1
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Zhang S, He R, Duo Y, Chen R, Wang L, Wang J, Wei T. Plasmon-enhanced deep ultraviolet Micro-LED arrays for solar-blind communications. OPTICS LETTERS 2023; 48:3841-3844. [PMID: 37527063 DOI: 10.1364/ol.496397] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Accepted: 06/19/2023] [Indexed: 08/03/2023]
Abstract
Localized surface plasmon resonance (LSPR)-enhanced deep ultraviolet (DUV) Micro-light emitting diodes (Micro-LEDs) using Al nanotriangle arrays (NTAs) are reported for improving the -3 dB modulation bandwidth. Through self-assembled nanospheres, the high-density Al NTAs arrays are transferred into the designated p-AlGaN region of the Micro-LEDs, realizing the effect of LSPR coupling. A 2.5-fold enhancement in photoluminescence (PL) intensity is demonstrated. Combined with the PL intensity ratio at 300 K and 10 K, internal quantum efficiency (IQE) may be increased about 15-20% by the plasmonic effect and the carrier lifetime decreases from 1.15 ns to 0.82 ns, suggesting that LSPR accelerates the spontaneous emission rate. Resulting from the improvement of the IQE, the electroluminescence intensity of Micro-LED arrays with LSPR is obviously increased. Meanwhile, the -3 dB bandwidth of 6 × 6 Micro-LED arrays is increased from 180 MHz to 300 MHz at a current density of 200 A/cm2. A potential way is proposed to further increase both the IQE and the modulation bandwidth of DUV Micro-LEDs.
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2
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Ding Y, Xue K, Zhang J, Yan L, Li Q, Yao Y, Zhou L. Two-Dimensional Octuple-Atomic-Layer M 2Si 2N 4 (M = Al, Ga and In) with Long Carrier Lifetime. MICROMACHINES 2023; 14:405. [PMID: 36838105 PMCID: PMC9966885 DOI: 10.3390/mi14020405] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/30/2022] [Revised: 02/03/2023] [Accepted: 02/03/2023] [Indexed: 06/18/2023]
Abstract
Bulk III-nitride materials MN (M = Al, Ga and In) and their alloys have been widely used in high-power electronic and optoelectronic devices, but stable two-dimensional (2D) III-nitride materials, except h-BN, have not been realized yet. A new kind of 2D III-nitride material M2Si2N4 (M = Al, Ga and In) is predicted by choosing Si as the appropriate passivation element. The stability, electronic and optical properties of 2D M2Si2N4 materials are studied systematically based on first-principles calculations. The results show that Al2Si2N4 and Ga2Si2N4 are found to be indirect bandgap semiconductors, while In2Si2N4 is a direct bandgap semiconductor. Moreover, Al2Si2N4 and In2Si2N4 have good absorption ability in the visible light region, while Ga2Si2N4 is an ultraviolet-light-absorbing material. Furthermore, the carrier lifetimes of Ga2Si2N4 and In2Si2N4 are as large as 157.89 and 103.99 ns, respectively. All these desirable properties of M2Si2N4 materials make them attractive for applications in electronics and photoelectronics.
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Affiliation(s)
- Yimin Ding
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
| | - Kui Xue
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Jing Zhang
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Luo Yan
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Qiaoqiao Li
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Yisen Yao
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
- Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Liujiang Zhou
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
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3
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Zaytsev V, Ermatov TI, Fedorov FS, Balabin N, Kapralov PO, Bondareva JV, Ignatyeva DO, Khlebtsov BN, Kosolobov SS, Belotelov VI, Nasibulin AG, Gorin DA. Design of an Artificial Opal/Photonic Crystal Interface for Alcohol Intoxication Assessment: Capillary Condensation in Pores and Photonic Materials Work Together. Anal Chem 2022; 94:12305-12313. [PMID: 36027051 DOI: 10.1021/acs.analchem.2c00573] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Alcohol intoxication has a dangerous effect on human health and is often associated with a risk of catastrophic injuries and alcohol-related crimes. A demand to address this problem adheres to the design of new sensor systems for the real-time monitoring of exhaled breath. We introduce a new sensor system based on a porous hydrophilic layer of submicron silica particles (SiO2 SMPs) placed on a one-dimensional photonic crystal made of Ta2O5/SiO2 dielectric layers whose operation relies on detecting changes in the position of surface wave resonance during capillary condensation in pores. To make the active layer of SiO2 SMPs, we examine the influence of electrostatic interactions of media, particles, and the surface of the crystal influenced by buoyancy, gravity force, and Stokes drag force in the frame of the dip-coating preparation method. We evaluate the sensing performance toward biomarkers such as acetone, ammonia, ethanol, and isopropanol and test sensor system capabilities for alcohol intoxication assessment. We have found this sensor to respond to all tested analytes in a broad range of concentrations. By processing the sensor signals by principal component analysis, we selectively determined the analytes. We demonstrated the excellent performance of our device for alcohol intoxication assessment in real-time.
