Room-Temperature Magnetic Order in Air-Stable Ultrathin Iron Oxide

Manual assembly of atomically thin materials into heterostructures with desirable electronic properties is an approach that holds great promise. Despite the rapid expansion of the family of ultrathin materials, stackable and stable ferro/ferri magnets that are functional at room temperature are still out of reach. We report the growth of air-stable, transferable ultrathin iron oxide crystals that exhibit magnetic order at room temperature. These crystals require no passivation and can be prepared by scalable and cost-effective chemical vapor deposition. We demonstrate that the bonding between iron oxide and its growth substrate is van der Waals-like, enabling us to remove the crystals from their growth substrate and prepare iron oxide/graphene heterostructures.

High-Temperature Ferromagnetism in an Fe3P Monolayer with a Large Magnetic Anisotropy

For the development of high-performance spintronic nanodevices, one of the most urgent and challenging tasks is the preparation of two-dimensional materials with room-temperature ferromagnetism and a large magnetic anisotropic energy (MAE). Through first-principles swarm-intelligence structural search calculations, we identify an ideal ferromagnetic Fe₃P monolayer, in which Fe atoms show a perfect Kagome lattice, leading to strong in-plane Fe-Fe coupling. The predicted Curie temperature of Fe₃P reaches ∼420 K, and its MAE is comparable to those of ferromagnetic materials, such as Fe and Fe₂Si. Moreover, the Fe₃P monolayer remains as an above room-temperature ferromagnet under biaxial strains as large as 10%. Its lattice can be retained at temperatures of ≤1000 K, exhibiting a high thermodynamic stability. All of these desirable properties make the Fe₃P monolayer a promising candidate for applications in spintronic nanodevices.

Valence mediated tunable magnetism and electronic properties by ferroelectric polarization switching in 2D FeI2/In2Se3 van der Waals heterostructures

Exploring two-dimensional (2D) materials with both ferromagnetic and ferroelectric properties is scientifically interesting and of great technical importance to numerous functionalities in nanoscale devices. In this work, we have demonstrated a strong magnetoelectric coupling that appeared in the 2D FeI₂/In₂Se₃ van der Waals heterostructure. FeI₂ layers undergo a transition from ferromagnetic to antiferromagnetic by reversing the direction of ferroelectric polarization. First-principles calculation predicts a new magnetoelectronic coupling mechanism which is completely different from the Dzyaloshinskii-Moriya (DM) effect in multiferroic materials. Because of the polarization discontinuity at the interface, the valence states of Fe ions change between +2 and +3 for two different polarization directions, leading to the magnetic interaction variation between the direct exchange and I ion mediated superexchange. Moreover, metallic 2D electron gas (2DEG) transfers from the surface of FeI₂ to In₂Se₃ when the polarization reverses, which induces the spin polarization of the heterostructure varying from 93% to 0%. Our work is the first realization of manipulation magnetism by an electric field in full 2D van der Waals heterostructures.

Electric manipulation of magnetism in bilayer van der Waals magnets

The ferromagnetism of the two dimensional (2D) Cr₂Ge₂Te₆ atomic layers with the perpendicular magnetic anisotropy and the Curie temperature 30-50 K has recently been experimentally confirmed. By performing the density-functional theory calculations, we demonstrate that the magnetic properties of bilayer Cr₂Ge₂Te₆ can be flexibly tailored, due to the effective band structure tuning by the external electric field. The electric field induces the semiconductor-metal transition and redistributes charge and spin between the two layers. Furthermore, the magnetic anisotropy energy of the bilayer Cr₂Ge₂Te₆ can be obviously enhanced by the electric field, which is helpful to stabilize the long-range ferromagnetic order. Our study about the electric manipulation of magnetism based on the band structure engineering generally exists in 2D magnetic systems and will be of great significance in low-dimensional all-electric spintronics.

Engineering the magnetic properties of PtSe2 monolayer through transition metal doping

Using first-principles calculations, we have studied the energetic feasibility and magnetic properties of transition metal (TM) doped PtSe₂ monolayers. Our study shows that TM doped PtSe₂ layers with 6.25% doping exhibit versatile spintronic behaviour depending on the nature of the dopant TM atoms. Groups IVB and VIII10 TM doped PtSe₂ layers are non magnetic semiconductors, while groups IIIB, VB, VIII8, VIII9, IB TM doped PtSe₂ layers are half-metals and finally, groups VIB, VIIB and IIB TM doped PtSe₂ layers are spin polarized semiconductors. The presence of half-metallic and magnetic semiconducting characteristics suggest that TM doped PtSe₂ layers can be considered as a new kind of dilute magnetic semiconductor and thus have the promise to be used in spintronics. By studying the magnetic interactions between two TM dopants in PtSe₂ monolayers for dopant concentration of 12.5% and dopant distance of 12.85 [Formula: see text], we have found that in particular, Fe and Ru doped PtSe₂ systems are ferromagnetic half-metal having above-room-temperature Curie point of 422 and 379.9 K, respectively. By varying the dopant distance and concentration we have shown that the magnetic interaction is strongly dependent on dopant distance and concentration. Interestingly, the Curie temperature of TM doped PtSe₂ layers is affected by the correlation effects on the TM d states and also spin-orbit coupling. We have also studied the magnetic properties of defect complex composed of one TM dopant and one Pt vacancy (TM_Pt  +  V_Pt) which shows novel magnetism.

