ZnO-based ultraviolet photodetectors

High-performance of self-powered UV photodetector with long-term stability based on ZnO nanorods and an iodine-free quasi solid-state electrolyte

Self-powered UV photodetector based on ZnO nanorods and an iodine-free quasi solid-state electrolyte exhibits high photoresponse and great stability.

A self-powered solar-blind ultraviolet photodetector based on a Ag/ZnMgO/ZnO structure with fast response speed

Realization of Ag/ZnMgO/ZnO photodetectors provides a feasible route to develop self-powered solar-blind UV photodetectors with fast response speed.

Fast and Sensitive Solution-Processed Visible-Blind Perovskite UV Photodetectors

The first visible-blind UV photodetector based on MAPbCl3 integrated on a substrate exhibits excellent performance, with responsivities reaching 18 A W(-1) below 400 nm and imaging-compatible response times of 1 ms. This is achieved by using substrate-integrated single crystals, thus overcoming the severe limitations affecting thin films and offering a new application of efficient, solution-processed, visible-transparent perovskite optoelectronics.

Si(C≡C)4-Based Single-Crystalline Semiconductor: Diamond-like Superlight and Superflexible Wide-Bandgap Material for the UV Photoconductive Device

A wide-bandgap SiC4 semiconductor with low density and high elasticity has been designed and characterized by ab initio molecular dynamics simulations and first-principles calculations. The through-space conjugation among the d orbitals of Si and the π* orbitals of ethynyl moieties can remarkably enhance the photoconductivity. This new-type superlight and superflexible semiconductor is predicted to have unique electronic, optical, and mechanical properties, and it is a quite promising material for the high-performance UV optoelectronic devices suitable for various practical demands in a complex environment.

Growth and stability of rocksalt Zn1-xMgxO epilayers and ZnO/MgO superlattice on MgO (100) substrate by molecular beam epitaxy

Zn1-xMgxO films with x = 0.04-0.50 grown on MgO (100) substrates by molecular beam epitaxy retain the rocksalt (rs) crystal structure and grow epitaxially for x ≥ 0.17. In addition, the rs-ZnO epilayer is observed to be stable up to a thickness of 5 nm and also in a ZnO/MgO superlattice sample. However, a portion of the superlattice has transformed to wurtzite (wz)-structure islands in a self-accommodated manner during growth. The transformation is a combination of a Bain distortion, an in-plane rotation of 14.5°, and a Peierls distortion, resulting in an orientation relationship of (100)rs//(101̄0)wz and 〈011〉rs ∼//〈1̄21̄3〉wz. In such a manner, the volume expansion is only necessary along the growth direction and the in-plane strains can be minimized. A negative pressure generated during the transformation of ZnO stabilizes the MgO into a wurtzite structure.

Active Adoption of Void Formation in Metal-Oxide for All Transparent Super-Performing Photodetectors

Could ‘defect-considered’ void formation in metal-oxide be actively used? Is it possible to realize stable void formation in a metal-oxide layer, beyond unexpected observations, for functional utilization? Herein we demonstrate the effective tailoring of void formation of NiO for ultra-sensitive UV photodetection. NiO was formed onto pre-sputtered ZnO for a large size and spontaneously formed abrupt p-NiO/n-ZnO heterojunction device. To form voids at an interface, rapid thermal process was performed, resulting in highly visible light transparency (85–95%). This heterojunction provides extremely low saturation current (<0.1 nA) with an extraordinary rectifying ratio value of over 3000 and works well without any additional metal electrodes. Under UV illumination, we can observe the fast photoresponse time (10 ms) along with the highest possible responsivity (1.8 A W⁻¹) and excellent detectivity (2 × 10¹³ Jones) due to the existence of an intrinsic-void layer at the interface. We consider this as the first report on metal-oxide-based void formation (Kirkendall effect) for effective photoelectric device applications. We propose that the active adoption of ‘defect-considered’ Kirkendall-voids will open up a new era for metal-oxide based photoelectric devices.

