Adsorbates on graphene: Impurity states and electron scattering

Advances in Soft Strain and Pressure Sensors

Soft strain and pressure sensors represent a breakthrough in material engineering and nanotechnology, providing accurate and reliable signal detection for applications in health monitoring, sports management, human-machine interface, or soft robotics, when compared to traditional rigid sensors. However, their performance is often compromised by environmental interference and off-axis mechanical deformations, which lead to nonspecific responses, as well as unstable and inaccurate measurements. These challenges can be effectively addressed by enhancing the sensors' specificity, making them responsive only to the desired stimulus while remaining insensitive to unwanted stimuli. This review systematically examines various materials and design strategies for developing strain and pressure sensors with high specificity for target physical signals, such as tactility, pressure distribution, body motions, or artery pulse. This review highlights approaches in materials engineering that impart special properties to the sensors to suppress interference from factors such as temperature, humidity, and liquid contact. Additionally, it details structural designs that improve sensor performance under different types of off-axis mechanical deformations. This review concludes by discussing the ongoing challenges and opportunities for inspiring the future development of highly specific electromechanical sensors.

The antiferromagnetic phase of a wurtzite nickel sulfide monolayer

Two-dimensional intrinsic long-range magnetic monolayers with high transition temperatures have attracted great interest in both fundamental studies and practical applications. In this study, we use a combination of first-principles calculations based on density functional theory (DFT), and unitary transformation of the effective Heisenberg model to investigate the electronic structure and magnetic properties of a [NiS]2 monolayer. The phonon calculations reveal that the [NiS]2 monolayer is dynamically stable in the wurtzite phase. This material is an out-of-plane easy-axis antiferromagnetically ordered monolayer with the Néel temperature close to room temperature. The intrinsic AFM ground state arises from the presence of top and bottom FM sublattices coupled together via AFM coupling, in which the net magnetic moment of each Ni atom is evaluated as 0.5μB. The spectrum of the spin-wave of [NiS]2 is investigated within the spin-wave theory of antiferromagnets in terms of the first-order Holstein-Primakoff approximation of the anisotropic Heisenberg model combined with the Bogoliubov diagonalization transformation. For the long wavelength limit, the magnon dispersion shows linear behavior with the wave vector, which is expected for conventional antiferromagnetism. The magnon velocity of approximately ∼600 m s-1 is predicted for the [NiS]2 monolayer by calculating the slope of the magnon spectrum. Due to strong spin-orbit coupling, the [NiS]2 monolayer has relatively large magnetic anisotropy energy, causing the existence of the 12 meV gap at the Γ point in the magnon spectrum. The magnon energy gap limits the number of thermally excited states, which is essential for maintaining intrinsic long-range antiferromagnetic order in two dimensions.

In Situ Local Band Engineering of Monolayer Graphene Using Triboelectric Plasma

Graphene, a promising material with excellent properties, suffers from a major limitation in electronics due to its zero bandgap. The gas molecules adsorption has proven to be an effective approach for band regulation, which usually requires a harsh environment. Here, O2 - ions produced with triboelectric plasma are used for in situ regulation of graphene, and the switching ratio can reach 1010. The O2 - ions physical adsorption will reduce the Fermi-level (EF) of graphene. As the EF of graphene is lower than the lowest unoccupied molecular orbital (LUMO) level of O2-, the adsorption of O2 - changes from uniform physical adsorption to local chemical adsorption, thereby realizing the semiconductor properties of graphene. The local graphene bandgap is calculated to be 83.4 meV by the variable-temperature experiment. Furthermore, annealing treatment can restore to 1/10 of the initial conductance. The C─O bond formed by O2 - adsorption has low bond energy and is easy to desorb, while the C═O bond formed by adsorption on defects and edges has higher bond energy and is difficult to desorb. The study proposes a simple in situ method to investigate the microscopic process of O2 - adsorption on the graphene surface, demonstrating a new perspective for local energy band engineering of graphene.

Performance analysis of solution-processed nanosheet strain sensors-a systematic review of graphene and MXene wearable devices

Nanotechnology has led to the realisation of many potentialInternet of Thingsdevices that can be transformative with regards to future healthcare development. However, there is an over saturation of wearable sensor review articles that essentially quote paper abstracts without critically assessing the works. Reported metrics in many cases cannot be taken at face value, with researchers overly fixated on large gauge factors. These facts hurt the usefulness of such articles and the very nature of the research area, unintentionally misleading those hoping to progress the field. Graphene and MXenes are arguably the most exciting organic and inorganic nanomaterials for polymer nanocomposite strain sensing applications respectively. Due to their combination of cost-efficient, scalable production and device performances, their potential commercial usage is very promising. Here, we explain the methods for colloidal nanosheets suspension creation and the mechanisms, metrics and models which govern the electromechanical properties of the polymer-based nanocomposites they form. Furthermore, the many fabrication procedures applied to make these nanosheet-based sensing devices are discussed. With the performances of 70 different nanocomposite systems from recent (post 2020) publications critically assessed. From the evaluation of these works using universal modelling, the prospects of the field are considered. Finally, we argue that the realisation of commercial nanocomposite devices may in fact have a negative effect on the global climate crisis if current research trends do not change.

