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Hu J, Zheng S, Xu J, Feng R, Li T, Wang T, Zhang W, Liu W, Saleem F. Innovative Synthesis of Au Nanoparticle-Trapped Flexible Macrocrystals: Achieving Stable Black Crystal Wires with Broadband Absorption. SMALL METHODS 2024:e2400871. [PMID: 39155822 DOI: 10.1002/smtd.202400871] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2024] [Revised: 08/06/2024] [Indexed: 08/20/2024]
Abstract
In optical materials, the development of absorbers for a wide spectrum is a focal point of research. A pivotal challenge lies in ensuring the stability and durability of optical absorbers, particularly at elevated temperatures. This study introduces a novel approach to creating absorbers with diverse colors, focusing on the synthesis and properties of black crystal wires. In contrast to black gold nanoparticle (Au NP) precipitates, which change color within hours under similar conditions, the method involves strategically trapping Au NPs within defects during the growth of single crystals. This results in black crystal wires that not only exhibit broadband absorption but also maintain exceptional stability even under prolonged exposure to high temperatures. The method also involves the controlled synthesis of colorless and red crystal wires. As a proof of concept, these stable black Au crystal wires demonstrate superior performance in photothermal conversion applications. The methodology, derived from the crystal growth process, presents a defect template that offers a novel approach to material design. Furthermore, these unique crystals, available in various colors, hold significant promise for a range of unexplored applications.
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Affiliation(s)
- Jiuyi Hu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, P. R. China
| | - Shaohui Zheng
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, P. R. China
| | - Jiayu Xu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, P. R. China
| | - Ri Feng
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, P. R. China
| | - Tingting Li
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, P. R. China
| | - Ting Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, P. R. China
| | - Weina Zhang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, P. R. China
| | - Wenjing Liu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, P. R. China
| | - Faisal Saleem
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, P. R. China
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Wu LK, Feng Y, Zou QH, Jiang LL, Wang ZJ, Wang N, Ye HY, Li JR. Gas-Liquid Interface Route to Hybrid Copper Bromine Perovskite Single-Crystal Membrane with Dielectric Transitions and Ferromagnetic Exchanges. Inorg Chem 2024; 63:6972-6979. [PMID: 38567571 DOI: 10.1021/acs.inorgchem.4c00502] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Single-crystal membranes (SCMs) show great promise in the fields of sensors, light-emitting diodes, and photodetection. However, the growth of a large-area single-crystal membranes is challenging. We report a new organic-inorganic SCMs [HCMA]2CuBr4 (HCMA = cyclohexanemethylamine) crystallized at the gas-liquid interface. It also has low-temperature ferromagnetic order, high-temperature dielectric anomalies, and narrow band gap indirect semiconductor properties. Specifically, the reversible phase transition of the compound occurs at 350/341 K on cooling/heating and exhibits dielectric anomalies and stable switching performance near the phase transition temperature. The ferromagnetic exchange interaction in the inorganic octahedra and the organic layer enables ferromagnetic ordering at low-temperature 10 K. Finally, the single crystal exhibits an indirect semiconducting property with a narrow band gap of 0.99 eV. Such rich multichannel physical properties make it a potential application in photodetection, information storage and sensors.
