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Li H, Shangguan Z, Li T, Zhang ZY, Ji D, Hu W. Arylazopyrazole-modulated stable dual-mode phototransistors. SCIENCE ADVANCES 2024; 10:eado2329. [PMID: 38838139 DOI: 10.1126/sciadv.ado2329] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2024] [Accepted: 04/30/2024] [Indexed: 06/07/2024]
Abstract
High-performance organic devices with dynamic and stable modulation are essential for building devices adaptable to the environment. However, the existing reported devices incorporating light-activated units exhibit either limited device stability or subpar optoelectronic properties. Here, we synthesize a new optically tunable polymer dielectric functionalized with photochromic arylazopyrazole units with a cis-isomer half-life of as long as 90 days. On this basis, stable dual-mode organic transistors that can be reversibly modulated are successfully fabricated. The trans-state devices exhibit high carrier mobility reaching 7.4 square centimeters per volt per second and excellent optical figures of merit, whereas the cis-state devices demonstrate stable but starkly different optoelectronic performance. Furthermore, optical image sensors are prepared with regulatable nonvolatile memories from 36 hours (cis state) to 108 hours (trans state). The achievement of dynamic light modulation shows remarkable prospects for the intelligent application of organic optoelectronic devices.
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Affiliation(s)
- Huchao Li
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, 300072 Tianjin, China
| | - Zhichun Shangguan
- School of Chemistry and Chemical Engineering, Frontiers Science Center for Transformative Molecules, Shanghai Key Laboratory of Electrical Insulation and Thermal Aging, Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Shanghai Jiao Tong University, Shanghai 200240, China
| | - Tao Li
- School of Chemistry and Chemical Engineering, Frontiers Science Center for Transformative Molecules, Shanghai Key Laboratory of Electrical Insulation and Thermal Aging, Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Shanghai Jiao Tong University, Shanghai 200240, China
| | - Zhao-Yang Zhang
- School of Chemistry and Chemical Engineering, Frontiers Science Center for Transformative Molecules, Shanghai Key Laboratory of Electrical Insulation and Thermal Aging, Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Shanghai Jiao Tong University, Shanghai 200240, China
| | - Deyang Ji
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, 300072 Tianjin, China
- Key Laboratory of Organic Integrated Circuit, Ministry of Education, Tianjin University, 300072 Tianjin, China
| | - Wenping Hu
- Key Laboratory of Organic Integrated Circuit, Ministry of Education, Tianjin University, 300072 Tianjin, China
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, 300072 Tianjin, China
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2
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Nashashibi S, Koepfli SM, Schwanninger R, Baumann M, Doderer M, Bisang D, Fedoryshyn Y, Leuthold J. Engineering Graphene Phototransistors for High Dynamic Range Applications. ACS NANO 2024; 18:12760-12770. [PMID: 38728257 PMCID: PMC11112981 DOI: 10.1021/acsnano.3c11856] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2023] [Revised: 04/23/2024] [Accepted: 05/01/2024] [Indexed: 05/12/2024]
Abstract
Phototransistors are light-sensitive devices featuring a high dynamic range, low-light detection, and mechanisms to adapt to different ambient light conditions. These features are of interest for bioinspired applications such as artificial and restored vision. In this work, we report on a graphene-based phototransistor exploiting the photogating effect that features picowatt- to microwatt-level photodetection, a dynamic range covering six orders of magnitude from 7 to 107 lux, and a responsivity of up to 4.7 × 103 A/W. The proposed device offers the highest dynamic range and lowest optical power detected compared to the state of the art in interfacial photogating and further operates air stably. These results have been achieved by a combination of multiple developments. For example, by optimizing the geometry of our devices with respect to the graphene channel aspect ratio and by introducing a semitransparent top-gate electrode, we report a factor 20-30 improvement in responsivity over unoptimized reference devices. Furthermore, we use a built-in dynamic range compression based on a partial logarithmic optical power dependence in combination with control of responsivity. These features enable adaptation to changing lighting conditions and support high dynamic range operation, similar to what is known in human visual perception. The enhanced performance of our devices therefore holds potential for bioinspired applications, such as retinal implants.
