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Xiao M, Wu Z, Liu G, Liao X, Yuan J, Zhou Y. Spatially Controlled Phase Transition in MoTe 2 Driven by Focused Ion Beam Irradiations. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38839057 DOI: 10.1021/acsami.4c03546] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2024]
Abstract
Phase transitions play an important role in tuning the physical properties of two-dimensional (2D) materials as well as developing their high-performance device applications. Here, we reported the observation of a phase transition in few-layered MoTe2 flakes by the irradiation of gallium (Ga+) ions using a focused ion beam (FIB) system. The semiconducting 2H phase of MoTe2 can be controllably converted to the metallic 1T'-like phase via Te defect engineering during irradiations. By taking advantage of the nanometer-sized Ga+ ion probe proved by FIB, in-plane 1T'-2H homojunctions of MoTe2 at submicrometer scale can be fabricated. Furthermore, we demonstrate the improvement of device performance (on-state current over 2 orders of magnitude higher) in MoTe2 transistors using the patterned 1T'-like phase regions as contact electrodes. Our study provides a new strategy to drive the phase transitions in MoTe2, tune their properties, and develop high-performance devices, which also extends the applications of FIB technology in 2D materials and their devices.
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Affiliation(s)
- Meiling Xiao
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
| | - Ziyu Wu
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
| | - Guangjian Liu
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
| | - Xiaxia Liao
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
| | - Jiaren Yuan
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
| | - Yangbo Zhou
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi 330031, People's Republic of China
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2
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Zhai W, Li Z, Wang Y, Zhai L, Yao Y, Li S, Wang L, Yang H, Chi B, Liang J, Shi Z, Ge Y, Lai Z, Yun Q, Zhang A, Wu Z, He Q, Chen B, Huang Z, Zhang H. Phase Engineering of Nanomaterials: Transition Metal Dichalcogenides. Chem Rev 2024; 124:4479-4539. [PMID: 38552165 DOI: 10.1021/acs.chemrev.3c00931] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Crystal phase, a critical structural characteristic beyond the morphology, size, dimension, facet, etc., determines the physicochemical properties of nanomaterials. As a group of layered nanomaterials with polymorphs, transition metal dichalcogenides (TMDs) have attracted intensive research attention due to their phase-dependent properties. Therefore, great efforts have been devoted to the phase engineering of TMDs to synthesize TMDs with controlled phases, especially unconventional/metastable phases, for various applications in electronics, optoelectronics, catalysis, biomedicine, energy storage and conversion, and ferroelectrics. Considering the significant progress in the synthesis and applications of TMDs, we believe that a comprehensive review on the phase engineering of TMDs is critical to promote their fundamental studies and practical applications. This Review aims to provide a comprehensive introduction and discussion on the crystal structures, synthetic strategies, and phase-dependent properties and applications of TMDs. Finally, our perspectives on the challenges and opportunities in phase engineering of TMDs will also be discussed.
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Affiliation(s)
- Wei Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Zijian Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Yongji Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Li Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Lixin Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Hua Yang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Banlan Chi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Jinzhe Liang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Zhenyu Shi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Yiyao Ge
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China
| | - Zhuangchai Lai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China
| | - Qinbai Yun
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - An Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Zhiying Wu
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Bo Chen
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zhiqi Huang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China
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3
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Chen L, Chen L, Chen H, Jiang K, Zhu L, Shang L, Li Y, Gong S, Hu Z. Phase transition in WSe 2-xTe x monolayers driven by charge injection and pressure: a first-principles study. NANOSCALE 2024. [PMID: 38477210 DOI: 10.1039/d3nr06164g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/14/2024]
Abstract
Alloying strategies permit new probes for governing structural stability and semiconductor-semimetal phase transition of transition metal dichalcogenides (TMDs). However, the possible structure and phase transition mechanism of the alloy TMDs, and the effect of an external field, have been still unclear. Here, the enrichment of the Te content in WSe2-xTex monolayers allows for coherent structural transition from the H phase to the T' phase. The crystal orbital Hamiltonian population (COHP) uncovers that the bonding state of the H phase approaches the high-energy domain near the Fermi level as the Te concentration increases, posing a source of structural instability followed by a weakened energy barrier for the phase transition. In addition, the structural phase transition driven by charge injection opens up new possibilities for the development of phase-change devices based on atomic thin films. For WSe2-xTex monolayers with the H phase as the stable phase, the critical value of electron concentration triggering the phase transition decreases with an increase in the x value. Furthermore, the energy barrier from the H phase to the T' phase can be effectively reduced by applying tensile strain, which could favor the phase switching in electronic devices. This work provides a critical reference for controllable modulation of phase-sensitive devices from alloy materials with rich phase characteristics.
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Affiliation(s)
- Liyuan Chen
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Li Chen
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Hongli Chen
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Kai Jiang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Liangqing Zhu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Liyan Shang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Yawei Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Shijing Gong
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
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Wang J, Cheng F, Sun Y, Xu H, Cao L. Stacking engineering in layered homostructures: transitioning from 2D to 3D architectures. Phys Chem Chem Phys 2024; 26:7988-8012. [PMID: 38380525 DOI: 10.1039/d3cp04656g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
Artificial materials, characterized by their distinctive properties and customized functionalities, occupy a central role in a wide range of applications including electronics, spintronics, optoelectronics, catalysis, and energy storage. The emergence of atomically thin two-dimensional (2D) materials has driven the creation of artificial heterostructures, harnessing the potential of combining various 2D building blocks with complementary properties through the art of stacking engineering. The promising outcomes achieved for heterostructures have spurred an inquisitive exploration of homostructures, where identical 2D layers are precisely stacked. This perspective primarily focuses on the field of stacking engineering within layered homostructures, where precise control over translational or rotational degrees of freedom between vertically stacked planes or layers is paramount. In particular, we provide an overview of recent advancements in the stacking engineering applied to 2D homostructures. Additionally, we will shed light on research endeavors venturing into three-dimensional (3D) structures, which allow us to proactively address the limitations associated with artificial 2D homostructures. We anticipate that the breakthroughs in stacking engineering in 3D materials will provide valuable insights into the mechanisms governing stacking effects. Such advancements have the potential to unlock the full capability of artificial layered homostructures, propelling the future development of materials, physics, and device applications.
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Affiliation(s)
- Jiamin Wang
- Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, P. R. China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Fang Cheng
- State Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, P. R. China
| | - Yan Sun
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China.
| | - Hai Xu
- Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, P. R. China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Liang Cao
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, P. R. China.
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Khan AJ, Sajjad M, Khan S, Khan M, Mateen A, Shah SS, Arshid N, He L, Ma Z, Gao L, Zhao G. Telluride-Based Materials: A Promising Route for High Performance Supercapacitors. CHEM REC 2024; 24:e202300302. [PMID: 38010947 DOI: 10.1002/tcr.202300302] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 10/20/2023] [Indexed: 11/29/2023]
Abstract
As supercapacitor (SC) technology continues to evolve, there is a growing need for electrode materials with high energy/power densities and cycling stability. However, research and development of electrode materials with such characteristics is essential for commercialization the SC. To meet this demand, the development of superior electrode materials has become an increasingly critical step. The electrochemical performance of SCs is greatly influenced by various factors such as the reaction mechanism, crystal structure, and kinetics of electron/ion transfer in the electrodes, which have been challenging to address using previously investigated electrode materials like carbon and metal oxides/sulfides. Recently, tellurium and telluride-based materials have garnered increasing interest in energy storage technology owing to their high electronic conductivity, favorable crystal structure, and excellent volumetric capacity. This review provides a comprehensive understanding of the fundamental properties and energy storage performance of tellurium- and Te-based materials by introducing their physicochemical properties. First, we elaborate on the significance of tellurides. Next, the charge storage mechanism of functional telluride materials and important synthesis strategies are summarized. Then, research advancements in metal and carbon-based telluride materials, as well as the effectiveness of tellurides for SCs, were analyzed by emphasizing their essential properties and extensive advantages. Finally, the remaining challenges and prospects for improving the telluride-based supercapacitive performance are outlined.
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Affiliation(s)
- Abdul Jabbar Khan
- College of Chemistry and Chemical Engineering, Huanggang Normal University, Huanggang, 438000, China
| | - Muhammad Sajjad
- College of Chemistry and Materials Science, Zhejiang Normal University, Jinhua, 321004, China
| | - Shaukat Khan
- College of Engineering, Dhofar University, Salalah, 211, Sultanate of, Oman
| | - Muhammad Khan
- Department of Metallurgical and Materials Engineering, Middle East Technical University, Ankara, 06800, Turkey
| | - Abdul Mateen
- Department of Physics, Beijing Normal University, Beijing, 100084, P. R. China
| | - Syed Shaheen Shah
- Graduate School of Engineering, Kyoto University, Kyoto, 615-8520, Japan
| | - Numan Arshid
- School of Engineering and Technology, Sunway University, Bandar Sunway, 47500, Malaysia
| | - Liang He
- School of Mechanical Engineering, Sichuan University, Chengdu, 610065, China
| | - Zeyu Ma
- School of Mechanical Engineering, Sichuan University, Chengdu, 610065, China
| | - Ling Gao
- College of Chemistry and Chemical Engineering, Huanggang Normal University, Huanggang, 438000, China
| | - Guowei Zhao
- College of Chemistry and Chemical Engineering, Huanggang Normal University, Huanggang, 438000, China
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6
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Song S, Yoon A, Jang S, Lynch J, Yang J, Han J, Choe M, Jin YH, Chen CY, Cheon Y, Kwak J, Jeong C, Cheong H, Jariwala D, Lee Z, Kwon SY. Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes. Nat Commun 2023; 14:4747. [PMID: 37550303 PMCID: PMC10406929 DOI: 10.1038/s41467-023-40448-x] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/18/2022] [Accepted: 07/26/2023] [Indexed: 08/09/2023] Open
Abstract
High-performance p-type two-dimensional (2D) transistors are fundamental for 2D nanoelectronics. However, the lack of a reliable method for creating high-quality, large-scale p-type 2D semiconductors and a suitable metallization process represents important challenges that need to be addressed for future developments of the field. Here, we report the fabrication of scalable p-type 2D single-crystalline 2H-MoTe2 transistor arrays with Fermi-level-tuned 1T'-phase semimetal contact electrodes. By transforming polycrystalline 1T'-MoTe2 to 2H polymorph via abnormal grain growth, we fabricated 4-inch 2H-MoTe2 wafers with ultra-large single-crystalline domains and spatially-controlled single-crystalline arrays at a low temperature (~500 °C). Furthermore, we demonstrate on-chip transistors by lithographic patterning and layer-by-layer integration of 1T' semimetals and 2H semiconductors. Work function modulation of 1T'-MoTe2 electrodes was achieved by depositing 3D metal (Au) pads, resulting in minimal contact resistance (~0.7 kΩ·μm) and near-zero Schottky barrier height (~14 meV) of the junction interface, and leading to high on-state current (~7.8 μA/μm) and on/off current ratio (~105) in the 2H-MoTe2 transistors.
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Affiliation(s)
- Seunguk Song
- Department of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, US
| | - Aram Yoon
- Department of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Sora Jang
- Department of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Jason Lynch
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, US
| | - Jihoon Yang
- Department of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Juwon Han
- Department of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Myeonggi Choe
- Department of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Young Ho Jin
- Department of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Cindy Yueli Chen
- Department of Chemistry, University of Pennsylvania, Philadelphia, PA, 19104, US
| | - Yeryun Cheon
- Department of Physics, Sogang University, Seoul, 04107, Republic of Korea
| | - Jinsung Kwak
- Department of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- Department of Physics, Changwon National University, Changwon, 51140, Republic of Korea
| | - Changwook Jeong
- Department of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Hyeonsik Cheong
- Department of Physics, Sogang University, Seoul, 04107, Republic of Korea
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, US
| | - Zonghoon Lee
- Department of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea.
| | - Soon-Yong Kwon
- Department of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
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Vikraman D, Hussain S, Abbas Z, Karuppasamy K, Santhoshkumar P, Jung J, Kim HS. Density Functional Theory Approximations and Experimental Investigations on Co 1-xMo xTe 2 Alloy Electrocatalysts Tuning the Overall Water Splitting Reactions. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37229631 DOI: 10.1021/acsami.3c05055] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Understanding the relationship between electronic structure, surface characteristic, and reaction process of a catalyst helps to architect proficient electrodes for sustainable energy development. The highly active and stable catalysts made of earth-abundant materials provide a great endeavor toward green hydrogen production. Herein, we assembled the Co1-xMoxTe (x = 0-1) nanoarray structures into a bifunctional electrocatalyst to achieve high-performance hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) kinetics under alkaline conditions. The designed Co0.75Mo0.25Te and Co0.50Mo0.50 electrocatalysts require minimum overpotential and Tafel slope for high-efficacy HER and OER, respectively. Furthermore, we constructed a Co0.50Mo0.50Te2∥Co0.50Mo0.50Te2 device for overall water splitting with an overpotential of 1.39 V to achieve a current density of 10 mA cm-2, which is superior to noble electrocatalyst performance, with stable reaction throughout the 50 h continuous process. Density functional theory approximations and Gibbs free energy calculations validate the enhanced water splitting reaction catalyzed by the Co0.50Mo0.50Te2 nanoarrays. The partial replacement of Co atoms with Mo atoms in the Co0.50Mo0.50Te2 structure substantially enhances the water electrolysis kinetics through the synergistic effects between the combined metal atoms and the bonded chalcogen.
