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Matkivskyi V, Leiviskä O, Wenner S, Liu H, Vähänissi V, Savin H, Di Sabatino M, Tranell G. Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications-Effects of Precursor and Operating Conditions. MATERIALS (BASEL, SWITZERLAND) 2023; 16:5522. [PMID: 37629812 PMCID: PMC10456286 DOI: 10.3390/ma16165522] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2023] [Revised: 08/01/2023] [Accepted: 08/06/2023] [Indexed: 08/27/2023]
Abstract
Two widely used atomic layer deposition precursors, Tetrakis (dimethylamido) titanium (TDMA-Ti) and titanium tetrachloride (TiCl4), were investigated for use in the deposition of TiOx-based thin films as a passivating contact material for solar cells. This study revealed that both precursors are suited to similar deposition temperatures (150 °C). Post-deposition annealing plays a major role in optimising the titanium oxide (TiOx) film passivation properties, improving minority carrier lifetime (τeff) by more than 200 µs. Aluminium oxide deposited together with titanium oxide (AlOy/TiOx) reduced the sheet resistance by 40% compared with pure TiOx. It was also revealed that the passivation quality of the (AlOy/TiOx) stack depends on the precursor and ratio of AlOy to TiOx deposition cycles.
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Affiliation(s)
- Vladyslav Matkivskyi
- Department of Materials Science and Engineering, Norwegian University of Science and Technology, Alfred Getz vei 2B, 7034 Trondheim, Norway; (M.D.S.); (G.T.)
| | - Oskari Leiviskä
- Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, 02150 Espoo, Finland; (O.L.); (H.L.); (V.V.); (H.S.)
| | - Sigurd Wenner
- SINTEF Industry, Høgskoleringen 5, 7034 Trondheim, Norway;
| | - Hanchen Liu
- Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, 02150 Espoo, Finland; (O.L.); (H.L.); (V.V.); (H.S.)
| | - Ville Vähänissi
- Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, 02150 Espoo, Finland; (O.L.); (H.L.); (V.V.); (H.S.)
| | - Hele Savin
- Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, 02150 Espoo, Finland; (O.L.); (H.L.); (V.V.); (H.S.)
| | - Marisa Di Sabatino
- Department of Materials Science and Engineering, Norwegian University of Science and Technology, Alfred Getz vei 2B, 7034 Trondheim, Norway; (M.D.S.); (G.T.)
| | - Gabriella Tranell
- Department of Materials Science and Engineering, Norwegian University of Science and Technology, Alfred Getz vei 2B, 7034 Trondheim, Norway; (M.D.S.); (G.T.)
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Yun S, Ding Y, Zhang Y, Christofides PD. Integration of feedback control and run-to-run control for plasma enhanced atomic layer deposition of hafnium oxide thin films. Comput Chem Eng 2021. [DOI: 10.1016/j.compchemeng.2021.107267] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/22/2022]
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Machine learning-based modeling and operation of plasma-enhanced atomic layer deposition of hafnium oxide thin films. Comput Chem Eng 2021. [DOI: 10.1016/j.compchemeng.2020.107148] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
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Zhang Y, Ding Y, Christofides PD. Multiscale computational fluid dynamics modeling and reactor design of plasma-enhanced atomic layer deposition. Comput Chem Eng 2020. [DOI: 10.1016/j.compchemeng.2020.107066] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2023]
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Ding Y, Zhang Y, Orkoulas G, Christofides PD. Microscopic modeling and optimal operation of plasma enhanced atomic layer deposition. Chem Eng Res Des 2020. [DOI: 10.1016/j.cherd.2020.05.014] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022]
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Fan C, Jiang G, Tian Y, Gao Y, Rempe SL, Jiang YB. Achieving Uniform and Conformal ALD Coatings on Sub-10nm Pores Using Dual-Stage Exposure/ Purge at Optimized Growth Temperatures. ACTA ACUST UNITED AC 2018. [DOI: 10.1557/adv.2018.351] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
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Jin C, Liu B, Lei Z, Sun J. Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone. NANOSCALE RESEARCH LETTERS 2015; 10:95. [PMID: 25852391 PMCID: PMC4385123 DOI: 10.1186/s11671-015-0790-x] [Citation(s) in RCA: 25] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2014] [Accepted: 01/27/2015] [Indexed: 05/23/2023]
Abstract
TiO2 films were grown on silicon substrates by atomic layer deposition (ALD) using tetrakis-dimethylamino titanium and ozone. Amorphous TiO2 film was deposited at a low substrate temperature of 165°C, and anatase TiO2 film was grown at 250°C. The amorphous TiO2 film crystallizes to anatase TiO2 phase with annealing temperature ranged from 300°C to 1,100°C in N2 atmosphere, while the anatase TiO2 film transforms into rutile phase at a temperature of 1,000°C. Photoluminescence from anatase TiO2 films contains a red band at 600 nm and a green band at around 515 nm. The red band exhibits a strong correlation with defects of the under-coordinated Ti(3+) ions, and the green band shows a close relationship with the oxygen vacancies on (101) oriented anatase crystal surface. A blue shift of the photoluminescence spectra reveals that the defects of under-coordinated Ti(3+) ions transform to surface oxygen vacancies in the anatase TiO2 film annealing at temperature from 800°C to 900°C in N2 atmosphere.