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Affiliation(s)
- Shadi Nashashibi
- ETH Zurich, Institute of
Electromagnetic Fields, Zurich 8092, Switzerland
| | - Stefan M. Koepfli
- ETH Zurich, Institute of
Electromagnetic Fields, Zurich 8092, Switzerland
| | | | - Michael Baumann
- ETH Zurich, Institute of
Electromagnetic Fields, Zurich 8092, Switzerland
| | - Michael Doderer
- ETH Zurich, Institute of
Electromagnetic Fields, Zurich 8092, Switzerland
| | - Dominik Bisang
- ETH Zurich, Institute of
Electromagnetic Fields, Zurich 8092, Switzerland
| | - Yuriy Fedoryshyn
- ETH Zurich, Institute of
Electromagnetic Fields, Zurich 8092, Switzerland
| | - Juerg Leuthold
- ETH Zurich, Institute of
Electromagnetic Fields, Zurich 8092, Switzerland
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3
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Wang J, Han N, Lin Z, Hu S, Tian R, Zhang M, Zhang Y, Zhao J, Gan X. A giant intrinsic photovoltaic effect in atomically thin ReS 2. NANOSCALE 2024; 16:3101-3106. [PMID: 38250820 DOI: 10.1039/d3nr05355e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/23/2024]
Abstract
The photovoltaic (PV) effect in non-centrosymmetric materials consisting of a single component under homogeneous illumination can exceed the fundamental Shockley-Queisser limit compared to the traditional p-n junctions. Two-dimensional (2D) materials with a reduced dimensionality and smaller bandgap were predicated to be better candidates for the PV effect with high efficiency exceeding that of traditional ferroelectric perovskite oxides. Here, we report the giant intrinsic PV effect in atomically thin rhenium disulfide (ReS2) with centrosymmetry breaking. In graphene/ReS2/graphene sandwich structures, significant short-circuit currents (Isc) were observed with illumination over the visible spectral range, presenting the highest responsivity (110 mA W-1) and external quantum efficiency (25.7%) among those reported PV effects in 2D materials. This giant PV effect could be ascribed to the spontaneous-polarization induced depolarization field in even-number-layered ReS2 flakes benefiting from the distorted 1T lattice structure. Our results provide a new potential candidate material for the development of novel high-efficiency, miniaturized and easily integrated photodetectors and solar cells.
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Affiliation(s)
- Jing Wang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Nannan Han
- Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China.
| | - Zhihua Lin
- Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China.
| | - Siqi Hu
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Ruijuan Tian
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Mingwen Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Yu Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
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4
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Liu F, Lin X, Yan Y, Gan X, Cheng Y, Luo X. Self-Powered Programmable van der Waals Photodetectors with Nonvolatile Semifloating Gate. NANO LETTERS 2023; 23:11645-11654. [PMID: 38088857 DOI: 10.1021/acs.nanolett.3c03500] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Tunable photovoltaic photodetectors are of significant relevance in the fields of programmable and neuromorphic optoelectronics. However, their widespread adoption is hindered by intricate architectural design and energy consumption challenges. This study employs a nonvolatile MoTe2/hexagonal boron nitride/graphene semifloating photodetector to address these issues. Programed with pulsed gate voltage, the MoTe2 channel can be reconfigured from an n+-n to a p-n homojunction and the photocurrent transition changes from negative to positive values. Scanning photocurrent mapping reveals that the negative and positive photocurrents are attributed to Schottky junction and p-n homojunction, respectively. In the p-n configuration, the device demonstrates self-driven, linear, rapid response (∼3 ms), and broadband sensitivity (from 405 to 1500 nm) for photodetection, with typical performances of responsivity at ∼0.5 A/W and detectivity ∼1.6 × 1012 Jones under 635 nm illumination. These outstanding photodetection capabilities emphasize the potential of the semifloating photodetector as a pioneering approach for advancing logical and nonvolatile optoelectronics.
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Affiliation(s)
- Fan Liu
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an 710129, China
| | - Xi Lin
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an 710129, China
| | - Yuting Yan
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an 710129, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Yingchun Cheng
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Xiaoguang Luo
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an 710129, China
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5
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Jiang T, Wang Y, Zheng Y, Wang L, He X, Li L, Deng Y, Dong H, Tian H, Geng Y, Xie L, Lei Y, Ling H, Ji D, Hu W. Tetrachromatic vision-inspired neuromorphic sensors with ultraweak ultraviolet detection. Nat Commun 2023; 14:2281. [PMID: 37085540 PMCID: PMC10121588 DOI: 10.1038/s41467-023-37973-0] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2022] [Accepted: 04/05/2023] [Indexed: 04/23/2023] Open
Abstract
Sensing and recognizing invisible ultraviolet (UV) light is vital for exploiting advanced artificial visual perception system. However, due to the uncertainty of the natural environment, the UV signal is very hard to be detected and perceived. Here, inspired by the tetrachromatic visual system, we report a controllable UV-ultrasensitive neuromorphic vision sensor (NeuVS) that uses organic phototransistors (OPTs) as the working unit to integrate sensing, memory and processing functions. Benefiting from asymmetric molecular structure and unique UV absorption of the active layer, the as fabricated UV-ultrasensitive NeuVS can detect 370 nm UV-light with the illumination intensity as low as 31 nW cm-2, exhibiting one of the best optical figures of merit in UV-sensitive neuromorphic vision sensors. Furthermore, the NeuVS array exbibits good image sensing and memorization capability due to its ultrasensitive optical detection and large density of charge trapping states. In addition, the wavelength-selective response and multi-level optical memory properties are utilized to construct an artificial neural network for extract and identify the invisible UV information. The NeuVS array can perform static and dynamic image recognition from the original color image by filtering red, green and blue noise, and significantly improve the recognition accuracy from 46 to 90%.
