Applications of focused ion beams in microelectronics production, design and development

Level set simulation of focused ion beam sputtering of a multilayer substrate

The evolution of a multilayer sample surface during focused ion beam processing was simulated using the level set method and experimentally studied by milling a silicon dioxide layer covering a crystalline silicon substrate. The simulation took into account the redeposition of atoms simultaneously sputtered from both layers of the sample as well as the influence of backscattered ions on the milling process. Monte Carlo simulations were applied to produce tabulated data on the angular distributions of sputtered atoms and backscattered ions. Two sets of test structures including narrow trenches and rectangular boxes with different aspect ratios were experimentally prepared, and their cross sections were visualized in scanning transmission electron microscopy images. The superimposition of the calculated structure profiles onto the images showed a satisfactory agreement between simulation and experimental results. In the case of boxes that were prepared with an asymmetric cross section, the simulation can accurately predict the depth and shape of the structures, but there is some inaccuracy in reproducing the form of the left sidewall of the structure with a large amount of the redeposited material. To further validate the developed simulation approach and gain a better understanding of the sputtering process, the distribution of oxygen atoms in the redeposited layer derived from the numerical data was compared with the corresponding elemental map acquired by energy-dispersive X-ray microanalysis.

Atomic-level imaging of beam-sensitive COFs and MOFs by low-dose electron microscopy

Electron microscopy, an important technique that allows for the precise determination of structural information with high spatiotemporal resolution, has become indispensable in unravelling the complex relationships between material structure and properties ranging from mesoscale morphology to atomic arrangement. However, beam-sensitive materials, particularly those comprising organic components such as metal-organic frameworks (MOFs) and covalent organic frameworks (COFs), would suffer catastrophic damage from the high energy electrons, hindering the determination of atomic structures. A low-dose approach has arisen as a possible solution to this problem based on the integration of advancements in several aspects: electron optical system, detector, image processing, and specimen preservation. This article summarizes the transmission electron microscopy characterization of MOFs and COFs, including local structures, host-guest interactions, and interfaces at the atomic level. Revolutions in advanced direct electron detectors, algorithms in image acquisition and processing, and emerging methodology for high quality low-dose imaging are also reviewed. Finally, perspectives on the future development of electron microscopy methodology with the support of computer science are presented.

Evaluation of a New Strategy for Transverse Tem Specimen Preparation by Focused-Ion-Beam Thinning

In this paper, different variations of a recently developed focused ion beam (FIB)-based TEM specimen preparation technique are studied conceptually and experimentally, compared, and evaluated. This procedure mainly consists of formation, removal, transport, and mounting of an electron transparent transverse membrane on a support grid for TEM study. Based on the experimental results obtained from this evaluation, some modifications have been conceived and implemented. These details as well as other critical information have been presented and discussed.

Focused Ion Beam Milling and Micromanipulation Lift-Out for Site Specific Cross-Section Tem Specimen Preparation

A site specific technique for cross-section transmission electron microscopy specimen preparation of difficult materials is presented. Focused ion beams are used to slice an electron transparent sliver of the specimen from a specific area of interest. Micromanipulation lift-out procedures are then used to transport the electron transparent specimen to a carbon coated copper grid for subsequent TEM analysis. The experimental procedures are described in detail and an example of the lift-out technique is presented.

Programmable growth of branched silicon nanowires using a focused ion beam

Although significant progress has been made in being able to spatially define the position of material layers in vapor-liquid-solid (VLS) grown nanowires, less work has been carried out in deterministically defining the positions of nanowire branching points to facilitate more complicated structures beyond simple 1D wires. Work to date has focused on the growth of randomly branched nanowire structures. Here we develop a means for programmably designating nanowire branching points by means of focused ion beam-defined VLS catalytic points. This technique is repeatable without losing fidelity allowing multiple rounds of branching point definition followed by branch growth resulting in complex structures. The single crystal nature of this approach allows us to describe resulting structures with linear combinations of base vectors in three-dimensional (3D) space. Finally, by etching the resulting 3D defined wire structures branched nanotubes were fabricated with interconnected nanochannels inside. We believe that the techniques developed here should comprise a useful tool for extending linear VLS nanowire growth to generalized 3D wire structures.

