Scalable Van der Waals Encapsulation by Inorganic Molecular Crystals

Solution-Processable and Printable Two-Dimensional Transition Metal Dichalcogenide Inks

Two-dimensional (2D) transition metal dichalcogenides (TMDs) with layered crystal structures have been attracting enormous research interest for their atomic thickness, mechanical flexibility, and excellent electronic/optoelectronic properties for applications in diverse technological areas. Solution-processable 2D TMD inks are promising for large-scale production of functional thin films at an affordable cost, using high-throughput solution-based processing techniques such as printing and roll-to-roll fabrications. This paper provides a comprehensive review of the chemical synthesis of solution-processable and printable 2D TMD ink materials and the subsequent assembly into thin films for diverse applications. We start with the chemical principles and protocols of various synthesis methods for 2D TMD nanosheet crystals in the solution phase. The solution-based techniques for depositing ink materials into solid-state thin films are discussed. Then, we review the applications of these solution-processable thin films in diverse technological areas including electronics, optoelectronics, and others. To conclude, a summary of the key scientific/technical challenges and future research opportunities of solution-processable TMD inks is provided.

Emerging van der Waals Dielectrics of Inorganic Molecular Crystals for 2D Electronics

In the landscape of continuous downscaling metal-oxide-semiconductor field-effect transistors, two-dimensional (2D) semiconductors with atomic thinness emerge as promising channel materials for ultimate scaled devices. However, integrating compatible dielectrics with 2D semiconductors, particularly in a scalable way, remains a critical challenge that hinders the development of 2D devices. Recently, 2D inorganic molecular crystals (IMCs), which are free of dangling bonds and possess excellent dielectric properties and simplicity for scalable fabrication, have emerged as alternatives for gate dielectric integration in 2D devices. In this Perspective, we start with the introduction of structure and synthesis methods of IMCs and then discuss the explorations of using IMCs as the dielectrics, as well as some remaining relevant issues to be unraveled. Moreover, we look at the future opportunities of IMC dielectrics in 2D devices both for practical applications and fundamental research.

The Roadmap of 2D Materials and Devices Toward Chips

Due to the constraints imposed by physical effects and performance degradation, silicon-based chip technology is facing certain limitations in sustaining the advancement of Moore's law. Two-dimensional (2D) materials have emerged as highly promising candidates for the post-Moore era, offering significant potential in domains such as integrated circuits and next-generation computing. Here, in this review, the progress of 2D semiconductors in process engineering and various electronic applications are summarized. A careful introduction of material synthesis, transistor engineering focused on device configuration, dielectric engineering, contact engineering, and material integration are given first. Then 2D transistors for certain electronic applications including digital and analog circuits, heterogeneous integration chips, and sensing circuits are discussed. Moreover, several promising applications (artificial intelligence chips and quantum chips) based on specific mechanism devices are introduced. Finally, the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed, and potential development pathways or roadmaps are further speculated and outlooked.

High-Throughput Search for Triplet Point Defects with Narrow Emission Lines in 2D Materials

We employ a first-principles computational workflow to screen for optically accessible, high-spin point defects in wide band gap, two-dimensional (2D) crystals. Starting from an initial set of 5388 point defects, comprising both native and extrinsic, single and double defects in ten previously synthesized 2D host materials, we identify 596 defects with a triplet ground state. For these defects, we calculate the defect formation energy, hyperfine (HF) coupling, and zero-field splitting (ZFS) tensors. For 39 triplet transitions exhibiting particularly low Huang-Rhys factors, we calculate the full photoluminescence (PL) spectrum. Our approach reveals many spin defects with narrow PL line shapes and emission frequencies covering a broad spectral range. Most of the defects are hosted in hexagonal BN (hBN), which we ascribe to its high stiffness, but some are also found in MgI2, MoS2, MgBr2 and CaI2. As specific examples, we propose the defects vSMoS0 and NiSMoS0 in MoS2 as interesting candidates with potential applications to magnetic field sensors and quantum information technology.

