Towards the development of flexible non-volatile memories

A Highly Electrostrictive Salt Cocrystal and the Piezoelectric Nanogenerator Application of Its 3D-Printed Polymer Composite

Ionic cocrystals with hydrogen bonding can form exciting materials with enhanced optical and electronic properties. We present a highly moisture-stable ammonium salt cocrystal [CH3C6H4CH(CH3)NH2][CH3C6H4CH(CH3)NH3][PF6] ((p-TEA)(p-TEAH)·PF6) crystallizing in the polar monoclinic C2 space group. The asymmetry in (p-TEA)(p-TEAH)·PF6 was induced by its chiral substituents, while the polar order and structural stability were achieved by using the octahedral PF6- anion and the consequent formation of salt cocrystal. The ferroelectric properties of (p-TEA)(p-TEAH)·PF6 were confirmed through P-E loop measurements. Piezoresponse force microscopy (PFM) enabled the visualization of its domain structure with characteristic "butterfly" and hysteresis loops associated with ferro- and piezoelectric properties. Notably, (p-TEA)(p-TEAH)·PF6 exhibits a large electrostrictive coefficient (Q33) value of 2.02 m4 C-2, higher than those found for ceramic-based materials and comparable to that of polyvinylidene difluoride. Furthermore, the composite films of (p-TEA)(p-TEAH)·PF6 with polycaprolactone (PCL) polymer and its gyroid-shaped 3D-printed composite scaled-up device, 3DP-Gy, were prepared and evaluated for piezoelectric energy-harvesting functionality. A high output voltage of 22.8 V and a power density of 118.5 μW cm-3 have been recorded for the 3DP-Gy device. Remarkably, no loss in voltage outputs was observed for the (p-TEA)(p-TEAH)·PF6 devices even after exposure to 99% relative humidity, showcasing their utility under extremely humid conditions.

Two-Dimensional Os2Se3 Nanosheet: A Ferroelectric Metal with Room-Temperature Ferromagnetism

Two-dimensional (2D) ferroelectric metals (FEMs) possess intriguing characteristics, such as unconventional superconductivity and the nonlinear anomalous Hall effect. However, their occurrence is exceedingly rare due to mutual repulsion between ferroelectricity and metallicity. In addition, further incorporating other features like ferromagnetism into FEMs to enhance their functionalities poses a significantly greater challenge. Here, via first-principles calculations, we demonstrate a case of an FEM that features a coexistence of room-temperature ferromagnetism, ferroelectricity, and metallicity in a thermodynamically stable 2D Os2Se3. It presents a vertical electric polarization of 3.00 pC/m that exceeds those of most FEMs and a moderate polarization switching barrier of 0.22 eV per formula unit. Moreover, 2D Os2Se3 exhibits robust ferromagnetism (Curie temperature TC ≈ 527 K) and a sizable magnetic anisotropy energy (-30.87 meV per formula unit). Furthermore, highly magnetization-dependent electrical conductivity is revealed, indicative of strong magnetoelectric coupling. Berry curvature calculation suggests that the FEM might exhibit nontrivial band topology.

A Multistate Non-Volatile Photoelectronic Memory Device Based on Ferroelectric Tunnel Junction with Modulable Visible Light Photoresponse

Recently, certain ferroelectric tunnel junctions (FTJs) exhibit non-volatile modulations on photoresponse as well as tunneling electroresistance (TER) effects related to ferroelectric polarization states. From the opposite perspective, the corresponding polarization states can be read by detecting the levels of the photocurrent. In this study, we fabricate a novel amorphous selenium (a-Se)/PbZr0.2Ti0.8O3 (PZT)/Nb-doped SrTiO3 (NSTO) heterojunction, which exhibits a high TER of 3 × 106. Unlike perovskite oxide FTJs with a limited ultraviolet response, the introduction of a narrow bandgap semiconductor (a-Se) enables self-powered photoresponse within the visible light range. The self-powered photoresponse characteristics can be significantly modulated by ferroelectric polarization. The photocurrent after writing polarization voltages of +4 and -5 V exhibits a 1200% increase. Furthermore, the photocurrent could be clearly distinguished after writing stepwise polarization voltages, and then a multistate information storage is designed with nondestructive readout capacity under light illumination. This work holds great significance in advancing the development of ferroelectric multistate photoelectronic memories with high storage density and expanding the design possibilities for FTJs.

Optical readout of charge carriers stored in a 2D memory cell of monolayer WSe2

Owing to their superior charge retaining and transport characteristics, 2D transition metal dichalcogenides are investigated for practical applications in various memory-cell structures. Herein, we fabricated a quasi-one-terminal 2D memory cell by partially depositing a WSe2 monolayer on an Au electrode, which can be manipulated to achieve efficient charge injection upon the application or removal of external bias. Furthermore, the amount of charge carriers stored in the memory cell could be optically probed because of its close correlation with the fluorescence efficiency of WSe2, allowing us to achieve an electron retention time of ∼300 s at the cryogenic temperature of 4 K. Accordingly, the simplified device structure and the non-contact optical readout of the stored charge carriers present new research opportunities for 2D memory cells in terms of both fundamental mechanism studies and practical development for integrated nanophotonic devices.

