Large arrays and properties of 3-terminal graphene nanoelectromechanical switches

Dynamics of Interfacial Bubble Controls Adhesion Mechanics in Van der Waals Heterostructure

Two-dimensional van der Waals heterostructures (vdWH) can result in novel functionality that crucially depends on interfacial structure and disorder. Bubbles at the vdWH interface can modify the interfacial structure. We probe the dynamics of a bubble at the interface of a graphene-hBN vdWH by using it as the drumhead of a NEMS device because nanomechanical devices are exquisite sensors. For drums with different interfacial bubbles, we measure the evolution of the resonant frequency and spatial mode shape as a function of electrostatic pulling. We show that the hysteretic detachment of layers of vdWH is triggered by the growth of large bubbles. The bubble growth takes place due to the concentration of stress resembling the initiation of fracture. The small bubbles at the heterostructure interface do not result in delamination as they are smaller than a critical fracture length. We provide insight into frictional dynamics and interfacial fracture of vdWH.

Electrostatic pull-in application in flexible devices: A review

The electrostatic pull-in effect is a common phenomenon and a key parameter in the design of microscale and nanoscale devices. Flexible electronic devices based on the pull-in effect have attracted increasing attention due to their unique ductility. This review summarizes nanoelectromechanical switches made by flexible materials and classifies and discusses their applications in, among others, radio frequency systems, microfluidic systems, and electrostatic discharge protection. It is supposed to give researchers a more comprehensive understanding of the pull-in phenomenon and the development of its applications. Also, the review is meant to provide a reference for engineers to design and optimize devices.

Geometrically Structured Nanomaterials for Nanosensors, NEMS, and Nanosieves

Recently, geometrically structured nanomaterials have received great attention due to their unique physical and chemical properties, which originate from the geometric variation in such materials. Indeed, the use of various geometrically structured nanomaterials has been actively reported in enhanced-performance devices in a wide range of applications. Recent significant progress in the development of geometrically structured nanomaterials and associated devices is summarized. First, a brief introduction of advanced nanofabrication methods that enable the fabrication of various geometrically structured nanomaterials is given, and then the performance enhancements achieved in devices utilizing these nanomaterials, namely, i) physical and gas nanosensors, ii) nanoelectromechanical devices, and iii) nanosieves are described. For the device applications, a systematic summary of their structures, working mechanisms, fabrication methods, and output performance is provided. Particular focus is given to how device performance can be enhanced through the geometric structures of the nanomaterials. Finally, perspectives on the development of novel nanomaterial structures and associated devices are presented.

Crystallization of gas-selective nanoporous graphene by competitive etching and growth: a modeling study

A robust synthesis methodology for crystallizing nanoporous single-layer graphene hosting a high density of size-selective nanopores is urgently needed to realize the true potential of two-dimensional membranes for gas separation. Currently, there are no controllable etching techniques for single-layer graphene that are self-limiting, and that can generate size-selective nanopores at a high pore-density. In this work, we simulate a unique chemical vapor deposition based crystallization of graphene on Cu(111), in the presence of an etchant, to generate a high density (>10¹³ cm^-2) of sub-nanometer-sized, elongated nanopores in graphene. An equilibrium between the growth rate and the etching rate is obtained, and beyond a critical time, the total number of the carbon atoms and the edge carbon atoms do not change. Using an optimal first-order etching chemistry, a log-mean pore-size of 5.0 ± 1.7 (number of missing carbon atoms), and a pore-density of 3 × 10¹³ cm^-2 was achieved. A high throughput calculation route for estimating gas selectivity from ensembles of thousands of nanopores was developed. The optimized result yielded H₂/CO₂, H₂/N₂ and H₂/CH₄ selectivities larger than 200, attributing to elongated pores generated by the competitive etching and growth. The approach of competitive etching during the crystal growth is quite generic and can be applied to a number of two-dimensional materials.