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Affiliation(s)
- Dhanasekaran Vikraman
- Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, Republic of Korea
| | - Sajjad Hussain
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
- Hybrid Materials Center (HMC), Sejong University, Seoul 05006, Republic of Korea
| | - Zeesham Abbas
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - K Karuppasamy
- Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, Republic of Korea
| | - P Santhoshkumar
- Millimeter-Wave Innovation Technology (MINT) Research Centre, Dongguk University-Seoul, Seoul 04620, Republic of Korea
| | - Jongwan Jung
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
- Hybrid Materials Center (HMC), Sejong University, Seoul 05006, Republic of Korea
| | - Hyun-Seok Kim
- Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, Republic of Korea
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8
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Hu Z, Zhang L, Chakraborty A, D'Olimpio G, Fujii J, Ge A, Zhou Y, Liu C, Agarwal A, Vobornik I, Farias D, Kuo CN, Lue CS, Politano A, Wang SW, Hu W, Chen X, Lu W, Wang L. Terahertz Nonlinear Hall Rectifiers Based on Spin-Polarized Topological Electronic States in 1T-CoTe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209557. [PMID: 36633006 DOI: 10.1002/adma.202209557] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2022] [Revised: 01/04/2023] [Indexed: 06/17/2023]
Abstract
The zero-magnetic-field nonlinear Hall effect (NLHE) refers to the second-order transverse current induced by an applied alternating electric field; it indicates the topological properties of inversion-symmetry-breaking crystals. Despite several studies on the NLHE induced by the Berry-curvature dipole in Weyl semimetals, the direct current conversion by rectification is limited to very low driving frequencies and cryogenic temperatures. The nonlinear photoresponse generated by the NLHE at room temperature can be useful for numerous applications in communication, sensing, and photodetection across a high bandwidth. In this study, observations of the second-order NLHE in type-II Dirac semimetal CoTe2 under time-reversal symmetry are reported. This is determined by the disorder-induced extrinsic contribution on the broken-inversion-symmetry surface and room-temperature terahertz rectification without the need for semiconductor junctions or bias voltage. It is shown that remarkable photoresponsivity over 0.1 A W-1 , a response time of approximately 710 ns, and a mean noise equivalent power of 1 pW Hz-1/2 can be achieved at room temperature. The results open a new pathway for low-energy photon harvesting via nonlinear rectification induced by the NLHE in strongly spin-orbit-coupled and inversion-symmetry-breaking systems, promising a considerable impact in the field of infrared/terahertz photonics.
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Affiliation(s)
- Zhen Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
| | - Libo Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Atasi Chakraborty
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur, 208016, India
| | - Gianluca D'Olimpio
- Department of Physical and Chemical Sciences, University of L'Aquila, via Vetoio, (AQ), 67100, L'Aquila, Italy
| | - Jun Fujii
- Consiglio Nazionale delle Ricerche (CNR)- Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science, Park S.S. 14 km 163.5, 34149, Trieste, Italy
| | - Anping Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
| | - Yuanchen Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
| | - Changlong Liu
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Amit Agarwal
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur, 208016, India
| | - Ivana Vobornik
- Consiglio Nazionale delle Ricerche (CNR)- Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science, Park S.S. 14 km 163.5, 34149, Trieste, Italy
| | - Daniel Farias
- Departamento de Física de la Materia Condensada and Instituto "Nicolás Cabrera", Universidad Autónoma de Madrid, 28049, Madrid, Spain
- Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, 28049, Madrid, Spain
| | - Chia-Nung Kuo
- Department of Physics, Cheng Kung University, 1 Ta-Hsueh Road, 70101, Tainan, Taiwan, China
| | - Chin Shan Lue
- Department of Physics, Cheng Kung University, 1 Ta-Hsueh Road, 70101, Tainan, Taiwan, China
| | - Antonio Politano
- Department of Physical and Chemical Sciences, University of L'Aquila, via Vetoio, (AQ), 67100, L'Aquila, Italy
| | - Shao-Wei Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Wei Lu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Lin Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
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9
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Ye F, Islam A, Wang Y, Guo J, Feng PXL. Phase Transition of MoTe 2 Controlled in van der Waals Heterostructure Nanoelectromechanical Systems. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205327. [PMID: 36461691 DOI: 10.1002/smll.202205327] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2022] [Indexed: 06/17/2023]
Abstract
This work reports experimental demonstrations of reversible crystalline phase transition in ultrathin molybdenum ditelluride (MoTe2 ) controlled by thermal and mechanical mechanisms on the van der Waals (vdW) nanoelectromechanical systems (NEMS) platform, with hexagonal boron nitride encapsulated MoTe2 structure residing on top of graphene layer. Benefiting from very efficient electrothermal heating and straining effects in the suspended vdW heterostructures, MoTe2 phase transition is triggered by rising temperature and strain level. Raman spectroscopy monitors the MoTe2 crystalline phase signatures in situ and clearly records reversible phase transitions between hexagonal 2H (semiconducting) and monoclinic 1T' (metallic) phases. Combined with Raman thermometry, precisely measured nanomechanical resonances of the vdW devices enable the determination and monitoring of the strain variations as temperature is being regulated by electrothermal control. These results not only deepen the understanding of MoTe2 phase transition, but also demonstrate a novel platform for engineering MoTe2 phase transition and multiphysical devices.
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Affiliation(s)
- Fan Ye
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, OH 44106, USA
| | - Arnob Islam
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, OH 44106, USA
| | - Yanan Wang
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, OH 44106, USA
- Department of Electrical & Computer Engineering, Herbert Wertheim College of Engineering, University of Florida, Gainesville, FL 32611, USA
| | - Jing Guo
- Department of Electrical & Computer Engineering, Herbert Wertheim College of Engineering, University of Florida, Gainesville, FL 32611, USA
| | - Philip X-L Feng
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, OH 44106, USA
- Department of Electrical & Computer Engineering, Herbert Wertheim College of Engineering, University of Florida, Gainesville, FL 32611, USA
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10
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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11
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Wu D, Guo C, Zeng L, Ren X, Shi Z, Wen L, Chen Q, Zhang M, Li XJ, Shan CX, Jie J. Phase-controlled van der Waals growth of wafer-scale 2D MoTe 2 layers for integrated high-sensitivity broadband infrared photodetection. LIGHT, SCIENCE & APPLICATIONS 2023; 12:5. [PMID: 36588125 PMCID: PMC9806107 DOI: 10.1038/s41377-022-01047-5] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2022] [Revised: 11/21/2022] [Accepted: 11/25/2022] [Indexed: 05/29/2023]
Abstract
Being capable of sensing broadband infrared (IR) light is vitally important for wide-ranging applications from fundamental science to industrial purposes. Two-dimensional (2D) topological semimetals are being extensively explored for broadband IR detection due to their gapless electronic structure and the linear energy dispersion relation. However, the low charge separation efficiency, high noise level, and on-chip integration difficulty of these semimetals significantly hinder their further technological applications. Here, we demonstrate a facile thermal-assisted tellurization route for the van der Waals (vdW) growth of wafer-scale phase-controlled 2D MoTe2 layers. Importantly, the type-II Weyl semimetal 1T'-MoTe2 features a unique orthorhombic lattice structure with a broken inversion symmetry, which ensures efficient carrier transportation and thus reduces the carrier recombination. This characteristic is a key merit for the well-designed 1T'-MoTe2/Si vertical Schottky junction photodetector to achieve excellent performance with an ultrabroadband detection range of up to 10.6 µm and a large room temperature specific detectivity of over 108 Jones in the mid-infrared (MIR) range. Moreover, the large-area synthesis of 2D MoTe2 layers enables the demonstration of high-resolution uncooled MIR imaging capability by using an integrated device array. This work provides a new approach to assembling uncooled IR photodetectors based on 2D materials.
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Affiliation(s)
- Di Wu
- School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education, Zhengzhou University, Zhengzhou, Henan, 450052, China
| | - Chenguang Guo
- School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education, Zhengzhou University, Zhengzhou, Henan, 450052, China
| | - Longhui Zeng
- Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA, 92093, USA.
| | - Xiaoyan Ren
- School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education, Zhengzhou University, Zhengzhou, Henan, 450052, China
| | - Zhifeng Shi
- School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education, Zhengzhou University, Zhengzhou, Henan, 450052, China
| | - Long Wen
- Institute of Nanophotonics, Jinan University, Guangzhou, Guangdong, 511443, China
| | - Qin Chen
- Institute of Nanophotonics, Jinan University, Guangzhou, Guangdong, 511443, China
| | - Meng Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Xin Jian Li
- School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education, Zhengzhou University, Zhengzhou, Henan, 450052, China.
| | - Chong-Xin Shan
- School of Physics and Microelectronics, Key Laboratory of Material Physics Ministry of Education, Zhengzhou University, Zhengzhou, Henan, 450052, China
| | - Jiansheng Jie
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, China.
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12
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Xu T, Li A, Wang S, Tan Y, Cheng X. Phase-Controllable Chemical Vapor Deposition Synthesis of Atomically Thin MoTe 2. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4133. [PMID: 36500756 PMCID: PMC9737202 DOI: 10.3390/nano12234133] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/01/2022] [Revised: 11/21/2022] [Accepted: 11/21/2022] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) molybdenum telluride (MoTe2) is attracting increasing attention for its potential applications in electronic, optoelectronic, photonic and catalytic fields, owing to the unique band structures of both stable 2H phase and 1T′ phase. However, the direct growth of high-quality atomically thin MoTe2 with the controllable proportion of 2H and 1T′ phase seems hard due to easy phase transformation since the potential barrier between the two phases is extremely small. Herein, we report a strategy of the phase-controllable chemical vapor deposition (CVD) synthesis for few-layer (<3 layer) MoTe2. Besides, a new understanding of the phase-controllable growth mechanism is presented based on a combination of experimental results and DFT calculations. The lattice distortion caused by Te vacancies or structural strain might make 1T′-MoTe2 more stable. The conditions for 2H to 1T′ phase conversion are determined to be the following: Te monovacancies exceeding 4% or Te divacancies exceeding 8%, or lattice strain beyond 6%. In contrast, sufficient Te supply and appropriate tellurization velocity are essential to obtaining the prevailing 2H-MoTe2. Our work provides a novel perspective on the preparation of 2D transition metal chalcogenides (TMDs) with the controllable proportion of 2H and 1T′ phase and paves the way to their subsequent potential application of these hybrid phases.
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Affiliation(s)
- Tao Xu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Aolin Li
- Powder Metallurgy Research Institute, Central South University, Changsha 410073, China
| | - Shanshan Wang
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073, China
| | - Yinlong Tan
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Xiang’ai Cheng
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
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13
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Gu Y, Zhang L, Cai H, Liang L, Liu C, Hoffman A, Yu Y, Houston A, Puretzky AA, Duscher G, Rack PD, Rouleau CM, Meng X, Yoon M, Geohegan DB, Xiao K. Stabilized Synthesis of 2D Verbeekite: Monoclinic PdSe 2 Crystals with High Mobility and In-Plane Optical and Electrical Anisotropy. ACS NANO 2022; 16:13900-13910. [PMID: 35775975 DOI: 10.1021/acsnano.2c02711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
PdSe2 has a layered structure with an unusual, puckered Cairo pentagonal tiling. Its atomic bond configuration features planar 4-fold-coordinated Pd atoms and intralayer Se-Se bonds that enable polymorphic phases with distinct electronic and quantum properties, especially when atomically thin. PdSe2 is conventionally orthorhombic, and direct synthesis of its metastable polymorphic phases is still a challenge. Here, we report an ambient-pressure chemical vapor deposition approach to synthesize metastable monoclinic PdSe2. Monoclinic PdSe2 is shown to be synthesized selectively under Se-deficient conditions that induce Se vacancies. These defects are shown by first-principles density functional theory calculations to reduce the free energy of the metastable monoclinic phase, thereby stabilizing it during synthesis. The structure and composition of the monoclinic PdSe2 crystals are identified and characterized by scanning transmission electron microscopy imaging, convergent beam electron diffraction, and electron energy loss spectroscopy. Polarized Raman spectroscopy of the monoclinic PdSe2 flakes reveals their strong in-plane optical anisotropy. Electrical transport measurements show that the monoclinic PdSe2 exhibits n-type charge carrier conduction with electron mobilities up to ∼298 cm2 V-1 s-1 and a strong in-plane electron mobility anisotropy of ∼1.9. The defect-mediated growth pathway identified in this work is promising for phase-selective direct synthesis of other 2D transition metal dichalcogenides.