Attaining inhibition of sneak current and versatile logic operations in a singular halide perovskite memristive device by introducing appropriate interface barriers

Emerging resistive switching devices hold the potential to realize densely packed passive nanocrossbar arrays, suitable for deployment as random access memory devices (ReRAMs) in both embedded and high-capacity storage applications. In this study, we have engineered ReRAMs comprising ITO/(UVO-treated) amorphous ZnO (a-ZnO)/MAPbI3/Ag which effectively mitigate cross-talk currents without additional components. Significantly, we successfully executed a comprehensive set of 12 distinct 2-input sequential logic functions in a single halide perovskite ReRAM unit for the first time. Furthermore, these logic functions are devoid of any dependency on external light sources, entail merely 1 or 2 logic steps, and showcase symmetrical operability. A superior resistive switching behavior was achieved by harmonizing the charge transport within the bulk MAPbI3 and the tunneling barriers at the interfaces. The outcomes indicate progress in mitigating cross-talk and executing multiple logic functions within a single halide perovskite ReRAM unit, offering a new perspective for the advancement of halide perovskite ReRAMs.

Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory

Facing the era of information explosion and the advent of artificial intelligence, there is a growing demand for information technologies with huge storage capacity and efficient computer processing. However, traditional silicon-based storage and computing technology will reach their limits and cannot meet the post-Moore information storage requirements of ultrasmall size, ultrahigh density, flexibility, biocompatibility, and recyclability. As a response to these concerns, polymer-based resistive memory materials have emerged as promising candidates for next-generation information storage and neuromorphic computing applications, with the advantages of easy molecular design, volatile and non-volatile storage, flexibility, and facile fabrication. Herein, we first summarize the memory device structures, memory effects, and memory mechanisms of polymers. Then, the recent advances in polymer resistive switching materials, including single-component polymers, polymer mixtures, 2D covalent polymers, and biomacromolecules for resistive memory devices, are highlighted. Finally, the challenges and future prospects of polymer memory materials and devices are discussed. Advances in polymer-based memristors will open new avenues in the design and integration of high-performance switching devices and facilitate their application in future information technology.

Interfacial electronic states and self-formed asymmetric Schottky contacts in polar α-In2Se3/Au contacts

In recent years, the two-dimensional (2D) semiconductor α-In2Se3 has great potential for applications in the fields of electronics and optoelectronics due to its spontaneous iron electrolysis properties. Through ab initio electronic structure calculations and quantum transport simulations, the interface properties and transport properties of α-In2Se3/Au contacts with different polarization directions are studied, and a two-dimensional α-In2Se3 asymmetric metal contact design is proposed. When α-In2Se3 is polarized upward, it forms an n-type Schottky contact with Au. While when α-In2Se3 is polarized downward, it forms a p-type Schottky contact with Au. More importantly, significant rectification effect is found in the asymmetric Au/α-In2Se3/Au field-effect transistor. The carrier transports under positive and negative bias voltages are found to be dominated by thermionic excitation and tunneling, respectively. These findings provide guidance for the further design of 2D α-In2Se3-based transistors.

Porous crystalline materials for memories and neuromorphic computing systems

Porous crystalline materials usually include metal-organic frameworks (MOFs), covalent organic frameworks (COFs), hydrogen-bonded organic frameworks (HOFs) and zeolites, which exhibit exceptional porosity and structural/composition designability, promoting the increasing attention in memory and neuromorphic computing systems in the last decade. From both the perspective of materials and devices, it is crucial to provide a comprehensive and timely summary of the applications of porous crystalline materials in memory and neuromorphic computing systems to guide future research endeavors. Moreover, the utilization of porous crystalline materials in electronics necessitates a shift from powder synthesis to high-quality film preparation to ensure high device performance. This review highlights the strategies for preparing porous crystalline materials films and discusses their advancements in memory and neuromorphic electronics. It also provides a detailed comparative analysis and presents the existing challenges and future research directions, which can attract the experts from various fields (e.g., materials scientists, chemists, and engineers) with the aim of promoting the applications of porous crystalline materials in memory and neuromorphic computing systems.

Rising of Dynamic Polyimide Materials: A Versatile Dielectric for Electrical and Electronic Applications

Polyimides (PIs) are widely used in circuit components, electrical insulators, and power systems in modern electronic devices and large electrical appliances. Electrical/mechanical damage of materials are important factors that threaten reliability and service lifetime. Dynamic (self-healable, recyclable and degradable) PIs, a promising class of materials that successfully improve electrical/mechanical properties after damage, are anticipated to solve this issue. The viewpoints and perspectives on the status and future trends of dynamic PI based on a few existing documents are shared. The main damage forms of PI dielectric materials in the application process are first introduced, and initial strategies and schemes to solve these problems are proposed. Fundamentally, the bottleneck issues faced by the development of dynamic PIs are indicated, and the relationship between various damage forms and the universality of the method is evaluated. The potential mechanism of the dynamic PI to deal with electrical damage is highlighted and several feasible prospective schemes to address electrical damage are discussed. This study is concluded by presenting a short outlook and future improvements to systems, challenges, and solutions of dynamic PI in electrical insulation. The summary of theory and practice should encourage policy development favoring energy conservation and environmental protection and promoting sustainability.

Perspectives on recent advancements in energy harvesting, sensing and bio-medical applications of piezoelectric gels

The development of next-generation bioelectronics, as well as the powering of consumer and medical devices, require power sources that are soft, flexible, extensible, and even biocompatible. Traditional energy storage devices (typically, batteries and supercapacitors) are rigid, unrecyclable, offer short-lifetime, contain hazardous chemicals and possess poor biocompatibility, hindering their utilization in wearable electronics. Therefore, there is a genuine unmet need for a new generation of innovative energy-harvesting materials that are soft, flexible, bio-compatible, and bio-degradable. Piezoelectric gels or PiezoGels are a smart crystalline form of gels with polar ordered structures that belongs to the broader family of piezoelectric material, which generate electricity in response to mechanical stress or deformation. Given that PiezoGels are structurally similar to hydrogels, they offer several advantages including intrinsic chirality, crystallinity, degree of ordered structures, mechanical flexibility, biocompatibility, and biodegradability, emphasizing their potential applications ranging from power generation to bio-medical applications. Herein, we describe recent examples of new functional PiezoGel materials employed for energy harvesting, sensing, and wound dressing applications. First, this review focuses on the principles of piezoelectric generators (PEGs) and the advantages of using hydrogels as PiezoGels in energy and biomedical applications. Next, we provide a detailed discussion on the preparation, functionalization, and fabrication of PiezoGel-PEGs (P-PEGs) for the applications of energy harvesting, sensing and wound healing/dressing. Finally, this review concludes with a discussion of the current challenges and future directions of P-PEGs.