Resonantly Enhanced Electromigration Forces for Adsorbates on Graphene

We investigate the electromigration forces for weakly bonded adsorbates on graphene by using density-functional based calculations. We find that the nature of electromigration forces on an adsorbate critically depends on the energy level alignment between the adsorbate state and the Fermi level of the graphene. For a resonant adsorbate, whose frontier orbitals lie close to the Fermi level, the electromigration force is dominated by the electron wind force that is strongly enhanced along the electron flow direction, irrespective of the sign of the adsorbate charge. For a nonresonant adsorbate, the electromigration force is essentially the direct force that depends on the adsorbate charge. We also show that the magnitude of electromigration forces can be continuously tunable through electrostatic gating for resonant adsorbates. Our results provide new insight for understanding and controlling how nanoscale objects behave in or on host materials.

DFTB investigations of the electronic and magnetic properties of fluorographene with vacancies and with adsorbed chemical groups

The electronic and magnetic properties of fluorographene (CF) in the presence of F-vacancy defects and/or chemical groups (-OH, -CN, or -NH₂) were computationally investigated within the framework of the density functional tight-binding (DFTB) method. The current method parameterization allowed us to perform accurate electronic structure calculations (at the ab initio level of many-body methods in the particular case of CF) for hundreds of atoms in the computational cell. We show that the F-vacancy and/or chemical groups influence the magnetic structure, which depends on the number of defects and their distribution between the two sides of the graphene plane. Interestingly, we pointed out a possibility of imprinting local magnetism not only via F-vacancy and -OH combinations, but also using F-vacancies and -CN or -NH₂ groups. In such structures, the magnetic ordering and the total magnetic moments depend on their adsorption sites and their presence in the same or on opposite sides of the graphene plane. We devote particular attention to the interacting chemical group with the F-vacancies. The interaction between the adsorbed chemical group and the unpaired spins associated with the F-vacancies in CF gives rise to interesting magnetic structures. Finally, the zigzag-like direction is shown as the most preferred for the defluorination of CF. Stable ferrimagnetic zigzag chains with interesting properties are considered to be basic magnetic features in perturbed CF. Our work provides new guidelines for engineering multifunctional spintronic components using CF as a base material. We believe, in particular, that the magnetism is predominantly controlled by the F-vacancies, and the ferromagnet can ideally be regulated via the adsorption of a chemical group on a defective CF supercell.

Electronic Properties of Oxidized Graphene: Effects of Strain and an Electric Field on Flat Bands and the Energy Gap

A multiscale modeling and simulation approach, including first-principles calculations, ab initio molecular dynamics simulations, and a tight binding approach, is employed to study band flattening of the electronic band structure of oxidized monolayer graphene. The width of flat bands can be tuned by strain, the external electric field, and the density of functional groups and their distribution. A transition to a conducting state is found for monolayer graphene with impurities when it is subjected to an electric field of ∼1.0 V/Å. Several parallel impurity-induced flat bands appear in the low-energy spectrum of monolayer graphene when the number of epoxy groups is changed. The width of the flat band decreases with an increase in tensile strain but is independent of the electric field strength. Here an alternative and easy route for obtaining band flattening in thermodynamically stable functionalized monolayer graphene is introduced. Our work discloses a new avenue for research on band flattening in monolayer graphene.

The Effect of Edge Mode on Mass Sensing for Strained Graphene Resonators

Edge mode could disturb the ultra-subtle mass detection for graphene resonators. Herein, classical molecular dynamics simulations are performed to investigate the effect of edge mode on mass sensing for a doubly clamped strained graphene resonator. Compared with the fundamental mode, the localized vibration of edge mode shows a lower frequency with a constant frequency gap of 32.6 GHz, despite the mutable inner stress ranging from 10 to 50 GPa. Furthermore, the resonant frequency of edge mode is found to be insensitive to centrally located adsorbed mass, while the frequency of the fundamental mode decreases linearly with increasing adsorbates. Thus, a mass determination method using the difference of these two modes is proposed to reduce interferences for robust mass measurement. Moreover, molecular dynamics simulations demonstrate that a stronger prestress or a higher width–length ratio of about 0.8 could increase the low-quality factor induced by edge mode, thus improving the performance in mass sensing for graphene resonators.

