1
|
Han MJ, Kim M, Tsukruk VV. Multivalued Logic for Optical Computing with Photonically Enabled Chiral Bio-organic Structures. ACS NANO 2022; 16:13684-13694. [PMID: 35882006 DOI: 10.1021/acsnano.2c04182] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Photonic bio-organic multiphase structures are suggested here for integrated thin-film electronic nets with multilevel logic elements for multilevel computing via a reconfigurable photonic bandgap of chiral biomaterials. Herein, inspired by an artificial intelligence system with efficient information integration and computing capability, the photonically active dielectric layer of chiral nematic cellulose nanocrystals is combined with printed-in p- and n-type organic semiconductors as a bifunctional logical element. These adaptive logic elements are capable of triggering tailored quantized electrical output signals under light with different photon energy and at the different photonic bandgaps of the active dielectric layer. The bifunctional structures enable complex memory behavior upon repetitive changes of photonic bandgap (controlled by expansion/contraction of chiral nematic pitch) and photon energy (controlled by light absorption wavelength of complementary organic semiconductor layers), exhibiting effectively a reconfigurable ternary logic response. This proof-of-concept bio-assisted multivalued logic structure facilitates an optical computing system for low-power optical information processing integrated with human-machine interfaces.
Collapse
Affiliation(s)
- Moon Jong Han
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Minkyu Kim
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Vladimir V Tsukruk
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| |
Collapse
|
2
|
Jo SB, Kang J, Cho JH. Recent Advances on Multivalued Logic Gates: A Materials Perspective. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2004216. [PMID: 33898193 PMCID: PMC8061388 DOI: 10.1002/advs.202004216] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/03/2020] [Revised: 12/13/2020] [Indexed: 06/12/2023]
Abstract
The recent advancements in multivalued logic gates represent a rapid paradigm shift in semiconductor technology toward a new era of hyper Moore's law. Particularly, the significant evolution of materials is guiding multivalued logic systems toward a breakthrough gradually, whereby they are transcending the limits of conventional binary logic systems in terms of all the essential figures of merit, i.e., power dissipation, operating speed, circuit complexity, and, of course, the level of the integration. In this review, recent advances in the field of multivalued logic gates based on emerging materials to provide a comprehensive guideline for possible future research directions are reviewed. First, an overview of the design criteria and figures of merit for multivalued logic gates is presented, and then advancements in various emerging nanostructured materials-ranging from 0D quantum dots to multidimensional heterostructures-are summarized and these materials in terms of device design criteria are assessed. The current technological challenges and prospects of multivalued logic devices are also addressed and major research trends are elucidated.
Collapse
Affiliation(s)
- Sae Byeok Jo
- Department of Chemical and Biomolecular EngineeringYonsei UniversitySeoul03722South Korea
| | - Joohoon Kang
- School of Advanced Materials Science and EngineeringSungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular EngineeringYonsei UniversitySeoul03722South Korea
| |
Collapse
|
3
|
The electric memory properties of azo-chalcone derivatives based on different film forming processes. J Mol Struct 2021. [DOI: 10.1016/j.molstruc.2020.129480] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
|
4
|
Cao Q, Lü W, Wang XR, Guan X, Wang L, Yan S, Wu T, Wang X. Nonvolatile Multistates Memories for High-Density Data Storage. ACS APPLIED MATERIALS & INTERFACES 2020; 12:42449-42471. [PMID: 32812741 DOI: 10.1021/acsami.0c10184] [Citation(s) in RCA: 38] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In the current information age, the realization of memory devices with energy efficient design, high storage density, nonvolatility, fast access, and low cost is still a great challenge. As a promising technology to meet these stringent requirements, nonvolatile multistates memory (NMSM) has attracted lots of attention over the past years. Owing to the capability to store data in more than a single bit (0 or 1), the storage density is dramatically enhanced without scaling down the memory cell, making memory devices more efficient and less expensive. Multistates in a single cell also provide an unconventional in-memory computing platform beyond the Von Neumann architecture and enable neuromorphic computing with low power consumption. In this review, an in-depth perspective is presented on the recent progress and challenges on the device architectures, material innovation, working mechanisms of various types of NMSMs, including flash, magnetic random-access memory (MRAM), resistive random-access memory (RRAM), ferroelectric random-access memory (FeRAM), and phase-change memory (PCM). The intriguing properties and performance of these NMSMs, which are the key to realizing highly integrated memory hierarchy, are discussed and compared.
Collapse
Affiliation(s)
- Qiang Cao
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Weiming Lü
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - X Renshaw Wang
- School of Physical and Mathematical Sciences & School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 Singapore
| | - Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Lan Wang
- School of Science, ARC Centre of Excellence in Future Low-Energy Electronics Technologies, RMIT University, Melbourne, Victoria 3001, Australia
| | - Shishen Yan
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
| | | |
Collapse
|
5
|
Lv F, Ling K, Zhong T, Liu F, Liang X, Zhu C, Liu J, Kong W. Multilevel Resistive Switching Memory Based on a CH 3NH 3PbI 3-xCl x Film with Potassium Chloride Additives. NANOSCALE RESEARCH LETTERS 2020; 15:126. [PMID: 32504244 PMCID: PMC7275113 DOI: 10.1186/s11671-020-03356-3] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/26/2020] [Accepted: 05/18/2020] [Indexed: 06/11/2023]
Abstract
High-quality CH3NH3PbI 3-xClx (MAPIC) films were prepared using potassium chloride (KCl) as an additive on indium tin oxide (ITO)-coated glass substrates using a simple one-step and low-temperature solution reaction. The Au/KCl-MAPIC/ITO/glass devices exhibited obvious multilevel resistive switching behavior, moderate endurance, and good retention performance. Electrical conduction analysis indicated that the resistive switching behavior of the KCl-doped MAPIC films was primarily attributed to the trap-controlled space-charge-limited current conduction that was caused by the iodine vacancies in the films. Moreover, the modulations of the barrier in the Au/KCl-MAPIC interface under bias voltages were thought to be responsible for the resistive switching in the carrier injection trapping/detrapping process.
Collapse
Affiliation(s)
- Fengzhen Lv
- College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China.
| | - Kang Ling
- College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China
| | - Tingting Zhong
- College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China
| | - Fuchi Liu
- College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China.
| | - Xiaoguang Liang
- College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China
| | - Changming Zhu
- College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China
| | - Jun Liu
- College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China
| | - Wenjie Kong
- College of Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China
| |
Collapse
|
6
|
Hu L, Yuan J, Ren Y, Wang Y, Yang JQ, Zhou Y, Zeng YJ, Han ST, Ruan S. Phosphorene/ZnO Nano-Heterojunctions for Broadband Photonic Nonvolatile Memory Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1801232. [PMID: 29888554 DOI: 10.1002/adma.201801232] [Citation(s) in RCA: 37] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2018] [Revised: 04/21/2018] [Indexed: 06/08/2023]
Abstract
High-performance photonic nonvolatile memory combining photosensing and data storage with low power consumption ensures the energy efficiency of computer systems. This study first reports in situ derived phosphorene/ZnO hybrid heterojunction nanoparticles and their application in broadband-response photonic nonvolatile memory. The photonic nonvolatile memory consistently exhibits broadband response from ultraviolet (380 nm) to near infrared (785 nm), with controllable shifts of the SET voltage. The broadband resistive switching is attributed to the enhanced photon harvesting, a fast exciton separation, as well as the formation of an oxygen vacancy filament in the nano-heterojunction. In addition, the device exhibits an excellent stability under air exposure compared with reported pristine phosphorene-based nonvolatile memory. The superior antioxidation capacity is believed to originate from the fast transfer of lone-pair electrons of phosphorene. The unique assembly of phosphorene/ZnO nano-heterojunctions paves the way toward multifunctional broadband-response data-storage techniques.
