Buried Interface Dielectric Layer Engineering for Highly Efficient and Stable Inverted Perovskite Solar Cells and Modules

Effect of Hole Extraction Layer on the Composition of Thermally Evaporated Formamidinium-Based Mixed Halide Perovskites

In the quest for optimizing the stability and efficiency of perovskite-based devices, the preparation and composition of the perovskite layer as well as the choice of adjacent charge extraction layers play a crucial role. While most commonly solution processing is used to produce the perovskite films, thermal evaporation is emerging as an important alternative, in particular, with respect to future commercialization. This study investigates the film crystallinity as well as film composition of the thermally evaporated mixed halide perovskite FAPbI1Br2 on different hole extraction layers (HELs). Despite using PbBr2 as the bromide source, measurements by X-ray diffraction and photoelectron spectroscopy reveal that significant bromide losses can occur at the interface, depending on the choice of HEL. Our results indicate that this preferential loss of bromide is linked to the strong affinity of iodide to bind to the metal oxide surfaces as well as the phosphonic and sulfonic acid moieties of some of the chosen HELs. Notably, interfacial layers that work well for solution-processed films, such as self-assembled monolayers, turned out to be the most problematic for the formation and crystallinity of the mixed halide perovskite when thermal evaporation is employed. Additionally, we are able to show that the insertion of a thin layer of PbI2 at the interface to the HEL can, in some cases, hinder this formation of volatile Br components by suppressing the formation of iodide surface bonds, thereby stabilizing the bromide content and improving the mixed halide film formation. These findings underscore the importance of substrate selection and passivation in achieving chemically inert interfaces, which is necessary for the formation of absorber films of high crystallinity with the desired halide composition.

Crystallization Thermodynamics Regulation of 1.85 eV Wide-Bandgap Perovskite for Efficient and Stable Perovskite-Organic Tandem Photovoltaics

Wide-band gap perovskite with adjustable band gaps can be integrated with organic solar cells to form tandem solar cells (TSCs), thereby surpassing the Shockley-Queisser limit. However, increasing Br content to elevate the band gap above 1.8 eV complicates crystallization, leading to inferior film quality and defects due to the unmanageable evolution of intermediate phases. Surface passivation improves crystallization but hard to moderate the inhomogeneous component distributions and defects in the bulk phase. Here, we introduce a diammonium salt as an additive to regulate the homogeneity and crystallization of perovskite film, eliminating the low-dimensional intermediate phase for orientated crystallization of 1.85 eV perovskite, resulting in efficient wide-band gap perovskite solar cells with an impressive open-circuit voltage (Voc) of 1.379 V and operational stability remaining 85 % of their initial efficiency after illumination for 1200 h. Furthermore, perovskite-organic TSCs achieve a champion power conversion efficiency of 24.03 % and a high Voc of 2.108 V, one of the highest Voc for perovskite-organic TSCs.

Buried Interface Engineering for MAPbI3 Perovskite Solar Cells by the Novel Carbon Nitride Synergistic Strategy

Carrier recombination, which arises from defects present at both the buried interface and throughout the bulk phase, hinders performance improvement in perovskite solar cells (PSCs). Nonetheless, the current strategies still face some pressing issues. Herein, we demonstrate a novel synergistic strategy of carbon nitride (C3N3) as a buried modified layer and a perovskite antisolvent additive to reduce energy loss resulting from nonradiative recombination. C3N3 functions serve as an interfacial modification layer that enhances electron mobility, improves interface contacts, and matches energy levels between SnO2 and perovskite. Meanwhile, C3N3 acts as an antisolvent additive in the perovskite layer, reducing defect density and modulating the energy level, which boosts both the efficiency and moisture stability of PSCs. Consequently, the target devices achieve a remarkable power conversion efficiency of 21.43%, with unencapsulated devices retaining 90% of their initial value after operating 1000 h. These integrated strategies provide a promising method for simultaneously reducing interfacial and bulk defects, with potential application in other photoelectronic devices.

