results establish a platform-GaAs quantum dots-for creating coherent single photons in a scalable way.

Efficient generation of entangled multiphoton graph states from a single atom

The central technological appeal of quantum science resides in exploiting quantum effects, such as entanglement, for a variety of applications, including computing, communication and sensing¹. The overarching challenge in these fields is to address, control and protect systems of many qubits against decoherence². Against this backdrop, optical photons, naturally robust and easy to manipulate, represent ideal qubit carriers. However, the most successful technique so far for creating photonic entanglement³ is inherently probabilistic and, therefore, subject to severe scalability limitations. Here we report the implementation of a deterministic protocol^4–6 for the creation of photonic entanglement with a single memory atom in a cavity⁷. We interleave controlled single-photon emissions with tailored atomic qubit rotations to efficiently grow Greenberger–Horne–Zeilinger (GHZ) states⁸ of up to 14 photons and linear cluster states⁹ of up to 12 photons with a fidelity lower bounded by 76(6)% and 56(4)%, respectively. Thanks to a source-to-detection efficiency of 43.18(7)% per photon, we measure these large states about once every minute, which is orders of magnitude faster than in any previous experiment^3,10–13. In the future, this rate could be increased even further, the scheme could be extended to two atoms in a cavity^14,15 or several sources could be quantum mechanically coupled¹⁶, to generate higher-dimensional cluster states¹⁷. Overcoming the limitations encountered by probabilistic schemes for photonic entanglement generation, our results may offer a way towards scalable measurement-based quantum computation^18,19 and communication^20,21.

Using a single memory atom in a cavity, a deterministic protocol is implemented to efficiently grow Greenberger–Horne–Zeilinger and linear cluster states by means of single-photon emissions.

Efficient Source of Shaped Single Photons Based on an Integrated Diamond Nanophotonic System

An efficient, scalable source of shaped single photons that can be directly integrated with optical fiber networks and quantum memories is at the heart of many protocols in quantum information science. We demonstrate a deterministic source of arbitrarily temporally shaped single-photon pulses with high efficiency [detection efficiency=14.9%] and purity [g^{(2)}(0)=0.0168] and streams of up to 11 consecutively detected single photons using a silicon-vacancy center in a highly directional fiber-integrated diamond nanophotonic cavity. Combined with previously demonstrated spin-photon entangling gates, this system enables on-demand generation of streams of correlated photons such as cluster states and could be used as a resource for robust transmission and processing of quantum information.

Three-Dimensional Electrical Control of the Excitonic Fine Structure for a Quantum Dot in a Cavity

The excitonic fine structure plays a key role for the quantum light generated by semiconductor quantum dots, both for entangled photon pairs and single photons. Controlling the excitonic fine structure has been demonstrated using electric, magnetic, or strain fields, but not for quantum dots in optical cavities, a key requirement to obtain high source efficiency and near-unity photon indistinguishability. Here, we demonstrate the control of the fine structure splitting for quantum dots embedded in micropillar cavities. We propose and implement a scheme based on remote electrical contacts connected to the pillar cavity through narrow ridges. Numerical simulations show that such a geometry allows for a three-dimensional control of the electrical field. We experimentally demonstrate tuning and reproducible canceling of the fine structure, a crucial step for the reproducibility of quantum light source technology.

Direct Patterning of Perovskite Nanocrystals on Nanophotonic Cavities with Electrohydrodynamic Inkjet Printing

Overcoming the challenges of patterning luminescent materials will unlock additive and more sustainable paths for the manufacturing of next-generation on-chip photonic devices. Electrohydrodynamic (EHD) inkjet printing is a promising method for deterministically placing emitters on these photonic devices. However, the use of this technique to pattern luminescent lead halide perovskite nanocrystals (NCs), notable for their defect tolerance and impressive optical and spin coherence properties, for integration with optoelectronic devices remains unexplored. In this work, we additively deposit nanoscale CsPbBr₃ NC features on photonic structures via EHD inkjet printing. We perform transmission electron microscopy of EHD inkjet printed NCs to demonstrate that the NCs' structural integrity is maintained throughout the printing process. Finally, NCs are deposited with sub-micrometer control on an array of parallel silicon nitride nanophotonic cavities and demonstrate cavity-emitter coupling via photoluminescence spectroscopy. These results demonstrate EHD inkjet printing as a scalable, precise method to pattern luminescent nanomaterials for photonic applications.

