Synthesis of In-Plane Artificial Lattices of Monolayer Multijunctions

Recent Advances in Engineering of 2D Layered Metal Chalcogenides for Resistive-Type Gas Sensor

2D nanomaterials have triggered widespread attention in sensing applications. Especially for 2D layered metal chalcogenides (LMCs), the unique semiconducting properties and high surface area endow them with great potential for gas sensors. The assembly of 2D LMCs with guest species is an effective functionalization method to produce the synergistic effects of hybridization for greatly enhancing the gas-sensing properties. This review starts with the synthetic techniques, sensing properties, and principles, and then comprehensively compiles the advanced achievements of the pristine 2D LMCs gas sensors. Key advances in the development of the functionalization of 2D LMCs for enhancing gas-sensing properties are categorized according to the spatial architectures. It is systematically discussed in three aspects: surface, lattice, and interlayer, to comprehend the benefits of the functionalized 2D LMCs from surface chemical effect, electronic properties, and structure features. The challenges and outlooks for developing high-performance 2D LMCs-based gas sensors are also proposed.

Hierarchical-Structured Fe2O3 Anode with Exposed (001) Facet for Enhanced Lithium Storage Performance

The hierarchical structure is an ideal nanostructure for conversion-type anodes with drastic volume expansion. Here, we demonstrate a tin-doping strategy for constructing Fe₂O₃ brushes, in which nanowires with exposed (001) facets are stacked into the hierarchical structure. Thanks to the tin-doping, the conductivity of the Sn-doped Fe₂O₃ has been improved greatly. Moreover, the volume changes of the Sn-doped Fe₂O₃ anodes can be limited to ~4% vertical expansion and ~13% horizontal expansion, thus resulting in high-rate performance and long-life stability due to the exposed (001) facet and the unique hierarchical structure. As a result, it delivers a high reversible lithium storage capacity of 580 mAh/g at a current density of 0.2C (0.2 A/g), and excellent rate performance of above 400 mAh/g even at a high current density of 2C (2 A/g) over 500 cycles, which is much higher than most of the reported transition metal oxide anodes. This doping strategy and the unique hierarchical structures bring inspiration for nanostructure design of functional materials in energy storage.

Thickness Mapping and Layer Number Identification of Exfoliated van der Waals Materials by Fourier Imaging Micro-Ellipsometry

As performance of van der Waals heterostructure devices is governed by the nanoscale thicknesses and homogeneity of their constituent mono- to few-layer flakes, accurate mapping of these properties with high lateral resolution becomes imperative. Spectroscopic ellipsometry is a promising optical technique for such atomically thin-film characterization due to its simplicity, noninvasive nature and high accuracy. However, the effective use of standard ellipsometry methods on exfoliated micron-scale flakes is inhibited by their tens-of-microns lateral resolution or slow data acquisition. In this work, we demonstrate a Fourier imaging spectroscopic micro-ellipsometry method with sub-5 μm lateral resolution and three orders-of-magnitude faster data acquisition than similar-resolution ellipsometers. Simultaneous recording of spectroscopic ellipsometry information at multiple angles results in a highly sensitive system, which is used for performing angstrom-level accurate and consistent thickness mapping on exfoliated mono-, bi- and trilayers of graphene, hexagonal boron nitride (hBN) and transition metal dichalcogenide (MoS₂, WS₂, MoSe₂, WSe₂) flakes. The system can successfully identify highly transparent monolayer hBN, a challenging proposition for other characterization tools. The optical microscope integrated ellipsometer can also map minute thickness variations over a micron-scale flake, revealing its lateral inhomogeneity. The prospect of adding standard optical elements to augment generic optical imaging and spectroscopy setups with accurate in situ ellipsometric mapping capability presents potential opportunities for investigation of exfoliated 2D materials.

Passivated Interfacial Traps of Monolayer MoS2 with Bipolar Electrical Pulse

Heterogeneous integration of monolayers is an emergent route of spatially combining materials with available platforms for unprecedented properties. A long-standing challenge along this route is to manipulate interfacial configurations of each unit in stacking architecture. A monolayer of transition metal dichalcogenides (TMDs) offers an embodiment of studying interface engineering of integrated systems because optoelectronic performances generally trade off with each other due to interfacial trap states. While ultrahigh photoresponsivity of TMDs phototransistors has been realized, a long response time commonly appears and hinders applications. Here, fundamental processes in excitation and relaxation of the photoresponse are studied and correlated with interfacial traps of the monolayer MoS₂. A mechanism for the onset of saturation photocurrent and the reset behavior in the monolayer photodetector is illustrated based on device performances. Electrostatic passivation of interfacial traps is achieved with the bipolar gate pulse and significantly reduces the response time for photocurrent to reach saturated states. This work paves the way toward fast-speed and ultrahigh-gain devices of stacked two-dimensional monolayers.

Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications

Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.

Interface Influence on the Photoelectric Performance of Transition Metal Dichalcogenide Lateral Heterojunctions

The ultrathin feature of two-dimensional (2D) transition metal dichalcogenides (TMDs) has brought special performance in electronic and optoelectronic fields. When vertical and lateral heterojunctions are made using different TMD combinations, the original properties of premier TMDs can be optimized. Especially for lateral heterojunctions, their sharp interface signifies a narrow space charge region, leading to a strong in-plane built-in electric field, which may contribute to high separation efficiency of photogenerated carriers, good rectification behavior, self-powered photoelectric device construction, etc. However, due to the poor controllability over the synthesis process, obtaining a clean and sharp interface of the lateral heterojunction is still a challenge. Herein, we propose a simple chemical vapor deposition (CVD) method, which can effectively separate the growth process of different TMDs, thus resulting in good regulation of the composition change at the junction region. By this method, MoS₂-WS₂ lateral heterojunctions with sharp interfaces have been obtained with good rectification characteristics, ∼10⁵ on/off ratio, 1874% external quantum efficiency, and ∼120 ms photoresponse speed, exhibiting a better photoelectric performance than that of the lateral ones with graded junctions.

Near-field spectroscopic imaging of exciton quenching at atomically sharp MoS2/WS2 lateral heterojunctions

Heterojunctions made by laterally stitching two different transition metal dichalcogenide monolayers create a unique one-dimensional boundary with intriguing local optical properties that can only be characterized by nanoscale-spatial-resolution spectral tools. Here, we use near-field photoluminescence (NF-PL) to reveal the narrowest region (105 nm) ever reported of photoluminescence quenching at the junction of a laterally stitched WS₂/MoS₂ monolayer. We attribute this quenching to the atomically sharp band offset that generates a strong electric force at the junction to easily dissociate excitons. Besides the sharp heterojunction, a model considering various widths of the alloying interfacial region under low or high optical pumping is presented. With a spatial resolution six times better than that of confocal microscopy, NF-PL provides an unprecedented spectral tool for non-scalable 1D lateral heterojunctions.

Moiré superlattices and related moiré excitons in twisted van der Waals heterostructures

Recent advances in moiré superlattices and moiré excitons, such as quantum emission arrays, low-energy flat bands, and Mott insulators, have rapidly attracted attention in the fields of optoelectronics, materials, and energy research. The interlayer twist turns into a degree of freedom that alters the properties of the systems of materials, and the realization of moiré excitons also offers the feasibility of making artificial exciton crystals. Moreover, moiré excitons exhibit many exciting properties under the regulation of various external conditions, including spatial polarisation, alternating dipolar to alternating dipolar moments and gate-dependence to gate voltage dependence; all are pertinent to their applications in nano-photonics and quantum information. But the lag in theoretical development and the low-efficiency of processing technologies significantly limit the potential of moiré superlattice applications. In this review, we systematically summarise and discuss the recent progress in moiré superlattices and moiré excitons, and analyze the current challenges, and put forward relevant recommendations. There is no doubt that further research will lead to breakthroughs in their application and promote reforms and innovations in traditional solid-state physics and materials science.

Selective Solid-Liquid Interface Sulfidation Growth of Hierarchical Copper Sulfide and Its Hybrid Nanoflakes for Superior Lithium-Ion Storage

Two-dimensional metal sulfides and their hybrids are emerging as promising candidates in various areas. Yet, it remains challenging to synthesize high-quality 2D metal sulfides and their hybrids, especially iso-component hybrids, in a simple and controllable way. In this work, a low-temperature selective solid-liquid sulfidation growth method has been developed for the synthesis of CuS nanoflakes and their hybrids. CuS nanoflakes of about 20 nm thickness and co-component hybrids CuO_x /CuS with variable composition ratios derived from different sulfidation time are obtained after the residual sulfur removal. Besides, benefiting from the mild low-temperature sulfidation conditions, selective sulfidation is realized between Cu and Fe to yield iso-component FeO_x /CuS 2D nanoflakes of about 10-20 nm thickness, whose composition ratio is readily tunable by controlling the precursor. The as-synthesized FeO_x /CuS nanoflakes demonstrate superior lithium storage performance (i. e., 707 mAh g^-1 at 500 mA g^-1 and 627 mAh g^-1 at 1000 mA g^-1 after 450 cycles) when tested as anode materials in LIBs owing to the advantages of the ultrathin 2D nanostructure as well as the lithiation volumetric strain self-reconstruction effect of the co-existing two phases during charging/discharging processes.

