Zintl phases with group 15 elements and the transition metals: A brief overview of pnictides with diverse and complex structures

An Organometallic Erbium Bismuth Cluster Complex Comprising a Bi66- Zintl Ion

An organometallic erbium bismuth cluster complex, [K(THF)4]2[Cp*2Er2Bi6] (1), featuring a heterometallocubane core was isolated. The cube emerges from the rare Bi66- Zintl ion, bridging two erbium centers for the first time. SQUID magnetometry and ab initio calculations uncovered dominant antiferromagnetic coupling enabled through the chair-like hexabismuth anion. The gained insight will promote the design of future polynuclear magnetic molecules comprising prolate lanthanide ions.

Synthesis, Crystal and Electronic Structures, and Magnetic and Electrical Transport Properties of Bismuthides NdZn0.6Bi2 and (La0.5RE0.5)Zn0.6Bi2 (RE = Pr or Nd)

Bismuth is a good constituent element for many quantum materials due to its large atomic number, 6s26p3 orbitals, and strong spin-orbital coupling. In this work, three new bismuthides, NdZn0.6Bi2, (La0.5Pr0.5)Zn0.6Bi2, and (La0.5Nd0.5)Zn0.6Bi2, were grown by a metal flux method, and their crystal structures were accurately determined by single-crystal X-ray diffraction. These new bismuthides belong to the RE-T-Pn2 (RE = La-Lu, T = Mn, Fe, Co, Ni, or Zn, and Pn = P, As, Sb, or Bi) family, are isostructural, and crystallize in the HfCuSi2 structure type. The bismuth elements have two possible oxidation states, Bi3- and Bi-, which were studied by X-ray photoelectron spectroscopy (XPS). Two binding energy peaks of 155.91 and 161.23 eV were observed for Bi atoms within NdZn0.6Bi2, and similar binding energy peaks were detected in NdBi and LiBi. XPS also confirmed the trivalent nature of Nd, which was further verified by magnetic measurements. Additionally, magnetic measurements revealed that NdZn0.6Bi2 exhibits an antiferromagnetic transition around 3 K, while the mixed-cation compounds do not show any magnetic transition down to 2 K. Electronic transport measurements reveal weak magnetoresistance in all three compounds, with a maximum value of ∼25% at 2 K and 9 T for (La0.5Nd0.5)Zn0.6Bi2.

Zintl Phase versus Covalent Metal: Chemical Bonding in Silicon Dumbbells of Ca5Si3 and CaSi3

Silicon dumbbells constitute identifiable anionic molecular species in Zintl phases and so-called covalent metals holding units with homopolar bonding inside a metallic framework. Based on electron-precise Ca5Si3 and metallic CaSi3, the chemical bonding in Si2 units is investigated by computational quantum chemical methods considering the dual nature of the wave function. This concerted wave-vector and real space study substantiates that the Si2 dumbbells in Ca5Si3 can be referred to as molecular building units Si26- with additional metallic and ionic contributions in the solid. In the covalent metal CaSi3, however, the bonding within the dumbbells falls short of fulfilling the octet rule. As a result, antibonding states of the Si2 building units are depopulated and attend metallic interactions, simultaneously giving rise to stronger covalent Si-Si bonds.

Advancing Heteroanionicity in Zintl Phases: Crystal Structures, Thermoelectric and Magnetic Properties of Two Quaternary Semiconducting Arsenide Oxides, Eu8Zn2As6O and Eu14Zn5As12O

Two novel quaternary oxyarsenides, Eu8Zn2As6O and Eu14Zn5As12O, were synthesized through metal flux reactions, and their crystal structures were established by single-crystal X-ray diffraction methods. Eu8Zn2As6O crystallizes in the orthorhombic space group Pbca, featuring polyanionic ribbons composed of corner-shared triangular [ZnAs3] units, running along the [100] direction. The structure of Eu14Zn5As12O crystallizes in the monoclinic space group P2/m and its anionic substructure can be described as an infinite "ribbonlike" chain comprised of [ZnAs3] trigonal-planar units, although the structural complexity here is greater and also amplified by disorder on multiple crystallographic positions. In both structures, the O2- anion occupies an octahedral void with six neighboring Eu2+ cations. Formal electron counting, electronic structure calculations, and transport properties reveal the charge-balanced semiconducting nature of these heteroanionic Zintl phases. High-temperature thermoelectric transport properties measurements on Eu14Zn5As12O reveal relatively high resistivity (ρ500K = 8 Ω·cm) and Seebeck coefficient values (S500K = 220 μV K-1), along with a low concentration and mobility of holes as the dominant charge-carriers (n500K = 8.0 × 1017 cm-3, μ500K = 6.4 cm2/V s). Magnetic studies indicate the presence of divalent Eu2+ species in Eu14Zn5As12O and complex magnetic ordering, with two transitions observed at T1 = 21.6 K and T2 = 9 K.