Ferromagnetism in graphene traced to antisymmetric orbital combination of involved electronic states

Based on first principles calculations, we reveal that the origin of ferromagnetism caused by [Formula: see text] electrons in graphene with vacancies can be traced to electrons partially filling [Formula: see text]-antibonding and [Formula: see text]-nonbonding states, which are induced by the vacancies and appear near the Fermi level. Because the spatial wavefunctions of both states are composed of atomic orbitals in an antisymmetric configuration, their spin wavefunctions should be symmetric according to the electron exchange antisymmetric principle, leading to electrons partially filling these states in spin polarization. Since this [Formula: see text] state originates not from interactions between the atoms but from the unpaired [Formula: see text] orbitals due to the removal of [Formula: see text] orbitals on the minority sublattice, the [Formula: see text] state is constrained, distributed on the atoms of the majority sublattice, and decays gradually from the vacancy as  ∼[Formula: see text]. According to these characteristics, we concluded that the [Formula: see text] state plays a critical role in magnetic ordering in graphene with vacancies. If the vacancy concentration in graphene is large enough to cause the decay-length regions to overlap, constraining the [Formula: see text] orbital components as little as possible on the minority sublattice atoms in the overlap regions results in the vacancy-induced [Formula: see text] states being coherent. The coherent process in the overlap region leads to the wavefunctions in all the involved regions antisymmetrized, consequently causing ferromagnetism according to the electron exchange antisymmetric principle. This unusual mechanism concerned with the origin of [Formula: see text]-electron magnetism and magnetic ordering has never before been reported and is distinctly different from conventional mechanisms. Consequently, we can explain how such a weak magnetization with such a high critical temperature can be experimentally observed in proton-irradiated graphene.

Effect of encapsulation on electronic transport properties of nanoscale Cu(111) films

The stiff compromise between reliability and conductivity of copper interconnects used in sub-nanometer nodes has brought into focus the choice of encapsulation material. While reliability was the primary driver so far, herein, we investigate how electronic conductivity of Cu(111) thin films is influenced by the encapsulation material using density functional theory and Boltzmann transport equation. Atomically thin 2D materials, namely conducting graphene and insulating graphane both retain the conductivity of Cu films whereas partially hydrogenated graphene (HGr) results in reduction of surface density of states and a reduction in Cu film conductivity. Among transition metal elements, we find that atoms in Co encapsulation layer, which essentially act as magnetic impurities, serve as electron scattering centres resulting in a decrease in conductivity by at least 15% for 11 nm thick Cu film. On the other hand, Mo, Ta, and Ru have more favorable effect on conductivity when compared to Co. The cause of decrease in conductivity for Co and HGr is discussed by investigating the electronic band structure and density of states. Our DFT calculations suggest that pristine graphene sheet is a good encapsulation material for advanced Cu interconnects both from chemical protection and conductivity point of view.

Hydrogen interaction with graphene on Ir(1 1 1): a combined intercalation and functionalization study

We demonstrate a procedure for obtaining a H-intercalated graphene layer that is found to be chemically decoupled from the underlying metal substrate. Using high-resolution x-ray photoelectron spectroscopy and scanning tunneling microscopy techniques, we reveal that the hydrogen intercalated graphene is p-doped by about 0.28 eV, but also identify structures of interfacial hydrogen. Furthermore, we investigate the reactivity of the decoupled layer towards atomic hydrogen and vibrationally excited molecular hydrogen and compare these results to the case of non-intercalated graphene. We find distinct differences between the two. Finally, we discuss the possibility to form graphane clusters on an iridium substrate by combined intercalation and H atom exposure experiments.

Dual-Route Hydrogenation of the Graphene/Ni Interface

Nanostructured architectures based on graphene/metal interfaces might be efficiently exploited in hydrogen storage due to the attractive capability to provide adsorption sites both at the top side of graphene and at the metal substrate after intercalation. We combined in situ high-resolution X-ray photoelectron spectroscopy and scanning tunneling microscopy with theoretical calculations to determine the arrangement of hydrogen atoms at the graphene/Ni(111) interface at room temperature. Our results show that at low coverage H atoms predominantly adsorb as monomers and that chemisorption saturates when ∼25% of the surface is hydrogenated. In parallel, with a much lower rate, H atoms intercalate below graphene and bind to Ni surface sites. Intercalation progressively destabilizes the C-H bonds and triggers the release of the hydrogen chemisorbed on graphene. Valence band and near-edge absorption spectroscopy demonstrate that the graphene layer is fully lifted when the Ni surface is saturated with H. Thermal programmed desorption was used to determine the stability of the hydrogenated interface. Whereas the H atoms chemisorbed on graphene remain unperturbed over a wide temperature range, the intercalated phase abruptly desorbs 50-100 K above room temperature.

Engineering Point-Defect States in Monolayer WSe2

Defect engineering is a key approach for tailoring the properties of the emerging two-dimensional semiconductors. Here, we report an atomic engineering of the W vacancy in monolayer WSe₂ by single potassium atom decoration. The K decoration alters the energy states and reshapes the wave function such that previously hidden midgap states become visible with well-resolved multiplets in scanning tunneling spectroscopy. Their energy levels are in good agreement with first-principle calculations. More interestingly, the calculations show that an unpaired electron donated by the K atom can lead to a local magnetic moment, exhibiting an on-off switching by the odd-even number of electron filling. Experimentally the Fermi level is pinned above all defect states due to the graphite substrate, corresponding to an off state. The close agreement between theory and experiment in the off state, on the other hand, suggests the possibility of gate-programmable magnetic moments at the defects.

Two-dimensional magnetic crystals and emergent heterostructure devices

Magnetism, originating from the moving charges and spin of elementary particles, has revolutionized important technologies such as data storage and biomedical imaging, and continues to bring forth new phenomena in emergent materials and reduced dimensions. The recently discovered two-dimensional (2D) magnetic van der Waals crystals provide ideal platforms for understanding 2D magnetism, the control of which has been fueling opportunities for atomically thin, flexible magneto-optic and magnetoelectric devices (such as magnetoresistive memories and spin field-effect transistors). The seamless integration of 2D magnets with dissimilar electronic and photonic materials opens up exciting possibilities for unprecedented properties and functionalities. We review the progress in this area and identify the possible directions for device applications, which may lead to advances in spintronics, sensors, and computing.