Organic multilevel (opto)electronic memories towards neuromorphic applications

In the past decades, neuromorphic computing has attracted the interest of the scientific community due to its potential to circumvent the von Neumann bottleneck. Organic materials, owing to their fine tunablility and their ability to be used in multilevel memories, represent a promising class of materials to fabricate neuromorphic devices with the key requirement of operation with synaptic weight. In this review, recent studies of organic multilevel memory are presented. The operating principles and the latest achievements obtained with devices exploiting the main approaches to reach multilevel operation are discussed, with emphasis on organic devices using floating gates, ferroelectric materials, polymer electrets and photochromic molecules. The latest results obtained using organic multilevel memories for neuromorphic circuits are explored and the major advantages and drawbacks of the use of organic materials for neuromorphic applications are discussed.

Polymeric Memristor Based Artificial Synapses with Ultra-Wide Operating Temperature

Neuromorphic electronics, being inspired by how the brain works, hold great promise to the successful implementation of smart artificial systems. Among several neuromorphic hardware issues, a robust device functionality under extreme temperature is of particular importance for practical applications. Given that the organic memristors for artificial synapse applications are demonstrated under room temperature, achieving a robust device performance at extremely low or high temperature is still utterly challenging. In this work, the temperature issue is addressed by tuning the functionality of the solution-based organic polymeric memristor. The optimized memristor demonstrates a reliable performance under both the cryogenic and high-temperature environments. The unencapsulated organic polymeric memristor shows a robust memristive response under test temperature ranging from 77 to 573 K. Utilizing X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary-ion mass spectrometry (ToF-SIMS) depth profiling, the device working mechanism is unveiled by comparing the compositional profiles of the fresh and written organic polymeric memristors. A reversible ion migration induced by an applied voltage contributes to the characteristic switching behavior of the memristor. Herein, both the robust memristive response achieved at extreme temperatures and the verified device working mechanism will remarkably accelerate the development of memristors in neuromorphic systems.

Highly degenerate 2D ferroelectricity in pore decorated covalent/metal organic frameworks

Two-dimensional (2D) ferroelectricity, a fundamental concept in low-dimensional physics, serves as the basis of non-volatile information storage and various electronic devices. Conventional 2D ferroelectric (FE) materials are usually two-fold degenerate, meaning that they can only store two logical states. In order to break such limitation, a new concept of highly degenerate ferroelectricity with multiple FE states (more than 2) coexisting in a single 2D material is proposed. This is obtained through the asymmetrical decoration of porous covalent/metal organic frameworks (COFs/MOFs). Using first-principles calculations and Monte Carlo (MC) simulations, Li-decorated 2D Cr(pyz)₂ is systematically explored as a prototype of highly degenerate 2D FE materials. We show that 2D FE Li_0.5Cr(pyz)₂ and LiCr(pyz)₂ are four-fold and eight-fold degenerate, respectively, with sizable spontaneous electric polarization that can be switched across low transition barriers. In particular, the coupling between neighbouring electric dipoles in LiCr(pyz)₂ induces novel ferroelectricity-controlled ferroelastic transition and direction-controllable hole transport channels. Moreover, three-fold and six-fold degenerate ferroelectricity is also demonstrated in P-decorated g-C₃N₄ and Ru-decorated C₂N, respectively. Our work presents a general route to obtain highly degenerate 2D ferroelectricity, which goes beyond the two-state paradigm of traditional 2D FE materials and substantially broadens the applications of 2D FE compounds.

High-Performance Phototransistor Memory with an Ultrahigh Memory Ratio Conferred Using Hydrogen-Bonded Supramolecular Electrets

As the research of photonic electronics thrives, the enhanced efficacy from an optic unit cell can considerably improve the performance of an optoelectronic device. In this regard, organic phototransistor memory with a fast programming/readout and a distinguished memory ratio produces an advantageous outlook to fulfill the demand for advanced applications. In this study, a hydrogen-bonded supramolecular electret is introduced into the phototransistor memory, which comprises porphyrin dyes, meso-tetra(4-aminophenyl)porphine, meso-tetra(p-hydroxyphenyl)porphine, and meso-tetra(4-carboxyphenyl)porphine (TCPP), and insulated polymers, poly(4-vinylpyridine) and poly(4-vinylphenol) (PVPh). To combine the optical absorption of porphyrin dyes, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) is selected as a semiconducting channel. The porphyrin dyes serve as the ambipolar trapping moiety, while the insulated polymers form a barrier to stabilize the trapped charges by forming hydrogen-bonded supramolecules. We find that the hole-trapping capability of the device is determined by the electrostatic potential distribution in the supramolecules, whereas the electron-trapping capability and the surface proton doping originated from hydrogen bonding and interfacial interactions. Among them, PVPh:TCPP with an optimal hydrogen bonding pattern in the supramolecular electret produces the highest memory ratio of 1.12 × 10⁸ over 10⁴ s, which is the highest performance among the reported achievements. Our results suggest that the hydrogen-bonded supramolecular electret can enhance the memory performance by fine-tuning their bond strength and cast light on a potential pathway to future photonic electronics.