Colloidal Synthesis of P-Type Zn3As2 Nanocrystals

Zinc pnictides, particularly Zn3As2, hold significant promise for optoelectronic applications owing to their intrinsic p-type behavior and appropriate bandgaps. However, despite the outstanding properties of colloidal Zn3As2 nanocrystals, research in this area is lacking because of the absence of suitable precursors, occurrence of surface oxidation, and intricacy of the crystal structures. In this study, a novel and facile solution-based synthetic approach is presented for obtaining highly crystalline p-type Zn3As2 nanocrystals with accurate stoichiometry. By carefully controlling the feed ratio and reaction temperature, colloidal Zn3As2 nanocrystals are successfully obtained. Moreover, the mechanism underlying the conversion of As precursors in the initial phases of Zn3As2 synthesis is elucidated. Furthermore, these nanocrystals are employed as active layers in field-effect transistors that exhibit inherent p-type characteristics with native surface ligands. To enhance the charge transport properties, a dual passivation strategy is introduced via phase-transfer ligand exchange, leading to enhanced hole mobilities as high as 0.089 cm2 V-1 s-1. This study not only contributes to the advancement of nanocrystal synthesis, but also opens up new possibilities for previously underexplored p-type nanocrystal research.

Zintl Phases: From Curiosities to Impactful Materials

The synthesis of new compounds and crystal structures remains an important research endeavor in pursuing technologically relevant materials. The Zintl concept is a guidepost for the design of new functional solid-state compounds. Zintl phases are named in recognition of Eduard Zintl, a German chemist who first studied a subgroup of intermetallics prepared with electropositive metals combined with main-group metalloids from groups 13-15 in the 1930s. Unlike intermetallic compounds, where metallic bonding is the norm, Zintl phases exhibit a combination of ionic and covalent bonding and are typically semiconductors. Zintl phases provide a palette for iso- and aliovalent substitutions that can each contribute uniquely to the properties. Zintl electron-counting rules can be employed to interrogate a structure type and develop a foundation of structure-property relationships. Employing substitutional chemistry allows for the rational design of new Zintl compounds with technological properties, such as magnetoelectronics, thermoelectricity, and other energy storage and conversion capabilities. Discovering new structure types and compositions through this approach is also possible. The background on the strength and innovation of the Zintl concept and a few highlights of Zintl phases with promising thermoelectric properties in the context of structural and electronic design will be provided.

Experiment and Theory in Concert To Unravel the Remarkable Electronic Properties of Na-Doped Eu11Zn4Sn2As12: A Layered Zintl Phase

Low-dimensional materials have unique optical, electronic, mechanical, and chemical properties that make them desirable for a wide range of applications. Nano-scaling materials to confine transport in at least one direction is a common method of designing materials with low-dimensional electronic structures. However, bulk materials give rise to low-dimensional electronic structures when bonding is highly anisotropic. Layered Zintl phases are excellent candidates for investigation due to their directional bonding, structural variety, and tunability. However, the complexity of the structure and composition of many layered Zintl phases poses a challenge for producing phase-pure bulk samples to characterize. Eu11Zn4Sn2As12 is a layered Zintl phase of significant complexity that is of interest for its magnetic, electronic, and thermoelectric properties. To prepare phase-pure Eu11-xNaxZn4Sn2As12, a binary EuAs phase was employed as a precursor, along with NaH. Experimental measurements reveal low thermal conductivity and a high Seebeck coefficient, while theoretical electronic structure calculations reveal a transition from a 3D to 2D electronic structure with increasing carrier concentration. Simulated thermoelectric properties also indicate anisotropic transport, and thermoelectric property measurements confirm the nonparabolicity of the relevant bands near the Fermi energy. Thermoelectric efficiency is known to improve as the dimensionality of the electronic structure is decreased, making this a promising material for further optimization and opening the door to further exploitation of layered Zintl phases with low-dimensional electronic structures for thermoelectric applications.

Thermoelectric Properties of Ba2-xEuxZnSb2, a Zintl Phase with One-Dimensional Covalent Chains

The compound Ba₂ZnSb₂ has been predicted to be a promising thermoelectric material, potentially achieving zT > 2 at 900 K due to its one-dimensional chains of edge-shared [ZnSb_4/2]^4- tetrahedra and interspersed Ba cations. However, the high air sensitivity of this material makes it difficult to measure its thermoelectric properties. In this work, isovalent substitution of Eu for Ba was carried out to make Ba_2-xEu_xZnSb₂ in order to improve the stability of the material in air and to allow characterization of thermal and electronic properties of three different compositions (x = 0.2, 0.3, and 0.4). Polycrystalline samples were synthesized using binary precursors via ball milling and annealing, and their thermoelectric properties were measured. Samples showed low thermal conductivity (<0.8 W/m K), a high Seebeck coefficient (350-550 μV/K), and high charge carrier mobility (20-35 cm²/V) from 300 to 500 K, consistent with predictions of high thermoelectric efficiency. Evaluation of the thermoelectric quality factor suggests that a higher zT can be attained if the carrier concentration can be increased via doping.

