1
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Galán-González A, Pander P, MacKenzie RCI, Bowen L, Zeze DA, Borthwick RJ, Thompson RL, Dias FB, Chaudhry MU. Nanostructured Channel for Improving Emission Efficiency of Hybrid Light-Emitting Field-Effect Transistors. ACS PHOTONICS 2023; 10:4315-4321. [PMID: 38145168 PMCID: PMC10739997 DOI: 10.1021/acsphotonics.3c01080] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Revised: 11/20/2023] [Accepted: 11/22/2023] [Indexed: 12/26/2023]
Abstract
We report on the mechanism of enhancing the luminance and external quantum efficiency (EQE) by developing nanostructured channels in hybrid (organic/inorganic) light-emitting transistors (HLETs) that combine a solution-processed oxide and a polymer heterostructure. The heterostructure comprised two parts: (i) the zinc tin oxide/zinc oxide (ZTO/ZnO), with and without ZnO nanowires (NWs) grown on the top of the ZTO/ZnO stack, as the charge transport layer and (ii) a polymer Super Yellow (SY, also known as PDY-132) layer as the light-emitting layer. Device characterization shows that using NWs significantly improves luminance and EQE (≈1.1% @ 5000 cd m-2) compared to previously reported similar HLET devices that show EQE < 1%. The size and shape of the NWs were controlled through solution concentration and growth time, which also render NWs to have higher crystallinity. Notably, the size of the NWs was found to provide higher escape efficiency for emitted photons while offering lower contact resistance for charge injection, which resulted in the improved optical performance of HLETs. These results represent a significant step forward in enabling efficient and all-solution-processed HLET technology for lighting and display applications.
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Affiliation(s)
- Alejandro Galán-González
- Department
of Engineering, Durham University, Durham DH1 3LE, United Kingdom
- Instituto
de Carboquímica (ICB-CSIC), C/ Miguel Luesma Castán 4, 50018 Zaragoza, Spain
| | - Piotr Pander
- Faculty
of Chemistry, Silesian University of Technology, Strzody 9, 44-100 Gliwice, Poland
- Centre
for Organic and Nanohybrid Electronics, Silesian University of Technology, Konarskiego 22B, 44-100 Gliwice, Poland
| | | | - Leon Bowen
- Department
of Physics, Durham University, Durham DH1 3LE, United Kingdom
| | - Dagou A. Zeze
- Department
of Engineering, Durham University, Durham DH1 3LE, United Kingdom
| | - Robert J. Borthwick
- Department
of Engineering, Durham University, Durham DH1 3LE, United Kingdom
| | | | - Fernando B. Dias
- Department
of Physics, Durham University, Durham DH1 3LE, United Kingdom
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2
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Coppola ME, Petritz A, Irimia CV, Yumusak C, Mayr F, Bednorz M, Matkovic A, Aslam MA, Saller K, Schwarzinger C, Ionita MD, Schiek M, Smeds AI, Salinas Y, Brüggemann O, D'Orsi R, Mattonai M, Ribechini E, Operamolla A, Teichert C, Xu C, Stadlober B, Sariciftci NS, Irimia‐Vladu M. Pinaceae Pine Resins (Black Pine, Shore Pine, Rosin, and Baltic Amber) as Natural Dielectrics for Low Operating Voltage, Hysteresis-Free, Organic Field Effect Transistors. GLOBAL CHALLENGES (HOBOKEN, NJ) 2023; 7:2300062. [PMID: 37745829 PMCID: PMC10517313 DOI: 10.1002/gch2.202300062] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Revised: 06/24/2023] [Indexed: 09/26/2023]
Abstract
Four pinaceae pine resins analyzed in this study: black pine, shore pine, Baltic amber, and rosin demonstrate excellent dielectric properties, outstanding film forming, and ease of processability from ethyl alcohol solutions. Their trap-free nature allows fabrication of virtually hysteresis-free organic field effect transistors operating in a low voltage window with excellent stability under bias stress. Such green constituents represent an excellent choice of materials for applications targeting biocompatibility and biodegradability of electronics and sensors, within the overall effort of sustainable electronics development and environmental friendliness.