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Affiliation(s)
- Ting Jiang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, China
| | - Yiru Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Yingshuang Zheng
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, China
| | - Le Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Xiang He
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Liqiang Li
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China
| | - Yunfeng Deng
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300072, China
| | - Huanli Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Hongkun Tian
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China.
| | - Yanhou Geng
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300072, China
| | - Linghai Xie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Yong Lei
- Fachgebiet Angewandte Nanophysik, Institut für Physik & IMN MacroNano, Technische Universität Ilmenau, Ilmenau, 98693, Germany
| | - Haifeng Ling
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China.
| | - Deyang Ji
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, China.
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China.
| | - Wenping Hu
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University. Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072, China
- Joint School of National University of Singapore and Tianjin University, Fuzhou, 350207, China
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6
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Chen X, Zhang Y, Tian R, Wu X, Luo Z, Liu Y, Wang X, Zhao J, Gan X. Van der Waals Nonlinear Photodetector with Quadratic Photoresponse. NANO LETTERS 2023; 23:1023-1029. [PMID: 36706340 DOI: 10.1021/acs.nanolett.2c04472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
With unique electronic and optical attributes and dangling-bond-free surface, two-dimensional (2D) materials have broadened the functionalities of photodetectors. Here, we report a quadratically nonlinear photodetector (QNPD) composed of a van der Waals (vdW) stacked GaSe/InSe heterostructure. Compared with the reported 2D material-based photodetectors, the extra second-harmonic generation (SHG) process in GaSe/InSe leads to the quadratically nonlinear function between photocurrent and optical intensity, extending the photodetection wavelength from 900 to 1750 nm. The QNPD is highly sensitive to the variation of optical intensity with improved spatial resolution. With the light-light interaction in SHG converted into electrical signal directly, we also demonstrate the QNPD as an autocorrelator for measuring ultrafast pulse widths and an optoelectronic mixer of two modulated pulses for signal processings. The simultaneous involvement of light-light interaction and photoelectric conversion in the vdW stacked QNPD promises its potential to simplify the optoelectronic systems.
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Affiliation(s)
- Xiaoqing Chen
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Yu Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Ruijuan Tian
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Xianghu Wu
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Zhengdong Luo
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an710071, China
| | - Yan Liu
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an710071, China
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing210093, China
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
- School of Microelectronics, Northwestern Polytechnical University, Xi'an710129, China
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7
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Tong T, Gan Y, Li W, Zhang W, Song H, Zhang H, Liao K, Deng J, Li S, Xing Z, Yu Y, Tu Y, Wang W, Chen J, Zhou J, Song X, Zhang L, Wang X, Qin S, Shi Y, Huang W, Wang L. Boosting the Sensitivity of WSe 2 Phototransistor via Janus Interfaces with 2D Perovskite and Ferroelectric Layers. ACS NANO 2023; 17:530-538. [PMID: 36547249 DOI: 10.1021/acsnano.2c09284] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Hybrid systems have recently attracted increasing attention, which combine the special attributes of each constitute and create interesting functionalities through multiple heterointerface interactions. Here, we design a two-dimensional (2D) hybrid phototransistor utilizing Janus-interface engineering, in which the WSe2 channel combines light-sensitive perovskite and spontaneously polarized ferroelectrics, achieving collective ultrasensitive detection performance. The top perovskite (BA2(MA)3Pb4I13) layer can absorb the light efficiently and provide generous photoexcited holes to WSe2. WSe2 exhibit p-type semiconducting states of different degrees due to the selective light-operated doping effect, which also enables the ultrahigh photocurrent of the device. The bottom ferroelectric (Hf0.5Zr0.5O2) layer dramatically decreases the dark current, which should be attributed to the ferroelectric polarization assisted charge trapping effect and improved gate control. As a whole, our phototransistors show excellent photoelectric performances across the ultraviolet to near-infrared range (360-1050 nm), including an ultrahigh ON/OFF current ratio > 109 and low noise-equivalent power of 1.3 fW/Hz1/2, all of which are highly competitive in 2D semiconductor-based optoelectronic devices. In particular, the devices show excellent weak light detection ability, where the distinguishable photoswitching signal is obtained even under a record-low light intensity down to 1.6 nW/cm2, while showing a high responsivity of 2.3 × 105 A/W and a specific detectivity of 4.1 × 1014 Jones. Our work demonstrates that Janus-interface design makes the upper and lower interfaces complement each other for the joint advancement into high-performance optoelectronic applications, providing a picture to realize the integrated engineering on carrier dynamics by light irradiation, electric field, interfacial trapping, and band alignment.