Nano-electromechanical Drumhead Resonators from Two-Dimensional Material Bimorphs

Atomic membranes of monolayer 2D materials represent the ultimate limit in the size of nano-electromechanical systems. However, new properties and new functionalities emerge by looking at the interface between layers in heterostructures of 2D materials. Here, we demonstrate the integration of 2D heterostructures as tunable nano-electromechanical systems, exploring the competition between the mechanics of the ultrathin membrane and the incommensurate van der Waals interface. We fabricate electrically contacted 5 or 6 μm circular drumheads of suspended heterostructure membranes of monolayer graphene on monolayer molybdenum disulfide (MoS₂), which we call a 2D bimorph. We characterize the mechanical resonance through electrostatic actuation and laser interferometry detection. The 2D bimorphs have resonance frequencies of 5-20 MHz and quality factors of 50-700, comparable to resonators from monolayer or few-layer 2D materials. The frequencies and eigenmode shapes of the higher harmonics display split degenerate modes, showing that the 2D bimorphs behave as membranes with asymmetric tension. The devices display dynamic ranges of 44 dB, with an additional nonlinearity in the dissipation at small drive. Under electrostatic frequency tuning, devices display a small tuning of ∼20% compared with graphene resonators, which have >100%. In addition, the tuning shows a kink that deviates from the tensioned membrane model for atomic membranes and corresponds with a changing in stress of 14 mN/m. A model that accounts for this tuning behavior is the onset of interlayer slip in the heterostructure, allowing the tension in the membrane to relax. Using density functional theory simulations, we find that the change in stress at the kink is much larger than the predicted energy barrier for interlayer slip of 0.102 mN/m in an incommensurate 2D heterostructure but smaller than the energy barrier for an aligned graphene bilayer of 35 mN/m, suggesting a local pinning effect at ripples or folds in the heterostructure. Finally, we observe an asymmetry in tuning of the full width at half-maximum that does not exist in monolayer resonators. These findings demonstrate a new class of nano-electromechanical systems from 2D heterostructures and unravel the complex interaction of membrane morphology versus interlayer adhesion and slip on the mechanics of incommensurate van der Waals interfaces.

Fabrication of a three-terminal graphene nanoelectromechanical switch using two-dimensional materials

An alternative three-terminal (3T) subthermal subthreshold slope (SS) switch is required to overcome the exponential increase in leakage current with an increase in the drive current of CMOS devices. In this study, we present a 3T graphene nanoelectromechanical (3T-GNEM) switch with a physically isolated channel in the off-state by using heterogeneously stacked two-dimensional (2D) materials. Hexagonal boron nitride (h-BN) was used as a dielectric layer, and graphene was used as a the top double-clamped beam drain, gate and source electrode material; the drain, gate, and source layers were stacked vertically to achieve a small footprint. The drain to source contact is normally open with an air gap in the off-state, and the gate voltage is applied to mechanically deflect the drain terminal of the doubly clamped graphene beam to make electric contact with the source terminal for the on-state. This 3T-GNEM switch exhibits an SS as small as 10.4 mV dec-1 at room temperature, a pull-in voltage less than 6 V, and a switching voltage window of under 2 V. Since the source and drain terminals are not connected physically in the off-state, this 3T-GNEM switch is a promising candidate for future high-performance low-power logic circuits and all-2D flexible electronics.

>1000-Fold Lifetime Extension of a Nickel Electromechanical Contact Device via Graphene

Micro-/nano-electromechanical (M/NEM) switches have received significant attention as promising switching devices for a wide range of applications such as computing, radio frequency communication, and power gating devices. However, M/NEM switches still suffer from unacceptably low reliability because of irreversible degradation at the contacting interfaces, hindering adoption in practical applications and further development. Here, we evaluate and verify graphene as a contact material for reliability-enhanced M/NEM switching devices. Atomic force microscopy experiments and quantum mechanics calculations reveal that energy-efficient mechanical contact-separation characteristics are achieved when a few layers of graphene are used as a contact material on a nickel surface, reducing the energy dissipation by 96.6% relative to that of a bare nickel surface. Importantly, graphene displays almost elastic contact-separation, indicating that little atomic-scale wear, including plastic deformation, fracture, and atomic attrition, is generated. We also develop a feasible fabrication method to demonstrate a MEM switch, which has high-quality graphene as the contact material, and verify that the devices with graphene show mechanically stable and elastic-like contact properties, consistent with our nanoscale contact experiment. The graphene coating extends the switch lifetime >10³ times under hot switching conditions.