Single spin localization and manipulation in graphene open-shell nanostructures

Turning graphene magnetic is a promising challenge to make it an active material for spintronics. Predictions state that graphene structures with specific shapes can spontaneously develop magnetism driven by Coulomb repulsion of π-electrons, but its experimental verification is demanding. Here, we report on the observation and manipulation of individual magnetic moments in graphene open-shell nanostructures on a gold surface. Using scanning tunneling spectroscopy, we detect the presence of single electron spins localized around certain zigzag sites of the carbon backbone via the Kondo effect. We find near-by spins coupled into a singlet ground state and quantify their exchange interaction via singlet-triplet inelastic electron excitations. Theoretical simulations picture how electron correlations result in spin-polarized radical states with the experimentally observed spatial distributions. Extra hydrogen atoms bound to radical sites quench their magnetic moment and switch the spin of the nanostructure in half-integer amounts. Our work demonstrates the intrinsic π-paramagnetism of graphene nanostructures.

Tuning the magnetic properties of graphene derivatives by functional group selection

The recent discovery of hydroxofluorographene G(OH)F, a graphene derivative showing room temperature antiferromagnetic ordering, suggests that there may be other sp-materials based on sp³-functionalized graphene that exhibit magnetic ordering and whose properties can be controlled by selecting suitable functional groups.

Proximity effects in graphene and ferromagnetic CrBr3 van der Waals heterostructures

Schematic of the magnetic proximity effect in a van der Waals heterostructure formed by a graphene monolayer, induced by its interaction with a two-dimensional ferromagnet (CrBr₃) for designing a single-gate field effect transistor.

Zigzag sp2 Carbon Chains Passing through an sp3 Framework: A Driving Force toward Room-Temperature Ferromagnetic Graphene

Stabilization of ferromagnetic ordering in graphene-based systems up to room temperature remains an important challenge owing to the huge scope for applications in electronics, spintronics, biomedicine, and separation technologies. To date, several strategies have been proposed, including edge engineering, introduction of defects and dopants, and covalent functionalization. However, these techniques are usually hampered by limited temperature sustainability of ferromagnetic ordering. Here, we describe a method for the well-controlled sp³ functionalization of graphene to synthesize zigzag conjugated sp² carbon chains that can act as communication pathways among radical motifs. Zigzag sp²/sp³ patterns in the basal plane were clearly observed by high-resolution scanning transmission electron microscopy and provided a suitable matrix for stabilization of ferromagnetic ordering up to room temperature due to combined contributions of itinerant π-electrons and superexchange interactions. The results highlight the principal role of sp²/sp³ ratio and superorganization of radical motifs in graphene for generating room-temperature nonmetallic magnets.

Screening Magnetic Two-Dimensional Atomic Crystals with Nontrivial Electronic Topology

To date, only a few two-dimensional (2D) magnetic crystals have been experimentally confirmed, such as CrI₃ and CrGeTe₃, all with very low Curie temperatures ( T_C). High-throughput first-principles screening over a large set of materials yields 89 magnetic monolayers including 56 ferromagnetic (FM) and 33 antiferromagnetic compounds. Among them, 24 FM monolayers are promising candidates possessing T_C higher than that of CrI₃. High T_C monolayers with fascinating electronic phases are identified: (i) quantum anomalous Hall and valley Hall effects coexist in a single material RuCl₃ or VCl₃, leading to a valley-polarized quantum anomalous Hall state; (ii) TiBr₃, Co₂NiO₆, and V₂H₃O₅ are revealed to be half-metals. More importantly, a new type of fermion dubbed type-II Weyl ring is discovered in ScCl. Our work provides a database of 2D magnetic materials, which could guide experimental realization of high-temperature magnetic monolayers with exotic electronic states for future spintronics and quantum computing applications.

Symmetry Breaking and Lattice Kirigami

We consider an interacting quantum field theory on a curved two-dimensional manifold that we construct by geometrically deforming a flat hexagonal lattice by the insertion of a defect. Depending on how the deformation is done, the resulting geometry acquires a locally nonvanishing curvature that can be either positive or negative. Fields propagating on this background are forced to satisfy boundary conditions modulated by the geometry and that can be assimilated by a nondynamical gauge field. We present an explicit example where curvature and boundary conditions compete in altering the way symmetry breaking takes place, resulting in a surprising behavior of the order parameter in the vicinity of the defect. The effect described here is expected to be generic and of relevance in a variety of situations.

Spin signatures in the electrical response of graphene nanogaps

We analyse the electrical response of narrow graphene nanogaps in search for transport signatures stemming from spin-polarized edge states. We find that the electrical transport across graphene nanogaps having perfectly defined zigzag edges does not carry any spin-related signature. We also analyse the magnetic and electrical properties of nanogaps whose electrodes have wedges that possibly occur in the currently fabricated nanogaps. These wedges can host spin polarized wedge low-energy states due to the bipartite nature of the graphene lattice. We find that these spin-polarized low-energy modes give rise to low-voltage signatures in the differential conductance and to distinctive features in the stability diagrams. These are caused by fully spin-polarized currents.

Transport Spectroscopy of Sublattice-Resolved Resonant Scattering in Hydrogen-Doped Bilayer Graphene

We report the experimental observation of sublattice-resolved resonant scattering in bilayer graphene by performing simultaneous cryogenic atomic hydrogen doping and electron transport measurements in an ultrahigh vacuum. This allows us to monitor the hydrogen adsorption on the different sublattices of bilayer graphene without atomic-scale microscopy. Specifically, we detect two distinct resonant scattering peaks in the gate-dependent resistance, which evolve as a function of the atomic hydrogen dosage. Theoretical calculations show that one of the peaks originates from resonant scattering by hydrogen adatoms on the α sublattice (dimer site) while the other originates from hydrogen adatoms on the β sublattice (nondimer site), thereby enabling a method for characterizing the relative sublattice occupancy via transport measurements. Utilizing this new capability, we investigate the adsorption and thermal desorption of hydrogen adatoms via controlled annealing and conclude that hydrogen adsorption on the β sublattice is energetically favored. Through site-selective desorption from the α sublattice, we realize hydrogen doping with adatoms primarily on a single sublattice, which is highly desired for generating ferromagnetism.