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Affiliation(s)
- Tong Tong
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Nanjing Tech University, Nanjing211816, China
| | - Yuquan Gan
- School of Physical Science and Information Engineering, Liaocheng University, Liaocheng252059, China
| | - Weisheng Li
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing210023, China
| | - Wei Zhang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing211816, China
| | - Haizeng Song
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing210023, China
| | - Hehe Zhang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing211816, China
| | - Kan Liao
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing210023, China
| | - Jie Deng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai200083, China
| | - Si Li
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing210023, China
| | - Ziyue Xing
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an710072, China
| | - Yu Yu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai200083, China
| | - Yudi Tu
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen518060, China
| | - Wenhui Wang
- School of Physics, Southeast University, Nanjing211189, China
| | - Jinlian Chen
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing211816, China
| | - Jing Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai200083, China
| | - Xuefen Song
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing211816, China
| | - Linghai Zhang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing211816, China
| | - Xiaoyong Wang
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing210023, China
| | - Shuchao Qin
- School of Physical Science and Information Engineering, Liaocheng University, Liaocheng252059, China
| | - Yi Shi
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing210023, China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an710072, China
| | - Lin Wang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing211816, China
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8
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Zhang Y, Wang L, Lei Y, Wang B, Lu Y, Yao Y, Zhang N, Lin D, Jiang Z, Guo H, Zhang J, Hu H. Self-Powered Bidirectional Photoresponse in High-Detectivity WSe 2 Phototransistor with Asymmetrical van der Waals Stacking for Retinal Neurons Emulation. ACS NANO 2022; 16:20937-20945. [PMID: 36413009 DOI: 10.1021/acsnano.2c08542] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
An artificial retina system shows a promising potential to achieve fast response, low power consumption, and high integration density for vision sensing systems. Optoelectronic sensors, which can emulate the neurobiological functionalities of retinal neurons, are crucial in the artificial retina systems. Here, we propose a WSe2 phototransistor with asymmetrical van der Waals (vdWs) stacking that can be used as an optoelectronic sensor in artificial retina systems. Through the utilization of the gate-tunable self-powered bidirectional photoresponse of this phototransistor, the neurobiological functionalities of both bipolar cells and cone cells, as well as the hierarchical connectivity between these two types of retinal neurons, are successfully mimicked by a single device. This self-powered bidirectional photoresponse is attributed to the asymmetrical vdWs stacking structure, which enables the transition from an n-p to p+-p homojunction in the WSe2 channel under different polarities of gate bias. Moreover, the detectivity and ON/OFF ratio of this phototransistor reach as high as 1.8 × 1013 Jones and 5.3 × 104, respectively, and a rise/fall time <80 μs is achieved, as well, which reveals good photodetection performance. The proof of this device provides a pathway for the future development of neuromorphic vision devices and systems.
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Affiliation(s)
- Yichi Zhang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Liming Wang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Yuanying Lei
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Bo Wang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Yao Lu
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Youyuan Yao
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Ningning Zhang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Dongdong Lin
- Qian Xuesen Collaborative Research Center of Astrochemistry and Space Life Sciences, Department of Microelectronic Science and Engineering, Ningbo University, Ningbo315211, China
| | - Zuimin Jiang
- Department of Physics, Fudan University, Shanghai200433, China
| | - Hui Guo
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Jincheng Zhang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
| | - Huiyong Hu
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University, Xi'an710071, China
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9
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Li C, Tian R, Chen X, Gu L, Luo Z, Zhang Q, Yi R, Li Z, Jiang B, Liu Y, Castellanos-Gomez A, Chua SJ, Wang X, Sun Z, Zhao J, Gan X. Waveguide-Integrated MoTe 2 p- i- n Homojunction Photodetector. ACS NANO 2022; 16:20946-20955. [PMID: 36413764 DOI: 10.1021/acsnano.2c08549] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Two-dimensional (2D) materials, featuring distinctive electronic and optical properties and dangling-bond-free surfaces, are promising for developing high-performance on-chip photodetectors in photonic integrated circuits. However, most of the previously reported devices operating in the photoconductive mode suffer from a high dark current or a low responsivity. Here, we demonstrate a MoTe2 p-i-n homojunction fabricated directly on a silicon photonic crystal (PC) waveguide, which enables on-chip photodetection with ultralow dark current, high responsivity, and fast response speed. The adopted silicon PC waveguide is electrically split into two individual back gates to selectively dope the top regions of the MoTe2 channel in p- or n-types. High-quality reconfigurable MoTe2 (p-i-n, n-i-p, n-i-n, p-i-p) homojunctions are realized successfully, presenting rectification behaviors with ideality factors approaching 1.0 and ultralow dark currents less than 90 pA. Waveguide-assisted MoTe2 absorption promises a sensitive photodetection in the telecommunication O-band from 1260 to 1340 nm, though it is close to MoTe2's absorption band-edge. A competitive photoresponsivity of 0.4 A/W is realized with a light on/off current ratio exceeding 104 and a record-high normalized photocurrent-to-dark-current ratio of 106 mW-1. The ultrasmall capacitance of p-i-n homojunction and high carrier mobility of MoTe2 promise a high dynamic response bandwidth close to 34.0 GHz. The proposed device geometry has the advantages of employing a silicon PC waveguide as the back gates to build a 2D material p-i-n homojunction directly and simultaneously to enhance light-2D material interaction. It provides a potential pathway to develop 2D material-based photodetectors, laser diodes, and electro-optic modulators on silicon photonic chips.