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Affiliation(s)
- Yiyi Gu
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lizhi Zhang
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
- Laboratory of Theoretical and Computational Nanoscience, National Center for Nanoscience and Technology of China, Beijing 100190, China
| | - Hui Cai
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Chenze Liu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Anna Hoffman
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Yiling Yu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Austin Houston
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Gerd Duscher
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Philip D Rack
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Christopher M Rouleau
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Xiangmin Meng
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mina Yoon
- Materials Sciences and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - David B Geohegan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
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14
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Guo M, Gu S, Xu S, Lu J, Wang Y, Zhou G. Design, synthesis and application of two-dimensional metal tellurides as high-performance electrode materials. Front Chem 2022; 10:1023003. [PMID: 36226125 PMCID: PMC9548651 DOI: 10.3389/fchem.2022.1023003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 08/31/2022] [Indexed: 11/22/2022] Open
Abstract
Multifunctional electrode materials with inherent conductivity have attracted extensive attention in recent years. Two-dimensional (2D) metal telluride nanomaterials are more promising owing to their strong metallic properties and unique physical/chemical merits. In this review, recent advancements in the preparation of 2D metal tellurides and their application in electrode materials are presented. First, the most available preparation methods, such as hydro/solvent thermal, chemical vapor deposition, and electrodeposition, are summarized. Then, the unique performance of metal telluride electrodes in capacitors, anode materials of Li/Na ion batteries, electrocatalysis, and lithium-sulfur batteries are discussed. Finally, significant challenges and opportunities in the preparation and application of 2D metal tellurides are proposed.
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Affiliation(s)
| | - Shaonan Gu
- *Correspondence: Shaonan Gu, ; Guowei Zhou,
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15
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Song Z, Liu T, Lai H, Meng X, Yang L, Su J, Chen T. A Universally EDTA-Assisted Synthesis of Polytypic Bismuth Telluride Nanoplates with a Size-Dependent Enhancement of Tumor Radiosensitivity and Metabolism In Vivo. ACS NANO 2022; 16:4379-4396. [PMID: 35175721 DOI: 10.1021/acsnano.1c10663] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Bismuth telluride (Bi2Te3) is an available thermoelectric material with the lowest band gap among bismuth chalcogenides, revealing a broad application in photocatalysis. Unfortunately, its size and morphology related to a radio-catalysis property have rarely been explored. Herein, an ethylenediaminetetraacetic acid (EDTA)-assisted hydrothermal strategy was introduced to synthesize polytypic Bi2Te3 nanoplates (BT NPs) that exhibit size-dependent radio-sensitization and metabolism characteristics in vivo. By simply varying the molar ratio of EDTA/Bi3+ during the reaction, BT NPs with different sizes and morphologies were obtained. EDTA acting as chelating agent and "capping" agent contributed to the homogeneous growth of BT NPs by eliminating dangling bonds and reducing the surface energy of different facets. Further analyzing the size-dependent radio-sensitization mechanism, larger-sized BT NPs generated holes that preferentially catalyzed the conversion of OH- to ·OH when irradiated with X-rays, while the smaller-sized BT NPs exhibited faster decay kinetics producing higher 1O2 levels to enhance radiotherapy effects. A metabolomic analysis revealed that larger-sized BT NPs were oxidized into Bi(Ox) in the liver via a citrate cycle pathway, whereas smaller-sized BT NPs accumulated in the kidney and were excreted in urine in the form of ions by regulating the metabolism of glutamate. In a cervical cancer model, BT NPs combined with X-ray irradiation significantly antagonized tumor suppression through the promotion of apoptosis in tumor cells. Consequently, in addition to providing a prospect of BT NPs as an efficient radio-sensitizer to boost the tumor radiosensitivity, we put forth a strategy that can be universally applied in synthesizing metal chalcogenides for catalysis-promoted radiotherapy.
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Affiliation(s)
- Zhenhuan Song
- School of Food Science and Engineering, Guangdong Province Key Laboratory for Green Processing of Natural Products and Product Safety, South China University of Technology, Guangzhou 510640, P. R. China
- China-Singapore International Joint Research Institute, Guangzhou 510700, P. R. China
| | - Ting Liu
- Zhuhai Precision Medical Center, Guangdong Provincial Key Laboratory of Tumor Interventional Diagnosis and Treatment, Zhuhai People's Hospital, Zhuhai Hospital Affiliated with Jinan University, Jinan University, Zhuhai 519000, Guangdong, P. R. China
- College of Chemistry and Materials Science, Guangdong Provincial Key Laboratory of Functional Supramolecular Coordination Materials and Applications, Jinan University, Guangzhou 510632, P. R. China
| | - Haoqiang Lai
- Zhuhai Precision Medical Center, Guangdong Provincial Key Laboratory of Tumor Interventional Diagnosis and Treatment, Zhuhai People's Hospital, Zhuhai Hospital Affiliated with Jinan University, Jinan University, Zhuhai 519000, Guangdong, P. R. China
- College of Chemistry and Materials Science, Guangdong Provincial Key Laboratory of Functional Supramolecular Coordination Materials and Applications, Jinan University, Guangzhou 510632, P. R. China
| | - Xiaofeng Meng
- School of Food Science and Engineering, Guangdong Province Key Laboratory for Green Processing of Natural Products and Product Safety, South China University of Technology, Guangzhou 510640, P. R. China
- China-Singapore International Joint Research Institute, Guangzhou 510700, P. R. China
| | - Liu Yang
- School of Food Science and Engineering, Guangdong Province Key Laboratory for Green Processing of Natural Products and Product Safety, South China University of Technology, Guangzhou 510640, P. R. China
- China-Singapore International Joint Research Institute, Guangzhou 510700, P. R. China
| | - Jianyu Su
- School of Food Science and Engineering, Guangdong Province Key Laboratory for Green Processing of Natural Products and Product Safety, South China University of Technology, Guangzhou 510640, P. R. China
- China-Singapore International Joint Research Institute, Guangzhou 510700, P. R. China
| | - Tianfeng Chen
- Zhuhai Precision Medical Center, Guangdong Provincial Key Laboratory of Tumor Interventional Diagnosis and Treatment, Zhuhai People's Hospital, Zhuhai Hospital Affiliated with Jinan University, Jinan University, Zhuhai 519000, Guangdong, P. R. China
- College of Chemistry and Materials Science, Guangdong Provincial Key Laboratory of Functional Supramolecular Coordination Materials and Applications, Jinan University, Guangzhou 510632, P. R. China
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16
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Li JW, Ke SS, Deng HX, Sun X, Guo Y, Lü HF. Defect modulated electronic structure and magnetism in the 1T′ phase of Janus MoSSe. Chem Phys 2022. [DOI: 10.1016/j.chemphys.2021.111440] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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17
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Lu J, Deng Z, Ye Q, Zheng Z, Yao J, Yang G. Promoting the Performance of 2D Material Photodetectors by Dielectric Engineering. SMALL METHODS 2022; 6:e2101046. [PMID: 34935297 DOI: 10.1002/smtd.202101046] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2021] [Revised: 11/24/2021] [Indexed: 06/14/2023]
Abstract
Low light absorption and limited carrier lifetime are two limiting factors hampering the further breakthrough of the performance of 2D materials (2DMs)-based photodetectors. This study proposes an ingenious dielectric engineering strategy toward boosting the photosensitivity. Periodic dielectric structures (PDSs), including SiO2 /h-BN, SiO2 /Al2 O3 , and SiO2 /SrTiO3 (STO), are exploited to couple with 2D photosensitive channels (denoted as PDS-2DMs). The responsivity, external quantum efficiency, and detectivity of an optimized SiO2 /STO(300 nm) -WSe2 photodetector reach 89081 A W-1 , 2.7 × 107 %, and 1.8 × 1013 Jones, respectively. These performance metrics are orders of magnitude higher than a pristine WSe2 photodetector, enabling reliable sub-1 pW weak light detection. Based on systematic characterizations and first-principle calculations, such dramatic performance improvement is associated with the promoted direct bandgap transition, reduced exciton binding energy, and PDS-induced periodic intramolecular built-in electric field across the atomically thin channels, which efficiently separates the photoexcited electron-hole pairs. More inspiringly, this strategy is also successfully exploited to 2D WS2 photodetectors, demonstrating broad applicability. As a whole, this work promises an exceptional avenue to ameliorate 2DM photodetectors and opens up a new horizon "dielectric optoelectronics," simultaneously highlighting the role of dielectric environment during analyzing the fundamentals of 2DM devices.
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Affiliation(s)
- Jianting Lu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Zexiang Deng
- School of Physics, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Qiaojue Ye
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
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18
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Su B, Huang Y, Hou YH, Li J, Yang R, Ma Y, Yang Y, Zhang G, Zhou X, Luo J, Chen Z. Persistence of Monoclinic Crystal Structure in 3D Second-Order Topological Insulator Candidate 1T'-MoTe 2 Thin Flake Without Structural Phase Transition. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2101532. [PMID: 34923770 PMCID: PMC8844473 DOI: 10.1002/advs.202101532] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2021] [Revised: 10/29/2021] [Indexed: 05/29/2023]
Abstract
A van der Waals material, MoTe2 with a monoclinic 1T' crystal structure is a candidate for 3D second-order topological insulators (SOTIs) hosting gapless hinge states and insulating surface states. However, due to the temperature-induced structural phase transition, the monoclinic 1T' structure of MoTe2 is transformed into the orthorhombic Td structure as the temperature is lowered, which hinders the experimental verification and electronic applications of the predicted SOTI state at low temperatures. Here, systematic Raman spectroscopy studies of the exfoliated MoTe2 thin flakes with variable thicknesses at different temperatures, are presented. As a spectroscopic signature of the orthorhombic Td structure of MoTe2 , the out-of-plane vibration mode D at ≈ 125 cm-1 is always visible below a certain temperature in the multilayer flakes thicker than ≈ 27.7 nm, but vanishes in the temperature range from 80 to 320 K when the flake thickness becomes lower than ≈ 19.5 nm. The absence of the out-of-plane vibration mode D in the Raman spectra here demonstrates not only the disappearance of the monoclinic-to-orthorhombic phase transition but also the persistence of the monoclinic 1T' structure in the MoTe2 thin flakes thinner than ≈ 19.5 nm at low temperatures down to 80 K, which may be caused by the high enough density of the holes introduced during the gold-enhanced exfoliation process and exposure to air. The MoTe2 thin flakes with the low-temperature monoclinic 1T' structure provide a material platform for realizing SOTI states in van der Waals materials at low temperatures, which paves the way for developing a new generation of electronic devices based on SOTIs.
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Affiliation(s)
- Bo Su
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100190China
| | - Yuan Huang
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Songshan Lake Materials LaboratoryDongguan523808China
| | - Yan Hui Hou
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Materials Science and EngineeringTianjin University of TechnologyTianjin300384China
| | - Jiawei Li
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100190China
| | - Rong Yang
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Songshan Lake Materials LaboratoryDongguan523808China
| | - Yongchang Ma
- School of Materials Science and EngineeringTianjin University of TechnologyTianjin300384China
| | - Yang Yang
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Songshan Lake Materials LaboratoryDongguan523808China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100190China
- Songshan Lake Materials LaboratoryDongguan523808China
- Collaborative Innovation Center of Quantum MatterBeijingChina
| | - Xingjiang Zhou
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100190China
- Songshan Lake Materials LaboratoryDongguan523808China
- Collaborative Innovation Center of Quantum MatterBeijingChina
| | - Jianlin Luo
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100190China
- Songshan Lake Materials LaboratoryDongguan523808China
- Collaborative Innovation Center of Quantum MatterBeijingChina
| | - Zhi‐Guo Chen
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100190China
- Songshan Lake Materials LaboratoryDongguan523808China
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19
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Wu X, Xiao S, Long Y, Ma T, Shao W, Cao S, Xiang X, Ma L, Qiu L, Cheng C, Zhao C. Emerging 2D Materials for Electrocatalytic Applications: Synthesis, Multifaceted Nanostructures, and Catalytic Center Design. SMALL 2022; 18:e2105831. [PMID: 35102688 DOI: 10.1002/smll.202105831] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/24/2021] [Revised: 12/23/2021] [Indexed: 02/05/2023]
Abstract
Currently, the development of advanced 2D nanomaterials has become an interdisciplinary subject with extensive studies due to their extraordinary physicochemical performances. Beyond graphene, the emerging 2D-material-derived electrocatalysts (2D-ECs) have aroused great attention as one of the best candidates for heterogeneous electrocatalysis. The tunable physicochemical compositions and characteristics of 2D-ECs enable rational structural engineering at the molecular/atomic levels to meet the requirements of different catalytic applications. Due to the lack of instructive and comprehensive reviews, here, the most recent advances in the nanostructure and catalytic center design and the corresponding structure-function relationships of emerging 2D-ECs are systematically summarized. First, the synthetic pathways and state-of-the-art strategies in the multifaceted structural engineering and catalytic center design of 2D-ECs to promote their electrocatalytic activities, such as size and thickness, phase and strain engineering, heterojunctions, heteroatom doping, and defect engineering, are emphasized. Then, the representative applications of 2D-ECs in electrocatalytic fields are depicted and summarized in detail. Finally, the current breakthroughs and primary challenges are highlighted and future directions to guide the perspectives for developing 2D-ECs as highly efficient electrocatalytic nanoplatforms are clarified. This review provides a comprehensive understanding to engineer 2D-ECs and may inspire many novel attempts and new catalytic applications across broad fields.