Robust ferromagnetism in hydrogenated graphene mediated by spin-polarized pseudospin

The origin of the ferromagnetism in metal-free graphitic materials has been a decade-old puzzle. The possibility of long-range magnetic order in graphene has been recently questioned by the experimental findings that point defects in graphene, such as fluorine adatoms and vacancies, lead to defect-induced paramagnetism but no magnetic ordering down to 2 K. It remains controversial whether collective magnetic order in graphene can emerge from point defects at finite temperatures. This work provides a new framework for understanding the ferromagnetism in hydrogenated graphene, highlighting the key contribution of the spin-polarized pseudospin as a “mediator” of long-range magnetic interactions in graphene. Using first-principles calculations of hydrogenated graphene, we found that the unique ‘zero-energy’ position of H-induced quasilocalized states enables notable spin polarization of the graphene’s sublattice pseudospin. The pseudospin-mediated magnetic interactions between the H-induced magnetic moments stabilize the two-dimensional ferromagnetic ordering with Curie temperatures of T_c = n_H × 34,000 K for the atom percentage n_H of H adatoms. These findings show that atomic-scale control of hydrogen adsorption on graphene can give rise to a robust magnetic order.

Locally Induced Spin States on Graphene by Chemical Attachment of Boron Atoms

Pristine graphene is known to be nonmagnetic due to its π-conjugated electron system. However, we find that localized magnetic moments can be generated by chemically attaching boron atoms to the graphene sheets. Such spin-polarized states are evidenced by the spin-split of the density of states (DOS) peaks near the Fermi level in scanning tunneling spectroscopy (STS). In the vicinity of several coadsorbed boron atoms, the Coulomb repulsion between multiple spins leads to antiferromagnetic coupling for the induced spin states in the graphene lattice, manifesting itself as an increment of spin-down state at specific regions. Experimental observations and interpretations are rationalized by extensive density functional theory (DFT) simulations.

Transition-Metal Dihydride Monolayers: A New Family of Two-Dimensional Ferromagnetic Materials with Intrinsic Room-Temperature Half-Metallicity

Two-dimensional (2D) ferromagnetic materials with intrinsic half-metallicity are highly desirable for nanoscale spintronic applications. Here, we predict a new and stable family of 2D transition-metal dihydride (MH₂; M = Sc, Ti, V, Cr, Fe, Co, Ni) monolayers with novel properties. Our density functional theory computation shows that CoH₂ and ScH₂ monolayers are ferromagnetic metals, while the others are antiferromagnetic semiconductors. In particular, the CoH₂ monolayer is a perfect half-metal with a wide spin gap of 3.48 eV. The ScH₂ monolayer can also possess half-metallicity through hole doping. Most importantly, our Monte Carlo simulations show that the CoH₂ monolayer possesses an above-room-temperature Curie point (339 K), while that of the ScH₂ monolayer can also reach 160 K. A synthetic approach is proposed to realize CoH₂ and ScH₂ monolayers in the laboratory. Notably, their half-metallicity can be well maintained on substrates. The new family of MH₂ monolayers are promising functional materials for spintronic applications due to their novel magnetic properties.

Fabrication of Millimeter-Scale, Single-Crystal One-Third-Hydrogenated Graphene with Anisotropic Electronic Properties

Periodically hydrogenated graphene is predicted to form new kinds of crystalline 2D materials such as graphane, graphone, and 2D C_x H_y , which exhibit unique electronic properties. Controlled synthesis of periodically hydrogenated graphene is needed for fundamental research and possible electronic applications. Only small patches of such materials have been grown so far, while the experimental fabrication of large-scale, periodically hydrogenated graphene has remained challenging. In the present work, large-scale, periodically hydrogenated graphene is fabricated on Ru(0001). The as-fabricated hydrogenated graphene is highly ordered, with a √3 × √3/R30° period relative to the pristine graphene. As the ratio of hydrogen and carbon is 1:3, the periodically hydrogenated graphene is named "one-third-hydrogenated graphene" (OTHG). The area of OTHG is up to 16 mm² . Density functional theory calculations demonstrate that the OTHG has two deformed Dirac cones along one high-symmetry direction and a finite energy gap along the other directions at the Fermi energy, indicating strong anisotropic electrical properties. An efficient method is thus provided to produce large-scale crystalline functionalized graphene with specially desired properties.

Collective resonances near zero energy induced by a point defect in bilayer graphene

Intrinsic defects give rise to scattering processes governing the transport properties of mesoscopic systems. We investigate analytically and numerically the local density of states in Bernal stacking bilayer graphene with a point defect. With Bernal stacking structure, there are two types of lattice sites. One corresponds to connected sites, where carbon atoms from each layer stack on top of each other, and the other corresponds to disconnected sites. From our theoretical study, a picture emerges in which the pronounced zero-energy peak in the local density of states does not attribute to zero-energy impurity states associated to two different types of defects but to a collective phenomenon of the low-energy resonant states induced by the defect. To corroborate this description, we numerically show that at small system size N, where N is the number of unit cells, the zero-energy peak near the defect scales as 1/lnN for the quasi-localized zero-energy state and as 1/N for the delocalized zero-energy state. As the system size approaches to the thermodynamic limit, the former zero-energy peak becomes a power-law singularity 1/|E| in low energies, while the latter is broadened into a Lorentzian shape. A striking point is that both types of zero-energy peaks decay as 1/r² away from the defect, manifesting the quasi-localized character. Based on our results, we propose a general formula for the local density of states in low-energy and in real space. Our study sheds light on this fundamental problem of defects.