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Affiliation(s)
- Valeriy Zaytsev
- Skolkovo Institute of Science and Technology, 3 Nobel Street, Moscow 121205, Russia
| | - Timur I Ermatov
- Skolkovo Institute of Science and Technology, 3 Nobel Street, Moscow 121205, Russia
| | - Fedor S Fedorov
- Skolkovo Institute of Science and Technology, 3 Nobel Street, Moscow 121205, Russia
| | - Nikita Balabin
- Skolkovo Institute of Science and Technology, 3 Nobel Street, Moscow 121205, Russia
| | - Pavel O Kapralov
- Russian Quantum Centre, 30 bld. 1 Bolshoy Boulevard, Moscow 121205, Russia
| | - Julia V Bondareva
- Skolkovo Institute of Science and Technology, 3 Nobel Street, Moscow 121205, Russia
| | - Daria O Ignatyeva
- Russian Quantum Centre, 30 bld. 1 Bolshoy Boulevard, Moscow 121205, Russia.,Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory, Moscow 119991, Russia
| | - Boris N Khlebtsov
- Institute of Biochemistry and Physiology of Plants and Microorganisms, 13 Prospekt Entuziastov, Saratov 410049, Russia.,Saratov State University, 83 Astrakhanskaya Street, Saratov 410012, Russia
| | - Sergey S Kosolobov
- Skolkovo Institute of Science and Technology, 3 Nobel Street, Moscow 121205, Russia
| | - Vladimir I Belotelov
- Russian Quantum Centre, 30 bld. 1 Bolshoy Boulevard, Moscow 121205, Russia.,Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory, Moscow 119991, Russia
| | - Albert G Nasibulin
- Skolkovo Institute of Science and Technology, 3 Nobel Street, Moscow 121205, Russia.,Aalto University, Kemistintie 1, P.O. Box 16100, Aalto 00076, Finland
| | - Dmitry A Gorin
- Skolkovo Institute of Science and Technology, 3 Nobel Street, Moscow 121205, Russia
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4
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Amara N, Martin A, Potdevin A, Réveret F, Riassetto D, Chadeyron G, Langlet M. Nanostructuration of YAG:Ce Coatings by ZnO Nanowires: A Smart Way to Enhance Light Extraction Efficiency. NANOMATERIALS 2022; 12:nano12152568. [PMID: 35893536 PMCID: PMC9332156 DOI: 10.3390/nano12152568] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/30/2022] [Revised: 07/10/2022] [Accepted: 07/23/2022] [Indexed: 02/05/2023]
Abstract
In this study, we report on the enhancement of the light extraction efficiency of sol-gel-derived Y3Al5O12:Ce3+ (YAG:Ce) coatings using ZnO nanowire (NW) arrays. The ZnO NWs were grown by hydrothermal synthesis from a ZnO seed layer directly deposited on a YAG:Ce coating. Highly dense and vertically aligned ZnO NW arrays were evidenced on the top of the YAG:Ce coating by electron microscopy. A photoluminescence study showed that this original design leads to a different angular distribution of light together with an increase in emission efficiency of the YAG:Ce coating upon blue excitation, up to 60% more efficient compared to a non-structured YAG:Ce coating (without NWs). These improvements are ascribed to multi-scattering events for photons within the structure, allowing them to escape from the phosphor layer by taking optical paths different from those of the non-structured coating. This strategy of light extraction enhancement appears to be very promising, since it uses soft chemical processes and cheap ZnO NWs and is applicable to any sol-gel-derived luminescent coating.
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Affiliation(s)
- Nehed Amara
- CNRS, Grenoble INP, LMGP, Institute of Engineering, Université Grenoble Alpes, 38000 Grenoble, France; (N.A.); (A.M.); (D.R.)
- CNRS, Clermont Auvergne INP, ICCF, Université Clermont Auvergne, F-63000 Clermont-Ferrand, France; (F.R.); (G.C.)
| | - Aubry Martin
- CNRS, Grenoble INP, LMGP, Institute of Engineering, Université Grenoble Alpes, 38000 Grenoble, France; (N.A.); (A.M.); (D.R.)
- CNRS, Clermont Auvergne INP, ICCF, Université Clermont Auvergne, F-63000 Clermont-Ferrand, France; (F.R.); (G.C.)
| | - Audrey Potdevin
- CNRS, Clermont Auvergne INP, ICCF, Université Clermont Auvergne, F-63000 Clermont-Ferrand, France; (F.R.); (G.C.)
- Correspondence: (A.P.); (M.L.)
| | - François Réveret
- CNRS, Clermont Auvergne INP, ICCF, Université Clermont Auvergne, F-63000 Clermont-Ferrand, France; (F.R.); (G.C.)
| | - David Riassetto
- CNRS, Grenoble INP, LMGP, Institute of Engineering, Université Grenoble Alpes, 38000 Grenoble, France; (N.A.); (A.M.); (D.R.)
| | - Geneviève Chadeyron
- CNRS, Clermont Auvergne INP, ICCF, Université Clermont Auvergne, F-63000 Clermont-Ferrand, France; (F.R.); (G.C.)
| | - Michel Langlet
- CNRS, Grenoble INP, LMGP, Institute of Engineering, Université Grenoble Alpes, 38000 Grenoble, France; (N.A.); (A.M.); (D.R.)
- Correspondence: (A.P.); (M.L.)
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5
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Zhou S, Zhao X, Du P, Zhang Z, Liu X, Liu S, Guo LJ. Application of patterned sapphire substrate for III-nitride light-emitting diodes. NANOSCALE 2022; 14:4887-4907. [PMID: 35297925 DOI: 10.1039/d1nr08221c] [Citation(s) in RCA: 28] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Recent decades have witnessed flourishing prosperity of III-nitride emitters in solid-state lighting and high-resolution displays. As one of the widely used substrates, sapphire shows superiority for heteroepitaxial growth of III-nitride light-emitting diode (LED) structure, due to the advantages of stability, low cost, high mechanical strength, as well as mature fabrication technology. However, realization of efficient LEDs grown on sapphire substrate is impeded by high density of defects in epilayers and low light extraction efficiency. The emergence of patterned sapphire substrate (PSS) turns out to be a promising and effective technology to overcome these problems and enhance the LED performances. In this review, we first introduce the background and recent advances of PSS applied in III-nitride visible and ultraviolet LEDs are. Then, we summarize the fabrication methods of PSS, together with novel methods to define nanometre-scale patterned structures. We further demonstrate the effect of PSS that contributes to reduce the threading dislocation density (TDD) of epilayers in detail. Meanwhile, mechanism of light extraction efficiency enhancement by adopting PSS is presented based on numerical analysis. Next, we explore the influence of PSS structural parameters (e.g. pattern size, pattern shape and aspect ratio) on LED performances, spanning from visible to deep ultraviolet UV emission region. Finally, challenges and potential prospects in PSS for future LED development are proposed and forecasted as well.
