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Xu J, Dong W, Huang Q, Zhang Y, Yin Y, Zhao Z, Zeng D, Gao X, Gu W, Yang Z, Li H, Han X, Geng Y, Zhai K, Chen B, Fu X, Lei L, Wu X, Dong J, Su Y, Li M, Liu J, Zhu N, Guo X, Zhou H, Wen H, Qiu K, Zhang X. Progress in silicon-based reconfigurable and programmable all-optical signal processing chips. FRONTIERS OF OPTOELECTRONICS 2025; 18:10. [PMID: 40353883 PMCID: PMC12069217 DOI: 10.1007/s12200-025-00154-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/18/2024] [Accepted: 02/27/2025] [Indexed: 05/14/2025]
Abstract
Taking the advantage of ultrafast optical linear and nonlinear effects, all-optical signal processing (AOSP) enables manipulation, regeneration, and computing of information directly in optical domain without resorting to electronics. As a promising photonic integration platform, silicon-on-insulator (SOI) has the advantage of complementary metal oxide semiconductor (CMOS) compatibility, low-loss, compact size as well as large optical nonlinearities. In this paper, we review the recent progress in the project granted to develop silicon-based reconfigurable AOSP chips, which aims to combine the merits of AOSP and silicon photonics to solve the unsustainable cost and energy challenges in future communication and big data applications. Three key challenges are identified in this project: (1) how to finely manipulate and reconfigure optical fields, (2) how to achieve ultra-low loss integrated silicon waveguides and significant enhancement of nonlinear effects, (3) how to mitigate crosstalk between optical, electrical and thermal components. By focusing on these key issues, the following major achievements are realized during the project. First, ultra-low loss silicon-based waveguides as well as ultra-high quality microresonators are developed by advancing key fabrication technologies as well as device structures. Integrated photonic filters with bandwidth and free spectral range reconfigurable in a wide range were realized to finely manipulate and select input light fields with a high degree of freedom. Second, several mechanisms and new designs that aim at nonlinear enhancement have been proposed, including optical ridge waveguides with reverse biased PIN junction, slot waveguides, multimode waveguides and parity-time symmetry coupled microresonators. Advanced AOSP operations are verified with these novel designs. Logical computations at 100 Gbit/s were demonstrated with self-developed, monolithic integrated programmable optical logic array. High-dimensional multi-value logic operations based on the four-wave mixing effect are realized. Multi-channel all-optical amplitude and phase regeneration technology is developed, and a multi-channel, multi-format, reconfigurable all-optical regeneration chip is realized. Expanding regeneration capacity via spatial dimension is also verified. Third, the crosstalk from optical as well as thermal coupling due to high-density integration are mitigated by developing novel optical designs and advanced packaging technologies, enabling high-density, small size, multi-channel and multi-functional operation with low power consumption. Finally, four programmable AOSP chips are developed, i.e., programmable photonic filter chip, programmable photonic logic operation chip, multi-dimensional all-optical regeneration chip, and multi-channel and multi-functional AOSP chip with packaging. The major achievements developed in this project pave the way toward ultra-low loss, high-speed, high-efficient, high-density information processing in future classical and non-classical communication and computing applications.
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Affiliation(s)
- Jing Xu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
- Optics Valley Laboratory, Wuhan, 430074, China
| | - Wenchan Dong
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Qingzhong Huang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yujia Zhang
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Yuchen Yin
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Zhenyu Zhao
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Desheng Zeng
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xiaoyan Gao
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Wentao Gu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Zihao Yang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hanghang Li
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xinjie Han
- Key Lab of Optical Fiber Sensing and Communication Networks, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Yong Geng
- Key Lab of Optical Fiber Sensing and Communication Networks, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Kunpeng Zhai
- Institute of Intelligent Photonics, Nankai University, Tianjin, 300071, China
- Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Bei Chen
- Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Xin Fu
- Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Lei Lei
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Xiaojun Wu
- School of Electronic and Information Engineering, Beihang University, Beijing, 100191, China
| | - Jianji Dong
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
- Optics Valley Laboratory, Wuhan, 430074, China
| | - Yikai Su
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Ming Li
- Institute of Intelligent Photonics, Nankai University, Tianjin, 300071, China
| | - Jianguo Liu
- Institute of Intelligent Photonics, Nankai University, Tianjin, 300071, China
- Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Ninghua Zhu
- Institute of Intelligent Photonics, Nankai University, Tianjin, 300071, China
- Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Xuhan Guo
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.
| | - Heng Zhou
- Key Lab of Optical Fiber Sensing and Communication Networks, University of Electronic Science and Technology of China, Chengdu, 611731, China.
| | - Huashun Wen
- Institute of Intelligent Photonics, Nankai University, Tianjin, 300071, China.
- Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
| | - Kun Qiu
- Key Lab of Optical Fiber Sensing and Communication Networks, University of Electronic Science and Technology of China, Chengdu, 611731, China.
| | - Xinliang Zhang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China.
- Optics Valley Laboratory, Wuhan, 430074, China.
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Wang X, Du J, Zhang W, Shen W, Xu K, He Z. High-density MDM silicon photonic transmitter assisted with MRMs and a two-dimensional grating coupler for single-fiber 4 × 80-Gbps signaling. OPTICS LETTERS 2025; 50:2638-2641. [PMID: 40232458 DOI: 10.1364/ol.555098] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2025] [Accepted: 03/11/2025] [Indexed: 04/16/2025]
Abstract
In this paper, a four-channel silicon photonic mode division multiplexing (MDM) transmitter chiplet is proposed over a 1.85-mm2 footprint, utilizing micro-ring modulators and a two-dimensional grating coupler (2D GC) with side-distributed Bragg reflectors. Through genetic optimization approach, the optimized 2D GC can simultaneously couple the two orthogonal polarizations of the on-chip TE0 and TE1 modes to the four LP modes in the FMF, all exhibiting high coupling efficiency beyond -3.8 dB, so as to support the MDM optical fiber interface. High data rate up to 4 × 80-Gbps signaling is experimentally demonstrated with a bit error rate below the 7% hard-decision forward-error-correction threshold. The proposed transmitter chiplet features single fiber and single-wavelength applications of quad small form-factor pluggable (QSFP) transceivers, pave the way toward future high-density and large-capacity optical interconnects scenarios.
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Chen G, Wang G, Wang Z, Wang L. Electronic Chip Package and Co-Packaged Optics (CPO) Technology for Modern AI Era: A Review. MICROMACHINES 2025; 16:431. [PMID: 40283307 PMCID: PMC12029643 DOI: 10.3390/mi16040431] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/13/2025] [Revised: 03/22/2025] [Accepted: 03/28/2025] [Indexed: 04/29/2025]
Abstract
With the growing demand for high-performance computing (HPC), artificial intelligence (AI), and data communication and storage, new chip technologies have emerged, following Moore's Law, over the past few decades. As we enter the post-Moore era, transistor dimensions are approaching their physical limits. Advanced packaging technologies, such as 3D chiplets hetero-integration and co-packaged optics (CPO), have become crucial for further improving system performance. Currently, most solutions rely on silicon-based technologies, which alleviate some challenges but still face issues such as warpage, bumps' reliability, through-silicon vias' (TSVs) and redistribution layers' (RDLs) reliability, and thermal dissipation, etc. Glass, with its superior mechanical, thermal, electrical, and optical properties, is emerging as a promising material to address these challenges, particularly with the development of femtosecond laser technology. This paper discusses the evolution of both conventional and advanced packaging technologies and outlines future directions for design, fabrication, and packaging using glass substrates and femtosecond laser processing.
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Affiliation(s)
| | | | | | - Lijun Wang
- Hangzhou Institute of Technology, Xidian University, Hangzhou 311231, China; (G.C.); (G.W.); (Z.W.)
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Singh N, Lorenzen J, Kilinc M, Wang K, Sinobad M, Francis H, Carreira J, Geiselmann M, Demirbas U, Pergament M, Garcia-Blanco SM, Kärtner FX. Sub-2W tunable laser based on silicon photonics power amplifier. LIGHT, SCIENCE & APPLICATIONS 2025; 14:18. [PMID: 39743626 DOI: 10.1038/s41377-024-01681-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2024] [Revised: 10/27/2024] [Accepted: 10/30/2024] [Indexed: 01/04/2025]
Abstract
High-power tunable lasers are intensely pursued due to their vast application potential such as in telecom, ranging, and molecular sensing. Integrated photonics, however, is usually considered not suitable for high-power applications mainly due to its small size which limits the energy storage capacity and, therefore, the output power. In the late 90s, to improve the beam quality and increase the stored energy, large-mode-area (LMA) fibers were introduced in which the optical mode area is substantially large. Such LMA fibers have transformed the high-power capability of fiber systems ever since. Introducing such an LMA technology at the chip-scale can play an equally disruptive role with high power signal generation from an integrated photonics system. To this end, in this work we demonstrate such a technology, and show a very high-power tunable laser with the help of a silicon photonics based LMA power amplifier. We show output power reaching 1.8 W over a tunability range of 60 nm, spanning from 1.83 µm to 1.89 µm, limited only by the seed laser. Such an integrated LMA device can be used to substantially increase the power of the existing integrated tunable lasers currently limited to a few tens of milliwatts. The power levels demonstrated here reach and surpass that of many benchtop systems which truly makes the silicon photonics based integrated LMA device poised towards mass deployment for high power applications without relying on benchtop systems.