Photoelectric Property Modulation by Nanoconfinement in the Longitude Direction of Short Semiconducting Nanorods

Photoelectric property change in half-dimensional (0.5D) semiconducting nanomaterials as a function of illumination light intensity and materials geometry has been systematically studied. Through two independent methods, conductive atomic force microscopy (C-AFM) direct current-voltage acquisition and scanning kelvin probe microscopy (SKPM) surface potential mapping, photoelectric property of 0.5D ZnO nanomaterial has been characterized with exceptional behaviors compared with bulk/micro/one-dimensional (1D) nanomaterial. A new model by considering surface effect, quantum effect, and illumination effect has been successfully built, which could more accurately predict the photoelectric characteristics of 0.5D semiconducting nanomaterials. The findings reported in this study could potentially impact three-dimensional (3D) photoelectronics.

Graphdiyne:ZnO Nanocomposites for High-Performance UV Photodetectors

Graphdiyne (GD), a novel carbon allotrope with a 2D structure comprising benzene rings and carbon-carbon triple bonds, is successfully integrated with ZnO nanoparticles by a wet chemistry method. An ultraviolet photodetector based on these graphdiyne:ZnO nanocomposites exhibits significantly enhanced performance in comparison with a conventional ZnO device. GD may have diverse applications in future optoelectronics.

Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction

Because of the direct band gap of 4.9 eV, β-Ga2O3 has been considered as an ideal material for solar-blind photodetection without any bandgap tuning. Practical applications of the photodetectors require fast response speed, high signal-to-noise ratio, low energy consumption and low fabrication cost. Unfortunately, most reported β-Ga2O3-based photodetectors usually possess a relatively long response time. In addition, the β-Ga2O3 photodetectors based on bulk, the individual 1D nanostructure, and the film often suffer from the high cost, the low repeatability, and the relatively large dark current, respectively. In this paper, a Au/β-Ga2O3 nanowires array film vertical Schottky photodiode is successfully fabricated by a simple thermal partial oxidation process. The device exhibits a very low dark current of 10 pA at -30 V with a sharp cutoff at 270 nm. More interestingly, the 90-10% decay time of our device is only around 64 μs, which is much quicker than any other previously reported β-Ga2O3-based photodetectors. Besides, the self-powering, the excellent stability and the good reproducibility of Au/β-Ga2O3 nanowires array film photodetector are helpful to its commercialization and practical applications.

Nanostructured Photodetectors: From Ultraviolet to Terahertz

Inspired by nanoscience and nanoengineering, numerous nanostructured materials developed by multidisciplinary approaches exhibit excellent photoelectronic properties ranging from ultraviolet to terahertz frequencies. As a new class of building block, nanoscale elements in terms of quantum dots, nanowires, and nanolayers can be used for fabricating photodetectors with high performance. Moreover, in conjunction with traditional photodetectors, they exhibit appealing performance for practical applications including high density of integration, high sensitivity, fast response, and multifunction. Therefore, with the perspective of photodetectors constructed by diverse low-dimensional nanostructured materials, recent advances in nanoscale photodetectors are discussed here; meanwhile, challenges and promising future directions in this research field are proposed.

Radiative mechanism and surface modification of four visible deep level defect states in ZnO nanorods