Sticking of atomic hydrogen on graphene

Recent years have witnessed an ever growing interest in the interactions between hydrogen atoms and a graphene sheet. Largely motivated by the possibility of modulating the electric, optical and magnetic properties of graphene, a huge number of studies have appeared recently that added to and enlarged earlier investigations on graphite and other carbon materials. In this review we give a glimpse of the many facets of this adsorption process, as they emerged from these studies. The focus is on those issues that have been addressed in detail, under carefully controlled conditions, with an emphasis on the interplay between the adatom structures, their formation dynamics and the electric, magnetic and chemical properties of the carbon sheet.

Two-dimensional Au-1,3,5 triethynylbenzene organometallic lattice: Structure, half-metallicity, and gas sensing

On the basis of first-principles calculations, we investigated the structural and electronic properties of the two-dimensional (2D) Au-1,3,5 triethynylbenzene (Au-TEB) framework, which has been recently synthesized by homocoupling reactions in experiments. Featured by the C-Au-C linkage, the 2D Au-TEB network has a kagome lattice by Au atoms and a hexagonal lattice by organic molecules within the same metal-organic framework (MOF), which exhibits intrinsic half-metallicity with one spin channel metallic and the other spin channel fully insulating with a large energy gap of 2.8 eV. Two branches of kagome bands are located near the Fermi level, with each branch including one flat band and two Dirac bands, which originates from the out-of-plane d_xz and d_yz orbitals of Au and may lead to many exotic topological quantum phases. We further studied the adsorption of F atoms, Cl atoms, and small gas molecules including O₂, CO, NO₂, and NH₃ on the Au-TEB network, aiming to exploit its potential applications in gas sensors. Detailed analyses on adsorption geometry, energy, molecular orbital interaction, and electronic structure modification suggest the great potential of Au-TEP as a promising alternative for gas sensing. We expect these results to expand the universe of low-dimensional half-metallic MOF structures and shed new light on their practical applications in nanoelectronics/spintronics.

Understanding the non-covalent interaction mediated modulations on the electronic structure of quasi-zero-dimensional graphene nanoflakes

In recent years, magnetic or electric field induced modulations on the electronic environment of single molecular systems are common practice. In this particular study, we have instigated the possibility of controlling the electronic and spin-dependent properties of hydrogen-terminated graphene fragments, so-called graphene nanoflakes (GNF), using weak non-covalent interactions as the external stimuli. The topological frustration in the graphene fragment appreciated the compelling electronic behavior of the system. This leads to some unorthodox spin-distribution in the system and it is possible to synchronize this electronic perturbation switching through a non-covalent interaction. These findings institute a new avenue for sculpting such donor-acceptor composites as self-regulated spintronic devices in next generation electronics.

van der Waals Metallic Transition Metal Dichalcogenides

Transition metal dichalcogenides are layered materials which are composed of transition metals and chalcogens of the group VIA in a 1:2 ratio. These layered materials have been extensively investigated over synthesis and optical and electrical properties for several decades. It can be insulators, semiconductors, or metals revealing all types of condensed matter properties from a magnetic lattice distorted to superconducting characteristics. Some of these also feature the topological manner. Instead of covering the semiconducting properties of transition metal dichalcogenides, which have been extensively revisited and reviewed elsewhere, here we present the structures of metallic transition metal dichalcogenides and their synthetic approaches for not only high-quality wafer-scale samples using conventional methods (e.g., chemical vapor transport, chemical vapor deposition) but also local small areas by a modification of the materials using Li intercalation, electron beam irradiation, light illumination, pressures, and strains. Some representative band structures of metallic transition metal dichalcogenides and their strong layer-dependence are reviewed and updated, both in theoretical calculations and experiments. In addition, we discuss the physical properties of metallic transition metal dichalcogenides such as periodic lattice distortion, magnetoresistance, superconductivity, topological insulator, and Weyl semimetal. Approaches to overcome current challenges related to these materials are also proposed.

High-Temperature Magnetism in Graphene Induced by Proximity to EuO

Addition of magnetism to spectacular properties of graphene may lead to novel topological states and design of spin logic devices enjoying low power consumption. A significant progress is made in defect-induced magnetism in graphene-selective elimination of p _z orbitals (by vacancies or adatoms) at triangular sublattices tailors graphene magnetism. Proximity to a magnetic insulator is a less invasive way, which is being actively explored now. Integration of graphene with the ferromagnetic semiconductor EuO has much to offer, especially in terms of proximity-induced spin-orbit interactions. Here, we synthesize films of EuO on graphene using reactive molecular beam epitaxy. Their quality is attested by electron and X-ray diffraction, cross-sectional electron microscopy, and Raman and magnetization measurements. Studies of electron transport reveal a magnetic transition at T_C^* ≈ 220 K, well above the Curie temperature 69 K of EuO. Up to T_C^*, the dependence R _xy( B) is strongly nonlinear, suggesting the presence of the anomalous Hall effect. The role of synthesis conditions is highlighted by studies of an overdoped structure. The results justify the use of the EuO/graphene system in spintronics.

