Room-Temperature Transport Properties of Graphene with Defects Derived from Oxo-Graphene

Charge Transport in UV-Oxidized Graphene and Its Dependence on the Extent of Oxidation

Graphene oxides with different degrees of oxidation are prepared by controlling UV irradiation on graphene, and the charge transport and the evolution of the transport gap are investigated according to the extent of oxidation. With increasing oxygenous defect density nD, a transition from ballistic to diffusive conduction occurs at nD≃1012 cm-2 and the transport gap grows in proportion to nD. Considering the potential fluctuation related to the e-h puddle, the bandgap of graphene oxide is deduced to be Eg≃30nD(1012cm-2) meV. The temperature dependence of conductivity showed metal-insulator transitions at nD≃0.3×1012 cm-2, consistent with Ioffe-Regel criterion. For graphene oxides at nD≥4.9×1012 cm-2, analysis indicated charge transport occurred via 2D variable range hopping conduction between localized sp2 domain. Our work elucidates the transport mechanism at different extents of oxidation and supports the possibility of adjusting the bandgap with oxygen content.

Interlayer electron modulation in van der Waals heterostructures assembled by stacking monolayer MoS2 onto monolayer graphene with different electron transfer ability

Achieving tunable optoelectronic properties and clarifying interlayer interactions are key challenges in the development of 2D heterostructures. Herein, we report the feasible modulation of the optoelectronic properties of monolayer MoS₂ (1L-MoS₂) on three different graphene monolayers with varying ability in extracting electrons. Monolayer oxygen-functionalized graphene (1L-oxo-G, a high amount of oxygen of 60%) with a work function (WF) of 5.67 eV and its lowly oxidized reduction product, namely reduced-oxo-G (1L-r-oxo-G, a low amount of oxygen of 0.1%), with a WF of 5.85 eV serving as hole injection layers significantly enhance the photoluminescence (PL) intensity of MoS₂, whereas pristine monolayer graphene (1L-G) with a work function (WF) of 5.02 eV results in PL quenching of MoS₂. The enhancement in the PL intensity is due to increase of neutral exciton recombination. Furthermore, 1L-r-oxo-G/MoS₂ exhibited a higher increase (5-fold) in PL than 1L-oxo-G/MoS₂ (3-fold). Our research can help modulate the carrier concentration and electronic type of 1L-MoS₂ and has promising applications in optoelectronic devices.

Graphene nanocoating provides superb long-lasting corrosion protection to titanium alloy

OBJECTIVE

The presence of metallic species around failed implants raises concerns about the stability of titanium alloy (Ti-6Al-4V). Graphene nanocoating on titanium alloy (GN) has promising anti-corrosion properties, but its long-term protective potential and structural stability remains unknown. The objective was to determine GN's anti-corrosion potential and stability over time.

METHODS

GN and uncoated titanium alloy (Control) were challenged with a highly acidic fluorinated corrosive medium (pH 2.0) for up to 240 days. The samples were periodically tested using potentiodynamic polarization curves, electrochemical impedance spectroscopy and inductively coupled plasma-atomic emission spectroscopy (elemental release). The integrity of samples was determined using Raman spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy and scanning electron microscopy. Statistical analyses were performed with one-sample t-test, paired t-test and one-way ANOVA with Tukey post-hoc test with a pre-set significance level of 5%.

RESULTS

There was negligible corrosion and elemental loss on GN. After 240 days of corrosion challenge, the corrosion rate and roughness increased by two and twelve times for the Control whereas remained unchanged for GN. The nanocoating presented remarkably high structural integrity and coverage area (>98%) at all time points tested.

SIGNIFICANCE

Graphene nanocoating protects titanium alloy from corrosion and dissolution over a long period while maintaining high structural integrity. This coating has promising potential for persistent protection of titanium and potentially other metallic alloys against corrosion.

Enhancing Structural Properties and Performance of Graphene-Based Devices Using Self-Assembled HMDS Monolayers

The performance of graphene devices is often limited by defects and impurities induced during device fabrication. Polymer residue left on the surface of graphene after photoresist processing can increase electron scattering and hinder electron transport. Furthermore, exposing graphene to plasma-based processing such as sputtering of metallization layers can increase the defect density in graphene and alter the device performance. Therefore, the preservation of the high-quality surface of graphene during thin-film deposition and device manufacturing is essential for many electronic applications. Here, we show that the use of self-assembled monolayers (SAMs) of hexamethyldisilazane (HMDS) as a buffer layer during the device fabrication of graphene can significantly reduce damage, improve the quality of graphene, and enhance device performance. The role of HMDS has been systematically investigated using surface analysis techniques and electrical measurements. The benefits of HMDS treatment include a significant reduction in defect density compared with as-treated graphene and more than a 2-fold reduction of contact resistance. This surface treatment is simple and offers a practical route for improving graphene device interfaces, which is important for the integration of graphene into functional devices such as electronics and sensor devices.

Chemical and electrochemical synthesis of graphene oxide - a generalized view

Graphene oxide (GO) is a water soluble carbon material in general, suitable for applications in electronics, the environment, and biomedicine. GO is produced by oxidation of abundantly available graphite, turning black graphite into water-dispersible single layers of functionalized graphene-related materials. Therefore, oxidation gives chemicals access to the complete surface area of GO. These fundamentals have led to a rich chemistry of GO. Here, we review the progress made in controlling the synthesis of GO, introduce the current structural models used to explain the phenomena and present versatile strategies to functionalize the surface of GO. Finally, an outlook is given for future directions.

Evidence for Electron Transfer between Graphene and Non-Covalently Bound π-Systems

Hybridizing graphene and molecules possess a high potential for developing materials for new applications. However, new methods to characterize such hybrids must be developed. Herein, the wet-chemical non-covalent functionalization of graphene with cationic π-systems is presented and the interaction between graphene and the molecules is characterized in detail. A series of tricationic benzimidazolium salts with various steric demand and counterions was synthesized, characterized and used for the fabrication of graphene hybrids. Subsequently, the doping effects were studied. The molecules are adsorbed onto graphene and studied by Raman spectroscopy, XPS as well as ToF-SIMS. The charged π-systems show a p-doping effect on the underlying graphene. Consequently, the tricationic molecules are reduced through a partial electron transfer process from graphene, a process which is accompanied by the loss of counterions. DFT calculations support this hypothesis and the strong p-doping could be confirmed in fabricated monolayer graphene/hybrid FET devices. The results are the basis to develop sensor applications, which are based on analyte/molecule interactions and effects on doping.

Room-Temperature Transport Properties of Graphene with Defects Derived from Oxo-Graphene

In recent years, graphene oxide has been considered as a soluble precursor of graphene for electronic applications. However, the performance lags behind that of graphene due to lattice defects. Here, the relation between the density of defects in the range of 0.2 % and 1.5 % and the transport properties is quantitatively studied. Therefore, the related flakes of monolayers of graphene were prepared from oxo-functionalized graphene (oxo-G). The morphologic structure of oxo-G was imaged by atomic force microscopy (AFM) and scanning tunneling microscopy (STM). Field-effect mobility values were determined to range between 0.3 cm2  V-1  s-1 and 33.2 cm2  V-1  s-1 , which were inversely proportional to the density of defects. These results provide the first quantitative description of the density of defects and transport properties, which plays an important role for potential applications.