Hybrid PbS Quantum-Dot-in-Perovskite for High-Efficiency Perovskite Solar Cell

Superwetting Nanofluids of NiOx-Nanocrystals/CsBr Solution for Fabricating Quality NiOx-CsPbBr3 Gradient Hybrid Film in Carbon-Based Perovskite Solar Cells

The wettability of precursor solution on substrates is the critical factor for fabricating quality film. In this work, superwetting nanofluids (NFs) of non-stoichiometric nickel oxide (NiOx) nanocrystals (NCs)-CsBr solution are first utilized to fabricate quality NiOx-CsPbBr3 hybrid film with gradient-distributed NiOx NCs in the upper part for constructing hole transport ladder in carbon-based perovskite solar cells (C-PSCs). As anticipated, the crystalline properties (improved crystalline grain diameters and reduced impurity phase) and hole extraction/transport of the NiOx-CsPbBr3 hybrid film are improved after incorporating NiOx NCs into CsPbBr3. This originates from the superb wettability of NiOx-CsBr NFs on substrates and the excellent hole-transport properties of NiOx. Consequently, the C-PSCs with the structure of FTO/SnO2/NiOx-CsPbBr3/C displays a power conversion efficiency of 10.07%, resulting in a 23.6% improvement as compared with the pristine CsPbBr3 cell. This work opens up a promising strategy to improve the absorber layer in PSCs by incorporating NCs into perovskite layers through the use of the superwettability of NFs and by composition gradient engineering.

Enhancing the performance of PbS:CsPbBr3 bulk-heterojunction photodetectors by treating with imidazolium-based ionic liquids

All-inorganic lead halide perovskites and quantum dots (QDs) have gained significant attention since their emergence, owing to their immense potential for applications in optoelectronic devices. Here, enhanced-performance broadband photodetectors based on the bulk-heterostructure of a CsPbBr3 perovskite and PbS colloidal quantum dots (CQDs) are presented, and 1-ethyl-3-methylimidazolium tetrafluoroborate ([EMIM]BF4) ionic liquids as a dual-purpose additive were introduced in the blended film to regulate the surface of QDs by facilitating surface passivation, adjusting energy levels, and coupling with longer alkyl chains as compared to iodide ions (I-). As a result, a superior-quality bulk-heterostructure based photodetector with long-term stability was obtained, showing outstanding performance in photodetection across the visible to near-infrared wavelength range, demonstrating a high photoresponsivity of 22.4 A W-1 with a response time of 16.2 ms and a specific detectivity of 1.58 × 1014 Jones under 405 nm illumination. Thus, this work provides a novel modification strategy for PbS:CsPbBr3 as a promising material for novel optoelectronics.

Robust and Efficient Carbon-Based Planar Perovskite Solar Cells with a CsPbBr3-MoS2 Hybrid Absorber

Optical response improvement and hole transport/extraction enhancement are critical to enhancing the power conversion efficiency (PCE) of carbon electrode-based perovskite solar cells (C-PSCs) with an absorber of CsPbBr3. In this study, a multifunctional optimization method by embedding MoS2 nanosheets in CsPbBr3 bulk to construct a perovskite-nanosheet hybrid structure was presented. A CsPbBr3-MoS2 hybrid film was fabricated by two-step spin-coating the precursor solutions of PbBr2 and CsBr-MoS2 under an ambient atmosphere, where the aqueous solution with highly distributed MoS2 nanosheets was applied as a solvent of the hybrid precursor solution. MoS2 nanosheets were utilized as a p-type modifier and extra absorber to hybridize with CsPbBr3 for improving the CsPbBr3-carbon interface and light absorption ability of the perovskite layer. As expected, the optical response ability, absorber film quality, and carrier separation/extraction/transport properties of C-PSCs were enhanced significantly by embedding MoS2 nanosheets in CsPbBr3 film, which resulted in enhanced C-PSCs properties. Finally, the C-PSCs with the structure of FTO/SnO2/CsPbBr3-MoS2/C presented a champion PCE of 7.87% (active area: 1 cm2), which demonstrated excellent ambient and operational stability. This study provides an efficient method for constructing ultrastable C-PSCs by hybridizing perovskite and nanosheets.

Sub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots Incorporation

By taking advantage of the outstanding intrinsic optoelectronic properties of perovskite-based photovoltaic materials, together with the strong near-infrared (NIR) absorption and electronic confinement in PbS quantum dots (QDs), sub-bandgap photocurrent generation is possible, opening the way for solar cell efficiencies surpassing the classical limits. The present study shows an effective methodology for the inclusion of high densities of colloidal PbS QDs in a MAPbI3 (methylammonium lead iodide) perovskite matrix as a means to enhance the spectral window of photon absorption of the perovskite host film and allow photocurrent production below its bandgap. The QDs were introduced in the perovskite matrix in different sizes and concentrations to study the formation of quantum-confined levels within the host bandgap and the potential formation of a delocalized intermediate mini-band (IB). Pronounced sub-bandgap (in NIR) absorption was optically confirmed with the introduction of QDs in the perovskite. The consequent photocurrent generation was demonstrated via photoconductivity measurements, which indicated IB establishment in the films. Despite verifying the reduced crystallinity of the MAPbI3 matrix with a higher concentration and size of the embedded QDs, the nanostructured films showed pronounced enhancement (above 10-fold) in NIR absorption and consequent photocurrent generation at photon energies below the perovskite bandgap.