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Affiliation(s)
- Xizheng Wu
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Department of Ultrasound, West China Hospital, Sichuan University, Chengdu, 610065, China
| | - Sutong Xiao
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Department of Ultrasound, West China Hospital, Sichuan University, Chengdu, 610065, China
| | - Yanping Long
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Department of Ultrasound, West China Hospital, Sichuan University, Chengdu, 610065, China
| | - Tian Ma
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Department of Ultrasound, West China Hospital, Sichuan University, Chengdu, 610065, China
| | - Wenjie Shao
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Department of Ultrasound, West China Hospital, Sichuan University, Chengdu, 610065, China
| | - Sujiao Cao
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Department of Ultrasound, West China Hospital, Sichuan University, Chengdu, 610065, China
| | - Xi Xiang
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Department of Ultrasound, West China Hospital, Sichuan University, Chengdu, 610065, China
| | - Lang Ma
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Department of Ultrasound, West China Hospital, Sichuan University, Chengdu, 610065, China.,Department of Chemistry and Biochemistry, Freie Universität Berlin, Takustrasse 3, 14195, Berlin, Germany
| | - Li Qiu
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Department of Ultrasound, West China Hospital, Sichuan University, Chengdu, 610065, China
| | - Chong Cheng
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Department of Ultrasound, West China Hospital, Sichuan University, Chengdu, 610065, China
| | - Changsheng Zhao
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Department of Ultrasound, West China Hospital, Sichuan University, Chengdu, 610065, China.,College of Biomedical Engineering, National Engineering Research Center for Biomaterials, Sichuan University, Chengdu, 610064, China.,College of Chemical Engineering, Sichuan University, Chengdu, 610065, China
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20
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Zhou R, Wu J, Chen Y, Xie L. Polymorph Structures, Rich Physical Properties and Potential Applications of
Two‐Dimensional MoTe
2
,
WTe
2
and Its Alloys. CHINESE J CHEM 2022. [DOI: 10.1002/cjoc.202100777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Rui Zhou
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Juanxia Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Yuansha Chen
- Beijing National Laboratory for Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences Beijing 100190 China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
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21
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Du Y, Dai L, Yang F, Zhang Y, An C. In situ polymerization confinement synthesis of ultrasmall MoTe 2 nanoparticles for the electrochemical detection of dopamine. Inorg Chem Front 2022. [DOI: 10.1039/d2qi00930g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Ultrasmall MoTe2 nanoparticles has been synthesized using an in situ polymerization confinement method, which exhibits a low limit of detection and excellent selectivity for electrochemical dopamine sensors.
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Affiliation(s)
- Yuting Du
- Tianjin Key Laboratory of Organic Solar Cell and Photochemical Conversion, School of Chemistry and Chemical Engineering, Life and Health Intelligent Research Institute, Tianjin University of Technology, Tianjin 300384, China
| | - Linxiu Dai
- Tianjin Key Laboratory of Organic Solar Cell and Photochemical Conversion, School of Chemistry and Chemical Engineering, Life and Health Intelligent Research Institute, Tianjin University of Technology, Tianjin 300384, China
| | - Fan Yang
- Tianjin Key Laboratory of Organic Solar Cell and Photochemical Conversion, School of Chemistry and Chemical Engineering, Life and Health Intelligent Research Institute, Tianjin University of Technology, Tianjin 300384, China
| | - Yue Zhang
- Tianjin Key Laboratory of Organic Solar Cell and Photochemical Conversion, School of Chemistry and Chemical Engineering, Life and Health Intelligent Research Institute, Tianjin University of Technology, Tianjin 300384, China
| | - Changhua An
- Tianjin Key Laboratory of Organic Solar Cell and Photochemical Conversion, School of Chemistry and Chemical Engineering, Life and Health Intelligent Research Institute, Tianjin University of Technology, Tianjin 300384, China
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22
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Recent Progress in Two-Dimensional MoTe 2 Hetero-Phase Homojunctions. NANOMATERIALS 2021; 12:nano12010110. [PMID: 35010060 PMCID: PMC8746702 DOI: 10.3390/nano12010110] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/23/2021] [Revised: 12/21/2021] [Accepted: 12/27/2021] [Indexed: 11/17/2022]
Abstract
With the demand for low contact resistance and a clean interface in high-performance field-effect transistors, two-dimensional (2D) hetero-phase homojunctions, which comprise a semiconducting phase of a material as the channel and a metallic phase of the material as electrodes, have attracted growing attention in recent years. In particular, MoTe2 exhibits intriguing properties and its phase is easily altered from semiconducting 2H to metallic 1T' and vice versa, owing to the extremely small energy barrier between these two phases. MoTe2 thus finds potential applications in electronics as a representative 2D material with multiple phases. In this review, we briefly summarize recent progress in 2D MoTe2 hetero-phase homojunctions. We first introduce the properties of the diverse phases of MoTe2, demonstrate the approaches to the construction of 2D MoTe2 hetero-phase homojunctions, and then show the applications of the homojunctions. Lastly, we discuss the prospects and challenges in this research field.
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23
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Hernandez Ruiz K, Wang Z, Ciprian M, Zhu M, Tu R, Zhang L, Luo W, Fan Y, Jiang W. Chemical Vapor Deposition Mediated Phase Engineering for 2D Transition Metal Dichalcogenides: Strategies and Applications. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202100047] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022] Open
Affiliation(s)
- Karla Hernandez Ruiz
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Institute of Functional Materials College of Materials Science and Engineering, Donghua University Shanghai 201620 China
| | - Ziqian Wang
- Department of Materials Science and Engineering Johns Hopkins University Baltimore MD 21218 USA
| | - Matteo Ciprian
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Institute of Functional Materials College of Materials Science and Engineering, Donghua University Shanghai 201620 China
| | - Meifang Zhu
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Institute of Functional Materials College of Materials Science and Engineering, Donghua University Shanghai 201620 China
| | - Rong Tu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
| | - Lianmeng Zhang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
| | - Wei Luo
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Institute of Functional Materials College of Materials Science and Engineering, Donghua University Shanghai 201620 China
| | - Yuchi Fan
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Institute of Functional Materials College of Materials Science and Engineering, Donghua University Shanghai 201620 China
| | - Wan Jiang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Institute of Functional Materials College of Materials Science and Engineering, Donghua University Shanghai 201620 China
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24
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Li F, Chen M, Wang Y, Zhu X, Zhang X, Zou Z, Zhang D, Yi J, Li Z, Li D, Pan A. Strain-controlled synthesis of ultrathin hexagonal GaTe/MoS 2 heterostructure for sensitive photodetection. iScience 2021; 24:103031. [PMID: 34541467 PMCID: PMC8437799 DOI: 10.1016/j.isci.2021.103031] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2021] [Revised: 06/15/2021] [Accepted: 08/20/2021] [Indexed: 11/18/2022] Open
Abstract
Ultrathin hexagonal GaTe, with relatively high charge density, holds great potential in the field of optoelectronic devices. However, the thermodynamical stability limits it fabrications as well as applications. Here, by introducing two-dimensional MoS2 as the substrate, we successfully realized the phase-controlled synthesis of ultrathin h-GaTe, leading to high-quality h-GaTe/MoS2 heterostructures. Theoretical calculation studies reveal that GaTe with hexagonal phase is more thermodynamically stable on MoS2 templates, which can be attributed to the strain stretching and the formation energy reduction. Based on the achieved p-n heterostructures, optoelectronic devices are designed and probed, where remarkable photoresponsivity (32.5 A/W) and fast photoresponse speed (<50 μs) are obtained, indicating well-behaved photo-sensing behaviors. The study here could offer a good reference for the controlled growth of the relevant materials, and the achieved heterostructure will find promising applications in future integrated electronic and optoelectronic devices and systems.
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Affiliation(s)
- Fang Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
- Key Laboratory of Inferior Crude Oil Processing of Guangdong Provincial Higher Education Institutes, School of Chemical Engineering, Guangdong University of Petrochemical Technology, Maoming, Guangdong 525000, China
| | - Mingxing Chen
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China
| | - Yajuan Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Xiaoli Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Xuehong Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Zixing Zou
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Danliang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Jiali Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Ziwei Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
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25
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Yu B, Huang A, Srinivas K, Zhang X, Ma F, Wang X, Chen D, Wang B, Zhang W, Wang Z, He J, Chen Y. Outstanding Catalytic Effects of 1T'-MoTe 2 Quantum Dots@3D Graphene in Shuttle-Free Li-S Batteries. ACS NANO 2021; 15:13279-13288. [PMID: 34351124 DOI: 10.1021/acsnano.1c03011] [Citation(s) in RCA: 23] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
It is still challenging to develop sulfur electrodes for Li-S batteries with high electrical conductivity and fast kinetics, as well as efficient suppression of the shuttling effect of lithium polysulfides. To address such issues, herein, polar MoTe2 with different phases (2H, 1T, and 1T') were deeply investigated by density functional theory calculations, suggesting that the 1T'-MoTe2 displays concentrated density of states (DOS) near the Fermi level with high conductivity. By optimization of the synthesis, 1T'-MoTe2 quantum dots decorated three-dimensional graphene (MTQ@3DG) was prepared to overcome these issues, and it accomplished exceptional performance in Li-S batteries. Owing to the chemisorption and high catalytic effect of 1T'-MoTe2 quantum dots, MTQ@3DG/S exhibits highly reversible discharge capacity of 1310.1 mAh g-1 at 0.2 C with 0.026% capacity fade rate per cycle over 600 cycles. The adsorption calculation demonstrates that the conversion of Li2S2 to Li2S is the rate-limiting step where the Gibbs free energies are 1.07 eV for graphene and 0.97 eV for 1T'-MoTe2, revealing the importance of 1T'-MoTe2. Furthermore, in situ Raman spectroscopy investigation proved the suppression of the shuttle effect of LiPSs in MTQ@3DG/S cells during the cycle.
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Affiliation(s)
- Bo Yu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Aijian Huang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
- Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Katam Srinivas
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Xiaojuan Zhang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Fei Ma
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Xinqiang Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Dongjiang Chen
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Bin Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Wanli Zhang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Jiarui He
- Department of Mechanical Engineering and Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Yuanfu Chen
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
- School of Science, Tibet University, Lhasa 850000, China
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26
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Yin X, Tang CS, Zheng Y, Gao J, Wu J, Zhang H, Chhowalla M, Chen W, Wee ATS. Recent developments in 2D transition metal dichalcogenides: phase transition and applications of the (quasi-)metallic phases. Chem Soc Rev 2021; 50:10087-10115. [PMID: 34396377 DOI: 10.1039/d1cs00236h] [Citation(s) in RCA: 62] [Impact Index Per Article: 20.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/24/2023]
Abstract
The advent of two-dimensional transition metal dichalcogenides (2D-TMDs) has led to an extensive amount of interest amongst scientists and engineers alike and an intensive amount of research has brought about major breakthroughs in the electronic and optical properties of 2D materials. This in turn has generated considerable interest in novel device applications. With the polymorphic structural features of 2D-TMDs, this class of materials can exhibit both semiconducting and metallic (quasi-metallic) properties in their respective phases. This polymorphic property further increases the interest in 2D-TMDs both in fundamental research and for their potential utilization in novel high-performance device applications. In this review, we highlight the unique structural properties of few-layer and monolayer TMDs in the metallic 1T- and quasi-metallic 1T'-phases, and how these phases dictate their electronic and optical properties. An overview of the semiconducting-to-(quasi)-metallic phase transition of 2D-TMD systems will be covered along with a discussion on the phase transition mechanisms. The current development in the applications of (quasi)-metallic 2D-TMDs will be presented ranging from high-performance electronic and optoelectronic devices to energy storage, catalysis, piezoelectric and thermoelectric devices, and topological insulator and neuromorphic computing applications. We conclude our review by highlighting the challenges confronting the utilization of TMD-based systems and projecting the future developmental trends with an outlook of the progress needed to propel this exciting field forward.