Visible luminescence from ZnO nanorods (NRs) is attracting large scientific interest for light emission and sensing applications. We study visible luminescent defects in ZnO NRs as a function of post growth thermal treatments, and find four distinct visible deep level defect states (VDLSs): blue (2.52 eV), green (2.23 eV), orange (2.03 eV), and red (1.92 eV). Photoluminescence (PL) studies reveal a distinct modification in the UV (3.25 eV) emission intensity and a shift in the visible spectra after annealing. Annealing at 600 °C in Ar (Ar600) and O2 (O600) causes a blue and red-shift in the visible emission band, respectively. All samples demonstrate orange emission from the core of the NR, with an additional surface related green, blue, and red emission in the As-Prep, Ar600, and O600 samples, respectively. From PL excitation (PLE) measurements we determine the onset energy for population of the various VDLSs, and relate it to the presence of an Urbach tail below the conduction band due to a presence of ionized Zni or Zni complexes. We measured an onset energy of 3.25 eV for the as prepared sample. The onset energy red-shifts in the annealed samples by about 0.05 to 0.1 eV indicating a change in the defect structure, which we relate to the shift in the visible emission. We then used X-ray photoemission spectroscopy (XPS), and elastic recoil detection analysis (ERDA) to understand changes in the surface structure, and H content, respectively. The results of the XPS and ERDA analysis explain how the chemical states are modified due to annealing. We summarize our results by correlating our VDLSs with specific intrinsic defect states to build a model for PL emission in ZnO NRs. These results are important for understanding how to control defect related visible emission for sensing and electroluminescence applications.

Fabrication of flexible self-powered UV detectors based on ZnO nanowires and the enhancement by the decoration of Ag nanoparticles

The flexible self-powered UV detector based on ZnO NWs shows good performance both in flat and bending conditions.

Large area transparent ZnO photodetectors with Au wire network electrodes

A large area highly transparent UV photodetector is fabricated using Au wire networks as transparent electrodes and ZnO as the active layer.

Recent developments of zinc oxide based photocatalyst in water treatment technology: A review

Today, a major issue about water pollution is the residual dyes from different sources (e.g., textile industries, paper and pulp industries, dye and dye intermediates industries, pharmaceutical industries, tannery and craft bleaching industries, etc.), and a wide variety of persistent organic pollutants have been introduced into our natural water resources or wastewater treatment systems. In fact, it is highly toxic and hazardous to the living organism; thus, the removal of these organic contaminants prior to discharge into the environment is essential. Varieties of techniques have been employed to degrade those organic contaminants and advanced heterogeneous photocatalysis involving zinc oxide (ZnO) photocatalyst appears to be one of the most promising technology. In recent years, ZnO photocatalyst have attracted much attention due to their extraordinary characteristics. The high efficiency of ZnO photocatalyst in heterogeneous photocatalysis reaction requires a suitable architecture that minimizes electron loss during excitation state and maximizes photon absorption. In order to further improve the immigration of photo-induced charge carriers during excitation state, considerable effort has to be exerted to further improve the heterogeneous photocatalysis under UV/visible/solar illumination. Lately, interesting and unique features of metal doping or binary oxide photocatalyst system have gained much attention and became favourite research matter among various groups of scientists. It was noted that the properties of this metal doping or binary oxide photocatalyst system primarily depend on the nature of the preparation method and the role of optimum dopants content incorporated into the ZnO photocatalyst. Therefore, this paper presents a critical review of recent achievements in the modification of ZnO photocatalyst for organic contaminants degradation.

Photoconductivities in m-plane and c-plane ZnO epitaxial films grown by chemical vapor deposition on LiGaO2 substrates: a comparative study

Nonpolar (m-plane) and polar (c-plane) ZnO epitaxial films grown by CVD exhibit superior photoconductive performance in different aspects.

ZnO–WS2 heterostructures for enhanced ultra-violet photodetectors

Stacking a CVD-grown WS₂ monolayer onto a sputtered ZnO film can enhance the ZnO photoresponse.

Stretchable photo sensor using perylene/graphene composite on ridged polydimethylsiloxane substrate

To apply in wearable electronics, we propose a stretchable photo sensor that detects an inversely changed resistance by varying light intensity, which is stably operated up to 25% axial strain. Especially, the stretchabity of the proposed photo sensor is achived by using a uniform ridged substrate made of polydimethylsiloxane (PDMS). The proposed device is composed of a thin film of perylene/graphene composite, which is sandwiched between bottom and top indium tin oxide (ITO) transparent electrodes fabricated through electro-hydrodynamic (EHD) technique. The electrical conductivity of perylene is improved by blending graphene with it. The resistance of the proposed photo sensor changes from 108 MΩ to 87 MΩ within the light intensity range of 0 to 400 lux, respectively. Furthermore, the flexibility is verified through a bendability test from 16 mm down to 0 mm and a bending endurance test for more than 1000 cycles. Uniform and smooth deposition of the active layer is tested through surface morphology characterization.

Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes

This paper addressed the effect of post-annealed treatment on the electroluminescence (EL) of an n-ZnO/p-GaN heterojunction light-emitting diode (LED). The bluish light emitted from the 450 °C-annealed LED became reddish as the LED annealed at a temperature of 800 °C under vacuum atmosphere. The origins of the light emission for these LEDs annealed at various temperatures were studied using measurements of electrical property, photoluminescence, and Auger electron spectroscopy (AES) depth profiles. A blue-violet emission located at 430 nm was associated with intrinsic transitions between the bandgap of n-ZnO and p-GaN, the green-yellow emission at 550 nm mainly originating from the deep-level transitions of native defects in the n-ZnO and p-GaN surfaces, and the red emission at 610 nm emerging from the Ga-O interlayer due to interdiffusion at the n-ZnO/p-GaN interface. The above-mentioned emissions also supported the EL spectra of LEDs annealed at 700 °C under air, nitrogen, and oxygen atmospheres, respectively.

Mechanism of Excellent Photoelectric Characteristics in Mixed-Phase ZnMgO Ultraviolet Photodetectors with Single Cutoff Wavelength

Mixed-phase ZnMgO (m-ZMO) thin films with a single absorption edge tuning from ∼3.9 to ∼4.8 eV were realized on a-face sapphire (a-Al2O3) by plasma-assisted molecular beam epitaxy. The small lattice mismatch of both ZnO and MgO with a-Al2O3 should be responsible for the single and controllable absorption edge. Metal-semiconductor-metal (MSM) photodetectors were fabricated based on these m-ZMO films, and the devices have the single cutoff wavelength, which can be tuned from 335 to 275 nm. These devices possess low dark current (78 pA for m-Z0.67M0.33O, 11 pA for m-Z0.59M0.41O, and 4 pA for m-Z0.39M0.61O at 40 V) and high responsivity (434 A/W for m-Z0.67M0.33O, 89.8 A/W for m-Z0.59M0.41O, and 3.7 A/W for m-Z0.39M0.61O at 40 V). Further response study reveals that the 90-10% decay time of m-Z0.67M0.33O, m-Z0.59M0.41O, and m-Z0.39M0.61O is around 37, 30, and 0.7 ms, respectively. Large amounts of heterojunction interfaces between wurtzite ZMO and cubic rock-salt ZMO could be responsible for the low dark current and high responsivity of our mixed-phase devices. The excellent comprehensive performance of m-ZMO UV photodetectors on a-Al2O3 suggests that m-ZMO UV photodetectors should have great applied potential.

Physical properties of annealed ZnO nanowire/CuSCN heterojunctions for self-powered UV photodetectors

The low-cost fabrication of ZnO nanowire/CuSCN heterojunctions is demonstrated by combining chemical bath deposition with impregnation techniques. The ZnO nanowire arrays are completely filled by the CuSCN layer from their bottoms to their tops. The CuSCN layer is formed of columnar grains that are strongly oriented along the [003] direction owing to the polymeric form of the β-rhombohedral crystalline phase. Importantly, an annealing step is found essential in a fairly narrow range of low temperatures, not only for outgassing the solvent from the CuSCN layer, but also for reducing the density of interfacial defects. The resulting electrical properties of annealed ZnO nanowire/CuSCN heterojunctions are strongly improved: a maximum rectification ratio of 2644 at ±2 V is achieved following annealing at 150 °C under air atmosphere, which is related to a strong decrease in the reverse current density. Interestingly, the corresponding self-powered UV photodetectors exhibit a responsivity of 0.02 A/W at zero bias and at 370 nm with a UV-to-visible (370-500 nm) rejection ratio of 100 under an irradiance of 100 mW/cm(2). The UV selectivity at 370 nm can also be readily modulated by tuning the length of ZnO nanowires. Eventually, a significant photovoltaic effect is revealed for this type of heterojunctions, leading to an open circuit voltage of 37 mV and a short circuit current density of 51 μA/cm(2), which may be useful for the self-powering of the complete device. These findings show the underlying physical mechanisms at work in ZnO nanowire/CuSCN heterojunctions and reveal their high potential as self-powered UV photodetectors.