Collapse
Affiliation(s)
- Liang Hu
- Shenzhen Key Laboratory of Laser Engineering, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Jun Yuan
- Shenzhen Key Laboratory of Laser Engineering, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yi Ren
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yan Wang
- College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Jia-Qin Yang
- College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yu-Jia Zeng
- Shenzhen Key Laboratory of Laser Engineering, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Shuangchen Ruan
- Shenzhen Key Laboratory of Laser Engineering, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| |
Collapse
|
7
|
Hota MK, Alshammari FH, Salama KN, Alshareef HN. Transparent Flash Memory Using Single Ta 2O 5 Layer for Both Charge-Trapping and Tunneling Dielectrics. ACS APPLIED MATERIALS & INTERFACES 2017; 9:21856-21863. [PMID: 28593752 DOI: 10.1021/acsami.7b03078] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as a charge-trapping layer and a tunneling layer. This is different from conventional flash memory cells where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ∼10.7 V. Moreover, the flash memory device shows a stable 2-bit memory performance and good reliability, including data retention for more than 104 s and endurance performance for more than 100 cycles. The use of a common charge-trapping and tunneling layer can simplify the fabrication of advanced flash memories.
Collapse
Affiliation(s)
- Mrinal K Hota
- Physical Sciences and Engineering Division and ‡Computer, Electrical and Mathematical Sciences & Engineering Division, King Abdullah University of Science & Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Fwzah H Alshammari
- Physical Sciences and Engineering Division and ‡Computer, Electrical and Mathematical Sciences & Engineering Division, King Abdullah University of Science & Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Khaled N Salama
- Physical Sciences and Engineering Division and ‡Computer, Electrical and Mathematical Sciences & Engineering Division, King Abdullah University of Science & Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Husam N Alshareef
- Physical Sciences and Engineering Division and ‡Computer, Electrical and Mathematical Sciences & Engineering Division, King Abdullah University of Science & Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| |
Collapse
|
8
|
Sun Y, Wen D, Bai X, Lu J, Ai C. Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer. Sci Rep 2017; 7:3938. [PMID: 28638136 PMCID: PMC5479854 DOI: 10.1038/s41598-017-04299-z] [Citation(s) in RCA: 34] [Impact Index Per Article: 4.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/06/2016] [Accepted: 05/15/2017] [Indexed: 11/21/2022] Open
Abstract
Nonvolatile ternary memory devices were fabricated using the composite of polystyrene (PS) and graphene oxide(GO) as active layers, which have an reliable intermediate state. The current-voltage (I-V) curves of the indium tin oxide (ITO)/PS+GO/Al device under the external applied voltages exhibited current tri-stability with three conductivity states, which clearly revealed ternary memory performance. Under the stimulus of the external voltage, a stable intermediate conductivity state was observed. In the write-read-erase-read test, the ITO/PS+GO/Al device exhibited rewritable, nonvolatile, ternary memory properties. The resistance as functions of the time indicated that three conductivity states held for 2 × 105 s, suggesting that the good stability of the ITO/PS+GO/Al devices. HRTEM and XPS observation indicated that the Al top electrode reacted with oxygen within in GO.
Collapse
Affiliation(s)
- Yanmei Sun
- HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China
- Communication and Electronics Engineering Institute, Qiqihar University, Qiqihar, 161006, China
| | - Dianzhong Wen
- HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China.
| | - Xuduo Bai
- School of Chemistry and Materials Science, Heilongjiang University, Harbin, 150080, China.
| | - Junguo Lu
- HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China
- Communication and Electronics Engineering Institute, Qiqihar University, Qiqihar, 161006, China
| | - Chunpeng Ai
- HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China
| |
Collapse
|
9
|
Ordered Monolayer Gold Nano-urchin Structures and Their Size Induced Control for High Gas Sensing Performance. Sci Rep 2016; 6:24625. [PMID: 27090570 PMCID: PMC4835752 DOI: 10.1038/srep24625] [Citation(s) in RCA: 45] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/05/2016] [Accepted: 03/31/2016] [Indexed: 11/09/2022] Open
Abstract
The synthesis of ordered monolayers of gold nano-urchin (Au-NU) nanostructures with controlled size, directly on thin films using a simple electrochemical method is reported in this study. In order to demonstrate one of the vast potential applications, the developed Au-NUs were formed on the electrodes of transducers (QCM) to selectively detect low concentrations of elemental mercury (Hg(0)) vapor. It was found that the sensitivity and selectivity of the sensor device is enhanced by increasing the size of the nanospikes on the Au-NUs. The Au-NU-12 min QCM (Au-NUs with nanospikes grown on it for a period of 12 min) had the best performance in terms of transducer based Hg(0) vapor detection. The sensor had 98% accuracy, 92% recovery, 96% precision (repeatability) and significantly, showed the highest sensitivity reported to date, resulting in a limit of detection (LoD) of only 32 μg/m3 at 75 °C. When compared to the control counterpart, the accuracy and sensitivity of the Au-NU-12 min was enhanced by ~2 and ~5 times, respectively. The results demonstrate the excellent activity of the developed materials which can be applied to a range of applications due to their long range order, tunable size and ability to form directly on thin-films.
Collapse
|
10
|
Liu Q, Dong H, Li Y, Li H, Chen D, Wang L, Xu Q, Lu J. Improving Memory Performances by Adjusting the Symmetry and Polarity of O-Fluoroazobenzene-Based Molecules. Chem Asian J 2016; 11:512-9. [PMID: 26530289 DOI: 10.1002/asia.201501030] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/24/2015] [Indexed: 11/11/2022]
Abstract
Three O-fluoroazobenzene-based molecules were chosen as memory-active molecules: FAZO-1 with a D-A2-D symmetric structure, FAZO-2 with an A1-A2-A1 symmetric structure, and FAZO-3 with a D-A2-A1 asymmetric structure. Both FAZO-1 and FAZO-2 had a lower molecular polarity, whereas FAZO-3 had a higher polarity. The fabricated indium-tin oxide (ITO)/FAZO-1/Al (Au) and ITO/FAZO-2/Al (Au) memory devices both exhibited volatile static random access memory (SRAM) behavior, whereas the ITO/FAZO-3/Al (Au) device showed nonvolatile ternary write-once-read-many-times (WORM) behavior. It should be noted that the reproducibility of these devices was considerably high, which is significant for practical application in memory devices. In addition, the different memory performances of the three active materials were determined to be attributable to the stability of electric-field-induced charge-transfer complexes. Therefore, the switching memory behavior could be tuned by adjusting the molecular polarity.
