Cs4 PbI6 -Mediated Synthesis of Thermodynamically Stable FA0.15 Cs0.85 PbI3 Perovskite Solar Cells

Efficient and Bright Deep-Red Light-Emitting Diodes based on a Lateral 0D/3D Perovskite Heterostructure

Bright and efficient deep-red light-emitting diodes (LEDs) are important for applications in medical therapy and biological imaging due to the high penetration of deep-red photons into human tissues. Metal-halide perovskites have potential to achieve bright and efficient electroluminescence due to their favorable optoelectronic properties. However, efficient and bright perovskite-based deep-red LEDs have not been achieved yet, due to either Auger recombination in low-dimensional perovskites or trap-assisted nonradiative recombination in 3D perovskites. Here, a lateral Cs4PbI6/FAxCs1- xPbI3 (0D/3D) heterostructure that can enable efficient deep-red perovskite LEDs at very high brightness is demonstrated. The Cs4PbI6 can facilitate the growth of low-defect FAxCs1- xPbI3, and act as low-refractive-index grids, which can simultaneously reduce nonradiative recombination and enhance light extraction. This device reaches a peak external quantum efficiency of 21.0% at a photon flux of 1.75 × 1021 m-2 s-1, which is almost two orders of magnitude higher than that of reported high-efficiency deep-red perovskite LEDs. Theses LEDs are suitable for pulse oximeters, showing an error <2% of blood oxygen saturation compared with commercial oximeters.

Anti-Solvent-Free Preparation for Efficient and Photostable Pure-Iodide Wide-Bandgap Perovskite Solar Cells

The perovskite/silicon tandem solar cell (TSC) has attracted tremendous attention due to its potential to breakthrough the theoretical efficiency set for single-junction solar cells. However, the perovskite solar cell (PSC) designed as its top component cell suffers from severe photo-induced halide segregation owing to its mixed-halide strategy for achieving desirable wide-bandgap (1.68 eV). Developing pure-iodide wide-bandgap perovskites is a promising route to fabricate photostable perovskite/silicon TSCs. Here, we report efficient and photostable pure-iodide wide-bandgap PSCs made from an anti-solvent-free (ASF) technique. The ASF process is achieved by mixing two precursor solutions, both of which are capable of depositing corresponding perovskite films without involving anti-solvent. The mixed solution finally forms Cs0.3DMA0.2MA0.5PbI3 perovskite film with a bandgap of 1.68 eV. Furthermore, methylammonium chloride additive is applied to enhance the crystallinity and reduce the trap density of perovskite films. As a result, the pure-iodide wide-bandgap PSC delivers efficiency as high as 21.30 % with excellent photostability, the highest for this type of solar cells. The ASF method significantly improves the device reproducibility as compared with devices made from other anti-solvent methods. Our findings provide a novel recipe to prepare efficient and photostable wide-bandgap PSCs.

Intragrain impurity annihilation for highly efficient and stable perovskite solar cells

Intragrain impurities can impart detrimental effects on the efficiency and stability of perovskite solar cells, but they are indiscernible to conventional characterizations and thus remain unexplored. Using in situ scanning transmission electron microscopy, we reveal that intragrain impurity nano-clusters inherited from either the solution synthesis or post-synthesis storage can revert to perovskites upon irradiation stimuli, leading to the counterintuitive amendment of crystalline grains. In conjunction with computational modelling, we atomically resolve crystallographic transformation modes for the annihilation of intragrain impurity nano-clusters and probe their impacts on optoelectronic properties. Such critical fundamental findings are translated for the device advancement. Adopting a scanning laser stimulus proven to heal intragrain impurity nano-clusters, we simultaneously boost the efficiency and stability of formamidinium-cesium perovskite solar cells, by virtual of improved optoelectronic properties and relaxed intra-crystal strain, respectively. This device engineering, inspired and guided by atomic-scale in situ microscopic imaging, presents a new prototype for solar cell advancement.

Stability Strategies and Applications of Iodide Perovskites

Iodide perovskites have demonstrated their unprecedented high efficiency and commercialization potential, and their superior optoelectronic properties, such as high absorption coefficient, high carrier mobility, and narrow direct bandgap, have attracted much attention, especially in solar cells, photodetectors, and light-emitting diodes (LEDs). However, whether it is organic iodide perovskite, organic-inorganic hybrid iodide perovskite or all-inorganic iodide perovskite the stability of these iodide perovskites is still poor and the contamination is high. In recent years, scholars have studied more iodide perovskites to improve their stability as well as optoelectronic properties from various angles. This paper systematically reviews the strategies (component engineering, additive engineering, dimensionality reduction engineering, and phase mixing engineering) used to improve the stability of iodide perovskites and their applications in recent years.