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Affiliation(s)
- Xinmao Yin
- Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, Shanghai University, Shanghai 200444, China
| | - Chi Sin Tang
- Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, 138634, Singapore and Department of Physics, Faculty of Science, National University of Singapore, Singapore 117542, Singapore.
| | - Yue Zheng
- Department of Physics, Faculty of Science, National University of Singapore, Singapore 117542, Singapore.
| | - Jing Gao
- Department of Physics, Faculty of Science, National University of Singapore, Singapore 117542, Singapore.
| | - Jing Wu
- Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, 138634, Singapore
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China and Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China and Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, China
| | - Manish Chhowalla
- Department of Materials Science & Metallurgy, University of Cambridge, Cambridge, CB30FS, UK
| | - Wei Chen
- Department of Physics, Faculty of Science, National University of Singapore, Singapore 117542, Singapore. and Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Andrew T S Wee
- Department of Physics, Faculty of Science, National University of Singapore, Singapore 117542, Singapore.
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27
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Ma L, Zhu J, Li W, Huang R, Wang X, Guo J, Choi JH, Lou Y, Wang D, Zou G. Immobilized Precursor Particle Driven Growth of Centimeter-Sized MoTe 2 Monolayer. J Am Chem Soc 2021; 143:13314-13324. [PMID: 34375083 DOI: 10.1021/jacs.1c06250] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Abstract
Molybdenum ditelluride (MoTe2) has attracted ever-growing attention in recent years due to its novel characteristics in spintronics and phase-engineering, and an efficient and convenient method to achieve large-area high-quality film is an essential step toward electronic applications. However, the growth of large-area monolayer MoTe2 is challenging. Here, for the first time, we achieve the growth of a centimeter-sized monoclinic MoTe2 monolayer and manifest the mechanism of immobilized precursor particle driven growth. Microscopic characterizations reveal an obvious trend of immobilized precursor particles being consumed by the monolayer and continuing to provide a source for the growth of the monolayer. Time-of-flight secondary ion mass spectrometry verifies the attachment of hydroxide ions on the surface of the MoTe2 monolayer, thereby realizing the inhibition of crystal growth along the [001] zone axis and the continuous growth of the MoTe2 monolayer. The first-principles DFT calculations prove the mechanism of immobilized precursor particles and the absorption of hydroxide ions on the MoTe2 monolayer. The as-grown MoTe2 monolayer exhibits a surface roughness of 0.19 nm and average conductivity of 1.5 × 10-5 S/m, which prove the smoothness and uniformity of the MoTe2 monolayer. Temperature-dependent electrical measurements together with the transfer characteristic curves further demonstrate the typical semimetallic properties of monoclinic MoTe2. Our research elaborates the microscopic process of immobilized precursor particles to grow large-area MoTe2 monolayer and provides a new thinking about the growth of many other two-dimensional materials.
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Affiliation(s)
- Liang Ma
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123 China
| | - Juntong Zhu
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123 China
| | - Wei Li
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123 China
| | - Rong Huang
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 China
| | - Xiangyi Wang
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123 China
| | - Jun Guo
- Testing and Analysis Center, Soochow University, Suzhou 215123, China
| | - Jin-Ho Choi
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123 China
| | - Yanhui Lou
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123 China
| | - Dan Wang
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123 China
| | - Guifu Zou
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123 China
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28
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Zhou Y, Tao L, Chen Z, Lai H, Xie W, Xu JB. Defect Etching of Phase-Transition-Assisted CVD-Grown 2H-MoTe 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2102146. [PMID: 34212490 DOI: 10.1002/smll.202102146] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2021] [Revised: 04/29/2021] [Indexed: 06/13/2023]
Abstract
2D molybdenum ditelluride (MoTe2 ) with polymorphism is a promising candidate to developing phase-change memory, high-performance transistors and spintronic devices. The phase-transition-assisted chemical vapor deposition (CVD) process has been used to prepare large-scale 2H-MoTe2 with large grain size and low density of grain boundary. However, because of the lack of precise control of the growth condition, some defects including the amorphous regions and grain boundaries in 2H-MoTe2 are hardly avoidable. Here, a facile method of selectively etching defects in large-scale CVD-grown 2H-MoTe2 by triiodide ion (I3 - ) solution is reported. The defect etching is attributed to the reduced lattice symmetry, high chemisorption activity and high conductivity of the defects due to the high density of Te vacancies. The treated 2H-MoTe2 shows the suppressed hysteresis in the electrical transfer curve, enhances hole mobility and the higher effective barrier height on the metal contact, suggesting the decreased density of defects. Further chemical analysis indicates that the 2H-MoTe2 is not damaged or doped by I3 - solution during the etching process. This simple and low-cost post-processing method is effective for etching the defects in large-area 2H-MoTe2 for high-performance device applications.
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Affiliation(s)
- Yaoqiang Zhou
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Li Tao
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Zefeng Chen
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Haojie Lai
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, China
| | - Weiguang Xie
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, China
| | - Jian-Bin Xu
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
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Li Y, Wang M, Yi Y, Lu C, Dou S, Sun J. Metallic Transition Metal Dichalcogenides of Group VIB: Preparation, Stabilization, and Energy Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2005573. [PMID: 33734605 DOI: 10.1002/smll.202005573] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/08/2020] [Revised: 10/21/2020] [Indexed: 06/12/2023]
Abstract
Layered transition metal dichalcogenides (TMDs) of group VIB have been widely used in the realms of energy storage and conversions. Along with the existence of semiconducting states, their metallic phases have recently attracted numerous attentions owing to their fascinating physical and chemical properties. Many efforts have been devoted to obtain metallic TMDs with high purity and yield. Nevertheless, such metallic phase is thermodynamically metastable and tends to convert into semiconducting phase, which necessitates the exploration over effective strategies to ensure the stability. In this review, typical fabrication routes are introduced and those critical factors during preparation are elaborately discussed. Moreover, the stabilized strategies are summarized with concrete examples highlighting the key mechanisms toward efficient stabilization. Finally, emerging energy applications are overviewed. This review presents comprehensive research status of metallic group VIB TMDs, aiming to facilitate further scientific investigations and promote future practical applications in the fields of energy storage and conversion.
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Affiliation(s)
- Yihui Li
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, 688 Moye Road, Suzhou, 215006, P. R. China
| | - Menglei Wang
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, 688 Moye Road, Suzhou, 215006, P. R. China
| | - Yuyang Yi
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, 688 Moye Road, Suzhou, 215006, P. R. China
| | - Chen Lu
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, 688 Moye Road, Suzhou, 215006, P. R. China
- Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, NSW, 2522, Australia
| | - Shixue Dou
- Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, NSW, 2522, Australia
| | - Jingyu Sun
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, 688 Moye Road, Suzhou, 215006, P. R. China
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30
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Wang F, Pei K, Li Y, Li H, Zhai T. 2D Homojunctions for Electronics and Optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005303. [PMID: 33644885 DOI: 10.1002/adma.202005303] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2020] [Revised: 09/19/2020] [Indexed: 05/21/2023]
Abstract
In the post-Moore era, 2D materials with rich physical properties have attracted widespread attention from the scientific and industrial communities. Among 2D materials, the 2D homojunctions are of great promise in designing novel electronic and optoelectronic devices due to their unique geometries and properties such as homogeneous components, perfect lattice matching, and efficient charge transfer at the interface. In this article, a pioneering review focusing on the structural design and device application of 2D homojunctions such as p-n homojunctions, heterophase homojunctions, and layer-engineered homojunctions is provided. The preparation strategies to construct 2D homojunctions including vapor-phase deposition, lithium intercalation, laser irradiation, chemical doping, electrostatic doping, and photodoping are summarized in detail. Specifically, a careful review on the applications of the 2D homojunctions in electronics (e.g., field-effect transistors, rectifiers, and inverters) and optoelectronics (e.g., light-emitting diodes, photovoltaics, and photodetectors) is provided. Eventually, the current challenges and future perspectives are commented for promoting the rapid development of 2D homojunctions.
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Affiliation(s)
- Fakun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Ke Pei
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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31
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Han B, Yang C, Xu X, Li Y, Shi R, Liu K, Wang H, Ye Y, Lu J, Yu D, Gao P. Correlating the electronic structures of metallic/semiconducting MoTe 2 interface to its atomic structures. Natl Sci Rev 2021; 8:nwaa087. [PMID: 34691565 PMCID: PMC8288393 DOI: 10.1093/nsr/nwaa087] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/27/2020] [Revised: 04/03/2020] [Accepted: 04/15/2020] [Indexed: 11/13/2022] Open
Abstract
Contact interface properties are important in determining the performances of devices that are based on atomically thin two-dimensional (2D) materials, especially for those with short channels. Understanding the contact interface is therefore important to design better devices. Herein, we use scanning transmission electron microscopy, electron energy loss spectroscopy, and first-principles calculations to reveal the electronic structures within the metallic (1T')-semiconducting (2H) MoTe2 coplanar phase boundary across a wide spectral range and correlate its properties to atomic structures. We find that the 2H-MoTe2 excitonic peaks cross the phase boundary into the 1T' phase within a range of approximately 150 nm. The 1T'-MoTe2 crystal field can penetrate the boundary and extend into the 2H phase by approximately two unit-cells. The plasmonic oscillations exhibit strong angle dependence, that is a red-shift of π+σ (approximately 0.3-1.2 eV) occurs within 4 nm at 1T'/2H-MoTe2 boundaries with large tilt angles, but there is no shift at zero-tilted boundaries. These atomic-scale measurements reveal the structure-property relationships of the 1T'/2H-MoTe2 boundary, providing useful information for phase boundary engineering and device development based on 2D materials.
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Affiliation(s)
- Bo Han
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Department of Material Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Chen Yang
- State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Xiaolong Xu
- State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Yuehui Li
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Ruochen Shi
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Kaihui Liu
- State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Haicheng Wang
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co. Ltd., Beijing, and GRIMAT Engineering Institute Co. Ltd., Beijing 101402, China
| | - Yu Ye
- State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Jing Lu
- State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Dapeng Yu
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
| | - Peng Gao
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
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32
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Kim H, Johns JE, Yoo Y. Mixed-Dimensional In-Plane Heterostructures from 1D Mo 6 Te 6 and 2D MoTe 2 Synthesized by Te-Flux-Controlled Chemical Vapor Deposition. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2002849. [PMID: 33103352 DOI: 10.1002/smll.202002849] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2020] [Revised: 09/04/2020] [Indexed: 06/11/2023]
Abstract
Mixed-dimensional van der Waals heterostructures are scientifically important and practically useful because of their interesting exotic properties resulting from their novel hybrid structures. This study reports the composition- and phase-selective fabrication of low-dimensional molybdenum/tellurium (Mo/Te) compounds and the direct synthesis of mixed-dimensional in-plane 1D-2D Mo6 Te6 -MoTe2 heterostructures. The composition and phase of the Mo/Te compounds are controlled by changing the Te atomic flux that is adjusted by the Te temperature. Metallic 1D Mo6 Te6 wires with an intrinsic 1D structure with a diameter of 3-8 nm and length of 100-300 nm are synthesized to form wire networks under low Te flux conditions, whereas the semiconducting few-layer 2H MoTe2 films preferentially oriented along the <0001> direction are obtained under high Te flux. Under medium Te flux, the mixed-dimensional in-plane 1D-2D Mo6 Te6 -MoTe2 heterostructures are synthesized in which the semiconducting few-layer 2H MoTe2 circular domains are edge-contacted by the metallic 1D Mo6 Te6 wire networks. Furthermore, the present Te-flux-controlled method reveals that the 1D Mo6 Te6 networks change to few-layer MoTe2 films as the Te flux increases. The in-plane 1D-2D Mo6 Te6 -MoTe2 heterostructures synthesized by this method can be considered as advanced edge-contacted 2D semiconductors for high-performance 2D electronics.