Direct insights on flax fiber structure by focused ion beam microscopy

In this article, it is shown that focused ion beam (FIB) systems can be used to study the inner structure of flax fibers, the use of which as a reinforcing material in polymer composites still draws much interest from multiple disciplines. This technique requires none of the specific preparations necessary for scanning electron microscopy or transmission electron microscopy studies. Irradiation experiments performed on FIB prepared cross sections with very low Ga+ ion beam currents revealed the softer material components of fibers. Thus, it confirmed the presence of pectin-rich layers at the interfaces between the fibers of a bundle, but also allowed the precise localization of such layers within the secondary cell wall. Furthermore, it suggested new insights on the transition modes between the sublayers of the secondary cell wall.

Chemical polishing method of GaAs specimens for transmission electron microscopy

A practical method for transmission electron microscopy specimen preparation of GaAs-based materials with quantum dot structures is presented to show that high-quality image observations in high-resolution transmission electron microscopy (HRTEM) can be effectively obtained. Specimens were prepared in plan-view and cross-section using ion milling, followed by two-steps chemical fine polishing with an ammonia solution (NH(4)OH) and a dilute H(2)SO(4) solution. Measurements of electron energy loss spectroscopy (EELS) and atomic force microscopy (AFM) proved that clean and flat specimens can be obtained without chemical residues. HRTEM images show that the amorphous regions of carbon and GaAs can be significantly reduced to enhance the contrast of lattice images of GaAs-based quantum structure.

Dual-beam focused ion beam/electron microscopy processing and metrology of redeposition during ion-surface 3D interactions, from micromachining to self-organized picostructures

Focused ion beam (FIB) tools have become a mainstay for processing and metrology of small structures. In order to expand the understanding of an ion impinging a surface (Sigmund sputtering theory) to our processing of small structures, the significance of 3D boundary conditions must be realized. We consider ion erosion for patterning/lithography, and optimize yields using the angle of incidence and chemical enhancement, but we find that the critical 3D parameters are aspect ratio and redeposition. We consider focused ion beam sputtering for micromachining small holes through membranes, but we find that the critical 3D considerations are implantation and redeposition. We consider ion beam self-assembly of nanostructures, but we find that control of the redeposition by ion and/or electron beams enables the growth of nanostructures and picostructures.

Application of focused ion beam to atom probe tomography specimen preparation from mechanically alloyed powders

Focused ion-beam milling has been applied to prepare needle-shaped atom probe tomography specimens from mechanically alloyed powders without the use of embedding media. The lift-out technique known from transmission electron microscopy specimen preparation was modified to cut micron-sized square cross-sectional blanks out of single powder particles. A sequence of rectangular cuts and annular milling showed the highest efficiency for sharpening the blanks to tips. First atom probe results on a Fe95Cu5 powder mechanically alloyed in a high-energy planetary ball mill for 20 h have been obtained. Concentration profiles taken from this powder sample showed that the Cu distribution is inhomogeneous on a nanoscale and that the mechanical alloying process has not been completed yet. In addition, small clusters of oxygen, stemming from the ball milling process, have been detected. Annular milling with 30 keV Ga ions and beam currents >or=50 pA was found to cause the formation of an amorphous surface layer, whereas no structural changes could be observed for beam currents <or=10 pA.

Atom probe specimen preparation with a dual beam SEM/FIB miller

Dual beam scanning electron microscope/focused ion beam (SEM/FIB) methods complement electropolishing methods and enable specimens to be made from a wider range of materials. Several methods have been developed to fabricate specimens from different forms of materials, including thin ribbons, mechanically ground sheet and fine powders. In addition, FIB-based methods can be used in conjunction with electropolishing methods to improve the shape, surface finish and taper angle of specimens. Several lift-out (LO) methods have been developed for selecting specific microstructural features or other regions of interest such as phases, interfaces, grain boundaries, subsurface or implanted regions and interdendritic regions. These LO methods make use of an in situ nanomanipulator and platinum deposition to transfer and attach the lifted out volume to a post for final annular milling into a needle-shaped specimen. In order to improve the efficiency and to facilitate the LO procedure, some special specimen mounts that hold both the specimen and the support post at the appropriate working distance have been developed.