Collapse
Affiliation(s)
- Quan Liu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China
| | - Huilong Dong
- Functional Nano & Soft Materials Laboratory (FUNSOM) and, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Youyong Li
- Functional Nano & Soft Materials Laboratory (FUNSOM) and, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Hua Li
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China
| | - Dongyun Chen
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China
| | - Lihua Wang
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China
| | - Qingfeng Xu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China.
| | - Jianmei Lu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China.
| |
Collapse
|
11
|
Li Y, Li H, He J, Xu Q, Li N, Chen D, Lu J. Inserting Thienyl Linkers into Conjugated Molecules for Efficient Multilevel Electronic Memory: A New Understanding of Charge-Trapping in Organic Materials. Chem Asian J 2016; 11:906-14. [DOI: 10.1002/asia.201501441] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/25/2015] [Indexed: 11/11/2022]
Affiliation(s)
- Yang Li
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Hua Li
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Jinghui He
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Qingfeng Xu
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Najun Li
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Dongyun Chen
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Jianmei Lu
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| |
Collapse
|
12
|
Khurana G, Misra P, Kumar N, Kooriyattil S, Scott JF, Katiyar RS. Enhanced resistive switching in forming-free graphene oxide films embedded with gold nanoparticles deposited by electrophoresis. NANOTECHNOLOGY 2016; 27:015702. [PMID: 26594840 DOI: 10.1088/0957-4484/27/1/015702] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Forming-free resistive random access memory (ReRAM) devices having low switching voltages are a prerequisite for their commercial applications. In this study, the forming-free resistive switching characteristics of graphene oxide (GO) films embedded with gold nanoparticles (Au Nps), having an enhanced on/off ratio at very low switching voltages, were investigated for non-volatile memories. The GOAu films were deposited by the electrophoresis method and as-grown films were found to be in the low resistance state; therefore no forming voltage was required to activate the devices for switching. The devices having an enlarged on/off ratio window of ∼10(6) between two resistance states at low voltages (<1 V) for repetitive dc voltage sweeps showed excellent properties of endurance and retention. In these films Au Nps were uniformly dispersed over a large area that provided charge traps, which resulted in improved switching characteristics. Capacitance was also found to increase by a factor of ∼10, when comparing high and low resistance states in GOAu and pristine GO devices. Charge trapping and de-trapping by Au Nps was the mechanism responsible for the improved switching characteristics in the films.
Collapse
Affiliation(s)
- Geetika Khurana
- Institute of Functional Nanomaterials and Department of Physics, University of Puerto Rico, Rio Piedras, San Juan, PR 00936-8377, USA
| | | | | | | | | | | |
Collapse
|
13
|
Liu Q, Xu Q, Dong H, Li H, Chen D, Wang L, Li Y, Lu J. A salification-induced charge transfer effect for improving the resistive memory performance of azo derivative-based devices. RSC Adv 2016. [DOI: 10.1039/c5ra25099d] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
We introduce salification to prepare an organic resistive memory material with higher ON/OFF ratio and properties.
Collapse
Affiliation(s)
- Quan Liu
- College of Chemistry
- Chemical Engineering and Materials Science
- Key Laboratory of Adsorption Technology in Petroleum and Chemical Industry for Wastewater Treatments
- Soochow University
- Suzhou 215123
| | - Qingfeng Xu
- College of Chemistry
- Chemical Engineering and Materials Science
- Key Laboratory of Adsorption Technology in Petroleum and Chemical Industry for Wastewater Treatments
- Soochow University
- Suzhou 215123
| | - Huilong Dong
- Functional Nano & Soft Materials Laboratory (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices
- Soochow University
- Suzhou
- China
| | - Hua Li
- College of Chemistry
- Chemical Engineering and Materials Science
- Key Laboratory of Adsorption Technology in Petroleum and Chemical Industry for Wastewater Treatments
- Soochow University
- Suzhou 215123
| | - Dongyun Chen
- College of Chemistry
- Chemical Engineering and Materials Science
- Key Laboratory of Adsorption Technology in Petroleum and Chemical Industry for Wastewater Treatments
- Soochow University
- Suzhou 215123
| | - Lihua Wang
- College of Chemistry
- Chemical Engineering and Materials Science
- Key Laboratory of Adsorption Technology in Petroleum and Chemical Industry for Wastewater Treatments
- Soochow University
- Suzhou 215123
| | - Youyong Li
- Functional Nano & Soft Materials Laboratory (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices
- Soochow University
- Suzhou
- China
| | - Jianmei Lu
- College of Chemistry
- Chemical Engineering and Materials Science
- Key Laboratory of Adsorption Technology in Petroleum and Chemical Industry for Wastewater Treatments
- Soochow University
- Suzhou 215123
| |
Collapse
|
14
|
Han ST, Zhou Y, Chen B, Zhou L, Yan Y, Zhang H, Roy VAL. Two-dimensional molybdenum disulphide nanosheet-covered metal nanoparticle array as a floating gate in multi-functional flash memories. NANOSCALE 2015; 7:17496-17503. [PMID: 26445097 DOI: 10.1039/c5nr05054e] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Semiconducting two-dimensional materials appear to be excellent candidates for non-volatile memory applications. However, the limited controllability of charge trapping behaviors and the lack of multi-bit storage studies in two-dimensional based memory devices require further improvement for realistic applications. Here, we report a flash memory consisting of metal NPs-molybdenum disulphide (MoS2) as a floating gate by introducing a metal nanoparticle (NP) (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets. Controlled charge trapping and long data retention have been achieved in a metal (Ag, Au, Pt) NPs-MoS2 floating gate flash memory. This controlled charge trapping is hypothesized to be attributed to band bending and a built-in electric field ξbi between the interface of the metal NPs and MoS2. The metal NPs-MoS2 floating gate flash memories were further proven to be multi-bit memory storage devices possessing a 3-bit storage capability and a good retention capability up to 10(4) s. We anticipate that these findings would provide scientific insight for the development of novel memory devices utilizing an atomically thin two-dimensional lattice structure.
Collapse
Affiliation(s)
- Su-Ting Han
- Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China.
| | | | | | | | | | | | | |
Collapse
|
15
|
Gu QF, He JH, Chen DY, Dong HL, Li YY, Li H, Xu QF, Lu JM. Multilevel conductance switching of a memory device induced by enhanced intermolecular charge transfer. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:5968-5973. [PMID: 26316377 DOI: 10.1002/adma.201502274] [Citation(s) in RCA: 47] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2015] [Revised: 06/22/2015] [Indexed: 06/04/2023]
Abstract
The modification of the terminal electron-donating groups induces a critical change in molecular aggregation and the intermolecular charge-transfer effect of the symmetric D-A1-A2-A1-D molecules that correlate with an addressable variation of memory performance from binary to ternary.