Emerging chemical strategies for imprinting magnetism in graphene and related 2D materials for spintronic and biomedical applications

Graphene, a single two-dimensional sheet of carbon atoms with an arrangement mimicking the honeycomb hexagonal architecture, has captured immense interest of the scientific community since its isolation in 2004. Besides its extraordinarily high electrical conductivity and surface area, graphene shows a long spin lifetime and limited hyperfine interactions, which favors its potential exploitation in spintronic and biomedical applications, provided it can be made magnetic. However, pristine graphene is diamagnetic in nature due to solely sp2 hybridization. Thus, various attempts have been proposed to imprint magnetic features into graphene. The present review focuses on a systematic classification and physicochemical description of approaches leading to equip graphene with magnetic properties. These include introduction of point and line defects into graphene lattices, spatial confinement and edge engineering, doping of graphene lattice with foreign atoms, and sp3 functionalization. Each magnetism-imprinting strategy is discussed in detail including identification of roles of various internal and external parameters in the induced magnetic regimes, with assessment of their robustness. Moreover, emergence of magnetism in graphene analogues and related 2D materials such as transition metal dichalcogenides, metal halides, metal dinitrides, MXenes, hexagonal boron nitride, and other organic compounds is also reviewed. Since the magnetic features of graphene can be readily masked by the presence of magnetic residues from synthesis itself or sample handling, the issue of magnetic impurities and correct data interpretations is also addressed. Finally, current problems and challenges in magnetism of graphene and related 2D materials and future potential applications are also highlighted.

Modelling of adsorption and intercalation of hydrogen on/into tungsten disulphide multilayers and multiwall nanotubes

Understanding the interaction of hydrogen with layered materials is crucial in the fields of sensors, catalysis, fuel cells and hydrogen storage, among others. Density functional theory, improved by the introduction of van der Waals dispersion forces, provides an efficient and practical workbench to investigate the interaction of molecular and atomic hydrogen with WS2 multilayers and nanotubes. We find that H2 physisorbs on the surface of those materials on top of W atoms, while atomic H chemisorbs on top of S atoms. In the case of nanotubes, the chemisorption strength is sensitive to the nanotube diameter. Diffusion of H2 on the surface of WS2 encounters quite small activation barriers whose magnitude helps to explain previous and new experimental results for the observed dependence of the hydrogen concentration with temperature. Intercalation of H2 between adjacent planar WS2 layers reveals an endothermic character. Intercalating H atoms is energetically favorable, but the intercalation energy does not compensate for the cost of dissociating the molecules. When H2 molecules are intercalated between the walls of a double wall nanotube, the rigid confinement induces the dissociation of the confined molecules. A remarkable result is that the presence of a full H2 monolayer adsorbed on top of the first WS2 layer of a WS2 multilayer system strongly facilitates the intercalation of H2 between WS2 layers underneath. This opens up an additional gate to intercalation processes.

Emerging two-dimensional ferromagnetism in silicene materials

The appeal of ultra-compact spintronics drives intense research on magnetism in low-dimensional materials. Recent years have witnessed remarkable progress in engineering two-dimensional (2D) magnetism via defects, edges, adatoms, and magnetic proximity. However, intrinsic 2D ferromagnetism remained elusive until recent discovery of out-of-plane magneto-optical response in Cr-based layers, stimulating the search for 2D magnets with tunable and diverse properties. Here we employ a bottom-up approach to produce layered structures of silicene (a Si counterpart of graphene) functionalized by rare-earth atoms, ranging from the bulk down to one monolayer. We track the evolution from the antiferromagnetism of the bulk to intrinsic 2D in-plane ferromagnetism of ultrathin layers, with its characteristic dependence of the transition temperature on low magnetic fields. The emerging ferromagnetism manifests itself in the electron transport. The discovery of a class of robust 2D magnets, compatible with the mature Si technology, is instrumental for engineering new devices and understanding spin phenomena.

Universal Effectiveness of Inducing Magnetic Moments in Graphene by Amino-Type sp³-Defects

Inducing magnetic moments in graphene is very important for its potential application in spintronics. Introducing sp³-defects on the graphene basal plane is deemed as the most promising approach to produce magnetic graphene. However, its universal validity has not been very well verified experimentally. By functionalization of approximately pure amino groups on graphene basal plane, a spin-generalization efficiency of ~1 μ_B/100 NH₂ was obtained for the first time, thus providing substantial evidence for the validity of inducing magnetic moments by sp³-defects. As well, amino groups provide another potential sp³-type candidate to prepare magnetic graphene.

Epitaxially grown monolayer VSe2: an air-stable magnetic two-dimensional material with low work function at edges

Recent experimental breakthroughs open up new opportunities for magnetism in few-atomic-layer two-dimensional (2D) materials, which makes fabrication of new magnetic 2D materials a fascinating issue. Here, we report the growth of monolayer VSe₂ by molecular beam epitaxy (MBE) method. Electronic properties measurements by scanning tunneling spectroscopy (STS) method revealed that the as-grown monolayer VSe₂ has magnetic characteristic peaks in its electronic density of states and a lower work-function at its edges. Moreover, air exposure experiments show air-stability of the monolayer VSe₂. This high-quality monolayer VSe₂, a very air-inert 2D material with magnetism and low edge work function, is promising for applications in developing next-generation low power-consumption, high efficiency spintronic devices and new electrocatalysts.

Inducing and manipulating magnetization in 2D zinc-oxide by strain and external voltage

Two-dimensional (2D) structures that exhibit intriguing magnetic phenomena such as perpendicular magnetic anisotropy and its switchable feature are of great interests in spintronics research. Herein, the density functional theory studies reveal the critical impacts of strain and external gating on vacancy-induced magnetism and its spin direction in a graphene-like single layer of zinc oxide (ZnO). In contrast to the pristine and defective ZnO with an O-vacancy, the presence of a Zn-vacancy induces significant magnetic moments to its first neighboring O and Zn atoms due to the charge deficit. We further predict that the direction of magnetization easy axis reverses from an in-plane to perpendicular orientation under a practically achievable biaxial compressive strain of only ~1-2% or applying an electric field by means of the charge density modulation. This magnetization reversal is mainly driven by the strain- and electric-field-induced changes in the spin-orbit coupled d states of the first-neighbor Zn atom to a Zn-vacancy. These findings open interesting prospects for exploiting strain and electric field engineering to manipulate magnetism and magnetization orientation of 2D materials.