Grain boundary defects passivation by bridging diammonium toward stable and efficient perovskite solar cells

The grain boundary defects of polycrystalline perovskite could induce severe carrier recombination loss to restrict the photovoltaic and stability advancement of perovskite-based solar cells (PSCs). Inserting fixed molar ratio organic cations spacers into halide perovskite slabs to reduce the dimension of the crystal structure is still limited in finding a compromise of efficiency and stability for the widened bandgap and increasing barriers for carrier transport. Here, we select a direct additive bridging engineering to introduce a rationally designed organic amine salt 1,4-Benzene diammonium iodide (BDAI₂) with ammonium group on both terminals of the benzene ring to passivate the grain boundary and interface defects of perovskite. Bridging diammonium could ameliorate the interface contact and achieve electrostatic interactions with negatively charged traps (such as uncoordinated I^-, PbI₃^-, and methylammonium vacancies) to inhibit cation migration, reduce halogen ion vacancy, and then suppress trap-induced recombination in perovskite. As a result, the bridging diammonium could improve the power conversion efficiency (PCE) from 19.86% to 21.91%. This study highlights the importance of rational bridging diammonium for perovskite surface modification and passivation to boost photovoltaic performance and stability.

Spontaneous Formation of Heterostructured Perovskite Films for Photovoltaic Application

Perovskite solar cells (PSCs) are the one of most promising photovoltaic technologies that can be achieved by a simple solution process. At the current stage, the key issues concern further improvements in efficiency and operational lifetime. Constructing a self-assembled perovskite structure with manipulated chemical and physical properties is a useful and effective strategy to solve these problems. Herein, we review the basic principles of and recent progress in the spontaneous formation behavior of heterostructured perovskite thin films. This concept provides insightful clues for the design and fabrication of stable and efficient PSCs for next-generation photovoltaics.

The current state of the art in internal additive materials and quantum dots for improving efficiency and stability against humidity in perovskite solar cells

The remarkable optoelectronic capabilities of perovskite structures enable the achievement of astonishingly high-power conversion efficiencies on the laboratory scale. However, a critical bottleneck of perovskite solar cells is their sensitivity to the surrounding humid environment affecting drastically their long-term stability. Internal additive materials together with surface passivation, polymer-mixed perovskite, and quantum dots, have been investigated as possible strategies to enhance device stability even in unfavorable conditions. Quantum dots (QDs) in perovskite solar cells enable power conversion efficiencies to approach 20%, making such solar cells competitive to silicon-based ones. This mini-review summarized the role of such QDs in the perovskite layer, hole-transporting layer (HTL), and electron-transporting layer (ETL), demonstrating the continuous improvement of device efficiencies.

Heteroepitaxy of Large-Area, Monocrystalline Lead Halide Perovskite Films on Gallium Arsenide

Lead halide perovskite materials have been emerging as promising candidates for high-performance optoelectronic devices. Significant efforts have sought to realize monocrystalline perovskite films on a large scale. Here, we epitaxially grow monocrystalline methylammonium lead tribromide (MAPbBr₃) films on lattice-matched gallium arsenide (GaAs) substrates on a centimeter scale. In particular, a solution-processed lead(II) sulfide (PbS) layer provides a lattice-matched and chemical protective interface for the solid-gas reaction to form MAPbBr₃ films on GaAs. Structure characterizations identify the crystal orientations in the trilayer MAPbBr₃/PbS/GaAs epistructure and confirm the monocrystalline nature of MAPbBr₃ on PbS/GaAs. The dynamic evolution of surface morphologies during the growth indicates a two-step epitaxial process. These fundamental understandings and practical growth techniques offer a viable guideline to approach high-quality perovskite films for previously inaccessible applications.

Balanced change in crystal unit cell volume and strain leads to stable halide perovskite with high guanidinium content

Up-to-date studies propose that strain in halide perovskites is one of the key factors that determine a device's efficiency and stability. Here, we show a systematic approach to characterize the phenomenon in the standard methylammonium lead iodine (MAPbI3) perovskite system by: (i) the substitution of some MA by guanidinium (Gu); (ii) the incorporation of PbS quantum dot (QD) additives and (iii) addition of both Gu and PbS at the same time. We studied the effect of these incorporations on the film strain and crystal cell unit volume, and on the solar cell device efficiency and stability. Gu cations and PbS QDs affect the strain, the former due to the relatively large dimensions of Gu, and the latter due to the lattice matching parameters. With the control of Gu and PbS QD content, higher performance and longer solar cell stability are obtained. We demonstrated that the presence of Gu and PbS QDs alters the structure of perovskite, in terms of modification of the unit cell volume and strain. The greater size of Gu cations produces a MAPbI3 unit cell volume expansion as Gu is incorporated, modifying the strain from compressive to tensile. PbS QDs aid Gu incorporation, producing a unit cell volume expansion. In the case of 15% mol Gu incorporation, the addition of PbS QDs modifies strain from compressive to tensile, limiting the deleterious effect. At the same time the unit cell volume is less affected, increasing the solar cell stability. Our work shows that the control of compressive strain and the unit cell volume expansion lead to a 50% increase in T 80, the time in which the PCE decreases to 80% of its original value, increasing the T 80 value from 120 to 187 days under air conditions. Moreover it highlights the importance of exploiting not only the control of the strain induced by internal component, the cation, but also the strain induced by the external component, the QD, associated instead with critical volume variation of metastable perovskite unit cell volume.