Tuning the Intermediate Valence Behavior in the Zintl Compound Yb14ZnSb11 by Incorporation of RE3+ [Yb14-xRExZnSb11 (0.2 ≤ x ≤ 0.7), RE = Sc, Y, La, Lu and Gd]

The solid solutions of Yb_14-xRE_xZnSb₁₁ (RE = Sc, Y, La, Lu, and Gd; 0.2 ≤ x ≤ 0.7) were prepared to probe the intermediate valency of Yb in Yb₁₄ZnSb₁₁. The substitution of Yb with RE³⁺ elements should reduce or remove the intermediate valency of the remaining Yb ions. Large crystals are grown from Sn-flux, and the structure and magnetic susceptibility are presented. All compounds crystallize in the Ca₁₄AlSb₁₁ structure type and the RE³⁺ ions show Yb site substitution preferences that correlate with size. Two compositions of Yb_14-xY_xZnSb₁₁ were investigated [x = 0.38(3), 0.45(3)] by temperature-dependent magnetic susceptibility and the broad feature in magnetic susceptibility measurements at 85 K in pristine Yb₁₄ZnSb₁₁ attributed to valence fluctuation decreases and is absent for x = 0.45(3). In compounds with nonmagnetic RE³⁺ substitutions (Sc, Y, La, and Lu), temperature-dependent magnetic susceptibility shows a transition from intermediate valency fluctuation toward temperature-independent (Y, La, and Lu) or Curie-Weiss behavior and possibly low temperature heavy Fermion behavior (Sc). In the example of the magnetic rare earth substitution, RE = Gd, the Curie-Weiss-dependent magnetic moment of Gd³⁺ is consistent with x. Hall resistivity of Yb_14-xY_xZnSb₁₁ showed that the carrier concentration decreases with x and the signature of the low-T intermediate valence state seen for x = 0 is suppressed for x = 0.38 and gone for x = 0.45.

Synthesis and Crystal Structure of the Zintl Phases NaSrSb, NaBaSb and NaEuSb

This work details the synthesis and the crystal structures of the ternary compounds NaSrSb, NaBaSb and NaEuSb. They are isostructural and adopt the hexagonal ZrNiAl-type structure (space group P6¯2m; Pearson code hP9). The structure determination in all three cases was performed using single-crystal X-ray diffraction methods. The structure features isolated Sb3- anions arranged in layers stacked along the crystallographic c-axis. In the interstices, alkali and alkaline-earth metal cations are found in tetrahedral and square pyramidal coordination environments, respectively. The formal partitioning of the valence electrons adheres to the valence rules, i.e., Na+Sr2+Sb3-, Na+Ba2+Sb3- and Na+Eu2+Sb3- can be considered as Zintl phases with intrinsic semiconductor behavior. Electronic band structure calculations conducted for NaBaSb are consistent with this notion and show a direct gap of approx. 0.9 eV. Additionally, the calculations hint at possible inverted Dirac cones, a feature that is reminiscent of topological quantum materials.

Synthesis and structural characterization of the new Zintl phases Eu10Mn6Bi12 and Yb10Zn6Sb12

Two new ternary compounds, Eu₁₀Mn₆Bi₁₂ and Yb₁₀Zn₆Sb₁₂, were synthesized and structurally characterized. The synthesis was achieved either through reactions in sealed niobium tubes or in alumina crucibles by combining the elements in excess molten Sb. Their structures were elucidated using single-crystal X-ray diffraction, and they were determined to crystallize in the orthorhombic space group Cmmm (no. 65) with the Eu₁₀Cd₆Bi₁₂ structure type. Akin to the archetype phase, both Mn and Zn sites contain about 25% of vacancies. The anionic substructure of the title phases can be described as [M₆Pn₁₂] (M = Zn, Mn; Pn = Sb, Bi) double layers composed of the corner and edge-sharing [MPn₄] tetrahedra, linked by [Pn₂]^4- dumbbells. Eu²⁺/Yb²⁺ cations fill the space between the layers, with the valence electron counts adhering closely to the Zintl-Klemm rules, i.e., both Eu₁₀Mn₆Bi₁₂ and Yb₁₀Zn₆Sb₁₂ are expected to be valence-precise compounds. Analysis of the electronic structure and transport properties of Yb₁₀Zn₆Sb₁₂ indicate semimetallic behavior with relatively low Seebeck coefficient and resistivity that slightly decreases as a function of temperature.