High-Performance C60 Coupled Ferroelectric Enhanced MoS2 Nonvolatile Memory

Nonvolatile memory (NVM) devices based on two-dimensional (2D) materials have recently attracted widespread attention due to their high-density integration potential and the ability to be applied in computing-in-memory systems in the post-Moore era. Considering the high current on/off ratio, programmable threshold voltage, nonvolatile multilevel memory state, and extended logic functions, plenty of breakthroughs related to ferroelectric field-effect transistors (FeFETs), one of the most important NVM devices, have been made in the past decade. Among them, FETs coupled with organic ferroelectric films such as P(VDF-TrFE) displayed properties of remarkable robustness, easy preparation, and low cost. However, the dipoles of the P(VDF-TrFE) film cannot be flipped smoothly at low voltage, impeding the further application of organic FeFET. In this paper, we proposed a high-performance FeFET based on monolayer MoS₂ coupled with C₆₀ doped ferroelectric copolymer P(VDF-TrFE). The inserted C₆₀ molecules enhanced the alignment of the dipoles effectively at low voltage, allowing the modified device to demonstrate a large memory window (∼16 V), high current on/off ratio (>10⁶), long retention time (>10 000 s), and remarkable endurance under the reduced operating voltage. In addition, the in situ logic application can be realized by constructing facile device interconnection without building complex complementary semiconductor circuits. Our results are expected to pave the way for future low-consumption computing-in-memory applications based on high-quality 2D FeFETs.

Biological function simulation in neuromorphic devices: from synapse and neuron to behavior

As the boom of data storage and processing, brain-inspired computing provides an effective approach to solve the current problem. Various emerging materials and devices have been reported to promote the development of neuromorphic computing. Thereinto, the neuromorphic device represented by memristor has attracted extensive research due to its outstanding property to emulate the brain's functions from synaptic plasticity, sensory-memory neurons to some intelligent behaviors of living creatures. Herein, we mainly review the progress of these brain functions mimicked by neuromorphic devices, concentrating on synapse (i.e. various synaptic plasticity trigger by electricity and/or light), neurons (including the various sensory nervous system) and intelligent behaviors (such as conditioned reflex represented by Pavlov's dog experiment). Finally, some challenges and prospects related to neuromorphic devices are presented.

Impact of Planar and Vertical Organic Field-Effect Transistors on Flexible Electronics

The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET- and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.

Renormalizing Antiferroelectric Nanostripes in β'-In2Se3 via Optomechanics

Antiferroelectric (AFE) materials have attracted a great deal of attention owing to their high energy conversion efficiency and good tunability. Recently, an exotic two-dimensional AFE material, a β'-In₂Se₃ monolayer that could host atomically thin AFE nanostripe domains, has been experimentally synthesized and theoretically examined. In this work, we apply first-principles calculations and theoretical estimations to predict that light irradiation can control the nanostripe width of such a system. We suggest that an intermediate near-infrared light (below the bandgap) could effectively harness the thermodynamic Gibbs free energy and thermodynamic stability, and the AFE nanostripe width will gradually decrease. We also propose to use linearly polarized light above the bandgap to generate an AFE nanostripe-specific photocurrent, providing an all-optical pump-probe setup for such AFE nanostripe width phase transitions.

Fully Photoswitchable Phototransistor Memory Comprising Perovskite Quantum Dot-Based Hybrid Nanocomposites as a Photoresponsive Floating Gate

Tremendous research efforts have been dedicated into the field of photoresponsive nonvolatile memory devices owing to their advantages of fast transmitting speed, low latency, and power-saving property that are suitable for replacing current electrical-driven electronics. However, the reported memory devices still rely on the assistance of gate bias to program them, and a real fully photoswitchable transistor memory is still rare. Herein, we report a phototransistor memory device comprising polymer/perovskite quantum dot (QD) hybrid nanocomposites as a photoresponsive floating gate. The perovskite QDs offer an effective discreteness with an excellent photoresponse that are suitable for photogate application. In addition, a series of ultraviolet (UV)-sensitive insulating polymer hosts were designed to investigate the effect of UV light on the memory behavior. We found that a fully photoswitchable memory device was fulfilled by using the independent and sequential photoexcitation between a UV-sensitive polymer host and a visible light-sensitive QD photogates, which produced decent photoresponse, memory switchability, and highly stable memory retention with a memory ratio of 10⁴ over 10⁴ s. This study not only unraveled the mystery in the fully photoswitchable functionality of nonvolatile memory but also enlightened their potential in the next-generation electronics for light-fidelity application.

Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films

We report on the development of hybrid organic-inorganic material-based flexible memristor devices made by a fast and simple electrochemical fabrication method. The devices consist of a bilayer of poly(methyl methacrylate) (PMMA) and Te-rich GeSbTe chalcogenide nanoscale thin films sandwiched between Ag top and TiN bottom electrodes on both Si and flexible polyimide substrates. These hybrid memristors require no electroforming process and exhibit reliable and reproducible bipolar resistive switching at low switching voltages under both flat and bending conditions. Multistate switching behavior can also be achieved by controlling the compliance current (CC). We attribute the switching between the high resistance state (HRS) and low resistance state (LRS) in the devices to the formation and rupture of conductive Ag filaments within the hybrid PMMA/GeSbTe matrix. This work provides a promising route to fabricate flexible memory devices through an electrodeposition process for application in flexible electronics.