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Affiliation(s)
- Shengjun Zhou
- Center for Photonics and Semiconductors, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China.
| | - Xiaoyu Zhao
- Center for Photonics and Semiconductors, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China.
| | - Peng Du
- Center for Photonics and Semiconductors, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China.
| | - Ziqi Zhang
- Center for Photonics and Semiconductors, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China.
| | - Xu Liu
- Center for Photonics and Semiconductors, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China.
| | - Sheng Liu
- The Institute of Technological Sciences, Wuhan University, Wuhan, 430072, China.
| | - L Jay Guo
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109, USA.
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6
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Wang W, Wang G, Zhang Y, Sun XC, Yu Y, Lian Y. Light Management With Grating Structures in Optoelectronic Devices. Front Chem 2021; 9:737679. [PMID: 34395391 PMCID: PMC8355426 DOI: 10.3389/fchem.2021.737679] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/07/2021] [Accepted: 07/19/2021] [Indexed: 11/13/2022] Open
Abstract
Ordered and patterned micro/nanostructure arrays have emerged as powerful platforms for optoelectronic devices due to their unique ordered-dependent optical properties. Among various structures, grating structure is widely applied because of its simple fabrication process, easy adjusting of size and morph, and efficient light trapping. Herein, we summarized recent developments of light management with grating structures in optoelectronic devices. Typical mechanisms about the grating structures in optoelectronic devices have been reviewed. Moreover, the applications of grating structures in various optoelectronic devices have been presented. Meanwhile, the remaining bottlenecks and perspectives for future development have been discussed.
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Affiliation(s)
- Wei Wang
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, China.,State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China
| | - Gong Wang
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, China
| | - Yang Zhang
- Department of Experimental Pharmacology and Toxicology, School of Pharmacy, Jilin University, Changchun, China
| | - Xiang-Chao Sun
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China
| | - Yu Yu
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, China
| | - Yudong Lian
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, China
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7
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Shetty RM, Brady SR, Rothemund PWK, Hariadi RF, Gopinath A. Bench-Top Fabrication of Single-Molecule Nanoarrays by DNA Origami Placement. ACS NANO 2021; 15:11441-11450. [PMID: 34228915 PMCID: PMC9701110 DOI: 10.1021/acsnano.1c01150] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Large-scale nanoarrays of single biomolecules enable high-throughput assays while unmasking the underlying heterogeneity within ensemble populations. Until recently, creating such grids which combine the advantages of microarrays and single-molecule experiments (SMEs) has been particularly challenging due to the mismatch between the size of these molecules and the resolution of top-down fabrication techniques. DNA origami placement (DOP) combines two powerful techniques to address this issue: (i) DNA origami, which provides a ∼100 nm self-assembled template for single-molecule organization with 5 nm resolution and (ii) top-down lithography, which patterns these DNA nanostructures, transforming them into functional nanodevices via large-scale integration with arbitrary substrates. Presently, this technique relies on state-of-the-art infrastructure and highly trained personnel, making it prohibitively expensive for researchers. Here, we introduce a cleanroom-free, $1 benchtop technique to create meso-to-macro-scale DNA origami nanoarrays using self-assembled colloidal nanoparticles, thereby circumventing the need for top-down fabrication. We report a maximum yield of 74%, 2-fold higher than the statistical limit of 37% imposed on non-specific molecular loading alternatives. Furthermore, we provide a proof-of-principle for the ability of this nanoarray platform to transform traditionally low-throughput, stochastic, single-molecule assays into high-throughput, deterministic ones, without compromising data quality. Our approach has the potential to democratize single-molecule nanoarrays and demonstrates their utility as a tool for biophysical assays and diagnostics.
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Affiliation(s)
- Rishabh M. Shetty
- Biodesign Center for Molecular Design and Biomimetics (at the Biodesign Institute) at Arizona State University, Tempe, Arizona 85287, United States; School of Biological and Health Systems Engineering, Arizona State University, Tempe, Arizona 85287, United States
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Sarah R. Brady
- Biodesign Center for Molecular Design and Biomimetics (at the Biodesign Institute) at Arizona State University, Tempe, Arizona 85287, United States
| | - Paul W. K. Rothemund
- Department of Bioengineering, Computational and Mathematical Sciences, and Computation and Neural Systems, California Institute of Technology, Pasadena, California 91125, United States
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8
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Lei PH, Yang PC, Huang PC. Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes. MATERIALS 2021; 14:ma14092200. [PMID: 33922982 PMCID: PMC8123327 DOI: 10.3390/ma14092200] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/18/2021] [Revised: 03/30/2021] [Accepted: 04/22/2021] [Indexed: 11/16/2022]
Abstract
We fabricated the photonic-crystal-structured p-GaN (PC-structured p-GaN) nanorods using the modified polystyrene nanosphere (PS NS) lithography method for InGaN/GaN green light-emitting diodes (LEDs) to enhance the light extraction efficiency (LEE). A modified PS NS lithography method including two-times spin-coating processes and the post-spin-coating heating treatment was used to obtain a self-assembly close-packed PS NS array of monolayer as a mask and then a partially dry etching process was applied to PS NS, SiO2, and p-GaN to form PC-structured p-GaN nanorods on the InGaN/GaN green LEDs. The light output intensity and LEE of InGaN/GaN green LEDs with the PC-structured p-GaN nanorods depend on the period, diameter, and height of PC-structured p-GaN nanorods. RSoft FullWAVE software based on the three-dimension finite-difference time-domain (FDTD) algorithm was used to calculate the LEE of InGaN/GaN green LEDs with PC-structured p-GaN nanorods of the varied period, diameter, and height. The optimal period, diameter, and height of PC-structured p-GaN nanorods are 150, 350, and 110 nm. The InGaN/GaN green LEDs with optimal PC-structured p-GaN nanorods exhibit an enhancement of 41% of emission intensity under the driving current of 20 mA as compared to conventional LED.