Bright Quantum Dot Single-Photon Emitters at Telecom Bands Heterogeneously Integrated on Si

Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assembled semiconductor quantum dots (QDs) efficiently emit photons in the telecom bands (1460-1625 nm) and allow for heterogeneous integration with Si. In this work, we report on a novel, robust, and industry-compatible approach for achieving single-photon emission from InAs/InP QDs heterogeneously integrated with a Si substrate. As a proof of concept, we demonstrate a simple vertical emitting device, employing a metallic mirror beneath the QD emitter, and experimentally obtained photon extraction efficiencies of ∼10%. Nevertheless, the figures of merit of our structures are comparable with values previously only achieved for QDs emitting at shorter wavelength or by applying technically demanding fabrication processes. Our architecture and the simple fabrication procedure allows for the demonstration of high-purity single-photon generation with a second-order correlation function at zero time delay, g ⁽²⁾(τ = 0) < 0.02, without any corrections at continuous wave excitation at the liquid helium temperature and preserved up to 50 K. For pulsed excitation, we achieve the as-measured g ⁽²⁾(0) down to 0.205 ± 0.020 (0.114 ± 0.020 with background coincidences subtracted).

Tailoring the Emission Wavelength of Color Centers in Hexagonal Boron Nitride for Quantum Applications

Optical quantum technologies promise to revolutionize today’s information processing and sensors. Crucial to many quantum applications are efficient sources of pure single photons. For a quantum emitter to be used in such application, or for different quantum systems to be coupled to each other, the optical emission wavelength of the quantum emitter needs to be tailored. Here, we use density functional theory to calculate and manipulate the transition energy of fluorescent defects in the two-dimensional material hexagonal boron nitride. Our calculations feature the HSE06 functional which allows us to accurately predict the electronic band structures of 267 different defects. Moreover, using strain-tuning we can tailor the optical transition energy of suitable quantum emitters to match precisely that of quantum technology applications. We therefore not only provide a guide to make emitters for a specific application, but also have a promising pathway of tailoring quantum emitters that can couple to other solid-state qubit systems such as color centers in diamond.

Photonic-circuited resonance fluorescence of single molecules with an ultrastable lifetime-limited transition

Resonance fluorescence as the emission of a resonantly-excited two-level quantum system promises indistinguishable single photons and coherent high-fidelity quantum-state manipulation of the matter qubit, which underpin many quantum information processing protocols. Real applications of the protocols demand high degrees of scalability and stability of the experimental platform, and thus favor quantum systems integrated on one chip. However, the on-chip solution confronts several formidable challenges compromising the scalability prospect, such as the randomness, spectral wandering and scattering background of the integrated quantum systems near heterogeneous and nanofabricated material interfaces. Here we report an organic-inorganic hybrid integrated quantum photonic platform that circuits background-free resonance fluorescence of single molecules with an ultrastable lifetime-limited transition. Our platform allows a collective alignment of the dipole orientations of many isolated molecules with the photonic waveguide. We demonstrate on-chip generation, beam splitting and routing of resonance-fluorescence single photons with a signal-to-background ratio over 3000 in the waveguide at the weak excitation limit. Crucially, we show the photonic-circuited single molecules possess a lifetime-limited-linewidth transition and exhibit inhomogeneous spectral broadenings of only about 5% over hours' measurements. These findings and the versatility of our platform pave the way for scalable quantum photonic networks.

AlGaAs Nonlinear Integrated Photonics

Practical applications implementing integrated photonic circuits can benefit from nonlinear optical functionalities such as wavelength conversion, all-optical signal processing, and frequency-comb generation, among others. Numerous nonlinear waveguide platforms have been explored for these roles; the group of materials capable of combining both passive and active functionalities monolithically on the same chip is III–V semiconductors. AlGaAs is the most studied III–V nonlinear waveguide platform to date; it exhibits both second- and third-order optical nonlinearity and can be used for a wide range of integrated nonlinear photonic devices. In this review, we conduct an extensive overview of various AlGaAs nonlinear waveguide platforms and geometries, their nonlinear optical performances, as well as the measured values and wavelength dependencies of their effective nonlinear coefficients. Furthermore, we highlight the state-of-the-art achievements in the field, among which are efficient tunable wavelength converters, on-chip frequency-comb generation, and ultra-broadband on-chip supercontinuum generation. Moreover, we overview the applications in development where AlGaAs nonlinear functional devices aspire to be the game-changers. Among such applications, there is all-optical signal processing in optical communication networks and integrated quantum photonic circuits.