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Affiliation(s)
- Ling-Kun Wu
- Chaotic Matter Science Research Center, International Institute for Innovation, Jiangxi University of Science and Technology, Ganzhou 341000, P. R. China
| | - Yan Feng
- Chaotic Matter Science Research Center, International Institute for Innovation, Jiangxi University of Science and Technology, Ganzhou 341000, P. R. China
| | - Qing-Hua Zou
- Chaotic Matter Science Research Center, International Institute for Innovation, Jiangxi University of Science and Technology, Ganzhou 341000, P. R. China
| | - Lu-Lu Jiang
- Chaotic Matter Science Research Center, International Institute for Innovation, Jiangxi University of Science and Technology, Ganzhou 341000, P. R. China
| | - Ze-Jie Wang
- Chaotic Matter Science Research Center, International Institute for Innovation, Jiangxi University of Science and Technology, Ganzhou 341000, P. R. China
| | - Na Wang
- Chaotic Matter Science Research Center, International Institute for Innovation, Jiangxi University of Science and Technology, Ganzhou 341000, P. R. China
| | - Heng-Yun Ye
- Chaotic Matter Science Research Center, International Institute for Innovation, Jiangxi University of Science and Technology, Ganzhou 341000, P. R. China
| | - Jian-Rong Li
- Chaotic Matter Science Research Center, International Institute for Innovation, Jiangxi University of Science and Technology, Ganzhou 341000, P. R. China
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Yoo MS, Byun KE, Lee H, Lee MH, Kwon J, Kim SW, Jeong U, Seol M. Ultraclean Interface of Metal Chalcogenides with Metal through Confined Interfacial Chalcogenization. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310282. [PMID: 38190458 DOI: 10.1002/adma.202310282] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Revised: 12/07/2023] [Indexed: 01/10/2024]
Abstract
Acquisition of defect-free transition metal dichalcogenides (TMDs) channels with clean heterojunctions is a critical issue in the production of TMD-based functional electronic devices. Conventional approaches have transferred TMD onto a target substrate, and then apply the typical device fabrication processes. Unfortunately, those processes cause physical and chemical defects in the TMD channels. Here, a novel synthetic process of TMD thin films, named confined interfacial chalcogenization (CIC) is proposed. In the proposed synthesis, a uniform TMDlayer is created at the Au/transition metal (TM) interface by diffusion of chalcogen through the upper Au layer and the reaction of chalcogen with the underlying TM. CIC allows for ultraclean heterojunctions with the metals, synthesis of various homo- and hetero-structured TMDs, and in situ TMD channel formation in the last stage of device fabrication. The mechanism of TMD growth is revealed by the TM-accelerated chalcogen diffusion, epitaxial growth of TMD on Au(111). We demonstrated a wafer-scale TMD-based vertical memristors which exhibit excellent statistical concordance in device performance enabled by the ultraclean heterojunctions and superior uniformity in thickness. CIC proposed in this study represents a breakthrough in in TMD-based electronic device fabrication and marking a substantial step toward practical next-generation integrated electronics.
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Affiliation(s)
- Min Seok Yoo
- 2D Device Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Kyung-Eun Byun
- 2D Device Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Hyangsook Lee
- Analytical Science Laboratory, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Min-Hyun Lee
- Thin film Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Junyoung Kwon
- 2D Device Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Sang Won Kim
- 2D Device Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro Nam-Gu, Pohang, 37673, Republic of Korea
| | - Minsu Seol
- 2D Device Technical Unit, Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
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Gautam C, Thakurta B, Pal M, Ghosh AK, Giri A. Wafer scale growth of single crystal two-dimensional van der Waals materials. NANOSCALE 2024; 16:5941-5959. [PMID: 38445855 DOI: 10.1039/d3nr06678a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/07/2024]
Abstract
Two-dimensional (2D) van der Waals (vdW) materials, including graphene, hexagonal boron nitride (hBN), and metal dichalcogenides (MCs), form the basis of modern electronics and optoelectronics due to their unique electronic structure, chemical activity, and mechanical strength. Despite many proof-of-concept demonstrations so far, to fully realize their large-scale practical applications, especially in devices, wafer-scale single crystal atomically thin highly uniform films are indispensable. In this minireview, we present an overview on the strategies and highlight recent significant advances toward the synthesis of wafer-scale single crystal graphene, hBN, and MC 2D thin films. Currently, there are five distinct routes to synthesize wafer-scale single crystal 2D vdW thin films: (i) nucleation-controlled growth by suppressing the nucleation density, (ii) unidirectional alignment of multiple epitaxial nuclei and their seamless coalescence, (iii) self-collimation of randomly oriented grains on a molten metal, (iv) surface diffusion and epitaxial self-planarization and (v) seed-mediated 2D vertical epitaxy. Finally, the challenges that need to be addressed in future studies have also been described.
