1
|
Romero FJ, Toral-Lopez A, Ohata A, Morales DP, Ruiz FG, Godoy A, Rodriguez N. Laser-Fabricated Reduced Graphene Oxide Memristors. NANOMATERIALS 2019; 9:nano9060897. [PMID: 31248215 PMCID: PMC6630327 DOI: 10.3390/nano9060897] [Citation(s) in RCA: 35] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/08/2019] [Revised: 06/15/2019] [Accepted: 06/17/2019] [Indexed: 12/20/2022]
Abstract
Finding an inexpensive and scalable method for the mass production of memristors will be one of the key aspects for their implementation in end-user computing applications. Herein, we report pioneering research on the fabrication of laser-lithographed graphene oxide memristors. The devices have been surface-fabricated through a graphene oxide coating on a polyethylene terephthalate substrate followed by a localized laser-assisted photo-thermal partial reduction. When the laser fluence is appropriately tuned during the fabrication process, the devices present a characteristic pinched closed-loop in the current-voltage relation revealing the unique fingerprint of the memristive hysteresis. Combined structural and electrical experiments have been conducted to characterize the raw material and the devices that aim to establish a path for optimization. Electrical measurements have demonstrated a clear distinction between the resistive states, as well as stable memory performance, indicating the potential of laser-fabricated graphene oxide memristors in resistive switching applications.
Collapse
Affiliation(s)
- Francisco J Romero
- Pervasive Electronics Advanced Research Laboratory, University of Granada, 18071 Granada, Spain.
- Department of Electronics and Computer Technology & Center of Research in Telecommunications and Information Technologies, University of Granada, 18071 Granada, Spain.
| | - Alejandro Toral-Lopez
- Pervasive Electronics Advanced Research Laboratory, University of Granada, 18071 Granada, Spain.
- Department of Electronics and Computer Technology & Center of Research in Telecommunications and Information Technologies, University of Granada, 18071 Granada, Spain.
| | - Akiko Ohata
- Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Kanagawa 252-5210, Japan.
| | - Diego P Morales
- Department of Electronics and Computer Technology & Center of Research in Telecommunications and Information Technologies, University of Granada, 18071 Granada, Spain.
- Biochemistry and Electronics as Sensing Technologies Group, University of Granada, 18071 Granada, Spain.
| | - Francisco G Ruiz
- Pervasive Electronics Advanced Research Laboratory, University of Granada, 18071 Granada, Spain.
- Department of Electronics and Computer Technology & Center of Research in Telecommunications and Information Technologies, University of Granada, 18071 Granada, Spain.
| | - Andres Godoy
- Pervasive Electronics Advanced Research Laboratory, University of Granada, 18071 Granada, Spain.
- Department of Electronics and Computer Technology & Center of Research in Telecommunications and Information Technologies, University of Granada, 18071 Granada, Spain.
| | - Noel Rodriguez
- Pervasive Electronics Advanced Research Laboratory, University of Granada, 18071 Granada, Spain.
- Department of Electronics and Computer Technology & Center of Research in Telecommunications and Information Technologies, University of Granada, 18071 Granada, Spain.
| |
Collapse
|
2
|
Jia Y, Sun X, Shi Z, Jiang K, Liu H, Ben J, Li D. Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1801273. [PMID: 29808580 DOI: 10.1002/smll.201801273] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2018] [Revised: 04/20/2018] [Indexed: 05/28/2023]
Abstract
Silicon carbide (SiC) with epitaxial graphene (EG/SiC) shows a great potential in the applications of electronic and photoelectric devices. The performance of devices is primarily dependent on the interfacial heterojunction between graphene and SiC. Here, the band structure of the EG/SiC heterojunction is experimentally investigated by Kelvin probe force microscopy. The dependence of the barrier height at the EG/SiC heterojunction to the initial surface state of SiC is revealed. Both the barrier height and band bending tendency of the heterojunction can be modulated by controlling the surface state of SiC, leading to the tuned carrier transport behavior at the EG/SiC interface. The barrier height at the EG/SiC(000-1) interface is almost ten times that of the EG/SiC(0001) interface. As a result, the amount of carrier transport at the EG/SiC(000-1) interface is about ten times that of the EG/SiC(0001) interface. These results offer insights into the carrier transport behavior at the EG/SiC heterojunction by controlling the initial surface state of SiC, and this strategy can be extended in all devices with graphene as the top layer.