Structural Complexity and Tuned Thermoelectric Properties of a Polymorph of the Zintl Phase Ca2CdSb2 with a Non-centrosymmetric Monoclinic Structure

The Zintl phase Ca₂CdSb₂ was found to be dimorphic. Besides the orthorhombic Ca₂CdSb₂ (-o), here we report on the synthesis, the structural characterization, and the thermoelectric transport properties of its monoclinic form, Ca₂CdSb₂ (-m), and its Lu-doped variant Ca_2-xLu_xCdSb₂ (x ≈ 0.02). The monoclinic structure exhibits complex structural characteristics and constitutes a new structure type with the non-centrosymmetric space group Cm (Z = 30). The electrical resistivity ρ(T) measured on single crystals of both phases portrays a transition from a semiconductor to a degenerate p-type semiconductor upon doping with Lu and with an attendant change in the Hall carrier concentration n_H from 7.15 × 10¹⁸ to 2.30 × 10¹⁹ cm^-3 at 300 K. The Seebeck coefficient S(T) of both phases are comparable and indicate a hole-dominated carrier transport mechanism with magnitudes of 133 and 116 μV/K at 600 K for Ca₂CdSb₂ (-m) and Ca_2-xLu_xCdSb₂, respectively. The convoluted atomic bonding with an attendant large unit cell volume of ∼4365 ų drives a putative low thermal conductivity in these materials resulting in a power factor PF of 1.63 μW/cm K² and an estimated thermoelectric figure of merit zT of ∼0.5 for Ca_2-xLu_xCdSb₂ at 600 K. Differential scanning calorimetry results reveal the stability of these phases up to about 960 K, making them candidates for moderate temperature thermoelectric materials.

Uncovering a Vital Band Gap Mechanism of Pnictides

Pnictides are superior infrared (IR) nonlinear optical (NLO) material candidates, but the exploration of NLO pnictides is still tardy due to lack of rational material design strategies. An in-depth understanding structure-performance relationship is urgent for designing novel and eminent pnictide NLO materials. Herein, this work unravels a vital band gap mechanism of pnictides, namely P atom with low coordination numbers (2 CN) will cause the decrease of band gap due to the delocalization of non-bonding electron pairs. Accordingly, a general design paradigm for NLO pnictides, ionicity-covalency-metallicity regulation is proposed for designing wide-band gap NLO pnictides with maintained SHG effect. Driven by this idea, millimeter-level crystals of MgSiP2 are synthesized with a wide band gap (2.34 eV), a strong NLO performance (3.5 x AgGaS2 ), and a wide IR transparency range (0.53-10.3 µm). This work provides an essential guidance for the future design and synthesis of NLO pnictides, and also opens a new perspective at Zintl chemistry important for other material fields.

Structural diversity among multinary pnictide oxides: a minireview focused on semiconducting and superconducting heteroanionic materials

Incorporating different anions with varied ionic sizes and charges is a rapidly growing approach to bring out unusual physical properties among various classes of solid-state materials, pnictides and chalcogenides in particular. This minireview is focused on hetero-anionic materials based on the pnictogens, which have been demonstrated to offer an impressive diversity of crystal chemistry and electronic structures. In addition, many pnictide oxides or oxypnictides, over the course of the last decade, have been shown to exhibit a broad spectrum of superconducting, magnetic, and semiconducting properties. However, the structural diversity of the mixed-anion materials is far greater than the several known structure types, or their variants, of the well-known layered superconductive materials. Therefore, with this treatise, we aim to provide a comprehensive overview of the crystal chemistry of pnictide oxides by recounting almost 40 different structures of such ternary and multinary compounds. In addition to the structural aspects, we also highlight some of the challenges associated with the synthesis, and briefly summarize reported, to date, physical properties of this remarkable class of solids.

Two Polymorphs of BaZn2P2: Crystal Structures, Phase Transition, and Transport Properties

The novel α-BaZn₂P₂ structural polymorph has been synthesized and structurally characterized for the first time. Its structure, elucidated from single crystal X-ray diffraction, indicates that the compound crystallizes in the orthorhombic α-BaCu₂S₂ structure type, with unit cell parameters a = 9.7567(14) Å, b = 4.1266(6) Å, and c = 10.6000(15) Å. With β-BaZn₂P₂ being previously identified as belonging to the ThCr₂Si₂ family and with the precedent of structural phase transitions between the α-BaCu₂S₂ type and the ThCr₂Si₂ type, the potential for the pattern to be extended to the two different structural forms of BaZn₂P₂ was explored. Thermal analysis suggests that a first-order phase transition occurs at ∼1123 K, whereby the low-temperature orthorhombic α-phase transforms to a high-temperature tetragonal β-BaZn₂P₂, the structure of which was also studied and confirmed by single-crystal X-ray diffraction. Preliminary transport properties and band structure calculations indicate that α-BaZn₂P₂ is a p-type, narrow-gap semiconductor with a direct bandgap of 0.5 eV, which is an order of magnitude lower than the calculated indirect bandgap for the β-BaZn₂P₂ phase. The Seebeck coefficient, S(T), for the material increases steadily from the room temperature value of 119 μV/K to 184 μV/K at 600 K. The electrical resistivity (ρ) of α-BaZn₂P₂ is relatively high, on the order of 40 mΩ·cm, and the ρ(T) dependence shows gradual decrease upon heating. Such behavior is comparable to those of the typical semimetals or degenerate semiconductors.