Progress of Materials and Devices for Neuromorphic Vision Sensors

The latest developments in bio-inspired neuromorphic vision sensors can be summarized in 3 keywords: smaller, faster, and smarter. (1) Smaller: Devices are becoming more compact by integrating previously separated components such as sensors, memory, and processing units. As a prime example, the transition from traditional sensory vision computing to in-sensor vision computing has shown clear benefits, such as simpler circuitry, lower power consumption, and less data redundancy. (2) Swifter: Owing to the nature of physics, smaller and more integrated devices can detect, process, and react to input more quickly. In addition, the methods for sensing and processing optical information using various materials (such as oxide semiconductors) are evolving. (3) Smarter: Owing to these two main research directions, we can expect advanced applications such as adaptive vision sensors, collision sensors, and nociceptive sensors. This review mainly focuses on the recent progress, working mechanisms, image pre-processing techniques, and advanced features of two types of neuromorphic vision sensors based on near-sensor and in-sensor vision computing methodologies.

Isomeric dibenzooctazethrene diradicals for high-performance air-stable organic field-effect transistors

Realizing both high-performance and air-stability is key to advancing singlet-diradical-based semiconductors to practical applications and realizing their material potential associated with their open-shell nature. Here a concise synthetic route toward two stable dibenzooctazethrene isomers, DBOZ1 and DBOZ2, was demonstrated. In the crystalline phase, DBOZ2 exhibits two-dimensional brick wall packing with a high degree of intermolecular electronic coupling, leading to a record-breaking hole mobility of 3.5 cm2 V-1 s-1 for singlet diradical transistors, while retaining good device stability in the ambient air.

Polymer Nanocomposite Dielectrics: Understanding the Matrix/Particle Interface

Polymer nanocomposite dielectrics possess exceptional electric properties that are absent in the pristine dielectric polymers. The matrix/particle interface in polymer nanocomposite dielectrics is suggested to play decisive roles on the bulk material performance. Herein, we present a critical overview of recent research advances and important insights in understanding the matrix/particle interfacial characteristics in polymer nanocomposite dielectrics. The primary experimental strategies and state-of-the-art characterization techniques for resolving the local property-structure correlation of the matrix/particle interface are dissected in depth, with a focus on the characterization capabilities of each strategy or technique that other approaches cannot compete with. Limitations to each of the experimental strategy are evaluated as well. In the last section of this Review, we summarize and compare the three experimental strategies from multiple aspects and point out their advantages and disadvantages, critical issues, and possible experimental schemes to be established. Finally, the authors' personal viewpoints regarding the challenges of the existing experimental strategies are presented, and potential directions for the interface study are proposed for future research.

Low-Dimensional Metal-Halide Perovskites as High-Performance Materials for Memory Applications

Metal-halide perovskites have drawn profuse attention during the past decade, owing to their excellent electrical and optical properties, facile synthesis, efficient energy conversion, and so on. Meanwhile, the development of information storage technologies and digital communications has fueled the demand for novel semiconductor materials. Low-dimensional perovskites have offered a new force to propel the developments of the memory field due to the excellent physical and electrical properties associated with the reduced dimensionality. In this review, the mechanisms, properties, as well as stability and performance of low-dimensional perovskite memories, involving both molecular-level perovskites and structure-level nanostructures, are comprehensively reviewed. The property-performance correlation is discussed in-depth, aiming to present effective strategies for designing memory devices based on this new class of high-performance materials. Finally, the existing challenges and future opportunities are presented.

Large-Scale Hf0.5 Zr0.5 O2 Membranes with Robust Ferroelectricity

Hafnia-based compounds have considerable potential for use in nanoelectronics due to their compatibility with complementary metal-oxide-semiconductor devices and robust ferroelectricity at nanoscale sizes. However, the unexpected ferroelectricity in this class of compounds often remains elusive due to the polymorphic nature of hafnia, as well as the lack of suitable methods for the characterization of the mixed/complex phases in hafnia thin films. Herein, the preparation of centimeter-scale, crack-free, freestanding Hf_0.5 Zr_0.5 O₂ (HZO) nanomembranes that are well suited for investigating the local crystallographic phases, orientations, and grain boundaries at both the microscopic and mesoscopic scales is reported. Atomic-level imaging of the plan-view crystallographic patterns shows that more than 80% of the grains are the ferroelectric orthorhombic phase, and that the mean equivalent diameter of these grains is about 12.1 nm, with values ranging from 4 to 50 nm. Moreover, the ferroelectric orthorhombic phase is stable in substrate-free HZO membranes, indicating that strain from the substrate is not responsible for maintaining the polar phase. It is also demonstrated that HZO capacitors prepared on flexible substrates are highly uniform, stable, and robust. These freestanding membranes provide a viable platform for the exploration of HZO polymorphic films with complex structures and pave the way to flexible nanoelectronics.

A Hierarchically Encoded Data Storage Device with Controlled Transiency

In the era of information explosion, high-security and high-capacity data storage technology attracts more and more attention. Physically transient electronics, a form of electronics that can physically disappear with precisely controlled degradation behaviors, paves the way for secure data storage. Herein, the authors report a silk-based hierarchically encoded data storage device (HEDSD) with controlled transiency. The HEDSD can store electronic, photonic, and optical information simultaneously by synergistically integrating a resistive switching memory (ReRAM), a terahertz metamaterial device, and a diffractive optical element, respectively. These three data storage units have shared materials and structures but diverse encoding mechanisms, which increases the degree of complexity and capacity of stored information. Silk plays an important role as a building material in the HEDSD thanks to its excellent mechanical, optical, and electrical properties and controlled transiency as a naturally extracted protein. By controlling the degradation rate of storage units of the silk-based HEDSD, different degradation modes of the HEDSD, and multilevel information encryption/decryption have been realized. Compared with the conventional memory devices, as-reported silk-based HEDSD can store multilevel complex information and realize multilevel information encryption and decryption, which is highly desirable to fulfill the future demands of secure memory systems and implantable storage devices.