Spintronics in Two-Dimensional Materials

Spintronics, exploiting the spin degree of electrons as the information vector, is an attractive field for implementing the beyond Complemetary metal-oxide-semiconductor (CMOS) devices. Recently, two-dimensional (2D) materials have been drawing tremendous attention in spintronics owing to their distinctive spin-dependent properties, such as the ultra-long spin relaxation time of graphene and the spin-valley locking of transition metal dichalcogenides. Moreover, the related heterostructures provide an unprecedented probability of combining the different characteristics via proximity effect, which could remedy the limitation of individual 2D materials. Hence, the proximity engineering has been growing extremely fast and has made significant achievements in the spin injection and manipulation. Nevertheless, there are still challenges toward practical application; for example, the mechanism of spin relaxation in 2D materials is unclear, and the high-efficiency spin gating is not yet achieved. In this review, we focus on 2D materials and related heterostructures to systematically summarize the progress of the spin injection, transport, manipulation, and application for information storage and processing. We also highlight the current challenges and future perspectives on the studies of spintronic devices based on 2D materials.

High-Performance UV-Assisted NO2 Sensor Based on Chemical Vapor Deposition Graphene at Room Temperature

Nitrogen dioxide (NO₂) is one of the most dangerous air pollutants that can affect human health even at the ppb (part per billion) level. Thus, the superior sensing performance of nitrogen dioxide gas sensors is an imperative for real-time environmental monitoring. Traditional solid-state sensors based on metal-oxide transistors have the drawbacks of high power consumption, high operating temperature, poor selectivity, and difficult integration with other electronics. In that respect, graphene-based gas sensors have been extensively studied as potential replacements. However, their advantages of high sensing efficiency, low power consumption, and simple electronic integration have been countered by their slow response and poor repeatability. Here, we report the fabrication of high-performance ultraviolet (UV)-assisted room temperature NO₂ sensors based on chemical vapor deposition-grown graphene. UV irradiation improves the response of the sensor sevenfold with respect to the dark condition attaining 26% change in resistance at 100 ppm NO₂ concentration with a practical detection limit below 1 ppm (42.18 ppb). In addition, the recovery time was shortened fivefold to a few minutes and the excellent repeatability. This work may provide a promising and practical method to mass produce room-temperature NO₂ gas sensors for real-time environment monitoring due to its simple fabrication process, low cost, and practicality.

Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation

Relatively low mobility and thermal conductance create challenges for application of tungsten diselenide (WSe₂) in high performance devices. Dielectric interface is of extremely importance for improving carrier transport and heat spreading in a semiconductor device. Here, by near-equilibrium plasma-enhanced chemical vapour deposition, we realize catalyst-free growth of poly-crystalline two-dimensional hexagonal-boron nitride (2D-BN) with domains around 20~ 200 nm directly on SiO₂/Si, quartz, sapphire, silicon or SiO₂/Si with three-dimensional patterns at 300 °C. Owing to the atomically-clean van-der-Walls conformal interface and the fact that 2D-BN can better bridge the vibrational spectrum across the interface and protect interfacial heat conduction against substrate roughness, both improved performance and thermal dissipation of WSe₂ field-effect transistor are realized with mobility around 56~ 121 cm² V⁻¹ s⁻¹ and saturated power intensity up to 4.23 × 10³ W cm⁻². Owing to its simplicity, conformal growth on three-dimensional surface, compatibility with microelectronic process, it has potential for application in future two-dimensional electronics.

Plasma-enhanced chemical vapour deposition (PECVD) is an industrially compatible microelectronics technology. Here, the authors use PECVD to obtain low-temperature, catalyst-free growth of poly-crystalline two-dimensional hexagonal-boron nitride, thus enabling superior thermal dissipation in WSe₂ field-effect transistors with mobility up to 121 cm² V⁻¹ s⁻¹.