Solid Solution Yb2-xCaxCdSb2: Structure, Thermoelectric Properties, and Quality Factor

Solid solutions of Yb_2-xA_xCdSb₂ (A = Ca, Sr, Eu; x ≤ 1) are of interest for their promising thermoelectric (TE) properties. Of these solid solutions, Yb_2-xCa_xCdSb₂ has end members with different crystal structures. Yb₂CdSb₂ crystallizes in the polar space group Cmc2₁, whereas Ca₂CdSb₂ crystallizes in the centrosymmetric space group Pnma. Other solid solutions, Yb_2-xA_xCdSb₂ (A = Sr, Eu), crystallize in the polar space group for x ≤ 1, and compositions with x ≥ 1 have not been reported. Both structure types are composed of corner-sharing CdSb₄ tetrahedra condensed into sheets that differ by the stacking of the layers. Single crystals of the solid solution Yb_2-xCa_xCdSb₂ (x = 0-1) were studied to elucidate the structural transition between the Yb₂CdSb₂ and Ca₂CdSb₂ structure types. For x ≤ 1, the structures remain in the polar space group Cmc2₁. As the Ca content is increased, a positional disorder arises in the intralayer cation sites (Yb2/Ca2) and the Cd site, resulting in inversion of the CdSb₄ tetrahedral chain. This phenomenon could be indicative of an intergrowth of the opposing space group. The TE properties of polycrystalline samples of Yb_2-xCa_xCdSb₂ (x ≤ 1) were measured from 300 to 525 K. The lattice thermal conductivity is extremely low (0.3-0.4 W/m·K) and the Seebeck coefficients are high (100-180 μV/K) across the temperature range. First-principles calculations show a minimum in the thermal conductivity for the x = 0.3 composition, in good agreement with experimental data. The low thermal conductivity stems from the acoustic branches being confined to low frequencies and a large number of phonon scattering channels provided by the localized optical branches. The TE quality factor of the Yb_1.7A_0.3CdSb₂ (A = Ca, Sr, Eu) series has been calculated and predicts that the A = Ca and Sr solid solutions may not improve with carrier concentration optimization but that the Eu series is worthy of additional modifications. Overall, the x = 0.3 compositions provide the highest zT because they provide the best electronic properties with the lowest thermal conductivity.

Ternary ACd4P3 (A = Na, K) Nanostructures via a Hydride Solution-Phase Route

Complex pnictides such as I-II₄-V₃ compounds (I = alkali metal; II = divalent transition metal; V = pnictide element) display rich structural chemistry and interesting optoelectronic properties, but can be challenging to synthesize using traditional high-temperature solid-state synthesis. Soft chemistry methods can offer control over particle size, morphology, and properties. However, the synthesis of multinary pnictides from solution remains underdeveloped. Here, we report the colloidal hot-injection synthesis of ACd₄P₃ (A = Na, K) nanostructures from their alkali metal hydrides (AH). Control studies indicate that NaCd₄P₃ forms from monometallic Cd⁰ seeds and not from binary Cd₃P₂ nanocrystals. IR and ssNMR spectroscopy reveal tri-n-octylphosphine oxide (TOPO) and related ligands are coordinated to the ternary surface. Computational studies show that competing phases with space group symmetries R3̅m and Cm differ by only 30 meV/formula unit, indicating that synthetic access to either of these polymorphs is possible. Our synthesis unlocks a new family of nanoscale multinary pnictide materials that could find use in optoelectronic and energy conversion devices.

Ternary Zinc Antimonides Unlocked Using Hydride Synthesis

Three new sodium zinc antimonides Na₁₁Zn₂Sb₅, Na₄Zn₉Sb₉, and NaZn₃Sb₃ were synthesized utilizing sodium hydride NaH as a reactive sodium source. In comparison to the synthesis using sodium metal, salt-like NaH can be ball-milled, leading to the easy and uniform mixing of precursors in the desired stoichiometric ratios. Such comprehensive compositional control enables a fast screening of the Na-Zn-Sb system and identification of new compounds, followed by their preparation in bulk with high purity. Na₁₁Zn₂Sb₅ crystallizes in the triclinic P1 space group (No. 2, Z = 2, a = 8.8739(6) Å, b = 10.6407(7) Å, c = 11.4282(8) Å, α = 103.453(2)°, β = 96.997(2)°, γ = 107.517(2)°) and features polyanionic [Zn₂Sb₅]^11- clusters with unusual 3-coordinated Zn atoms. Both Na₄Zn₉Sb₉ (Z = 4, a = 28.4794(4) Å, b = 4.47189(5) Å, c = 17.2704(2) Å, β = 98.3363(6)°) and NaZn₃Sb₃ (Z = 8, a = 32.1790(1) Å, b = 4.51549(1) Å, c = 9.64569(2) Å, β = 98.4618(1)°) crystallize in the monoclinic C2/m space group (No. 12) and have complex new structure types. For both compounds, their frameworks are built from ZnSb₄ distorted tetrahedra, which are linked via edge-, vertex-sharing, or both, while Na cations fill in the framework channels. Due to the complex structures, Na₄Zn₉Sb₉ and NaZn₃Sb₃ compounds exhibit low thermal conductivities (0.97-1.26 W·m^-1 K^-1) at room temperature, positive Seebeck coefficients (19-32 μV/K) suggestive of holes as charge carriers, and semimetallic electrical resistivities (∼1.0-2.3 × 10^-4 Ω·m). Na₄Zn₉Sb₉ and NaZn₃Sb₃ decompose into the equiatomic NaZnSb above ∼800 K, as determined by in situ synchrotron powder X-ray diffraction. The discovery of multiple ternary compounds highlights the importance of judicious choice of the synthetic method.