Selection, Preparation and Application of Quantum Dots in Perovskite Solar Cells

As the third generation of new thin-film solar cells, perovskite solar cells (PSCs) have attracted much attention for their excellent photovoltaic performance. Today, PSCs have reported the highest photovoltaic conversion efficiency (PCE) of 25.5%, which is an encouraging value, very close to the highest PCE of the most widely used silicon-based solar cells. However, scholars have found that PSCs have problems of being easily decomposed under ultraviolet (UV) light, poor stability, energy level mismatch and severe hysteresis, which greatly limit their industrialization. As unique materials, quantum dots (QDs) have many excellent properties and have been widely used in PSCs to address the issues mentioned above. In this article, we describe the application of various QDs as additives in different layers of PSCs, as luminescent down-shifting materials, and directly as electron transport layers (ETL), light-absorbing layers and hole transport layers (HTL). The addition of QDs optimizes the energy level arrangement within the device, expands the range of light utilization, passivates defects on the surface of the perovskite film and promotes electron and hole transport, resulting in significant improvements in both PCE and stability. We summarize in detail the role of QDs in PSCs, analyze the perspective and associated issues of QDs in PSCs, and finally offer our insights into the future direction of development.

Dual Effect of Superhalogen Ionic Liquids Ensures Efficient Carrier Transport for Highly Efficient and Stable Perovskite Solar Cells

Defect accumulation and nonradiative recombination at the interface of the electron-transport layer (ETL) and the photosensitive layer are inevitable obstacles to efficient and stable perovskite solar cells (PSCs). Herein, we reported a dual-effect interface modification strategy that employs potassium tetrafluoroborate (KBF₄) molecules for the simultaneous passivation of the SnO₂/perovskite interface and perovskite grain boundaries. The introduced highly electronegative BF₄^- enriched at the SnO₂ surface and the chemical bond interaction between them can effectively reduce the hydroxyl (-OH) group defects on the surface of SnO₂, improve electron mobility, and reduce nonradiative recombination. Meanwhile, partial K⁺ diffuses into the grain boundaries, causing the halogen ions to be uniformly distributed in the perovskite film and resulting in better crystallinity. Therefore, the performance of the experimental device was improved from 20.34 to 22.90% compared with the reference device, with a high electrical performance (J_SC = 25.1 mA cm^-2, V_OC = 1.137 V). In particular, the unencapsulated target PSCs retained 85% of their original PCE after aging for 1000 h under ambient conditions (70 ± 10% RH) in the dark.

The Annealing Effect at Different Temperatures for Organic-Inorganic Perovskite Quantum Dots

After the preparation of inorganic perovskite cesium lead iodide quantum dots (CsPbI3 QD) by ligand-assisted reprecipitation (LARP), CsPbI3 QD was added to the organic perovskite methylamine lead triiodide (CH3NH3PbI3; MAPbI3) to successfully form composite perovskite film. To obtain better perovskite quantum dot (PQD) crystal characteristics, this research used different annealing temperatures to discuss the crystallinity changes of perovskite quantum dots (PQD). Through X-ray diffraction (XRD) analysis, it was found that the preferred peak (110) of MAPbI3 had maximum peak intensity when the annealing temperature increased to 120 °C. Based on the measurement results of PQD’s Ultraviolet-Visible spectrum, it was shown that the maximum absorption area was obtained at the wavelength of 350 nm~750 nm at the annealing temperature 120 °C. From the scanning electron microscope (SEM) measurement, it was found that the grain size was the largest at the annealing temperature 120 °C, and the grain size was 60.2 nm. The best crystallization characteristics of PQD were obtained at the annealing temperature 120 °C.

Colloidal Inorganic Ligand-Capped Nanocrystals: Fundamentals, Status, and Insights into Advanced Functional Nanodevices

Colloidal nanocrystals (NCs) are intriguing building blocks for assembling various functional thin films and devices. The electronic, optoelectronic, and thermoelectric applications of solution-processed, inorganic ligand (IL)-capped colloidal NCs are especially promising as the performance of related devices can substantially outperform their organic ligand-capped counterparts. This in turn highlights the significance of preparing IL-capped NC dispersions. The replacement of initial bulky and insulating ligands capped on NCs with short and conductive inorganic ones is a critical step in solution-phase ligand exchange for preparing IL-capped NCs. Solution-phase ligand exchange is extremely appealing due to the highly concentrated NC inks with completed ligand exchange and homogeneous ligand coverage on the NC surface. In this review, the state-of-the-art of IL-capped NCs derived from solution-phase inorganic ligand exchange (SPILE) reactions are comprehensively reviewed. First, a general overview of the development and recent advancements of the synthesis of IL-capped colloidal NCs, mechanisms of SPILE, elementary reaction principles, surface chemistry, and advanced characterizations is provided. Second, a series of important factors in the SPILE process are offered, followed by an illustration of how properties of NC dispersions evolve after ILE. Third, surface modifications of perovskite NCs with use of inorganic reagents are overviewed. They are necessary because perovskite NCs cannot withstand polar solvents or undergo SPILE due to their soft ionic nature. Fourth, an overview of the research progresses in utilizing IL-capped NCs for a wide range of applications is presented, including NC synthesis, NC solid and film fabrication techniques, field effect transistors, photodetectors, photovoltaic devices, thermoelectric, and photoelectrocatalytic materials. Finally, the review concludes by outlining the remaining challenges in this field and proposing promising directions to further promote the development of IL-capped NCs in practical application in the future.