Collapse
Affiliation(s)
- Yuping Jia
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, P. R. China
| | - Xiaojuan Sun
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, P. R. China
| | - Zhiming Shi
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, P. R. China
| | - Ke Jiang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100039, P. R. China
| | - Henan Liu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, P. R. China
| | - Jianwei Ben
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100039, P. R. China
| | - Dabing Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, P. R. China
| |
Collapse
|
3
|
Recent advances in transition-metal dichalcogenides based electrochemical biosensors: A review. Biosens Bioelectron 2017; 97:305-316. [DOI: 10.1016/j.bios.2017.06.011] [Citation(s) in RCA: 236] [Impact Index Per Article: 33.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/30/2017] [Revised: 05/25/2017] [Accepted: 06/07/2017] [Indexed: 11/22/2022]
|
4
|
Xiong M, Rong Q, Meng HM, Zhang XB. Two-dimensional graphitic carbon nitride nanosheets for biosensing applications. Biosens Bioelectron 2016; 89:212-223. [PMID: 27017520 DOI: 10.1016/j.bios.2016.03.043] [Citation(s) in RCA: 95] [Impact Index Per Article: 11.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/30/2015] [Revised: 02/20/2016] [Accepted: 03/17/2016] [Indexed: 02/02/2023]
Abstract
Two-dimensional graphitic carbon nitride nanosheets (CNNSs) with planar graphene-like structure have stimulated increasingly research interest in recent years due to their unique physicochemical properties. CNNSs possess superior stability, high fluorescence quantum yield, low-toxicity, excellent biocompatibility, unique electroluminescent and photoelectrochemical properties, which make them appropriate candidates for biosensing. In this review, we first introduce the preparation and unique properties of CNNSs, with emphasis on their superior properties for biosensing. Then, recent advances of CNNSs in photoelectrochemical biosensing, electrochemiluminescence biosensing and fluorescence biosensing are highlighted. An additional attention is paid to the marriage of CNNSs and nucleic acids, which exhibits great potentials in both biosensing and intracellular imaging. Finally, current challenges and opportunities of this 2D material are outlined. Inspired by the unique properties of CNNSs and their advantages in biological applications, we expect that more attention will be drawn to this promising 2D material and extensive applications can be found in bioanalysis and diseases diagnosis.
Collapse
Affiliation(s)
- Mengyi Xiong
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering and College of Biology, Hunan University, Changsha 410082, People's Republic of China
| | - Qiming Rong
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering and College of Biology, Hunan University, Changsha 410082, People's Republic of China
| | - Hong-Min Meng
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering and College of Biology, Hunan University, Changsha 410082, People's Republic of China; Collaborative Innovation Center of Henan Province for Green Manufacturing of Fine Chemicals, Xinxiang, Henan 453007, People's Republic of China; Key Laboratory of Green Chemical Media and Reactions, Ministry of Education, Xinxiang, Henan 453007, People's Republic of China; School of Chemistry and Chemical Engineering, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China
| | - Xiao-Bing Zhang
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering and College of Biology, Hunan University, Changsha 410082, People's Republic of China.
| |
Collapse
|
5
|
Wang L, Wu B, Jiang L, Chen J, Li Y, Guo W, Hu P, Liu Y. Growth and Etching of Monolayer Hexagonal Boron Nitride. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:4858-4864. [PMID: 26183904 DOI: 10.1002/adma.201501166] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/10/2015] [Revised: 06/21/2015] [Indexed: 06/04/2023]
Abstract
The full spectrum from attachment-kinetic-dominated to diffusion-controlled modes is revealed for the cases of monolayer h-BN chemical vapor deposition (CVD) growth and Ar/H2 etching. The sets of grown and etched structures exhibit well-defined shape evolution from Euclidian to fractal geometry. The detailed abnormal processes for merging h-BN flakes into continuous structures or film are first observed and explained.
Collapse
Affiliation(s)
- Lifeng Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, P. R. China
- Key Lab of Microsystem and Microstructure, Ministry of Education, Harbin Institute of Technology, Harbin, 150080, P. R. China
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Bin Wu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Lili Jiang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Jisi Chen
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Yongtao Li
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Wei Guo
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Pingan Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, P. R. China
- Key Lab of Microsystem and Microstructure, Ministry of Education, Harbin Institute of Technology, Harbin, 150080, P. R. China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, 100190, P. R. China
| |
Collapse
|