Temperature-tuned ferromagnetism in hydrogenated multilayer graphene

Improving the ferromagnetism properties of pure carbon-based materials is extremely important for their application in spintronics. Hydrogenation of graphene is an effective way to induce magnetic moment into graphene with the advantage of reversibility. However, little experimental work has been done to prove the effect of hydrogen on the magnetic properties of graphene so far, except for systems containing a large amount of oxygen or plasma-induced vacancy which complicated the magnetic origin. Here we report a facile electrochemical cathodic method to generate hydrogenated multilayer graphene or few-layer graphite using graphite powder as the raw material, and observed hydrogen-induced ferromagnetism in samples annealed at different temperatures. The observed results suggest that ferromagnetism of hydrogenated multilayer graphene can be tuned by high temperature treatment, which is attributed to a changeable relative amount of hydrogen atoms chemisorpted on two different sublattices during thermal treatment.

Strong room-temperature ferromagnetism in VSe2 monolayers on van der Waals substrates

Reduced dimensionality and interlayer coupling in van der Waals materials gives rise to fundamentally different electronic ¹ , optical ² and many-body quantum^3-5 properties in monolayers compared with the bulk. This layer-dependence permits the discovery of novel material properties in the monolayer regime. Ferromagnetic order in two-dimensional materials is a coveted property that would allow fundamental studies of spin behaviour in low dimensions and enable new spintronics applications^6-8. Recent studies have shown that for the bulk-ferromagnetic layered materials CrI₃ (ref. ⁹ ) and Cr₂Ge₂Te₆ (ref. ¹⁰ ), ferromagnetic order is maintained down to the ultrathin limit at low temperatures. Contrary to these observations, we report the emergence of strong ferromagnetic ordering for monolayer VSe₂, a material that is paramagnetic in the bulk^11,12. Importantly, the ferromagnetic ordering with a large magnetic moment persists to above room temperature, making VSe₂ an attractive material for van der Waals spintronics applications.

Imaging resonant dissipation from individual atomic defects in graphene

Conversion of electric current into heat involves microscopic processes that operate on nanometer length scales and release minute amounts of power. Although central to our understanding of the electrical properties of materials, individual mediators of energy dissipation have so far eluded direct observation. Using scanning nanothermometry with submicrokelvin sensitivity, we visualized and controlled phonon emission from individual atomic-scale defects in graphene. The inferred electron-phonon "cooling power spectrum" exhibits sharp peaks when the Fermi level comes into resonance with electronic quasi-bound states at such defects. Rare in the bulk but abundant at graphene's edges, switchable atomic-scale phonon emitters provide the dominant dissipation mechanism. Our work offers insights for addressing key materials challenges in modern electronics and enables control of dissipation at the nanoscale.

Magneto-Spin-Orbit Graphene: Interplay between Exchange and Spin-Orbit Couplings

A rich class of spintronics-relevant phenomena require implementation of robust magnetism and/or strong spin-orbit coupling (SOC) to graphene, but both properties are completely alien to it. Here, we for the first time experimentally demonstrate that a quasi-freestanding character, strong exchange splitting and giant SOC are perfectly achievable in graphene at once. Using angle- and spin-resolved photoemission spectroscopy, we show that the Dirac state in the Au-intercalated graphene on Co(0001) experiences giant splitting (up to 0.2 eV) while being by no means distorted due to interaction with the substrate. Our calculations, based on the density functional theory, reveal the splitting to stem from the combined action of the Co thin film in-plane exchange field and Au-induced Rashba SOC. Scanning tunneling microscopy data suggest that the peculiar reconstruction of the Au/Co(0001) interface is responsible for the exchange field transfer to graphene. The realization of this "magneto-spin-orbit" version of graphene opens new frontiers for both applied and fundamental studies using its unusual electronic bandstructure.

Exciting H2 Molecules for Graphene Functionalization

Hydrogen functionalization of graphene by exposure to vibrationally excited H₂ molecules is investigated by combined scanning tunneling microscopy, high-resolution electron energy loss spectroscopy, X-ray photoelectron spectroscopy measurements, and density functional theory calculations. The measurements reveal that vibrationally excited H₂ molecules dissociatively adsorb on graphene on Ir(111) resulting in nanopatterned hydrogen functionalization structures. Calculations demonstrate that the presence of the Ir surface below the graphene lowers the H₂ dissociative adsorption barrier and allows for the adsorption reaction at energies well below the dissociation threshold of the H-H bond. The first reacting H₂ molecule must contain considerable vibrational energy to overcome the dissociative adsorption barrier. However, this initial adsorption further activates the surface resulting in reduced barriers for dissociative adsorption of subsequent H₂ molecules. This enables functionalization by H₂ molecules with lower vibrational energy, yielding an avalanche effect for the hydrogenation reaction. These results provide an example of a catalytically active graphene-coated surface and additionally set the stage for a re-interpretation of previous experimental work involving elevated H₂ background gas pressures in the presence of hot filaments.

Novel Synthesis of Slightly Fluorinated Graphene Quantum Dots with Luminescent and Paramagnetic Properties through Thermal Cutting of Fluorinated Graphene

A novel approach has been developed to synthesize slightly fluorinated graphene quantum dots (GQDs-F) through thermal cutting of highly fluorinated graphene. The fluorinated graphene with substantial structure defects is fragile and is readily attacked. The direct evaporation of abundant CFn (n = 2, 3) groups near structure defects lead to the loss of adjacent skelton C atoms, and the fluorinated graphene can be thermally cut into GQDs-F with a relatively uniform nanosize in pyrolysis at 810 K. The GQDs-F with a low F/C atomic ratio of ca. 0.03 exhibit excitation wavelength-dependent properties with multicolor photoluminescence (PL) from blue to green. At the same time, F adatoms that are most likely located at the edges of GQDs-F have a high efficiency of introducing paramagnetic centres, and GQDs-F show a strong paramagnetism because of sp³-type defects and magnetic zigzag edges. The graphene quantum dots with such multimodal capabilities should have great applied value in material science.