Enhanced Buried Interface Engineering for Efficient Inverted Perovskite Solar Cells Fabricated via Vapor-Solid Reaction

Vapor-deposited inverted perovskite solar cells utilizing self-assembled monolayer (SAM) as hole transport material have gained significant attention for their high efficiencies and compatibility with silicon/perovskite monolithic tandem devices. However, as a small molecule, the SAM layer suffers low thermal tolerance in comparison with other metal oxide or polymers, rendering poor efficiency in solar device with high-temperature (> 160 °C) fabricating procedures. In this study, a dual modification approach involving AlOx and F-doped phenyltrimethylammonium bromide (F-PTABr) layers is introduced to enhance the buried interface. The AlOx dielectric layer improves the interface contact and prevents the upward diffusion of SAM molecules during the vapor-solid reaction at 170 °C, while the F-PTABr layer regulates crystal growth and reduces the interfacial defects. As a result, the AlOx/F-PTABr-treated perovskite film exhibits a homogeneous, pinhole-free morphology with improved crystal quality compared to the control films. This leads to a champion power conversion efficiency of 21.53% for the inverted perovskite solar cells. Moreover, the encapsulated devices maintained 90% of the initial efficiency after 600 h of ageing at 85 °C in air, demonstrating promising potential for silicon/perovskite tandem application.

Molecular Design of Hole-Collecting Materials for Co-Deposition Processed Perovskite Solar Cells: A Tripodal Triazatruxene Derivative with Carboxylic Acid Groups

High-performance and cost-effective hole-collecting materials (HCMs) are indispensable for commercially viable perovskite solar cells (PSCs). Here, we report an anchorable HCM composed of a triazatruxene core connected with three alkyl carboxylic acid groups (3CATAT-C3). In contrast to the phosphonic acid-containing tripodal analog (3PATAT-C3), 3CATAT-C3 molecules can form a hydrophilic monolayer on a transparent conducting oxide surface, which is beneficial for subsequent perovskite film deposition in the traditional layer-by-layer fabrication process. More importantly, the larger diffusion coefficient and higher surface energy make 3CATAT-C3 suitable for the simplified, cost-effective one-step co-deposition process in which 3CATAT-C3 was directly added as part of the perovskite precursor solution. 3CATAT-C3 is predominantly located at the perovskite bottom surface after spin-coating the mixed precursor solution, facilitating charge extraction. Devices with 3CATAT-C3 fabricated by this co-deposition method exhibit superior performance with a champion power conversion efficiency of over 23%. The unencapsulated devices showed good operational stability (retaining 90% of the initial output after 100 h), thermal durability (retaining 95% of the initial value after heating at 105 °C under air), and excellent storage stability (showing no drop in performance over 8000 h). Based on the results of time-of-flight secondary-ion mass spectroscopy (ToF-SIMS) and diffusion order nuclear magnetic resonance spectroscopy (DOSY), we elucidated the effect of anchoring groups on the performance of the tripodal HCMs in PSCs as well as the mechanism of the co-deposition fabrication process. Our findings provide valuable insights for the molecular design of multifunctional hole-collecting materials, further advancing the performance of perovskite solar cells.

Methylammonium-Free Ink for Blade-Coating of Pure-Phase α-FAPbI3 Perovskite Films in Air

The α-c (α-FAPbI3) has been extensively employed in the fabrication of high-efficiency perovskite solar cells, yet heavily relied on multiple additives in upscalable fabrication in air. In this work, a simple α-FAPbI3 ink is developed for the blade-coating fabrication of phase-pure α-FAPbI3 in ambient air free from any additives containing extrinsic ions. The introduction of 2-imidazolidinone (IMD) to the FAPbI3 precursor inks leads to the formation of intermediate phases that change the phase transition pathway from δ-FAPbI3 to α-FAPbI3 by tilting the PbI6 octahedrons with strong coordination to Pb2+. Furthermore, the IMD ligands in the intermediate phase gradually escape from the perovskite film during the annealing, leaving a phase-pure α-FAPbI3 film vertically grown with large grains. Consequently, the small-sized PSCs fabricated with blade-coated α-FAPbI3 film achieve an efficiency of up to 23.14%, and the corresponding mini-module yields an efficiency of 19.66%. The device performance is among the highest reported for phase-pure α-FAPbI3 PSCs fabricated in the air without non-native cations or chloride additives, offering a simple and robust fabrication approach of phase-pure α-FAPbI3 films for PV application.