Frictional characteristics of nano-confined water mediated hole-doped single-layer graphene on silica surface

We have investigated the frictional properties of single-layer graphene (SLG) coated rough silica substrate under the influence of nano-confined hydration layer underneath SLG. Through the friction and surface potential measurements by atomic force microscopy (AFM), we found polygonal features in AFM images of SLG-protected silica surface that exhibit simultaneously larger friction and higher surface potential as compared to their surrounding areas due to water layers confined under SLG. Nano-confined water layers at the SLG-silica interface can induce the hole-doping effect in SLG, resulting in a more positively-charged and hydrophilic surface that favors adsorption of ambient water molecules. Therefore, during friction measurements, nanoscale capillary bridges can form within the interstices of AFM probe-SLG contact, leading to larger adhesion and friction. The friction forces were found to respectively have negative and positive dependence on the sliding velocity inside and outside the polygonal regions due to different surface wettability. Hence, it is possible to manipulate the frictional properties of SLG-coated silica by the amount of hydration layer confined underneath SLG. Our results may find applications in friction control for future nano-devices.

Sticking of atomic hydrogen on graphene

Recent years have witnessed an ever growing interest in the interactions between hydrogen atoms and a graphene sheet. Largely motivated by the possibility of modulating the electric, optical and magnetic properties of graphene, a huge number of studies have appeared recently that added to and enlarged earlier investigations on graphite and other carbon materials. In this review we give a glimpse of the many facets of this adsorption process, as they emerged from these studies. The focus is on those issues that have been addressed in detail, under carefully controlled conditions, with an emphasis on the interplay between the adatom structures, their formation dynamics and the electric, magnetic and chemical properties of the carbon sheet.

Infrared Nanospectroscopy of Phospholipid and Surfactin Monolayer Domains

A main challenge in understanding the structure of a cell membrane and its interactions with drugs is the ability to chemically study the different molecular species on the nanoscale. We have achieved this for a model system consisting of mixed monolayers (MLs) of the biologically relevant phospholipid 1,2-distearoyl-sn-glycero-phosphatidylcholine and the antibiotic surfactin. By employing nano-infrared (IR) microscopy and spectroscopy in combination with atomic force microscopy imaging, it was possible to identify and chemically detect domain formation of the two constituents as well as to obtain IR spectra of these species with a spatial resolution on the nanoscale. A novel method to enhance the near-field imaging contrast of organic MLs by plasmon interferometry is proposed and demonstrated. In this technique, the organic layer is deposited on gold and ML graphene substrates, the latter of which supports propagating surface plasmons. Plasmon reflections arising from changes in the dielectric environment provided by the organic layer lead to an additional contrast mechanism. Using this approach, the interfacial region between surfactin and the phospholipid has been mapped and a transition region is identified.

Formation of Uniform Water Microdroplets on Wrinkled Graphene for Ultrafast Humidity Sensing

Portable humidity sensors with ultrafast responses fabricated in wearable devices have promising application prospects in disease diagnostics, health status monitoring, and personal healthcare data collecting. However, prolonged exposures to high-humidity environments usually cause device degradation or failure due to excessive water adsorbed on the sensor surface. In the present work, a graphene film based humidity sensor with a hydrophobic surface and uniformly distributed ring-like wrinkles is designed and fabricated that exhibits excellent performance in breath sensing. The wrinkled morphology of the graphene sensor is able to effectively prevent the aggregation of water microdroplets and thus maximize the evaporation rate. The as-fabricated sensor responds to and recovers from humidity in 12.5 ms, the fastest response of humidity sensors reported so far, yet in a very stable manner. The sensor is fabricated into a mask and successfully applied to monitoring sudden changes in respiratory rate and depth, such as breathing disorder or arrest, as well as subtle changes in humidity level caused by talking, cough and skin evaporation. The sensor can potentially enable long-term daily monitoring of breath and skin evaporation with its ultrafast response and high sensitivity, as well as excellent stability in high-humidity environments.

Adsorption of Water and Ammonia on Graphene: Evidence for Chemisorption from X-ray Absorption Spectra

While the bonding of molecular adsorbates to graphene has so far been characterized as physisorption, our study of adsorbed ammonia and water using near-edge X-ray absorption spectroscopy provides unambiguous evidence for a chemical contribution to the adsorption bond. We use the situation, unique to graphene, to characterize the unoccupied valence band states of the partners in the bond on the basis of the complementary adsorbate and substrate X-ray absorption K edges. New adsorbate-induced features on the substrate (carbon) K edge are interpreted as hybrid states in terms of a simple model of chemical interaction.