Collapse
Affiliation(s)
- Qian-Feng Gu
- College of Chemistry, Chemical Engineering and Materials Science Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, China
| | - Jing-Hui He
- College of Chemistry, Chemical Engineering and Materials Science Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, China
| | - Dong-Yun Chen
- College of Chemistry, Chemical Engineering and Materials Science Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, China
| | - Hui-Long Dong
- Functional Nano and Soft Materials Laboratory (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, China
| | - You-Yong Li
- Functional Nano and Soft Materials Laboratory (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, China
| | - Hua Li
- College of Chemistry, Chemical Engineering and Materials Science Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, China
| | - Qing-Feng Xu
- College of Chemistry, Chemical Engineering and Materials Science Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, China
| | - Jian-Mei Lu
- College of Chemistry, Chemical Engineering and Materials Science Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, China
| |
Collapse
|
16
|
Kang M, Khim D, Park WT, Kim J, Kim J, Noh YY, Baeg KJ, Kim DY. Synergistic High Charge-Storage Capacity for Multi-level Flexible Organic Flash Memory. Sci Rep 2015. [PMID: 26201747 PMCID: PMC4511867 DOI: 10.1038/srep12299] [Citation(s) in RCA: 44] [Impact Index Per Article: 4.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022] Open
Abstract
Electret and organic floating-gate memories are next-generation flash storage mediums for printed organic complementary circuits. While each flash memory can be easily fabricated using solution processes on flexible plastic substrates, promising their potential for on-chip memory organization is limited by unreliable bit operation and high write loads. We here report that new architecture could improve the overall performance of organic memory, and especially meet high storage for multi-level operation. Our concept depends on synergistic effect of electrical characterization in combination with a polymer electret (poly(2-vinyl naphthalene) (PVN)) and metal nanoparticles (Copper). It is distinguished from mostly organic nano-floating-gate memories by using the electret dielectric instead of general tunneling dielectric for additional charge storage. The uniform stacking of organic layers including various dielectrics and poly(3-hexylthiophene) (P3HT) as an organic semiconductor, followed by thin-film coating using orthogonal solvents, greatly improve device precision despite easy and fast manufacture. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] as high-k blocking dielectric also allows reduction of programming voltage. The reported synergistic organic memory devices represent low power consumption, high cycle endurance, high thermal stability and suitable retention time, compared to electret and organic nano-floating-gate memory devices.
Collapse
Affiliation(s)
- Minji Kang
- Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
| | - Dongyoon Khim
- Department of Physics, Blackett Laboratory, Imperial College London, London, SW7 2AZ, UK
| | - Won-Tae Park
- Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul 100-715, Republic of Korea
| | - Jihong Kim
- Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
| | - Juhwan Kim
- Department of Chemical Engineering and Materials Science, University of California, Irvine, Irvine, California 92697, United States
| | - Yong-Young Noh
- Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul 100-715, Republic of Korea
| | - Kang-Jun Baeg
- Nanocarbon Materials Research Group, Korea Electrotechnology Research Institute (KERI) 12 Bulmosan-ro 10Beon-gil, Seongsan-gu, Changwon, Gyeongsangnam-do 642-120, Republic of Korea
| | - Dong-Yu Kim
- Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
| |
Collapse
|
17
|
Wang C, Yamashita M, Hu B, Zhou Y, Wang J, Wu J, Huo F, Lee PS, Aratani N, Yamada H, Zhang Q. Synthesis, Characterization, and Memory Performance of Two Phenazine/Triphenylamine-Based Organic Small Molecules through Donor-Acceptor Design. ASIAN J ORG CHEM 2015. [DOI: 10.1002/ajoc.201500087] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Chengyuan Wang
- School of Materials Science and Engineering; Nanyang Technological University; Singapore 639798 Singapore
| | - Masataka Yamashita
- Graduate School of Materials Science; Nara Institute of Science and Technology; Ikoma 630-0192 Japan
| | - Benlin Hu
- School of Materials Science and Engineering; Nanyang Technological University; Singapore 639798 Singapore
| | - Yi Zhou
- School of Materials Science and Engineering; Nanyang Technological University; Singapore 639798 Singapore
| | - Jiangxin Wang
- School of Materials Science and Engineering; Nanyang Technological University; Singapore 639798 Singapore
| | - Jin Wu
- School of Materials Science and Engineering; Nanyang Technological University; Singapore 639798 Singapore
| | - Fengwei Huo
- School of Materials Science and Engineering; Nanyang Technological University; Singapore 639798 Singapore
| | - Pooi See Lee
- School of Materials Science and Engineering; Nanyang Technological University; Singapore 639798 Singapore
| | - Naoki Aratani
- Graduate School of Materials Science; Nara Institute of Science and Technology; Ikoma 630-0192 Japan
| | - Hiroko Yamada
- Graduate School of Materials Science; Nara Institute of Science and Technology; Ikoma 630-0192 Japan
| | - Qichun Zhang
- School of Materials Science and Engineering; Nanyang Technological University; Singapore 639798 Singapore
- Division of Chemistry and Biological Chemistry; School of Physical and Mathematical Sciences; Nanyang Technological University; Singapore 637371 Singapore
| |
Collapse
|
18
|
Chi HY, Hsu HW, Tung SH, Liu CL. Nonvolatile organic field-effect transistors memory devices using supramolecular block copolymer/functional small molecule nanocomposite electret. ACS APPLIED MATERIALS & INTERFACES 2015; 7:5663-5673. [PMID: 25711539 DOI: 10.1021/acsami.5b00338] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Organic field-effect transistors (OFETs) memory devices based on hybrid nanocomposite electret were fabricated by cooperative supramolecular polystyrene-block-poly(4-vinylpyridine) (PS-b-P4VP) with two different block compositions (asymmetric L1 and symmetric L2) that contain hydroxyl-functionalized ferrocene small molecules (FMs). Because of the selective hydrogen interaction between the hydroxyl groups of FM and pyridine groups in P4VP block, the small FMs can preferentially disperse in the P4VP nanodomain, which can be used as nanostructured charge-trapping nanocomposite electret (L1-FMX and L2-FMX) under solvent-annealing process. The charge-storage functionalities can be easily tailored by morphologies of the hybrid nanocomposite thin film and spatial distribution of the FM molecules in which the relative molecular mass of block copolymers and the FM loading ratio can further control both of them. These block copolymer nanocomposite thin film electrets with charge-controlling guest FM for OFETs memory devices exhibit significant features including the ternary bits storage, high-density trapping sites, charge-carrier trapping of both polarities (ambipolar trapping), and solution processing that can make important progress for future advanced storage and memory technology.