Beating signals in CdSe quantum dots measured by low-temperature 2D spectroscopy

Advances in ultrafast spectroscopy can provide access to dynamics involving nontrivial quantum correlations and their evolutions. In coherent 2D spectroscopy, the oscillatory time dependence of a signal is a signature of such quantum dynamics. Here we study such beating signals in electronic coherent 2D spectroscopy of CdSe quantum dots (CdSe QDs) at 77 K. The beating signals are analyzed in terms of their positive and negative Fourier components. We conclude that the beatings originate from coherent LO-phonons of CdSe QDs. No evidence for the quantum dot size dependence of the LO-phonon frequency was identified.

Heterodyne spectrometer sensitivity limit for quantum networking

Optical heterodyne detection-based spectrometers are attractive due to their relatively simple construction and ultrahigh resolution. Here we demonstrate a proof-of-principle single-mode optical-fiber-based heterodyne spectrometer that has picometer resolution and quantum-limited sensitivity around 1550 nm. Moreover, we report a generalized quantum limit of detecting broadband multispectral-temporal-mode light using heterodyne detection, which provides a sensitivity limit on a heterodyne detection-based optical spectrometer. We then compare this sensitivity limit to several spectrometer types and dim light sources of interest such as spontaneous parametric downconversion, Raman scattering, and spontaneous four-wave mixing. We calculate that the heterodyne spectrometer is significantly less sensitive than a single-photon detector and is unable to detect these dim light sources, except for the brightest and narrowest-bandwidth examples.

Quantification of Exciton Fine Structure Splitting in a Two-Dimensional Perovskite Compound

Applications of two-dimensional (2D) perovskites have significantly outpaced the understanding of many fundamental aspects of their photophysics. The optical response of 2D lead halide perovskites is dominated by strongly bound excitonic states. However, a comprehensive experimental verification of the exciton fine structure splitting and associated transition symmetries remains elusive. Here we employ low temperature magneto-optical spectroscopy to reveal the exciton fine structure of (PEA)₂PbI₄ (here PEA is phenylethylammonium) single crystals. We observe two orthogonally polarized bright in-plane free exciton (FX) states, both accompanied by a manifold of phonon-dressed states that preserve the polarization of the corresponding FX state. Introducing a magnetic field perpendicular to the 2D plane, we resolve the lowest energy dark exciton state, which although theoretically predicted, has systematically escaped experimental observation (in Faraday configuration) until now. These results corroborate standard multiband, effective-mass theories for the exciton fine structure in 2D perovskites and provide valuable quantification of the fine structure splitting in (PEA)₂PbI₄.

Numerical optimization of single-mode fiber-coupled single-photon sources based on semiconductor quantum dots

We perform extended numerical studies to maximize the overall photon coupling efficiency of fiber-coupled quantum dot single-photon sources emitting in the near-infrared and O-band and C-band. Using the finite element method, we optimize the photon extraction and fiber-coupling efficiency of quantum dot single-photon sources based on micromesas, microlenses, circular Bragg grating cavities and micropillars. The numerical simulations which consider the entire system consisting of the quantum dot source itself, the coupling lens, and the single-mode fiber, yield overall photon coupling efficiencies of up to 83%. Our work provides objectified comparability of different fiber-coupled single-photon sources and proposes optimized geometries for the realization of practical and highly efficient quantum dot single-photon sources.