UV sensing using film bulk acoustic resonators based on Au/n-ZnO/piezoelectric-ZnO/Al structure

A new type of ultraviolet (UV) light sensor based on film bulk acoustic wave resonator (FBAR) is proposed. The new sensor uses gold and a thin n-type ZnO layer deposited on the top of piezoelectric layer of FBAR to form a Schottky barrier. The Schottky barrier's capacitance can be changed with UV light, resulting in an enhanced shift in the entire FBAR's resonant frequency. The fabricated UV sensor has a 50 nm thick n-ZnO semiconductor layer with a carrier concentration of ~ 10¹⁷ cm⁻³. A large frequency downshift is observed when UV light irradiates the FBAR. With 365 nm UV light of intensity 1.7 mW/cm², the FBAR with n-ZnO/Au Schottky diode has 250 kHz frequency downshift, much larger than the 60 kHz frequency downshift in a conventional FBAR without the n-ZnO layer. The shift in the new FBAR's resonant frequency is due to the junction formed between Au and n-ZnO semiconductor and its properties changes with UV light. The experimental results are in agreement with the theoretical analysis using an equivalent circuit model of the new FBAR structure.

Wire-shaped ultraviolet photodetectors based on a nanostructured NiO/ZnO coaxial p-n heterojunction via thermal oxidation and hydrothermal growth processes

We report the facile fabrication of wire-shaped ultraviolet photodetectors (WUPDs) by employing a nanostructured zinc oxide (ZnO)/nickel oxide (NiO) coaxial p-n heterojunction. The WUPD consists of a ZnO/NiO coaxial Ni wire and a twisted gold (Au) wire where the Ni and Au are used as the anode and cathode, respectively. For the coaxial p-n heterojunction, the NiO nanostructures (NSs) and the ZnO nanorods (NRs) are subsequently formed on the surface of Ni wire via thermal oxidation and hydrothermal growth processes. With an applied bias of -3.5 V, the WUPD exhibits good photoresponsivity of 7.37 A W(-1) and an external quantum efficiency of 28.1% at an incident light wavelength of 325 nm. Under the UV illumination at a wavelength of 365 nm, the dark current and photocurrent are -3.97 × 10(-7) and -8.47 × 10(-6) A, respectively. For enhancing the photocurrent, the WUPD is threaded through a silver (Ag) coated glass tube which acts as a waveguide to concentrate the UV light of 365 nm on the WUPD. As a result, the photocurrent is significantly improved up to -1.56 × 10(-5) A (i.e., 1.84 times) at the reverse bias of -3.5 V.

A more than six orders of magnitude UV-responsive organic field-effect transistor utilizing a benzothiophene semiconductor and Disperse Red 1 for enhanced charge separation

A more than six orders of magnitude UV-responsive organic field-effect transistor is developed using a benzothiophene (BTBT) semiconductor and strong donor-acceptor Disperse Red 1 as the traps to enhance charge separation. The device can be returned to its low drain current state by applying a short gate bias, and is completely reversible with excellent stability under ambient conditions.

Synthesis and enhanced photoelectric performance of Au/ZnO hybrid hollow sphere

The maximum responsivity (R_λ) and photocurrent of Au/ZnO nanodevice showed 10 times enhancement than that of pure ZnO hollow spheres.

The enhancement of a self-powered UV photodetector based on vertically aligned Ag-modified ZnO nanowires

A Ag nanoparticle-modified ZnO NWs based UV detector displays an excellent performance in UV detection such as high responsivity and fast response time.