Collapse
Affiliation(s)
- Hui-Yen Chi
- †Department of Chemical and Materials Engineering, National Central University, Taoyuan, 32001 Taiwan
| | - Han-Wen Hsu
- †Department of Chemical and Materials Engineering, National Central University, Taoyuan, 32001 Taiwan
| | - Shih-Huang Tung
- ‡Institute of Polymer Science and Engineering, National Taiwan University, Taipei, 10617 Taiwan
| | - Cheng-Liang Liu
- †Department of Chemical and Materials Engineering, National Central University, Taoyuan, 32001 Taiwan
| |
Collapse
|
19
|
Park YS, Lee JS. Design of an efficient charge-trapping layer with a built-in tunnel barrier for reliable organic-transistor memory. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:706-711. [PMID: 25475911 DOI: 10.1002/adma.201404625] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2014] [Revised: 11/03/2014] [Indexed: 06/04/2023]
Abstract
A fully feasible and versatile way to fabricate highly reliable organic-transistor memory devices is made possible by a novel design of the charge-trappling layer. Gold@silica (core-shell)-structured nanoparticles are synthesized and used as the charge-trapping layer. Superior electrical reliability is obtained because the silica shell acts as a built-in tunnel potential barrier.
Collapse
Affiliation(s)
- Young-Su Park
- School of Advanced Materials Engineering, Kookmin University, Seoul, 136-702, Korea
| | | |
Collapse
|
20
|
Kang M, Kim YA, Yun JM, Khim D, Kim J, Noh YY, Baeg KJ, Kim DY. Stable charge storing in two-dimensional MoS2 nanoflake floating gates for multilevel organic flash memory. NANOSCALE 2014; 6:12315-12323. [PMID: 25183039 DOI: 10.1039/c4nr03448a] [Citation(s) in RCA: 25] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
In this study, we investigated chemically exfoliated two-dimensional (2-D) nanoflakes of molybdenum disulfide (MoS2) as charge-storing elements for use in organic multilevel memory devices (of the printed/flexible non-volatile type) based on organic field-effect transistors (OFETs) containing poly(3-hexylthiophene) (P3HT). The metallic MoS2 nanoflakes were exfoliated in 2-methoxyethanol by the lithium intercalation method and were deposited as nano-floating gates between polystyrene and poly(methyl methacrylate), used as bilayered gate dielectrics, by a simple spin-coating and low temperature (<150 °C) process. In the developed OFET memory devices, electrons could be trapped/detrapped in the MoS2 nano-floating gates by modulating the charge carrier density in the active channel through gate bias control. Optimal memory characteristics were achieved by controlling the thickness and concentration of few-layered MoS2 nanoflakes, and the best device showed reliable non-volatile memory properties: a sufficient memory window of ∼23 V, programming-reading-erasing cycling endurance of >10(2) times, and most importantly, quasi-permanent charge-storing characteristics, i.e., a very long retention time (longer than the technological requirement of commercial memory devices (>10 years)). In addition, we successfully developed multilevel memory cells (2 bits per cell) by controlling the gate bias magnitude.
Collapse
Affiliation(s)
- Minji Kang
- Heeger Center for Advanced Materials, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.
| | | | | | | | | | | | | | | |
Collapse
|
21
|
Chen CM, Huang YJ, Wei KH. Structural development of gold and silver nanoparticles within hexagonally ordered spherical micellar diblock copolymer thin films. NANOSCALE 2014; 6:5999-6008. [PMID: 24777196 DOI: 10.1039/c4nr00020j] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
The spatial arrangement of metal nanoparticle (NP) arrays in block copolymers has many potential applications in OFET-type memory devices. In this study, we adopted a trapping approach in which we used a monolayer thin film of polystyrene-block-poly(4-vinylpyridine) (PS56k-b-P4VP8k)-a highly asymmetric diblock copolymer having a spherical micelle morphology-to incorporate various amounts of one-phase-synthesized dodecanethiol-passivated silver (DT-Ag) NPs and a fixed amount of ligand-exchanged pyridine-coated gold (Py-Au) NPs into the polystyrene (PS) and poly(4-vinylpyridine) (P4VP) blocks, respectively. We characterized the packing of these metal NPs in the two blocks of the nanostructured diblock copolymer using reciprocal-space synchrotron grazing incidence small-angle X-ray scattering (GISAXS) as well as atomic force microscopy (AFM) and transmission electron microscopy (TEM) in the real space. The packing of the Ag NPs in the PS block was dependent on their content, which we tuned by varying the concentrations in the composite solution at a constant rate of spin-coating. The two-dimensional hierarchical arrangement of Ag and Au NPs within the BCP thin films was enhanced after addition of the Py-Au NPs into the P4VP block and after spin-coating a thinner film from a low concentration solution (0.1 wt%), due to the DT-Ag NPs accumulating around the Py-Au/P4VP cores; this two-dimensional hierarchical arrangement decreased at a critical DT-Ag NP weight ratio (c) of 0.8 when incorporating the Py-Au NPs into the P4VP domains through spin-coating at higher solution concentration (0.5 wt%), where the DT-Ag NPs realigned by rotating 20° along the z axis in the real space, due to oversaturation of the DT-Ag NPs within the PS domains.
Collapse
Affiliation(s)
- Chia-Min Chen
- Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu, 30050, Taiwan.
| | | | | |
Collapse
|
22
|
Serrà A, Gómez E, López-Barbera JF, Nogués J, Vallés E. Green electrochemical template synthesis of CoPt nanoparticles with tunable size, composition, and magnetism from microemulsions using an ionic liquid (bmimPF6). ACS NANO 2014; 8:4630-4639. [PMID: 24786899 DOI: 10.1021/nn500367q] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Electrodeposition from microemulsions using ionic liquids is revealed as a green method for synthesizing magnetic alloyed nanoparticles, avoiding the use of aggressive reducing agents. Microemulsions containing droplets of aqueous solution (electrolytic solution containing Pt(IV) and Co(II) ions) in an ionic liquid (bmimPF6) define nanoreactors in which the electrochemical reduction takes place. Highly crystalline hcp alloyed CoPt nanoparticles, in the 10-120 nm range with a rather narrow size distribution, have been deposited on a conductive substrate. The relative amount of aqueous solution to ionic liquid determines the size of the nanoreactors, which serve as nanotemplates for the growth of the nanoparticles and hence determine their size and distribution. Further, the stoichiometry (Pt(x)Co(1-x)) of the particles can be tuned by the composition of the electrolytic solution inside the droplets. The control of the size and composition of the particles allows tailoring the room-temperature magnetic behavior of the nanoparticles from superparaparamagnetic to hard magnetic (with a coercivity of HC = 4100 Oe) in the as-obtained state.