Tailoring solid-state single-photon sources with stimulated emissions

The coherent interaction of electromagnetic fields with solid-state two-level systems can yield deterministic quantum light sources for photonic quantum technologies. To date, the performance of semiconductor single-photon sources based on three-level systems is limited mainly due to a lack of high photon indistinguishability. Here we tailor the cavity-enhanced spontaneous emission from a ladder-type three-level system in a single epitaxial quantum dot through stimulated emission. After populating the biexciton (XX) of the quantum dot through two-photon resonant excitation, we use another laser pulse to selectively depopulate the XX state into an exciton (X) state with a predefined polarization. The stimulated XX-X emission modifies the X decay dynamics and improves the characteristics of a polarized single-photon source, such as a source brightness of 0.030(2), a single-photon purity of 0.998(1) and an indistinguishability of 0.926(4). Our method can be readily applied to existing quantum dot single-photon sources and expands the capabilities of three-level systems for advanced quantum photonic functionalities.

Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots

III-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature. Here, we report on the evolution of the emission properties of self-assembled GaN/AlN QDs for temperatures ranging from 5 to 300 K. We carefully track the photoluminescence of a single QD and measure an optimum single photon purity of g⁽²⁾(0) = 0.05 ± 0.02 at 5 K and 0.17 ± 0.08 at 300 K. We complement this study with temperature dependent time-resolved photoluminescence measurements (TRPL) performed on a QD ensemble to further investigate the exciton recombination dynamics of such polar zero-dimensional nanostructures. By comparing our results to past reports, we emphasize the complexity of recombination processes in this system. Instead of the more conventional mono-exponential decay typical of exciton recombination, TRPL transients display a bi-exponential feature with short- and long-lived components that persist in the low excitation regime. From the temperature insensitivity of the long-lived excitonic component, we first discard the interplay of dark-to-bright state refilling in the exciton recombination process. Besides, this temperature-invariance also highlights the absence of nonradiative exciton recombinations, a likely direct consequence of the strong carrier confinement observed in GaN/AlN QDs up to 300 K. Overall, our results support the viability of these dots as a potential single-photon source for quantum applications at room temperature.

Integrated room temperature single-photon source for quantum key distribution

High-purity single-photon sources (SPS) that can operate at room temperature are highly desirable for a myriad of applications, including quantum photonics and quantum key distribution. In this work, we realize an ultra-bright solid-state SPS based on an atomic defect in hexagonal boron nitride (hBN) integrated with a solid immersion lens (SIL). The SIL increases the source efficiency by a factor of six, and the integrated system is capable of producing over ten million single photons per second at room temperature. Our results are promising for practical applications of SPS in quantum communication protocols.

Responsive photonic nanopixels with hybrid scatterers

Metallic and dielectric nanoscatterers are optical pigments that offer rich resonating coloration in the subwavelength regime with prolonged material consistency. Recent advances in responsive materials, whose mechanical shapes and optical properties can change in response to stimuli, expand the scope of scattering-based colorations from static to active. Thus, active color-changing pixels are achieved with extremely high spatial resolution, in conjunction with various responsive polymers and phase-change materials. This review discusses recent progress in developing such responsive photonic nanopixels, ranging from electrochromic to other color-changing concepts. We describe what parameters permit modulation of the scattering colors and highlight superior functional devices. Potential fields of application focusing on imaging devices, including active full-color printing and flexible displays, information encryption, anticounterfeiting, and active holograms, are also discussed.

Atomic scale memristive photon source

Memristive devices are an emerging new type of devices operating at the scale of a few or even single atoms. They are currently used as storage elements and are investigated for performing in-memory and neuromorphic computing. Amongst these devices, Ag/amorphous-SiO_x/Pt memristors are among the most studied systems, with the electrically induced filament growth and dynamics being thoroughly investigated both theoretically and experimentally. In this paper, we report the observation of a novel feature in these devices: The appearance of new photoluminescent centers in SiO_x upon memristive switching, and photon emission correlated with the conductance changes. This observation might pave the way towards an intrinsically memristive atomic scale light source with applications in neural networks, optical interconnects, and quantum communication.

Wafer-scale epitaxial modulation of quantum dot density

Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-densities for single QD devices and experiments are challenging to control during epitaxy and are typically found only in limited regions of the wafer. Here, we demonstrate how conventional molecular beam epitaxy (MBE) can be used to modulate the density of optically active QDs in one- and two- dimensional patterns, while still retaining excellent quality. We find that material thickness gradients during layer-by-layer growth result in surface roughness modulations across the whole wafer. Growth on such templates strongly influences the QD nucleation probability. We obtain density modulations between 1 and 10 QDs/µm² and periods ranging from several millimeters down to at least a few hundred microns. This method is universal and expected to be applicable to a wide variety of different semiconductor material systems. We apply the method to enable growth of ultra-low noise QDs across an entire 3-inch semiconductor wafer.

