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Fabini DH, Honasoge K, Cohen A, Bette S, McCall KM, Stoumpos CC, Klenner S, Zipkat M, Hoang LP, Nuss J, Kremer RK, Kanatzidis MG, Yaffe O, Kaiser S, Lotsch BV. Noncollinear Electric Dipoles in a Polar Chiral Phase of CsSnBr 3 Perovskite. J Am Chem Soc 2024; 146:15701-15717. [PMID: 38819106 PMCID: PMC11177262 DOI: 10.1021/jacs.4c00679] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/15/2024] [Revised: 05/14/2024] [Accepted: 05/16/2024] [Indexed: 06/01/2024]
Abstract
Polar and chiral crystal symmetries confer a variety of potentially useful functionalities upon solids by coupling otherwise noninteracting mechanical, electronic, optical, and magnetic degrees of freedom. We describe two phases of the 3D perovskite, CsSnBr3, which emerge below 85 K due to the formation of Sn(II) lone pairs and their interaction with extant octahedral tilts. Phase II (77 K < T < 85 K, space group P21/m) exhibits ferroaxial order driven by a noncollinear pattern of lone pair-driven distortions within the plane normal to the unique octahedral tilt axis, preserving the inversion symmetry observed at higher temperatures. Phase I (T < 77 K, space group P21) additionally exhibits ferroelectric order due to distortions along the unique tilt axis, breaking both inversion and mirror symmetries. This polar and chiral phase exhibits second harmonic generation from the bulk and pronounced electrostriction and negative thermal expansion along the polar axis (Q22 ≈ 1.1 m4 C-2; αb = -7.8 × 10-5 K-1) through the onset of polarization. The structures of phases I and II were predicted by recursively following harmonic phonon instabilities to generate a tree of candidate structures and subsequently corroborated by synchrotron X-ray powder diffraction and polarized Raman and 81Br nuclear quadrupole resonance spectroscopies. Preliminary attempts to suppress unintentional hole doping to allow for ferroelectric switching are described. Together, the polar symmetry, small band gap, large spin-orbit splitting of Sn 5p orbitals, and predicted strain sensitivity of the symmetry-breaking distortions suggest bulk samples and epitaxial films of CsSnBr3 or its neighboring solid solutions as candidates for bulk Rashba effects.
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Affiliation(s)
- Douglas H. Fabini
- Max
Planck Institute for Solid State Research, Stuttgart 70569, Germany
- Department
of Chemistry, Massachusetts Institute of
Technology, Cambridge, Massachusetts 02139, United States
| | - Kedar Honasoge
- Max
Planck Institute for Solid State Research, Stuttgart 70569, Germany
| | - Adi Cohen
- Department
of Chemical and Biological Physics, Weizmann
Institute of Science, Rehovot 76100, Israel
| | - Sebastian Bette
- Max
Planck Institute for Solid State Research, Stuttgart 70569, Germany
| | - Kyle M. McCall
- Department
of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Constantinos C. Stoumpos
- Department
of Materials Science and Technology, University
of Crete, Vassilika Voutes, Heraklion 70013, Greece
| | - Steffen Klenner
- Institut
für Anorganische und Analytische Chemie, Universität Münster, Münster 48149, Germany
| | - Mirjam Zipkat
- Department
of Chemistry, Ludwig-Maximilians-Universität, München 81377, Germany
| | - Le Phuong Hoang
- Max
Planck Institute for Solid State Research, Stuttgart 70569, Germany
| | - Jürgen Nuss
- Max
Planck Institute for Solid State Research, Stuttgart 70569, Germany
| | | | - Mercouri G. Kanatzidis
- Department
of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Omer Yaffe
- Department
of Chemical and Biological Physics, Weizmann
Institute of Science, Rehovot 76100, Israel
| | - Stefan Kaiser
- Max
Planck Institute for Solid State Research, Stuttgart 70569, Germany
| | - Bettina V. Lotsch
- Max
Planck Institute for Solid State Research, Stuttgart 70569, Germany
- Department
of Chemistry, Ludwig-Maximilians-Universität, München 81377, Germany
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2
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Li X, Zhang S, Zhang X, Vardeny ZV, Liu F. Topological Nodal-Point Superconductivity in Two-Dimensional Ferroelectric Hybrid Perovskites. NANO LETTERS 2024; 24:2705-2711. [PMID: 38240732 DOI: 10.1021/acs.nanolett.3c04085] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/07/2024]
Abstract
Two-dimensional (2D) hybrid organic-inorganic perovskites (HOIPs) with enhanced stability, high tunability, and strong spin-orbit coupling have shown great potential in vast applications. Here, we extend the already rich functionality of 2D HOIPs to a new territory, realizing topological superconductivity and Majorana modes for fault-tolerant quantum computation. Especially, we predict that room-temperature ferroelectric BA2PbCl4 (BA for benzylammonium) exhibits topological nodal-point superconductivity (NSC) and gapless Majorana modes on selected edges and ferroelectric domain walls when proximity-coupled to an s-wave superconductor and an in-plane Zeeman field, attractive for experimental verification and application. Since NSC is protected by spatial symmetry of 2D HOIPs, we envision more exotic topological superconducting states to be found in this class of materials due to their diverse noncentrosymmetric space groups, which may open a new avenue in the fields of HOIPs and topological superconductivity.