Selective Growth of WSe2 with Graphene Contacts

Nanoelectronics of two-dimensional (2D) materials and related applications are hindered with critical contact issues with the semiconducting monolayers. To solve these issues, a fundamental challenge is selective and controllable fabrication of p-type or ambipolar transistors with a low Schottky barrier. Most p-type transistors are demonstrated with tungsten selenides (WSe₂) but a high growth temperature is required. Here, we utilize seeding promoter and low pressure CVD process to enhance sequential WSe₂ growth with a reduced growth temperature of 800 °C for reduced compositional fluctuations and high hetero-interface quality. Growth behavior of the sequential WSe₂ growth at the edge of patterned graphene is discussed. With optimized growth conditions, high-quality interface of the laterally stitched WSe₂-graphene is achieved and characterized with transmission electron microscopy (TEM). Device fabrication and electronic performances of the laterally stitched WSe₂-graphene are presented.

Tunable Moiré Superlattice of Artificially Twisted Monolayers

Twisting between two stacked monolayers modulates periodic potentials and forms the Moiré electronic superlattices, which offers an additional degree of freedom to alter material property. Considerable unique observations, including unconventional superconductivity, coupled spin-valley states, and quantized interlayer excitons are correlated to the electronic superlattices but further study requires reliable routes to study the Moiré in real space. Scanning tunneling microscopy (STM) is ideal to precisely probe the Moiré superlattice and correlate coupled parameters among local electronic structures, strains, defects, and band alignment at atomic scale. Here, a clean route is developed to construct twisted lattices using synthesized monolayers for fundamental studies. Diverse Moiré superlattices are predicted and successfully observed with STM at room temperature. Electrical tuning of the Moiré superlattice is achieved with stacked TMD on graphite.

Energy-Resolved Photoconductivity Mapping in a Monolayer-Bilayer WSe2 Lateral Heterostructure

Vertical and lateral heterostructures of van der Waals materials provide tremendous flexibility for band-structure engineering. Because electronic bands are sensitively affected by defects, strain, and interlayer coupling, the edge and heterojunction of these two-dimensional (2D) systems may exhibit novel physical properties, which can be fully revealed only by spatially resolved probes. Here, we report the spatial mapping of photoconductivity in a monolayer-bilayer WSe₂ lateral heterostructure under multiple excitation lasers. As the photon energy increases, the light-induced conductivity detected by microwave impedance microscopy first appears along the heterointerface and bilayer edge, then along the monolayer edge, inside the bilayer area, and finally in the interior of the monolayer region. The sequential emergence of mobile carriers in different sections of the sample is consistent with the theoretical calculation of local energy gaps. Quantitative analysis of the microscopy and transport data also reveals the linear dependence of photoconductivity on the laser intensity and the influence of interlayer coupling on carrier recombination. Combining theoretical modeling, atomic-scale imaging, mesoscale impedance microscopy, and device-level characterization, our work suggests an exciting perspective for controlling the intrinsic band gap variation in 2D heterostructures down to a regime of a few nanometers.

Coherent control of thermal phonon transport in van der Waals superlattices

van der Waals (vdW) heterostructures are a central focus of materials science and condensed matter physics due to the novel physical phenomena and properties obtained by precisely stacking heterogeneous atomically thin layers. vdW heterostructures are expected to allow for the coherent manipulation of THz lattice vibrations and hence heat conduction due to the ability to precisely control chemical composition at the atomic scale, but little work has focused on thermal transport in these materials. Here, we report an ab initio study of thermal transport in vdW superlattices consisting of alternating transition metal dichalcogenide atomic layers. Our calculations show that the lattice vibrational spectrum and scattering rates can be precisely manipulated by the choice of each atomically thin layer, resulting in materials with novel properties such as large thermal anisotropies approaching 200 and ultralow cross-plane thermal conductivities comparable to those of amorphous materials. Our work demonstrates how coherent manipulation of phonons in vdW superlattices can expand the property space beyond that occupied by natural materials and suggests an experimental route to realize these properties.