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9
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Nyalosaso JL, Potdevin A, Réveret F, Disseix P, Mahiou R, Chadeyron G. Enhancement of light extraction in Y3Al5O12:Tb3+ thin films through nanopatterning. Chem Eng Sci 2020. [DOI: 10.1016/j.ces.2019.115416] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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10
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Wang C, Shao J, Lai D, Tian H, Li X. Suspended-Template Electric-Assisted Nanoimprinting for Hierarchical Micro-Nanostructures on a Fragile Substrate. ACS NANO 2019; 13:10333-10342. [PMID: 31437390 DOI: 10.1021/acsnano.9b04031] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Coating hierarchical micro-nanostructures on the surface of optoelectronic devices has been demonstrated to improve the overall performance. However, fabricating desired structures on a fragile optoelectronic device substrate is still challenging. A suspended-template electric-assisted nanoimprinting technique is proposed herein to controllably fabricate hierarchical micro-nanostructures on a fragile substrate. The suspension design of the template ensures that it conveniently deforms to fully fit the surface fluctuation of the substrate. The deformation of template and the filling of liquid polymer in the micro/nanocavities of the template are both driven by the powerful surface/interface force generated by an electric field applied between the template and substrate surface, thus protecting the fragile substrate from squeezing damage. Different morphologies of hierarchical micro-nanostructures are fabricated by changing the electric field. Based on suspended-template electric-assisted nanoimprinting, the environmentally adaptable fully covering hierarchical micro-nanostructures are encapsulated on the surface of flip-film light-emitting diode chips, thus significantly enhancing their light management in complex environments.
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Affiliation(s)
- Chunhui Wang
- Micro- and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering , Xi'an Jiaotong University , Xi'an , Shaanxi 710049 , China
| | - Jinyou Shao
- Micro- and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering , Xi'an Jiaotong University , Xi'an , Shaanxi 710049 , China
| | - Dengshui Lai
- Micro- and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering , Xi'an Jiaotong University , Xi'an , Shaanxi 710049 , China
| | - Hongmiao Tian
- Micro- and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering , Xi'an Jiaotong University , Xi'an , Shaanxi 710049 , China
| | - Xiangming Li
- Micro- and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering , Xi'an Jiaotong University , Xi'an , Shaanxi 710049 , China
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11
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Zhu P, Zhu H, Thapa S, Adhikari GC. Design rules for white light emitters with high light extraction efficiency. OPTICS EXPRESS 2019; 27:A1297-A1307. [PMID: 31510594 DOI: 10.1364/oe.27.0a1297] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2019] [Accepted: 07/19/2019] [Indexed: 06/10/2023]
Abstract
The finite-difference time-domain method is employed to study the light extraction efficiency of white light emitters. The cone arrays designed on top of white light emitters eliminate the dependency of light extraction on the wavelength and the cavity thickness and that leads to significant enhancement in light extraction efficiency for whole visible light spectrum. The light extraction efficiency of 81% has been achieved. Most importantly, the high extraction efficiency is achieved for the whole visible spectrum from 400 nm to 700 nm. This work will provide guidelines for designing highly efficient white light emitters for general illumination and display purpose.
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12
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Marappa B, Pattar V, Rudresha M. Investigations of structural, optical and electrical properties of Cu2+ doped Y2O3 nanosheets. Chem Phys Lett 2019. [DOI: 10.1016/j.cplett.2019.04.074] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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13
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Wang W, Li Y, Zheng Y, Li X, Huang L, Li G. Lattice Structure and Bandgap Control of 2D GaN Grown on Graphene/Si Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1802995. [PMID: 30821114 DOI: 10.1002/smll.201802995] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/29/2018] [Revised: 02/05/2019] [Indexed: 06/09/2023]
Abstract
2D group-III nitride materials have shown a great promise for applications in optoelectronic devices thanks to their thickness-dependent properties. However, the epitaxial growth of 2D group-III nitrides remains a challenge. In this work, epitaxial growth of 2D GaN with well-controlled lattice structures and bandgaps is achieved by plasma-enhanced metal organic chemical vapor deposition via effective regulation of plasma energy and growth temperature. The structure of graphene/2D GaN/Si heterostructures is carefully investigated by high-resolution transmission electron microscopy. The formation mechanism of the 2D GaN layer is clearly clarified by theoretical calculations. Furthermore, a bandgap for 2D GaN ranging from ≈4.18 to ≈4.65 eV varying with the numbers of layers is theoretically calculated and experimentally confirmed. 2D GaN with well-controlled lattice structure and bandgap holds great potential for the development of deep ultraviolet light-emitting diodes, energy conversion devices, etc.