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Affiliation(s)
- Chen Li
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Ruijuan Tian
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Xiaoqing Chen
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Linpeng Gu
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Zhengdong Luo
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an710071, China
| | - Qiao Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Ruixuan Yi
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Zhiwen Li
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Biqiang Jiang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Yan Liu
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an710071, China
| | - Andres Castellanos-Gomez
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), MadridE-28049, Spain
| | - Soo-Jin Chua
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore
- LEES Program, Singapore-MIT Alliance for Research & Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, 138602, Singapore
| | - Xiaomu Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing210093, China
| | - Zhipei Sun
- Department of Electronics and Nanoengineering and QTF Centre of Excellence, Aalto University, AaltoFI-00076, Finland
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
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10
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Luo Z, Yang M, Wu D, Huang Z, Gao W, Zhang M, Zhou Y, Zhao Y, Zheng Z, Li J. Rational Design of WSe 2 /WS 2 /WSe 2 Dual Junction Phototransistor Incorporating High Responsivity and Detectivity. SMALL METHODS 2022; 6:e2200583. [PMID: 35871503 DOI: 10.1002/smtd.202200583] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2022] [Revised: 06/24/2022] [Indexed: 06/15/2023]
Abstract
The excellent semiconducting properties and ultrathin morphological characteristics allow van der Waals (vdW) heterostructures based on 2D materials to be promising channel materials for the next-generation optoelectronic devices, especially in photodetectors. Although various 2D heterostructure-based photodetectors have been developed, the unavoidable trade-off between responsivity and detectivity remains a critical issue for these devices. Here, an ingenious phototransistor based on WSe2 /WS2 /WSe2 dual-vdW heterostructures is constructed, performing both high responsivity and detectivity. In the charge neutrality point (gate voltage of -15 V and bias voltage of 1 V), this device demonstrates a pronounced photosensitivity, accompanying with high detectivity of 1.9 × 1014 Jones, high responsivity of 35.4 A W-1 , and fast rise/fall time of 3.2/2.5 ms at 405 nm with power density of 60 µW cm-2 . Density functional theory calculations, energy band profiles, and optoelectronic characteristics jointly verify that the high performance is ascribed to the distinctive device design, which not only facilitates the separation of photogenerated carriers but also produces a strong photogating effect. As a feasible application, an automotive radar system is demonstrated, proving that the device has considerable potential for application in vehicle intelligent assisted driving.
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Affiliation(s)
- Zhongtong Luo
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Dongsi Wu
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Zihao Huang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Wei Gao
- Institute of Semiconductors, South China Normal University, Guangzhou, Guangdong, 510631, P. R. China
| | - Menglong Zhang
- Institute of Semiconductors, South China Normal University, Guangzhou, Guangdong, 510631, P. R. China
| | - Yuchen Zhou
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jingbo Li
- Institute of Semiconductors, South China Normal University, Guangzhou, Guangdong, 510631, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, Guangdong, 510631, P. R. China
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11
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Zeng P, Wang W, Han D, Zhang J, Yu Z, He J, Zheng P, Zheng H, Zheng L, Su W, Huo D, Ni Z, Zhang Y, Wu Z. MoS 2/WSe 2 vdW Heterostructures Decorated with PbS Quantum Dots for the Development of High-Performance Photovoltaic and Broadband Photodiodes. ACS NANO 2022; 16:9329-9338. [PMID: 35687375 DOI: 10.1021/acsnano.2c02012] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
van der Waals heterostructures (vdWHs) overcoming the lattice and processing limitations of conventional heterostructures provide an opportunity to develop high-performance 2D vdWH solar cells and photodiodes. However, it is challenging to improve the sensitivity and response speed of 2D vdWH photovoltaic devices due to the low light absorption efficiency and electron/hole traps in heterointerfaces. Here, we design a PbS/MoS2/WSe2 heterostructure photodiode in which a light-sensitive PbS quantum dot (QD) layer combined with a MoS2/WSe2 heterostructure significantly enhances the photovoltaic response. The electron current in the heterostructure is increased by the effective collection of photogenerated electrons induced by PbS QDs. The device exhibits a broadband photovoltaic response from 405 to 1064 nm with a maximum responsivity of 0.76 A/W and a specific detectivity of 5.15 × 1011 Jones. In particular, the response speed is not limited by multiple electron traps in the PbS QDs/2D material heterointerface, and a fast rising/decaying time of 43/48 μs and a -3 dB cutoff frequency of over 10 kHz are achieved. The negative differential capacitance and frequency dependence of capacitance demonstrate the presence of interface states in the MoS2/WSe2 heterointerface that hamper the improvement of the response speed. The scheme to enhance photovoltaic performance without sacrificing response speed provides opportunities for the development of high-performance 2D vdWH optoelectronic devices.
