Tailoring of Typical Color Centers in Diamond for Photonics

Picometer-Scale Atomic Shifts Governing Subdisordered Structures in Diamond

Diamond is considered the most promising next-generation semiconductor material due to its excellent physical characteristics. It has been more than three decades since the discovery of a special structure named n-diamond. However, despite extensive efforts, its crystallographic structure and properties are still unclear. Here, we show that subdisordered structures in diamond provide an explanation for the structural feature of n-diamond. Monocrystalline diamond with subdisordered structures is synthesized via the chemical vapor deposition method. Atomic-resolution scanning transmission electron microscopy characterizations combined with the picometer-precision peak finder technology and diffraction simulations reveal that picometer-scale shifts of atoms within cells of diamond govern the subdisordered structures. First-principles calculations indicate that the bandgap of diamond decreases rapidly with increasing shifting distance, in accordance with experimental results. These findings clarify the crystallographic structure and electronic properties of n-diamond and provide new insights into the bandgap adjustment in diamond.

Interface Modulation for the Heterointegration of Diamond on Si

Along with the increasing integration density and decreased feature size of current semiconductor technology, heterointegration of the Si-based devices with diamond has acted as a promising strategy to relieve the existing heat dissipation problem. As one of the heterointegration methods, the microwave plasma chemical vapor deposition (MPCVD) method is utilized to synthesize large-scale diamond films on a Si substrate, while distinct structures appear at the Si-diamond interface. Investigation of the formation mechanisms and modulation strategies of the interface is crucial to optimize the heat dissipation behaviors. By taking advantage of electron microscopy, the formation of the epitaxial β-SiC interlayer is found to be caused by the interaction between the anisotropically sputtered Si and the deposited amorphous carbon. Compared with the randomly oriented β-SiC interlayer, larger diamond grain sizes can be obtained on the epitaxial β-SiC interlayer under the same synthesis condition. Moreover, due to the competitive interfacial reactions, the epitaxial β-SiC interlayer thickness can be reduced by increasing the CH4 /H2 ratio (from 3% to 10%), while further increase in the ratio (to 20%) can lead to the broken of the epitaxial relationship. The above findings are expected to provide interfacial design strategies for multiple large-scale diamond applications.

SiV0 centres in diamond: effect of isotopic substitution in carbon and silicon

The neutrally charged silicon-vacancy defect (SiV0) is a colour centre in diamond with spin S = 1, a zero-phonon line (ZPL) at 946 nm and long spin coherence, which makes it a promising candidate for quantum network applications. For the proper performance of such colour centres, all of them must have identical optical characteristics. However, in practice, there are factors that influence each individual centre. One of these factors is non-uniform isotope composition for both carbon atoms in diamond lattice and silicon atoms of dopant. In this work, we studied the isotopic shifts of SiV0 centres for CVD-grown epitaxial layers of isotopically enriched 12C and 13C diamonds, as well as for diamond with natural isotope composition but doped only with one isotope of Si (28Si, 29Si and 30Si). The detected shift was 1.60 meV for 12C/13C couple and 0.33 meV for 28Si/29Si and 29Si/30Si couples, which are close to the previously obtained values of the isotopic shift for the negatively charged silicon vacancy (SiV-), which indicates a similar model of interaction with the environment for these two charge states of the SiV colour centres. This article is part of the Theo Murphy meeting issue 'Diamond for quantum applications'.

In situ doping of epitaxial diamond with germanium by microwave plasma CVD in GeH4-CH4-H2 mixtures with optical emission spectroscopy monitoring

We report the growth of Ge-doped homoepitaxial diamond films by microwave plasma CVD in GeH4-CH4-H2 gas mixtures at moderate pressures (70-100 Torr). Optical emission spectroscopy was used to monitor Ge, H, and C2 species in the plasma at different process parameters, and trends for intensities of those radicals, gas temperature, and excitation temperature, with variations of GeH4 or CH4 precursor concentrations, were investigated. The film deposited on (111)-oriented single crystal diamond substrates in a high growth rate regime revealed a strong emission of a germanium-vacancy (GeV) color center with a zero-phonon line at ≈604 nm wavelength in photoluminescence (PL) spectra, confirming the successful doping. The observed PL shift for the GeV defect is caused by stress in the films, as evidenced and quantified by Raman spectra. These results suggest that in situ doping with Ge using a GeH4 precursor is a convenient method of controlling the formation of GeV centers in epitaxial diamond films for photonic applications.