Spin transport in graphene/transition metal dichalcogenide heterostructures

This review summarizes the theoretical and experimental studies of spin transport in graphene interfaced with transition metal dichalcogenides, and assesses its potential for future spintronic applications.

Dilute antiferromagnetism in magnetically doped phosphorene

We study the competition between Kondo physics and indirect exchange on monolayer black phos-phorous using a realistic description of the band structure in combination with the density matrixrenormalization group (DMRG) method. The Hamiltonian is reduced to a one-dimensional problemvia an exact canonical transformation that makes it amenable to DMRG calculations, yielding exactresults that fully incorporate the many-body physics. We find that a perturbative description of theproblem is not appropriate and cannot account for the slow decay of the correlations and the completelack of ferromagnetism. In addition, at some particular distances, the impurities decouple formingtheir own independent Kondo states. This can be predicted from the nodes of the Lindhard function.Our results indicate a possible route toward realizing dilute anti-ferromagnetism in phosphorene. Received: 19 September 2017,  Accepted: 12 October 2017; Edited by: K. Hallberg; DOI: http://dx.doi.org/10.4279/PIP.090008 Cite as: A Allerdt, A E Feiguin, Papers in Physics 9, 090008 (2017) This paper, by A Allerdt, A E Feiguin, is licensed under the Creative Commons Attribution License 3.0.  

van der Waals Layered Materials: Opportunities and Challenges

Since graphene became available by a scotch tape technique, a vast class of two-dimensional (2D) van der Waals (vdW) layered materials has been researched intensively. What is more intriguing is that the well-known physics and chemistry of three-dimensional (3D) bulk materials are often irrelevant, revealing exotic phenomena in 2D vdW materials. By further constructing heterostructures of these materials in the planar and vertical directions, which can be easily achieved via simple exfoliation techniques, numerous quantum mechanical devices have been demonstrated for fundamental research and technological applications. It is, therefore, necessary to review the special features in 2D vdW materials and to discuss the remaining issues and challenges. Here, we review the vdW materials library, technology relevance, and specialties of vdW materials covering the vdW interaction, strong Coulomb interaction, layer dependence, dielectric screening engineering, work function modulation, phase engineering, heterostructures, stability, growth issues, and the remaining challenges.

Reduced graphene oxide-germanium quantum dot nanocomposite: electronic, optical and magnetic properties

Graphene provides numerous possibilities for structural modification and functionalization of its carbon backbone. Localized magnetic moments can, as well, be induced in graphene by the formation of structural defects which include vacancies, edges, and adatoms. In this work, graphene was functionalized using germanium atoms, we report the effect of the Ge ad atoms on the structural, electrical, optical and magnetic properties of graphene. Reduced graphene oxide (rGO)-germanium quantum dot nanocomposites of high crystalline quality were synthesized by the microwave-assisted solvothermal reaction. Highly crystalline spherical shaped germanium quantum dots, of diameter ranging between 1.6-9.0 nm, are anchored on the basal planes of rGO. The nanocomposites exhibit high electrical conductivity with a sheet resistance of up to 16 Ω sq^-1. The electrical conductivity is observed to increase with the increase in Ge content in the nanocomposites. High defect-induced magnetization is attained in the composites via germanium adatoms. The evolution of the magnetic moments in the nanocomposites and the coercivity showed marked dependence on the Ge quantum dots size and concentration. Quantum confinement effects is evidenced in the UV-vis absorbance spectra and photoluminescence emission spectra of the nanocomposites which show marked size-dependence. The composites manifest strong absorption in the UV region, strong luminescence in the near UV region, and a moderate luminescence in the visible region.

Isolation and Characterization of Few-Layer Manganese Thiophosphite

This work reports an experimental study on an antiferromagnetic honeycomb lattice of MnPS₃ that couples the valley degree of freedom to a macroscopic antiferromagnetic order. The crystal structure of MnPS₃ is identified by high-resolution scanning transmission electron microscopy. Layer-dependent angle-resolved polarized Raman fingerprints of the MnPS₃ crystal are obtained, and the Raman peak at 383 cm^-1 exhibits 100% polarity. Temperature dependences of anisotropic magnetic susceptibility of the MnPS₃ crystal are measured in a superconducting quantum interference device. Anisotropic behaviors of the magnetic moment are explored on the basis of the mean field approximation model. Ambipolar electronic conducting channels in MnPS₃ are realized by the liquid gating technique. The conducting channel of MnPS₃ offers a platform for exploring the spin/valleytronics and magnetic orders in 2D limitation.

Monovacancy paramagnetism in neutron-irradiated graphite probed by 13C NMR

We report on the magnetic properties of monovacancy defects in neutron-irradiated graphite, probed by ¹³C nuclear magnetic resonance spectroscopy. The bulk paramagnetism of the defect moments is revealed by the temperature dependence of the NMR frequency shift and spectral linewidth, both of which follow a Curie behavior, in agreement with measurements of the macroscopic magnetization. Compared to pristine graphite, the fluctuating hyperfine fields generated by the defect moments lead to an enhancement of the ¹³C nuclear spin-lattice relaxation rate [Formula: see text] by about two orders of magnitude. With an applied magnetic field of 7.1 T, the temperature dependence of [Formula: see text] below about 10 K can well be described by a thermally activated form, [Formula: see text], yielding a singular Zeeman energy of ([Formula: see text]) meV, in excellent agreement with the sole presence of polarized, non-interacting defect moments.