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Ma Q, Cao S, Wang H, Tang Y, Liu L, Xue E, Le Z, Feng X, Wang C, Sun L, Marks TJ, Wang B. Autonomous and Ultrasensitive Low-Power Metal Oxide Nanofiber Gas Sensor for Source Tracking and Localization. ACS Sens 2025; 10:2938-2947. [PMID: 40232742 DOI: 10.1021/acssensors.4c03676] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/16/2025]
Abstract
Current toxic gas detection methods in industrial and environmental settings are limited by their reliance on manual monitoring and stationary sensors. Here, we present an autonomous mobile gas sensing system offering real-time monitoring and precise gas source localization without the need for human intervention. Room-temperature gas sensors based on high specific surface area indium gallium zinc oxide nanofibers (IGZO NFs) are developed, which exhibit low power consumption (∼0.5 mW), exceptional sensitivity (∼1290% ppb-1), and a low detection limit of 20 ppb for toxic NO2. When integrated into an autonomous mobile platform and supported by adaptive biologically inspired algorithms, the system exhibits a source localization efficiency of ∼1.5 m min-1, offering a remote, scalable, and efficient solution for detecting and localizing toxic gas leaks.
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Affiliation(s)
- Qing Ma
- School of Electronic Science and Engineering, Southeast University, No. 2 Southeast University Road, Jiangning, Nanjing, Jiangsu 211189, China
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Shihang Cao
- School of Electronic Science and Engineering, Southeast University, No. 2 Southeast University Road, Jiangning, Nanjing, Jiangsu 211189, China
| | - Haoyang Wang
- School of Electronic Science and Engineering, Southeast University, No. 2 Southeast University Road, Jiangning, Nanjing, Jiangsu 211189, China
| | - Yao Tang
- School of Electronic Science and Engineering, Southeast University, No. 2 Southeast University Road, Jiangning, Nanjing, Jiangsu 211189, China
| | - Limei Liu
- College of Mechanical Engineering, Yangzhou University, Yangzhou, Jiangsu 225127, China
| | - Enbo Xue
- School of Electronic Science and Engineering, Southeast University, No. 2 Southeast University Road, Jiangning, Nanjing, Jiangsu 211189, China
| | - Ziyun Le
- School of Electronic Science and Engineering, Southeast University, No. 2 Southeast University Road, Jiangning, Nanjing, Jiangsu 211189, China
| | - Xuyang Feng
- School of Electronic Science and Engineering, Southeast University, No. 2 Southeast University Road, Jiangning, Nanjing, Jiangsu 211189, China
| | - Chenhua Wang
- School of Electronic Science and Engineering, Southeast University, No. 2 Southeast University Road, Jiangning, Nanjing, Jiangsu 211189, China
| | - Litao Sun
- School of Integrated Circuits, Southeast University, No. 2 Southeast University Road, Jiangning, Nanjing, Jiangsu 211189, China
| | - Tobin J Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Binghao Wang
- School of Electronic Science and Engineering, Southeast University, No. 2 Southeast University Road, Jiangning, Nanjing, Jiangsu 211189, China
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Han Y, Seo J, Lee DH, Yoo H. IGZO-Based Electronic Device Application: Advancements in Gas Sensor, Logic Circuit, Biosensor, Neuromorphic Device, and Photodetector Technologies. MICROMACHINES 2025; 16:118. [PMID: 40047564 PMCID: PMC11857157 DOI: 10.3390/mi16020118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/24/2024] [Revised: 01/14/2025] [Accepted: 01/19/2025] [Indexed: 03/09/2025]
Abstract
Metal oxide semiconductors, such as indium gallium zinc oxide (IGZO), have attracted significant attention from researchers in the fields of liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs) for decades. This interest is driven by their high electron mobility of over ~10 cm2/V·s and excellent transmittance of more than ~80%. Amorphous IGZO (a-IGZO) offers additional advantages, including compatibility with various processes and flexibility making it suitable for applications in flexible and wearable devices. Furthermore, IGZO-based thin-film transistors (TFTs) exhibit high uniformity and high-speed switching behavior, resulting in low power consumption due to their low leakage current. These advantages position IGZO not only as a key material in display technologies but also as a candidate for various next-generation electronic devices. This review paper provides a comprehensive overview of IGZO-based electronics, including applications in gas sensors, biosensors, and photosensors. Additionally, it emphasizes the potential of IGZO for implementing logic gates. Finally, the paper discusses IGZO-based neuromorphic devices and their promise in overcoming the limitations of the conventional von Neumann computing architecture.
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Affiliation(s)
- Youngmin Han
- Department of Semiconductor Engineering, Gachon University, Seongnam 13120, Republic of Korea;
| | - Juhyung Seo
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Dong Hyun Lee
- Department of Semiconductor Engineering, Gachon University, Seongnam 13120, Republic of Korea;
| | - Hocheon Yoo
- Department of Semiconductor Engineering, Gachon University, Seongnam 13120, Republic of Korea;
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
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Feng Z, Giubertoni D, Cian A, Valt M, Ardit M, Pedrielli A, Vanzetti L, Fabbri B, Guidi V, Gaiardo A. Fabrication of a Highly NO 2-Sensitive Gas Sensor Based on a Defective ZnO Nanofilm and Using Electron Beam Lithography. MICROMACHINES 2023; 14:1908. [PMID: 37893345 PMCID: PMC10609393 DOI: 10.3390/mi14101908] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 09/30/2023] [Accepted: 10/03/2023] [Indexed: 10/29/2023]
Abstract
Hazardous substances produced by anthropic activities threaten human health and the green environment. Gas sensors, especially those based on metal oxides, are widely used to monitor toxic gases with low cost and efficient performance. In this study, electron beam lithography with two-step exposure was used to minimize the geometries of the gas sensor hotplate to a submicron size in order to reduce the power consumption, reaching 100 °C with 0.09 W. The sensing capabilities of the ZnO nanofilm against NO2 were optimized by introducing an enrichment of oxygen vacancies through N2 calcination at 650 °C. The presence of oxygen vacancies was proven using EDX and XPS. It was found that oxygen vacancies did not significantly change the crystallographic structure of ZnO, but they significantly improved the electrical conductivity and sensing behaviors of ZnO film toward 5 ppm of dry air.