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Affiliation(s)
- Xiaoyin Li
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, United States
| | - Shunhong Zhang
- International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Xiaoming Zhang
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, People's Republic of China
| | - Zeev Valy Vardeny
- Department of Physics & Astronomy, University of Utah, Salt Lake City, Utah 84112, United States
| | - Feng Liu
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, United States
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Liu J, Su L, Zhang X, Shtansky DV, Fang X. Ferroelectric-Optoelectronic Hybrid System for Photodetection. SMALL METHODS 2024; 8:e2300319. [PMID: 37312397 DOI: 10.1002/smtd.202300319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2023] [Revised: 04/28/2023] [Indexed: 06/15/2023]
Abstract
Photodetectors (PDs), as functional devices based on photon-to-electron conversion, are an indispensable component for the next-generation Internet of Things system. The research of advanced and efficient PDs that meet the diverse demands is becoming a major task. Ferroelectric materials can develop a unique spontaneous polarization due to the symmetry-breaking of the unit cell, which is switchable under an external electric field. Ferroelectric polarization field has the intrinsic characteristics of non-volatilization and rewritability. Introducing ferroelectrics to effectively manipulate the band bending and carrier transport can be non-destructive and controllable in the ferroelectric-optoelectronic hybrid systems. Hence, ferroelectric integration offers a promising strategy for high-performance photoelectric detection. This paper reviews the fundamentals of optoelectronic and ferroelectric materials, and their interactions in hybrid photodetection systems. The first section introduces the characteristics and applications of typical optoelectronic and ferroelectric materials. Then, the interplay mechanisms, modulation effects, and typical device structures of ferroelectric-optoelectronic hybrid systems are discussed. Finally, in summary and perspective section, the progress of ferroelectrics integrated PDs is summed up and the challenges of ferroelectrics in the field of optoelectronics are considered.
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Affiliation(s)
- Jie Liu
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Li Su
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Xinglong Zhang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Dmitry V Shtansky
- National University of Science and Technology "MISIS", Moscow, 119049, Russia
| | - Xiaosheng Fang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
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4
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Xu J, Li K, Huynh UN, Fadel M, Huang J, Sundararaman R, Vardeny V, Ping Y. How spin relaxes and dephases in bulk halide perovskites. Nat Commun 2024; 15:188. [PMID: 38168025 PMCID: PMC10761878 DOI: 10.1038/s41467-023-42835-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/13/2022] [Accepted: 10/23/2023] [Indexed: 01/05/2024] Open
Abstract
Spintronics in halide perovskites has drawn significant attention in recent years, due to their highly tunable spin-orbit fields and intriguing interplay with lattice symmetry. Here, we perform first-principles calculations to determine the spin relaxation time (T1) and ensemble spin dephasing time ([Formula: see text]) in a prototype halide perovskite, CsPbBr3. To accurately capture spin dephasing in external magnetic fields we determine the Landé g-factor from first principles and take it into account in our calculations. These allow us to predict intrinsic spin lifetimes as an upper bound for experiments, identify the dominant spin relaxation pathways, and evaluate the dependence on temperature, external fields, carrier density, and impurities. We find that the Fröhlich interaction that dominates carrier relaxation contributes negligibly to spin relaxation, consistent with the spin-conserving nature of this interaction. Our theoretical approach may lead to new strategies to optimize spin and carrier transport properties.