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Affiliation(s)
- Chetna Gautam
- Department of Physics, Institute of Science, Banaras Hindu University, Varanasi, UP - 221005, India.
| | - Baishali Thakurta
- Department of Chemistry, Institute of Science, Banaras Hindu University, Varanasi, UP - 221005, India
| | - Monalisa Pal
- Department of Chemistry, Institute of Science, Banaras Hindu University, Varanasi, UP - 221005, India
| | - Anup Kumar Ghosh
- Department of Physics, Institute of Science, Banaras Hindu University, Varanasi, UP - 221005, India.
| | - Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
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Liu Y, Liu X, Zhang T, He H. Understanding Flow Fouling Deposition and Solute Hideout-Return Behavior at the Phase Change Interface. ACS APPLIED MATERIALS & INTERFACES 2024; 16:4719-4728. [PMID: 38252811 DOI: 10.1021/acsami.3c16345] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/24/2024]
Abstract
Nuclear energy is a competitive green energy, yet corrosion deposition and boron hideout on pressurized water reactor fuel cladding surfaces could cause localized corrosion and power shift, resulting in huge safety and economic risks. Alleviation of these problems requires the understanding of the corrosion deposition mechanism and related boron behavior. In this study, we explore corrosion product deposition in typical fuel assembly channels under subcooled boiling conditions and propose a boron hideout and return mechanism to explain the reason for the failure of the power reduction inhibiting a power shift. Porous corrosion depositions with the same morphology and thickness as the real depositions in a fuel cycle are obtained in a week via the accelerated deposition method simulating a real subcooled boiling and water chemical environment. Stronger subcooled boiling generates more bubbles, resulting in higher supersaturation of corrosion products at the gas-liquid interface. The corresponding precipitated stable crystals are smaller, and the formed deposition layer is looser and thicker with smaller particles. On the basis of the above characterizations, the effect of subcooled boiling, solute concentration, and water chemistry on the corrosion deposition mechanism is revealed. High-resolution characterization methods indicate that boron hides within the depositions mainly in the form of H3BO3 and Li2B4O7. The boron coolant concentration increases by 307.9 ppm after power reduction, confirming the return behavior of porous hidden boron. Hidden boron return behavior brings potential challenges for estimating critical conditions and plant response operations. The results of this study provide a precise method for understanding the corrosion product deposition and boron hideout-return behavior to further develop mitigation strategies for power shift and localized corrosion security issues.
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Affiliation(s)
- Yan Liu
- School of Mechanical Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China
| | - Xiaojing Liu
- School of Mechanical Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China
| | - Tengfei Zhang
- School of Mechanical Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China
| | - Hui He
- School of Mechanical Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China
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Zhang J, Lin T, Wang A, Wang X, He Q, Ye H, Lu J, Wang Q, Liang Z, Jin F, Chen S, Fan M, Guo EJ, Zhang Q, Gu L, Luo Z, Si L, Wu W, Wang L. Super-tetragonal Sr 4Al 2O 7 as a sacrificial layer for high-integrity freestanding oxide membranes. Science 2024; 383:388-394. [PMID: 38271502 DOI: 10.1126/science.adi6620] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 12/13/2023] [Indexed: 01/27/2024]
Abstract
Identifying a suitable water-soluble sacrificial layer is crucial to fabricating large-scale freestanding oxide membranes, which offer attractive functionalities and integrations with advanced semiconductor technologies. Here, we introduce a water-soluble sacrificial layer, "super-tetragonal" Sr4Al2O7 (SAOT). The low-symmetric crystal structure enables a superior capability to sustain epitaxial strain, allowing for broad tunability in lattice constants. The resultant structural coherency and defect-free interface in perovskite ABO3/SAOT heterostructures effectively restrain crack formation during the water release of freestanding oxide membranes. For a variety of nonferroelectric oxide membranes, the crack-free areas can span up to a millimeter in scale. This compelling feature, combined with the inherent high water solubility, makes SAOT a versatile and feasible sacrificial layer for producing high-quality freestanding oxide membranes, thereby boosting their potential for innovative device applications.