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Affiliation(s)
- Peiyu Zeng
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Wenhui Wang
- School of Physics, Southeast University, Nanjing 211189, China
| | - Dongshuang Han
- School of Sciences, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Jundong Zhang
- School of Sciences, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Zhihao Yu
- College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Jiaoyan He
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Peng Zheng
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Hui Zheng
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Liang Zheng
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Weitao Su
- School of Sciences, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Dexuan Huo
- Institute of Materials Physics, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Zhenhua Ni
- School of Physics, Southeast University, Nanjing 211189, China
- School of Physics, Purple Mountain Laboratories, Southeast University, Nanjing 21119, China
| | - Yang Zhang
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Zhangting Wu
- Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China
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12
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Wang J, Han N, Luo ZD, Zhang M, Chen X, Liu Y, Hao Y, Zhao J, Gan X. Electrically Tunable Second Harmonic Generation in Atomically Thin ReS 2. ACS NANO 2022; 16:6404-6413. [PMID: 35426299 DOI: 10.1021/acsnano.2c00514] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Electrical tuning of second-order nonlinearity in optical materials is attractive to strengthen and expand the functionalities of nonlinear optical technologies, though its implementation remains elusive. Here, we report the electrically tunable second-order nonlinearity in atomically thin ReS2 flakes benefiting from their distorted 1T crystal structure and interlayer charge transfer. Enabled by the efficient electrostatic control of the few-atomic-layer ReS2, we show that second harmonic generation (SHG) can be induced in odd-number-layered ReS2 flakes which are centrosymmetric and thus without intrinsic SHG. Moreover, the SHG can be precisely modulated by the electric field, reversibly switching from almost zero to an amplitude more than 1 order of magnitude stronger than that of the monolayer MoS2. For the even-number-layered ReS2 flakes with the intrinsic SHG, the external electric field could be leveraged to enhance the SHG. We further perform the first-principles calculations which suggest that the modification of in-plane second-order hyperpolarizability by the redistributed interlayer-transferring charges in the distorted 1T crystal structure underlies the electrically tunable SHG in ReS2. With its active SHG tunability while using the facile electrostatic control, our work may further expand the nonlinear optoelectronic functions of two-dimensional materials for developing electrically controllable nonlinear optoelectronic devices.
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Affiliation(s)
- Jing Wang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129 China
| | - Nannan Han
- Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China
| | - Zheng-Dong Luo
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Mingwen Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129 China
| | - Xiaoqing Chen
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129 China
| | - Yan Liu
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Yue Hao
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129 China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129 China
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13
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Li S, Zhang Z, Chen X, Deng W, Lu Y, Sui M, Gong F, Xu G, Li X, Liu F, You C, Chu F, Wu Y, Yan H, Zhang Y. A High-Performance In-Memory Photodetector Realized by Charge Storage in a van der Waals MISFET. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107734. [PMID: 35014726 DOI: 10.1002/adma.202107734] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2021] [Revised: 12/05/2021] [Indexed: 06/14/2023]
Abstract
The emerging data-intensive applications in optoelectronics are driving innovation toward the fused integration of sensing, memory, and computing to break through the restrictions of the von Neumann architecture. However, the present photodetectors with only optoelectronic conversion functions cannot satisfy the growing demands of the multifunctions required in single devices. Here, a novel route for the integration of non-volatile memory into a photodetector is proposed, with a WSe2 /h-BN van der Waals heterostructure on a Si/SiO2 substrate to realize in-memory photodetection. This photodetector exhibits an ultrahigh readout photocurrent of 3.4 µA and photoresponsivity of 337.8 A W-1 in the solar-blind wavelength region, together with an extended retention time of more than 10 years. Furthermore, the charge-storage-based non-volatile mechanism of h-BN/SiO2 is successfully proven through a novel analysis of in situ optoelectronic electron energy-loss spectroscopy. These results represent a leap forward to future applications and insightful mechanisms of in-memory photodetection.