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Affiliation(s)
- Junqing Xu
- Department of Physics, Hefei University of Technology, Hefei, Anhui, China
- Department of Chemistry and Biochemistry, University of California, Santa Cruz, CA, USA
| | - Kejun Li
- Department of Physics, University of California, Santa Cruz, California, USA
| | - Uyen N Huynh
- Department of Physics and Astronomy, University of Utah, Salt Lake City, UT, USA
| | - Mayada Fadel
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA
| | - Jinsong Huang
- Department of Applied Physical Sciences, University of North Carolina, Chapel Hill, NC, USA
| | - Ravishankar Sundararaman
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA.
| | - Valy Vardeny
- Department of Physics and Astronomy, University of Utah, Salt Lake City, UT, USA.
| | - Yuan Ping
- Department of Physics, University of California, Santa Cruz, California, USA.
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, USA.
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5
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Kashikar R, Popoola A, Lisenkov S, Stroppa A, Ponomareva I. Persistent and Quasipersistent Spin Textures in Halide Perovskites Induced by Uniaxial Stress. J Phys Chem Lett 2023; 14:8541-8547. [PMID: 37724873 DOI: 10.1021/acs.jpclett.3c02248] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/21/2023]
Abstract
Persistent spin textures are highly desirable for applications in spintronics, as they allow for long carrier spin lifetimes. However, they are also rare, as they require a delicate balance between spin-momentum coupling parameters. We used density functional theory simulations to predict the possibility of achieving these desirable spin textures through the application of uniaxial stress. Hybrid organic-inorganic perovskite MPSnBr3 (MP = CH3PH3) is a ferroelectric semiconductor which exhibits persistent spin textures near its conduction band minimum and mostly Rashba type spin textures in the vicinity of its valence band maximum. Application of uniaxial stress leads to the gradual evolution of the valence band spin textures from mostly Rashba type to quasipersistent ones under a tensile load and to pure Rashba or quasipersistent ones under a compressive load. The material exhibits flexibility, a rubber-like response, and both positive and negative piezoelectric constants. A combination of such properties may create opportunities for flexible and rubbery spintronic devices.
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Affiliation(s)
- Ravi Kashikar
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| | - Abduljelili Popoola
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| | - Sergey Lisenkov
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| | - A Stroppa
- Consiglio Nazionale delle Ricerche, Institute for Superconducting and Innovative Materials and Devices (CNR-SPIN), c/o Department of Physical and Chemical Sciences, University of L'Aquila, Via Vetoio I-67100 Coppito L'Aquila, Italy
| | - I Ponomareva
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
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6
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Simbula A, Wu L, Pitzalis F, Pau R, Lai S, Liu F, Matta S, Marongiu D, Quochi F, Saba M, Mura A, Bongiovanni G. Exciton dissociation in 2D layered metal-halide perovskites. Nat Commun 2023; 14:4125. [PMID: 37433858 DOI: 10.1038/s41467-023-39831-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/14/2022] [Accepted: 06/29/2023] [Indexed: 07/13/2023] Open
Abstract
Layered 2D perovskites are making inroads as materials for photovoltaics and light emitting diodes, but their photophysics is still lively debated. Although their large exciton binding energies should hinder charge separation, significant evidence has been uncovered for an abundance of free carriers among optical excitations. Several explanations have been proposed, like exciton dissociation at grain boundaries or polaron formation, without clarifying yet if excitons form and then dissociate, or if the formation is prevented by competing relaxation processes. Here we address exciton stability in layered Ruddlesden-Popper PEA2PbI4 (PEA stands for phenethylammonium) both in form of thin film and single crystal, by resonant injection of cold excitons, whose dissociation is then probed with femtosecond differential transmission. We show the intrinsic nature of exciton dissociation in 2D layered perovskites, demonstrating that both 2D and 3D perovskites are free carrier semiconductors and their photophysics is described by a unique and universal framework.