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Affiliation(s)
- Jinfeng Zhang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Ting Lin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Ao Wang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Xiaochao Wang
- School of Physics, Northwest University, Xi'an 710127, China
| | - Qingyu He
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Huan Ye
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Jingdi Lu
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Qing Wang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Zhengguo Liang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Feng Jin
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Shengru Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Minghui Fan
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Zhenlin Luo
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Liang Si
- School of Physics, Northwest University, Xi'an 710127, China
- Institut für Festkörperphysik, TU Wien, 1040 Vienna, Austria
| | - Wenbin Wu
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Lingfei Wang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
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Lee G, Jang S, Kim YB, Cho D, Jeong D, Chae S, Myoung JM, Kim H, Kim SK, Lee JO. Ultrathin Metal Film on Graphene for Percolation-Threshold-Limited Thermal Emissivity Control. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2301227. [PMID: 37200230 DOI: 10.1002/adma.202301227] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/08/2023] [Revised: 05/12/2023] [Indexed: 05/20/2023]
Abstract
Translucent Au/graphene hybrid films are shown to be effective in reducing thermal emission from the underlying surfaces when the deposition thickness of Au is close to the percolation threshold. The critical Au deposition thickness for an abrupt change in emissivity is reduced from 15 nm (Si substrate) to a percolation-threshold-limited thickness of 8.5 nm (graphene/Si substrate) because of the chemical inertness of graphene leading to the deposited Au atoms forming a thin, crystalline layer. The effect of the graphene layer on the optical properties of the hybrid film is highlighted by a drastic increase in infrared absorptivity, whereas the visible absorptivity is marginally affected by the presence of a graphene layer. The level of thermal emission from the Au/graphene hybrid films with the percolation-threshold-limited Au thickness is stable even with high background temperatures of up to 300 °C and mechanical strains of ≈4%. As an example of a thermal management application, an anti-counterfeiting device is demonstrated; thermal-camouflage-masked text fabricated with an Au/graphene hybrid film is discernible only using a thermographic camera. Ultrathin metal film assisted by a graphene layer will provide a facile platform for thermal management with semi-transparency, flexibility, and transferability to arbitrary surfaces.
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Affiliation(s)
- Geonhee Lee
- Advanced Materials Division, Korea Research Institute of Chemical Technology, Gajeong-ro 141, Daejeon, 34114, Republic of Korea
| | - Sojeong Jang
- Advanced Materials Division, Korea Research Institute of Chemical Technology, Gajeong-ro 141, Daejeon, 34114, Republic of Korea
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Young-Bin Kim
- Department of Applied Physics, Kyung Hee University, 1732 Deogyeong-daero, Yongin-si, Gyeonggi-do, 17104, Republic of Korea
| | - Donghwi Cho
- Advanced Materials Division, Korea Research Institute of Chemical Technology, Gajeong-ro 141, Daejeon, 34114, Republic of Korea
| | - Duwon Jeong
- Department of Physics, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do, 16419, Republic of Korea
| | - Soosang Chae
- Advanced Materials Division, Korea Research Institute of Chemical Technology, Gajeong-ro 141, Daejeon, 34114, Republic of Korea
| | - Jae-Min Myoung
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Hyunwoo Kim
- Drug Discovery Platform Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Republic of Korea
| | - Sun-Kyung Kim
- Department of Applied Physics, Kyung Hee University, 1732 Deogyeong-daero, Yongin-si, Gyeonggi-do, 17104, Republic of Korea
| | - Jeong-O Lee
- Advanced Materials Division, Korea Research Institute of Chemical Technology, Gajeong-ro 141, Daejeon, 34114, Republic of Korea
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Li X, Yang J, Sun H, Huang L, Li H, Shi J. Controlled Synthesis and Accurate Doping of Wafer-Scale 2D Semiconducting Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305115. [PMID: 37406665 DOI: 10.1002/adma.202305115] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Revised: 06/24/2023] [Accepted: 07/04/2023] [Indexed: 07/07/2023]
Abstract
2D semiconducting transition metal dichalcogenide (TMDCs) possess atomically thin thickness, a dangling-bond-free surface, flexible band structure, and silicon-compatible feature, making them one of the most promising channels for constructing state-of-the-art field-effect transistors in the post-Moore's era. However, the existing 2D semiconducting TMDCs fall short of meeting the industry criteria for practical applications in electronics due to their small domain size and the lack of an effective approach to modulate intrinsic physical properties. Therefore, it is crucial to prepare and dope 2D semiconducting TMDCs single crystals with wafer size. In this review, the up-to-date progress regarding the wafer-scale growth of 2D semiconducting TMDC polycrystalline and single-crystal films is systematically summarized. The domain orientation control of 2D TMDCs and the seamless stitching of unidirectionally aligned 2D islands by means of substrate design are proposed. In addition, the accurate and uniform doping of 2D semiconducting TMDCs and the effect on electronic device performances are also discussed. Finally, the dominating challenges pertaining to the enhancement of the electronic device performances of TMDCs are emphasized, and further development directions are put forward. This review provides a systematic and in-depth summary of high-performance device applications of 2D semiconducting TMDCs.
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Affiliation(s)
- Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Hang Sun
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Ling Huang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
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