Reliable and uniform thin-film transistor arrays based on inkjet-printed polymer semiconductors for full color reflective displays

The solvent effect on the morphology and molecular ordering of benzothiadiazole-based small molecule for inkjet-printed thin-film transistors

A small molecule organic semiconductor, D(D'-A-D')₂ comprising benzothiadiazole as an acceptor, 3-hexylthiophene, and thiophene as donors, was successfully synthesized. X-ray diffraction and atomic force microscopy were used to investigate the effect of a dual solvent system with varying ratios of chloroform and toluene on film crystallinity and film morphology via inkjet printing. The film prepared with a chloroform to toluene ratio of 1.5 : 1 showed better performance with improved crystallinity and morphology due to having enough time to control the arrangement of molecules. In addition, by optimizing ratios of CHCl₃ to toluene, the inkjet-printed TFT based on 3HTBTT using a CHCl₃ and toluene ratio of 1.5 : 1 was successfully fabricated and exhibited a hole mobility of 0.01 cm² V^-1 s^-1 due to the improved molecular ordering of the 3HTBTT film.

Stretchable conductors for stretchable field-effect transistors and functional circuits

Stretchable electronics have received intense attention due to their broad application prospects in many areas, and can withstand large deformations and form close contact with curved surfaces. Stretchable conductors are vital components of stretchable electronic devices used in wearables, soft robots, and human-machine interactions. Recent advances in stretchable conductors have motivated basic scientific and technological research efforts. Here, we outline and analyse the development of stretchable conductors in transistors and circuits, and examine advances in materials, device engineering, and preparation technologies. We divide the existing approaches to constructing stretchable transistors with stretchable conductors into the following two types: geometric engineering and intrinsic stretchability engineering. Finally, we consider the challenges and outlook in this field for delivering stretchable electronics.

Droplet-Based Techniques for Printing of Functional Inks for Flexible Physical Sensors

Printed electronics (PE) is an emerging technology that uses functional inks to print electrical components and circuits on variety of substrates. This technology has opened up new possibilities to fabricate flexible, bendable, and form-fitting devices at low-cost and fast speed. There are different printing technologies in use, among which droplet-based techniques are of great interest as they provide the possibility of printing computer-controlled design patterns with high resolution, and greater production flexibility. Nanomaterial inks form the heart of this technology, enabling different functionalities. To this end, intensive research has been carried out on formulating inks with conductive, semiconductive, magnetic, piezoresistive, and piezoelectric properties. Here, a detailed landscape view on different droplet-based printing technologies (inkjet, aerosol jet, and electrohydrodynamic jet) is provided, with comprehensive discussion on their working principals. This is followed by a detailed research overview of different functional inks (metal, carbon, polymer, and ceramic). Different sintering methods and common substrates being used in printed electronics are also discussed, followed by an in-depth review of different physical sensors fabricated by droplet-based techniques. Finally, the challenges facing the field are considered and a perspective on possible ways to overcome them is provided.

Shellac Films as a Natural Dielectric Layer for Enhanced Electron Transport in Polymer Field-Effect Transistors

