A New Polystyrene-Poly(vinylpyridinium) Ionic Copolymer Dopant for n-Type All-Polymer Thermoelectrics with High and Stable Conductivity Relative to the Seebeck Coefficient giving High Power Factor

Side-chain engineering of conjugated molecules for n-type organic thermoelectrics

The growing need for renewable energy sources has led to increased interest in organic thermoelectric (OTE) materials, which are mechanically flexible, cost-effective to process, and capable of converting thermal energy into electricity. Although p-type OTEs have shown promising efficiency, the development of n-type OTEs has not kept pace with their p-type counterparts in terms of performance, highlighting the need for additional research and innovation. This review outlines the basic principles and molecular design strategies for n-type OTEs. It then examines side-chain engineering in-depth, underscoring the complementary effects of backbone and side-chain modifications. Lastly, it discusses the challenges and future directions in developing n-type OTEs to inform the design strategies for these materials.

High power output density organic thermoelectric devices for practical applications in waste heat harvesting

Organic thermoelectric (TE) materials are of great interest for researchers in waste heat recovery, especially for waste heat harvesting at near room temperature. Significant progress has been achieved in terms of their figure of merit (zT) values recently, which has presented new insights into the development of organic TE materials. For numerous practical applications of thermoelectric generators, where waste heat is unlimited and cost negligible, the primary goal has been switched to achieve high power output density rather than improving their heat-to-electricity conversion efficiency. In this review, we first discussed the theoretical relationship between the thermoelectric properties of organic materials and the power output density of devices. Then, we analyzed the state-of-the-art strategies for improving the power factor of organic materials. Methods for modulating the structure of the TE legs were discussed with an aim to maintain the temperature difference between the hot side and the cold side of the devices. Finally, some representative devices were summarized for the potential applications of the TEGs along with an outlook on the future of organic thermoelectric materials and devices.

High-Performance n-Type Organic Thermoelectrics with Exceptional Conductivity by Polymer-Dopant Matching

Achieving high electrical conductivity (σ) and power factor (PF) simultaneously remains a significant challenge for n-type organic themoelectrics (OTEs). Herein, we demonstrate the state-of-the-art OTEs performance through blending a fused bithiophene imide dimer-based polymer f-BTI2g-SVSCN and its selenophene-substituted analogue f-BSeI2g-SVSCN with a julolidine-functionalized benzimidazoline n-dopant JLBI, vis-à-vis when blended with commercially available n-dopants TAM and N-DMBI. The advantages of introducing a more lipophilic julolidine group into the dopant structure of JLBI are evidenced by the enhanced OTEs performance that JLBI-doped films show when compared to those doped with N-DMBI or TAM. In fact, thanks to the enhanced intermolecular interactions and the lower-lying LUMO level enabled by the increase of selenophene content in polymer backbone, JLBI-doped films of f-BSeI2g-SVSCN exhibit a unprecedent σ of 206 S cm-1 and a PF of 114 μW m-1 K-2. Interestingly, σ can be further enhanced up to 326 S cm-1 by using TAM dopant as a consequence of its favorable diffusion behavior into densely packed crystalline domains. These values are the highest to date for solution-processed molecularly n-doped polymers, demonstrating the effectiveness of the polymer-dopant matching approach carried out in this work.

Isomers of n-Type Poly(thiophene-alt-co-thiazole) for Organic Thermoelectrics

n-Type polythiophene represents a promising category of n-type polymer thermoelectric materials known for their straightforward structure and scalable synthesis. However, n-type polythiophene often suffers from a twisted backbone and poor stacking property when introducing high-density electron-withdrawing groups for a lower lowest unoccupied molecular orbital (LUMO) level, which is considered to be beneficial for n-doping efficiency. Herein, we developed two isomers of polythiophene derivatives, PTTz1 and PTTz2, by inserting thiazole units into the polythiophene backbone composed of thieno[3,4-c]pyrrole-4,6-dione (TPD) and thiophene-3,4-dicarbonitrile (2CNT). Although PTTz1 and PTTz2 share a similar polymer skeleton, they differ in thiazole configuration, with the nitrogen atoms of the thiazole units oriented toward TPD and 2CNT, respectively. The insertion of thiazole units significantly planarizes the polythiophene backbone while largely preserving low LUMO levels. Notably, PTTz2 exhibits a more coplanar backbone and closer π-stacking compared to PTTz1, resulting in a greatly enhanced electron mobility. Both PTTz1 and PTTz2 can be easily n-doped due to their deep LUMO levels. PTTz2 demonstrates superior thermoelectric performance, with an electrical conductivity of 50.3 S cm-1 and a power factor of 23.8 μW m-1 K-2, which is approximately double that of PTTz1. This study highlights the impact of the thiazole unit on n-type polythiophene derivatives and provides valuable guidelines for the design of high-performance n-type polymer thermoelectric materials.

Multi-Selenophene Incorporated Thiazole Imide-Based n-Type Polymers for High-Performance Organic Thermoelectrics

Developing polymers with high electrical conductivity (σ) after n-doping is a great challenge for the advance of the field of organic thermoelectrics (OTEs). Herein, we report a series of thiazole imide-based n-type polymers by gradually increasing selenophene content in polymeric backbone. Thanks to the strong intramolecular noncovalent N⋅⋅⋅S interaction and enhanced intermolecular Se⋅⋅⋅Se interaction, with the increase of selenophene content, the polymers show gradually lowered LUMOs, more planar backbone, and improved film crystallinity versus the selenophene-free analogue. Consequently, polymer PDTzSI-Se with the highest selenophene content achieves a champion σ of 164.0 S cm-1 and a power factor of 49.0 μW m-1  K-2 in the series when applied in OTEs after n-doping. The σ value is the highest one for n-type donor-acceptor OTE materials reported to date. Our work indicates that selenophene substitution is a powerful strategy for developing high-performance n-type OTE materials and selenophene incorporated thiazole imides offer an excellent platform in enabling n-type polymers with high backbone coplanarity, deep-lying LUMO and enhanced mobility/conductivity.

Efficient and air-stable n-type doping in organic semiconductors

Chemical doping of organic semiconductors (OSCs) enables feasible tuning of carrier concentration, charge mobility, and energy levels, which is critical for the applications of OSCs in organic electronic devices. However, in comparison with p-type doping, n-type doping has lagged far behind. The achievement of efficient and air-stable n-type doping in OSCs would help to significantly improve electron transport and device performance, and endow new functionalities, which are, therefore, gaining increasing attention currently. In this review, the issue of doping efficiency and doping air stability in n-type doped OSCs was carefully addressed. We first clarified the main factors that influenced chemical doping efficiency in n-type OSCs and then explain the origin of instability in n-type doped films under ambient conditions. Doping microstructure, charge transfer, and dissociation efficiency were found to determine the overall doping efficiency, which could be precisely tuned by molecular design and post treatments. To further enhance the air stability of n-doped OSCs, design strategies such as tuning the lowest unoccupied molecular orbital (LUMO) energy level, charge delocalization, intermolecular stacking, in situ n-doping, and self-encapsulations are discussed. Moreover, the applications of n-type doping in advanced organic electronics, such as solar cells, light-emitting diodes, field-effect transistors, and thermoelectrics are being introduced. Finally, an outlook is provided on novel doping ways and material systems that are aimed at stable and efficient n-type doped OSCs.