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Affiliation(s)
- Wenliang Wang
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
- Guangdong Choicore Optoelectronics Co., Ltd., Heyuan, 517003, China
| | - Yuan Li
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Yulin Zheng
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Xiaochan Li
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Liegen Huang
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Guoqiang Li
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
- Guangdong Choicore Optoelectronics Co., Ltd., Heyuan, 517003, China
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14
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Yan D, Li R, Lu W, Piao C, Qiu L, Meng Z, Wang S. Flexible construction of cellulose photonic crystal optical sensing nano-materials detecting organic solvents. Analyst 2019; 144:1892-1897. [DOI: 10.1039/c8an01236a] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We developed a simple and efficient method to construct 3D and 2D opal and inverse opal cellulose photonic crystal films (CPCF) by embedding 3D or 2D polymethyl methacrylate (PMMA) colloidal arrays into carboxymethyl cellulose (CMC), respectively.
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Affiliation(s)
- Dan Yan
- School of Chemistry and Chemical Engineering
- Beijing Institute of Technology
- Beijing
- China
| | - Renbin Li
- School of Mechanical and Electrical Engineering
- Beijing Institute of Technology
- Beijing
- China
| | - Wei Lu
- School of Chemistry and Chemical Engineering
- Beijing Institute of Technology
- Beijing
- China
| | - Chunmei Piao
- School of Chemistry and Chemical Engineering
- Beijing Institute of Technology
- Beijing
- China
| | - Lili Qiu
- School of Chemistry and Chemical Engineering
- Beijing Institute of Technology
- Beijing
- China
| | - Zihui Meng
- School of Chemistry and Chemical Engineering
- Beijing Institute of Technology
- Beijing
- China
| | - Shushan Wang
- School of Mechanical and Electrical Engineering
- Beijing Institute of Technology
- Beijing
- China
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15
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Shen J, Zheng Y, Xu Z, Yu Y, Gao F, Zhang S, Gan Y, Li G. Crystallographic plane and topography-dependent growth of semipolar InGaN nanorods on patterned sapphire substrates by molecular beam epitaxy. NANOSCALE 2018; 10:21951-21959. [PMID: 30444225 DOI: 10.1039/c8nr07307d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
A low-cost, high-efficiency, and catalyst-free method for fabricating well-aligned and uniform semipolar InGaN nanorods (NRs) by molecular beam epitaxy (MBE) is proposed using an optimized patterned sapphire substrate (PSS) with high Miller index crystallographic planes. The dense, obliquely aligned, and high-quality semipolar (11[combining macron]02) InGaN NRs are fabricated on hexagonal pyramid arrays of the PSS for the first time in this work. A unique semipolar (11[combining macron]02) and polar (0001) InGaN NR array composite structure is thus achieved on a hexagonal pyramid PSS. The connected, uniform, and obliquely aligned NRs are formed on the PSS with cylindrical arrays. The cylindrical and hexagonal pyramid arrays of PSSs are structured by the standard photolithography process and etching techniques. Both pattern topography and crystallographic plane of the PSS significantly affect the morphology, dimension, and crystallographic orientation of InGaN NRs. It is clearly demonstrated that the PSS with exposed high Miller index crystallographic planes, with well-organized step-terrace structures, facilitates the growth of ordered and dense semipolar InGaN NRs. This work contributes to the thorough understanding of the nucleation and growth mechanisms of InGaN NRs on a high Miller index plane of the PSS with different topographies, as well as of those of controllably fabricating dense and uniform semipolar NRs, thus facilitating the fabrication of NR-based optoelectronic devices with enhanced performance.
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Affiliation(s)
- Jian Shen
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China.
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16
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Liu J, Cai X, Pan HC, Bandla A, Chuan CK, Wang S, Thakor N, Liao LD, Liu B. Molecular Engineering of Photoacoustic Performance by Chalcogenide Variation in Conjugated Polymer Nanoparticles for Brain Vascular Imaging. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1703732. [PMID: 29411945 DOI: 10.1002/smll.201703732] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2017] [Revised: 12/18/2017] [Indexed: 05/13/2023]
Abstract
As conjugated polymer nanoparticles (CPNs) have attracted growing interest as photoacoustic (PA) imaging contrast agents, revelation of the relationship between the molecular structure of conjugated polymers and PA property is highly in demand. Here, three donor-acceptor-structured conjugated polymer analogs are designed, where only a single heteroatom of acceptor units changes from oxygen to sulfur to selenium, allowing for systematic investigation of the molecular structure-PA property relationship. The absorption and PA spectra of these CPNs can be facilely tuned by changing the heteroatoms of the acceptor units. Moreover, the absorption coefficient, and in turn the PA signal intensity, decreases when the heteroatom changes from oxygen to sulfur to selenium. As these CPNs exhibit weak fluorescence and similar photothermal conversion efficiency (≈70%), their PA intensities are approximately proportional to their absorption coefficients. The in vivo brain vasculature imaging in this study also demonstrates this trend. This study provides a simple but efficient strategy to manipulate the PA properties of CPNs through changing the heteroatom at key positions.
