Phase Transition and Superconductivity Enhancement in Se-Substituted MoTe2 Thin Films

Large-Area Epitaxial Growth of Transition Metal Dichalcogenides

Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.

Phase transition in WSe2-xTex monolayers driven by charge injection and pressure: a first-principles study

Alloying strategies permit new probes for governing structural stability and semiconductor-semimetal phase transition of transition metal dichalcogenides (TMDs). However, the possible structure and phase transition mechanism of the alloy TMDs, and the effect of an external field, have been still unclear. Here, the enrichment of the Te content in WSe2-xTex monolayers allows for coherent structural transition from the H phase to the T' phase. The crystal orbital Hamiltonian population (COHP) uncovers that the bonding state of the H phase approaches the high-energy domain near the Fermi level as the Te concentration increases, posing a source of structural instability followed by a weakened energy barrier for the phase transition. In addition, the structural phase transition driven by charge injection opens up new possibilities for the development of phase-change devices based on atomic thin films. For WSe2-xTex monolayers with the H phase as the stable phase, the critical value of electron concentration triggering the phase transition decreases with an increase in the x value. Furthermore, the energy barrier from the H phase to the T' phase can be effectively reduced by applying tensile strain, which could favor the phase switching in electronic devices. This work provides a critical reference for controllable modulation of phase-sensitive devices from alloy materials with rich phase characteristics.

Promoted Electronic Coupling of Acoustic Phonon Modes in Doped Semimetallic MoTe2

As a prototype of the Weyl superconductor, layered molybdenum ditelluride (MoTe2) encompasses two semimetallic phases (1T' and Td) which differentiate from each other via a slight tilting of the out-of-plane lattice. Both phases are subjected to serious phase mixing, which complicates the analysis of its origin of superconductivity. Herein, we explore the electron-phonon coupling (EPC) of the monolayer semimetallic MoTe2, without phase ambiguity under this thickness limit. Apart from the hardening or softening of the phonon modes, the strength of the EPC can be strongly modulated by doping. Specifically, longitudinal and out-of-plane acoustic modes are significantly activated for electron doped MoTe2. This is ascribed to the presence of rich valley states and equispaced nesting bands, which are dynamically populated under charge doping. Through comparing the monolayer and bilayer MoTe2, the strength of EPC is found to be less likely to depend on thickness for neutral samples but clearly promoted for thinner samples with electron doping, while for hole doping, the strength alters more significantly with the thickness than doping. Our work explains the issue of the doping sensitivity of the superconductivity in semimetallic MoTe2 and establishes the critical role of activating acoustic phonons in such low-dimensional materials.

Enhanced Superconductivity and Upper Critical Field in Ta-Doped Weyl Semimetal Td -MoTe2

2D transition metal dichalcogenides are promising platforms for next-generation electronics and spintronics. The layered Weyl semimetal (W,Mo)Te₂ series features structural phase transition, nonsaturated magnetoresistance, superconductivity, and exotic topological physics. However, the superconducting critical temperature of the bulk (W,Mo)Te₂ remains ultralow without applying a high pressure. Here, the significantly enhanced superconductivity is observed with a transition temperature as large as about 7.5 K in bulk Mo_{1- x} Ta_x Te₂ single crystals upon Ta doping (0 ≤ x ≤ 0.22), which is attributed to an enrichment of density of states at the Fermi level. In addition, an enhanced perpendicular upper critical field of 14.5 T exceeding the Pauli limit is also observed in T_d -phase Mo_{1- x} Ta_x Te₂ (x = 0.08), indicating the possible emergence of unconventional mixed singlet-triplet superconductivity owing to the inversion symmetry breaking. This work provides a new pathway for exploring the exotic superconductivity and topological physics in transition metal dichalcogenides.

Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications

Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.