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Affiliation(s)
| | - Andreas Petritz
- Joanneum Research ForschungsgesellschaftMaterialsFranz‐Pichler Str. Nr. 30Weiz8169Austria
| | - Cristian Vlad Irimia
- Joanneum Research ForschungsgesellschaftMaterialsFranz‐Pichler Str. Nr. 30Weiz8169Austria
- Johannes Kepler University LinzDept. Physical ChemistryLinz Institute for Organic Solar Cells (LIOS)Altenberger Str. Nr. 69Linz4040Austria
| | - Cigdem Yumusak
- Johannes Kepler University LinzDept. Physical ChemistryLinz Institute for Organic Solar Cells (LIOS)Altenberger Str. Nr. 69Linz4040Austria
| | - Felix Mayr
- Johannes Kepler University LinzDept. Physical ChemistryLinz Institute for Organic Solar Cells (LIOS)Altenberger Str. Nr. 69Linz4040Austria
| | - Mateusz Bednorz
- Johannes Kepler University LinzDept. Physical ChemistryLinz Institute for Organic Solar Cells (LIOS)Altenberger Str. Nr. 69Linz4040Austria
| | - Aleksandar Matkovic
- Chair of PhysicsDepartment of PhysicsMechanics and Electrical EngineeringMontanuniversität LeobenFranz Josef Str. 18Leoben8700Austria
| | - Muhammad Awais Aslam
- Chair of PhysicsDepartment of PhysicsMechanics and Electrical EngineeringMontanuniversität LeobenFranz Josef Str. 18Leoben8700Austria
| | - Klara Saller
- Institut for Chemical Technologies of Organic MaterialsJohannes Kepler University LinzAltenberger Str. Nr. 69Linz4040Austria
| | - Clemens Schwarzinger
- Institut for Chemical Technologies of Organic MaterialsJohannes Kepler University LinzAltenberger Str. Nr. 69Linz4040Austria
| | - Maria Daniela Ionita
- National Institute for LaserPlasma and Radiation PhysicsPO Box Mg‐36, MagureleBucharest077125Romania
| | - Manuela Schiek
- Johannes Kepler University LinzDept. Physical ChemistryLinz Institute for Organic Solar Cells (LIOS)Altenberger Str. Nr. 69Linz4040Austria
- Johannes Kepler University LinzCenter for Surface and Nanoanalytics (ZONA) Altenberger Str. 69Linz4040Austria
| | - Annika I. Smeds
- Laboratory of Natural Materials Technology/Wood and Paper ChemistryÅbo Akademi UniversityPorthansgatan 3‐5, ÅboTurku20500Finland
| | - Yolanda Salinas
- Institute of Polymer ChemistryJohannes Kepler University LinzAltenberger Str. 69Linz4040Austria
| | - Oliver Brüggemann
- Institute of Polymer ChemistryJohannes Kepler University LinzAltenberger Str. 69Linz4040Austria
| | - Rosarita D'Orsi
- Department of Chemistry and Industrial ChemistryUniversity of Pisavia Moruzzi 13Pisa56124Italy
| | - Marco Mattonai
- Department of Chemistry and Industrial ChemistryUniversity of Pisavia Moruzzi 13Pisa56124Italy
| | - Erika Ribechini
- Department of Chemistry and Industrial ChemistryUniversity of Pisavia Moruzzi 13Pisa56124Italy
| | - Alessandra Operamolla
- Department of Chemistry and Industrial ChemistryUniversity of Pisavia Moruzzi 13Pisa56124Italy
| | - Christian Teichert
- Chair of PhysicsDepartment of PhysicsMechanics and Electrical EngineeringMontanuniversität LeobenFranz Josef Str. 18Leoben8700Austria
| | - Chunlin Xu
- Laboratory of Natural Materials Technology/Wood and Paper ChemistryÅbo Akademi UniversityPorthansgatan 3‐5, ÅboTurku20500Finland
| | - Barbara Stadlober
- Joanneum Research ForschungsgesellschaftMaterialsFranz‐Pichler Str. Nr. 30Weiz8169Austria
| | - Niyazi Serdar Sariciftci
- Johannes Kepler University LinzDept. Physical ChemistryLinz Institute for Organic Solar Cells (LIOS)Altenberger Str. Nr. 69Linz4040Austria
| | - Mihai Irimia‐Vladu
- Joanneum Research ForschungsgesellschaftMaterialsFranz‐Pichler Str. Nr. 30Weiz8169Austria
- Johannes Kepler University LinzDept. Physical ChemistryLinz Institute for Organic Solar Cells (LIOS)Altenberger Str. Nr. 69Linz4040Austria
- Present address:
Mihai Irimia‐VladuJohannes Kepler University LinzInstitute of Physical ChemistryLinz Institute for Organic Solar Cells (LIOS)Altenberger Str. Nr. 69Linz40040Austria
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3