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Affiliation(s)
- Jie Liu
- Department of Chemical and Biomolecular Engineering, National University of Singapore, 5A Engineering Drive 1, Singapore, 117411
- Institute of Advanced Materials (IAM), Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, China
| | - Xiaolei Cai
- Department of Chemical and Biomolecular Engineering, National University of Singapore, 5A Engineering Drive 1, Singapore, 117411
| | - Han-Chi Pan
- Institute of Biomedical Engineering and Nanomedicine, National Health Research Institutes, 35 Keyan Rd., Zhunan Town, Miaoli County, 35053, Taiwan
| | - Aishwarya Bandla
- Singapore Institute for Neurotechnology (SINAPSE), National University of Singapore, 28 Medical Drive, #05-COR, Singapore, 117456
| | - Chan Kim Chuan
- Singapore Institute for Neurotechnology (SINAPSE), National University of Singapore, 28 Medical Drive, #05-COR, Singapore, 117456
| | - Shaowei Wang
- Department of Chemical and Biomolecular Engineering, National University of Singapore, 5A Engineering Drive 1, Singapore, 117411
| | - Nitish Thakor
- Singapore Institute for Neurotechnology (SINAPSE), National University of Singapore, 28 Medical Drive, #05-COR, Singapore, 117456
| | - Lun-De Liao
- Institute of Biomedical Engineering and Nanomedicine, National Health Research Institutes, 35 Keyan Rd., Zhunan Town, Miaoli County, 35053, Taiwan
- Singapore Institute for Neurotechnology (SINAPSE), National University of Singapore, 28 Medical Drive, #05-COR, Singapore, 117456
| | - Bin Liu
- Department of Chemical and Biomolecular Engineering, National University of Singapore, 5A Engineering Drive 1, Singapore, 117411
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17
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Lotito V, Zambelli T. Approaches to self-assembly of colloidal monolayers: A guide for nanotechnologists. Adv Colloid Interface Sci 2017; 246:217-274. [PMID: 28669390 DOI: 10.1016/j.cis.2017.04.003] [Citation(s) in RCA: 114] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/21/2016] [Revised: 04/04/2017] [Accepted: 04/05/2017] [Indexed: 01/08/2023]
Abstract
Self-assembly of quasi-spherical colloidal particles in two-dimensional (2D) arrangements is essential for a wide range of applications from optoelectronics to surface engineering, from chemical and biological sensing to light harvesting and environmental remediation. Several self-assembly approaches have flourished throughout the years, with specific features in terms of complexity of the implementation, sensitivity to process parameters, characteristics of the final colloidal assembly. Selecting the proper method for a given application amidst the vast literature in this field can be a challenging task. In this review, we present an extensive classification and comparison of the different techniques adopted for 2D self-assembly in order to provide useful guidelines for scientists approaching this field. After an overview of the main applications of 2D colloidal assemblies, we describe the main mechanisms underlying their formation and introduce the mathematical tools commonly used to analyse their final morphology. Subsequently, we examine in detail each class of self-assembly techniques, with an explanation of the physical processes intervening in crystallization and a thorough investigation of the technical peculiarities of the different practical implementations. We point out the specific characteristics of the set-ups and apparatuses developed for self-assembly in terms of complexity, requirements, reproducibility, robustness, sensitivity to process parameters and morphology of the final colloidal pattern. Such an analysis will help the reader to individuate more easily the approach more suitable for a given application and will draw the attention towards the importance of the details of each implementation for the final results.
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18
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Wang L, Liu Z, Li Z, Zhang Y, Li H, Yi X, Wang J, Wang G, Li J. Nanostructure nitride light emitting diodes via the Talbot effect using improved colloidal photolithography. NANOSCALE 2017; 9:7021-7026. [PMID: 28537630 DOI: 10.1039/c7nr01586k] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We report here a new approach of Talbot effect based colloidal photolithography for fabricating nanostructure light emitting diodes (LEDs). By employing a rigid metal nanohole array template (RDT) as the diffraction grating and a polysiloxane-based spin on dielectric (SOD) as the thickness-controllable spacer layer, various InGaN/GaN nanostructure LEDs have been fabricated. Three-dimensional finite-difference time-domain (3D-FDTD) simulations have been conducted to verify the proposed approach. Photoluminescence (PL) and time-resolved photoluminescence (TRPL) have been performed to investigate the optical properties of the obtained nanostructure LEDs. Our report shows significance in fabricating two dimensional (2D) functional nanostructures and understanding the optical properties of various nanostructure InGaN/GaN LEDs.
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Affiliation(s)
- Liancheng Wang
- College of Mechanical and Electrical Engineering, Central South University, Changsha, Hunan 410083, China and Semiconductor Lighting Technology and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. and Mind Star (Beijing) Technology Co. Ltd., Zhongguancun South Street, Haidian District, No. 45 Hing Fat Building 1001, Beijing 100872, China
| | - Zhiqiang Liu
- Semiconductor Lighting Technology and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. and College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China
| | - Zhi Li
- Semiconductor Lighting Technology and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
| | - Yiyun Zhang
- Semiconductor Lighting Technology and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
| | - Hongjian Li
- Department of Materials Science and Engineering, University of California, Santa Barbara, Santa Barbara, California 93106, USA
| | - Xiaoyan Yi
- Semiconductor Lighting Technology and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. and College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China
| | - Junxi Wang
- Semiconductor Lighting Technology and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. and College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China
| | - Guohong Wang
- Semiconductor Lighting Technology and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. and College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China
| | - Jinmin Li
- Semiconductor Lighting Technology and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. and College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China
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19
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Shen J, Zhang D, Wang Y, Gan Y. Crystallographic and topographical evolutions of a cylinder patterned sapphire substrate etched with a sulfuric acid and phosphoric acid mixture: an SEM and AFM study. CrystEngComm 2017. [DOI: 10.1039/c7ce01506b] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
Abstract
Using cylinders as a model system, the full spectrum of crystallographic and topographical evolutions of patterned sapphire substrates is exhibited.