Vertical Charge Transfer and Lateral Transport in Graphene/Germanium Heterostructures

Heterostructures consisting of two-dimensional (2D) materials and conventional semiconductors have attracted a lot of attention due to their application in novel device concepts. In this work, we investigated the lateral transport characteristics of graphene/germanium heterostructures and compared them with the transport properties of graphene on SiO₂. The heterostructures were fabricated by transferring a single layer of graphene (Gr) onto a lightly doped germanium (Ge) (100) substrate. The field-effect measurements revealed a shift in the Dirac voltage of Gr on the Ge substrates compared to that of the Gr on SiO₂. Transfer length model measurements show a significant difference in the sheet resistance of Gr on Ge compared to that of the Gr on SiO₂. The results from the electrical and structural characterization suggest that a charge transfer in the order of 10¹² cm^-2 occurs between Gr and Ge resulting in a doping effect in the graphene sheet. A compact electrostatic model extracted the key electronic properties of the Gr/Ge interface. This study provides valuable insights into the electronic properties of Gr on Ge, which are vital to the development of novel devices based on mixed 2D and 3D structures.

Porphyrin molecules boost the sensitivity of epitaxial graphene for NH3 detection

The sensitivity of quasi-free standing epitaxial graphene for NH₃ detection is strongly enhanced by chemical functionalization with cobalt porphyrins resulting in a detection limit well below 100 ppb. Hybridization between NH₃ and cobalt porphyrins induces a charge transfer to graphene and results in a shift of the graphene Fermi-level as detected by Hall measurements and theoretically explained by electronic structure calculations.

Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition

Hexagonal boron nitride (h-BN) has been previously manufactured using mechanical exfoliation and chemical vapor deposition methods, which make the large-scale synthesis of uniform h-BN very challenging. In this study, we produced highly uniform and scalable h-BN films by plasma-enhanced atomic layer deposition, which were characterized by various techniques including atomic force microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray diffraction. The film composition studied by X-ray photoelectron spectroscopy and Auger electron spectroscopy corresponded to a B:N stoichiometric ratio close to 1:1, and the band-gap value (5.65 eV) obtained by electron energy loss spectroscopy was consistent with the dielectric properties. The h-BN-containing capacitors were characterized by highly uniform properties, a reasonable dielectric constant (3), and low leakage current density, while graphene on h-BN substrates exhibited enhanced electrical performance such as the high carrier mobility and neutral Dirac voltage, which resulted from the low density of charged impurities on the h-BN surface.

Graphene-based CO2 sensing and its cross-sensitivity with humidity

We present graphene-based CO₂ sensing and analyze its cross-sensitivity with humidity.

Human-Like Sensing and Reflexes of Graphene-Based Films

Humans have numerous senses, wherein vision, hearing, smell, taste, and touch are considered as the five conventionally acknowledged senses. Triggered by light, sound, or other physical stimulations, the sensory organs of human body are excited, leading to the transformation of the afferent energy into neural activity. Also converting other signals into electronical signals, graphene-based film shows its inherent advantages in responding to the tiny stimulations. In this review, the human-like senses and reflexes of graphene-based films are presented. The review starts with the brief discussions about the preparation and optimization of graphene-based film, as where as its new progress in synthesis method, transfer operation, film-formation technologies and optimization techniques. Various human-like senses of graphene-based film and their recent advancements are then summarized, including light-sensitive devices, acoustic devices, gas sensors, biomolecules and wearable devices. Similar to the reflex action of humans, graphene-based film also exhibits reflex when under thermal radiation and light actuation. Finally, the current challenges associated with human-like applications are discussed to help guide the future research on graphene films. At last, the future opportunities lie in the new applicable human-like senses and the integration of multiple senses that can raise a revolution in bionic devices.

Hexagonal Boron Nitride-Graphene Heterostructures: Synthesis and Interfacial Properties

Research on in-plane and vertically-stacked heterostructures of graphene and hexagonal boron nitride (h-BN) have attracted intense attentions for energy band engineering and device performance optimization of graphene. In this review article, recent advances in the controlled syntheses, interfacial structures, and electronic properties, as well as novel device constructions of h-BN and graphene heterostructures are highlighted. Firstly, diverse synthesis approaches for in-plane h-BN and graphene (h-BN-G) heterostructures are reviewed, and their applications in nanoelectronics are briefly introduced. Moreover, the interfacial structures and electronic properties of h-BN-G heterojunctions are discussed, and a zigzag type interface is found to preferentially evolve at the linking edge of the two structural analogues. Secondly, several synthetic routes for the vertically-stacked graphene/h-BN (G/h-BN) heterostructures are also reviewed. The role of h-BN as perfect dielectric layers in promoting the device performance of graphene is presented. Finally, future research directions in the synthesis and application of such heterostructures are discussed.

Selective detection of carbon monoxide (CO) gas by reduced graphene oxide (rGO) at room temperature

Graphene materials have been widely explored for fabrication of gas sensors because of their atom-thick two-dimensional conjugated structures, high conductivity and large specific surface area.