Recent progress of buried interface in high-efficiency and stable perovskite solar cells

Perovskite solar cells (PSCs) have been rapidly developed in recent years due to their excellent photovoltaic performance, which has been actively promoted by many researchers. However, interfacial non-radiative compounding hinders further improvement of their device performance. Buried interface modification strategies can minimize the non-radiative compounding within the interface, resulting in highly efficient and stable PSCs. In this review, we summarize the recent advances in the development of multiple classes of materials applied to buried interface engineering for the preparation of highly efficient and stable PSCs, including the development of organic, inorganic, and polymeric materials. The important role of buried interfaces in regulating energy alignment, passivating surface defects, modulating morphology, etc. have been discussed. Furthermore, we propose strategies to reduce nonradiative composites at interfaces. Finally, potential developments and challenges of buried interfaces for high performance stabilized PSCs are presented.

Lead Iodide Redistribution Enables In Situ Passivation for Blading Inverted Perovskite Solar Cells with 24.5% Efficiency

Blade-coating stands out as an alternative for fabricating scalable perovskite solar cells. However, it demands special control of the precursor composition regarding nucleation and crystallization and currently exhibits lower performance than the spin-coating process. It is mainly the resulting film morphology and excess lead iodide (PbI2) distribution that influences the optoelectronic properties. Here, the effectiveness of introducing N-Methyl-2-pyrrolidone (NMP) to regulate the structure of the perovskite layer and the redistribution of PbI2 is found. The introduction of NMP leads to the accumulation of excess PbI2, mainly on the top surface, reducing residual PbI2 at the perovskite buried interface. This not only facilitates the passivation of perovskite grain boundaries but also eliminates the potential degradation of the PbI2 triggered by light illumination in the perovskite buried interface. The optimized NMP-modified inverted perovskite solar cell achieves a champion efficiency of 24.5%, among the highest reported blade-coated perovskite solar cells. Furthermore, 13.68 cm2 blading perovskite solar modules are fabricated and demonstrate an efficiency of up to 20.4%. These findings underscore that with proper modulation of precursor composition, blade-coating can be a feasible and superior alternative for manufacturing high-quality perovskite films, paving the way for their large-scale applications in photovoltaic technology.

Multifunctional Acetaminophen Interlayer for High Efficiency and Durability Lead-Lean Perovskite Solar Cells

Due to the easy oxidation of Sn2+, which leads to form tin vacancy defects and poor perovskite film quality, caused by the rapid crystallization rate in tin-based perovskite solar cells (PSCs), their efficiency lags far behind that of lead-based PSCs. To improve the photovoltaic (PV) performance and stability of FA0.9PEA0.1SnI3-based PSCs (T-PSCs), a small amount of Pb(SCN)2 is introduced into a perovskite precursor as an antioxidant, and acetaminophen (ACE) with various functional groups is used to modify a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/perovskite interface. The results show that the Pb(SCN)2 additive and ACE interfacial modification can not only optimize energy level alignment in T-PSCs but also inhibit Sn2+ oxidation to reduce the trap-state density, resulting in promoted carrier transport. The synergetic effect of the Pb(SCN)2 antioxidant and ACE interfacial modification significantly reduces nonradiative recombination and improves the PV performance and stability of T-PSCs. Consequently, the unsealed T-PSCs with the Pb(SCN)2 additive and ACE modification achieve a champion efficiency of 12.04% and maintain 99% of their initial PCE after being stored in N2 for more than 2100 h, while reference T-PSCs demonstrate a champion PCE of 6.20% and retain only 72% of its initial PCE. Moreover, the modified T-PSCs without encapsulation demonstrate much better stability in humid air.