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Affiliation(s)
- Hyeonkyeong Kim
- Department of Chemistry, Ajou University, Suwon, 16499, Korea
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Korea
| | - James E Johns
- Department of Chemistry, University of Minnesota, Minneapolis, MN, 55455, USA
| | - Youngdong Yoo
- Department of Chemistry, Ajou University, Suwon, 16499, Korea
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33
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Wang M, Li D, Liu K, Guo Q, Wang S, Li X. Nonlinear Optical Imaging, Precise Layer Thinning, and Phase Engineering in MoTe 2 with Femtosecond Laser. ACS NANO 2020; 14:11169-11177. [PMID: 32816458 DOI: 10.1021/acsnano.0c02649] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The control of layer thickness and phase structure in two-dimensional transition metal dichalcogenides (2D TMDCs) like MoTe2 has recently gained much attention due to their broad applications in nanoelectronics and nanophotonics. Continuous-wave laser-based thermal treatment has been demonstrated to realize layer thinning and phase engineering in MoTe2, but requires long heating time and is largely influenced by the thermal dissipation of the substrate. The ultrafast laser produces a different response but is yet to be explored. In this work, we report the nonlinear optical interactions between MoTe2 crystals and femtosecond (fs) laser, where we have realized the nonlinear optical characterization, precise layer thinning, and phase transition in MoTe2 using a single fs laser platform. By using the fs laser with a low fluence as an excitation light source, we observe the strong nonlinear optical signals of second-harmonic generation and four-wave mixing in MoTe2, which can be used to identify the odd-even layers and layer numbers, respectively. With increasing the laser fluence to the ablation threshold (Fth), we achieve layer-by-layer removal of MoTe2, while 2H-to-1T' phase transition occurs with a higher laser fluence (2Fth to 3Fth). Moreover, we obtain highly ordered subwavelength nanoripples on both the thick and few-layer MoTe2 with a controlled fluence, which can be attributed to the fs laser-induced reorganization of the molten plasma. Our study provides a simple and efficient ultrafast laser-based approach capable of characterizing the structures and modifying the physical properties of 2D TMDCs.
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Affiliation(s)
- Mengmeng Wang
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Dawei Li
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, United States
| | - Kun Liu
- School of Optoelectronic Engineering and Instrument Science, Dalian University of Technology, Dalian, Liaoning 116024, China
| | - Qitong Guo
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Sumei Wang
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Xin Li
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China
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Xu X, Han B, Liu S, Yang S, Jia X, Xu W, Gao P, Ye Y, Dai L. Atomic-Precision Repair of a Few-Layer 2H-MoTe 2 Thin Film by Phase Transition and Recrystallization Induced by a Heterophase Interface. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2000236. [PMID: 32329549 DOI: 10.1002/adma.202000236] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2020] [Revised: 03/26/2020] [Accepted: 04/02/2020] [Indexed: 06/11/2023]
Abstract
2D semiconductors have emerged as promising candidates for post-silicon nanoelectronics, owing to their unique properties and atomic thickness. However, in the handling of 2D material, various forms of macroscopic damage, such as cracks, wrinkles, and scratches, etc., are usually introduced, which cause adverse effects on the material properties and device performance. Repairing such macroscopic damage is crucial for improving device performance and reliability, especially for large-scale 2D device arrays. Here, a method is demonstrated repair damage to few-layer 2H-MoTe2 films with atomic precision, and its mechanism is elucidated. The repaired 2H-MoTe2 inherits the lattice orientation of the adjacent original 2H-MoTe2 , thereby forming an atomically perfect lattice at the repaired interface. The time-evolution experiments show that the interface between the 2H- and early formed 1T'-MoTe2 plays an important role in the subsequent phase transition and recrystallization. Electrical measurements on the original MoTe2 , repaired MoTe2 , and cross-interface regions show unobservable differences, indicating that the repaired MoTe2 has the same electrical quality as the original one and the interface does not introduce extra scattering centers for carrier transport. The findings provide an effective strategy for macroscopic damage repair of few-layer 2H-MoTe2 , which paves the way for its practical application in advanced electronics and optoelectronics.
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Affiliation(s)
- Xiaolong Xu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Bo Han
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Shuai Liu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Shiqi Yang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Xionghui Jia
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Wanjin Xu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Peng Gao
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| | - Yu Ye
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| | - Lun Dai
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
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35
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Sokolikova MS, Mattevi C. Direct synthesis of metastable phases of 2D transition metal dichalcogenides. Chem Soc Rev 2020; 49:3952-3980. [PMID: 32452481 DOI: 10.1039/d0cs00143k] [Citation(s) in RCA: 70] [Impact Index Per Article: 17.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The different polymorphic phases of transition metal dichalcogenides (TMDs) have attracted enormous interest in the last decade. The metastable metallic and small band gap phases of group VI TMDs displayed leading performance for electrocatalytic hydrogen evolution, high volumetric capacitance and some of them exhibit large gap quantum spin Hall (QSH) insulating behaviour. Metastable 1T(1T') phases require higher formation energy, as compared to the thermodynamically stable 2H phase, thus in standard chemical vapour deposition and vapour transport processes the materials normally grow in the 2H phases. Only destabilization of their 2H phase via external means, such as charge transfer or high electric field, allows the conversion of the crystal structure into the 1T(1T') phase. Bottom-up synthesis of materials in the 1T(1T') phases in measurable quantities would broaden their prospective applications and practical utilization. There is an emerging evidence that some of these 1T(1T') phases can be directly synthesized via bottom-up vapour- and liquid-phase methods. This review will provide an overview of the synthesis strategies which have been designed to achieve the crystal phase control in TMDs, and the chemical mechanisms that can drive the synthesis of metastable phases. We will provide a critical comparison between growth pathways in vapour- and liquid-phase synthesis techniques. Morphological and chemical characteristics of synthesized materials will be described along with their ability to act as electrocatalysts for the hydrogen evolution reaction from water. Phase stability and reversibility will be discussed and new potential applications will be introduced. This review aims at providing insights into the fundamental understanding of the favourable synthetic conditions for the stabilization of metastable TMD crystals and at stimulating future advancements in the field of large-scale synthesis of materials with crystal phase control.
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36
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Sakanashi K, Ouchi H, Kamiya K, Krüger P, Miyamoto K, Omatsu T, Ueno K, Watanabe K, Taniguchi T, Bird JP, Aoki N. Investigation of laser-induced-metal phase of MoTe 2 and its contact property via scanning gate microscopy. NANOTECHNOLOGY 2020; 31:205205. [PMID: 32000160 DOI: 10.1088/1361-6528/ab71b8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Although semiconductor to metal phase transformation of MoTe2 by high-density laser irradiation of more than 0.3 MW cm-2 has been reported, we reveal that the laser-induced-metal (LIM) phase is not the 1T' structure derived by a polymorphic-structural phase transition but consists instead of semi-metallic Te induced by photo-thermal decomposition of MoTe2. The technique is used to fabricate a field effect transistor with a Pd/2H-MoTe2/LIM structure having an asymmetric metallic contact, and its contact properties are studied via scanning gate microscopy. We confirm that a Schottky barrier (a diffusion potential) is always formed at the Pd/2H-MoTe2 boundary and obstacles a carrier transport while an Ohmic contact is realized at the 2H-MoTe2/LIM phase junction for both n- and p-type carriers.
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Affiliation(s)
- Kohei Sakanashi
- Department of Materials Science, Chiba University, Chiba, 263-8522, Japan
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37
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Qian Z, Jiao L, Xie L. Phase Engineering of
Two‐Dimensional
Transition Metal Dichalcogenides. CHINESE J CHEM 2020. [DOI: 10.1002/cjoc.202000064] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Ziyue Qian
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology Beijing 100190 China
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University Beijing 100084 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Liying Jiao
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University Beijing 100084 China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
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38
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Yuan J, Chen Y, Xie Y, Zhang X, Rao D, Guo Y, Yan X, Feng YP, Cai Y. Squeezed metallic droplet with tunable Kubo gap and charge injection in transition metal dichalcogenides. Proc Natl Acad Sci U S A 2020; 117:6362-6369. [PMID: 32161125 PMCID: PMC7104306 DOI: 10.1073/pnas.1920036117] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Shrinking the size of a bulk metal into nanoscale leads to the discreteness of electronic energy levels, the so-called Kubo gap δ. Renormalization of the electronic properties with a tunable and size-dependent δ renders fascinating photon emission and electron tunneling. In contrast with usual three-dimensional (3D) metal clusters, here we demonstrate that Kubo gap δ can be achieved with a two-dimensional (2D) metallic transition metal dichalcogenide (i.e., 1T'-phase MoTe2) nanocluster embedded in a semiconducting polymorph (i.e., 1H-phase MoTe2). Such a 1T'/1H MoTe2 nanodomain resembles a 3D metallic droplet squeezed in a 2D space which shows a strong polarization catastrophe while simultaneously maintaining its bond integrity, which is absent in traditional δ-gapped 3D clusters. The weak screening of the host 2D MoTe2 leads to photon emission of such pseudometallic systems and a ballistic injection of carriers in the 1T'/1H/1T' homojunctions which may find applications in sensors and 2D reconfigurable devices.
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Affiliation(s)
- Jiaren Yuan
- College of Science, Jiangsu University, 212013 Zhenjiang, China
- School of Material Science and Engineering, Jiangsu University, 212013 Zhenjiang, China
- Department of Physics, National University of Singapore, 117551 Singapore
| | - Yuanping Chen
- College of Science, Jiangsu University, 212013 Zhenjiang, China
| | - Yuee Xie
- College of Science, Jiangsu University, 212013 Zhenjiang, China
| | - Xiaoyu Zhang
- School of Material Science and Engineering, Jiangsu University, 212013 Zhenjiang, China
| | - Dewei Rao
- School of Material Science and Engineering, Jiangsu University, 212013 Zhenjiang, China
| | - Yandong Guo
- College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, 210046 Nanjing, China
| | - Xiaohong Yan
- College of Science, Jiangsu University, 212013 Zhenjiang, China;
- School of Material Science and Engineering, Jiangsu University, 212013 Zhenjiang, China
| | - Yuan Ping Feng
- Department of Physics, National University of Singapore, 117551 Singapore;
- Centre for Advanced Two-Dimensional Materials, National University of Singapore, 117551 Singapore
| | - Yongqing Cai
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China
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Castelino R, Pham TT, Felten A, Sporken R. Substrate temperature dependence of the crystalline quality for the synthesis of pure-phase MoTe 2 on graphene/6H-SiC(0001) by molecular beam epitaxy. NANOTECHNOLOGY 2020; 31:115702. [PMID: 31770732 DOI: 10.1088/1361-6528/ab5be9] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
MoTe2 has two stable solid phases. 2H-MoTe2 is semiconducting while 1T' is semimetallic. The selective synthesis of pure-phase thin films is still challenging. In this study, we have investigated the growth temperature dependence of MoTe2 synthesized by molecular beam epitaxy and have identified the optimum temperature for growing the stoichiometric films. It is confirmed that the crystalline quality of MoTe2 strongly depends on the substrate temperature. Post-growth annealing of grown layers at 400 °C stabilizes the semiconducting phase. The structural properties and the phase change in our materials are analyzed in details by reflection high energy electron diffraction, low energy electron diffraction, auger electron spectroscopy, x-ray photoemission spectroscopy, and scanning tunneling microscopy.
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Affiliation(s)
- Roshan Castelino
- Namur Institute of Structured Matter (NISM), Department of Physics, University of Namur, 61 Rue de Bruxelles, B-5000 Namur, Belgium
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40
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He Q, Li P, Wu Z, Yuan B, Luo Z, Yang W, Liu J, Cao G, Zhang W, Shen Y, Zhang P, Liu S, Shao G, Yao Z. Molecular Beam Epitaxy Scalable Growth of Wafer-Scale Continuous Semiconducting Monolayer MoTe 2 on Inert Amorphous Dielectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1901578. [PMID: 31199026 DOI: 10.1002/adma.201901578] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2019] [Revised: 05/08/2019] [Indexed: 06/09/2023]
Abstract
Monolayer MoTe2 , with the narrowest direct bandgap of ≈1.1 eV among Mo- and W-based transition metal dichalcogenides, has attracted increasing attention as a promising candidate for applications in novel near-infrared electronics and optoelectronics. Realizing 2D lateral growth is an essential prerequisite for uniform thickness and property control over the large scale, while it is not successful yet. Here, layer-by-layer growth of 2 in. wafer-scale continuous monolayer 2H-MoTe2 films on inert SiO2 dielectrics by molecular beam epitaxy is reported. A single-step Mo-flux controlled nucleation and growth process is developed to suppress island growth. Atomically flat 2H-MoTe2 with 100% monolayer coverage is successfully grown on inert 2 in. SiO2 /Si wafer, which exhibits highly uniform in-plane structural continuity and excellent phonon-limited carrier transport behavior. The dynamics-controlled growth recipe is also extended to fabricate continuous monolayer 2H-MoTe2 on atomic-layer-deposited Al2 O3 dielectric. With the breakthrough in growth of wafer-scale continuous 2H-MoTe2 monolayers on device compatible dielectrics, batch fabrication of high-mobility monolayer 2H-MoTe2 field-effect transistors and the three-level integration of vertically stacked monolayer 2H-MoTe2 transistor arrays for 3D circuitry are successfully demonstrated. This work provides novel insights into the scalable synthesis of monolayer 2H-MoTe2 films on universal substrates and paves the way for the ultimate miniaturization of electronics.
