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Yang W, Feng K, Ma S, Liu B, Wang Y, Ding R, Jeong SY, Woo HY, Chan PKL, Guo X. High-Performance n-Type Polymeric Mixed Ionic-Electronic Conductors: The Impacts of Halogen Functionalization. Adv Mater 2024; 36:e2305416. [PMID: 37572077 DOI: 10.1002/adma.202305416] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/06/2023] [Revised: 07/28/2023] [Indexed: 08/14/2023]
Abstract
Developing high-performance n-type polymer mixed ionic-electronic conductors (PMIECs) is a grand challenge, which largely determines their applications in vaious organic electronic devices, such as organic electrochemical transistors (OECTs) and organic thermoelectrics (OTEs). Herein, two halogen-functionalized PMIECs f-BTI2g-TVTF and f-BTI2g-TVTCl built from fused bithiophene imide dimer (f-BTI2) as the acceptor unit and halogenated thienylene-vinylene-thienylene (TVT) as the donor co-unit are reported. Compared to the control polymer f-BTI2g-TVT, the fluorinated f-BTI2g-TVTF shows lower-positioned lowest unoccupied molecular orbital (LUMO), improved charge transport property, and greater ion uptake capacity. Consequently, f-BTI2g-TVTF delivers a state-of-the-art µC* of 90.2 F cm-1 V-1 s-1 with a remarkable electron mobility of 0.41 cm2 V-1 s-1 in OECTs and an excellent power factor of 64.2 µW m-1 K-2 in OTEs. An OECT-based inverter amplifier is further demonstrated with voltage gain up to 148 V V-1 , which is among the highest values for OECT inverters. Such results shed light on the impacts of halogen atoms on developing high-performing n-type PMIECs.
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Affiliation(s)
- Wanli Yang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, 518055, China
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, 999077, China
| | - Kui Feng
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, 518055, China
- Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology (SUSTech), Shenzhen, 518055, China
| | - Suxiang Ma
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, 518055, China
| | - Bin Liu
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, 518055, China
| | - Yimei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, 518055, China
| | - Riqing Ding
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, 518055, China
| | - Sang Young Jeong
- Department of Chemistry, Korea University, Anamro 145, Seoul, 02841, Republic of Korea
| | - Han Young Woo
- Department of Chemistry, Korea University, Anamro 145, Seoul, 02841, Republic of Korea
| | - Paddy Kwok Leung Chan
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, 999077, China
- Advanced Biomedical Instrumentation Centre, Hong Kong Science and Technology Park, Shatin, Hong Kong, 999077, China
| | - Xugang Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, 518055, China
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2
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Wu W, Feng K, Wang Y, Wang J, Huang E, Li Y, Jeong SY, Woo HY, Yang K, Guo X. Selenophene Substitution Enabled High-Performance n-Type Polymeric Mixed Ionic-Electronic Conductors for Organic Electrochemical Transistors and Glucose Sensors. Adv Mater 2024; 36:e2310503. [PMID: 37961011 DOI: 10.1002/adma.202310503] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Revised: 11/06/2023] [Indexed: 11/15/2023]
Abstract
High-performance n-type polymeric mixed ionic-electronic conductors (PMIECs) are essential for realizing organic electrochemical transistors (OECTs)-based low-power complementary circuits and biosensors, but their development still remains a great challenge. Herein, by devising two novel n-type polymers (f-BTI2g-SVSCN and f-BSeI2g-SVSCN) containing varying selenophene contents together with their thiophene-based counterpart as the control, it is demonstrated that gradually increasing selenophene loading in polymer backbones can simultaneously yield lowered lowest unoccupied molecular orbital levels, boosted charge-transport properties, and improved ion-uptake capabilities. Therefore, a remarkable volumetric capacitance (C*) of 387.2 F cm-3 and a state-of-the-art OECT electron mobility (µe,OECT ) of 0.48 cm2 V-1 s-1 are synchronously achieved for f-BSeI2g-SVSCN having the highest selenophene content, yielding an unprecedented geometry-normalized transconductance (gm,norm ) of 71.4 S cm-1 and record figure of merit (µC*) value of 191.2 F cm-1 V-1 s-1 for n-type OECTs. Thanks to such excellent performance of f-BSeI2g-SVSCN-based OECTs, a glucose sensor with a remarkably low detection limit of 10 nMm and decent selectivity is further implemented, demonstrating the power of selenophene substitution strategy in enabling high-performance n-type PMIECs for biosensing applications.