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches - materials solutions and operational conditions

This review summarizes relevant research in the field of electrostatically actuated nanobeam-based nanoelectromechanical (NEM) switches. The main switch architectures and structural elements are briefly described and compared. Investigation methods that allow for exploring coupled electromechanical interactions as well as studies of mechanically or electrically induced effects are covered. An examination of the complex nanocontact behaviour during various stages of the switching cycle is provided. The choice of the switching element and the electrode is addressed from the materials perspective, detailing the benefits and drawbacks for each. An overview of experimentally demonstrated NEM switching devices is provided, and together with their operational parameters, the reliability issues and impact of the operating environment are discussed. Finally, the most common NEM switch failure modes and the physical mechanisms behind them are reviewed and solutions proposed.

Capacitive pressure sensing with suspended graphene-polymer heterostructure membranes

We describe the fabrication and characterisation of a capacitive pressure sensor formed by an ultra-thin graphene-polymer heterostructure membrane spanning a large array of micro-cavities each up to 30 μm in diameter with 100% yield. Sensors covering an area of just 1 mm² show reproducible pressure transduction under static and dynamic loading up to pressures of 250 kPa. The measured capacitance change in response to pressure is in good agreement with calculations. Further, we demonstrate high-sensitivity pressure sensors by applying a novel strained membrane transfer and optimising the sensor architecture. This method enables suspended structures with less than 50 nm of air dielectric gap, giving a pressure sensitivity of 123 aF Pa^-1 mm^-2 over a pressure range of 0 to 100 kPa.

Adhesion, Stiffness, and Instability in Atomically Thin MoS2 Bubbles

We measured the work of separation of single and few-layer MoS₂ membranes from a SiO_x substrate using a mechanical blister test and found a value of 220 ± 35 mJ/m². Our measurements were also used to determine the 2D Young's modulus (E_2D) of a single MoS₂ layer to be 160 ± 40 N/m. We then studied the delamination mechanics of pressurized MoS₂ bubbles, demonstrating both stable and unstable transitions between the bubbles' laminated and delaminated states as the bubbles were inflated. When they were deflated, we observed edge pinning and a snap-in transition that are not accounted for by the previously reported models. We attribute this result to adhesion hysteresis and use our results to estimate the work of adhesion of our membranes to be 42 ± 20 mJ/m².

Three-Dimensional Finite Element Method Simulation of Perforated Graphene Nano-Electro-Mechanical (NEM) Switches

The miniaturization trend leads to the development of a graphene based nanoelectromechanical (NEM) switch to fulfill the high demand in low power device applications. In this article, we highlight the finite element (FEM) simulation of the graphene-based NEM switches of fixed-fixed ends design with beam structures which are perforated and intact. Pull-in and pull-out characteristics are analyzed by using the FEM approach provided by IntelliSuite software, version 8.8.5.1. The FEM results are consistent with the published experimental data. This analysis shows the possibility of achieving a low pull-in voltage that is below 2 V for a ratio below 15:0.03:0.7 value for the graphene beam length, thickness, and air gap thickness, respectively. The introduction of perforation in the graphene beam-based NEM switch further achieved the pull-in voltage as low as 1.5 V for a 250 nm hole length, 100 nm distance between each hole, and 12-number of hole column. Then, a von Mises stress analysis is conducted to investigate the mechanical stability of the intact and perforated graphene-based NEM switch. This analysis shows that a longer and thinner graphene beam reduced the von Mises stress. The introduction of perforation concept further reduced the von Mises stress at the graphene beam end and the beam center by approximately ~20⁻35% and ~10⁻20%, respectively. These theoretical results, performed by FEM simulation, are expected to expedite improvements in the working parameter and dimension for low voltage and better mechanical stability operation of graphene-based NEM switch device fabrication.

Very large scale characterization of graphene mechanical devices using a colorimetry technique

We use a scalable optical technique to characterize more than 21 000 circular nanomechanical devices made of suspended single- and double-layer graphene on cavities with different diameters (D) and depths (g). To maximize the contrast between suspended and broken membranes we used a model for selecting the optimal color filter. The method enables parallel and automatized image processing for yield statistics. We find the survival probability to be correlated with a structural mechanics scaling parameter given by D⁴/g³. Moreover, we extract a median adhesion energy of Γ = 0.9 J m^-2 between the membrane and the native SiO₂ at the bottom of the cavities.