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Affiliation(s)
- Chunyan Jin
- />Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics, Nankai University, Weijin Road 94, Tianjin, 300071 China
| | - Ben Liu
- />Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics, Nankai University, Weijin Road 94, Tianjin, 300071 China
| | - Zhongxiang Lei
- />Air Force Aviation University, Nanhu Road No. 2222, Changchun, 130022 China
| | - Jiaming Sun
- />Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics, Nankai University, Weijin Road 94, Tianjin, 300071 China
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Piszczek P, Richert M, Radtke A, Muzioł T, Wojtczak A. Synthesis of titanium dioxide nanocrystalline layers using hexaprismatic shaped μ-oxo Ti(IV) alkoxo carboxylates as precursors. Polyhedron 2009. [DOI: 10.1016/j.poly.2009.08.033] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/20/2022]
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Pore V, Kivelä T, Ritala M, Leskelä M. Atomic layer deposition of photocatalytic TiO2 thin films from TiF4 and H2O. Dalton Trans 2008:6467-74. [DOI: 10.1039/b809953g] [Citation(s) in RCA: 33] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Niskanen A, Arstila K, Leskelä M, Ritala M. Radical Enhanced Atomic Layer Deposition of Titanium Dioxide. ACTA ACUST UNITED AC 2007. [DOI: 10.1002/cvde.200606546] [Citation(s) in RCA: 40] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
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Bankras R, Holleman J, Schmitz J, Sturm M, Zinine A, Wormeester H, Poelsema B. In Situ Reflective High-Energy Electron Diffraction Analysis During the Initial Stage of a Trimethylaluminum/Water ALD Process. ACTA ACUST UNITED AC 2006. [DOI: 10.1002/cvde.200506433] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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Elers KE, Blomberg T, Peussa M, Aitchison B, Haukka S, Marcus S. Film Uniformity in Atomic Layer Deposition. ACTA ACUST UNITED AC 2006. [DOI: 10.1002/cvde.200500024] [Citation(s) in RCA: 81] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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Putkonen M, Sajavaara T, Niinistö L, Keinonen J. Analysis of ALD-processed thin films by ion-beam techniques. Anal Bioanal Chem 2005; 382:1791-9. [PMID: 16021420 DOI: 10.1007/s00216-005-3365-3] [Citation(s) in RCA: 66] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/06/2005] [Revised: 05/30/2005] [Accepted: 05/31/2005] [Indexed: 11/28/2022]
Abstract
This review introduces the possibilities of ion-beam techniques for the analysis of thin films and thin-film structures processed by atomic layer deposition (ALD). The characteristic features of ALD are also presented. The analytical techniques discussed include RBS, NRA and ERDA with its variants, viz. the TOF-ERDA and HI-ERDA. The thin film examples are taken from flat-panel display technology (TFEL structures) and the semiconductor industry (high-k insulators).
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Affiliation(s)
- Matti Putkonen
- Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, P.O. Box 6100, 02015 Espoo, Finland
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