Frenkel-Poole Mechanism Unveils Black Diamond as Quasi-Epsilon-Near-Zero Surface

A recent innovation in diamond technology has been the development of the "black diamond" (BD), a material with very high optical absorption generated by processing the diamond surface with a femtosecond laser. In this work, we investigate the optical behavior of the BD samples to prove a near to zero dielectric permittivity in the high electric field condition, where the Frenkel-Poole (FP) effect takes place. Zero-epsilon materials (ENZ), which represent a singularity in optical materials, are expected to lead to remarkable developments in the fields of integrated photonic devices and optical interconnections. Such a result opens the route to the development of BD-based, novel, functional photonic devices.

Relaxometry with Nitrogen Vacancy (NV) Centers in Diamond

Relaxometry is a technique which makes use of a specific crystal lattice defect in diamond, the so-called NV center. This defect consists of a nitrogen atom, which replaces a carbon atom in the diamond lattice, and an adjacent vacancy. NV centers allow converting magnetic noise into optical signals, which dramatically increases the sensitivity of the readout, allowing for nanoscale resolution. Analogously to T1 measurements in conventional magnetic resonance imaging (MRI), relaxometry allows the detection of different concentrations of paramagnetic species. However, since relaxometry allows very local measurements, the detected signals are from nanoscale voxels around the NV centers. As a result, it is possible to achieve subcellular resolutions and organelle specific measurements.A relaxometry experiment starts with polarizing the spins of NV centers in the diamond lattice, using a strong laser pulse. Afterward the laser is switched off and the NV centers are allowed to stochastically decay into the equilibrium mix of different magnetic states. The polarized configuration exhibits stronger fluorescence than the equilibrium state, allowing one to optically monitor this transition and determine its rate. This process happens faster at higher levels of magnetic noise. Alternatively, it is possible to conduct T1 relaxation measurements from the dark to the bright equilibrium by applying a microwave pulse which brings NV centers into the -1 state instead of the 0 state. One can record a spectrum of T1 at varying strengths of the applied magnetic field. This technique is called cross-relaxometry. Apart from detecting magnetic signals, responsive coatings can be applied which render T1 sensitive to other parameters as pH, temperature, or electric field. Depending on the application there are three different ways to conduct relaxometry experiments: relaxometry in moving or stationary nanodiamonds, scanning magnetometry, and relaxometry in a stationary bulk diamond with a stationary sample on top.In this Account, we present examples for various relaxometry modes as well as their advantages and limitations. Due to the simplicity and low cost of the approach, relaxometry has been implemented in many different instruments and for a wide range of applications. Herein we review the progress that has been achieved in physics, chemistry, and biology. Many articles in this field have a proof-of-principle character, and the full potential of the technology still waits to be unfolded. With this Account, we would like to stimulate discourse on the future of relaxometry.

Boron-nitrogen co-terminated diamond (110) surface for nitrogen-vacancy quantum sensors from first-principles calculations

The nitrogen-vacancy (NV) center in diamond surface is a critical issue in quantum sensors with no sensitivity to surface terminators. We investigate the structural stabilities and electronic properties of boron (B)-N co-terminated diamond (110) surface based on first-principles calculations. The B-N co-terminated diamond (110) surfaces combined with monolayer coverage of hydrogen (H) and fluorine (F) adsorption are dynamically and thermally stable. Remarkably, the H/F mixed (H/F = 1.0) adsorption surface has neither surface spin noise nor surface-related state, and a positive electron affinity of 1.11 eV, thus it could be a prospective candidate for NV-based quantum sensors.

Ultra-bright and narrow-band emission from Ag atomic sized nanoclusters in a self-assembled plasmonic resonator

We have proposed, implemented and investigated a novel, efficient quantum emitter based on an atomic-sized Ag nanocluster in a plasmonic resonator. The quantum emitter enables the realization of: (1) ultra-bright fluorescence, (2) narrow-band emission down to 4 nm, (3) ultra-short fluorescence lifetime. The fluorescence cross-section of a quantum emitter is on the order of σ ∼ 10^-14 cm², which is comparable to the largest fluorescence cross-sections of dye molecules and quantum dots, and enables a light source with a record high intensity known only for plasmon nanolasers. The results presented suggest a unique method for fabricating nanoprobes with high brightness and wavelength-tunable spectrally narrow fluorescence, which is needed for multiplex diagnostics and detection of substances at extremely low concentrations.