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Dollinger F, Lim KG, Li Y, Guo E, Formánek P, Hübner R, Fischer A, Kleemann H, Leo K. Vertical Organic Thin-Film Transistors with an Anodized Permeable Base for Very Low Leakage Current. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1900917. [PMID: 30920705 DOI: 10.1002/adma.201900917] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2019] [Revised: 03/09/2019] [Indexed: 06/09/2023]
Abstract
The organic permeable base transistor (OPBT) is currently the fastest organic transistor with a transition frequency of 40 MHz. It relies on a thin aluminum base electrode to control the transistor current. This electrode is surrounded by a native oxide layer for passivation, currently created by oxidation in air. However, this process is not reliable and leads to large performance variations between samples, slow production, and relatively high leakage currents. Here, for the first time it is demonstrated that electrochemical anodization can be conveniently employed for the fabrication of high-performance OPBTs with vastly reduced leakage currents and more controlled process parameters. Very large transmission factors of 99.9996% are achieved, while excellent on/off ratios of 5 × 105 and high on-currents greater than 300 mA cm-2 show that the C60 semiconductor layer can withstand the electrochemical anodization. These results make anodization an intriguing option for innovative organic transistor design.
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Affiliation(s)
- Felix Dollinger
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Kyung-Geun Lim
- Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Yuseong-gu, Daejeon, 34113, Republic of Korea
| | - Yang Li
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Erjuan Guo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Peter Formánek
- Leibniz-Institut für Polymerforschung Dresden e. V. (IPF), 01069, Dresden, Germany
| | - René Hübner
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Axel Fischer
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Hans Kleemann
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
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4
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Mokni M, Maggioni G, Kahouli A, Carturan SM, Raniero W, Sylvestre A. Nanocomposite-parylene C thin films with high dielectric constant and low losses for future organic electronic devices. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2019; 10:428-441. [PMID: 30873313 PMCID: PMC6404397 DOI: 10.3762/bjnano.10.42] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/12/2018] [Accepted: 01/07/2019] [Indexed: 06/09/2023]
Abstract
Nanocomposite-parylene C (NCPC) thin films were deposited with a new technique based on the combination of chemical vapor deposition (CVD) for parylene C deposition and RF-magnetron sputtering for silver deposition. This method yields good dispersion of Ag-containing nanoparticles inside the parylene C polymer matrix. Film composition and structure were studied by using several techniques. It was found that the plasma generated by the RF-magnetron reactor modifies the film density as well as the degree of crystallinity and the size of parylene C crystallites. Moreover, silver is incorporated in the parylene matrix as an oxide phase. The average size of the Ag oxide nanoparticles is lower than 20 nm and influences the roughness of the NCPC films. Samples with various contents and sizes of silver-oxide nanoparticles were investigated by broadband dielectric spectroscopy (BDS) in view of their final application. It was found that both the content and the size of the nanoparticles influence the value of the dielectric constant and the frequency-dependence of the permittivity. In particular, β-relaxation is affected by the addition of nanoparticles as well as the dissipation factor, which is even improved. A dielectric constant of 5 ± 1 with a dissipation factor of less than 0.045 in the range from 0.1 Hz to 1 MHz is obtained for a 2.7 µm thick NCPC with 3.8% Ag content. This study provides guidance for future NCPC materials for insulating gates in organic field-effect transistors (OFETs) and advanced electronic applications.
