Thin films of V2O5/MoO3 and their applications in electrochromism

Preparation of V2O5 Thin Film by Sol–Gel Technique and Pen Plotter Printing

The work is dedicated to study of thin V2O5 film formation by pen plotter printing using vanadyl alkoxyacetylacetonate as hydrolytically active precursor. Solution of the prepared vanadyl butoxyacetylacetonate complex with 87% of butoxyl groups was used as functional ink for pen plotter printing of thin V2O5 film on surface of specialized chip. According to atomic force microscopy (AFM) and scanning electron microscopy (SEM), oxide film consists of nanorods 35–75 nm in thickness and 120–285 nm in length, with crystallite size of 54 ± 4 nm. Data from Rietveld refinement of the X-ray powder diffraction results and work function value (4.54 eV) indicate high content of defects (such as oxygen vacancies) in the material. Electrophysical properties study suggests that correlated barrier hopping of the charge carriers is the main conductivity mechanism. Conductivity activation energy Ea was found to be 0.24 eV.

Synthesis and defect engineering of molybdenum oxides and their SERS applications

Surface-enhanced Raman scattering (SERS) spectroscopy has been developed into a cross-disciplinary analytical technology through exploring various materials' Raman vibrational modes with ultra-high sensitivity and specificity. Although conventional noble-metal based SERS substrates have achieved great success, oxide-semiconductor-based SERS substrates are attracting researchers' intensive interest due to their merits of facile fabrication, high uniformity and tunable SERS characteristics. Among all the SERS active oxide semiconductors, molybdenum oxides (MoO_x) possess exceptional advantages of high Raman enhancement factor, environmental stability, recyclable detection, etc. More interestingly, the SERS effect of the MoO_x SERS substrates may involve both the electromagnetic enhancement mechanism and the chemical enhancement mechanism, which is determined by the stoichiometry and morphology of the material. Therefore, the focus of this review will be on two critical points: (1) synthesis and material engineering methods of the functional MoO_x material and (2) MoO_x SERS mechanism and performance evaluation. First, we review recent works on the MoO_x preparation and material property tuning approaches. Second, the SERS mechanism and performance of various MoO_x substrates are surveyed. In particular, the performance uniformity, enhancement factor and recyclability are evaluated. In the end, we discuss several challenges and open questions related to further promoting the MoO_x as the SERS substrate for monitoring extremely low trace molecules and the theory for better understanding of the SERS enhancement mechanism.

Electrically Activated UV-A Filters Based on Electrochromic MoO3-x

Chromism-based optical filters is a niche field of research, due to there being only a handful of electrochromic materials. Typically, electrochromic transition metal oxides such as MoO₃ and WO₃ are utilized in applications such as smart windows and electrochromic devices (ECD). Herein, we report MoO_3-x-based electrically activated ultraviolet (UV) filters. The MoO_3-x grown on indium tin oxide (ITO) substrate is mechanically assembled onto an electrically activated proton exchange membrane. Reversible H⁺ injection/extraction in MoO_3-x is employed to switch the optical transmittance, enabling an electrically activated optical filter. The devices exhibit broadband transmission modulation (325-800 nm), with a peak of ∼60% in the UV-A range (350-392 nm). Comparable switching times of 8 s and a coloration efficiency of up to 116 cm² C^-1 are achieved.