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Affiliation(s)
- Angelica Simbula
- Dipartimento di Fisica, Università degli Studi di Cagliari, Monserrato, CA, I-09042, Italy.
| | - Luyan Wu
- Dipartimento di Fisica, Università degli Studi di Cagliari, Monserrato, CA, I-09042, Italy
| | - Federico Pitzalis
- Dipartimento di Fisica, Università degli Studi di Cagliari, Monserrato, CA, I-09042, Italy
| | - Riccardo Pau
- Dipartimento di Fisica, Università degli Studi di Cagliari, Monserrato, CA, I-09042, Italy
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 09747, AG, Groningen, The Netherlands
| | - Stefano Lai
- Dipartimento di Fisica, Università degli Studi di Cagliari, Monserrato, CA, I-09042, Italy
| | - Fang Liu
- School of Environmental Science and Engineering, Frontiers Science Center for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Selene Matta
- Dipartimento di Fisica, Università degli Studi di Cagliari, Monserrato, CA, I-09042, Italy
| | - Daniela Marongiu
- Dipartimento di Fisica, Università degli Studi di Cagliari, Monserrato, CA, I-09042, Italy
| | - Francesco Quochi
- Dipartimento di Fisica, Università degli Studi di Cagliari, Monserrato, CA, I-09042, Italy
| | - Michele Saba
- Dipartimento di Fisica, Università degli Studi di Cagliari, Monserrato, CA, I-09042, Italy.
| | - Andrea Mura
- Dipartimento di Fisica, Università degli Studi di Cagliari, Monserrato, CA, I-09042, Italy
| | - Giovanni Bongiovanni
- Dipartimento di Fisica, Università degli Studi di Cagliari, Monserrato, CA, I-09042, Italy
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7
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Xue Z, Xu Y, Jin C, Liang Y, Cai Z, Sun J. Halide perovskite photoelectric artificial synapses: materials, devices, and applications. NANOSCALE 2023; 15:4653-4668. [PMID: 36805124 DOI: 10.1039/d2nr06403k] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In recent years, there has been a research boom on halide perovskites (HPs) whose outstanding performance in photovoltaic and optoelectronic fields is obvious to all. In particular, HP materials find application in the development of artificial synapses. HP-based synapses have great potential for artificial neuromorphic systems, which is due to their outstanding optoelectronic properties, femtojoule-level energy consumption, and simple fabrication process. In this review, we present the physical properties of HPs and describe two types of synaptic devices including two-terminal (2T) memristors and three-terminal (3T) transistors. The HP layer in 2T memristors can realize the change in the device conductance through physical mechanisms dominated by ion migration. On the other hand, HPs in 3T transistors can be used as efficient light-absorbing layers and rely on some special device structures to provide reliable current changes. In the final section of the article, we discuss some of the existing applications of HP-based synapses and bottlenecks to be solved.
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Affiliation(s)
- Zhengyang Xue
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Yunchao Xu
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Chenxing Jin
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Yihuan Liang
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Zihao Cai
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Jia Sun
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
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8
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Sheoran S, Monga S, Phutela A, Bhattacharya S. Coupled Spin-Valley, Rashba Effect, and Hidden Spin Polarization in WSi 2N 4 Family. J Phys Chem Lett 2023; 14:1494-1503. [PMID: 36745045 DOI: 10.1021/acs.jpclett.2c03108] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Using first-principles calculations, we report the electronic properties with a special focus on the band splitting in the WSi2N4 class of materials. Due to the broken inversion symmetry and strong spin-orbit coupling, we detect coupled spin-valley effects at the corners of the first Brillouin zone (BZ). Additionally, we observe cubically and linearly split bands around the Γ and M points, respectively. The in-plane mirror symmetry (σh) and reduced symmetry of the arbitrary k-point, enforce the persistent spin textures (PST) to occur in full BZ. We induce the Rashba splitting by breaking the σh through an out-of-plane external electric field (EEF). The inversion asymmetric site point group of the W atom introduces the hidden spin polarization in centrosymmetric layered bulk counterparts. Low energy k.p models demonstrate that the PST along the M-K line is robust to EEF and layer thickness, making them suitable for applications in spintronics and valleytronics.