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Affiliation(s)
- Marwa Mokni
- Univ. Grenoble Alpes, CNRS, Grenoble INP, G2Elab, 38000 Grenoble, France
| | - Gianluigi Maggioni
- Dipartimento di Fisica e Astronomia “G. Galilei”, Università di Padova, Via Marzolo 8, 35121 Padova (PD), Italy
- Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, Viale dell’Università 2, 35020 Legnaro (PD), Italy
| | - Abdelkader Kahouli
- Univ. Grenoble Alpes, CNRS, Grenoble INP, G2Elab, 38000 Grenoble, France
| | - Sara M Carturan
- Dipartimento di Fisica e Astronomia “G. Galilei”, Università di Padova, Via Marzolo 8, 35121 Padova (PD), Italy
- Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, Viale dell’Università 2, 35020 Legnaro (PD), Italy
| | - Walter Raniero
- Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, Viale dell’Università 2, 35020 Legnaro (PD), Italy
| | - Alain Sylvestre
- Univ. Grenoble Alpes, CNRS, Grenoble INP, G2Elab, 38000 Grenoble, France
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5
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Lacerda GRDBS, Calado CR, Calado HDR. Electrochromic and electrochemical properties of copolymer films based on EDOT and phenylthiophene derivatives. J Solid State Electrochem 2019. [DOI: 10.1007/s10008-018-04185-2] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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6
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Lee S, Seong H, Im SG, Moon H, Yoo S. Organic flash memory on various flexible substrates for foldable and disposable electronics. Nat Commun 2017; 8:725. [PMID: 28959055 PMCID: PMC5620045 DOI: 10.1038/s41467-017-00805-z] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/28/2016] [Accepted: 07/31/2017] [Indexed: 12/21/2022] Open
Abstract
With the emergence of wearable or disposable electronics, there grows a demand for a flash memory realizable on various flexible substrates. Nevertheless, it has been challenging to develop a flash memory that simultaneously exhibits a significant level of flexibility and performance. This is mainly due to the scarcity of flexible dielectric materials with insulating properties sufficient for a flash memory, which involves dual dielectric layers, respectively, responsible for tunneling and blocking of charges. Here we report ultra-flexible organic flash memories based on polymer dielectrics prepared by initiated chemical vapor deposition. Using their near-ideal dielectric characteristics, we demonstrate flash memories bendable down to a radius of 300 μm that exhibits a relatively long-projected retention with a programming voltage on par with the present industrial standards. The proposed memory technology is then applied to non-conventional substrates, such as papers, to demonstrate its feasibility in a wide range of applications. Flexible flash memory is crucial to modern electronics, but its fabrication is challenging in the absence of suitable dielectric materials. Here, Lee et al. realize organic memory with retention over 10 years using tunneling and blocking dielectric layers prepared by initiated chemical vapor deposition.
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Affiliation(s)
- Seungwon Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Hyejeong Seong
- Department of Chemical & Biomolecular Engineering, KAIST, Daejeon, 34141, Republic of Korea
| | - Sung Gap Im
- Department of Chemical & Biomolecular Engineering, KAIST, Daejeon, 34141, Republic of Korea
| | - Hanul Moon
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
| | - Seunghyup Yoo
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
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7
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Organic Power Electronics: Transistor Operation in the kA/cm 2 Regime. Sci Rep 2017; 7:44713. [PMID: 28303924 PMCID: PMC5356189 DOI: 10.1038/srep44713] [Citation(s) in RCA: 32] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/02/2016] [Accepted: 02/13/2017] [Indexed: 11/18/2022] Open
Abstract
In spite of interesting features as flexibility, organic thin-film transistors have commercially lagged behind due to the low mobilities of organic semiconductors associated with hopping transport. Furthermore, organic transistors usually have much larger channel lengths than their inorganic counterparts since high-resolution structuring is not available in low-cost production schemes. Here, we present an organic permeable-base transistor (OPBT) which, despite extremely simple processing without any high-resolution structuring, achieve a performance beyond what has so far been possible using organic semiconductors. With current densities above 1 kA cm−2 and switching speeds towards 100 MHz, they open the field of organic power electronics. Finding the physical limits and an effective mobility of only 0.06 cm2 V−1 s−1, this OPBT device architecture has much more potential if new materials optimized for its geometry will be developed.