Electron-Extraction Engineering Induced 1T''-1T' Phase Transition of Re0.75 V0.25 Se2 for Ultrafast Sodium Ion Storage

Inducing new phases of transition metal dichalcogenides by controlling the d-electron-count has attracted much interest due to their novel structures and physicochemical properties. 1T'' ReSe₂ is a promising candidate for sodium storage, but the low electronic conductivity and limited active sites hinder its electrochemical capacity. Herein, new-phase 1T' Re_0.75 V_0.25 Se₂ crystals (P2/m) with zig-zag chains are successfully synthesized. The 1T''-1T' phase transition results from the electronic reorganization of 5d orbitals via electron extraction after V-atom doping. The electrical conductivity of 1T' Re_0.75 V_0.25 Se₂ is 2.7 × 10⁵ times higher than that of 1T'' ReSe₂ . Moreover, density functional theory (DFT) calculations reveal that 1T' Re_0.75 V_0.25 Se₂ has a larger interlayer spacing, lower bonding energy, and migration energy barrier for Na⁺ ions than 1T'' ReSe₂ . As a result, 1T' Re_0.75 V_0.25 Se₂ electrode shows an excellent rate capability of 203 mAh g^-1 at 50 C with no capacity fading over 5000 cycles for sodium storage, which is superior to most reported sodium-ion anode materials. This 1T' Re_0.75 V_0.25 Se₂ provides a new platform for various applications such as electronics, catalysis, and energy storage.

Phase transitions and suppression of magnetoresistance in WTe2-xSexsystem

X-ray diffraction, Raman spectroscopy, and electrical resistivity measurements on polycrystalline WTe2-xSe_x(0 ⩽ x ⩽ 0.8) reveal aT_d-1T'structural phase transition and suppression of magnetoresistance atx = 0.2. These phenomena are consistent with the pressure phase diagram of WTe₂. However, chemical pressure due to substitution of smaller Se ion cannot generate pressure required for the phase transition. Strain induced by sample inhomogeneity is believed to be a trigger to the behaviors. In agreement with previous predictions and reports, a mixed phase of1T'and 2Hstructures was also detected in Se-rich samples. Coincidentally atx = 0.2, electrical resistivity analysis suggests a phase transition from a metallic phase to a nonmetallic phase that is possibly a topological-insulating phase.

Nontrivial Doping Evolution of Electronic Properties in Ising-Superconducting Alloys

Transition metal dichalcogenides offer unprecedented versatility to engineer 2D materials with tailored properties to explore novel structural and electronic phase transitions. In this work, the atomic-scale evolution of the electronic ground state of a monolayer of Nb_{1- δ} Mo_δ Se₂ across the entire alloy composition range (0 < δ < 1) is investigated using low-temperature (300 mK) scanning tunneling microscopy and spectroscopy (STM/STS). In particular, the atomic and electronic structure of this 2D alloy throughout the metal to semiconductor transition (monolayer NbSe₂ to MoSe₂ ) is studied. The measurements enable extraction of the effective doping of Mo atoms, the bandgap evolution and the band shifts, which are monotonic with δ. Furthermore, it is demonstrated that collective electronic phases (charge density wave and superconductivity) are remarkably robust against disorder and further shown that the superconducting T_C changes non-monotonically with doping. This contrasting behavior in the normal and superconducting state is explained using first-principles calculations. Mo doping is shown to decrease the density of states at the Fermi level and the magnitude of pair-breaking spin fluctuations as a function of Mo content. These results paint a detailed picture of the electronic structure evolution in 2D TMD alloys, which is of utmost relevance for future 2D materials design.

Atomistic Observation of the Local Phase Transition in MoTe2 for Application in Homojunction Photodetectors

Direct atomic-scale observation of the local phase transition in transition metal dichalcogenides (TMDCs) is critically required to carry out in-depth studies of their atomic structures and electronic features. However, the structural aspects including crystal symmetries tend to be unclear and unintuitive in real-time monitoring of the phase transition process. Herein, by using in situ transmission electron microscopy, information about the phase transition mechanism of MoTe₂ from hexagonal structure (2H phase) to monoclinic structure (1T' phase) driven by sublimation of Te atoms after a spike annealing is obtained directly. Furthermore, with the control of Te atom sublimation by modulating the hexagonal boron nitride (h-BN) coverage in the desired area, the lateral 1T'-enriched MoTe₂ /2H MoTe₂ homojunction can be one-step constructed via an annealing treatment. Owing to the gradient bandgap provided by 1T'-enriched MoTe₂ and 2H MoTe₂ , the photodetector composed of the 1T'-enriched MoTe₂ /2H MoTe₂ homojunction shows fast photoresponse and ten times larger photocurrents than that consisting of a pure 2H MoTe₂ channel. The study reveals a route to improve the performance of optoelectronic and electronic devices based on TMDCs with both semiconducting and semimetallic phases.