Structural Uniqueness of the [Nb(As5)2]5- Cluster in the Zintl Phase Cs5NbAs10

The structure of the novel Zintl phase, Cs₅NbAs₁₀, is reported for the first time. This compound crystallizes in the monoclinic P2₁/c space group (no. 14) with eight formula units per cell. The structure represents a unique atomic arrangement, constituting a new structure type with Wyckoff sequence e32. The most important structural element is the unprecedented [Nb(As₅)₂]^5- cluster anion, formed by a Nb atom enclosed between two As₅ rings. These nonaromatic cyclic species, formally [As₅]^5-, adopt an envelope conformation similar to that of cyclopentane. To date, it is only the second example of an [As₅]^5- ring with this conformation, reported in an inorganic solid-state compound. The bonding characteristics of the [Nb(As₅)₂]^5- cluster and the [As₅]^5- rings are thoroughly investigated using first-principles methods and discussed. Electronic band structure calculations on Cs₅NbAs₁₀ suggest that this compound is a semiconductor with an estimated band gap of ca. 1.4 eV.

Enhanced Thermoelectric Performance of LiZnSb-Alloyed CaZn0.4Ag0.2Sb by Band Engineering

LiZnSb is a Zintl phase that has been predicted to be a good material in thermoelectric applications for a long time. However, experimental work indicated that the synthesized LiZnSb materials were p type, and their maximum zT value is only 0.08 at 525 K. CaZn_0.4Ag_0.2Sb, which belongs to the LiGaGe structure type and is also closely associated with the LiZnSb structure, did show high zT plateaus in a wide range of temperature, with the mixed transition metal Zn/Ag sites regulated. By comparing their crystallographic and electronic band structures, it is evident that the interlayered distances in both compounds have a great effect on the regulation of the corresponding electrical transport properties. When alloying CaZn_0.4Ag_0.2Sb with LiZnSb, solid solutions form within a specific range, which led to a marked enhancement in the Seebeck coefficient through the orbital alignment and carrier concentration optimization. In addition, a low thermal conductivity was obtained owing to the reduced electronic component. With the above optimization, a maximum zT value of ∼1.3 can be realized for (CaZn_0.4Ag_0.2Sb)_0.87(LiZnSb)_0.13 at 873 K, more than twice that of the pristine CaZn_0.4Ag_0.2Sb and about 10-fold compared to that of LiZnSb. This work may shed new light on the optimization of thermoelectric properties based on Zintl phases, for which the crystal structures are usually very complicated and a direct correlation between the structures and properties is difficult to make.

Complex Structural Disorder in the Zintl Phases Yb10MnSb9 and Yb21Mn4Sb18

A systematic investigation of the ternary system Yb-Mn-Sb led to the discovery of the novel phase Yb₁₀MnSb₉. Its crystal structure was characterized by single-crystal X-ray diffraction and found to be complex and highly disordered. The average Yb₁₀MnSb₉ structure can be considered to represent a defect modification of the Ca₁₀LiMgSb₉ type and to crystallize in the tetragonal P4₂/mnm space group (No. 136) with four formula units per cell. The structural disorder can be associated with both occupational and positional effects on several Yb and Mn sites. Similar traits were observed for the structure of the recently reported Yb₂₁Mn₄Sb₁₈ phase (monoclinic space group C2/c, No. 15), which was reevaluated as part of this study as well. In both structures, distorted Sb₆ octahedra centered by Yb atoms and Sb₄ tetrahedra centered by Mn atoms form disordered fragments, which appear as the hallmark of the structural chemistry in this system. Discussion along the lines of how difficult, and important, it is to distinguish Yb₁₀MnSb₉ from the compositionally similar binary Yb₁₁Sb₁₀ and ternary Yb₁₄MnSb₁₁ compounds is also presented. Preliminary transport measurements for polycrystalline Yb₁₀MnSb₉ indicate high values of the Seebeck coefficient, approaching 210 μV K^-1 at 600 K, and a semiconducting behavior with a room-temperature resistivity of 114 mΩ cm.

