Aqueous Solution Processing of Combustible Precursor Compounds into Amorphous Indium Gallium Zinc Oxide (IGZO) Semiconductors for Thin Film Transistor Applications

Thermal Analysis of Metal-Organic Precursors for Functional Cu:ΝiOx Hole Transporting Layer in Inverted Perovskite Solar Cells: Role of Solution Combustion Chemistry in Cu:ΝiOx Thin Films Processing

Low temperature solution combustion synthesis emerges as a facile method for the synthesis of functional metal oxides thin films for electronic applications. We study the solution combustion synthesis process of Cu:NiO_x using different molar ratios (w/o, 0.1 and 1.5) of fuel acetylacetone (Acac) to oxidizer (Cu, Ni Nitrates) as a function of thermal annealing temperatures 150, 200, and 300 °C. The solution combustion synthesis process, in both thin films and bulk Cu:NiO_x, is investigated. Thermal analysis studies using TGA and DTA reveal that the Cu:NiO_x thin films show a more gradual mass loss while the bulk Cu:NiO_x exhibits a distinct combustion process. The thin films can crystallize to Cu:NiO_x at an annealing temperature of 300 °C, irrespective of the Acac/Oxidizer ratio, whereas lower annealing temperatures (150 and 200 °C) produce amorphous materials. A detail characterization study of solution combustion synthesized Cu:NiO_x, including XPS, UV-Vis, AFM, and Contact angle measurements, is presented. Finally, 50 nm Cu:NiO_x thin films are introduced as HTLs within the inverted perovskite solar cell device architecture. The Cu:NiO_x HTL annealed at 150 and 200 °C provided PVSCs with limited functionality, whereas efficient triple-cation Cs_0.04(MA_0.17FA_0.83)_0.96 Pb(I_0.83Br_0.17)₃-based PVSCs achieved for Cu:NiO_x HTLs for annealing temperature of 300 °C.

Properties of RF Magnetron-Sputtered Copper Gallium Oxide (CuGa2O4) Thin Films

Thin films of CuGa2O4 were deposited using an RF magnetron-sputtering technique for the first time. The sputtered CuGa2O4 thin films were post-deposition annealed at temperatures varying from 100 to 900 °C in a constant O2 ambience for 1.5 h. Structural and morphological studies were performed on the films using X-ray diffraction analysis (XRD) and a Field Emission Scanning Electron Microscope (FESEM). The presence of CuGa2O4 phases along with the CuO phases was confirmed from the XRD analysis. The minimum critical temperature required to promote the crystal growth in the films was identified to be 500 °C using XRD analysis. The FESEM images showed an increase in the grain size with an increase in the annealing temperature. The resistivity values of the films were calculated to range between 6.47 × 103 and 2.5 × 108 Ωcm. Optical studies were performed on all of the films using a UV-Vis spectrophotometer. The optical transmission in the 200–800 nm wavelength region was noted to decrease with an increase in the annealing temperature. The optical bandgap value was recorded to range between 3.59 and 4.5 eV and showed an increasing trend with an increase in the annealing temperature.

Environmentally Benign Solution-Based Procedure for the Fabrication of Metal Oxide Coatings on Metallic Pigments

Aluminum pigments were coated with Fe2O3 and CuO by solution-based thermal decomposition of the urea nitrate compounds hexakisureairon(III)nitrate and tetrakisureacopper(II)nitrate. The deposition process was optimized to obtain homogeneously coated aluminum pigments. The growth of the surface coatings was controlled by investigation with scanning electron microscopy, energy dispersive X-ray spectroscopy and static light scattering as well as infrared, X-ray diffraction and thermogravimetric analysis. The iron precursor showed an incomplete decomposition in solution, incorporating traces of urea molecules inside the coatings while the copper precursor showed complete dissociation accompanied by in situ formation of amine complexes. The amount of organic residues resulting from ligand fragments in the final oxide coatings could be reduced to 22 % for the iron oxide and 12 % for the copper oxide by further temperature treatment in solution (259 °C). Colorimetric investigations of the obtained pigments revealed an excellent hiding power, outperforming the pigments used in current state-of-the-art formulations.

Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route

Combustion synthesis of dielectric yttrium oxide and aluminium oxide thin films is possible by introducing a molecular single-source precursor approach employing a newly designed nitro functionalized malonato complex of yttrium (Y-DEM-NO₂1) as well as defined urea nitrate coordination compounds of yttrium (Y-UN 2) and aluminium (Al-UN 3). All new precursor compounds were extensively characterized by spectroscopic techniques (NMR/IR) as well as by single-crystal structure analysis for both urea nitrate coordination compounds. The thermal decomposition of the precursors 1–3 was studied by means of differential scanning calorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG-MS/IR). As a result, a controlled thermal conversion of the precursors into dielectric thin films could be achieved. These oxidic thin films integrated within capacitor devices are exhibiting excellent dielectric behaviour in the temperature range between 250 and 350 °C, with areal capacity values up to 250 nF cm⁻², leakage current densities below 1.0 × 10⁻⁹ A cm⁻² (at 1 MV cm⁻¹) and breakdown voltages above 2 MV cm⁻¹. Thereby the increase in performance at higher temperatures can be attributed to the gradual conversion of the intermediate hydroxy species into the respective metal oxide which is confirmed by X-ray photoelectron spectroscopy (XPS). Finally, a solution-processed Y_xO_y based TFT was fabricated employing the precursor Y-DEM-NO₂1. The device exhibits decent TFT characteristics with a saturation mobility (μ_sat) of 2.1 cm² V⁻¹ s⁻¹, a threshold voltage (V_th) of 6.9 V and an on/off current ratio (I_on/off) of 7.6 × 10⁵.

Transformation of a new molecular precursor allows the formation of yttrium oxide under moderate conditions displaying high voltage breakthrough behaviour.

Expeditious, scalable solution growth of metal oxide films by combustion blade coating for flexible electronics

Metal oxide (MO) semiconductor thin films prepared from solution typically require multiple hours of thermal annealing to achieve optimal lattice densification, efficient charge transport, and stable device operation, presenting a major barrier to roll-to-roll manufacturing. Here, we report a highly efficient, cofuel-assisted scalable combustion blade-coating (CBC) process for MO film growth, which involves introducing both a fluorinated fuel and a preannealing step to remove deleterious organic contaminants and promote complete combustion. Ultrafast reaction and metal-oxygen-metal (M-O-M) lattice condensation then occur within 10-60 s at 200-350 °C for representative MO semiconductor [indium oxide (In₂O₃), indium-zinc oxide (IZO), indium-gallium-zinc oxide (IGZO)] and dielectric [aluminum oxide (Al₂O₃)] films. Thus, wafer-scale CBC fabrication of IGZO-Al₂O₃ thin-film transistors (TFTs) (60-s annealing) with field-effect mobilities as high as ∼25 cm² V^-1 s^-1 and negligible threshold voltage deterioration in a demanding 4,000-s bias stress test are realized. Combined with polymer dielectrics, the CBC-derived IGZO TFTs on polyimide substrates exhibit high flexibility when bent to a 3-mm radius, with performance bending stability over 1,000 cycles.