High-performance five-ring-fused organic semiconductors for field-effect transistors

Organic molecular semiconductors have been paid great attention due to their advantages of low-temperature processability, low fabrication cost, good flexibility, and excellent electronic properties. As a typical example of five-ring-fused organic semiconductors, a single crystal of pentacene shows a high mobility of up to 40 cm² V^-1 s^-1, indicating its potential application in organic electronics. However, the photo- and optical instabilities of pentacene make it unsuitable for commercial applications. But, molecular engineering, for both the five-ring-fused building block and side chains, has been performed to improve the stability of materials as well as maintain high mobility. Here, several groups (thiophenes, pyrroles, furans, etc.) are introduced to design and replace one or more benzene rings of pentacene and construct novel five-ring-fused organic semiconductors. In this review article, ∼500 five-ring-fused organic prototype molecules and their derivatives are summarized to provide a general understanding of this catalogue material for application in organic field-effect transistors. The results indicate that many five-ring-fused organic semiconductors can achieve high mobilities of more than 1 cm² V^-1 s^-1, and a hole mobility of up to 18.9 cm² V^-1 s^-1 can be obtained, while an electron mobility of 27.8 cm² V^-1 s^-1 can be achieved in five-ring-fused organic semiconductors. The HOMO-LUMO levels, the synthesis process, the molecular packing, and the side-chain engineering of five-ring-fused organic semiconductors are analyzed. The current problems, conclusions, and perspectives are also provided.

Metal-containing organic compounds for memory and data storage applications

With the upcoming trend of Big Data era, some new types of memory technologies have emerged as substitutes for the traditional Si-based semiconductor memory devices, which are encountering severe scaling down technical obstacles. In particular, the resistance random access memory (RRAM) and magnetic random access memory (MRAM) hold great promise for the in-memory computing, which are regarded as the optimal strategy and pathway to solve the von Neumann bottleneck by high-throughput in situ data processing. As far as the active materials in RRAM and MRAM are concerned, organic semiconducting materials have shown increasing application perspectives in memory devices due to their rich structural diversity and solution processability. With the introduction of metal elements into the backbone of molecules, some new properties and phenomena will emerge accordingly. Consequently, the RRAM and MRAM devices based on metal-containing organic compounds (including the small molecular metal complexes, metallopolymers, metal-organic frameworks (MOFs) and organic-inorganic-hybrid perovskites (OIHPs)) have been widely explored and attracted intense attention. In this review, we highlight the fundamentals of RRAM and MRAM, as well as the research progress of the applications of metal-containing organic compounds in both RRAM and MRAM. Finally, we discuss the challenges and future directions for the research of organic RRAM and MRAM.

Enabling Distributed Intelligence with Ferroelectric Multifunctionalities

Distributed intelligence involving a large number of smart sensors and edge computing are highly demanded under the backdrop of increasing cyber-physical interactive applications including internet of things. Here, the progresses on ferroelectric materials and their enabled devices promising energy autonomous sensors and smart systems are reviewed, starting with an analysis on the basic characteristics of ferroelectrics, including high dielectric permittivity, switchable spontaneous polarization, piezoelectric, pyroelectric, and bulk photovoltaic effects. As sensors, ferroelectrics can directly convert the stimuli to signals without requiring external power supply in principle. As energy transducers, ferroelectrics can harvest multiple forms of energy with high reliability and durability. As capacitors, ferroelectrics can directly store electrical charges with high power and ability of pulse-mode signal generation. Nonvolatile memories derived from ferroelectrics are able to realize digital processors and systems with ultralow power consumption, sustainable operation with intermittent power supply, and neuromorphic computing. An emphasis is made on the utilization of the multiple extraordinary functionalities of ferroelectrics to enable material-critical device innovations. The ferroelectric characteristics and synergistic functionality combinations are invaluable for realizing distributed sensors and smart systems with energy autonomy.

Bottom-up synthesized crystalline boron quantum dots with nonvolatile memory effects through one-step hydrothermal polymerization of ammonium pentaborane and boric acid

Crystalline BQDs are synthesized through a bottom-up strategy and used to fabricate a BQD–PVP memory device with nonvolatile rewritable memory effects.

Low-Dimensional In2Se3 Compounds: From Material Preparations to Device Applications

Nanostructured In₂Se₃ compounds have been widely used in electronics, optoelectronics, and thermoelectrics. Recently, the revelation of ferroelectricity in low-dimensional (low-D) In₂Se₃ has caused a new upsurge of scientific interest in nanostructured In₂Se₃ and advanced functional devices. The ferroelectric, thermoelectric, and optoelectronic properties of In₂Se₃ are highly correlated with the crystal structure. In this review, we summarize the crystal structures and electronic band structures of the widely interested members of the In₂Se₃ compound family. Recent achievements in the preparation of low-D In₂Se₃ with controlled phases are discussed in detail. General principles for obtaining pure-phased In₂Se₃ nanostructures are described. The excellent ferroelectric, optoelectronic, and thermoelectric properties having been demonstrated using nanostructured and heterostructured In₂Se₃ with different phases are also summarized. Progress and challenges on the applications of In₂Se₃ nanostructures in nonvolatile memories, photodetectors, gas sensors, strain sensors, and photovoltaics are discussed in detail. In the last part of this review, perspectives on the challenges and opportunities in the preparation and applications of In₂Se₃ materials are presented.