Shellac, a natural polymer resin obtained from the secretions of lac bugs, was evaluated as a dielectric layer in organic field-effect transistors (OFETs) on the basis of donor (D)-acceptor (A)-type conjugated semiconducting copolymers. The measured dielectric constant and breakdown field of the shellac layer were ∼3.4 and 3.0 MV/cm, respectively, comparable with those of a poly(4-vinylphenol) (PVP) film, a commonly used dielectric material. Bottom-gate/top-contact OFETs were fabricated with shellac or PVP as the dielectric layer and one of three different D-A-type semiconducting copolymers as the active layer: poly(cyclopentadithiophene- alt-benzothiadiazole) with p-type characteristics, poly(naphthalene-bis(dicarboximide)- alt-bithiophene) [P(NDI2OD-T2)] with n-type characteristics, and poly(dithienyl-diketopyrrolopyrrole- alt-thienothiophene) [P(DPP2T-TT)] with ambipolar characteristics. The electrical characteristics of the fabricated OFETs were then measured. For all active layers, OFETs with a shellac film as the dielectric layer exhibited a better mobility than those with PVP. For example, the mobility of the OFET with a shellac dielectric and n-type P(NDI2OD-T2) active layer was approximately 2 orders of magnitude greater than that of the corresponding OFET with a PVP insulating layer. When P(DPP2T-TT) served as the active layer, the OFET with shellac as the dielectric exhibited ambipolar characteristics, whereas the corresponding OFET with the PVP dielectric operated only in hole-accumulation mode. The total density of states was analyzed using technology computer-aided design simulations. The results revealed that compared with the OFETs with PVP as the dielectric, the OFETs with shellac as the dielectric had a lower trap-site density at the polymer semiconductor/dielectric interface and much fewer acceptor-like trap sites acting as electron traps. These results demonstrate that shellac is a suitable dielectric material for D-A-type semiconducting copolymer-based OFETs, and the use of shellac as a dielectric layer facilitates electron transport at the interface with D-A-type copolymer channels.

Thiophene-Thiazole-Based Semiconducting Copolymers for High-Performance Polymer Field-Effect Transistors

We report a newly synthesized donor (D)-acceptor (A)type semiconducting copolymer, consisting of thiophene as an electron-donating unit and thiazole as an electron-accepting unit (PQTBTz-TT-C8) for the active layer of the organic field-effect transistors (OFETs). Specifically, this study investigates the structure and electrical property relationships of PQTBTz-TT-C8 with comprehensive analyses on the charge-transporting properties corresponding to the spin rate of the spin coater during the formation of the PQTBTz-TT-C8 film. The crystallinity of PQTBTz-TT-C8 films is examined with grazing incidence X-ray diffraction. Temperature-dependent transfer measurements of the OFETs are conducted to extract the density of states (DOS) and characterize the charge-transport properties. Comparative analyses on charge transports within the framework of the physical model, based on polaron hopping and Gaussian DOS, reveal that the prefactors of both physical charge-transport models are independent of the spin-coating condition for the films. For staggered structural transistors, however, the thickness of the PQTBTz-TT-C8 films, which strongly affect the series resistance along the charge-transfer path in a vertical direction, is changed in accordance with the spin-coating rate. In other words, the spin-coating rate of the PQTBTz-TT-C8 films influences the thickness of the polymer films, yet any significant changes in the crystallinity of the film or electronic coupling between the neighboring molecules upon the spin-coating condition were barely noticeable. Because the PQTBTz-TT-C8 backbone chains inside the thin film are stacked up with the edge-on, the series resistances are changed according to the thickness of the film and thus the performance of the device varies depending on the thickness.

Chemical sintering of direct-written silver nanowire flexible electrodes under room temperature

Transparent and flexible electrodes on cost effective plastic substrates for wearable electronics have attract great attention recently. Due to the conductivity and flexibility in network form, metal nanowire is regarded as one of the most promising candidates for flexible electrode fabrication. Prior to application, low temperature joining of nanowire processes are required to reduce the resistance of electrodes and simultaneously maintain the dimensionality and uniformity of those nanowires. In the present work, we presented an innovative, robust and cost effective method to minimize the heat effect to plastic substrate and silver nanowires which allows silver nanowire electrodes been directly written on polycarbonate substrate and sintered by different electrolyte solutions at room temperature or near. It has been rigorously demonstrated that the resistance of silver nanowire electrodes has been reduced by 90% after chemical sintering at room temperature due to the joining of silver nanowires at junction areas. After ∼1000 bending cycles, the measured resistance of silver nanowire electrode was stable during both up-bending and down-bending states. The changes of silver nanowires after sintering were characterized using x-ray photoelectron spectroscopy and transmission electron microscopy and a sintering mechanism was proposed and validated. This direct-written silver nanowire electrode with good performance has broad applications in flexible electronics fabrication and packaging.