Bilateral Chemical Linking at NiOx Buried Interface Enables Efficient and Stable Inverted Perovskite Solar Cells and Modules

Inverted NiOx-based perovskite solar cells (PSCs) exhibit considerable potential because of their low-temperature processing and outstanding excellent stability, while is challenged by the carriers transfer at buried interface owing to the inherent low carrier mobility and abundant surface defects that directly deteriorates the overall device fill factor. Present work demonstrates a chemical linker with the capability of simultaneously grasping NiOx and perovskite crystals by forming a Ni-S-Pb bridge at buried interface to significantly boost the carriers transfer, based on a rationally selected molecule of 1,3-dimethyl-benzoimidazol-2-thione (NCS). The constructed buried interface not only reduces the pinholes and needle-like residual PbI2 at the buried interface, but also deepens the work function and valence band maximum positions of NiOx, resulting in a smaller VBM offset between NiOx and perovskite film. Consequently, the modulated PSCs achieved a high fill factor up to 86.24 %, which is as far as we know the highest value in records of NiOx-based inverted PSCs. The NCS custom-tailored PSCs and minimodules (active area of 18 cm2) exhibited a champion efficiency of 25.05 % and 21.16 %, respectively. The unencapsulated devices remains over 90 % of their initial efficiency at maximum power point under continuous illumination for 1700 hours.

Suppressing interfacial nucleation competition through supersaturation regulation for enhanced perovskite film quality and scalability

The growing interest in cost-effective and high-performing perovskite solar cells (PSCs) has driven extensive research. However, the challenge lies in upscaling PSCs while maintaining high performance. This study focuses on achieving uniform and compact perovskite films without pinholes and interfacial voids during upscaling from small PSCs to large-area modules. Competition in nucleation at concavities with various angles on rough-textured substrates during the gas-pumping drying process, coupled with different drying rates across the expansive film, aggravates these issues. Consequently, substrate roughness notably influences the deposition window of compact large-area perovskite films. We propose a supersaturation regulation approach aimed at achieving compact deposition of high-quality perovskite films over large areas. This involves introducing a rapid drying strategy to induce a high-supersaturation state, thereby equalizing nucleation across diverse concavities. This breakthrough enables the production of perovskite photovoltaics with high efficiencies of 25.58, 21.86, and 20.62% with aperture areas of 0.06, 29, and 1160 square centimeters, respectively.

Synergetic Optimization of Upper and Lower Surfaces of the SnO2 Electron Transport Layer for High-Performance n-i-p Perovskite Solar Cells

The SnO2 electron transport layer (ETL) has been recognized as one of the most effective protocols for achieving high-efficiency perovskite solar cells (PSCs). To date, most research has primarily focused on the modification of the upper surface of SnO2 ETL films. The lower surface of the SnO2 film, which directly influences the film formation of solution-processed SnO2, is equally important but receives relatively less attention. Herein, we present a synergetic optimization approach involving the deposition of aluminum oxide (AlOx) via atomic layer deposition (ALD) as a buffer layer and the incorporation of rubidium acetate (RbAc) as an upper surface passivation additive. This process leads to a conformal coating of SnO2 nanoparticles, improved electrical performance, and higher-quality perovskite crystals. As a result, with this composite ETL film, the power conversion efficiency (PCE) reached 22.41 from 20.77%. Further modification with p-butyl iodide (BAI) on the perovskite upper surface increased the champion PCE to 23.32%, with a voltage loss of 0.41 V, ranking among the lowest values for the triple-cation mixed-halide perovskite absorber (1.58 eV). Importantly, the perovskite solar cells remained 87.30% of its initial performance after 14 days of aging and exhibited photostability under long-term UV (254 nm) illumination.

Eliminating Voids and Residual PbI2 beneath a Perovskite Film via Buried Interface Modification for Efficient Solar Cells

The commercialization process of perovskite solar cells (PSCs) is markedly restricted by the power conversion efficiency (PCE) and long-term stability. During fabrication and operation, the bottom interface of the organic-inorganic hybrid perovskite layer frequently exhibits voids and residual PbI2, while these defects inevitably act as recombination centers and degradation sites, affecting the efficiency and stability of the devices. Therefore, the degradation and nonradiative recombination originating from the buried interface should be thoroughly resolved. Here, we report a multifunctional passivator by introducing malonic dihydrazide as an interfacial chemical bridge between the electron transport layer and the perovskite (PVK) layer. MADH with hydrazine groups improves the surface affinity of SnO2 and provides nucleation sites for the growth of PVK, leading to the reduced residual PbI2 and the voids resulting from the inhomogeneous solvent volatilization at the bottom interface. Meanwhile, the hydrazine group and carbonyl group synergistically coordinate with Pb2+ to improve the crystal growth environment, reducing the number of Pb-related defects. Eventually, the PCE of the PSCs is significantly enhanced benefiting from the reduced interfacial defects and the increased carrier transport. Moreover, the reductive nature of hydrazide further inhibits I2 generation during long-term operation, and the device retains 90% of the initial PCE under a 1 sun continuous illumination exposure of 700 h.