Collapse
Affiliation(s)
- Albert Serrà
- Departament de Química Física and Institut de Nanociència i Nanotecnologia (IN2UB), Universitat de Barcelona , Martí i Franquès 1, 08028, Barcelona, Spain
| | | | | | | | | |
Collapse
|
23
|
Chen M, Nam H, Wi S, Priessnitz G, Gunawan IM, Liang X. Multibit data storage states formed in plasma-treated MoS₂ transistors. ACS NANO 2014; 8:4023-4032. [PMID: 24680193 DOI: 10.1021/nn501181t] [Citation(s) in RCA: 68] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
New multibit memory devices are desirable for improving data storage density and computing speed. Here, we report that multilayer MoS2 transistors, when treated with plasmas, can dramatically serve as low-cost, nonvolatile, highly durable memories with binary and multibit data storage capability. We have demonstrated binary and 2-bit/transistor (or 4-level) data states suitable for year-scale data storage applications as well as 3-bit/transistor (or 8-level) data states for day-scale data storage. This multibit memory capability is hypothesized to be attributed to plasma-induced doping and ripple of the top MoS2 layers in a transistor, which could form an ambipolar charge-trapping layer interfacing the underlying MoS2 channel. This structure could enable the nonvolatile retention of charged carriers as well as the reversible modulation of polarity and amount of the trapped charge, ultimately resulting in multilevel data states in memory transistors. Our Kelvin force microscopy results strongly support this hypothesis. In addition, our research suggests that the programming speed of such memories can be improved by using nanoscale-area plasma treatment. We anticipate that this work would provide important scientific insights for leveraging the unique structural property of atomically layered two-dimensional materials in nanoelectronic applications.
Collapse
Affiliation(s)
- Mikai Chen
- Department of Mechanical Engineering, University of Michigan , 2011 W.E. Lay Automotive Laboratory, 1231 Beal Avenue, Ann Arbor, Michigan 48109, United States
| | | | | | | | | | | |
Collapse
|
24
|
Yu AD, Tung WY, Chiu YC, Chueh CC, Liou GS, Chen WC. Multilevel Nonvolatile Flexible Organic Field-Effect Transistor Memories Employing Polyimide Electrets with Different Charge-Transfer Effects. Macromol Rapid Commun 2014; 35:1039-45. [DOI: 10.1002/marc.201400089] [Citation(s) in RCA: 28] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/10/2014] [Revised: 03/06/2014] [Indexed: 11/08/2022]
Affiliation(s)
- An-Dih Yu
- Department of Chemical Engineering; National Taiwan University; Taipei 10617 Taiwan
| | - Wei-Yao Tung
- Institute of Polymer Science and Engineering; National Taiwan University; Taipei 10617 Taiwan
| | - Yu-Cheng Chiu
- Department of Chemical Engineering; National Taiwan University; Taipei 10617 Taiwan
| | - Chu-Chen Chueh
- Department of Chemical Engineering; National Taiwan University; Taipei 10617 Taiwan
| | - Guey-Sheng Liou
- Institute of Polymer Science and Engineering; National Taiwan University; Taipei 10617 Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering; National Taiwan University; Taipei 10617 Taiwan
| |
Collapse
|
25
|
Han ST, Zhou Y, Yang QD, Zhou L, Huang LB, Yan Y, Lee CS, Roy VAL. Energy-band engineering for tunable memory characteristics through controlled doping of reduced graphene oxide. ACS NANO 2014; 8:1923-1931. [PMID: 24472000 DOI: 10.1021/nn406505t] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Tunable memory characteristics are used in multioperational mode circuits where memory cells with various functionalities are needed in one combined device. It is always a challenge to obtain control over threshold voltage for multimode operation. On this regard, we use a strategy of shifting the work function of reduced graphene oxide (rGO) in a controlled manner through doping gold chloride (AuCl3) and obtained a gradient increase of rGO work function. By inserting doped rGO as floating gate, a controlled threshold voltage (Vth) shift has been achieved in both p- and n-type low voltage flexible memory devices with large memory window (up to 4 times for p-type and 8 times for n-type memory devices) in comparison with pristine rGO floating gate memory devices. By proper energy band engineering, we demonstrated a flexible floating gate memory device with larger memory window and controlled threshold voltage shifts.
Collapse
Affiliation(s)
- Su-Ting Han
- Department of Physics and Materials Science and Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong , Hong Kong, Hong Kong SAR
| | | | | | | | | | | | | | | |
Collapse
|
26
|
Zhou Y, Han ST, Sonar P, Roy VAL. Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism. Sci Rep 2014; 3:2319. [PMID: 23900459 PMCID: PMC3728587 DOI: 10.1038/srep02319] [Citation(s) in RCA: 97] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/17/2013] [Accepted: 07/05/2013] [Indexed: 11/22/2022] Open
Abstract
The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both electrons and holes efficiently. Here, we achieved large memory window and distinct multilevel data storage by utilizing the phenomena of ambipolar charge trapping mechanism. As fabricated flexible memory devices display five well-defined data levels with good endurance and retention properties showing potential application in printed electronics.
Collapse
Affiliation(s)
- Ye Zhou
- Department of Physics and Materials Science and Center of Super-Diamond and Advanced Films COSDAF, City University of Hong Kong, Hong Kong SAR
| | | | | | | |
Collapse
|
27
|
Wang C, Wang J, Li PZ, Gao J, Tan SY, Xiong WW, Hu B, Lee PS, Zhao Y, Zhang Q. Synthesis, Characterization, and Non-Volatile Memory Device Application of an N-Substituted Heteroacene. Chem Asian J 2014; 9:779-83. [DOI: 10.1002/asia.201301547] [Citation(s) in RCA: 114] [Impact Index Per Article: 11.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/18/2013] [Indexed: 11/11/2022]
|
28
|
Wang J, Nagano K, Shimada T, Kitamura T. Strain-mediated multilevel ferroelectric random access memory operating through a magnetic field. RSC Adv 2014. [DOI: 10.1039/c4ra07013e] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Three hysteresis loops between the toroidal moment and vorticity in the ferroelectric memory cell with four stable vortex states.
Collapse
Affiliation(s)
- Jie Wang
- Department of Engineering Mechanics
- School of Aeronautics and Astronautics
- Zhejiang University
- Hangzhou 310027, China
- Department of Mechanical Engineering and Science
| | - Koyo Nagano
- Department of Mechanical Engineering and Science
- Kyoto University
- Nishikyo-ku, Japan
| | - Takahiro Shimada
- Department of Mechanical Engineering and Science
- Kyoto University
- Nishikyo-ku, Japan
| | - Takayuki Kitamura
- Department of Mechanical Engineering and Science
- Kyoto University
- Nishikyo-ku, Japan
| |
Collapse
|
29
|
Solution processed molecular floating gate for flexible flash memories. Sci Rep 2013; 3:3093. [PMID: 24172758 PMCID: PMC3813938 DOI: 10.1038/srep03093] [Citation(s) in RCA: 46] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/29/2013] [Accepted: 10/11/2013] [Indexed: 11/09/2022] Open
Abstract
Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F16CuPc trapped electrons alone due to abundant electron density. All the devices exhibited large memory window, long charge retention time, good endurance property and excellent flexibility. The obtained results have great potential for application in large area flexible electronic devices.