Bio-inspired strategies for next-generation perovskite solar mobile power sources

Smart electronic devices are becoming ubiquitous due to many appealing attributes including portability, long operational time, rechargeability and compatibility with the user-desired form factor. Integration of mobile power sources (MPS) based on photovoltaic technologies with smart electronics will continue to drive improved sustainability and independence. With high efficiency, low cost, flexibility and lightweight features, halide perovskite photovoltaics have become promising candidates for MPS. Realization of these photovoltaic MPS (PV-MPS) with unconventionally extraordinary attributes requires new 'out-of-box' designs. Natural materials have provided promising designing solutions to engineer properties under a broad range of boundary conditions, ranging from molecules, proteins, cells, tissues, apparatus to systems in animals, plants, and humans optimized through billions of years of evolution. Applying bio-inspired strategies in PV-MPS could be biomolecular modification on crystallization at the atomic/meso-scale, bio-structural duplication at the device/system level and bio-mimicking at the functional level to render efficient charge delivery, energy transport/utilization, as well as stronger resistance against environmental stimuli (e.g., self-healing and self-cleaning). In this review, we discuss the bio-inspired/-mimetic structures, experimental models, and working principles, with the goal of revealing physics and bio-microstructures relevant for PV-MPS. Here the emphasis is on identifying the strategies and material designs towards improvement of the performance of emerging halide perovskite PVs and strategizing their bridge to future MPS.

Light management with quantum nanostructured dots-in-host semiconductors

Insightful knowledge on quantum nanostructured materials is paramount to engineer and exploit their vast gamut of applications. Here, a formalism based on the single-band effective mass equation was developed to determine the light absorption of colloidal quantum dots (CQDs) embedded in a wider bandgap semiconductor host, employing only three parameters (dots/host potential barrier, effective mass, and QD size). It was ascertained how to tune such parameters to design the energy level structure and consequent optical response. Our findings show that the CQD size has the biggest effect on the number and energy of the confined levels, while the potential barrier causes a linear shift of their values. While smaller QDs allow wider energetic separation between levels (as desired for most quantum-based technologies), the larger dots with higher number of levels are those that exhibit the strongest absorption. Nevertheless, it was unprecedently shown that such quantum-enabled absorption coefficients can reach the levels (10⁴-10⁵cm^-1) of bulk semiconductors.

Boosting Long-Term Stability of Pure Formamidinium Perovskite Solar Cells by Ambient Air Additive Assisted Fabrication

Due to the high industrial interest for perovskite-based photovoltaic devices, there is an urgent need to fabricate them under ambient atmosphere, not limited to low relative humidity (RH) conditions. The formamidinium lead iodide (FAPI) perovskite α-black phase is not stable at room temperature and is challenging to stabilize in an ambient environment. In this work, we show that pure FAPI perovskite solar cells (PSCs) have a dramatic increase of device long-term stability when prepared under ambient air compared to FAPI PSCs made under nitrogen, both fabricated with N-methylpyrrolidone (NMP). The T 80 parameter, the time in which the efficiency drops to 80% of the initial value, increases from 21 (in N2) to 112 days (in ambient) to 145 days if PbS quantum dots (QDs) are introduced as additives in air-prepared FAPI PSCs. Furthermore, by adding methylammonium chloride (MACl) the power conversion efficiency (PCE) reaches 19.4% and devices maintain 100% of the original performance for at least 53 days. The presence of Pb-O bonds only in the FAPI films prepared in ambient conditions blocks the propagation of α- to δ-FAPI phase conversion. Thus, these results open the way to a new strategy for the stabilization in ambient air toward perovskite solar cells commercialization.

Current status on synthesis, properties and applications of CsPbX3(X = Cl, Br, I) perovskite quantum dots/nanocrystals

The quantum confinement effect and interesting optical properties of cesium lead halide (CsPbX₃; X = Cl, Br, I) perovskite quantum dots (QDs) and nanocrystals (NCs) have given a new horizon to lighting and photonic applications. Given the exponential rate at which scientific results on CsPbX₃NCs are published in the last few years, it can be expected that the research in CsPbX₃NCs will further receive increasing scientific interests in the near future and possibly lead to great commercial opportunities to realize these materials based practical applications. With the rapid progress in the single-photon emitting CsPbX₃QDs and NCs, practical applications of the quantum technologies such as single-photon emitting light-emitting diode, quantum lasers, quantum computing might soon be possible. But to reach at cutting edge of stable perovskite QDs/NCs, the study of fundamental insight and theoretical aspects of crystal design is yet insufficient. Even more, it has aroused many unanswered questions related to the stability, optical and electronic properties of the CsPbX₃QDs. Aim of the present review is to illustrate didactically a precise study of recent progress in the synthesis, properties and applications of CsPbX₃QDs and NCs. Critical issues that currently restrict the applicability of these QDs will be identified and advanced methodologies currently in the developing queue, to overcome the roadblock, will be presented. And finally, the prospects for future directions will be provided.