On the Working Mechanisms of Molecules-Based Van der Waals Dielectrics

Sb2 O3 molecules offer unprecedented opportunities for the integration of a van der Waals (vdW) dielectric and a 2D vdW semiconductor. However, the working mechanisms underlying molecules-based vdW dielectrics remain unclear. Here, the working mechanisms of Sb2 O3 and two Sb2 O3 -like molecules (As2 O3 and Bi2 O3 ) as dielectrics are systematically investigated by combining first-principles calculations and gate leakage current theories. It is revealed that molecules-based vdW dielectrics have a considerable advantage over conventional dielectric materials: defects hardly affect their insulating properties. This shows that it is unnecessary to synthesize high-quality crystals in practical applications, which has been a long-standing challenge for conventional dielectric materials. Further analysis reveals that a large thermionic-emission current renders Sb2 O3 difficult to simultaneously satisfy the requirements of dielectric layers in p-MOS and n-MOS, which hinders its application for complementary metal-oxide-semiconductor (CMOS) devices. Remarkably, it is found that As2 O3 can serve as a dielectric for both p-MOS and n-MOS. This work not only lays a theoretical foundation for the application of molecules-based vdW dielectrics, but also offers an unprecedentedly competitive dielectric (i.e., As2 O3 ) for 2D vdW semiconductors-based CMOS devices, thus having profound implications for future semiconductor industry.

Gate Dielectrics Integration for 2D Electronics: Challenges, Advances, and Outlook

2D semiconductors have emerged both as an ideal platform for fundamental studies and as promising channel materials in beyond-silicon field-effect-transistors due to their outstanding electrical properties and exceptional tunability via external field. However, the lack of proper dielectrics for 2D semiconductors has become a major roadblock for their further development toward practical applications. The prominent issues between conventional 3D dielectrics and 2D semiconductors arise from the integration and interface quality, where defect states and imperfections lead to dramatic deterioration of device performance. In this review article, the root causes of such issues are briefly analyzed and recent advances on some possible solutions, including various approaches of adapting conventional dielectrics to 2D semiconductors, and the development of novel dielectrics with van der Waals surface toward high-performance 2D electronics are summarized. Then, in the perspective, the requirements of ideal dielectrics for state-of-the-art 2D devices are outlined and an outlook for their future development is provided.

Giant Tunability of Charge Transport in 2D Inorganic Molecular Crystals by Pressure Engineering

The unique intermolecular van der Waals force in emerging two-dimensional inorganic molecular crystals (2DIMCs) endows them with highly tunable structures and properties upon applying external stimuli. Using high pressure to modulate the intermolecular bonding, here we reveal the highly tunable charge transport behavior in 2DIMCs for the first time, from an insulator to a semiconductor. As pressure increases, 2D α-Sb₂ O₃ molecular crystal undergoes three isostructural transitions, and the intermolecular bonding enhances gradually, which results in a considerably decreased band gap by 25 % and a greatly enhanced charge transport. Impressively, the in situ resistivity measurement of the α-Sb₂ O₃ flake shows a sharp drop by 5 orders of magnitude in 0-3.2 GPa. This work sheds new light on the manipulation of charge transport in 2DIMCs and is of great significance for promoting the fundamental understanding and potential applications of 2DIMCs in advanced modern technologies.

Stability and passivation of 2D group VA elemental materials: black phosphorus and beyond

Since the successful isolation of graphene in 2004, two-dimensional (2D) materials have become one of the focuses in material science owing to their extraordinary physical and chemical properties. In particular, 2D group VA elemental materials exhibit fascinating thickness-dependent band structures. Unfortunately, the well-known instability issue hinders their fundamental researches and practical applications. In this review, we first discuss the degradation mechanism of black phosphorus (BP), a most studied group VA material. Next, we summarize the methods to enhance BP stability with the focus of multifunctional passivation. Finally, we briefly discuss the protection strategies of other emerging group VA materials in recent years. This review provides insight for the degradation mechanism and protecting strategy for 2D group VA elements materials, which will promote their potential applications in electronics, optoelectronics, and biomedicine.

Universal p-Type Doping via Lewis Acid for 2D Transition-Metal Dichalcogenides

Developing spatially controlled and universal p-type doping of transition-metal dichalcogenides (TMDs) is critical for optoelectronics. Here, a facile and universal p-doping strategy via Sn⁴⁺ ions exchanging is proposed and the p-doping of PdSe₂ is demonstrated systematically as the example. The polarity of PdSe₂ can be modulated from n-type to bipolar and p-type precisely by changing the concentration of SnCl₄ solution. The modulation effectively reduces the electron concentration and improves the work function by ∼72 meV. In addition, the solution-processable route makes the spatially controlled doping possible, which is demonstrated by constructing the lateral PdSe₂ p-n homojunction with rectification behavior and photovoltaic effect. This p-doping method has been further proved in modulating various TMDs including WSe₂, WS₂, ReSe₂, MoSe₂, MoTe₂, and PtSe₂. This spatially controlled and universal method based on Sn atoms substitution realizes p-type doping of TMDs.

2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges

A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.