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Affiliation(s)
- Wenchang Wu
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Kui Feng
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Yimei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Junwei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Enmin Huang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Yongchun Li
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Sang Young Jeong
- Department of Chemistry, Korea University, Anamro 145, Seoul, 02841, Republic of Korea
| | - Han Young Woo
- Department of Chemistry, Korea University, Anamro 145, Seoul, 02841, Republic of Korea
| | - Kun Yang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
- College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan, 410080, China
| | - Xugang Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
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3
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Feng K, Yang W, Jeong S, Ma S, Li Y, Wang J, Wang Y, Han YW, Chan PKL, Wang G, Guo X, Zhu M. Cyano-Functionalized Fused Bithiophene Imide Dimer-Based n-Type polymers for High-Performance Organic Thermoelectrics. Adv Mater 2023:e2210847. [PMID: 37120703 DOI: 10.1002/adma.202210847] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2022] [Revised: 04/13/2023] [Indexed: 06/19/2023]
Abstract
Doped n-type polymers usually exhibit low electrical conductivities and thermoelectric power factors (PFs), restricting the development of high-performance p-n junction-based organic thermoelectrics (OTEs). Herein we report the design and synthesis of a new cyano-functionalized fused bithiophene imide dimer (f-BTI2), CNI2, which synergistically combines the advantages of both cyano and imide functionalities, thus leading to substantially higher electron deficiency than the parent f-BTI2. On the basis of this novel building block, a series of n-type donor-acceptor and acceptor-acceptor polymers were successfully synthesized, all of which show good solubility, deep-lying frontier molecular orbital levels, and favorable polymer chain orientation. Among them, the acceptor-acceptor polymer PCNI2-BTI delivers an excellent electrcial conductivity up to 150.2 S cm-1 and a highest PF of 110.3 μW m-1 K-2 in n-type OTEs, attributed to the optimized polymer electronic properties and film morphology with improved molecular packing and higher crystallinity assisted by solution-shearing technology. The PF value is the record of n-type polymers for OTEs to date. This work demonstrates a facile approach to designing high-performance n-type polymers and fabricating high-quality films for OTE applications. This article is protected by copyright. All rights reserved.