Application of quantum dots in perovskite solar cells

Perovskite solar cells (PSCs) are important candidates for next-generation thin-film photovoltaic technology due to their superior performance in energy harvesting. At present, their photoelectric conversion efficiencies (PCEs) are comparable to those of silicon-based solar cells. PSCs usually have a multi-layer structure. Therefore, they face the problem that the energy levels between adjacent layers often mismatch each other. Meanwhile, large numbers of defects are often introduced due to the solution preparation procedures. Furthermore, the perovskite is prone to degradation under ultraviolet (UV) irradiation. These problems could degrade the efficiency and stability of PSCs. In order to solve these problems, quantum dots (QDs), a kind of low-dimensional semiconductor material, have been recently introduced into PSCs as charge transport materials, interfacial modification materials, dopants and luminescent down-shifting materials. By these strategies, the energy alignment and interfacial conditions are improved, the defects are efficiently passivated, and the instability of perovskite under UV irradiation is suppressed. So the device efficiency and stability are both improved. In this paper, we overview the recent progress of QDs' utilizations in PSCs.

The Influence of Oxygen Plasma on Methylammonium Lead Iodide (MAPbI3) Film Doped with Lead Cesium Triiodide (CsPbI3)

In recent years, the study of organic-inorganic halide perovskite as an optoelectronics material has been a significant line of research, and the power conversion efficiency of solar cells based on these materials has reached 25.5%. However, defects on the surface of the film are still a problem to be solved, and oxygen plasma is one of the ways to passivate surface defects. In order to avoid destroying the methylammonium lead iodide (MAPbI₃), the influence of plasma powers on film was investigated and the cesium triiodide (CsPbI₃) quantum dots (QDs) were doped into the film. In addition, it was found that oxygen plasma can enhance the mobility and carrier concentration of the MAPbI₃ film.

Investigation of the Stability of Methylammonium Lead Iodide (MAPbI3) Film Doped with Lead Cesium Triiodide (CsPbI3) Quantum Dots under an Oxygen Plasma Atmosphere

In this study, we describe composited perovskite films based on the doping of lead cesium triiodide (CsPbI₃) quantum dots (QDs) into methylammonium lead iodide (MAPbI₃). CsPbI₃ QDs and MAPbI₃ were prepared by ligand-assisted re-precipitation and solution mixing, respectively. These films were optimized by oxygen plasma treatment, and the effect of powers from 0 to 80 W on the structural properties of the composited perovskite films is discussed. The experimental results showed that the light-harvesting ability of the films was enhanced at 20 W. The formation of the metastable state (lead(II) oxide and lead tetroxide) was demonstrated by peak differentiation-imitating. A low power enhanced the quality of the films due to the removal of organic impurities, whereas a high power caused surface damage in the films owing to the severe degradation of MAPbI₃.

CdS Induced Passivation toward High Efficiency and Stable Planar Perovskite Solar Cells

In perovskite solar cells, the halide vacancy defects on the perovskite film surface/interface will instigate charge recombination, leading to a decrease in cell performance. In this study, cadmium sulfide (CdS) has been introduced into the precursor solution to reduce the halide vacancy defects and improve the cell performance. The highest efficiency of the device reaches 21.62%. Density functional theory calculation reveals that the incorporated Cd²⁺ ions can partially replace Pb²⁺ ions, thus forming a strong Cd-I bond and effectively reducing iodide vacancy defects (V_I); at the same time, the loss of the charge recombination is significantly reduced because V_I is filled by S^2- ions. Besides, the substitution of Cd²⁺ for Pb²⁺ could increase the generation of PbI₂, which can further passivate the grain boundary. Therefore, the stability of the cells, together with the efficiency of the power conversion efficiencies (PCEs), is also improved, maintaining 87.5% of its initial PCEs after being irradiated over 410 h. This work provides a very effective strategy to passivate the surface/interface defects of perovskite films for more efficient and stable optoelectronic devices.

Establishing Multifunctional Interface Layer of Perovskite Ligand Modified Lead Sulfide Quantum Dots for Improving the Performance and Stability of Perovskite Solar Cells

While organic-inorganic halide perovskite solar cells (PSCs) show great potential for realizing low-cost and easily fabricated photovoltaics, the unexpected defects and long-term stability against moisture are the main issues hindering their practical applications. Herein, a strategy is demonstrated to address the main issues by introducing lead sulfide quantum dots (QDs) on the perovskite surface as the multifunctional interface layer on perovskite film through establishing perovskite as the ligand on PbS QDs. Meanwhile, the multifunctions are featured in three aspects including the strong interactions of PbS QDs with perovskites particularly at the grain boundaries favoring good QDs coverage on perovskites for ultimate smooth morphology; an inhibition of iodide ions mobilization by the strong interaction between iodide and the incorporated QDs; and the reduction of the dangling bonds of Pb²⁺ by the sulfur atoms of PbS QDs. Finally, the device performances are highly improved due to the reduced defects and non-radiative recombination. The results show that both open-circuit voltage and fill factor are significantly improved to the high values of 1.13 V and 80%, respectively in CH₃ NH₃ PbI₃ -based PSCs, offering a high efficiency of 20.64%. The QDs incorporation also enhances PSCs' stability benefitting from the induced hydrophobic surface and suppressed iodide mobilization.