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Affiliation(s)
- Zhifu Feng
- Istituto Italiano di Tecnologia, Via Morego, 30, 16163 Genova, Italy
| | - Damiano Giubertoni
- Micro-Nano Characterization and Fabrication Facility Unit, Sensors and Devices Center, Bruno Kessler Foundation, Via Sommarive 18, 38123 Trento, Italy; (D.G.); (A.C.); (M.V.); (A.P.); (L.V.)
| | - Alessandro Cian
- Micro-Nano Characterization and Fabrication Facility Unit, Sensors and Devices Center, Bruno Kessler Foundation, Via Sommarive 18, 38123 Trento, Italy; (D.G.); (A.C.); (M.V.); (A.P.); (L.V.)
| | - Matteo Valt
- Micro-Nano Characterization and Fabrication Facility Unit, Sensors and Devices Center, Bruno Kessler Foundation, Via Sommarive 18, 38123 Trento, Italy; (D.G.); (A.C.); (M.V.); (A.P.); (L.V.)
| | - Matteo Ardit
- Department of Physics and Earth Science, University of Ferrara, Via Saragat 1, 44122 Ferrara, Italy; (M.A.); (B.F.); (V.G.)
| | - Andrea Pedrielli
- Micro-Nano Characterization and Fabrication Facility Unit, Sensors and Devices Center, Bruno Kessler Foundation, Via Sommarive 18, 38123 Trento, Italy; (D.G.); (A.C.); (M.V.); (A.P.); (L.V.)
| | - Lia Vanzetti
- Micro-Nano Characterization and Fabrication Facility Unit, Sensors and Devices Center, Bruno Kessler Foundation, Via Sommarive 18, 38123 Trento, Italy; (D.G.); (A.C.); (M.V.); (A.P.); (L.V.)
| | - Barbara Fabbri
- Department of Physics and Earth Science, University of Ferrara, Via Saragat 1, 44122 Ferrara, Italy; (M.A.); (B.F.); (V.G.)
| | - Vincenzo Guidi
- Department of Physics and Earth Science, University of Ferrara, Via Saragat 1, 44122 Ferrara, Italy; (M.A.); (B.F.); (V.G.)
| | - Andrea Gaiardo
- Micro-Nano Characterization and Fabrication Facility Unit, Sensors and Devices Center, Bruno Kessler Foundation, Via Sommarive 18, 38123 Trento, Italy; (D.G.); (A.C.); (M.V.); (A.P.); (L.V.)
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Shin W, Yim J, Bae JH, Lee JK, Hong S, Kim J, Jeong Y, Kwon D, Koo RH, Jung G, Han C, Kim J, Park BG, Kwon D, Lee JH. Synergistic improvement of sensing performance in ferroelectric transistor gas sensors using remnant polarization. MATERIALS HORIZONS 2022; 9:1623-1630. [PMID: 35485256 DOI: 10.1039/d2mh00340f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Gaseous pollutants, including nitrogen oxides, pose a severe threat to ecosystems and human health; therefore, developing reliable gas-sensing systems to detect them is becoming increasingly important. Among the various options, metal-oxide-based gas sensors have attracted attention due to their capability for real-time monitoring and large response. In particular, in the field of materials science, there has been extensive research into controlling the morphological properties of metal oxides. However, these approaches have limitations in terms of controlling the response, sensitivity, and selectivity after the sensing material is deposited. In this study, we propose a novel method to improve the gas-sensing performance by utilizing the remnant polarization of ferroelectric thin-film transistor (FeTFT) gas sensors. The proposed FeTFT gas sensor has IGZO and HZO as the conducting channel and ferroelectric layer, respectively. It is demonstrated that the response and sensitivity of FeTFT gas sensors can be modulated by engineering the polarization of the ferroelectric layer. The amount of reaction sites in IGZO, including electrons and oxygen vacancy-induced negatively charged oxygen, is changed depending on upward and downward polarization. The results of this study provide an essential foundation for further development of gas sensors with tunable sensing properties.
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Affiliation(s)
- Wonjun Shin
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Jiyong Yim
- Department of Electrical Engineering, Inha University, Incheon, Korea.
| | - Jong-Ho Bae
- School of Electrical Engineering, Kookmin University, Seoul 02707, Korea
| | - Jung-Kyu Lee
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Seongbin Hong
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Jaehyeon Kim
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Yujeong Jeong
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Dongseok Kwon
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Ryun-Han Koo
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Gyuweon Jung
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Changhyeon Han
- Department of Electrical Engineering, Inha University, Incheon, Korea.
| | - Jeonghan Kim
- Department of Electrical Engineering, Inha University, Incheon, Korea.
| | - Byung-Gook Park
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Daewoong Kwon
- Department of Electrical Engineering, Inha University, Incheon, Korea.
| | - Jong-Ho Lee
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
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