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Affiliation(s)
- Kui Feng
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
- Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Wanli Yang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong
| | - Sangyoung Jeong
- Department of Chemistry, Korea University, Anamro 145, Seoul, 02841, Republic of Korea
| | - Suxiang Ma
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Yongchun Li
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Junwei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Yimei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Young Woo Han
- Department of Chemistry, Korea University, Anamro 145, Seoul, 02841, Republic of Korea
| | - Paddy Kwok Leung Chan
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong
| | - Gang Wang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Shanghai Key Laboratory of Lightweight Structural Composites, Key Laboratory of High Performance Fibers & Products, Ministry of Education, Donghua University, Shanghai, 201620, China
| | - Xugang Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Meifang Zhu
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Shanghai Key Laboratory of Lightweight Structural Composites, Key Laboratory of High Performance Fibers & Products, Ministry of Education, Donghua University, Shanghai, 201620, China
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Feng K, Shan W, Wang J, Lee JW, Yang W, Wu W, Wang Y, Kim BJ, Guo X, Guo H. Cyano-Functionalized n-Type Polymer with High Electron Mobility for High-Performance Organic Electrochemical Transistors. Adv Mater 2022; 34:e2201340. [PMID: 35429014 DOI: 10.1002/adma.202201340] [Citation(s) in RCA: 28] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
n-Type organic mixed ionic-electronic conductors (OMIECs) with high electron mobility are scarce and highly challenging to develop. As a result, the figure-of-merit (µC*) of n-type organic electrochemical transistors (OECTs) lags far behind the p-type analogs, restraining the development of OECT-based low-power complementary circuits and biosensors. Here, two n-type donor-acceptor (D-A) polymers based on fused bithiophene imide dimer f-BTI2 as the acceptor unit and thienylene-vinylene-thienylene (TVT) as the donor co-unit are reported. The cyanation of TVT enables polymer f-BTI2g-TVTCN with simultaneously enhanced ion-uptake ability, film structural order, and charge-transport property. As a result, it is able to obtain a high volumetric capacitance (C*) of 170 ± 22 F cm-3 and a record OECT electron mobility (μe,OECT ) of 0.24 cm2 V-1 s-1 for f-BTI2g-TVTCN, subsequently achieving a state-of-the-art µC* of 41.3 F cm-1 V-1 s-1 and geometry-normalized transconductance (gm,norm ) of 12.8 S cm-1 in n-type accumulation-mode OECTs. In contrast, only a moderate µC* of 1.50 F cm-1 V-1 s-1 is measured for the non-cyanated polymer f-BTI2g-TVT. These remarkable results demonstrate the great power of cyano functionalization of polymer semiconductors in developing n-type OMIECs with substantial electron mobility in aqueous environment for high-performance n-type OECTs.
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Affiliation(s)
- Kui Feng
- Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Wentao Shan
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Junwei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Jin-Woo Lee
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Wanli Yang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Wenchang Wu
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Yimei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Bumjoon J Kim
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Xugang Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Han Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
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Feng K, Shan W, Ma S, Wu Z, Chen J, Guo H, Liu B, Wang J, Li B, Woo HY, Fabiano S, Huang W, Guo X. Fused Bithiophene Imide Dimer-Based n-Type Polymers for High-Performance Organic Electrochemical Transistors. Angew Chem Int Ed Engl 2021; 60:24198-24205. [PMID: 34467624 DOI: 10.1002/anie.202109281] [Citation(s) in RCA: 34] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/12/2021] [Revised: 08/14/2021] [Indexed: 01/10/2023]
Abstract
The development of n-type organic electrochemical transistors (OECTs) lags far behind their p-type counterparts. In order to address this dilemma, we report here two new fused bithiophene imide dimer (f-BTI2)-based n-type polymers with a branched methyl end-capped glycol side chain, which exhibit good solubility, low-lying LUMO energy levels, favorable polymer chain orientation, and efficient ion transport property, thus yielding a remarkable OECT electron mobility (μe ) of up to ≈10-2 cm2 V-1 s-1 and volumetric capacitance (C*) as high as 443 F cm-3 , simultaneously. As a result, the f-BTI2TEG-FT-based OECTs deliver a record-high maximum geometry-normalized transconductance of 4.60 S cm-1 and a maximum μC* product of 15.2 F cm-1 V-1 s-1 . The μC* figure of merit is more than one order of magnitude higher than that of the state-of-the-art n-type OECTs. The emergence of f-BTI2TEG-FT brings a new paradigm for developing high-performance n-type polymers for low-power OECT applications.