Broad-Band Photodetectors Based on Copper Indium Diselenide Quantum Dots in a Methylammonium Lead Iodide Perovskite Matrix

Low-temperature solution-processed methylammonium lead iodide (MAPbI₃) crystalline films have shown outstanding performance in optoelectronic devices. However, their high dark current and high noise equivalent power prevent their application in broad-band photodetectors. Here, we applied a facile solution-based antisolvent strategy to fabricate a hybrid structure of CuInSe₂ quantum dots (CISe QDs) embedded into a MAPbI₃ matrix, which not only enhances the photodetector responsivity, showing a large on/off ratio of 10⁴ at 2 V bias compared with the bare perovskite films, but also significantly (for over 7 days) improves the device stability, with hydrophobic ligands on the CuInSe₂ QDs acting as a barrier against the uptake of environmental moisture. MAPbI₃/CISe QD-based lateral photodetectors exhibit high responsivities of >0.5 A/W and 10.4 mA/W in the visible and near-infrared regions, respectively, partly because of the formation of a type II interface between the respective semiconductors but most significantly because of the efficient trap-state passivation of the perovskite grain surfaces, and the reduction in the twinning-induced trap density, which stems from both CISe QDs and their organic ligands. A large specific detectivity of 2.2 × 10¹² Jones at 525 nm illumination (1 μW/cm²), a fast fall time of 236 μs, and an extremely low noise equivalent power of 45 fW/Hz^1/2 have been achieved.

Ligand-Length Modification in CsPbBr3 Perovskite Nanocrystals and Bilayers with PbS Quantum Dots for Improved Photodetection Performance

Nanocrystals surface chemistry engineering offers a direct approach to tune charge carrier dynamics in nanocrystals-based photodetectors. For this purpose, we have investigated the effects of altering the surface chemistry of thin films of CsPbBr₃ perovskite nanocrystals produced by the doctor blading technique, via solid state ligand-exchange using 3-mercaptopropionic acid (MPA). The electrical and electro-optical properties of photovoltaic and photoconductor devices were improved after the MPA ligand exchange, mainly because of a mobility increase up to 5 × 10⁻³cm2/Vs. The same technology was developed to build a tandem photovoltaic device based on a bilayer of PbS quantum dots (QDs) and CsPbBr₃ perovskite nanocrystals. Here, the ligand exchange was successfully carried out in a single step after the deposition of these two layers. The photodetector device showed responsivities around 40 and 20 mA/W at visible and near infrared wavelengths, respectively. This strategy can be of interest for future visible-NIR cameras, optical sensors, or receivers in photonic devices for future Internet-of-Things technology.

All-solution-processed UV-IR broadband trilayer photodetectors with CsPbBr3 colloidal nanocrystals as carriers-extracting layer

Colloidal quantum dots (CQDs) are very promising nanomaterials for optoelectronics due to their tunable bandgap and quantum confinement effect. All-inorganic CsPbX₃ (X = Br, Cl and I) perovskite nanocrystals (NCs) have attracted enormous interests owing to their promising and exciting applications in photovoltaic devices. In this paper, all-solution-processed UV-IR broadband trilayer photodetectors ITO/ZnO/PbS/CsPbBr₃/Au and ITO/ZnO/CsPbBr₃/PbS/Au with high performance were presented. The role of CsPbBr₃ QDs layer as the carriers-extracting layer in the trilayer devices was discussed. As compared with bilayer device ITO/ZnO/PbS/Au, both the dark currents and photocurrents under illumination from trilayer photodetectors are enhanced, but the trilayer photodetector ITO/ZnO(80 nm)/PbS(150 nm)/CsPbBr₃(50 nm)/Au showed a maximum specific detectivity (D*) of 8.3 × 10¹² Jones with a responsivity (R) of 35 A W^-1 under 1.6 mW cm^-2 980 nm illumination. However, another trilayer photodetector ITO/ZnO(80 nm)/CsPbBr₃(50 nm)/PbS(150 nm)/Au showed a maximum D* of 1.73 × 10¹² Jones with a R of 5.31 A W^-1 under 6.8 mW cm^-2 405 nm illumination. Further, the underlying mechanism for the enhanced performance of trilayer photodetectors was discussed. Thus, this strategy of all-solution-processed heterojunction configuration paves a facile way for broadband photodetectors with high performance.

To Be Higher and Stronger-Metal Oxide Electron Transport Materials for Perovskite Solar Cells

Organometallic mixed halide perovskite solar cells (PSCs) have emerged as a promising photovoltaic technology with increasingly improved device efficiency exceeding 24%. Charge transport layers, especially electron transport layers (ETLs), are verified to play a vital role in device performance and stability. Recently, metal oxides (MOs) have been widely studied as ETLs for high-performance PSCs due to their excellent electronic properties, superb versatility, and great stability. This Review briefly discusses the development of PSCs' architecture and outlines the requirements for MO ETLs. Additionally, recent progress of MO ETLs from preparation to optimization for efficient PSCs is systematically summarized and highlighted to associate the versatility of MO ETLs with the performance of devices. Finally, a summary and prospectives for the future development of MO ETLs toward practical application of high-performance PSCs are drawn.

