Embedded nanofibers induced by high-energy ion irradiation of bulk GaSb

Self-Assembly of Carbon Black/AAO Templates on Nanoporous Si for Broadband Infrared Absorption

Broadband absorption in the mid-infrared region is of significance for wide applications, such as photo/thermal detection, infrared stealth, and thermal imaging. Recently, metal-based plasmonic absorbers have been developed in the mid-infrared region. However, the fabrication cost, thickness, and bandwidth of these absorbers applied in aerospace still need to be improved. In this study, we propose and experimentally demonstrate a large-area, rather thin, metal-free absorber with broadband mid-infrared absorption based on a low-cost self-assembly process. The metal-free absorber is fabricated by spraying carbon black nanoparticles onto 5 μm-thick transferrable anodic aluminum oxide (AAO) templates on nanoporous Si graded-index films, which are fabricated by ion irradiation. Experimental results show that the average absorbance can reach 97.5% in the range of 2.5-15.3 μm. Full-wave numerical simulations show that the electromagnetic fields are greatly enhanced into pores, as these random carbon black particles serve as scatter centers and couple light into 5 μm-thick AAO templates, enhancing the interaction of light with carbon black significantly, and reveal that the high-performance broadband absorption is attributed to the light-trapping effect. The significant light absorption combined with a low-cost, high-production self-assembly technique suggests that the absorber can be used in the fields of optoelectronics and integrated photonics.

Nanoporous Structure Formation on the Surface of InSb by Ion Beam Irradiation

Nanoporous structures have a great potential for application in electronic and photonic materials, including field effect transistors, photonic crystals, and quantum dots. The control of size and shape is important for such applications. In this study, nanoporous structure formation on the indium antimonide (InSb) surface was investigated using controlled focused ion beam irradiation. Upon increasing the ion dose, the structures grew larger, and the shapes changed from voids to pillars. The structures also became larger when the ion flux (high-dose) and accelerating voltage were increased. The structure grew obliquely on the substrate by following the ion beam irradiation of 45°. The shapes of the structures formed by superimposed ion beam irradiation were affected by primary irradiation conditions. The nanostructural features on the InSb surface were easy to control by changing the ion beam conditions.

Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions

Ion beam irradiation-induced nanoporous structure formation was investigated on GaSb, InSb, and Ge surfaces via controlled point defect creation using a focused ion beam (FIB). ‎This paper compares the nanoporous structure formation under the same extent of point defect creation while changing the accelerating voltage and ion dose. Although the same number of point defects were created in each case, different structures were formed on the different surfaces. The depth direction density of the point defects was an important factor in this trend. The number of point defects required for nanoporous structure formation was 4 × 10²² vacancies/m² at a depth of 18 nm under the surface, based on a comparison of similar nanoporous structure features in GaSb. The nanoporous structure formation by ion beam irradiation on GaSb, InSb, and Ge surfaces was controlled by the number and areal distribution of the created point defects.

Optical Properties of GaSb Nanofibers

Amorphous GaSb nanofibers were obtained by ion beam irradiation of bulk GaSb single-crystal wafers, resulting in fibers with diameters of ~20 nm. The Raman spectra and photoluminescence (PL) of the ion irradiation-induced nanofibers before and after annealing were studied. Results show that the Raman intensity of the GaSb LO phonon mode decreased after ion beam irradiation as a result of the formation of the amorphous nanofibers. A new mode is observed at ~155 cm(-1) both from the unannealed and annealed GaSb nanofiber samples related to the A1g mode of Sb-Sb bond vibration. Room temperature PL measurements of the annealed nanofibers present a wide feature band at ~1.4-1.6 eV. The room temperature PL properties of the irradiated samples presents a large blue shift compared to bulk GaSb. Annealed nanofibers and annealed nanofibers with Au nanodots present two different PL peaks (400 and 540 nm), both of which may originate from Ga or O vacancies in GaO. The enhanced PL and new band characteristics in nanostructured GaSb suggest that the nanostructured fibers may have unique applications in optoelectronic devices.

Ion irradiation-induced bimodal surface morphology changes in InSb

High-energy ion irradiation of InSb results in the formation of bimodal surface structures, namely microscale hillock-like structures fully composed of nanoscale fibers. Analysis of the surface structures by a wide range of electron microscopy techniques reveals correlations between the irradiation conditions, such as the ion energy and fluence, and changes in the surface morphology. Sputtering effects play a key role in the integrity of the surface layer with increasing ion fluence. Possible mechanisms responsible for the morphological transformation are discussed, including both irradiation-induced and mechanical effects.