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Affiliation(s)
- Jian Shen
- School of Chemistry and Chemical Engineering
- Harbin Institute of Technology
- Harbin 150001
- China
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage
| | - Dan Zhang
- School of Chemistry and Chemical Engineering
- Harbin Institute of Technology
- Harbin 150001
- China
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage
| | - You Wang
- Key Laboratory of Micro-Systems and Micro-Structures Manufacturing
- Ministry of Education
- Harbin Institute of Technology
- Harbin 150001
- China
| | - Yang Gan
- School of Chemistry and Chemical Engineering
- Harbin Institute of Technology
- Harbin 150001
- China
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage
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20
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Wu W, Mao H, Han X, Xu J, Wang W. Fabrication and characterization of SiO2/Si heterogeneous nanopillar arrays. NANOTECHNOLOGY 2016; 27:305301. [PMID: 27319739 DOI: 10.1088/0957-4484/27/30/305301] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
This work presents arrays of heterogeneous nanopillars stacked with Si bodies and SiO2 heads for biomedical applications. Novel crossed and overlapped spacer techniques are proposed to fabricate the nanopillar arrays in controllable dimensions. For the nanopillars in the arrays, the minimum spacing, body diameter and head tip-radius reach 100 nm, 23 nm and 11 nm, respectively. The maximum height is 1.2 μm. In addition, because of hydrophilic/hydrophobic selectivity between the SiO2 heads and Si bodies, localized nanoliter water-droplet condensing, fluorescein solution extraction and protein capturing are observed on the SiO2 pillar heads. These experiments demonstrate the great potential of heterogeneous nanopillars in biomedical applications.
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Affiliation(s)
- Wengang Wu
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Institute of Microelectronics, Peking University, Beijing 100871, People's Republic of China. Innovation Center for MicroNanoelectronics and Integrated System, Beijing 100871, People's Republic of China
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21
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Xiong Z, Wei T, Zhang Y, Wang J, Li J. Multiple-exposure colloidal lithography for enhancing light output of GaN-based light-emitting diodes by patterning Ni/Au electrodes. OPTICS EXPRESS 2016; 24:A44-A51. [PMID: 26832596 DOI: 10.1364/oe.24.000a44] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Ni/Au electrodes with single, twined and triplet hole array patterns light-emitting diodes have been fabricated by multiple-exposure colloidal lithography. It is found that 45.6%, 83.6% and 15.5% improvement in light output at 350 mA has been achieved by patterning Ni/Au electrodes with single, twined, triplet hole arrays. In addition, patterned Ni/Au LEDs possess much larger view angles than non-patterned ones due to scattering effects of light around the holes, especially for triplet hole array patterned Ni/Au LEDs. Our proposed method for fabricating multiple holes structure would be very promising to improve light output power of LEDs when using advanced electrodes.
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22
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Zhang L, Xiong Z, Shan L, Zheng L, Wei T, Yan Q. Layer-by-Layer Approach to (2+1)D Photonic Crystal Superlattice with Enhanced Crystalline Integrity. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2015; 11:4910-4921. [PMID: 26179658 DOI: 10.1002/smll.201501026] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2015] [Revised: 06/02/2015] [Indexed: 05/28/2023]
Abstract
Large-area polystyrene (PS) colloidal monolayers with high mechanical strength are created by a combination of the air/water interface self-assembly and the solvent vapor annealing technique. Layer-by-layer (LBL) stacking of these colloidal monolayers leads to the formation of (2+1)D photonic crystal superlattice with enhanced crystalline integrity. By manipulating the diameter of PS spheres and the repetition period of the colloidal monolayers, flexible control in structure and stop band position of the (2+1)D photonic crystal superlattice has been realized, which may afford new opportunities for engineering photonic bandgap materials. Furthermore, an enhancement of 97.3% on light output power of a GaN-based light emitting diode is demonstrated when such a (2+1)D photonic crystal superlattice employed as a back reflector. The performance enhancement is attributed to the photonic bandgap enhancement and good angle-independence of the (2+1)D photonic crystal superlattice.
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Affiliation(s)
- Lijing Zhang
- Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Zhuo Xiong
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Liang Shan
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Lu Zheng
- Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Tongbo Wei
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Qingfeng Yan
- Department of Chemistry, Tsinghua University, Beijing, 100084, China
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23
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Mao P, Mahapatra AK, Chen J, Chen M, Wang G, Han M. Fabrication of Polystyrene/ZnO Micronano Hierarchical Structure Applied for Light Extraction of Light-Emitting Devices. ACS APPLIED MATERIALS & INTERFACES 2015; 7:19179-19188. [PMID: 26280448 DOI: 10.1021/acsami.5b04911] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Polystyrene(PS)/ZnO micronano hierarchical structures were fabricated on a flat surface by depositing ZnO nanoparticles from a cluster beam at oblique incidence on the surface predeposited with PS microspheres. The hierarchical structure was composed of submicron-sized PS particle layers covered with dense films of columnar ZnO nanoparticle piles separated with nanoscale pores. It was demonstrated that the cooperative effect that combines the microlens function of the PS microspheres and the enhanced Rayleigh scattering of the ZnO nanoparticle porous layers can be used to greatly reduce the total internal reflection at the medium-air interface. The PS/ZnO hierarchical structures were fabricated on the surface of GaN-based light-emitting diode (LED) chips to enhance the light-extraction efficiency. A 77.7% improvement on the light-output power was realized, which was much greater than that obtained with the PS microstructures alone.