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Affiliation(s)
- Kui Feng
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.,Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Wentao Shan
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.,Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Suxiang Ma
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.,Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Ziang Wu
- Department of Chemistry, Korea University, Seoul, 136-713, South Korea
| | - Jianhua Chen
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.,Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Han Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.,Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Bin Liu
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.,Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Junwei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.,Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Bangbang Li
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.,Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Han Young Woo
- Department of Chemistry, Korea University, Seoul, 136-713, South Korea
| | - Simone Fabiano
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, 60174, Norrköping, Sweden
| | - Wei Huang
- School of Automation Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, Sichuan, 611731, China
| | - Xugang Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.,Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
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Zhang Y, Tang L, Sun H, Ling S, Yang K, Uddin MA, Guo H, Tang Y, Wang Y, Feng K, Shi Y, Liu J, Zhang S, Woo HY, Guo X. Fused Bithiophene Imide Oligomer and Diketopyrrolopyrrole Copolymers for n-Type Thin-Film Transistors. Macromol Rapid Commun 2019; 40:e1900394. [PMID: 31702099 DOI: 10.1002/marc.201900394] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/04/2019] [Revised: 09/26/2019] [Indexed: 11/10/2022]
Abstract
Diketopyrrolopyrrole (DPP)-based copolymers have received considerable attention as promising semiconducting materials for high-performance organic thin-film transistors (OTFTs). However, these polymers typically exhibit p-type or ambipolar charge-transporting characteristics in OTFTs due to their high-lying highest occupied molecular orbital (HOMO) energy levels. In this work, a new series of DPP-based n-type polymers have been developed by incorporating fused bithiophene imide oligomers (BTIn) into DPP polymers. The resulting copolymers BTIn-DPP show narrow band gaps as low as 1.27 eV and gradually down-shifted frontier molecular orbital energy levels upon the increment of imide group number. Benefiting from the coplanar backbone conformation, well-delocalized π-system, and favorable polymer chain packing, the optimal polymer in the series shows promising n-type charge transport with an electron mobility up to 0.48 cm2 V-1 s-1 in OTFTs, which is among the highest values for the DPP-based n-type polymers reported to date. The results demonstrate that incorporating fused bithiophene imide oligomers into polymers can serve as a promising strategy for constructing high-performance n-type polymeric semiconductors.
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Affiliation(s)
- Yujie Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.,Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong, 518055, China
| | - Linjing Tang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong, 518055, China
| | - Huiliang Sun
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong, 518055, China
| | - Shaohua Ling
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong, 518055, China
| | - Kun Yang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong, 518055, China
| | - Mohammad Afsar Uddin
- College of Chemistry and Environment Engineering, Jiujiang University, Jiujiang, 332005, China
| | - Han Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong, 518055, China
| | - Yumin Tang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong, 518055, China
| | - Yang Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong, 518055, China
| | - Kui Feng
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong, 518055, China
| | - Yongqiang Shi
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong, 518055, China
| | - Juqing Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Shiming Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Han Young Woo
- Department of Chemistry, College of Science, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Xugang Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong, 518055, China
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7
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Feng K, Zhang X, Wu Z, Shi Y, Su M, Yang K, Wang Y, Sun H, Min J, Zhang Y, Cheng X, Woo HY, Guo X. Fluorine-Substituted Dithienylbenzodiimide-Based n-Type Polymer Semiconductors for Organic Thin-Film Transistors. ACS Appl Mater Interfaces 2019; 11:35924-35934. [PMID: 31525945 DOI: 10.1021/acsami.9b13138] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Imide functionalization is one of the most effective approaches to develop electron-deficient building blocks for constructing n-type organic semiconductors. Driven by the attractive properties of imide-functionalized dithienylbenzodiimide (TBDI) and the promising device performance of TBDI-based polymers, a novel acceptor with increased electron affinity, fluorinated dithienylbenzodiimide (TFBDI), was designed with the hydrogen replaced by fluorine on the benzene core, and the synthetic challenges associated with this highly electron-deficient fluorinated imide building block are successfully overcome. TFBDI showed suppressed frontier molecular orbital energy levels as compared with TBDI. Copolymerizing this new electron-withdrawing TBDI with various donor co-units afforded a series of n-type polymer semiconductors TFBDI-T, TFBDI-Se, and TFBDI-BSe. All these TFBDI-based polymers exhibited a lower-lying lowest unoccupied molecular orbital (LUMO) energy level than the polymer analogue without fluorine. When applied in organic thin-film transistors, three polymers showed unipolar electron transport with large on-current/off-current ratios (Ion/Ioff) of 105-107. Among them, the selenophene-based polymer TFBDI-Se with the deepest-positioned LUMO and optimal chain stacking exhibited the highest electron mobility of 0.30 cm2 V-1 s-1. This result demonstrates that the new TFBDI is a highly attractive electron-deficient unit for enabling n-type polymer semiconductors, and the fluorination of imide-functionalized arenes offers an effective approach to develop more electron-deficient building blocks in organic electronics.
