A general approach for fast detection of charge carrier type and conductivity difference in nanoscale materials

Laser-Fabricated Reduced Graphene Oxide Memristors

Finding an inexpensive and scalable method for the mass production of memristors will be one of the key aspects for their implementation in end-user computing applications. Herein, we report pioneering research on the fabrication of laser-lithographed graphene oxide memristors. The devices have been surface-fabricated through a graphene oxide coating on a polyethylene terephthalate substrate followed by a localized laser-assisted photo-thermal partial reduction. When the laser fluence is appropriately tuned during the fabrication process, the devices present a characteristic pinched closed-loop in the current-voltage relation revealing the unique fingerprint of the memristive hysteresis. Combined structural and electrical experiments have been conducted to characterize the raw material and the devices that aim to establish a path for optimization. Electrical measurements have demonstrated a clear distinction between the resistive states, as well as stable memory performance, indicating the potential of laser-fabricated graphene oxide memristors in resistive switching applications.

Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC

Silicon carbide (SiC) with epitaxial graphene (EG/SiC) shows a great potential in the applications of electronic and photoelectric devices. The performance of devices is primarily dependent on the interfacial heterojunction between graphene and SiC. Here, the band structure of the EG/SiC heterojunction is experimentally investigated by Kelvin probe force microscopy. The dependence of the barrier height at the EG/SiC heterojunction to the initial surface state of SiC is revealed. Both the barrier height and band bending tendency of the heterojunction can be modulated by controlling the surface state of SiC, leading to the tuned carrier transport behavior at the EG/SiC interface. The barrier height at the EG/SiC(000-1) interface is almost ten times that of the EG/SiC(0001) interface. As a result, the amount of carrier transport at the EG/SiC(000-1) interface is about ten times that of the EG/SiC(0001) interface. These results offer insights into the carrier transport behavior at the EG/SiC heterojunction by controlling the initial surface state of SiC, and this strategy can be extended in all devices with graphene as the top layer.

Two-dimensional graphitic carbon nitride nanosheets for biosensing applications

Two-dimensional graphitic carbon nitride nanosheets (CNNSs) with planar graphene-like structure have stimulated increasingly research interest in recent years due to their unique physicochemical properties. CNNSs possess superior stability, high fluorescence quantum yield, low-toxicity, excellent biocompatibility, unique electroluminescent and photoelectrochemical properties, which make them appropriate candidates for biosensing. In this review, we first introduce the preparation and unique properties of CNNSs, with emphasis on their superior properties for biosensing. Then, recent advances of CNNSs in photoelectrochemical biosensing, electrochemiluminescence biosensing and fluorescence biosensing are highlighted. An additional attention is paid to the marriage of CNNSs and nucleic acids, which exhibits great potentials in both biosensing and intracellular imaging. Finally, current challenges and opportunities of this 2D material are outlined. Inspired by the unique properties of CNNSs and their advantages in biological applications, we expect that more attention will be drawn to this promising 2D material and extensive applications can be found in bioanalysis and diseases diagnosis.

Growth and Etching of Monolayer Hexagonal Boron Nitride

The full spectrum from attachment-kinetic-dominated to diffusion-controlled modes is revealed for the cases of monolayer h-BN chemical vapor deposition (CVD) growth and Ar/H2 etching. The sets of grown and etched structures exhibit well-defined shape evolution from Euclidian to fractal geometry. The detailed abnormal processes for merging h-BN flakes into continuous structures or film are first observed and explained.