Polytypic Phase Transition of Nb1-xVxSe2 via Colloidal Synthesis and Their Catalytic Activity toward Hydrogen Evolution Reaction

Polytypes of two-dimensional transition metal dichalcogenide can extend the architecture and application of nanostructures. Herein, Nb_1-xV_xSe₂ alloy nanosheets in the full composition range (x) were synthesized by a colloidal reaction. At x = 0.1-0.3, a phase transition occurred from various hexagonal (three 2H and one 4H types) phase NbSe₂ to an atomically homogeneous 1T phase VSe₂. Density functional theory calculations also revealed a polytypic phase transition at x = 0.3, which was shifted close to 0 in the presence of Se vacancies. Furthermore, the calculations validate favorable formation of Se vacancies at the phase transition. The sample at x = 0.3 exhibited enhanced electrocatalytic activity toward the hydrogen evolution reaction (HER) in 0.5 M H₂SO₄. The Gibbs free energy indicates that the catalytic HER performance is correlated with the active Se vacancy sites of polytypic structures.

Persistence of Monoclinic Crystal Structure in 3D Second-Order Topological Insulator Candidate 1T'-MoTe2 Thin Flake Without Structural Phase Transition

A van der Waals material, MoTe2 with a monoclinic 1T' crystal structure is a candidate for 3D second-order topological insulators (SOTIs) hosting gapless hinge states and insulating surface states. However, due to the temperature-induced structural phase transition, the monoclinic 1T' structure of MoTe2 is transformed into the orthorhombic Td structure as the temperature is lowered, which hinders the experimental verification and electronic applications of the predicted SOTI state at low temperatures. Here, systematic Raman spectroscopy studies of the exfoliated MoTe2 thin flakes with variable thicknesses at different temperatures, are presented. As a spectroscopic signature of the orthorhombic Td structure of MoTe2 , the out-of-plane vibration mode D at ≈ 125 cm-1 is always visible below a certain temperature in the multilayer flakes thicker than ≈ 27.7 nm, but vanishes in the temperature range from 80 to 320 K when the flake thickness becomes lower than ≈ 19.5 nm. The absence of the out-of-plane vibration mode D in the Raman spectra here demonstrates not only the disappearance of the monoclinic-to-orthorhombic phase transition but also the persistence of the monoclinic 1T' structure in the MoTe2 thin flakes thinner than ≈ 19.5 nm at low temperatures down to 80 K, which may be caused by the high enough density of the holes introduced during the gold-enhanced exfoliation process and exposure to air. The MoTe2 thin flakes with the low-temperature monoclinic 1T' structure provide a material platform for realizing SOTI states in van der Waals materials at low temperatures, which paves the way for developing a new generation of electronic devices based on SOTIs.

Phase-Transition Mo1-xVxSe2 Alloy Nanosheets with Rich V-Se Vacancies and Their Enhanced Catalytic Performance of Hydrogen Evolution Reaction

Alloys of transition-metal dichalcogenide can display distinctive phase evolution because of their two-dimensional structures. Herein, we report the colloidal synthesis of Mo_1-xV_xSe₂ alloy nanosheets with full composition tuning. Alloying led to a phase transition at x = 0.7 from the semiconducting 2H phase MoSe₂ to the metallic 1T phase VSe₂. It also produced significant V and Se vacancies, which became the richest in the 2H phase at x = 0.3-0.5. Extensive spin-polarized density functional theory calculations consistently predicted the 2H-1T phase transition at x = 0.7, in agreement with the experimental results. The vacancy formation energy also supports the formation of V and Se vacancies. Alloying in the 2H phase enhanced the electrocatalytic performance toward hydrogen evolution reaction (HER) at x = 0.3 (in 0.5 M H₂SO₄) or 0.4 (in 1 M KOH). The Gibbs free energy along the HER pathway indicates that this maximum performance is due to the highest concentration of active V and Se vacancy sites.