Nucleation control of self-assembled quantum dots is challenging. Here, the authors employ conventional molecular beam epitaxy to achieve wafer-scale density modulation of high-quality quantum dots with tunable periodicity on unpatterned substrates.

An intuitive protocol for polarization-entanglement restoral of quantum dot photon sources with non-vanishing fine-structure splitting

Generation of polarization-entangled photons from quantum dots via the biexciton-exciton recombination cascade is complicated by the presence of an energy splitting between the intermediate excitonic levels, which severely degrades the quality of the entangled photon source. In this paper we present a novel, conceptually simple and straightforward proposal for restoring the entanglement of said source by applying a cascade of time-dependent operations on the emitted photons. This is in striking contrast with the techniques usually employed, that act on the quantum emitter itself in order to remove the fine structure splitting at its root. The feasibility of the implementation with current technology is discussed, and the robustness of the proposed compensation scheme with respect to imperfections of the experimental apparatus is evaluated via a series of Monte Carlo simulations.

InAsP Quantum Dot-Embedded InP Nanowires toward Silicon Photonic Applications

Quantum dot (QD) emitters on silicon platforms have been considered as a fascinating approach to building next-generation quantum light sources toward unbreakable secure communications. However, it has been challenging to integrate position-controlled QDs operating at the telecom band, which is a crucial requirement for practical applications. Here, we report monolithically integrated InAsP QDs embedded in InP nanowires on silicon. The positions of QD nanowires are predetermined by the lithography of gold catalysts, and the 3D geometry of nanowire heterostructures is precisely controlled. The InAsP QD forms atomically sharp interfaces with surrounding InP nanowires, which is in situ passivated by InP shells. The linewidths of the excitonic (X) and biexcitonic (XX) emissions from the QD and their power-dependent peak intensities reveal that the proposed QD-in-nanowire structure could be utilized as a non-classical light source that operates at silicon-transparent wavelengths, showing a great potential for diverse quantum optical and silicon photonic applications.

Nonlinear down-conversion in a single quantum dot

Tailored nanoscale quantum light sources, matching the specific needs of use cases, are crucial building blocks for photonic quantum technologies. Several different approaches to realize solid-state quantum emitters with high performance have been pursued and different concepts for energy tuning have been established. However, the properties of the emitted photons are always defined by the individual quantum emitter and can therefore not be controlled with full flexibility. Here we introduce an all-optical nonlinear method to tailor and control the single photon emission. We demonstrate a laser-controlled down-conversion process from an excited state of a semiconductor quantum three-level system. Based on this concept, we realize energy tuning and polarization control of the single photon emission with a control-laser field. Our results mark an important step towards tailored single photon emission from a photonic quantum system based on quantum optical principles.

Stimulated Generation of Indistinguishable Single Photons from a Quantum Ladder System

We propose a scheme for the generation of highly indistinguishable single photons using semiconductor quantum dots and demonstrate its performance and potential. The scheme is based on the resonant two-photon excitation of the biexciton followed by stimulation of the biexciton to selectively prepare an exciton. Quantum-optical simulations and experiments are in good agreement and show that the scheme provides significant advantages over previously demonstrated excitation methods. The two-photon excitation of the biexciton suppresses re-excitation and enables ultralow multiphoton errors, while the precisely timed stimulation pulse results in very low timing jitter of the photons, and consequently, high indistinguishability. In addition, the polarization of the stimulation pulse allows us to deterministically program the polarization of the emitted photon (H or V). This ensures that all emission of interest occurs in the polarization of the detection channel, resulting in higher brightness than cross-polarized resonant excitation.

Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties

The rapidly developing quantum communication technology requires deterministic quantum emitters that can generate single photons and entangled photon pairs in the third telecom window, in order to be compatible with existing optical fiber networks and on-chip silicon photonic processors. InAs/InP quantum dots (QDs) are among the leading candidates for this purpose, due to their high emission efficiency in the required spectral range. However, fabricating versatile InAs/InP QD-based quantum emitters is challenging, especially as these QDs typically have asymmetric profiles in the growth plane, resulting in a substantial bright-exciton fine structure splitting (FSS). This hinders the generation of entangled photon pairs and thus, compromises the versatility of InAs/InP QDs. We overcome this by implementing droplet epitaxy (DE) synthesis of low surface density (2.8 × 108 cm-2) InAs x P1-x QDs with x = (80 ± 15)% on an (001)-oriented InP substrate. The resulting QDs are located in etched pits, have concave bases, and most importantly, have symmetric in-plane profiles. We provide an analytical model to explain the kinetics of pit formation and QD base shape modification. Our theoretical calculations of electronic states reveal the properties of neutral and charged excitons and biexcitons confined in such QDs, which agree with the optical investigations of individual QDs. The optical response of QDs' ensemble suggests that FSS may indeed be negligible, as reflected in the vanishing degree of linear polarization. However, single QD spectrum gathered from an etched mesa shows moderate FSS of (50 ± 5) µeV that we link to destructive changes made in the QD environment during the post-growth processing. Finally, we show that the studied DE QDs provide a close-to-ideal single-photon emission purity of (92.5 ± 7.5)% in the third telecom window.

Gauge-independent emission spectra and quantum correlations in the ultrastrong coupling regime of open system cavity-QED

A quantum dipole interacting with an optical cavity is one of the key models in cavity quantum electrodynamics (cavity-QED). To treat this system theoretically, the typical approach is to truncate the dipole to two levels. However, it has been shown that in the ultrastrong-coupling regime, this truncation naively destroys gauge invariance. By truncating in a manner consistent with the gauge principle, we introduce master equations for open systems to compute gauge-invariant emission spectra, photon flux rates, and quantum correlation functions which show significant disagreement with previous results obtained using the standard quantum Rabi model. Explicit examples are shown using both the dipole gauge and the Coulomb gauge.

Optical charge injection and coherent control of a quantum-dot spin-qubit emitting at telecom wavelengths

Solid-state quantum emitters with manipulable spin-qubits are promising platforms for quantum communication applications. Although such light-matter interfaces could be realized in many systems only a few allow for light emission in the telecom bands necessary for long-distance quantum networks. Here, we propose and implement an optically active solid-state spin-qubit based on a hole confined in a single InAs/GaAs quantum dot grown on an InGaAs metamorphic buffer layer emitting photons in the C-band. We lift the hole spin-degeneracy using an external magnetic field and demonstrate hole injection, initialization, read-out and complete coherent control using picosecond optical pulses. These results showcase a solid-state spin-qubit platform compatible with preexisting optical fiber networks.

Thin-film InGaAs metamorphic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform

The GaAs-based material system is well-known for hosting InAs quantum dots (QDs) with outstanding optical properties, typically emitting at a wavelength of around 900 nm. The insertion of a metamorphic buffer (MMB) can shift this emission to the technologically attractive telecom C-band range centered at 1550 nm. However, the thickness of common MMB designs (>1 μm) limits their compatibility with most photonic resonator types. Here, we report on the metal-organic vapor-phase epitaxy (MOVPE) growth of a novel InGaAs MMB with a nonlinear indium content grading profile designed to maximize plastic relaxation within minimal layer thickness. This allows us to achieve the necessary transition of the lattice constant and to provide a smooth surface for QD growth within 180 nm. Single-photon emission at 1550 nm from InAs QDs deposited on top of this thin-film MMB is demonstrated. The strength of the new design is proven by integrating it into a bullseye cavity via nano-structuring techniques. The presented advances in the epitaxial growth of QD/MMB structures form the basis for the fabrication of high-quality telecom nonclassical light sources as a key component of photonic quantum technologies.

Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer

We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with gradual composition ensuring a redshift of the QD emission up to the second telecom window. Based on the photoluminescence (PL) measurements and numerical calculations, we analyzed the factors influencing the energies of optical transitions in QDs, among which the QD height seems to be dominating. In addition, polarization anisotropy of the QD emission was observed, which is a fingerprint of significant valence states mixing enhanced by the QD confinement potential asymmetry, driven by the decreased strain with increasing In content in the MBL. The barrier-related transitions were probed by photoreflectance, which combined with photoluminescence data and the PL temperature dependence, allowed for the determination of the carrier activation energies and the main channels of carrier loss, identified as the carrier escape to the MBL barrier. Eventually, the zero-dimensional character of the emission was confirmed by detecting the photoluminescence from single QDs with identified features of the confined neutral exciton and biexciton complexes via the excitation power and polarization dependences.