Black phosphorus quantum dots in inorganic perovskite thin films for efficient photovoltaic application

Black phosphorus quantum dots (BPQDs) are proposed as effective seed-like sites to modulate the nucleation and growth of CsPbI₂Br perovskite crystalline thin layers, allowing an enhanced crystallization and remarkable morphological improvement. We reveal that the lone-pair electrons of BPQDs can induce strong binding between molecules of the CsPbI₂Br precursor solution and phosphorus atoms stemming from the concomitant reduction in coulombic repulsion. The four-phase transition during the annealing process yields an α-phase CsPbI₂Br stabilized by BPQDs. The BPQDS/CsPbI₂Br core-shell structure concomitantly reinforces a stable CsPbI₂Br crystallite and suppresses the oxidation of BPQDs. Consequently, a power conversion efficiency of 15.47% can be achieved for 0.7 wt % BPQDs embedded in CsPbI₂Br film-based devices, with an enhanced cell stability, under ambient conditions. Our finding is a decisive step in the exploration of crystallization and phase stability that can lead to the realization of efficient and stable inorganic perovskite solar cells.

Ptychographic X-ray tomography reveals additive zoning in nanocomposite single crystals

Single crystals containing nanoparticles represent a unique class of nanocomposites whose properties are defined by both their compositions and the structural organization of the dispersed phase in the crystalline host. Yet, there is still a poor understanding of the relationship between the synthesis conditions and the structures of these materials. Here ptychographic X-ray computed tomography is used to visualize the three-dimensional structures of two nanocomposite crystals - single crystals of calcite occluding diblock copolymer worms and vesicles. This provides unique information about the distribution of the copolymer nano-objects within entire, micron-sized crystals with nanometer spatial resolution and reveals how occlusion is governed by factors including the supersaturation and calcium concentration. Both nanocomposite crystals are seen to exhibit zoning effects that are governed by the solution composition and interactions of the additives with specific steps on the crystal surface. Additionally, the size and shape of the occluded vesicles varies according to their location within the crystal, and therefore the solution composition at the time of occlusion. This work contributes to our understanding of the factors that govern nanoparticle occlusion within crystalline materials, where this will ultimately inform the design of next generation nanocomposite materials with specific structure/property relationships.

Unusually Dispersed AgI Quantum Dots For Efficient HTL-Free CH3NH3PbI3 Photovoltaics

The utilization of quantum dots (QDs) to improve the performance of perovskite solar cells is attracting much attention due to their unique optical and electronic properties. Most of QDs have to be prepared in advance and then incorporated into the perovskite hosts, which could not ensure the maintenance of their QD characteristics. In this work, we intelligently developed an in situ preparation strategy to disperse AgI QDs homogeneously in the perovskite host for the MAPbI₃:AgI(QDs) cross-blended layer directly on indium tin oxide (ITO) via a common and convenient spin-coating process. We combine transmission electron microscopy, X-ray photoelectron spectroscopy, and Raman techniques to demonstrate the cross-blended MAPbI₃:AgI(QDs) structure in the final perovskite devices. Furthermore, a series of simply inverted ITO/MAPbI₃:AgI(QDs)/PCBM/Ag devices have been designed and fabricated. The photovoltaic performance of these solar cells shows significantly improved short-circuit current density (J_sc) and a champion power conversion efficiency of 16.41% even without a hole transport layer. The current technique induced the crystal growth toward high-quality perovskite films with a homogeneous structure, good crystallinity, less grain boundaries and defects, increased optical path length, and uniform thickness for better solar cell performance. Besides, the impact of the current strategy also lies in an accommodation effect of the hole collection at the ITO side induced by AgI QDs, which modifies the Fermi level of perovskite films, leading to significantly decreased level difference in the Fermi level/work function between the perovskite layer and ITO substrates by ultraviolet photoelectron spectra analysis. More importantly, the charge carrier dynamics of such novel MAPbI₃:AgI(QDs) structures were also scrutinized by transient photovoltage analysis.

Interfacial Contact Passivation for Efficient and Stable Cesium-Formamidinium Double-Cation Lead Halide Perovskite Solar Cells

Perovskite solar cells (PSCs) have achieved extremely high power conversion efficiencies (PCEs) of over 25%, but practical application still requires further improvement in the long-term stability of the device. Herein, we present an in situ interfacial contact passivation strategy to reduce the interfacial defects and extraction losses between the hole transporting layer and perovskite. The existence of PbS promotes the crystallization of perovskite, passivates the interface and grain boundary defects, and reduces the nonradiation recombination, thereby leading to a champion PCE of 21.07% with reduced hysteresis, which is one of the best results for the methylammonium (MA)-free, cesium formamidinium double-cation lead-based PSCs. Moreover, the unencapsulated device retains more than 93% and 82% of its original efficiencies after 1 year's storage under ambient conditions and thermal aging at 85°C for 1,000 h in a nitrogen atmosphere, likely due to the usage of MA-free perovskite and the enhanced surface hydrophobicity.