Application of the focused ion beam technique in aerosol science: detailed investigation of selected, airborne particles

The focused ion beam technique was used to fabricate transmission electron microscope lamellas of selected, micrometre-sized airborne particles. Particles were sampled from ambient air on Nuclepore polycarbonate filters and analysed with an environmental scanning electron microscope. A large number of particles between 0.6 and 10 microm in diameter (projected optical equivalent diameter) were detected and analysed using computer-controlled scanning electron microscopy. From the resulting dataset, where the chemistry, morphology and position of each individual particle are stored, two particles were selected for a more detailed investigation. For that purpose, the particle-loaded filter was transferred from the environmental scanning electron microscope to the focused ion beam, where lamellas of the selected particles were fabricated. The definition of a custom coordinate system enabled the relocation of the particles after the transfer. The lamellas were finally analysed with an analytical transmission electron microscope. Internal structure and elemental distribution maps of the interior of the particles provided additional information about the particles, which helped to assign the particles to their sources. The combination of computer-controlled scanning electron microscopy, focused ion beam and transmission electron microscopy offers new possibilities for characterizing airborne particles in great detail, eventually enabling a detailed source apportionment of specific particles. The particle of interest can be selected from a large dataset (e.g. based on chemistry and/or morphology) and then investigated in more detail in the transmission electron microscope.

Strategies for fabricating atom probe specimens with a dual beam FIB

A FIB-based lift-out method for preparing atom probe specimens at site specific locations such as coarse precipitates, grain boundaries, interphase interfaces, denuded zones, heat affected zones, implanted, near surface and subsurface regions, shear bands, etc. has been developed. FIB-based methods for the fabrication of atom probe specimens from thin ribbons, sheet stock, and powders have been developed.

A comparison of EDS microanalysis in FIB-prepared and electropolished TEM thin foils

This paper reports the results of a fine-probe EDS microanalytical study of cellular precipitation in a Cu-Ti binary alloy. Compositional profiles across the solute depleted Cu-rich FCC lamellae and the Cu4Ti lamellae within isothermally formed cellular colonies were measured in a FEG-TEM from thin-foil specimens prepared by conventional electropolishing and by a technique using a Ga+ focused ion-beam (FIB). The Cliff-Lorimer ratio method, with an absorption correction, was employed to quantify the compositions. Two FIB samples were prepared with different orientations of the lamellae with respect to the ion-milling direction. The compositional profiles across the Cu-rich FCC lamellae and the Cu4Ti compound lamellae in both the FIB-prepared samples and the electropolished sample were, within experimental error, numerically equivalent. The composition of the Cu4Ti compound phase lamellae was very close to the ideal stoichiometric composition of 20 at % Ti. It is concluded that for this system, and for the specimen preparation procedures used in this study, the Ga+ ion-milling process has had no detectable effect on the chemistry changes across the interlamellar interface at the scale studied. These results indicate that the possible sources of chemical artifacts which include redeposition, preferential sputtering and ion-induced atomic migration can be minimized if several precautions are taken during milling in the FIB. Consistent with previous investigators, it was also found that the ion-milling process does introduce significant structural artifacts (e.g., dislocations) into the softer FCC Cu-rich phase compared with a specimen produced by conventional electropolishing.

Applications of the FIB lift-out technique for TEM specimen preparation

A site-specific technique for cross-section transmission electron microscopy specimen preparation of difficult materials is presented. A focused ion beam was used to slice an electron transparent membrane from a specific area of interest within a bulk sample. Micromanipulation lift-out procedures were then used to transport the electron-transparent specimen to a carbon-coated copper grid for subsequent TEM analysis. The FIB (focused ion beam) lift-out technique is a fast method for the preparation of site-specific TEM specimens. The versatility of this technique is demonstrated by presenting cross-sectioned TEM specimens from several types of materials systems, including a multi-layered integrated circuit on a Si substrate, a galvanized steel, a polycrystalline SiC ceramic fiber, and a ZnSe optical ceramic. These specimens have both complex surface geometry and interfaces with complex chemistry. FIB milling was performed sequentially through different layers of cross-sectioned materials so that preferential sputtering was not a factor in preparing TEM specimens. The FIB lift-out method for TEM analysis is a useful technique for the study of complex materials systems for TEM analysis.

Cross-sectional sample preparation by focused ion beam: a review of ion-sample interaction

A focused ion beam (FIB) was applied for cross-sectional sample preparation with both transmission electron microscopes (TEM) and scanning electron microscopes (SEM). The FIB sample preparation has the advantage of high positioning accuracy for cross sections. On the other hand, a broad ion beam (BIB) has been conventionally used for thinning TEM samples. Although both FIB and BIB use energetic ion beams, they are essentially different from each other in many aspects such as beam size, beam current density, incident angle of the beam with respect to cross sections, and beam scanning (i.e., dynamic or static beam). In this study, FIB cross-sectioning is compared with BIB thinning. We review inherent characteristics such as positioning accuracy and uniformity of cross section, radiation damage, and beam heating. Discussion is held from a view-point of ion beam and sample interaction.