Collapse
|
30
|
Han ST, Zhou Y, Roy VAL. Towards the development of flexible non-volatile memories. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2013; 25:5425-49. [PMID: 24038631 DOI: 10.1002/adma.201301361] [Citation(s) in RCA: 193] [Impact Index Per Article: 17.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2013] [Revised: 05/25/2013] [Indexed: 05/10/2023]
Abstract
Flexible non-volatile memories have attracted tremendous attentions for data storage for future electronics application. From device perspective, the advantages of flexible memory devices include thin, lightweight, printable, foldable and stretchable. The flash memories, resistive random access memories (RRAM) and ferroelectric random access memory/ferroelectric field-effect transistor memories (FeRAM/FeFET) are considered as promising candidates for next generation non-volatile memory device. Here, we review the general background knowledge on device structure, working principle, materials, challenges and recent progress with the emphasis on the flexibility of above three categories of non-volatile memories.
Collapse
Affiliation(s)
- Su-Ting Han
- Department of Physics and Materials Science and Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR
| | | | | |
Collapse
|
31
|
Shallcross RC, Körner PO, Maibach E, Köhnen A, Meerholz K. A photochromic diode with a continuum of intermediate states: towards high density multilevel storage. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2013; 25:4807-4813. [PMID: 23847026 DOI: 10.1002/adma.201301286] [Citation(s) in RCA: 20] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2013] [Revised: 05/14/2013] [Indexed: 06/02/2023]
Abstract
A continuum of intermediate states (current levels) is demonstrated for an organic diode utilizing a photochromic (dithienylethene) switching layer. Specific intermediate states can be attained by controlling the fraction of closed isomer (X) in the transduction layer, affording a novel methodology for multilevel storage applications. The analog response of the device is discussed in terms of the concentration and morphology of closed dithienylethene isomer, which can be accessed via optical and electrical switching reactions.
Collapse
|
32
|
Gu PY, Zhou F, Gao J, Li G, Wang C, Xu QF, Zhang Q, Lu JM. Synthesis, Characterization, and Nonvolatile Ternary Memory Behavior of a Larger Heteroacene with Nine Linearly Fused Rings and Two Different Heteroatoms. J Am Chem Soc 2013; 135:14086-9. [DOI: 10.1021/ja408208c] [Citation(s) in RCA: 182] [Impact Index Per Article: 16.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2022]
Affiliation(s)
- Pei-Yang Gu
- College of Chemistry,
Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
- School of Materials
Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Feng Zhou
- College of Chemistry,
Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Junkuo Gao
- School of Materials
Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Gang Li
- School of Materials
Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Chengyuan Wang
- School of Materials
Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Qing-Feng Xu
- College of Chemistry,
Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Qichun Zhang
- School of Materials
Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Jian-Mei Lu
- College of Chemistry,
Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| |
Collapse
|
33
|
Zhou Y, Han ST, Huang LB, Huang J, Yan Y, Zhou L, Roy VAL. A low voltage programmable unipolar inverter with a gold nanoparticle monolayer on plastic. NANOTECHNOLOGY 2013; 24:205202. [PMID: 23609318 DOI: 10.1088/0957-4484/24/20/205202] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
A programmable low voltage unipolar inverter with saturated-load configuration has been demonstrated on a plastic substrate. A self-assembled monolayer of gold (Au) nanoparticles was inserted into the dielectric layer acting as a charge trapping layer. The inverter operated well with supply voltages of < - 5 V and the switching voltage was tuned in a wide range under low program/erase bias. The retention and endurance test at ambient conditions confirmed the reliability of the inverter. Furthermore, the programmable behavior was maintained well at various bending states, demonstrating the adequate flexibility of our devices.
Collapse
Affiliation(s)
- Ye Zhou
- Centre of Super-Diamond and Advanced Films-COSDAF and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR
| | | | | | | | | | | | | |
Collapse
|
34
|
Zhou Y, Han ST, Xu ZX, Roy VAL. The strain and thermal induced tunable charging phenomenon in low power flexible memory arrays with a gold nanoparticle monolayer. NANOSCALE 2013; 5:1972-1979. [PMID: 23361624 DOI: 10.1039/c2nr32579a] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
The strain and temperature dependent memory effect of organic memory transistors on plastic substrates has been investigated under ambient conditions. The gold (Au) nanoparticle monolayer was prepared and embedded in an atomic layer deposited aluminum oxide (Al(2)O(3)) as the charge trapping layer. The devices exhibited low operation voltage, reliable memory characteristics and long data retention time. Experimental analysis of the programming and erasing behavior at various bending states showed the relationship between strain and charging capacity. Thermal-induced effects on these memory devices have also been analyzed. The mobility shows ~200% rise and the memory window increases from 1.48 V to 1.8 V when the temperature rises from 20 °C to 80 °C due to thermally activated transport. The retention capability of the devices decreases with the increased working temperature. Our findings provide a better understanding of flexible organic memory transistors under various operating temperatures and validate their applications in various areas such as temperature sensors, temperature memory or advanced electronic circuits. Furthermore, the low temperature processing procedures of the key elements (Au nanoparticle monolayer and Al(2)O(3) dielectric layer) could be potentially integrated with large area flexible electronics.
Collapse
Affiliation(s)
- Ye Zhou
- Centre of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China
| | | | | | | |
Collapse
|
35
|
Han ST, Zhou Y, Wang C, He L, Zhang W, Roy VAL. Layer-by-layer-assembled reduced graphene oxide/gold nanoparticle hybrid double-floating-gate structure for low-voltage flexible flash memory. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2013; 25:872-793. [PMID: 23125077 DOI: 10.1002/adma.201203509] [Citation(s) in RCA: 75] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/22/2012] [Revised: 09/25/2012] [Indexed: 06/01/2023]
Affiliation(s)
- Su-Ting Han
- Department of Physics and Materials Science and Center of Super-Diamond and Advanced Films-COSDAF, City University of Hong Kong, Kowloong Tong, Hong Kong SAR
| | | | | | | | | | | |
Collapse
|
36
|
Mas-Torrent M, Rovira C, Veciana J. Surface-confined electroactive molecules for multistate charge storage information. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2013; 25:462-468. [PMID: 23427338 DOI: 10.1002/adma.201201510] [Citation(s) in RCA: 33] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
Bi-stable molecular systems with potential for applications in binary memory devices are raising great interest for device miniaturization. Particular appealing are those systems that operate with electrical inputs since they are compatible with existing electronic technologies. The processing of higher memory densities in these devices could be accomplished by increasing the number of memory states in each cell, although this strategy has not been much explored yet. Here we highlight the recent advances devoted to the fabrication of charge-storage molecular surface-confined devices exhibiting multiple states. Mainly, this goal has been realized immobilizing a variety (or a combination) of electroactive molecules on a surface, although alternative approaches employing non-electroactive systems have also been described. Undoubtedly, the use of molecules with chemically tunable properties and nanoscale dimensions are raising great hopes for the devices of the future in which molecules can bring new perspectives such as multistability.