Three-dimensional ZnO porous films for self-cleaning ultraviolet photodetectors

Three-dimensional (3D) ZnO porous films composed of an interconnected skeleton were fabricated successfully through atomic layer deposition method using carbon nanoparticles as template.

Ultra-thin V2O5 nanosheet based humidity sensor, photodetector and its enhanced field emission properties

We report the synthesis of V₂O₅ nanosheets by a simple hydrothermal method.

Ag nanoparticles@ZnO nanowire composite arrays: an absorption enhanced UV photodetector

A novel heterojunction ultraviolet (UV) photodetector of assembling Ag nanoparticles (NPs) onto ZnO nanowire (NW) arrays was fabricated via combination of chemical vapor deposition and thermal evaporation route. The fabricated composite Ag@ZnO NW arrays show blue-shift of UV peaks, suppression of the visible peaks, and obvious enhancements in absorption from ultraviolet to infrared region and photoluminescence (PL) emission at room-temperature. These phenomena are attributed to the Localized Surface Plasmon Resonance (LSPR) effect. Benefiting from absorption enhancement and surface heterojunctions, Ag@ZnO heterostructures show a photocurrent increment by 117%, a short response time of 80 ms and a recovery time of 3.27 s under 365 nm UV illumination of 0.24 mW/cm². This research presented a simple route to obtain high performance UV photodetectors and would be of some benefit in optical-electron devices manufacture.

Atomically-thick two-dimensional crystals: electronic structure regulation and energy device construction

Atomically-thick two-dimensional crystals can provide promising opportunities to satisfy people's requirement of next-generation flexible and transparent nanodevices. However, the characterization of these low-dimensional structures and the understanding of their clear structure-property relationship encounter many great difficulties, owing to the lack of long-range order in the third dimensionality. In this review, we survey the recent progress in fine structure characterization by X-ray absorption fine structure spectroscopy and also overview electronic structure modulation by density-functional calculations in the ultrathin two-dimensional crystals. In addition, we highlight their structure-property relationship, transparent and flexible device construction as well as wide applications in photoelectrochemical water splitting, photodetectors, thermoelectric conversion, touchless moisture sensing, supercapacitors and lithium ion batteries. Finally, we outline the major challenges and opportunities that face the atomically-thick two-dimensional crystals. It is anticipated that the present review will deepen people's understanding of this field and hence contribute to guide the future design of high-efficiency energy-related devices.

Rapid fabrication technique for interpenetrated ZnO nanotetrapod networks for fast UV sensors

Two flame-based synthesis methods are presented for fabricating ZnO-nanostructure-based UV photodetectors: burner flame transport synthesis (B-FTS)and crucible flame transport synthesis (C-FTS). B-FTS allows rapid growth of ZnO nanotetrapods and in situ bridging of them into electrical contacts. The photo detector made from interconnected ZnO nanotetrapod networks exhibits fast response/recovery times and a high current ratio under UV illumination.

Performance enhancement of ZnO UV photodetectors by surface plasmons

Surface plasmons, a unique property of metal nanoparticles, have been widely applied to enhance the performance of optical and electrical devices. In this study, a high quality zinc oxide (ZnO) thin film was grown on a quartz substrate by a radio frequency magnetron sputtering technique, and a metal-semiconductor-metal structured ultraviolet detector was prepared on the ZnO film. The responsivity of the photodetector was enhanced from 0.836 to 1.306 A/W by sputtering metal (Pt) nanoparticles on the surface of the device. In addition, the absorption of the ZnO thin film was enhanced partly in the ultraviolet band. It is revealed that Pt nanoparticles play a key role in enhancing the performance of the photodetectors, where surface plasma resonance occurs.