Phase-Selective Synthesis of Ultrathin FeTe Nanoplates by Controllable Fe/Te Atom Ratio in the Growth Atmosphere

Phase controllable synthesis of 2D materials is of significance for tuning related electrical, optical, and magnetic properties. Herein, the phase-controllable synthesis of tetragonal and hexagonal FeTe nanoplates has been realized by a rational control of the Fe/Te ratio in a chemical vapor deposition system. Using density functional theory calculations, it has been revealed that with the change of the Fe/Te ratio, the formation energy of active clusters changes, causing the phase-controllable synthesis of FeTe nanoplates. The thickness of the obtained FeTe nanoplates can be tuned down to the 2D limit (2.8 nm for tetragonal and 1.4 nm for hexagonal FeTe). X-ray diffraction pattern, transmission electron microscopy, and high resolution scanning transmission electron microscope analyses exhibit the high crystallinity of the as-grown FeTe nanoplates. The two kinds of FeTe nanoflakes show metallic behavior and good electrical conductivity, featuring 8.44 × 10⁴ S m^-1 for 9.8 nm-thick tetragonal FeTe and 5.45 × 10⁴ S m^-1 for 7.6 nm-thick hexagonal FeTe. The study provides an efficient and convenient route for tailoring the phases of FeTe nanoplates, which benefits to study phase-sensitive properties, and may pave the way for the synthesis of other multiphase 2D nanosheets with controllable phases.

Recent Advances in 2D Superconductors

The emergence of superconductivity in 2D materials has attracted much attention and there has been rapid development in recent years because of their fruitful physical properties, such as high transition temperature (T_c ), continuous phase transition, and enhanced parallel critical magnetic field (B_c ). Tremendous efforts have been devoted to exploring different physical parameters to figure out the mechanisms behind the unexpected superconductivity phenomena, including adjusting the thickness of samples, fabricating various heterostructures, tuning the carrier density by electric field and chemical doping, and so on. Here, different types of 2D superconductivity with their unique characteristics are introduced, including the conventional Bardeen-Cooper-Schrieffer superconductivity in ultrathin films, high-T_c superconductivity in Fe-based and Cu-based 2D superconductors, unconventional superconductivity in newly discovered twist-angle bilayer graphene, superconductivity with enhanced B_c , and topological superconductivity. A perspective toward this field is then proposed based on academic knowledge from the recently reported literature. The aim is to provide researchers with a clear and comprehensive understanding about the newly developed 2D superconductivity and promote the development of this field much further.

Roles of salts in the chemical vapor deposition synthesis of two-dimensional transition metal chalcogenides

Chemical vapor deposition (CVD) route has emerged as an effective method for the successful synthesis of two-dimensional (2D) materials with satisfactory crystal quality, especially for the synthesis of wafer-scale, uniform thickness or large domain size single-crystal transition metal chalcogenides (TMCs). To achieve this, the salt-assisted CVD strategy has been proved to be powerful to reduce the high melting point of the metal related precursor, decrease the nucleation density and increase the reaction rate on the solid template. However, the specific roles of alkali metals and halide components still remain unclear. Herein, the functions of salts in the growth of TMCs have been discussed by summarizing some recent achievements in salt-assisted synthesis results, wherein salts are mainly introduced as additives in metal precursors to achieve the wafer-scale uniform growth of monolayer and thickness-tunable multi-layered TMCs, and for serving as 3D templates (especially NaCl) to realize the scalable production of TMCs. Moreover, the existing challenges and viable future directions are also proposed for in-depth understanding of salt-assisted C4VD methods and for exploring more efficient CVD strategies.