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Affiliation(s)
- Kui Feng
- Department of Materials Science and Engineering and The Shenzhen Key Laboratory for Printed Organic Electronics , Southern University of Science and Technology (SUSTech) , No. 1088, Xueyuan Road , Shenzhen 518055 , Guangdong , China
- The Institute for Advanced Studies , Wuhan University , Wuhan 430072 , China
| | - Xianhe Zhang
- Department of Materials Science and Engineering and The Shenzhen Key Laboratory for Printed Organic Electronics , Southern University of Science and Technology (SUSTech) , No. 1088, Xueyuan Road , Shenzhen 518055 , Guangdong , China
| | - Ziang Wu
- Department of Chemistry , Korea University , Seoul 136-713 , South Korea
| | - Yongqiang Shi
- Department of Materials Science and Engineering and The Shenzhen Key Laboratory for Printed Organic Electronics , Southern University of Science and Technology (SUSTech) , No. 1088, Xueyuan Road , Shenzhen 518055 , Guangdong , China
| | - Mengyao Su
- Department of Materials Science and Engineering and The Shenzhen Key Laboratory for Printed Organic Electronics , Southern University of Science and Technology (SUSTech) , No. 1088, Xueyuan Road , Shenzhen 518055 , Guangdong , China
| | - Kun Yang
- Department of Materials Science and Engineering and The Shenzhen Key Laboratory for Printed Organic Electronics , Southern University of Science and Technology (SUSTech) , No. 1088, Xueyuan Road , Shenzhen 518055 , Guangdong , China
| | - Yang Wang
- Department of Materials Science and Engineering and The Shenzhen Key Laboratory for Printed Organic Electronics , Southern University of Science and Technology (SUSTech) , No. 1088, Xueyuan Road , Shenzhen 518055 , Guangdong , China
| | - Huiliang Sun
- Department of Materials Science and Engineering and The Shenzhen Key Laboratory for Printed Organic Electronics , Southern University of Science and Technology (SUSTech) , No. 1088, Xueyuan Road , Shenzhen 518055 , Guangdong , China
| | - Jie Min
- The Institute for Advanced Studies , Wuhan University , Wuhan 430072 , China
| | - Yujie Zhang
- Department of Materials Science and Engineering and The Shenzhen Key Laboratory for Printed Organic Electronics , Southern University of Science and Technology (SUSTech) , No. 1088, Xueyuan Road , Shenzhen 518055 , Guangdong , China
| | - Xing Cheng
- Department of Materials Science and Engineering and The Shenzhen Key Laboratory for Printed Organic Electronics , Southern University of Science and Technology (SUSTech) , No. 1088, Xueyuan Road , Shenzhen 518055 , Guangdong , China
| | - Han Young Woo
- Department of Chemistry , Korea University , Seoul 136-713 , South Korea
| | - Xugang Guo
- Department of Materials Science and Engineering and The Shenzhen Key Laboratory for Printed Organic Electronics , Southern University of Science and Technology (SUSTech) , No. 1088, Xueyuan Road , Shenzhen 518055 , Guangdong , China
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Shi Y, Guo H, Qin M, Zhao J, Wang Y, Wang H, Wang Y, Facchetti A, Lu X, Guo X. Thiazole Imide-Based All-Acceptor Homopolymer: Achieving High-Performance Unipolar Electron Transport in Organic Thin-Film Transistors. Adv Mater 2018; 30:1705745. [PMID: 29337389 DOI: 10.1002/adma.201705745] [Citation(s) in RCA: 82] [Impact Index Per Article: 13.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2017] [Revised: 12/11/2017] [Indexed: 06/07/2023]
Abstract