Zinc oxide nanomaterials for biomedical fluorescence detection

One-dimensional zinc oxide nanomaterials have been recently developed into novel, extremely effective, optical signal-enhancing bioplatforms. Their usefulness has been demonstrated in various biomedical fluorescence assays. Fluorescence is extensively used in biology and medicine as a sensitive and noninvasive detection method for tracking and analyzing biological molecules. Achieving high sensitivity via improving signal-to-noise ratio is of paramount importance in fluorescence-based, trace-level detection. Recent advances in the development of optically superior one-dimensional materials have contributed to this important biomedical area of detection. This review article will discuss major research developments that have so far been made in this emerging and exciting topical field. The discussion will cover a broad range of subjects including synthesis of zinc oxide nanorods (ZnO NRs), various properties differentiating them as suitable optical biodetection platforms, their demonstrated applicability in DNA and protein detection, and the nanomaterial characteristics relevant for biomolecular fluorescence enhancement. This review will then summarize the current status of ZnO NR-based biodetection and further elaborate future utility of ZnO NR platforms for advanced biomedical assays, based on their proven advantages. Lastly, present challenges experienced in this topical area will be identified and focal subject areas for future research will be suggested as well.

A phenomenological model for the photocurrent transient relaxation observed in ZnO-based photodetector devices

We present a phenomenological model for the photocurrent transient relaxation observed in ZnO-based metal-semiconductor-metal (MSM) planar photodetector devices based on time-resolved surface band bending. Surface band bending decreases during illumination, due to migration of photogenerated holes to the surface. Immediately after turning off illumination, conduction-band electrons must overcome a relatively low energy barrier to recombine with photogenerated holes at the surface; however, with increasing time, the adsorption of oxygen at the surface or electron trapping in the depletion region increases band bending, resulting in an increased bulk/surface energy barrier that slows the transport of photogenerated electrons. We present a complex rate equation based on thermionic transition of charge carriers to and from the surface and numerically fit this model to transient photocurrent measurements of several MSM planar ZnO photodetectors at variable temperature. Fitting parameters are found to be consistent with measured values in the literature. An understanding of the mechanism for persistent photoconductivity could lead to mitigation in future device applications.

Controlling semiconducting and insulating states of SnO2 reversibly by stress and voltage

By applying mechanical stress (by bending a flexible substrate) and an appropriate voltage, the conductance of a single-crystal SnO(2) microrod on a flexible substrate can be tuned in a reversible and nonvolatile manner. The creation and elimination of lattice defects controlled by strain and electrical healing is the origin of this novel transition. A SnO(2) microrod changes continually from its normal semiconducting state to an insulating state by bending the flexible substrate. The insulating state is maintained even after straightening the substrate. Interestingly, by applying an appropriate voltage, the defects are electrically healed and the insulating state reverts to the original semiconducting state. The structural changes in the SnO(2) microrod observed in the Raman spectra are consistent with the nonvolatile property of the transport. This flexible SnO(2) device with the reversible and nonvolatile modification of electrical properties is expected to lead to a better understanding of the mechanism of defect creation and elimination and has potential application in novel flexible strain sensors and switches.

n-ZnO/LaAlO3/p-Si heterojunction for visible-blind UV detection

A visible-blind UV photodetector (PD) using a double heterojunction of n-ZnO/LaAlO3 (LAO)/p-Si was demonstrated. Inserted LAO layers exhibit electrical insulating properties and serve as blocking layers for photoexcited electrons from p-Si to n-ZnO, leading to an enhanced rectification ratio and a visible-blind UV detectivity of the n-ZnO/LAO/p-Si PDs due to the high potential barrier between LAO and p-Si layers (~2.0 eV). These results support the use of n-ZnO/LAO/p-Si PDs in the visible-blind UV PDs in a visible-light environment.

Enhanced responsivity of photodetectors realized via impact ionization

To increase the responsivity is one of the vital issues for a photodetector. By employing ZnO as a representative material of ultraviolet photodetectors and Si as a representative material of visible photodetectors, an impact ionization process, in which additional carriers can be generated in an insulating layer at a relatively large electric field, has been employed to increase the responsivity of a semiconductor photodetector. It is found that the responsivity of the photodetectors can be enhanced by tens of times via this impact ionization process. The results reported in this paper provide a general route to enhance the responsivity of a photodetector, thus may represent a step towards high-performance photodetectors.