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Affiliation(s)
- Neetesh Singh
- Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany.
| | - Jan Lorenzen
- Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany
| | - Muharrem Kilinc
- Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany
| | - Kai Wang
- Integrated Optical Systems, MESA+ Institute for Nanotechnology, University of Twente, 7500AE, Enschede, The Netherlands
| | - Milan Sinobad
- Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany
| | - Henry Francis
- LIGENTEC SA, EPFL Innovation Par L, Chemin de la Dent-d'Oche 1B, CH-1024, Ecublens, Switzerland
| | - Jose Carreira
- LIGENTEC SA, EPFL Innovation Par L, Chemin de la Dent-d'Oche 1B, CH-1024, Ecublens, Switzerland
| | - Michael Geiselmann
- LIGENTEC SA, EPFL Innovation Par L, Chemin de la Dent-d'Oche 1B, CH-1024, Ecublens, Switzerland
| | - Umit Demirbas
- Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany
| | - Mikhail Pergament
- Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany
| | - Sonia M Garcia-Blanco
- Integrated Optical Systems, MESA+ Institute for Nanotechnology, University of Twente, 7500AE, Enschede, The Netherlands
| | - Franz X Kärtner
- Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany
- Department of Physics, Universität Hamburg, Jungiusstr. 9, 20355, Hamburg, Germany
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Tian W, Hou H, Dang H, Cao X, Li D, Chen S, Ma B. Progress in Research on Co-Packaged Optics. MICROMACHINES 2024; 15:1211. [PMID: 39459085 PMCID: PMC11509299 DOI: 10.3390/mi15101211] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2024] [Revised: 09/21/2024] [Accepted: 09/27/2024] [Indexed: 10/28/2024]
Abstract
In the 5G era, the demand for high-bandwidth computing, transmission, and storage has led to the development of optoelectronic interconnect technology. This technology has evolved from traditional board-edge optical modules to smaller and more integrated solutions. Co-packaged optics (CPO) has evolved as a solution to meet the growing demand for data. Compared to typical optoelectronic connectivity technology, CPO presents distinct benefits in terms of bandwidth, size, weight, and power consumption. This study presents an overview of CPO, highlighting its fundamental principles, advantages, and distinctive features. Additionally, it examines the current research progress of two distinct approaches utilizing Vertical-Cavity Surface-Emitting Laser (VCSEL) and silicon photonics integration technology. Additionally, it provides a concise overview of the many application situations of CPO. Expanding on this, the analysis focuses on the CPO using 2D, 2.5D, and 3D packaging techniques. Lastly, taking into account the present technological environment, the scientific obstacles encountered by CPO are analyzed, and its future progress is predicted.
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Affiliation(s)
- Wenchao Tian
- School of Electro-Mechanical Engineering, Xidian University, Xi’an 710071, China; (H.H.); (H.D.); (X.C.); (D.L.)
- State Key Laboratory of Electromechanical Integrated Manufacturing of High-Performance Electronic Equipments, Xi’an 710071, China
| | - Huahua Hou
- School of Electro-Mechanical Engineering, Xidian University, Xi’an 710071, China; (H.H.); (H.D.); (X.C.); (D.L.)
| | - Haojie Dang
- School of Electro-Mechanical Engineering, Xidian University, Xi’an 710071, China; (H.H.); (H.D.); (X.C.); (D.L.)
| | - Xinxin Cao
- School of Electro-Mechanical Engineering, Xidian University, Xi’an 710071, China; (H.H.); (H.D.); (X.C.); (D.L.)
| | - Dexin Li
- School of Electro-Mechanical Engineering, Xidian University, Xi’an 710071, China; (H.H.); (H.D.); (X.C.); (D.L.)