An all-inkjet-printed flexible UV photodetector

In this work, a novel concept of the all-inkjet-printed flexible photodetectors based on ZnO nanocrystals with high performance was proposed and demonstrated with emphasis on the influence of different post-treatments including UV light irradiation and high temperature annealing. The photodetectors based on UV-treated ZnO nanocrystal films exhibit a responsivity and an on/off ratio as high as 0.14 A W^-1 and >10³, respectively, which are better than the thermally treated devices. The high performance of ZnO nanocrystal-based photodetectors originates from unique band-edge modulation among the nanoparticles, where the existence of Schottky barriers leads to a low dark current and gives rise to a fast photoelectric response. The photodetector is capable of 500 bending cycles, and almost no degradation is observed. The as-obtained all-printable devices open up the possibility of fabricating a low-cost, solution processed, flexible, and large-area integrated optoelectronic sensor circuitry for future practical applications.

Quantum-Dot Light-Emitting Diodes for Large-Area Displays: Towards the Dawn of Commercialization

Quantum dots are a unique class of emitters with size-tunable emission wavelengths, saturated emission colors, near-unity luminance efficiency, inherent photo- and thermal- stability and excellent solution processability. Quantum dots have been used as down-converters for back-lighting in liquid-crystal displays to improve color gamut, leading to the booming of quantum-dot televisions in consumer market. In the past few years, efficiency and lifetime of electroluminescence devices based on quantum dots achieved tremendous progress. These encouraging facts foreshadow the commercialization of quantum-dot light-emitting diodes (QLEDs), which promises an unprecedented generation of cost-effective, large-area, energy-saving, wide-color-gamut, ultra-thin and flexible displays. Here we provide a Progress Report, covering interdisciplinary aspects including material chemistry of quantum dots and charge-transporting layers, optimization and mechanism studies of prototype devices and processing techniques to produce large-area and high-resolution red-green-blue pixel arrays. We also identify a few key challenges facing the development of active-matrix QLED displays.

Carbon Nanotube Macroelectronics for Active Matrix Polymer-Dispersed Liquid Crystal Displays

Active matrix liquid crystal display (AMLCD) is the most widely used display technology nowadays. Transparent display is one of the emerging technologies to provide people with more features such as displaying images on transparent substrates and simultaneously enabling people to see the scenery behind the panel. Polymer-dispersed liquid crystal (PDLC) is a possible active matrix transparent display technology due to its high transparency, good visibility, and low power consumption. Carbon nanotubes (CNTs) with excellent mobility, high transparency, and room-temperature processing compatibility are ideal materials for the driver circuit of the PDLC display. Here, we report the monolithic integration of CNT thin-film transistor driver circuit with PDLC pixels. We studied the transmission properties of the PDLC pixels and characterized the performance of CNT thin-film transistors. Furthermore, we successfully demonstrated active matrix seven-segment PDLC displays using CNT driver transistors. Our achievements open up opportunities for future nanotube-based, flexible thin-film transparent display electronics.

Tailoring the Dielectric Layer Structure for Enhanced Performance of Organic Field-Effect Transistors: The Use of a Sandwiched Polar Dielectric Layer

To investigate the origins of hydroxyl groups in a polymeric dielectric and its applications in organic field-effect transistors (OFETs), a polar polymer layer was inserted between two polymethyl methacrylate (PMMA) dielectric layers, and its effect on the performance as an organic field-effect transistor (OFET) was studied. The OFETs with a sandwiched dielectric layer of poly(vinyl alcohol) (PVA) or poly(4-vinylphenol) (PVP) containing hydroxyl groups had shown enhanced characteristics compared to those with only PMMA layers. The field-effect mobility had been raised more than 10 times in n-type devices (three times in the p-type one), and the threshold voltage had been lowered almost eight times in p-type devices (two times in the n-type). The on-off ratio of two kinds of devices had been enhanced by almost two orders of magnitude. This was attributed to the orientation of hydroxyl groups from disordered to perpendicular to the substrate under gate-applied voltage bias, and additional charges would be induced by this polarization at the interface between the semiconductor and dielectrics, contributing to the accumulation of charge transfer.