Synthesis and structural characterization of orthorhombic Cu3–δ Sb (δ ≈ 0.1) and hexagonal Cu3Sb1–xInx (x ≈ 0.2) phases

Cu3Sb is a known copper-rich phase in the Cu–Sb binary phase diagram. It is reported to be dimorphic, with a low-temperature form adopting the orthorhombic Cu3Ti structure type (space group Pmmn, No. 59). The high-temperature form crystallizes in the cubic space group F m 3 ‾ m $Fm&#x203e;{3}m$ (No. 225), and is isostructural with BiF3. Neither polymorph has been carefully characterized to date, with both structures being assigned to the respective structure type, but never refined. With this study, we provide structural evidence, based on single-crystal and powder X-ray diffraction data that the low-temperature orthorhombic phase exists with a significant amount of defects on one of the Cu-sites. As a result, its composition is not Cu3Sb, but rather Cu3–δ Sb (δ = 0.13(1)). The cubic form could not be accessed as a part of this study, but another Cu-rich phase, Cu3Sb≈0.8In≈0.2, was also identified. It adopts the hexagonal Ni3Sn structure type (space group P63/mmc, No. 194) and represents an In-substituted variant of a hitherto unknown structural modification of Cu3Sb. Whether the latter can exist as a binary phase, or what is the minimum amount of In inclusions needed to stabilize it remains to be determined. Measurements of the thermopower of Cu3–δ Sb (δ = 0.13(1)) were conducted in the range of 300–600 K and demonstrated a maximum value of ca. 50 μV/K at 600 K, indicative of a p-type transport mechanism. Electrical resistivity measurements for the same sample confirmed that it exhibits metallic-like behavior, with a room temperature value of 0.43 mΩ cm. Electronic structure calculations show the absence of a band gap. Thermal analysis was utilized to ascertain the congruent melting of both phases.

Synthesis, structural characterization, and electronic structure of the novel Zintl phase Ba2ZnP2

The novel Zintl phase dibarium zinc diphosphide (Ba₂ZnP₂) was synthesized for the first time. This was accomplished using the Pb flux technique, which allowed for the growth of crystals of adequate size for structural determination via single-crystal X-ray diffraction methods. The Ba₂ZnP₂ compound was determined to crystallize in a body-centered orthorhombic space group, Ibam (No. 72). Formally, this crystallographic arrangement belongs to the K₂SiP₂ structure type. Therefore, the structure can be best described as infinite [ZnP₂]^4- polyanionic chains with divalent Ba²⁺ cations located between the chains. All valence electrons are partitioned, which conforms to the Zintl-Klemm concept and suggests that Ba₂ZnP₂ is a valence-precise composition. The electronic band structure of this new compound, computed with the aid of the TB-LMTO-ASA code, shows that Ba₂ZnP₂ is an intrinsic semiconductor with a band gap of ca 0.6 eV.

On the New Oxyarsenides Eu5Zn2As5O and Eu5Cd2As5O

The new quaternary phases Eu5Zn2As5O and Eu5Cd2As5O have been synthesized by metal flux reactions and their structures have been established through single-crystal X-ray diffraction. Both compounds crystallize in the centrosymmetric space group Cmcm (No. 63, Z = 4; Pearson symbol oC52), with unit cell parameters a = 4.3457(11) Å, b = 20.897(5) Å, c = 13.571(3) Å; and a = 4.4597(9) Å, b = 21.112(4) Å, c = 13.848(3) Å, for Eu5Zn2As5O and Eu5Cd2As5O, respectively. The crystal structures include one-dimensional double-strands of corner-shared MAs4 tetrahedra (M = Zn, Cd) and As–As bonds that connect the tetrahedra to form pentagonal channels. Four of the five Eu atoms fill the space between the pentagonal channels and one Eu atom is contained within the channels. An isolated oxide anion O2– is located in a tetrahedral hole formed by four Eu cations. Applying the valence rules and the Zintl concept to rationalize the chemical bonding in Eu5M2As5O (M = Zn, Cd) reveals that the valence electrons can be counted as follows: 5 × [Eu2+] + 2 × [M2+] + 3 × [As3–] + 2 × [As2–] + O2–, which suggests an electron-deficient configuration. The presumed h+ hole is confirmed by electronic band structure calculations, where a fully optimized bonding will be attained if an additional valence electron is added to move the Fermi level up to a narrow band gap (Eu5Zn2As5O) or pseudo-gap (Eu5Cd2As5O). In order to achieve such a formal charge balance, and hence, narrow-gap semiconducting behavior in Eu5M2As5O (M = Zn, Cd), europium is theorized to be in a mixed-valent Eu2+/ Eu3+ state.

Metallic alloys at the edge of complexity: structural aspects, chemical bonding and physical properties

Complex metallic alloys belong to the vast family of intermetallic compounds and are hallmarked by extremely large unit cells and, in many cases, extensive crystallographic disorder. Early studies of complex intermetallics were focusing on the elucidation of their crystal structures and classification of the underlying building principles. More recently, ab initio computational analysis and detailed examination of the physical properties have become feasible and opened new perspectives for these materials. The present review paper provides a summary of the literature data on the reported compositions with exceptional structural complexity and their properties, and highlights the factors leading to the emergence of their crystal structures and the methods of characterization and systematization of these compounds.