| | - Si Chen
- The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou 510000, China;
| | - Bingxu Ma
- The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510000, China;
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Singh N, Srivastava K, Kumar A, Yadav N, Yadav A, Dubey S, Singh R, Gehlot A, Verma AS, Gupta N, Kumar T, Wu Y, Hongyu Z, Mondal A, Pandey K, Brajpuriya R, Kumar S, Gupta R. Challenges and opportunities in engineering next-generation 3D microelectronic devices: improved performance and higher integration density. NANOSCALE ADVANCES 2024:d4na00578c. [PMID: 39569337 PMCID: PMC11575647 DOI: 10.1039/d4na00578c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2024] [Accepted: 07/29/2024] [Indexed: 11/22/2024]
Abstract
In recent years, nanotechnology and materials science have evolved and matured, making it increasingly easier to design and fabricate next-generation 3D microelectronics. The process has changed drastically from traditional 2D microelectronics, resulting in improved performance, higher integration density, and new functionalities. As applications become more complex and power-intensive, this technology can address the demands of high-performance computing, advanced sensors, and cutting-edge communication systems via wearable, flexible devices, etc. To manufacture higher-density microelectronics, recent advances in the fabrication of such 3D devices are discussed. Furthermore, the paper stresses the importance of novel materials and architectures, such as monolithic 3D integration and heterogeneous integration, in overcoming these challenges. We emphasize the importance of addressing complex issues to achieve better performance and higher integration density, which will play an important role in shaping the next generation of microelectronic devices. The multifaceted challenges involved in developing next-generation 3D microelectronic devices are also highlighted.
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Affiliation(s)
- Niharika Singh
- Department of Informatics, School of Computer Science, University of Petroleum & Energy Studies Dehradun-248007 Uttarakhand India
| | - Kingshuk Srivastava
- Department of CSE, Vivekananda Global University Jaipur Rajasthan 303012 India
| | - Ajay Kumar
- Jaypee Institute of Information Technology Noida Uttar Pradesh India
| | - Neha Yadav
- Center for Advanced Laser Manufacturing (CALM), Shandong University of Technology Zibo 255000 P. R. China
| | - Ashish Yadav
- Center for Advanced Laser Manufacturing (CALM), Shandong University of Technology Zibo 255000 P. R. China
| | - Santosh Dubey
- Department of Physics, School of Engineering, University of Petroleum & Energy Studies Dehradun 248007 Uttarakhand India
| | - Rajesh Singh
- Uttaranchal Institute of Technology, Uttaranchal University Dehradun 248007 India
- Department of Project Management, Universidad Internacional Iberoamericana Campeche 24560 CP Mexico
| | - Anita Gehlot
- Uttaranchal Institute of Technology, Uttaranchal University Dehradun 248007 India
- Department of Project Management, Universidad Internacional Iberoamericana Campeche 24560 CP Mexico
| | - Ajay Singh Verma
- Division of Research and Innovation, School of Applied and Life Sciences, Uttaranchal University Dehradun Uttarakhand 248007 India
| | - Neha Gupta
- Applied Science Department, Greater Noida Institute of Technology Greater Noida 201310 India
| | - Tanuj Kumar
- Department of Nanoscience & Materials, Central University of Jammu Jammu 181143 India
| | - Yongling Wu
- Center for Advanced Laser Manufacturing (CALM), Shandong University of Technology Zibo 255000 P. R. China
| | - Zheng Hongyu
- Center for Advanced Laser Manufacturing (CALM), Shandong University of Technology Zibo 255000 P. R. China
| | - Aniruddha Mondal
- Department of Physics, National Institute of Technology Durgapur Durgapur 713209 West Bengal India
| | - Kailash Pandey
- Department of Physics, School of Engineering, University of Petroleum & Energy Studies Dehradun 248007 Uttarakhand India
| | - Ranjeet Brajpuriya
- Department of Physics, School of Engineering, University of Petroleum & Energy Studies Dehradun 248007 Uttarakhand India
| | - Shalendra Kumar
- Department of Physics, School of Engineering, University of Petroleum & Energy Studies Dehradun 248007 Uttarakhand India
| | - Rajeev Gupta
- Department of Physics, School of Engineering, University of Petroleum & Energy Studies Dehradun 248007 Uttarakhand India
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Cheng J, Huang C, Zhang J, Wu B, Zhang W, Liu X, Zhang J, Tang Y, Zhou H, Zhang Q, Gu M, Dong J, Zhang X. Multimodal deep learning using on-chip diffractive optics with in situ training capability. Nat Commun 2024; 15:6189. [PMID: 39043669 PMCID: PMC11266606 DOI: 10.1038/s41467-024-50677-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2024] [Accepted: 07/18/2024] [Indexed: 07/25/2024] Open
Abstract