Fabrication of Transparent Multilayer Circuits by Inkjet Printing

Conductive microcables embedded in a transparent film are fabricated by inkjet printing silver-nanoparticle ink into a liquid poly(dimethylsiloxane) (PDMS) precursor substrate. By controlling the spreading of the ink droplet and the rheological properties of the liquid substrate, transparent multilayer circuits composed of high-resolution embedded cables are achieved using a commercial inkjet printer. This facile strategy provides a new avenue for inkjet printing of highly integrated and transparent electronics.

Gate-Bias Stability Behavior Tailored by Dielectric Polymer Stereostructure in Organic Transistors

Understanding charge trapping in a polymer dielectric is critical to the design of high-performance organic field-effect transistors (OFETs). We investigated the OFET stability as a function of the dielectric polymer stereostructure under a gate bias stress and during long-term operation. To this end, iso-, syn-, and atactic poly(methyl methacrylate) (PMMA) polymers with identical molecular weights and polydispersity indices were selected. The PMMA stereostructure was found to significantly influence the charge trapping behavior and trap formation in the polymer dielectrics. This influence was especially strong in the bulk region rather than in the surface region. The regular configurational arrangements (isotactic > syntactic > atactic) of the pendant groups on the PMMA backbone chain facilitated closer packing between the polymer interchains and led to a higher crystallinity of the polymer dielectric, which caused a reduction in the free volumes that act as sites for charge trapping and air molecule absorption. The PMMA dielectrics with regular stereostructures (iso- and syn-stereoisomers) exhibited more stable OFET operation under bias stress compared to devices prepared using irregular a-PMMA in both vacuum and air.

Development of high-performance printed organic field-effect transistors and integrated circuits

In this perspective article, we provide a recent overview of the route to realize high-performance printed organic transistors and integrated circuits.

Inkjet printing short-channel polymer transistors with high-performance and ultrahigh photoresponsivity

Inkjet-printed short-channel polymer transistors exhibit a high performance (μavg = 1.20 cm(2) V(-1) s(-1) ). With a 50 μm orifice nozzle, polymer transistors with a sub-micrometer (700 nm) channel length are mass-fabricated with good uniformity and reproducibility. In addition, owing to the device geometry, an ultrahigh photoresponsivity up to 10(6) A W(-1) is achieved, which realizes economical, lithography-free photodetectors.

Electron transport characteristics in nanosegregated columnar phases of perylene tetracarboxylic bisimide derivatives bearing oligosiloxane chains

An electron transport process in columnar phases of perylene tetracarboxylic bisimide derivatives is analyzed based on the one-dimensional Gaussian disorder model.

Sorting of large-diameter semiconducting carbon nanotube and printed flexible driving circuit for organic light emitting diode (OLED)

A novel approach was developed to sort a large-diameter semiconducting single-walled carbon nanotube (sc-SWCNT) based on copolyfluorene derivative with high yield. High purity sc-SWCNTs inks were obtained by wrapping arc-discharge SWCNTs with poly[2,7-(9,9-dioctylfluorene)-alt-4,7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole] (PFO-DBT) aided by sonication and centrifugation in tetrahydrofuran (THF). The sorted sc-SWCNT inks and nanosilver inks were used to print top-gated thin-film transistors (TFTs) on flexible substrates with an aerosol jet printer. The printed TFTs demonstrated low operating voltage, small hysteresis, high on-state current (up to 10(-3) A), high mobility and on-off ratio. An organic light emitting diode (OLED) driving circuit was constructed based on the printed TFTs, which exhibited high on-off ratio up to 10(4) and output current up to 3.5 × 10(-4) A at V(scan) = -4.5 V and Vdd = 0.8 V. A single OLED was switched on with the driving circuit, showing the potential as backplanes for active matrix OLED applications.