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Affiliation(s)
- Sajjan Sheoran
- Department of Physics, Indian Institute of Technology Delhi, New Delhi, 110016, India
| | - Sanchi Monga
- Department of Physics, Indian Institute of Technology Delhi, New Delhi, 110016, India
| | - Ankita Phutela
- Department of Physics, Indian Institute of Technology Delhi, New Delhi, 110016, India
| | - Saswata Bhattacharya
- Department of Physics, Indian Institute of Technology Delhi, New Delhi, 110016, India
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9
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Absor MAU, Lukmantoro A, Santoso I. Full-zone persistent spin textures with giant spin splitting in two-dimensional group IV-V compounds. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:445501. [PMID: 35998620 DOI: 10.1088/1361-648x/ac8c14] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2022] [Accepted: 08/23/2022] [Indexed: 06/15/2023]
Abstract
Persistent spin texture (PST), a property of solid-state materials maintaining unidirectional spin polarization in the momentumk-space, offers a route to deliver the necessary long carrier spin lifetimes through the persistent spin helix (PSH) mechanism. However, most of the discovered PST locally occurred in the small part around certain high symmetryk-points or lines in the first Brillouin zone (FBZ), thus limiting the stability of the PSH state. Herein, by symmetry analysis and first-principles calculations, we report the emergence of full-zone PST (FZPST), a phenomenon displaying the PST in the whole FBZ, in the two-dimensional group IV-VA2B2(A= Si, Sn, Ge;B= Bi, Sb) compounds. Due to the existence of the in-plane mirror symmetry operation in the wave vector point group symmetry for the arbitraryk⃗in the whole FBZ, fully out-of-plane spin polarization is observed in thek-space, thus maintaining the FZPST. Importantly, we observed giant spin splitting in which the PST sustains, supporting large spin-orbit coupling parameters and small wavelengths of the PSH states. Ourk⃗⋅p⃗analysis demonstrated that the FZPST is robust for the non-degenerate bands, which can be effectively controlled by the application of an external electric field, thus offering a promising platform for future spintronic applications.
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Affiliation(s)
- Moh Adhib Ulil Absor
- Department of Physics, Universitas Gadjah Mada, Sekip Utara BLS 21, Yogyakarta 55281, Indonesia
| | - Arif Lukmantoro
- Department of Physics, Universitas Gadjah Mada, Sekip Utara BLS 21, Yogyakarta 55281, Indonesia
| | - Iman Santoso
- Department of Physics, Universitas Gadjah Mada, Sekip Utara BLS 21, Yogyakarta 55281, Indonesia
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10
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Liu XL, Li D, Zhao HX, Dong XW, Long LS, Zheng LS. Inorganic-Organic Hybrid Molecular Materials: From Multiferroic to Magnetoelectric. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2004542. [PMID: 33829543 DOI: 10.1002/adma.202004542] [Citation(s) in RCA: 30] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/03/2020] [Revised: 11/07/2020] [Indexed: 06/12/2023]
Abstract
Inorganic-organic hybrid molecular multiferroic and magnetoelectric materials, similar to multiferroic oxide compounds, have recently attracted increasing attention because they exhibit diverse architectures, a flexible framework, fascinating physics, and potential magnetoelectric functionalities in novel multifunctional devices such as energy transformation devices, sensors, and information storage systems. Herein, the classification of multiferroicity and magnetoelectricity is briefly outlined and then the recent advances in the multiferroicity and magnetoelectricity of inorganic-organic hybrid molecular materials, particularly magnetoelectricity and the relevant magnetoelectric mechanisms and their categories are summarized. In addition, a personal perspective and an outlook are provided.
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Affiliation(s)
- Xiao-Lin Liu
- Collaborative Innovation Center of Chemistry for Energy Materials, State Key Laboratory of Physical Chemistry of Solid Surfaces, and Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, P. R. China
| | - Dong Li
- Collaborative Innovation Center of Chemistry for Energy Materials, State Key Laboratory of Physical Chemistry of Solid Surfaces, and Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, P. R. China
| | - Hai-Xia Zhao
- Collaborative Innovation Center of Chemistry for Energy Materials, State Key Laboratory of Physical Chemistry of Solid Surfaces, and Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, P. R. China
| | - Xin-Wei Dong
- Department of Physics and Institute of Theoretical Physics and Astrophysics, Xiamen University, Xiamen, 361005, P. R. China
| | - La-Sheng Long
- Collaborative Innovation Center of Chemistry for Energy Materials, State Key Laboratory of Physical Chemistry of Solid Surfaces, and Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, P. R. China
| | - Lan-Sun Zheng
- Collaborative Innovation Center of Chemistry for Energy Materials, State Key Laboratory of Physical Chemistry of Solid Surfaces, and Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, P. R. China
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11
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Yu S, Wang Y, Wang S, Zhang H, Huang B, Dai Y, Wei W. Robust Intrinsic Multiferroicity in a FeHfSe 3 Layer. J Phys Chem Lett 2021; 12:8882-8888. [PMID: 34498870 DOI: 10.1021/acs.jpclett.1c02615] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
As a consequence of the mutually exclusive origins of ferroelectricity and magnetism, multiferroic materials with electromagnetic coupling are rare. In this work, stable two-dimensional FeHfSe3 with experimental accessibility is however demonstrated to harbor robust electromagnetic coupling. FeHfSe3 illustrates spontaneous in-plane polarization of 1.29 × 10-10 C/m, and the energy barrier of 116.54 meV ensures easy switching and a high Curie temperature. In addition, semiconducting FeHfSe3 possesses a stable antiferromagnetic ground state with a Néel temperature of approximately 300 K. In the case of applying strain, ferroelectricity and magnetism coexist stably, and uniaxial tensile strain can effectively enhance the ferroelectricity.