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Affiliation(s)
- Songyu Li
- Key Laboratory of Optoelectronics Technology, College of Microelectronics, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Zeyu Zhang
- Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Xiaoqing Chen
- Key Laboratory of Optoelectronics Technology, College of Microelectronics, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
| | - Wenjie Deng
- Key Laboratory of Optoelectronics Technology, College of Microelectronics, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
| | - Yue Lu
- Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Manling Sui
- Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Fan Gong
- Key Laboratory of Optoelectronics Technology, College of Microelectronics, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
| | - Guoliang Xu
- Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Xuhong Li
- Key Laboratory of Optoelectronics Technology, College of Microelectronics, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Famin Liu
- School of Physics, Beihang University, Beijing, 100191, China
| | - Congya You
- Key Laboratory of Optoelectronics Technology, College of Microelectronics, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
| | - Feihong Chu
- Key Laboratory of Optoelectronics Technology, College of Microelectronics, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
| | - Yi Wu
- Key Laboratory of Optoelectronics Technology, College of Microelectronics, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
| | - Hui Yan
- Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Yongzhe Zhang
- Key Laboratory of Optoelectronics Technology, College of Microelectronics, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
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14
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Lu J, Deng Z, Ye Q, Zheng Z, Yao J, Yang G. Promoting the Performance of 2D Material Photodetectors by Dielectric Engineering. SMALL METHODS 2022; 6:e2101046. [PMID: 34935297 DOI: 10.1002/smtd.202101046] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2021] [Revised: 11/24/2021] [Indexed: 06/14/2023]
Abstract
Low light absorption and limited carrier lifetime are two limiting factors hampering the further breakthrough of the performance of 2D materials (2DMs)-based photodetectors. This study proposes an ingenious dielectric engineering strategy toward boosting the photosensitivity. Periodic dielectric structures (PDSs), including SiO2 /h-BN, SiO2 /Al2 O3 , and SiO2 /SrTiO3 (STO), are exploited to couple with 2D photosensitive channels (denoted as PDS-2DMs). The responsivity, external quantum efficiency, and detectivity of an optimized SiO2 /STO(300 nm) -WSe2 photodetector reach 89081 A W-1 , 2.7 × 107 %, and 1.8 × 1013 Jones, respectively. These performance metrics are orders of magnitude higher than a pristine WSe2 photodetector, enabling reliable sub-1 pW weak light detection. Based on systematic characterizations and first-principle calculations, such dramatic performance improvement is associated with the promoted direct bandgap transition, reduced exciton binding energy, and PDS-induced periodic intramolecular built-in electric field across the atomically thin channels, which efficiently separates the photoexcited electron-hole pairs. More inspiringly, this strategy is also successfully exploited to 2D WS2 photodetectors, demonstrating broad applicability. As a whole, this work promises an exceptional avenue to ameliorate 2DM photodetectors and opens up a new horizon "dielectric optoelectronics," simultaneously highlighting the role of dielectric environment during analyzing the fundamentals of 2DM devices.
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Affiliation(s)
- Jianting Lu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Zexiang Deng
- School of Physics, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Qiaojue Ye
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
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15
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Ma W, Gao Y, Shang L, Zhou W, Yao N, Jiang L, Qiu Q, Li J, Shi Y, Hu Z, Huang Z. Ultrabroadband Tellurium Photoelectric Detector from Visible to Millimeter Wave. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103873. [PMID: 34923772 PMCID: PMC8844568 DOI: 10.1002/advs.202103873] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2021] [Revised: 11/18/2021] [Indexed: 05/19/2023]
Abstract
Ultrabroadband photodetection is of great significance in numerous cutting-edge technologies including imaging, communications, and medicine. However, since photon detectors are selective in wavelength and thermal detectors are slow in response, developing high performance and ultrabroadband photodetectors is extremely difficult. Herein, one demonstrates an ultrabroadband photoelectric detector covering visible, infrared, terahertz, and millimeter wave simultaneously based on single metal-Te-metal structure. Through the two kinds of photoelectric effect synergy of photoexcited electron-hole pairs and electromagnetic induced well effect, the detector achieves the responsivities of 0.793 A W-1 at 635 nm, 9.38 A W-1 at 1550 nm, 9.83 A W-1 at 0.305 THz, 24.8 A W-1 at 0.250 THz, 87.8 A W-1 at 0.172 THz, and 986 A W-1 at 0.022 THz, respectively. It also exhibits excellent polarization detection with a dichroic ratio of 468. The excellent performance of the detector is further verified by high-resolution imaging experiments. Finally, the high stability of the detector is tested by long-term deposition in air and high-temperature aging. The strategy provides a recipe to achieve ultrabroadband photodetection with high sensitivity and fast response utilizing full photoelectric effect.