Collapse
Affiliation(s)
- M Mas-Torrent
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) and Networking Research Center on Bioengineering Biomaterials and Nanomedicine (CIBER-BBN), Campus de la UAB, 08193-Cerdanyola del Vallés, Barcelona, Spain.
| | | | | |
Collapse
|
37
|
Ye C, Peng Q, Li M, Luo J, Tang Z, Pei J, Chen J, Shuai Z, Jiang L, Song Y. Multilevel Conductance Switching of Memory Device through Photoelectric Effect. J Am Chem Soc 2012; 134:20053-9. [DOI: 10.1021/ja305354y] [Citation(s) in RCA: 100] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Changqing Ye
- Beijing National Laboratory
for Molecular Sciences (BNLMS), Key Laboratory of Organic Solids,
Laboratory of New Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Qian Peng
- Beijing National Laboratory
for Molecular Sciences (BNLMS), Key Laboratory of Organic Solids,
Laboratory of New Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Mingzhu Li
- Beijing National Laboratory
for Molecular Sciences (BNLMS), Key Laboratory of Organic Solids,
Laboratory of New Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Jia Luo
- Beijing National Laboratory
for Molecular Sciences (BNLMS), Key Laboratory of Organic Solids,
Laboratory of New Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Zhengming Tang
- College of Chemistry and Molecular
Engineering, Peking University, Beijing
100871, P. R. China
| | - Jian Pei
- College of Chemistry and Molecular
Engineering, Peking University, Beijing
100871, P. R. China
| | - Jianming Chen
- Beijing National Laboratory
for Molecular Sciences (BNLMS), Key Laboratory of Organic Solids,
Laboratory of New Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Zhigang Shuai
- Beijing National Laboratory
for Molecular Sciences (BNLMS), Key Laboratory of Organic Solids,
Laboratory of New Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Lei Jiang
- Beijing National Laboratory
for Molecular Sciences (BNLMS), Key Laboratory of Organic Solids,
Laboratory of New Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Yanlin Song
- Beijing National Laboratory
for Molecular Sciences (BNLMS), Key Laboratory of Organic Solids,
Laboratory of New Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| |
Collapse
|
38
|
Hwang SK, Bae I, Kim RH, Park C. Flexible non-volatile ferroelectric polymer memory with gate-controlled multilevel operation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2012; 24:5910-5914. [PMID: 22887686 DOI: 10.1002/adma.201201831] [Citation(s) in RCA: 31] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/07/2012] [Indexed: 06/01/2023]
Abstract
A flexible field-effect transistor with a poly(3-hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) insulator exhibits gate-voltage-controllable multilevel non-volatile memory characteristics with highly reliable data retention and endurance.
Collapse
Affiliation(s)
- Sun Kak Hwang
- Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749, Republic of Korea
| | | | | | | |
Collapse
|
39
|
Han ST, Zhou Y, Xu ZX, Huang LB, Yang XB, Roy VAL. Microcontact printing of ultrahigh density gold nanoparticle monolayer for flexible flash memories. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2012; 24:3556-3561. [PMID: 22678769 DOI: 10.1002/adma.201201195] [Citation(s) in RCA: 36] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2012] [Revised: 04/30/2012] [Indexed: 06/01/2023]
Abstract
A uniform monolayer of alkanethiol-protected gold nanoparticle arrays with ultrahigh density have been used as microcontact-printable charge-trapping layers for the application in flexible flash memories. The new devices are compared to two reference devices with a floating gate created by thermal evaporation and electrostatic self-assembly, and show a large memory window, long retention times and good endurance properties.
Collapse
Affiliation(s)
- Su-Ting Han
- Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR
| | | | | | | | | | | |
Collapse
|
40
|
Zhou Y, Han ST, Xu ZX, Roy VAL. Controlled ambipolar charge transport through a self-assembled gold nanoparticle monolayer. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2012; 24:1247-1251. [PMID: 22298461 DOI: 10.1002/adma.201104375] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2011] [Revised: 12/23/2011] [Indexed: 05/31/2023]
Abstract
An active mechanism for controlling ambipolar charge transport is developed based on self-assembled monolayers of gold nanoparticles. Electron and hole currents are manipulated by controlling the gate bias in order to overcome the intrinsic material limitations. The endurance and retention measurements confirm that this method exhibits good electrical reliability and stability. This solution process approach has potential for applications in large-area printed electronic devices.
Collapse
Affiliation(s)
- Ye Zhou
- Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, PR of China
| | | | | | | |
Collapse
|
41
|
Lian SL, Liu CL, Chen WC. Conjugated fluorene based rod-coil block copolymers and their PCBM composites for resistive memory switching devices. ACS APPLIED MATERIALS & INTERFACES 2011; 3:4504-4511. [PMID: 21999193 DOI: 10.1021/am201190s] [Citation(s) in RCA: 19] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
We report the fabrication and characterization of polymer resistive switching memory devices fabricated from conjugated rod-coil poly[2,7-(9,9-dihexylfluorene)]-block-poly(2-vinylpyridine) diblock copolymers (PF-b-P2VP) and their hybrids with [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM). PF(10)-b-P2VP(37) and PF(10)-b-P2VP(68)-based devices exhibited the volatile static random access memory (SRAM) characteristic with an ON/OFF current ratio up to 1 × 10(7), which was explained by the trapping/back transferring of charge carrier. PF(10)-b-P2VP(68) had a longer holding time in the ON state than PF(10)-b-P2VP(37) because of the delayed back transfer of trapping carriers originally from the longer P2VP blocks. The PCBM aggregated size in the composite thin films were effectively reduced by PF-b-P2VP compared to the homopolymer of PF or P2VP, because of the supramolecular charge transfer interaction, as evidenced by absorption and photoluminescence spectra. Their PCBM/PF-b-P2VP composite devices changed from the nonvolatile write-once-read-many-times (WORM) memory to the conductor behavior as the PCBM composition was increased. The electric-field induced charge transfer effect enabled the electrical bistable states for the applications in digital WORM memory device. The tunable memory characteristics through the block length ratio of block copolymers or PCBM composition provided the solution-processable charge storage nanomaterials for programmable high density memory device with a reducing bit cell size.
Collapse
Affiliation(s)
- Shiang-Ling Lian
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | | | | |
Collapse
|
42
|
Muralidharan G, Bhat N, Santhanam V. Scalable processes for fabricating non-volatile memory devices using self-assembled 2D arrays of gold nanoparticles as charge storage nodes. NANOSCALE 2011; 3:4575-4579. [PMID: 21987060 DOI: 10.1039/c1nr10884k] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
We propose robust and scalable processes for the fabrication of floating gate devices using ordered arrays of 7 nm size gold nanoparticles as charge storage nodes. The proposed strategy can be readily adapted for fabricating next generation (sub-20 nm node) non-volatile memory devices.
Collapse
Affiliation(s)
- Girish Muralidharan
- Department of Chemical Engineering, Indian Institute of Science, Bangalore, 560012, India
| | | | | |
Collapse
|