High-performance unipolar n-type polymer semiconductors are critical for advancing the field of organic electronics, which relies on the design and synthesis of new electron-deficient building blocks with good solubilizing capability, favorable geometry, and optimized electrical properties. Herein, two novel imide-functionalized thiazoles, 5,5'-bithiazole-4,4'-dicarboxyimide (BTzI) and 2,2'-bithiazolothienyl-4,4',10,10'-tetracarboxydiimide (DTzTI), are successfully synthesized. Single crystal analysis and physicochemical study reveal that DTzTI is an excellent building block for constructing all-acceptor homopolymers, and the resulting polymer poly(2,2'-bithiazolothienyl-4,4',10,10'-tetracarboxydiimide) (PDTzTI) exhibits unipolar n-type transport with a remarkable electron mobility (μe ) of 1.61 cm2 V-1 s-1 , low off-currents (Ioff ) of 10-10 -10-11 A, and substantial current on/off ratios (Ion /Ioff ) of 107 -108 in organic thin-film transistors. The all-acceptor homopolymer shows distinctive advantages over prevailing n-type donor-acceptor copolymers, which suffer from ambipolar transport with high Ioff s > 10-8 A and small Ion /Ioff s < 105 . The results demonstrate that the all-acceptor approach is superior to the donor-acceptor one, which results in unipolar electron transport with more ideal transistor performance characteristics.
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Affiliation(s)
- Yongqiang Shi
- Department of Materials Science and Engineering and The Shenzhen Key Laboratory for Printed Organic Electronics, South University of Science and Technology of China (SUSTC), No. 1088, Xueyuan Road, Shenzhen, Guangdong, 518055, China
| | - Han Guo
- Department of Materials Science and Engineering and The Shenzhen Key Laboratory for Printed Organic Electronics, South University of Science and Technology of China (SUSTC), No. 1088, Xueyuan Road, Shenzhen, Guangdong, 518055, China
| | - Minchao Qin
- Department of Physics, The Chinese University of Hong Kong, New Territories, 999077, Hong Kong
| | - Jiuyang Zhao
- Department of Materials Science and Engineering and The Shenzhen Key Laboratory for Printed Organic Electronics, South University of Science and Technology of China (SUSTC), No. 1088, Xueyuan Road, Shenzhen, Guangdong, 518055, China
| | - Yuxi Wang
- Department of Materials Science and Engineering and The Shenzhen Key Laboratory for Printed Organic Electronics, South University of Science and Technology of China (SUSTC), No. 1088, Xueyuan Road, Shenzhen, Guangdong, 518055, China
| | - Hang Wang
- Department of Materials Science and Engineering and The Shenzhen Key Laboratory for Printed Organic Electronics, South University of Science and Technology of China (SUSTC), No. 1088, Xueyuan Road, Shenzhen, Guangdong, 518055, China
| | - Yulun Wang
- Department of Materials Science and Engineering and The Shenzhen Key Laboratory for Printed Organic Electronics, South University of Science and Technology of China (SUSTC), No. 1088, Xueyuan Road, Shenzhen, Guangdong, 518055, China
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Xinhui Lu
- Department of Physics, The Chinese University of Hong Kong, New Territories, 999077, Hong Kong
| | - Xugang Guo
- Department of Materials Science and Engineering and The Shenzhen Key Laboratory for Printed Organic Electronics, South University of Science and Technology of China (SUSTC), No. 1088, Xueyuan Road, Shenzhen, Guangdong, 518055, China
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