Key Roles of Interfaces in Inverted Metal-Halide Perovskite Solar Cells

Metal-halide perovskite solar cells (PSCs), an emerging technology for transforming solar energy into a clean source of electricity, have reached efficiency levels comparable to those of commercial silicon cells. Compared with other types of PSCs, inverted perovskite solar cells (IPSCs) have shown promise with regard to commercialization due to their facile fabrication and excellent optoelectronic properties. The interlayer interfaces play an important role in the performance of perovskite cells, not only affecting charge transfer and transport, but also acting as a barrier against oxygen and moisture permeation. Herein, we describe and summarize the last three years of studies that summarize the advantages of interface engineering-based advances for the commercialization of IPSCs. This review includes a brief introduction of the structure and working principle of IPSCs, and analyzes how interfaces affect the performance of IPSC devices from the perspective of photovoltaic performance and device lifetime. In addition, a comprehensive summary of various interface engineering approaches to solving these problems and challenges in IPSCs, including the use of interlayers, interface modification, defect passivation, and others, is summarized. Moreover, based upon current developments and breakthroughs, fundamental and engineering perspectives on future commercialization pathways are provided for the innovation and design of next-generation IPSCs.

Modulating the Distribution of Formamidinium Iodide by Ultrahigh Humidity Treatment Strategy for High-Quality Sequential Vapor Deposited Perovskite

The quality of two-step processed perovskites is significantly influenced by the distribution of organic amine salts. Especially, modulating the distribution of organic amine salts remains a grand challenge for sequential vapor-deposited perovskites due to the blocking effect of bottom compact PbI2. Herein, an ultrahigh humidity treatment strategy is developed to facilitate the diffusion of formamidinium iodide (FAI) from the top surface to the buried bottom interface on the sequential vapor-deposited bilayer structure. Both experimental and theoretical investigations elucidate the mechanism that moisture helps to i) create FAI diffusion channels by inducing a phase transition from α- to δ-phase in the perovskite, and ii) enhance the diffusivity of FAI by forming hydrogen bonds. This ultrahigh humidity treatment strategy enables the formation of a desired homogeneous and high-quality α-phase after annealing. As a result, a champion efficiency of 22.0% is achieved and 97.5% of its initial performance is maintained after aging for 1050 h under ambient air with a relative humidity of up to 80%. This FAI diffusion strategy provides new insights into the reproducible, scalable, and high-performance sequential vapor-deposited perovskite solar cells.

Strain Engineering and Halogen Compensation of Buried Interface in Polycrystalline Halide Perovskites

Inverted perovskite solar cells based on weakly polarized hole-transporting layers suffer from the problem of polarity mismatch with the perovskite precursor solution, resulting in a nonideal wetting surface. In addition to the bottom-up growth of the polycrystalline halide perovskite, this will inevitably worse the effects of residual strain and heterogeneity at the buried interface on the interfacial carrier transport and localized compositional deficiency. Here, we propose a multifunctional hybrid pre-embedding strategy to improve substrate wettability and address unfavorable strain and heterogeneities. By exposing the buried interface, it was found that the residual strain of the perovskite films was markedly reduced because of the presence of organic polyelectrolyte and imidazolium salt, which not only realized the halogen compensation and the coordination of Pb2+ but also the buried interface morphology and defect recombination that were well regulated. Benefitting from the above advantages, the power conversion efficiency of the targeted inverted devices with a bandgap of 1.62 eV was 21.93% and outstanding intrinsic stability. In addition, this coembedding strategy can be extended to devices with a bandgap of 1.55 eV, and the champion device achieved a power conversion efficiency of 23.74%. In addition, the optimized perovskite solar cells retained 91% of their initial efficiency (960 h) when exposed to an ambient relative humidity of 20%, with a T80 of 680 h under heating aging at 65 °C, exhibiting elevated durability.