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Affiliation(s)
- Wanli Ma
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu Tian RoadShanghai200083P. R. China
- University of Chinese Academy of Sciences19 Yu Quan RoadBeijing100049P. R. China
| | - Yanqing Gao
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu Tian RoadShanghai200083P. R. China
| | - Liyan Shang
- Technical Center for Multifunctional Magneto‐Optical Spectroscopy (Shanghai)Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education)Department of MaterialsSchool of Physics and Electronic ScienceEast China Normal University500 Dongchuan RoadShanghai200241P. R. China
| | - Wei Zhou
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu Tian RoadShanghai200083P. R. China
| | - Niangjuan Yao
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu Tian RoadShanghai200083P. R. China
| | - Lin Jiang
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu Tian RoadShanghai200083P. R. China
| | - Qinxi Qiu
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu Tian RoadShanghai200083P. R. China
- University of Chinese Academy of Sciences19 Yu Quan RoadBeijing100049P. R. China
| | - Jingbo Li
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu Tian RoadShanghai200083P. R. China
- University of Chinese Academy of Sciences19 Yu Quan RoadBeijing100049P. R. China
| | - Yi Shi
- Donghua University2999 North Renmin RoadShanghai201620P. R. China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto‐Optical Spectroscopy (Shanghai)Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education)Department of MaterialsSchool of Physics and Electronic ScienceEast China Normal University500 Dongchuan RoadShanghai200241P. R. China
| | - Zhiming Huang
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu Tian RoadShanghai200083P. R. China
- Key Laboratory of Space Active Opto‐Electronics TechnologyShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu Tian RoadShanghai200083P. R. China
- Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of Sciences1 Sub‐Lane XiangshanHangzhou310024P. R. China
- Institute of OptoelectronicsFudan University2005 Songhu RoadShanghai200438P. R. China
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16
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Du Q, Qin S, Wang Z, Gan Y, Zhang Y, Fan L, Liu Y, Li S, Dong R, Liu C, Wang W, Wang F. Highly Sensitive and Ultrafast Organic Phototransistor Based on Rubrene Single Crystals. ACS APPLIED MATERIALS & INTERFACES 2021; 13:57735-57742. [PMID: 34841872 DOI: 10.1021/acsami.1c18862] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Rubrene single crystals have received a lot of attention for their great potential in electronic and wearable nanoelectronics due to their high carrier mobility and excellent flexibility. While they exhibited remarkable electrical performances, their intrinsic potential as photon detectors has not been fully exploited. Here, we fabricate a sensitive and ultrafast organic phototransistor based on rubrene single crystals. The device covers the ultraviolet to visible range (275-532 nm), and the responsivity and detectivity can reach up to ∼4000 A W-1 and 1011 jones at 532 nm, respectively. Furthermore, the response times are highly gate-tunable down to sub-90 μs, and the cutoff frequency is ∼4 kHz, which is one of the fastest organic material-based phototransistors reported so far. Equally important is that the fabricated device exhibits stable light detection ability even after 8 months, indicating great long-term stability and excellent environmental robustness. The results suggest that the high-quality rubrene single crystal may be a promising material for future flexible optoelectronics with its intrinsic mechanical flexibility.
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Affiliation(s)
- Qianqian Du
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Shuchao Qin
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Zhifeng Wang
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Yuquan Gan
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Yuting Zhang
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Linsheng Fan
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Yunlong Liu
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Shuhong Li
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Ruixin Dong
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Cailong Liu
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Wenjun Wang
- Key Laboratory of Optical Communication Science and Technology of Shandong Province, School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
| | - Fengqiu Wang
- School of Electronic Science and Engineering and Key Laboratory of Intelligent Optical Sensing and Manipulation, Ministry of Education, Nanjing University, Nanjing 210093, China
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17
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Liu Y, Liu Y, Zhou H, Yang Z, Qu Y, Tan Y, Chen F. Defect Engineering of Out-of-Plane Charge Transport in van der Waals Heterostructures for Bi-Direction Photoresponse. ACS NANO 2021; 15:16572-16580. [PMID: 34550681 DOI: 10.1021/acsnano.1c06238] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Defects are ubiquitous in two-dimensional (2D) transition-metal dichalcogenides (TMDs), generated by the initial growth- or the postprocessing. However, the defects may play negative roles in the photoelectronic properties of TMDs due to the reduction of in-plane transport of carriers. In this work, we demonstrate that the Se-vacancy defects in MoSe2 side of the van der Waal heterostructure is able to switch direction of out-of-plane charge transport. Photoresponse spectra showed defect density enable modified surface potential of MoSe2-x, leading to the barrier reverse between graphene and MoSe2-x and switches of the photoresponse from the negative to the positive. This unexpected property stemmed from appearance of midgap states by defects at heterostructure, as demonstrated by the density functional theory calculation and scanning tunneling microscope results. MoSe2-0.2/graphene heterostructure has a broadband response ranging from 450 to 1064 nm and exhibits comparable or higher positive responsivity (5.4 × 103 A/W to -15.3 × 103 A/W at 632.8 and 5.7 × 103 A/W to -1.2 × 103 A/W at 1064 nm) to the negative one of the pristine MoSe2/graphene. Based on defect-engineered heterostructures, we construct optoelectronic OR and AND logic devices with a broadband operation. Our work elucidates an alternative avenue to tailor the out-of-plane charge transport in TMD-based heterostructure through defects, and potentially invokes applicable utilization for 2D photodetectors and optoelectronic logic gates.
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Affiliation(s)
- Yanran Liu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandong, Jinan 250100, P. R. China
| | - Yue Liu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandong, Jinan 250100, P. R. China
| | - Hua Zhou
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandong, Jinan 250100, P. R. China
| | - Zaixing Yang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandong, Jinan 250100, P. R. China
| | - Yuanyuan Qu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandong, Jinan 250100, P. R. China
| | - Yang Tan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandong, Jinan 250100, P. R. China
| | - Feng Chen
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandong, Jinan 250100, P. R. China
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