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Affiliation(s)
- Shiqiang Yu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yuanyuan Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Shuhua Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Haona Zhang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Wei Wei
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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12
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13
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Huang CR, Luo X, Chen XG, Song XJ, Zhang ZX, Xiong RG. A multiaxial lead-free two-dimensional organic-inorganic perovskite ferroelectric. Natl Sci Rev 2021; 8:nwaa232. [PMID: 34691638 PMCID: PMC8288432 DOI: 10.1093/nsr/nwaa232] [Citation(s) in RCA: 33] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/04/2020] [Revised: 07/13/2020] [Accepted: 08/19/2020] [Indexed: 11/14/2022] Open
Abstract
Two-dimensional (2D) hybrid organic-inorganic perovskites (HOIPs) have recently gained tremendous interest because of their unique features in contrast to three-dimensional counterparts and traditional 2D materials. However, although some 2D HOIP ferroelectrics have been achieved, the issue of toxic Pb and uniaxial nature impede their further application. Herein, for the first time, we report a lead-free 2D HOIP multiaxial ferroelectric, [3,3-difluorocyclobutylammonium]2CuCl4 (1), which shows four ferroelectric axes and eight equivalent polarization directions, more than those of the other 2D HOIP ferroelectrics and even the inorganic perovskite ferroelectric BaTiO3 (three ferroelectric axes and six equivalent polarization directions). 1 also features a high Curie temperature of 380 K and exhibits remarkable thermochromism of color change from green-yellow to dark brown. To our knowledge, 1 is the first multiaxial lead-free 2D HOIP ferroelectric. This work sheds light on the exploration of better lead-free 2D HOIP ferroelectrics.
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Affiliation(s)
- Chao-Ran Huang
- Key Laboratory of Organo-Pharmaceutical Chemistry of Jiangxi Province, College of Chemistry and Chemical Engineering, Gannan Normal University, Ganzhou 341000, China
| | - Xuzhong Luo
- Key Laboratory of Organo-Pharmaceutical Chemistry of Jiangxi Province, College of Chemistry and Chemical Engineering, Gannan Normal University, Ganzhou 341000, China
| | - Xiao-Gang Chen
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, China
| | - Xian-Jiang Song
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, China
| | - Zhi-Xu Zhang
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, China
| | - Ren-Gen Xiong
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, China
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Excitons competition regulation via organic cation-site and halogen-site co-halogenation of (X-p-PEA) 2Pb(Cl/Br) 4 perovskites. J Colloid Interface Sci 2021; 588:494-500. [PMID: 33429346 DOI: 10.1016/j.jcis.2020.12.094] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/07/2020] [Revised: 12/21/2020] [Accepted: 12/24/2020] [Indexed: 11/23/2022]
Abstract
In this work, we report a family of co-halogenated two-dimensional hybrid perovskites (2DHPs) based on phenethylammonium lead halogen ((PEA)2Pb(Cl/Br)4) in which the organic cation-site (PEA) is substituted with halogen at the para-site, namely the formation of 4-halophenethylamine (X-p-PEA) (X = Cl, Br; p: para-site). The organic cations are regulated by introducing halogen ions at the para-site of the benzene ring to promote the structural distortion of the lead halide octahedral inorganic layer. Furthermore, (X-p-PEA) causes a shift in the energy band distribution of 2DHPs. In this case, the photoluminescence competition of free excitons (FEs) and self-trapped excitons (STEs) changes the microscopic relaxation process of excitons. In addition, we found that (Br-p-PEA) can increase the photoluminescence quantum yield (PLQY). At the same time, we regulate the halogen-site of perovskites from lead-chloride perovskites (LCPs) to lead bromine perovskites (LBPs), achieving emission from white light to blue light. Therefore, the co-halogenation regulation strategy of organic cation-site and halogen-site can effectively regulate the photoluminescence wavelength and improve the PLQY. This is of great significance for the development of perovskite materials with specific optoelectronic applications.