High efficiency room temperature detection of NO2gas based on ultrathin metal/graphene devices

High efficiency detection of NO₂by ultrathin metal decorated graphene sensors at room temperature.

Resistive graphene humidity sensors with rapid and direct electrical readout

We demonstrate humidity sensing using a change of the electrical resistance of single-layer chemical vapor deposited (CVD) graphene that is placed on top of a SiO2 layer on a Si wafer. To investigate the selectivity of the sensor towards the most common constituents in air, its signal response was characterized individually for water vapor (H2O), nitrogen (N2), oxygen (O2), and argon (Ar). In order to assess the humidity sensing effect for a range from 1% relative humidity (RH) to 96% RH, the devices were characterized both in a vacuum chamber and in a humidity chamber at atmospheric pressure. The measured response and recovery times of the graphene humidity sensors are on the order of several hundred milliseconds. Density functional theory simulations are employed to further investigate the sensitivity of the graphene devices towards water vapor. The interaction between the electrostatic dipole moment of the water and the impurity bands in the SiO2 substrate leads to electrostatic doping of the graphene layer. The proposed graphene sensor provides rapid response direct electrical readout and is compatible with back end of the line (BEOL) integration on top of CMOS-based integrated circuits.

Long- versus Short-Range Scattering in Doped Epitaxial Graphene

Tuning the electronic properties of graphene by adatom deposition unavoidably introduces disorder into the system, which directly affects the single-particle excitations and electrodynamics. Using angle-resolved photoemission spectroscopy (ARPES) we trace the evolution of disorder in graphene by thallium adatom deposition and probe its effect on the electronic structure. We show that the signatures of quasiparticle scattering in the photoemission spectral function can be used to identify thallium adatoms, although charged, as efficient short-range scattering centers. Employing a self-energy model for short-range scattering, we are able to extract a δ-like scattering potential δ = -3.2 ± 1 eV. Therefore, isolated charged scattering centers do not necessarily act just as good long-range (Coulomb) scatterers but can also act as efficient short-range (δ-like) scatterers; in the case of thallium, this happens with almost equal contributions from both mechanisms.

Comparative Study of Potential Applications of Graphene, MoS2, and Other Two-Dimensional Materials in Energy Devices, Sensors, and Related Areas

Novel properties of graphene have been well documented, whereas the importance of nanosheets of MoS2 and other chalcogenides is increasingly being recognized over the last two to three years. Borocarbonitrides, BxCyNz, with insulating BN and conducting graphene on either side are new materials whose properties have been attracting attention. These two-dimensional (2D) materials contain certain common features. Thus, graphene, MoS2, and borocarbonitrides have all been used in supercapacitor applications, oxygen reduction reactions (ORRs), and lithium-ion batteries. It is instructive, therefore, to make a comparative study of some of the important properties of these layered materials. In this article, we discuss properties related to energy devices at length. We examine the hydrogen evolution reaction facilitated by graphene, MoS2, and related materials. We also discuss gas and radiation sensors based on graphene and MoS2 as well as gas storage properties of graphene and borocarbonitrides. The article should be useful in making a judicious choice of which 2D material to use for a particular application.

Magnetoresistance and charge transport in graphene governed by nitrogen dopants

We identify the influence of nitrogen-doping on charge- and magnetotransport of single layer graphene by comparing doped and undoped samples. Both sample types are grown by chemical vapor deposition (CVD) and transferred in an identical process onto Si/SiO2 wafers. We characterize the samples by Raman spectroscopy as well as by variable temperature magnetotransport measurements. Over the entire temperature range, the charge transport properties of all undoped samples are in line with literature values. The nitrogen doping instead leads to a 6-fold increase in the charge carrier concentration up to 4 × 10(13) cm(-2) at room temperature, indicating highly effective doping. Additionally it results in the opening of a charge transport gap as revealed by the temperature dependence of the resistance. The magnetotransport exhibits a conspicuous sign change from positive Lorentz magnetoresistance (MR) in undoped to large negative MR that we can attribute to the doping induced disorder. At low magnetic fields, we use quantum transport signals to quantify the transport properties. Analyses based on weak localization models allow us to determine an orders of magnitude decrease in the phase coherence and scattering times for doped samples, since the dopants act as effective scattering centers.