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8
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Senthilkumar K, Thirumoorthy K, Vinitha G, Soni K, Bhuvanesh NS, Palanisami N. Synthesis and characterization of d10 metal complexes of 3-Me-5-FcPz: Structural, theoretical and third order nonlinear optical properties. J Mol Struct 2017. [DOI: 10.1016/j.molstruc.2016.08.036] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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9
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Song L, Hu Y, Zhang N, Li Y, Lin J, Liu X. Improved Performance of Organic Light-Emitting Field-Effect Transistors by Interfacial Modification of Hole-Transport Layer/Emission Layer: Incorporating Organic Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2016; 8:14063-14070. [PMID: 27215694 DOI: 10.1021/acsami.6b02618] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Organic heterojunctions (OHJs) consisting of a strong electron acceptor 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) and an electron donor N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB) were demonstrated for the first time that they can be implemented as effective modification layers between hole transport layer (HTL) and emission layer in the heterostructured organic light-emitting field effect transistors (OLEFETs). The influence of both HAT-CN/NPB junction (npJ) and NPB/HAT-CN junction (pnJ) on the optoelectronic performance of OLEFETs were conscientiously investigated. It is found that both the transport ability of holes and the injection ability of holes into emissive layer can be dramatically improved via the charge transfer of the OHJs and that between HAT-CN and the HTL. Consequently, OLEFETs with pnJ present optimal performance of an external quantum efficiency (EQE) of 3.3% at brightness of 2630 cdm(-2) and the ones with npJs show an EQE of 4.7% at brightness of 4620 cdm(-2). By further utilizing npn OHJs of HAT-CN/NPB/HAT-CN, superior optoelectronic performance with an EQE of 4.7% at brightness of 8350 cdm(-2) and on/off ratio of 1 × 10(5) is obtained. The results demonstrate the great practicality of implementing OHJs as effective modification layers in heterostructured OLEFETs.
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Affiliation(s)
- Li Song
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, China
- University of Chinese Academy of Sciences , Beijing 100049, China
| | - Yongsheng Hu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, China
| | - Nan Zhang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, China
| | - Yantao Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, China
| | - Jie Lin
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, China
| | - Xingyuan Liu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, China
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10
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Ahmed R, Simbrunner C, Baig MA, Sitter H. Grain Size and Interface Dependence of Bias Stress Stability of n-Type Organic Field Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2015; 7:22380-22384. [PMID: 26381018 DOI: 10.1021/acsami.5b06210] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The effect of grain size and interface dependence of bias stress stability of C60-based n-type organic field effect transistors (OFETs) has been studied. It has been realized that, with increasing grain size of C60, the bias stress induced threshold voltage shift can be controlled and this effect is mainly attributed to the mechanism of charge trapping at grain boundaries. It is further studied that the growth of C60 on the surface of parylene at elevated substrate temperature leads to the creation of radicals at the interface between the active layer and the gate dielectric. These radicals help to improve the bias stress stability of C60-based n-type OFETs. For achieving the bias stress stability, we have presented a procedure of creation of radicals at the interface between C60 and parylene in single gate OFETs instead of dual gate OFETs.