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Affiliation(s)
- Qingyuan He
- State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Pengji Li
- State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Zhiheng Wu
- State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Bin Yuan
- Process Research R&D Array Technology Department, Visionox Technology Co., Ltd., Gu'an New Industry Park, Langfang, 065500, P. R. China
| | - Zhongtao Luo
- State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Wenlong Yang
- State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Jie Liu
- State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Guoqin Cao
- State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
- Institutes for Renewable Energy and Environmental Technologies, University of Bolton, Bolton, BL3 5AB, UK
| | - Wenfeng Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yonglong Shen
- State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Peng Zhang
- State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Suilin Liu
- Analytical & Testing Center, Sichuan University, Chengdu, 610064, P. R. China
| | - Guosheng Shao
- State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Zhiqiang Yao
- State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
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41
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Ma R, Zhang H, Yoo Y, Degregorio ZP, Jin L, Golani P, Ghasemi Azadani J, Low T, Johns JE, Bendersky LA, Davydov AV, Koester SJ. MoTe 2 Lateral Homojunction Field-Effect Transistors Fabricated using Flux-Controlled Phase Engineering. ACS NANO 2019; 13:8035-8046. [PMID: 31247141 DOI: 10.1021/acsnano.9b02785] [Citation(s) in RCA: 38] [Impact Index Per Article: 7.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/19/2023]
Abstract
The coexistence of metallic and semiconducting polymorphs in transition-metal dichalcogenides (TMDCs) can be utilized to solve the large contact resistance issue in TMDC-based field effect transistors (FETs). A semiconducting hexagonal (2H) molybdenum ditelluride (MoTe2) phase, metallic monoclinic (1T') MoTe2 phase, and their lateral homojunctions can be selectively synthesized in situ by chemical vapor deposition due to the small free energy difference between the two phases. Here, we have investigated, in detail, the structural and electrical properties of in situ-grown lateral 2H/1T' MoTe2 homojunctions grown using flux-controlled phase engineering. Using atomic-resolution plan-view and cross-sectional transmission electron microscopy analyses, we show that the round regions of near-single-crystalline 2H-MoTe2 grow out of a polycrystalline 1T'-MoTe2 matrix. We further demonstrate the operation of MoTe2 FETs made on these in situ-grown lateral homojunctions with 1T' contacts. The use of a 1T' phase as electrodes in MoTe2 FETs effectively improves the device performance by substantially decreasing the contact resistance. The contact resistance of 1T' electrodes extracted from transfer length method measurements is 470 ± 30 Ω·μm. Temperature- and gate-voltage-dependent transport characteristics reveal a flat-band barrier height of ∼30 ± 10 meV at the lateral 2H/1T' interface that is several times smaller and shows a stronger gate modulation, compared to the metal/2H Schottky barrier height. The information learned from this analysis will be critical to understanding the properties of MoTe2 homojunction FETs for use in memory and logic circuity applications.
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Affiliation(s)
- Rui Ma
- Department of Electrical and Computer Engineering , University of Minnesota , Minneapolis , Minnesota 55455 , United States
| | - Huairuo Zhang
- Theiss Research, Inc. , La Jolla , California 92037 , United States
- Materials Science and Engineering Division , National Institute of Standards and Technology (NIST) , Gaithersburg , Maryland 20899 , United States
| | - Youngdong Yoo
- Department of Chemistry , Ajou University , Suwon 16499 , Korea
| | | | - Lun Jin
- Department of Chemistry , University of Minnesota , Minneapolis , Minnesota 55455 , United States
| | - Prafful Golani
- Department of Electrical and Computer Engineering , University of Minnesota , Minneapolis , Minnesota 55455 , United States
| | - Javad Ghasemi Azadani
- Department of Electrical and Computer Engineering , University of Minnesota , Minneapolis , Minnesota 55455 , United States
| | - Tony Low
- Department of Electrical and Computer Engineering , University of Minnesota , Minneapolis , Minnesota 55455 , United States
| | - James E Johns
- Department of Chemistry , University of Minnesota , Minneapolis , Minnesota 55455 , United States
| | - Leonid A Bendersky
- Materials Science and Engineering Division , National Institute of Standards and Technology (NIST) , Gaithersburg , Maryland 20899 , United States
| | - Albert V Davydov
- Materials Science and Engineering Division , National Institute of Standards and Technology (NIST) , Gaithersburg , Maryland 20899 , United States
| | - Steven J Koester
- Department of Electrical and Computer Engineering , University of Minnesota , Minneapolis , Minnesota 55455 , United States
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42
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Sun Y, Zhuang P, Jiang W, Xu H, Zhang S, Xuan N, Ba K, Liu H, Wang J, Bao W, Shen J, Sun Z. Phase, Conductivity, and Surface Coordination Environment in Two-Dimensional Electrochemistry. ACS APPLIED MATERIALS & INTERFACES 2019; 11:25108-25114. [PMID: 31268649 DOI: 10.1021/acsami.9b03673] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The booming frontier of electrochemistry is radically transforming the landscape of global chemical and energy industry. Most recent advancements in electrocatalysts have been built on trial and error, lacking model experiments to illuminate the fundamental factors hidden behind, such as phase, conductivity, and surface coordination environment. Here, we use phase-controllable, highly oriented two-dimensional MoTe2 as the model catalysts. The 2H phase MoTe2's conductivity can be engineered both extrinsically and intrinsically by single-layer graphene and lithiation, bringing down the sheet resistance from 0.95 MΩ/□ to 0.8 kΩ/□ and 0.6 kΩ/□. The corresponding electrocatalytic performance was unlocked from a silent state, catching up to its 1T' counterpart, with a parallel Tafel slope of 141 mV/dec. A focused ion beam further exposed the edge atoms, which exhibited a hydrogen evolution turnover frequency 104 times superior to that of basal plane atoms.
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Affiliation(s)
| | | | - Wei Jiang
- Shanghai Institute of Technical Physics of the Chinese Academy of Sciences , Shanghai 200083 , P. R. China
| | | | | | | | | | | | - Jianlu Wang
- Shanghai Institute of Technical Physics of the Chinese Academy of Sciences , Shanghai 200083 , P. R. China
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43
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Ávalos-Ovando O, Mastrogiuseppe D, Ulloa SE. Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:213001. [PMID: 30794993 DOI: 10.1088/1361-648x/ab0970] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The growth and exfoliation of two-dimensional (2D) materials have led to the creation of edges and novel interfacial states at the juncture between crystals with different composition or phases. These hybrid heterostructures (HSs) can be built as vertical van der Waals stacks, resulting in a 2D interface, or as stitched adjacent monolayer crystals, resulting in one-dimensional (1D) interfaces. Although most attention has been focused on vertical HSs, increasing theoretical and experimental interest in 1D interfaces is evident. In-plane interfacial states between different 2D materials inherit properties from both crystals, giving rise to robust states with unique 1D non-parabolic dispersion and strong spin-orbit effects. With such unique characteristics, these states provide an exciting platform for realizing 1D physics. Here, we review and discuss advances in 1D heterojunctions, with emphasis on theoretical approaches for describing those between semiconducting transition metal dichalcogenides MX 2 (with M = Mo, W and X = S, Se, Te), and how the interfacial states can be characterized and utilized. We also address how the interfaces depend on edge geometries (such as zigzag and armchair) or strain, as lattice parameters differ across the interface, and how these features affect excitonic/optical response. This review is intended to serve as a resource for promoting theoretical and experimental studies in this rapidly evolving field.
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Affiliation(s)
- O Ávalos-Ovando
- Department of Physics and Astronomy, and Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, OH 45701-2979, United States of America
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44
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Zhang X, Jin Z, Wang L, Hachtel JA, Villarreal E, Wang Z, Ha T, Nakanishi Y, Tiwary CS, Lai J, Dong L, Yang J, Vajtai R, Ringe E, Idrobo JC, Yakobson BI, Lou J, Gambin V, Koltun R, Ajayan PM. Low Contact Barrier in 2H/1T' MoTe 2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES 2019; 11:12777-12785. [PMID: 30854848 DOI: 10.1021/acsami.9b00306] [Citation(s) in RCA: 33] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Metal-semiconductor contact has been a critical topic in the semiconductor industry because it influences device performance remarkably. Conventional metals have served as the major contact material in electronic and optoelectronic devices, but such a selection becomes increasingly inadequate for emerging novel materials such as two-dimensional (2D) materials. Deposited metals on semiconducting 2D channels usually form large resistance contacts due to the high Schottky barrier. A few approaches have been reported to reduce the contact resistance but they are not suitable for large-scale application or they cannot create a clean and sharp interface. In this study, a chemical vapor deposition (CVD) technique is introduced to produce large-area semiconducting 2D material (2H MoTe2) planarly contacted by its metallic phase (1T' MoTe2). We demonstrate the phase-controllable synthesis and systematic characterization of large-area MoTe2 films, including pure 2H phase or 1T' phase, and 2H/1T' in-plane heterostructure. Theoretical simulation shows a lower Schottky barrier in 2H/1T' junction than in Ti/2H contact, which is confirmed by electrical measurement. This one-step CVD method to synthesize large-area, seamless-bonding 2D lateral metal-semiconductor junction can improve the performance of 2D electronic and optoelectronic devices, paving the way for large-scale 2D integrated circuits.
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Affiliation(s)
| | | | | | - Jordan A Hachtel
- Center for Nanophase Materials Sciences , Oak Ridge National Laboratory , Oak Ridge , Tennessee 37831 , United States
| | | | | | - Teresa Ha
- NG Next, Northrop Grumman Corporation , Redondo Beach , California 90278 , United States
| | | | - Chandra Sekhar Tiwary
- Metallurgical and Materials Engineering , Indian Institute of Technology Kharagpur , West Bengal 721301 , India
| | | | | | | | - Robert Vajtai
- Interdisciplinary Excellence Centre, Department of Applied and Environmental Chemistry, University of Szeged, Rerrich Béla tér1. , Szeged , Hungary
| | | | - Juan Carlos Idrobo
- Center for Nanophase Materials Sciences , Oak Ridge National Laboratory , Oak Ridge , Tennessee 37831 , United States
| | | | | | - Vincent Gambin
- NG Next, Northrop Grumman Corporation , Redondo Beach , California 90278 , United States
| | - Rachel Koltun
- NG Next, Northrop Grumman Corporation , Redondo Beach , California 90278 , United States
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45
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Xu X, Chen S, Liu S, Cheng X, Xu W, Li P, Wan Y, Yang S, Gong W, Yuan K, Gao P, Ye Y, Dai L. Millimeter-Scale Single-Crystalline Semiconducting MoTe 2 via Solid-to-Solid Phase Transformation. J Am Chem Soc 2019; 141:2128-2134. [PMID: 30633514 DOI: 10.1021/jacs.8b12230] [Citation(s) in RCA: 49] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/13/2023]
Abstract
Among the Mo- and W-based two-dimensional (2D) transition metal dichalcogenides, MoTe2 is particularly interesting for phase-engineering applications, because it has the smallest free energy difference between the semiconducting 2H phase and metallic 1T' phase. In this work, we reveal that, under the proper circumstance, Mo and Te atoms can rearrange themselves to transform from a polycrystalline 1T' phase into a single-crystalline 2H phase in a large scale. We manifest the mechanisms of the solid-to-solid transformation by conducting density functional theory calculations, transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy. The phase transformation is well described by the time-temperature-transformation diagram. By optimizing the kinetic rates of nucleation and crystal growth, we have synthesized a single-crystalline 2H-MoTe2 domain with a diameter of 2.34 mm, a centimeter-scale 2H-MoTe2 thin film with a domain size up to several hundred micrometers, and a seamless 1T'-2H MoTe2 coplanar homojunction. The 1T'-2H MoTe2 homojunction provides an elegant solution for ohmic contact of 2D semiconductors. The controlled solid-to-solid phase transformation in 2D limit provides a new route to realize wafer-scale single-crystalline 2D semiconductor and coplanar heterostructure for 2D circuitry.