Negative quantum capacitance induced by midgap states in single-layer graphene

We demonstrate that single-layer graphene (SLG) decorated with a high density of Ag adatoms displays the unconventional phenomenon of negative quantum capacitance. The Ag adatoms act as resonant impurities and form nearly dispersionless resonant impurity bands near the charge neutrality point (CNP). Resonant impurities quench the kinetic energy and drive the electrons to the Coulomb energy dominated regime with negative compressibility. In the absence of a magnetic field, negative quantum capacitance is observed near the CNP. In the quantum Hall regime, negative quantum capacitance behavior at several Landau level positions is displayed, which is associated with the quenching of kinetic energy by the formation of Landau levels. The negative quantum capacitance effect near the CNP is further enhanced in the presence of Landau levels due to the magnetic-field-enhanced Coulomb interactions.

Boron nitride film as a buffer layer in deposition of dielectrics on graphene

As a two-dimensional material, graphene is highly susceptible to environmental influences. It is therefore challenging to deposit dielectrics on graphene without affecting its electronic properties. It is demonstrated that the effect of the dielectric deposition on graphene can be reduced by using a multilayer hexagonal boron nitride film as a buffer layer. Particularly, the boron nitride layer provides significant protection in magnetron sputtering deposition. It also enables growth of uniform and charge trapping free high-k dielectrics by atomic layer deposition. The doping effect of various deposition methods on graphene has been discussed.

First principles calculations of phenol adsorption on pristine and group III (B, Al, Ga) doped graphene layers

We studied the doping effects on the electronic and structural properties of graphene upon interaction with phenol. Calculations were performed within the periodic density functional theory as implemented in PWscf code of the Quantum Espresso package. Graphene layers were modeled using 3 × 3 and 4 × 4 periodic supercells. Doping was explored considering boron (B), aluminum (Al) and gallium (Ga) atoms. The results showed that pristine graphene and graphene doped with B atoms interacting with phenol display similar structural and electronic properties, exhibiting weak physical interactions. However, when the doping is with Al or Ga , the results are quite different. Al and Ga doping induces a stronger interaction between the phenol molecule and the doped layer, yielding chemical adsorption. In all cases, the zero gap energy characteristic is unchanged. The Dirac lineal dispersion relation is preserved in both pristine graphene and B-doped graphene.

The backside of graphene: manipulating adsorption by intercalation

The ease by which graphene is affected through contact with other materials is one of its unique features and defines an integral part of its potential for applications. Here, it will be demonstrated that intercalation, the insertion of atomic layers in between the backside of graphene and the supporting substrate, is an efficient tool to change its interaction with the environment on the frontside. By partial intercalation of graphene on Ir(111) with Eu or Cs we induce strongly n-doped graphene patches through the contact with these intercalants. They coexist with nonintercalated, slightly p-doped graphene patches. We employ these backside doping patterns to directly visualize doping induced binding energy differences of ionic adsorbates to graphene through low-temperature scanning tunneling microscopy. Density functional theory confirms these binding energy differences and shows that they are related to the graphene doping level.

Tunable adsorbate-adsorbate interactions on graphene

We propose a mechanism to control the interaction between adsorbates on graphene. The interaction between a pair of adsorbates--the change in adsorption energy of one adsorbate in the presence of another--is dominated by the interaction mediated by graphene's π electrons and has two distinct regimes. Ab initio density functional, numerical tight-binding, and analytical calculations are used to develop the theory. We demonstrate that the interaction can be tuned in a wide range by adjusting the adsorbate-graphene bonding or the chemical potential.

Electronic properties of a graphene device with peptide adsorption: insight from simulation

In this work, to explain doping behavior of single-layer graphene upon HSSYWYAFNNKT (P1) and HSSAAAAFNNKT (P1-3A) adsorption in field-effect transistors (GFETs), we applied a combined computational approach, whereby peptide adsorption was modeled by molecular dynamics simulations, and the lowest energy configuration was confirmed by density functional theory calculations. On the basis of the resulting structures of the hybrid materials, electronic structure and transport calculations were investigated. We demonstrate that π-π stacking of the aromatic residues and proximate peptide backbone to the graphene surface in P1 have a role in the p-doping. These results are consistent with our experimental observation of the GFET's p-doping even after a 24-h annealing procedure. Upon substitution of three of the aromatic residues to Ala in (P1-3A), a considerable decrease from p-doping is observed experimentally, demonstrating n-doping as compared to the nonadsorbed device, yet not explained based on the atomistic MD simulation structures. To gain a qualitative understanding of P1-3A's adsorption over a longer simulation time, which may differ from aromatic amino acid residues' swift anchoring on the surface, we analyzed equilibrated coarse-grain simulations performed for 500 ns. Desorption of the Ala residues from the surface was shown computationally, which could in turn affect charge transfer, yet a full explanation of the mechanism of n-doping will require elucidation of differences between various aromatic residues as dependent on peptide composition, and inclusion of effects of the substrate and environment, to be considered in future work.