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Affiliation(s)
- Rizwan Ahmed
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University , A-4040 Linz, Austria
- National Centre for Physics , Quaid-e-Azam University Campus, 440000 Islamabad, Pakistan
| | - Clemens Simbrunner
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University , A-4040 Linz, Austria
- Institute of Solid State Physics, University of Bremen , D-28359 Bremen, Germany
| | - M A Baig
- National Centre for Physics , Quaid-e-Azam University Campus, 440000 Islamabad, Pakistan
| | - H Sitter
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University , A-4040 Linz, Austria
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11
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Ullah M, Armin A, Tandy K, Yambem SD, Burn PL, Meredith P, Namdas EB. Defining the light emitting area for displays in the unipolar regime of highly efficient light emitting transistors. Sci Rep 2015; 5:8818. [PMID: 25743444 PMCID: PMC4351517 DOI: 10.1038/srep08818] [Citation(s) in RCA: 33] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/02/2014] [Accepted: 01/26/2015] [Indexed: 11/25/2022] Open
Abstract
Light-emitting field effect transistors (LEFETs) are an emerging class of multifunctional optoelectronic devices. It combines the light emitting function of an OLED with the switching function of a transistor in a single device architecture. The dual functionality of LEFETs has the potential applications in active matrix displays. However, the key problem of existing LEFETs thus far has been their low EQEs at high brightness, poor ON/OFF and poorly defined light emitting area - a thin emissive zone at the edge of the electrodes. Here we report heterostructure LEFETs based on solution processed unipolar charge transport and an emissive polymer that have an EQE of up to 1% at a brightness of 1350 cd/m2, ON/OFF ratio > 104 and a well-defined light emitting zone suitable for display pixel design. We show that a non-planar hole-injecting electrode combined with a semi-transparent electron-injecting electrode enables to achieve high EQE at high brightness and high ON/OFF ratio. Furthermore, we demonstrate that heterostructure LEFETs have a better frequency response (fcut-off = 2.6 kHz) compared to single layer LEFETs. The results presented here therefore are a major step along the pathway towards the realization of LEFETs for display applications.
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Affiliation(s)
- Mujeeb Ullah
- Centre for Organic Photonics &Electronics, The University of Queensland, Australia
| | - Ardalan Armin
- Centre for Organic Photonics &Electronics, The University of Queensland, Australia
| | - Kristen Tandy
- Centre for Organic Photonics &Electronics, The University of Queensland, Australia
| | - Soniya D Yambem
- Centre for Organic Photonics &Electronics, The University of Queensland, Australia
| | - Paul L Burn
- Centre for Organic Photonics &Electronics, The University of Queensland, Australia
| | - Paul Meredith
- Centre for Organic Photonics &Electronics, The University of Queensland, Australia
| | - Ebinazar B Namdas
- Centre for Organic Photonics &Electronics, The University of Queensland, Australia
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12
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Subbarao NVV, Gedda M, Iyer PK, Goswami DK. Enhanced environmental stability induced by effective polarization of a polar dielectric layer in a trilayer dielectric system of organic field-effect transistors: a quantitative study. ACS APPLIED MATERIALS & INTERFACES 2015; 7:1915-1924. [PMID: 25552195 DOI: 10.1021/am507636k] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We report a concept fabrication method that helps to improve the performance and stability of copper phthalocyanine (CuPc) based organic field-effect transistors (OFETs) in ambient. The devices were fabricated using a trilayer dielectric system that contains a bilayer polymer dielectrics consisting of a hydrophobic thin layer of poly(methyl methacrylate) (PMMA) on poly(vinyl alcohol) (PVA) or poly(4-vinylphenol) (PVP) or polystyrene (PS) with Al2O3 as a third layer. We have explored the peculiarities in the device performance (i.e., superior performance under ambient humidity), which are caused due to the polarization of dipoles residing in the polar dielectric material. The anomalous behavior of the bias-stress measured under vacuum has been explained successfully by a stretched exponential function modified by adding a time dependent dipole polarization term. The OFET with a dielectric layer of PVA or PVP containing hydroxyl groups has shown enhanced characteristics and remains highly stable without any degradation even after 300 days in ambient with three times enhancement in carrier mobility (0.015 cm(2)·V(-1)·s(-1)) compared to vacuum. This has been attributed to the enhanced polarization of hydroxyl groups in the presence of absorbed water molecules at the CuPc/PMMA interface. In addition, a model has been proposed based on the polarization of hydroxyl groups to explain the enhanced stability in these devices. We believe that this general method using a trilayer dielectric system can be extended to fabricate other OFETs with materials that are known to show high performances under vacuum but degrade under ambient conditions.