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Affiliation(s)
- Xiaolong Xu
- State Key Lab for Artificial Microstructure & Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , China.,Collaborative Innovation Center of Quantum Matter , Beijing 100871 , China
| | - Shulin Chen
- Electron Microscopy Laboratory, School of Physics , Peking University , Beijing 100871 , China
| | - Shuai Liu
- State Key Lab for Artificial Microstructure & Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , China
| | - Xing Cheng
- State Key Lab for Artificial Microstructure & Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , China
| | - Wanjin Xu
- State Key Lab for Artificial Microstructure & Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , China
| | - Pan Li
- State Key Lab for Artificial Microstructure & Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , China
| | - Yi Wan
- State Key Lab for Artificial Microstructure & Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , China
| | - Shiqi Yang
- State Key Lab for Artificial Microstructure & Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , China.,Academy for Advanced Interdisciplinary Studies , Peking University , Beijing 100871 , China
| | - Wenting Gong
- State Key Lab for Artificial Microstructure & Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , China
| | - Kai Yuan
- State Key Lab for Artificial Microstructure & Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , China
| | - Peng Gao
- Collaborative Innovation Center of Quantum Matter , Beijing 100871 , China.,Electron Microscopy Laboratory, School of Physics , Peking University , Beijing 100871 , China.,International Center for Quantum Materials, School of Physics , Peking University , Beijing 100871 , China
| | - Yu Ye
- State Key Lab for Artificial Microstructure & Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , China.,Collaborative Innovation Center of Quantum Matter , Beijing 100871 , China
| | - Lun Dai
- State Key Lab for Artificial Microstructure & Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , China.,Collaborative Innovation Center of Quantum Matter , Beijing 100871 , China
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46
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Da Silva ACH, Caturello NAMS, Besse R, Lima MP, Da Silva JLF. Edge, size, and shape effects on WS2, WSe2, and WTe2 nanoflake stability: design principles from an ab initio investigation. Phys Chem Chem Phys 2019; 21:23076-23084. [DOI: 10.1039/c9cp03698a] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The magic nanoflakes, obtained by the evaluation of the relative stability function, are n = 9 and 14 for all chemical compositions, whereas n = 12 is a magic number for WS2 and WSe2.
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Affiliation(s)
| | | | - Rafael Besse
- São Carlos Institute of Physics
- University of São Paulo
- São Carlos
- Brazil
| | - Matheus P. Lima
- Department of Physics
- Federal University of São Carlos
- São Carlos
- Brazil
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47
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Yang L, Wu H, Zhang W, Chen Z, Li J, Lou X, Xie Z, Zhu R, Chang H. Anomalous oxidation and its effect on electrical transport originating from surface chemical instability in large-area, few-layer 1T'-MoTe 2 films. NANOSCALE 2018; 10:19906-19915. [PMID: 30346016 DOI: 10.1039/c8nr05699d] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Two-dimensional (Mo,W)Te2 films have recently attracted significant research interest as electronic device channel materials, topological insulators and Weyl semimetals. However, one critical concern that can hamper their diverse applications is surface chemical instability due to weak Mo(W)-Te bond energy reflected in the small electronegativity difference between Mo(W) and Te, which fundamentally induces unpredictable surface oxidation and remarkably affects the film electrical transport. Here, for the first time, we clarify an anomalous oxidation featuring an unbalanced oxidation process in large-area, few-layer 1T'-MoTe2, which originates from the surface chemical instability. We identify the oxidation temperature, oxygen flow rate, structural polymorphism, and atomic chemical bond electronegativity that dominate preferential surface oxidation, which can be monitored by the appearance and decomposition of Raman-active Te metalloids. Importantly, we verify the formation of an ultrathin natural amorphous MoO3-TeO2 surface layer with an approximate self-limiting thickness that significantly affects the transport properties of the underlying few-layer 1T'-MoTe2 film. We also reveal a similar oxidation tendency in few-layer 2H-MoTe2 and 1T'-WTe2 but with a higher resistance to oxidation than 1T'-MoTe2 due to their inherent phase stability. Our findings not only represent a strong advancement in understanding surface chemical instability of atomically thin 2D TMDC materials, but also highlight technically essential importance of constructing ultrathin natural oxide dielectrics/TMDC interfaces with a controllable surface oxidation process for atomically thin TMDC-based devices.
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Affiliation(s)
- Li Yang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
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48
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Kwak J, Jo Y, Song S, Kim JH, Kim SY, Lee JU, Lee S, Park J, Kim K, Lee GD, Yoo JW, Kim SY, Kong YM, Lee GH, Lee WG, Park J, Xu X, Cheong H, Yoon E, Lee Z, Kwon SY. Single-Crystalline Nanobelts Composed of Transition Metal Ditellurides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1707260. [PMID: 29882243 DOI: 10.1002/adma.201707260] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2017] [Revised: 04/23/2018] [Indexed: 06/08/2023]
Abstract
Following the celebrated discovery of graphene, considerable attention has been directed toward the rich spectrum of properties offered by van der Waals crystals. However, studies have been largely limited to their 2D properties due to lack of 1D structures. Here, the growth of high-yield, single-crystalline 1D nanobelts composed of transition metal ditellurides at low temperatures (T ≤ 500 °C) and in short reaction times (t ≤ 10 min) via the use of tellurium-rich eutectic metal alloys is reported. The synthesized semimetallic 1D products are highly pure, stoichiometric, structurally uniform, and free of defects, resulting in high electrical performances. Furthermore, complete compositional tuning of the ternary ditelluride nanobelts is achieved with suppressed phase separation, applicable to the creation of unprecedented low-dimensional materials/devices. This approach may inspire new growth/fabrication strategies of 1D layered nanostructures, which may offer unique properties that are not available in other materials.
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Affiliation(s)
- Jinsung Kwak
- School of Materials Science and Engineering & Low-Dimensional Carbon Material Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Yongsu Jo
- School of Materials Science and Engineering & Low-Dimensional Carbon Material Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Seunguk Song
- School of Materials Science and Engineering & Low-Dimensional Carbon Material Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Jung Hwa Kim
- School of Materials Science and Engineering & Low-Dimensional Carbon Material Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Se-Yang Kim
- School of Materials Science and Engineering & Low-Dimensional Carbon Material Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Jae-Ung Lee
- Department of Physics, Sogang University, Seoul, 04107, Republic of Korea
| | - Sungwoo Lee
- Department of Materials Science and Engineering & Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Jungmin Park
- School of Materials Science and Engineering & Low-Dimensional Carbon Material Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Kangwon Kim
- Department of Physics, Sogang University, Seoul, 04107, Republic of Korea
| | - Gun-Do Lee
- Department of Materials Science and Engineering & Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Jung-Woo Yoo
- School of Materials Science and Engineering & Low-Dimensional Carbon Material Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Sung Youb Kim
- School of Mechanical, Aerospace, and Nuclear Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Young-Min Kong
- School of Materials Science and Engineering, University of Ulsan, Ulsan, 44610, Republic of Korea
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Yonsei University, Seoul, 03772, Republic of Korea
| | - Wan-Gyu Lee
- Global Nanotechnology Development Team, National NanoFab Center, Daejeon, 34141, Republic of Korea
| | - Jucheol Park
- Gumi Electronics & Information Technology Research Institute, Gumi, 39171, Republic of Korea
| | - Xiaodong Xu
- Department of Physics & Department of Materials Science and Engineering, University of Washington, Seattle, WA, 98105, USA
| | - Hyeonsik Cheong
- Department of Physics, Sogang University, Seoul, 04107, Republic of Korea
| | - Euijoon Yoon
- Department of Materials Science and Engineering & Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Zonghoon Lee
- School of Materials Science and Engineering & Low-Dimensional Carbon Material Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Soon-Yong Kwon
- School of Materials Science and Engineering & Low-Dimensional Carbon Material Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
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49
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Samadi M, Sarikhani N, Zirak M, Zhang H, Zhang HL, Moshfegh AZ. Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives. NANOSCALE HORIZONS 2018; 3:90-204. [PMID: 32254071 DOI: 10.1039/c7nh00137a] [Citation(s) in RCA: 116] [Impact Index Per Article: 19.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Group 6 transition metal dichalcogenides (G6-TMDs), most notably MoS2, MoSe2, MoTe2, WS2 and WSe2, constitute an important class of materials with a layered crystal structure. Various types of G6-TMD nanomaterials, such as nanosheets, nanotubes and quantum dot nano-objects and flower-like nanostructures, have been synthesized. High thermodynamic stability under ambient conditions, even in atomically thin form, made nanosheets of these inorganic semiconductors a valuable asset in the existing library of two-dimensional (2D) materials, along with the well-known semimetallic graphene and insulating hexagonal boron nitride. G6-TMDs generally possess an appropriate bandgap (1-2 eV) which is tunable by size and dimensionality and changes from indirect to direct in monolayer nanosheets, intriguing for (opto)electronic, sensing, and solar energy harvesting applications. Moreover, rich intercalation chemistry and abundance of catalytically active edge sites make them promising for fabrication of novel energy storage devices and advanced catalysts. In this review, we provide an overview on all aspects of the basic science, physicochemical properties and characterization techniques as well as all existing production methods and applications of G6-TMD nanomaterials in a comprehensive yet concise treatment. Particular emphasis is placed on establishing a linkage between the features of production methods and the specific needs of rapidly growing applications of G6-TMDs to develop a production-application selection guide. Based on this selection guide, a framework is suggested for future research on how to bridge existing knowledge gaps and improve current production methods towards technological application of G6-TMD nanomaterials.
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Affiliation(s)
- Morasae Samadi
- Department of Physics, Sharif University of Technology, Tehran 11155-9161, Iran.
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50
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Lei B, Pan Y, Hu Z, Zhang J, Xiang D, Zheng Y, Guo R, Han C, Wang L, Lu J, Yang L, Chen W. Direct Observation of Semiconductor-Metal Phase Transition in Bilayer Tungsten Diselenide Induced by Potassium Surface Functionalization. ACS NANO 2018; 12:2070-2077. [PMID: 29369617 DOI: 10.1021/acsnano.8b00398] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Structures determine properties of materials, and controllable phase transitions are, therefore, highly desirable for exploring exotic physics and fabricating devices. We report a direct observation of a controllable semiconductor-metal phase transition in bilayer tungsten diselenide (WSe2) with potassium (K) surface functionalization. Through the integration of in situ field-effect transistors, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy measurements, and first-principles calculations, we identify that the electron doping from K adatoms drives bilayer WSe2 from a 2H phase semiconductor to a 1T' phase metal. The phase transition mechanism is satisfactorily explained by the electronic structures and energy alignment of the 2H and 1T' phases. This explanation can be generally applied to understand doping-induced phase transitions in two-dimensional (2D) structures. Finally, the associated dramatic changes of electronic structures and electrical conductance make this controllable semiconductor-metal phase transition of interest for 2D semiconductor-based electronic and optoelectronic devices.
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Affiliation(s)
- Bo Lei
- National University of Singapore (Suzhou) Research Institute , 377 Lin Quan Street, Suzhou, Jiang Su 215123, China
- Department of Physics, National University of Singapore , 117542 Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , 6 Science Drive 2, Singapore 117546
| | - Yuanyuan Pan
- Department of Physics and Institute of Materials Science and Engineering, Washington University in St. Louis , St. Louis, Missouri 63130, United States
- State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University , Beijing 100871, China
| | - Zehua Hu
- National University of Singapore (Suzhou) Research Institute , 377 Lin Quan Street, Suzhou, Jiang Su 215123, China
- Department of Physics, National University of Singapore , 117542 Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , 6 Science Drive 2, Singapore 117546
| | - Jialin Zhang
- Department of Physics, National University of Singapore , 117542 Singapore
- Department of Chemistry, National University of Singapore , Singapore 117543
| | - Du Xiang
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , 6 Science Drive 2, Singapore 117546
- Department of Chemistry, National University of Singapore , Singapore 117543
| | - Yue Zheng
- Department of Physics, National University of Singapore , 117542 Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , 6 Science Drive 2, Singapore 117546
| | - Rui Guo
- Department of Chemistry, National University of Singapore , Singapore 117543
| | - Cheng Han
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen University , Shenzhen 518060, China
| | - Lianhui Wang
- Key Laboratory for Organic Electronics & Information Displays (KLOEID), Institute of Advanced Materials (IAM), Jiangsu National Syngerstic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts &Telecommunications , 9 Wenyuan Road, Nanjing 210023, China
| | - Jing Lu
- State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University , Beijing 100871, China
| | - Li Yang
- Department of Physics and Institute of Materials Science and Engineering, Washington University in St. Louis , St. Louis, Missouri 63130, United States
| | - Wei Chen
- National University of Singapore (Suzhou) Research Institute , 377 Lin Quan Street, Suzhou, Jiang Su 215123, China
- Department of Physics, National University of Singapore , 117542 Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , 6 Science Drive 2, Singapore 117546
- Department of Chemistry, National University of Singapore , Singapore 117543
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