Multimodal deep learning plays a pivotal role in supporting the processing and learning of diverse data types within the realm of artificial intelligence generated content (AIGC). However, most photonic neuromorphic processors for deep learning can only handle a single data modality (either vision or audio) due to the lack of abundant parameter training in optical domain. Here, we propose and demonstrate a trainable diffractive optical neural network (TDONN) chip based on on-chip diffractive optics with massive tunable elements to address these constraints. The TDONN chip includes one input layer, five hidden layers, and one output layer, and only one forward propagation is required to obtain the inference results without frequent optical-electrical conversion. The customized stochastic gradient descent algorithm and the drop-out mechanism are developed for photonic neurons to realize in situ training and fast convergence in the optical domain. The TDONN chip achieves a potential throughput of 217.6 tera-operations per second (TOPS) with high computing density (447.7 TOPS/mm2), high system-level energy efficiency (7.28 TOPS/W), and low optical latency (30.2 ps). The TDONN chip has successfully implemented four-class classification in different modalities (vision, audio, and touch) and achieve 85.7% accuracy on multimodal test sets. Our work opens up a new avenue for multimodal deep learning with integrated photonic processors, providing a potential solution for low-power AI large models using photonic technology.
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Affiliation(s)
- Junwei Cheng
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Chaoran Huang
- Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, 999077, China
| | - Jialong Zhang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Bo Wu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Wenkai Zhang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xinyu Liu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Jiahui Zhang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yiyi Tang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hailong Zhou
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Qiming Zhang
- Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai, 200093, China
| | - Min Gu
- Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai, 200093, China
| | - Jianji Dong
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China.
- Optics Valley Laboratory, Wuhan, 430074, China.
| | - Xinliang Zhang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
- Optics Valley Laboratory, Wuhan, 430074, China
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8
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Kim M, Kang EK, Jung SY, Kwon WB, Kwon S, Lee J. Compact lithium niobate plasmonic modulator. OPTICS LETTERS 2024; 49:939-942. [PMID: 38359221 DOI: 10.1364/ol.512389] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2023] [Accepted: 01/11/2024] [Indexed: 02/17/2024]
Abstract
Lithium niobate (LN)-based modulators offer superior modulation performances, including high-speed modulation, linearity, and temperature stability. However, these devices exhibit larger sizes due to the low light-matter interaction despite a significant electro-optic coefficient. In this work, we present a compact LN-based modulator using a plasmonic mode that confines the optical mode in a very narrow gap. By filling the gap with LN, the confinement factor in the LN is significantly enhanced. The proposed modulator provides an extremely small half-wave voltage-length product, VπL of 0.02 V/cm at an optical communication wavelength (λ = 1.55 µm). The proposed modulator scheme can be utilized in a wide range of optical communication devices that demand small footprints and a high-speed operation.
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Yu Y, Liu X, Li T, Zou X, Ding J, Xu N, Sahng X, Wang X, Huang P, Cheng C, Si S, Lu H, Zhang H, Li D. Optimization of the cavity length and pulse characterization based on germanene as a saturable absorber in an Er-doped fiber laser. APPLIED OPTICS 2023; 62:9156-9163. [PMID: 38108754 DOI: 10.1364/ao.504880] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Accepted: 11/08/2023] [Indexed: 12/19/2023]
Abstract
In this study, germanene-nanosheets (NSs) were synthesized by liquid-phase exfoliation, followed by an experimental investigation into the nonlinear saturable absorption characteristics and morphological structure of germanene. The germanene-NSs were employed as saturable absorbers, exhibiting saturation intensity and modulation depth values of 22.64M W/c m 2 and 4.48%, respectively. This demonstrated the feasibility of utilizing germanene-NSs passively mode-locked in an erbium-doped fiber laser (EDFL). By optimizing the cavity length, improvements in the output of EDFL characteristics were achieved, resulting in 883 fs pulses with a maximum average output power of 19.74 mW. The aforementioned experimental outcomes underscore the significant potential of germanene in the realms of ultrafast photonics and nonlinear optics.
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