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Affiliation(s)
- Peng Mao
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University , Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Amulya krishna Mahapatra
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University , Nanjing 210093, China
| | - Jing Chen
- College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications , Nanjing 210046, China
| | - Minrui Chen
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University , Nanjing 210093, China
| | - Guanghou Wang
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University , Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Min Han
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University , Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
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24
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Peng W, Rupich SM, Shafiq N, Gartstein YN, Malko AV, Chabal YJ. Silicon Surface Modification and Characterization for Emergent Photovoltaic Applications Based on Energy Transfer. Chem Rev 2015; 115:12764-96. [DOI: 10.1021/acs.chemrev.5b00085] [Citation(s) in RCA: 74] [Impact Index Per Article: 7.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Affiliation(s)
- Weina Peng
- Department of Materials
Science and Engineering and ‡Department of Physics, University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Sara M. Rupich
- Department of Materials
Science and Engineering and ‡Department of Physics, University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Natis Shafiq
- Department of Materials
Science and Engineering and ‡Department of Physics, University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Yuri N. Gartstein
- Department of Materials
Science and Engineering and ‡Department of Physics, University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Anton V. Malko
- Department of Materials
Science and Engineering and ‡Department of Physics, University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Yves J. Chabal
- Department of Materials
Science and Engineering and ‡Department of Physics, University of Texas at Dallas, Richardson, Texas 75080, United States
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25
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Li KH, Cheung YF, Choi HW. Whispering gallery mode lasing in optically isolated III-nitride nanorings. OPTICS LETTERS 2015; 40:2564-2567. [PMID: 26030558 DOI: 10.1364/ol.40.002564] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
III-nitride nanorings fabricated from a combination of hybrid-nanosphere-lithography and laser lift-off processes is demonstrated. Being formed on an interfacial metallic layer optically coupling between the optical ring and its substrate is eliminated, maximizing optical confinement of whispering gallery resonant mode within the ring cavity. The tapered cross-sectional profile also promotes coupling of emitted light into resonant modes. Optically pumped lasing with a dominant peak at 421.5 nm is observed at room temperature, with threshold energy density of ∼6.5 mJ/cm2. Etch-induced sidewall roughness causes scattering of light at the interface to diminish confinement, and is also responsible for the mode-splitting effect according to finite-difference time-domain simulations.
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26
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Mao P, Xu M, Chen J, Xie B, Song F, Han M, Wang G. Dual enhancement of light extraction efficiency of flip-chip light-emitting diodes with multiple beveled SiC surface and porous ZnO nanoparticle layer coating. NANOTECHNOLOGY 2015; 26:185201. [PMID: 25865342 DOI: 10.1088/0957-4484/26/18/185201] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
A porous ZnO nanoparticle layer coating composed of columnar ZnO nanoparticle piles and a multiple-beveled substrate was used to enhance the light extraction efficiency of GaN-based flip-chip light-emitting diodes (FC-LEDs), which were grown on high-purity SiC substrates. The SiC substrate was multiple-beveled by fabricating an 'X' pattern on the face of it, followed by a deposition of a porous ZnO nanoparticle layer on the 'X'-patterned surface. A porous ZnO nanoparticle layer was fabricated with gas phase cluster beam deposition in a glancing incidence. The incident angular-resolved light transmission of the ZnO nanostructure beyond the critical angle of total internal reflection (TIR) was greatly enhanced. The light output power of the LED was improved by nearly 60% compared to the original planar GaN-based LED on an SiC substrate (FC-SLED), which contained a significant enhancement supplemental to the 18% electroluminescence (EL) enhancement realized with the 'X'-pattern beveling. We demonstrated that a dual enhancement of light extraction efficiency was achieved by using the hierarchical surface consisting of microscale textures (the multiple-beveled surfaces) and nanoscale structures (the ZnO nanoparticle layers).
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Affiliation(s)
- Peng Mao
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China. Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
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27
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Xie Z, Li L, Liu P, Zheng F, Guo L, Zhao Y, Jin L, Li T, Gu Z. Self-assembled coffee-ring colloidal crystals for structurally colored contact lenses. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2015; 11:926-930. [PMID: 25331232 DOI: 10.1002/smll.201402071] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2014] [Revised: 08/21/2014] [Indexed: 06/04/2023]
Abstract
A circlular structural-colored contact lens is reported, which is fabricated by replicating self-assembled colloidal photonic crystal templates. The structural-colored contact lenses not only display variable and brilliant color under light illumination, but also avoid the addition of any colorants to the hydrogel lenses and prevent the potential harm posed by traditional colored contact lenses.
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Affiliation(s)
- Zhuoying Xie
- State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing, 210096, China
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28
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Xue F, Asher SA, Meng Z, Wang F, Lu W, Xue M, Qi F. Two-dimensional colloidal crystal heterostructures. RSC Adv 2015. [DOI: 10.1039/c4ra16006a] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
A simple method to fabricate colloidal crystal heterostructures based on a two-dimensional colloidal crystal was developed.
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Affiliation(s)
- Fei Xue
- School of Chemical Engineering and Environment
- Beijing Institute of Technology
- Beijing
- China
| | | | - Zihui Meng
- School of Chemical Engineering and Environment
- Beijing Institute of Technology
- Beijing
- China
| | - Fengyan Wang
- School of Chemical Engineering and Environment
- Beijing Institute of Technology
- Beijing
- China
| | - Wei Lu
- School of Chemical Engineering and Environment
- Beijing Institute of Technology
- Beijing
- China
| | - Min Xue
- School of Chemical Engineering and Environment
- Beijing Institute of Technology
- Beijing
- China
| | - Fenglian Qi
- School of Chemical Engineering and Environment
- Beijing Institute of Technology
- Beijing
- China
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29
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Armstrong E, Osiak M, Geaney H, Glynn C, O'Dwyer C. 2D and 3D vanadium oxide inverse opals and hollow sphere arrays. CrystEngComm 2014. [DOI: 10.1039/c4ce01797h] [Citation(s) in RCA: 27] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2023]
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