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Affiliation(s)
- Nimmakayala V V Subbarao
- Center for Nanotechnology, ‡Department of Physics, §Department of Chemistry, Indian Institute of Technology Guwahati , Guwahati-781039, India
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13
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Ahmed R, Kadashchuk A, Simbrunner C, Schwabegger G, Baig M, Sitter H. Geometrical structure and interface dependence of bias stress induced threshold voltage shift in C60-based OFETs. ACS APPLIED MATERIALS & INTERFACES 2014; 6:15148-15153. [PMID: 25142130 PMCID: PMC4159991 DOI: 10.1021/am5032192] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/27/2014] [Accepted: 08/21/2014] [Indexed: 06/03/2023]
Abstract
The influence of the nature of interface between organic semiconductor and gate dielectric on bias stress electrical stability of n-type C60-based organic field effect transistors (OFETs) was studied. The bias stress induced threshold voltage (Vth) shift was found to depend critically on the OFET device structure: the direction of V(th) shift in top-gate OFETs was opposite to that in bottom-gate OFETs, while the use of the dual-gate OFET structure resulted in just very small variations in V(th). The opposite direction of Vth shift is attributed to the different nature of interfaces between C60 semiconductor and Parylene dielectric in these devices. The V(th) shift to more positive voltages upon bias stress in bottom-gate C60-OFET was similar to that observed for other n-type semiconductors and rationalized by electron trapping in the dielectric or at the gate dielectric/C60 interface. The opposite direction of Vth shift in top-gate C60-OFETs is attributed to free radical species created in the course of Parylene deposition on the surface of C60 during device fabrication, which produce plenty of hole traps. It was also realized that the dual-gate OFETs gives stable characteristics, which are immune to bias stress effects.
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Affiliation(s)
- Rizwan Ahmed
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, A-4040 Linz, Austria
- National Center for Physics, Quaid-e-Azam
University Campus, Islamabad, Pakistan
| | - Andrey Kadashchuk
- Institute of Physics, National Academy of Sciences of Ukraine, 03028 Kyiv, Ukraine
- IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
| | - Clemens Simbrunner
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, A-4040 Linz, Austria
| | - Günther Schwabegger
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, A-4040 Linz, Austria
| | - Muhammad
Aslam Baig
- National Center for Physics, Quaid-e-Azam
University Campus, Islamabad, Pakistan
| | - Helmut Sitter
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, A-4040 Linz, Austria
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14
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Kumar B, Kaushik BK, Negi YS. Organic Thin Film Transistors: Structures, Models, Materials, Fabrication, and Applications: A Review. POLYM REV 2014. [DOI: 10.1080/15583724.2013.848455] [Citation(s) in RCA: 124] [Impact Index Per Article: 12.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
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15
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Meredith P, Bettinger CJ, Irimia-Vladu M, Mostert AB, Schwenn PE. Electronic and optoelectronic materials and devices inspired by nature. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2013; 76:034501. [PMID: 23411598 DOI: 10.1088/0034-4885/76/3/034501] [Citation(s) in RCA: 91] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities-some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the 'ubiquitous sensor network', all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow ('ionics and protonics') and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.
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Affiliation(s)
- P Meredith
- Centre for Organic Photonics and Electronics, School of Mathematics and Physics, University of Queensland, Brisbane, Queensland, Australia.
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16
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Schwabegger G, Djuric T, Sitter H, Resel R, Simbrunner C. Morphological and Structural Investigation of Sexithiophene Growth on KCl (100). CRYSTAL GROWTH & DESIGN 2013; 13:536-542. [PMID: 23413362 PMCID: PMC3567699 DOI: 10.1021/cg3010823] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2012] [Revised: 11/14/2012] [Indexed: 05/31/2023]
Abstract
The morphology and structure of sexithiophene deposited on KCl (100) substrates was investigated by scanning force microscopy and specular X-ray diffraction measurements. Two different needle-like structures with {010} and {4̅11} contact planes have been observed as well as islands of almost upright standing sexithiophene molecules with a {100} contact plane. Furthermore an azimuthal alignment of all three crystal orientations was observed by X-ray diffraction pole figure measurements, and the growth directions reflect the 4-fold rotational symmetry of the substrate surface. In addition the analysis of crystals with {4̅11} and {100} contact planes unveiled that they share a common crystallographic direction which is explained by ledge directed epitaxy.