Substrate level control of the local doping in graphene

Graphene exfoliated onto muscovite mica is studied using ultrahigh vacuum scanning tunneling microscopy (UHV-STM) techniques. Mica provides an interesting dielectric substrate interface to measure the properties of graphene due to the ultraflat nature of a cleaved mica surface and the surface electric dipoles it possesses. Flat regions of the mica surface show some surface modulation of the graphene topography (24 pm) due to topographic modulation of the mica surface and full conformation of the graphene to that surface. In addition to these ultraflat regions, plateaus of varying size having been found. A comparison of topographic images and STS measurements show that these plateaus are of two types: one with characteristics of water monolayer formation between the graphene and mica, and the other arising from potassium ions trapped at the interfacial region. Immediately above the water induced plateaus, graphene is insulated from charge doping, while p-type doping is observed in areas adjacent to these water nucleation points. However, above and in the neighborhood of interfacial potassium ions, only n-type doping is observed. Graphene regions above the potassium ions are more strongly n-doped than regions adjacent to these alkali atom plateaus. Furthermore, a direct correlation of these Fermi level shifts with topographic features is seen without the random charge carrier density modulation observed in other dielectric substrates. This suggests a possible route to nanoscopic control of the local electron and hole doping in graphene via specific substrate architecture.

Enhanced screening in chemically functionalized graphene

Resonant scatterers such as hydrogen adatoms can strongly enhance the low-energy density of states in graphene. Here, we study the impact of these impurities on electronic screening. We find a two-faced behavior: Kubo formula calculations reveal an increased dielectric function ε upon creation of midgap states but no metallic divergence of the static ε at small momentum transfer q→0. This bad metal behavior manifests also in the dynamic polarization function and can be directly measured by means of electron energy loss spectroscopy. A new length scale l(c) beyond which screening is suppressed emerges, which we identify with the Anderson localization length.

Visualizing local doping effects of individual water clusters on gold(111)-supported graphene

The local charge carrier density of graphene can exhibit significant and highly localized variations that arise from the interaction between graphene and the local environment, such as adsorbed water, or a supporting substrate. However, it has been difficult to correlate such spatial variations with individual impurity sites. By trapping (under graphene) nanometer-sized water clusters on the atomically well-defined Au(111) substrate, we utilize scanning tunneling microscopy and spectroscopy to characterize the local doping influence of individual water clusters on graphene. We find that water clusters, predominantly nucleated at the atomic steps of Au(111), induce strong and highly localized electron doping in graphene. A positive correlation is observed between the water cluster size and the local doping level, in support of the recently proposed electrostatic-field-mediated doping mechanism. Our findings quantitatively demonstrate the importance of substrate-adsorbed water on the electronic properties of graphene.

Effects of molecular adsorption on the electronic structure of single-layer graphene

The interaction of small molecules (CCl(4), CS(2), H(2)O, and acetone) with single-layer graphene (SLG) has been studied under steady-state conditions using infrared multiple-internal-reflection spectroscopy. Adsorption results in a broad and intense absorption band, spanning the ∼200 to 500 meV range, which is attributed to electronic excitation. This effect, which has not previously been reported for SLG, has been further investigated using dispersion-corrected density functional theory to model the adsorption of H(2)O on SLG supported on an SiO(2) substrate. However, the ideal and defect-free model does not reproduce the observed adsorption-induced electronic transition. This and other observations suggest that the effect is extrinsic, possibly the result of an adsorption-induced change in the in-plane strain, with important differences arising between species that form liquid-like layers under steady-state conditions and those that do not. Furthermore, the C-H stretching modes of CH(2) groups, incorporated in the SLG as defects, undergo nonadiabatic coupling to the electronic transition. This leads to pronounced antiresonance effects in the line shapes, which are analyzed quantitatively. These results are useful in understanding environmental effects on graphene electronic structure and in demonstrating the use of the vibrational spectroscopy of H-containing defects in characterizing SLG structure.

Electrically controlled adsorption of oxygen in bilayer graphene devices

We investigate the chemisorptions of oxygen molecules on bilayer graphene (BLG) and its electrically modified charge-doping effect using conductivity measurement of the field effect transistor channeled with BLG. We demonstrate that the change of the Fermi level by manipulating the gate electric field significantly affects not only the rate of molecular adsorption but also the carrier-scattering strength of adsorbed molecules. Exploration of the charge transfer kinetics reveals the electrochemical nature of the oxygen adsorption on BLG.