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Yang Y, Lou F, Xiang H. Cooperative Nature of Ferroelectricity in Two-Dimensional Hybrid Organic-Inorganic Perovskites. NANO LETTERS 2021; 21:3170-3176. [PMID: 33754732 DOI: 10.1021/acs.nanolett.1c00395] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) ferroelectric (FE) hybrid organic-inorganic perovskites (HOIPs) are promising for potential applications as miniaturized flexible ferroelectric/piezoelectric devices. Recently, several 2D HOIPs [e.g., Ruddlensden-Popper type HOIP BA2PbCl4 (BA = C6H5CH2NH3+)] were reported to possess room-temperature ferroelectricity. However, the underlying microscopic mechanisms for ferroelectricity in 2D HOIPs remain elusive. Here, by performing first-principles calculations and symmetry mode analysis, we demonstrate that there exists a cooperative coupling between A-site organic molecules and B-site inorganic Pb2+ ions that is essential to the ferroelectricity in 2D BA2PbCl4. The nonpolar ground state of the closely related compounds BA2PbBr4 and BA2PbI4 can also be explained in terms of the weakened cooperative coupling. We further predict that 2D BA2PbF4 displays in-plane ferroelectricity with a higher Curie temperature and larger electric polarization. Our work not only reveals the unusual FE mechanism in 2D HOIPs but also provides a solid theoretical basis for the rational design of 2D multifunctional materials.
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Affiliation(s)
- Yali Yang
- Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
- Shanghai Qizhi Institution, Shanghai 200232, People's Republic of China
| | - Feng Lou
- Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
- Shanghai Qizhi Institution, Shanghai 200232, People's Republic of China
| | - Hongjun Xiang
- Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
- Shanghai Qizhi Institution, Shanghai 200232, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, People's Republic of China
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Zhao HJ, Nakamura H, Arras R, Paillard C, Chen P, Gosteau J, Li X, Yang Y, Bellaiche L. Purely Cubic Spin Splittings with Persistent Spin Textures. PHYSICAL REVIEW LETTERS 2020; 125:216405. [PMID: 33275000 DOI: 10.1103/physrevlett.125.216405] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2020] [Revised: 08/10/2020] [Accepted: 10/09/2020] [Indexed: 06/12/2023]
Abstract
Purely cubic spin splittings in the band structure of bulk insulators have not been extensively investigated yet despite the fact that they may pave the way for novel spin-orbitronic applications and can also result in a variety of promising spin phenomena. By symmetry analysis and first-principles simulations, we report symmetry-enforced purely cubic spin splittings (SEPCSS) that can even lead to persistent spin textures. In particular, these SEPCSS can be thought to be complementary to the cubic Rashba and cubic Dresselhaus types of spin splittings. Strikingly, the presently discovered SEPCSS are expected to exist in the large family of materials crystallizing in the 6[over ¯]m2 and 6[over ¯] point groups, including the Ge_{3}Pb_{5}O_{11}, Pb_{7}Br_{2}F_{12}, and Pb_{7}Cl_{2}F_{12} compounds.
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Affiliation(s)
- Hong Jian Zhao
- Physics Department, University of Arkansas, Fayetteville, Arkansas 72701, USA
- Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Hiro Nakamura
- Physics Department, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Rémi Arras
- CEMES, Université de Toulouse, CNRS, UPS, 29 Rue Jeanne Marvig, F-31055 Toulouse, France
| | - Charles Paillard
- Physics Department, University of Arkansas, Fayetteville, Arkansas 72701, USA
- Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
- Laboratoire SPMS, CentraleSuplec/CNRS UMR8580, Université Paris-Saclay, 8-10 Rue Joliot-Curie, 91190 Gif-sur-Yvette, France
| | - Peng Chen
- Physics Department, University of Arkansas, Fayetteville, Arkansas 72701, USA
- Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Julien Gosteau
- CEMES, Université de Toulouse, CNRS, UPS, 29 Rue Jeanne Marvig, F-31055 Toulouse, France
| | - Xu Li
- Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Yurong Yang
- Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Laurent Bellaiche
- Physics Department, University of Arkansas, Fayetteville, Arkansas 72701, USA
- Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
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