Generation of Polarization-Entangled Photons from Self-Assembled Quantum Dots in a Hybrid Quantum Photonic Chip

Integration of entangled photon sources in a quantum photonic chip has enabled the most envisioned quantum photonic technologies to be performed in a compact platform with enhanced complexity and stability as compared to bulk optics. However, the technology to generate entangled photon states in a quantum photonic chip that are neither probabilistic nor restricted to low efficiency is still missing. Here, we introduce a hybrid quantum photonic chip where waveguide-coupled self-assembled quantum dots (QDs) are heterogeneously integrated onto a piezoelectric actuator. By exerting an anisotropic stress, we experimentally show that the fine structure splitting of waveguide-coupled quantum dots can be effectively eliminated. This allows for the demonstration of chip-integrated self-assembled QDs for generating and routing polarization-entangled photon pairs. Our results presented here would open up an avenue for implementing on-demand quantum information processing in a quantum photonic chip by employing all-solid-state self-assembled quantum dot emitters.

Super-resolution imaging: when biophysics meets nanophotonics

Probing light-matter interaction at the nanometer scale is one of the most fascinating topics of modern optics. Its importance is underlined by the large span of fields in which such accurate knowledge of light-matter interaction is needed, namely nanophotonics, quantum electrodynamics, atomic physics, biosensing, quantum computing and many more. Increasing innovations in the field of microscopy in the last decade have pushed the ability of observing such phenomena across multiple length scales, from micrometers to nanometers. In bioimaging, the advent of super-resolution single-molecule localization microscopy (SMLM) has opened a completely new perspective for the study and understanding of molecular mechanisms, with unprecedented resolution, which take place inside the cell. Since then, the field of SMLM has been continuously improving, shifting from an initial drive for pushing technological limitations to the acquisition of new knowledge. Interestingly, such developments have become also of great interest for the study of light-matter interaction in nanostructured materials, either dielectric, metallic, or hybrid metallic-dielectric. The purpose of this review is to summarize the recent advances in the field of nanophotonics that have leveraged SMLM, and conversely to show how some concepts commonly used in nanophotonics can benefit the development of new microscopy techniques for biophysics. To this aim, we will first introduce the basic concepts of SMLM and the observables that can be measured. Then, we will link them with their corresponding physical quantities of interest in biophysics and nanophotonics and we will describe state-of-the-art experiments that apply SMLM to nanophotonics. The problem of localization artifacts due to the interaction of the fluorescent emitter with a resonant medium and possible solutions will be also discussed. Then, we will show how the interaction of fluorescent emitters with plasmonic structures can be successfully employed in biology for cell profiling and membrane organization studies. We present an outlook on emerging research directions enabled by the synergy of localization microscopy and nanophotonics.

Resolving the Controversy in Biexciton Binding Energy of Cesium Lead Halide Perovskite Nanocrystals through Heralded Single-Particle Spectroscopy

Understanding exciton-exciton interaction in multiply excited nanocrystals is crucial to their utilization as functional materials. Yet, for lead halide perovskite nanocrystals, which are promising candidates for nanocrystal-based technologies, numerous contradicting values have been reported for the strength and sign of their exciton-exciton interaction. In this work, we unambiguously determine the biexciton binding energy in single cesium lead halide perovskite nanocrystals at room temperature. This is enabled by the recently introduced single-photon avalanche diode array spectrometer, capable of temporally isolating biexciton-exciton emission cascades while retaining spectral resolution. We demonstrate that CsPbBr₃ nanocrystals feature an attractive exciton-exciton interaction, with a mean biexciton binding energy of 10 meV. For CsPbI₃ nanocrystals, we observe a mean biexciton binding energy that is close to zero, and individual nanocrystals show either weakly attractive or weakly repulsive exciton-exciton interaction. We further show that, within ensembles of both materials, single-nanocrystal biexciton binding energies are correlated with the degree of charge-carrier confinement.