Electronic stabilization by occupational disorder in the ternary bismuthide Li3-x-yInxBi (x ≃ 0.14, y ≃ 0.29)

A ternary derivative of Li₃Bi with the composition Li_3-x-yIn_xBi (x ≃ 0.14, y ≃ 0.29) was produced by a mixed In+Bi flux approach. The crystal structure adopts the space group Fd-3m (No. 227), with a = 13.337 (4) Å, and can be viewed as a 2 × 2 × 2 superstructure of the parent Li₃Bi phase, resulting from a partial ordering of Li and In in the tetrahedral voids of the Bi fcc packing. In addition to the Li/In substitutional disorder, partial occupation of some Li sites is observed. The Li deficiency develops to reduce the total electron count in the system, counteracting thereby the electron doping introduced by the In substitution. First-principles calculations confirm the electronic rationale of the observed disorder.

Exploration of Multi-Component Vanadium and Titanium Pnictides Using Flux Growth and Conventional High-Temperature Methods

The flux growth method was successfully employed to synthesize millimeter-sized single crystals of the ternary barium vanadium pnictides Ba₅V₁₂As_19+x (x ≈ 0.02) and Ba₅V₁₂Sb_19+x (x ≈ 0.36), using molten Pb and Sb, respectively. Both compositions crystallize in space group P 4 ¯ 3m and adopt a structure similar to those of the barium titanium pnictides Ba₅Ti₁₂ Pn _19+x (Pn = Sb, Bi), yet with a subtly different disorder, involving the pnictogen and barium atoms. Attempts to obtain an arsenide analog of Ba₅Ti₁₂ Pn _19+x using a Pb flux technique yielded binary arsenides. High-temperature treatment of the elements Ba, Ti, and As in Nb or Ta tubes resulted in side reactions with the crucible materials and produced two isostructural compositions Ba₈Ti_13-x M _x As₂₁ (M = Nb, Ta; x ≈ 4), representing a new structure type. The latter structure displays fcc-type metal clusters comprised of statistically distributed Ti and M atoms (M = Nb, Ta) with multi-center and two-center bonding within the clusters, as suggested by our first-principle calculations.

Multifaceted Sn-Sn bonding in the solid state. Synthesis and structural characterization of four new Ca-Li-Sn compounds

Four novel ternary phases have been prepared in the system Ca-Li-Sn using both the metal flux method and conventional high-temperature synthesis. Each of the obtained compositions represents its own (new) structure type, and the structures feature distinct polyanionic Sn units. Ca₄LiSn₆ (space group Pbcm, Pearson symbol oP44) accommodates infinite chains, made up of cyclopentane-like [Sn₅]-rings, which are bridged by Sn atoms. The Sn atoms in this structure are two- and three-bonded. The anionic substructure of Ca₉Li_6+xSn_13-x (x≈ 0.28, space group C2/m, Pearson symbol mS56) displays extensive mixing of Li and Sn and combination of single-bonded and hypervalent interactions between the Sn atoms. Hypervalent bonding is also pronounced in the structure of the third compound, Ca₂LiSn₃ (space group Pmm2, Pearson symbol oP18) with quasi-two-dimensional polyanionic subunits and a variety of coordination environments of the Sn atoms. One-dimensional [Sn₁₀]-chains with an intricate topology of cis- and trans-Sn-Sn bonds exist in the structure of Ca_9-xLi₂Sn₁₀ (x≈ 0.16, space group C2/m, Pearson symbol mS42), and the Sn-Sn bonding in this case demonstrates the characteristics of an intermediate between single- and double- bond-order. The peculiarities of the bonding are discussed in the context of the Zintl approach, which captures the essence of the main chemical interactions. The electronic structures of all four compounds have also been analyzed in full detail using first-principles calculations.

Limits of Cation Solubility in AMg₂Sb₂ (A = Mg, Ca, Sr, Ba) Alloys

AM2X2 compounds that crystallize in the CaAl2Si2 structure type have emerged as a promising class of n- and p-type thermoelectric materials. Alloying on the cation (A) site is a frequently used approach to optimize the thermoelectric transport properties of AM2X2 compounds, and complete solid solubility has been reported for many combinations of cations. In the present study, we investigate the phase stability of the AMg2Sb2 system with mixed occupancy of Mg, Ca, Sr, or Ba on the cation (A) site. We show that the small ionic radius of Mg2+ leads to limited solubility when alloyed with larger cations such as Sr or Ba. Phase separation observed in such cases indicates a eutectic-like phase diagram. By combining these results with prior alloying studies, we establish an upper limit for cation radius mismatch in AM2X2 alloys to provide general guidance for future alloying and doping studies.

Data from the electronic band structures of several Zintl phases with group 15 elements and the transition metals

Electronic band structures of the following compounds – Cs₄Cd(As₇)₂, K₂PdP₂, K₅CuAs₂, Na₂CuP and K₃Cu₃P₂ – all computed by means of the TB-LMTO-ASA code. The calculations show that for all compounds, the bonding states are occupied, while the antibonding orbitals are vacant. This confirms the partitioning of the valence electrons according to the Zintl–Klemm formalism. The data is related todoi.org/10.1016/j.jssc.2018.11.029 (Ovchinnikov and Bobev, 2019) [1].