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An in situ interfacial defects contact passivation strategy has been developed

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PbS quantum dots were used as the passivant to reduce the traps of perovskite films

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The methylammonium-free device with passivation layer gives efficiency over 21%

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The unsealed device demonstrated excellent ambient and thermal long-term stability

PbS quantum dots as additives in methylammonium halide perovskite solar cells: the effect of quantum dot capping

Colloidal PbS quantum dots (QDs) have been successfully employed as additives in halide perovskite solar cells (PSCs) acting as nucleation centers in the perovskite crystallization process. For this strategy, the surface functionalization of the QDs, controlled via the use of different capping ligands, is likely of key importance. In this work, we examine the influence of the PbS QD capping on the photovoltaic performance of methylammonium lead iodide PSCs. We test PSCs fabricated with PbS QD additives with different capping ligands including methylammonium lead iodide (MAPI), cesium lead iodide (CsPI) and 4-aminobenzoic acid (ABA). Both the presence of PbS QDs and the specific capping used have a significant effect on the properties of the deposited perovskite layer, which affects, in turn, the photovoltaic performance. For all capping ligands used, the inclusion of PbS QDs leads to the formation of perovskite films with larger grain size, improving, in addition, the crystalline preferential orientation and the crystallinity. Yet, differences between the capping agents were observed. The use of QDs with ABA capping had a higher impact on the morphological properties while the employment of the CsPI ligand was more effective in improving the optical properties of the perovskite films. Taking advantage of the improved properties, PSCs based on the perovskite films with embedded PbS QDs exhibit an enhanced photovoltaic performance, showing the highest increase with ABA capping. Moreover, bulk recombination via trap states is reduced when the ABA ligand is used for capping of the PbS QD additives in the perovskite film. We demonstrate how surface chemistry engineering of PbS QD additives in solution-processed perovskite films opens a new approach towards the design of high quality materials, paving the way to improved optoelectronic properties and more efficient photovoltaic devices.

Ultrastable Carbon Quantum Dots-Doped MAPbBr3 Perovskite with Silica Encapsulation

Having suffered from intrinsic structural lability, perovskite quantum dots (PQDs) are extremely unstable under high-temperature and moisture conditions, which have greatly limited their applications. In this work, we propose a novel method to synthesize ultrastable carbon quantum dots (CQDs)-doped methylamine (MA) lead bromide PQDs with SiO₂ encapsulation (CQDs-MAPbBr₃@SiO₂). The kernel CQDs-MAPbBr₃ is formed by the interaction of carboxyl-rich CQDs with MAPbBr₃ via H-bond, which greatly improves the thermal stability of CQDs-MAPbBr₃. Furthermore, highly compact SiO₂ encapsulates the proposed CQDs-MAPbBr₃ via a facile in situ growth strategy, which effectively enhances the water resistance and air stability of CQDs-MAPbBr₃@SiO₂. As a result, the proposed nanomaterial shows extremely high water stability in aqueous solution for over 9 months and ideal thermal stability with strong fluorescence (FL) emission after 150 °C annealing. Based on the superior stability and ultrahigh FL efficiency of this proposed nanomaterial, a primary sensing method for ion (Ag⁺ and Zn²⁺) FL detection has been developed and the mechanism of PQDs-based ion determination has also been discussed, thus exhibiting the potential applications of CQDs-MAPbBr₃@SiO₂ in the area of FL assay and environment monitoring.

Interaction between Colloidal Quantum Dots and Halide Perovskites: Looking for Constructive Synergies

Colloidal quantum dots (QDs) have received extensive attention during the last few decades because of their amazing properties emerging from quantum confinement. In parallel, halide perovskites have attracted attention because of the demonstration of very high performance, especially in solar cells, light-emitting diodes (LEDs), and other optoelectronic devices. Both families of materials can be prepared in a relatively simple way, facilitating their integration. There are several examples of their interaction enhancing the properties of the final nanocomposite. Perovskites can effectively passivate QDs or act as efficient charge transporters. QDs can be used to modify the selective contacts in perovskite devices or can be used as efficient light emitters or absorbers for enhanced LEDs and photodetectors, respectively. Moreover, QDs can seed the perovskite crystal growth, improving the morphology and ultimately the solar cell performance. In addition, new advanced devices can emerge as a result of the constructive synergy between both families of materials.

Enhanced Efficiency of MAPbI₃ Perovskite Solar Cells with FAPbX₃ Perovskite Quantum Dots

We describe a method to enhance power conversion efficiency (PCE) of MAPbI₃ perovskite solar cell by inserting a FAPbX₃ perovskite quantum dots (QD-FAPbX₃) layer. The MAPbI₃ and QD-FAPbX₃ layers were prepared using a simple, rapid spin-coating method in a nitrogen-filled glove box. The solar cell structure consists of ITO/PEDOT:PSS/MAPbI₃/QD-FAPbX₃/C₆₀/Ag, where PEDOT:PSS, MAPbI₃, QD-FAPbX₃, and C₆₀ were used as the hole transport layer, light-absorbing layer, absorption enhance layer, and electron transport layer, respectively. The MAPbI₃/QD-FAPbX₃ solar cells exhibit a PCE of 7.59%, an open circuit voltage (Voc) of 0.9 V, a short-circuit current density (Jsc) of 17.4 mA/cm², and a fill factor (FF) of 48.6%, respectively.

Perovskite/Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] Bulk Heterojunction for High-Efficient Carbon-Based Large-Area Solar Cells by Gradient Engineering

The performance of low-temperature carbon-based perovskite solar cells (C-PSCs) with high commercial potential was hampered by the inferior interface between the absorber and carbon electrode. In this work, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) was dissolved in an antisolvent for spin-coating perovskite (CH₃NH₃PbI₃, MAPI) films, which was applied to modify both the MAPI films and the interface between the MAPI layer and carbon electrode by gradient engineering. Finally, the C-PSCs based on MAPI-PTAA gradient bulk heterojunction films achieved a power conversion efficiency of 13.0% with an active area of 1 cm², 26% higher than that of pristine MAPI cells, because of the passivated trap states, accelerated hole extraction, and improved crystalline properties in absorber films.