Pauli Repulsion-Induced Expansion and Electromechanical Properties of Graphene

Because graphene has nearly zero density of states at the Dirac point, charging it must overcome Pauli repulsion. We show here that this repulsion causes graphene to expand, which is measurable with an optical edge-tracking method despite that graphene is the strongest material. The expansion increases quadratically with applied voltage as predicted by theory and has a coefficient of ∼10^-4 per V at 1 V. Graphene has many attractive properties, but it lacks piezoelectricity, which limits its electromechanical applications. The observed Pauli repulsion-induced expansion provides an alternative way to electrically control graphene dimension. It also provides a simple and direct method to measure the elastic properties of graphene and other low dimensional materials.

Colorimetry Technique for Scalable Characterization of Suspended Graphene

Previous statistical studies on the mechanical properties of chemical-vapor-deposited (CVD) suspended graphene membranes have been performed by means of measuring individual devices or with techniques that affect the material. Here, we present a colorimetry technique as a parallel, noninvasive, and affordable way of characterizing suspended graphene devices. We exploit Newton's rings interference patterns to study the deformation of a double-layer graphene drum 13.2 μm in diameter when a pressure step is applied. By studying the time evolution of the deformation, we find that filling the drum cavity with air is 2-5 times slower than when it is purged.

3D Finite Element Simulation of Graphene Nano-Electro-Mechanical Switches

In this paper, we report the finite element method (FEM) simulation of double-clamped graphene nanoelectromechanical (NEM) switches. Pull-in and pull-out characteristics are analyzed for graphene NEM switches with different dimensions and these are consistent with the experimental results. This numerical model is used to study the scaling nature of the graphene NEM switches. We show the possibility of achieving a pull-in voltage as low as 2 V for a 1.5-μm-long and 3-nm-thick nanocrystalline graphene beam NEM switch. In order to study the mechanical reliability of the graphene NEM switches, von Mises stress analysis is carried out. This analysis shows that a thinner graphene beam results in a lower von Mises stress. Moreover, a strong electrostatic force at the beam edges leads to a mechanical deflection at the edges larger than that around the center of the beam, which is consistent with the von Mises stress analysis.

Large-scale nanoelectromechanical switches based on directly deposited nanocrystalline graphene on insulating substrates

The direct growth of graphene on insulating substrate is highly desirable for the commercial scale integration of graphene due to the potential lower cost and better process control. We report a simple, direct deposition of nanocrystalline graphene (NCG) on insulating substrates via catalyst-free plasma-enhanced chemical vapor deposition at relatively low temperature of ∼800 °C. The parametric study of the process conditions that we conducted reveals the deposition mechanism and allows us to grow high quality films. Based on such film, we demonstrate the fabrication of a large-scale array of nanoelectromechanical (NEM) switches using regular thin film process techniques, with no transfer required. Thanks to ultra-low thickness, good uniformity, and high Young's modulus of ∼0.86 TPa, NCG is considered as a promising material for high performance NEM devices. The high performance is highlighted for the NCG switches, e.g. low pull-in voltage <3 V, reversible operations, minimal leakage current of ∼1 pA, and high on/off ratio of ∼10(5).

The effect of intrinsic crumpling on the mechanics of free-standing graphene

Free-standing graphene is inherently crumpled in the out-of-plane direction due to dynamic flexural phonons and static wrinkling. We explore the consequences of this crumpling on the effective mechanical constants of graphene. We develop a sensitive experimental approach to probe stretching of graphene membranes under low applied stress at cryogenic to room temperatures. We find that the in-plane stiffness of graphene is 20–100 N m⁻¹ at room temperature, much smaller than 340 N m⁻¹ (the value expected for flat graphene). Moreover, while the in-plane stiffness only increases moderately when the devices are cooled down to 10 K, it approaches 300 N m⁻¹ when the aspect ratio of graphene membranes is increased. These results indicate that softening of graphene at temperatures <400 K is caused by static wrinkling, with only a small contribution due to flexural phonons. Together, these results explain the large variation in reported mechanical constants of graphene devices and pave the way towards controlling their mechanical properties.

Free-standing graphene is inherently crumpled in the out-of-plane direction due to dynamic flexural phonons and static wrinkling. Here, the authors use optical interferometry as a delicate probe to investigate the consequences of this crumpling on the effective mechanical constants of graphene.

Size, vacancy and temperature effects on Young’s modulus of silicene nanoribbons

Young’s modulus of silicene nanoribbons: strong dependence on length, chirality as well as position, type and combination of vacancies.