Suzuki-Miyaura Catalyst-Transfer Polycondensation of Triolborate-Type Carbazole Monomers

Herein, we report the Suzuki–Miyaura catalyst-transfer polycondensation (SCTP) of triolborate-type carbazole monomers, i.e., potassium 3-(6-bromo-9-(2-octyldodecyl)-9H-carbazole-2-yl)triolborate (M1) and potassium 2-(7-bromo-9-(2-octyldodecyl)-9H-carbazole-2-yl) triolborate (M2), as an efficient and versatile approach for precisely synthesizing poly[9-(2-octyldodecyl)-3,6-carbazole] (3,6-PCz) and poly[9-(2-octyldodecyl)-2,7-carbazole] (2,7-PCz), respectively. The SCTP of triolborate-type carbazole monomers was performed in a mixture of THF/H₂O using an initiating system consisted of 4-iodobenzyl alcohol, Pd₂(dba)₃•CHCl₃, and t-Bu₃P. In the SCTP of M1, cyclic by-product formation was confirmed, as reported for the corresponding pinacolboronate-type monomer. By optimizing the reaction temperature and reaction time, we successfully synthesized linear end-functionalized 3,6-PCz for the first time. The SCTP of M2 proceeded with almost no side reaction, yielding 2,7-PCz with a functional initiator residue at the α-chain end. Kinetic and block copolymerization experiments demonstrated that the SCTP of M2 proceeded in a chain-growth and controlled/living polymerization manner. This is a novel study on the synthesis of 2,7-PCz via SCTP. By taking advantage of the well-controlled nature of this polymerization system, we demonstrated the synthesis of high-molecular-weight 2,7-PCzs (M_n = 5–38 kg mol⁻¹) with a relatively narrow Ð_M (1.35–1.48). Furthermore, we successfully synthesized fluorene/carbazole copolymers as well as 2,7-PCz-containing diblock copolymers, demonstrating the versatility of the present polymerization system as a novel synthetic strategy for well-defined polycarbazole-based materials.

Flexible Lead-Free Ba0.5Sr0.5TiO3/0.4BiFeO3-0.6SrTiO3 Dielectric Film Capacitor with High Energy Storage Performance

Ferroelectric thin film capacitors have triggered great interest in pulsed power systems because of their high-power density and ultrafast charge–discharge speed, but less attention has been paid to the realization of flexible capacitors for wearable electronics and power systems. In this work, a flexible Ba_0.5Sr_0.5TiO₃/0.4BiFeO₃-0.6SrTiO₃ thin film capacitor is synthesized on mica substrate. It possesses an energy storage density of W_rec ~ 62 J cm⁻³, combined with an efficiency of η ~ 74% due to the moderate breakdown strength (3000 kV cm⁻¹) and the strong relaxor behavior. The energy storage performances for the film capacitor are also very stable over a broad temperature range (−50–200 °C) and frequency range (500 Hz–20 kHz). Moreover, the W_rec and η are stabilized after 10⁸ fatigue cycles. Additionally, the superior energy storage capability can be well maintained under a small bending radius (r = 2 mm), or after 10⁴ mechanical bending cycles. These results reveal that the Ba_0.5Sr_0.5TiO₃/0.4BiFeO₃-0.6SrTiO₃ film capacitors in this work have great potential for use in flexible microenergy storage systems.

Flexible Hard Coatings with Self-Evolution Behavior in a Low Earth Orbit Environment

Lightweight, long lifetime, and flexible polymer membrane-based structures, which are tightly folded on the ground and then unfolded in space, suffer from repeated bending before launching and fatal erosion on exposure to atomic oxygen (AO) in a low Earth orbit (LEO). Although various AO-resistant coatings have been developed, a coating that can simultaneously meet the critical requirements for the mechanical robustness and long-term protection of polymer membranes is rare. Here, we fabricated a coating with mechanical robustness and long-term space endurance, starting from an inorganic polymer precursor. A hybrid coating with a nanoscale polymer/silica bicontinuous phase is first prepared on the ground, which exhibits outstanding flexibility and excellent abrasion resistance. Then, the coating shows an in situ self-evolution behavior under AO and ultraviolet (UV) synergism to afford dense and crack-free silica coating with outstanding endurance. Our strategy displays great potential for protecting deployable membrane structures serving in the LEO.

Manipulating ferroelectric behaviors via electron-beam induced crystalline defects

Ferroelectric nanoplates are attractive for applications in nanoelectronic devices. Defect engineering has been an effective way to control and manipulate ferroelectric properties in nanoscale devices. Defects can act as pinning centers for ferroelectric domain wall motion, altering the switching properties and domain dynamics of ferroelectrics. However, there is a lack of detailed investigation on the interactions between defects and domain walls in ferroelectric nanoplates due to the limitation of previous characterization techniques, which impedes the development of defect engineering in ferroelectric nanodevices. In this study, we applied in situ biasing transmission electron microscopy to explore how dislocation loops, which were judiciously introduced into barium titanate nanoplates via electron beam irradiation, affect the motion of ferroelectric domain walls. The results show that the motion was dramatically suppressed by these localized defects, because of the local strain fields induced by the defects. The pinning effect can be further enhanced by multiple domain walls embedded with defect arrays. These results indicate the possibility of manipulating domain switching in ferroelectric nanoplates via the electron beam.

Ultralow-switching current density multilevel phase-change memory on a flexible substrate

[Figure: see text].