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Affiliation(s)
- Günther Schwabegger
- Institute of Semiconductor and
Solid State Physics, Johannes Kepler University, Altenbergerstrasse
69, A-4040 Linz, Austria
| | - Tatjana Djuric
- Institute of Solid State Physics,
Graz University of Technology, Petersgasse 16, A-8010 Graz, Austria
| | - Helmut Sitter
- Institute of Semiconductor and
Solid State Physics, Johannes Kepler University, Altenbergerstrasse
69, A-4040 Linz, Austria
| | - Roland Resel
- Institute of Solid State Physics,
Graz University of Technology, Petersgasse 16, A-8010 Graz, Austria
| | - Clemens Simbrunner
- Institute of Semiconductor and
Solid State Physics, Johannes Kepler University, Altenbergerstrasse
69, A-4040 Linz, Austria
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17
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Kanbur Y, Irimia-Vladu M, Głowacki ED, Voss G, Baumgartner M, Schwabegger G, Leonat L, Ullah M, Sarica H, Erten-Ela S, Schwödiauer R, Sitter H, Küçükyavuz Z, Bauer S, Sariciftci NS. Vacuum-processed polyethylene as a dielectric for low operating voltage organic field effect transistors. ORGANIC ELECTRONICS 2012; 13:919-924. [PMID: 23483783 PMCID: PMC3587348 DOI: 10.1016/j.orgel.2012.02.006] [Citation(s) in RCA: 29] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2011] [Revised: 02/08/2012] [Accepted: 02/11/2012] [Indexed: 05/18/2023]
Abstract
We report on the fabrication and performance of vacuum-processed organic field effect transistors utilizing evaporated low-density polyethylene (LD-PE) as a dielectric layer. With C60 as the organic semiconductor, we demonstrate low operating voltage transistors with field effect mobilities in excess of 4 cm2/Vs. Devices with pentacene showed a mobility of 0.16 cm2/Vs. Devices using tyrian Purple as semiconductor show low-voltage ambipolar operation with equal electron and hole mobilities of ∼0.3 cm2/Vs. These devices demonstrate low hysteresis and operational stability over at least several months. Grazing-angle infrared spectroscopy of evaporated thin films shows that the structure of the polyethylene is similar to solution-cast films. We report also on the morphological and dielectric properties of these films. Our experiments demonstrate that polyethylene is a stable dielectric supporting both hole and electron channels.
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Affiliation(s)
- Yasin Kanbur
- Department of Polymer Science and Technology, Middle East Technical University, Balgat, Ankara, Turkey
- Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University, Linz, Austria
| | - Mihai Irimia-Vladu
- Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University, Linz, Austria
- Department of Soft Matter Physics, Johannes Kepler University, Linz, Austria
- Corresponding author. Address: Department of Soft Matter Physics & Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University, Linz, Austria. Tel.: + 43 732 2468 8767; fax: + 43 732 2468 9273.
| | - Eric D. Głowacki
- Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University, Linz, Austria
| | - Gundula Voss
- Department of Bioorganic Chemistry, University of Bayreuth, D-95440, Bayreuth, Germany
| | - Melanie Baumgartner
- Department of Soft Matter Physics, Johannes Kepler University, Linz, Austria
| | - Günther Schwabegger
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Austria
| | - Lucia Leonat
- Politehnica University of Bucharest, Faculty of Applied Chemistry and Materials Science, Bucharest, Romania
| | - Mujeeb Ullah
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Austria
| | - Hizir Sarica
- Ege University, Solar Energy Institute, Bornova-Izmir, Turkey
| | - Sule Erten-Ela
- Ege University, Solar Energy Institute, Bornova-Izmir, Turkey
| | | | - Helmut Sitter
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Austria
| | - Zuhal Küçükyavuz
- Department of Polymer Science and Technology, Middle East Technical University, Balgat, Ankara, Turkey
| | - Siegfried Bauer
- Department of Soft Matter Physics, Johannes Kepler University, Linz, Austria
| | - Niyazi Serdar Sariciftci
- Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University, Linz, Austria
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