Facile Dimension Transformation Strategy for Fabrication of Efficient and Stable CsPbI3 Perovskite Solar Cells

All-inorganic cesium lead triiodide (CsPbI₃) perovskite has received increasing attention due to its intrinsic thermal stability and suitable band gap for photovoltaic applications. However, it is difficult to deposit high-quality pure-phase CsPbI₃ films using CsI and PbI₂ as precursors due to the rapid nucleation and crystal growth by the solution coating method. Here, a simple cation-exchange approach is employed to fabricate all-inorganic 3D CsPbI₃ perovskite, where 1D ethylammonium lead (EAPbI₃) perovskite is first solution-deposited and then transformed to 3D CsPbI₃ via ion exchange between EA⁺ and Cs⁺ during thermal annealing. The large space between the PbI₃^- skeletons in 1D EAPbI₃ favors the cation interdiffusion and exchange for the formation of pure-phase 3D CsPbI₃ with full compactness and high crystallinity and orientation. The resulting CsPbI₃ film exhibits a low trap density of state and high charge mobility, and the perovskite solar cell shows a power-conversion efficiency of 18.2% with enhanced stability. This strategy provides an alternative and promising fabrication route for the fabrication of high-quality all-inorganic perovskite devices.

Cetrimonium bromide and potassium thiocyanate assisted post-vapor treatment approach to enhance power conversion efficiency and stability of FAPbI3 perovskite solar cells

Formamidinium lead iodide (FAPbI₃) is the most promising perovskite material for producing efficient perovskite solar cells (PSCs). Here, we develop a facile method to obtain an α-phase FAPbI₃ layer with passivated grain boundaries and weakened non-radiative recombination. For this aim, during the FAPbI₃ fabrication process, cetrimonium bromide + 5% potassium thiocyanate (CTABr + 5% KSCN) vapor post-treatment is introduced to remove non-perovskite phases in the FAPbI₃ layer. Incorporation of CTA⁺ along with SCN^- ions induces FAPbI₃ crystallization and stitch grain boundaries, resulting in PSCs with lower defect losses. The vapor-assisted deposition increases the carriers' lifetime in the FAPbI₃ and facilitates charge transport at the interfacial perovskite/hole transport layer via a band alignment phenomenon. The treated α-FAPbI₃ layers bring an excellent PCE of 22.34%, higher than the 19.48% PCE recorded for control PSCs. Besides, the well-oriented FAPbI₃ and its higher hydrophobic behavior originating from CTABr materials lead to improved stability in the treated PSCs.

Cesium acetate-assisted crystallization for high-performance inverted CsPbI3perovskite solar cells

Efficient inverted (p-i-n) type CsPbI₃perovskite solar cells (PSCs) have revealed promising applications due to their excellent thermal and photostability. Regulating the nucleation and crystallization of perovskite film is an important route to improving the performance of CsPbI₃PSCs. Herein, we explored cesium acetate (CsAc) as additive to manipulate the crystallization process of CsPbI₃perovskite films. By involving in the intermediate phase DMA_1-xCs_xPbI_3-yAc_yof perovskite, the pseudo-halide acetate (Ac^-) can retard the ion exchange reaction between DMA⁺and Cs⁺, leading to a perovskite with dense morphology, low defect density, and a long carrier lifetime. As a result, the optimal CsPbI₃PSCs yielded a high power conversion efficiency of 18.3%. Moreover, the encapsulated devices showed excellent operational stability and the devices retained their initial performance following 500 h of operation at the maximum power point under one-sun illumination in ambient conditions.

Wide-Bandgap Organic-Inorganic Lead Halide Perovskite Solar Cells

Under the groundswell of calls for the industrialization of perovskite solar cells (PSCs), wide-bandgap (>1.7 eV) mixed halide perovskites are equally or more appealing in comparison with typical bandgap perovskites when the former's various potential applications are taken into account. In this review, the progress of wide-bandgap organic-inorganic hybrid PSCs-concentrating on the compositional space, optimization strategies, and device performance-are summarized and the issues of phase segregation and voltage loss are assessed. Then, the diverse applications of wide-bandgap PSCs in semitransparent devices, indoor photovoltaics, and various multijunction tandem devices are discussed and their challenges and perspectives are evaluated. Finally, the authors conclude with an outlook for the future development of wide-bandgap PSCs.

Atomically Resolved Electrically Active Intragrain Interfaces in Perovskite Semiconductors

Deciphering the atomic and electronic structures of interfaces is key to developing state-of-the-art perovskite semiconductors. However, conventional characterization techniques have limited previous studies mainly to grain-boundary interfaces, whereas the intragrain-interface microstructures and their electronic properties have been much less revealed. Herein using scanning transmission electron microscopy, we resolved the atomic-scale structural information on three prototypical intragrain interfaces, unraveling intriguing features clearly different from those from previous observations based on standalone films or nanomaterial samples. These intragrain interfaces include composition boundaries formed by heterogeneous ion distribution, stacking faults resulted from wrongly stacked crystal planes, and symmetrical twinning boundaries. The atomic-scale imaging of these intragrain interfaces enables us to build unequivocal models for the ab initio calculation of electronic properties. Our results suggest that these structure interfaces are generally electronically benign, whereas their dynamic interaction with point defects can still evoke detrimental effects. This work paves the way toward a more complete fundamental understanding of the microscopic structure–property–performance relationship in metal halide perovskites.

Bandgap adjustment assisted preparation of >18% CsyFA1−yPbIxBr3−x-based perovskite solar cells using a hybrid spraying process

High-efficiency perovskite solar cells with good grain morphology and adjustable band gap were prepared by ultrasonic spray.