Near-Infrared Artificial Synapses for Artificial Sensory Neuron System

The computing based on artificial neuron network is expected to break through the von Neumann bottleneck of traditional computer, and to greatly improve the computing efficiency, displaying a broad prospect in the application of artificial visual system. In the specific structural layout, it is a common method to connect the discrete photodetector with the artificial neuron in series, which enhances the complexity of signal recognition, conversion and storage. In this work, organic small molecule IR-780 iodide is inserted into the memory device as both the charge trapping layer and near-infrared (NIR) photoresponsive film. Through electrical and optical regulation, artificial synaptic functions including short-term plasticity, long-term plasticity, and spike rate dependence are realized. In the established artificial sensory neuron system, NIR optical pulses can significantly improve the spiking rate. Moreover, the spiking neural networks are further constructed by simulation for handwritten digit classification. This research may contribute to the development of light driven neural robots, optical signal encryption, and neural computing.

Visible Light Stimulated Bistable Photo-Switching in Defect Engineered Metal-Organic Frameworks

The incorporation of photoactive donor-acceptor Stenhouse adduct (DASA) moieties into Metal-Organic Frameworks (MOFs) provides a new route to the development of visible light switching materials. Herein, a DUT-5 mixed-linker defect series was exploited to produce a derivative group of DASA-modified materials via postsynthetic modification (PSM). The photoactive MOFs exhibited conversion stimulated by visible wavelengths and were stable following multiple cycles. Thermodynamic and metastable states persisted over an extended time period.

Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM

In order to improve the electrical performance of resistive random access memory (RRAM), sulfur (S)-doping technology for HfOx-based RRAM is systematically investigated in this paper. HfOx films with different S-doping contents are achieved by atmospheric pressure chemical vapor deposition (APCVD) under a series of preparation temperatures. The effect of S on crystallinity, surface topography, element composition of HfOx thin films and resistive switching (RS) performance of HfOx-based devices are discussed. Compared with an undoped device, the V_SET/V_RESET of the S-doped device with optimal S content (~1.66 At.%) is reduced, and the compliance current (Icc) is limited from 1 mA to 100 μA. Moreover, it also has high uniformity of resistance and voltage, stable endurance, good retention characteristics, fast response speed (SET 6.25 μs/RESET 7.50 μs) and low energy consumption (SET 9.08 nJ/RESET 6.72 nJ). Based on X-ray photoelectron spectroscopy (XPS) data and fitting of the high/low resistance state (HRS/LRS) conduction behavior, a switching mechanism is considered to explain the formation and rupture of conductive filaments (CFs) composed of oxygen vacancies in undoped and S-doped HfOx-based devices. Doping by sulfur is proposed to introduce the appropriate concentration oxygen vacancies into HfOx film and suppress the random formation of CFs in HfOx-based device, and thus improve the performance of the TiN/HfOx/ITO device.

Perpendicularly magnetized Co/Pd-based magneto-resistive heterostructures on flexible substrates

Flexible magneto-resistive heterostructures have received a great deal of attention over the past few years as they allow for new product paradigms that are not possible with conventional rigid substrates. While the progress and development of systems with longitudinal magnetic anisotropy on non-planar substrates has been remarkable, flexible magneto-resistive heterostructures with perpendicular magnetic anisotropy (PMA) have never been studied despite the possibility to obtain additional functionality and improved performance. To fill this gap, flexible PMA Co/Pd-based giant magneto-resistive (GMR) spin-valve stacks were prepared by using an innovative transfer-and-bonding strategy exploiting the low adhesion of a gold underlayer to SiO _x /Si(100) substrates. The approach allows overcoming the limits of the direct deposition on commonly used polymer substrates, whose high surface roughness and low melting temperature could hinder the growth of complex heterostructures with perpendicular magnetic anisotropy. The obtained PMA flexible spin-valves show a sizeable GMR ratio (∼1.5%), which is not affected by the transfer process, and a high robustness against bending as indicated by the slight change of the magneto-resistive properties upon bending, thus allowing for their integration on curved surfaces and the development of a novel class of advanced devices based on flexible magneto-resistive structures with perpendicular magnetic anisotropy. Besides endowing the family of flexible electronics with PMA magneto-resistive heterostructures, the exploitation of the results might apply to high temperature growth processes and to the fabrication of other functional and flexible multilayer materials engineered at the nanoscale.

Flexible Artificial Sensory Systems Based on Neuromorphic Devices

Emerging flexible artificial sensory systems using neuromorphic electronics have been considered as a promising solution for processing massive data with low power consumption. The construction of artificial sensory systems with synaptic devices and sensing elements to mimic complicated sensing and processing in biological systems is a prerequisite for the realization. To realize high-efficiency neuromorphic sensory systems, the development of artificial flexible synapses with low power consumption and high-density integration is essential. Furthermore, the realization of efficient coupling between the sensing element and the synaptic device is crucial. This Review presents recent progress in the area of neuromorphic electronics for flexible artificial sensory systems. We focus on both the recent advances of artificial synapses, including device structures, mechanisms, and functions, and the design of intelligent, flexible perception systems based on synaptic devices. Additionally, key challenges and opportunities related to flexible artificial perception systems are examined, and potential solutions and suggestions are provided.

Recent Process of Flexible Transistor-Structured Memory

Flexible transistor-structured memory (FTSM) has attracted great attention for its important role in flexible electronics. For nonvolatile information storage, FTSMs with floating-gate, charge-trap, and ferroelectric mechanisms have been developed. By introducing an optical sensory module, FTSM can be operated by optical inputs to function as an optical memory transistor. As a special type of FTSM, transistor-structured artificial synapse emulates important functions of a biological synapse to mimic brain-inspired memory behaviors and nervous signal transmissions. This work reviews the recent development of the above mentioned FTSMs, with a focus on working mechanism and materials, and flexibility.