Two-Dimensional Gallium Oxide Monolayer for Gas-Sensing Application

Edge-Dependent Step-Flow Growth Mechanism in β-Ga2O3 (100) Facet at the Atomic Level

Homoepitaxial step-flow growth of high-quality β-Ga2O3 thin films is essential for the advancement of high-performance Ga2O3-based devices. In this work, the step-flow growth mechanism of the β-Ga2O3 (100) facet is explored by machine-learning molecular dynamics simulations and density functional theory calculations. Our results reveal that Ga adatoms and Ga-O adatom pairs, with their high mobility, are the primary atomic species responsible for efficient surface migration on the (100) facet. The asymmetric monoclinic structure of β-Ga2O3 induces a distinct two-stage Ehrlich-Schwoebel barrier for Ga adatoms at the [00-1] step edge, contributing to the suppression of double-step and hillock formation. Furthermore, a miscut toward [00-1] does not induce the nucleation of stable twin boundaries, whereas a miscut toward [001] leads to the spontaneous formation of twin boundaries. This research provides meaningful insights not only for high-quality β-Ga2O3 homoepitaxy but also the step-flow growth mechanism of other similar systems.

Integration of High-Performance FETs and Sensitive Gas Sensors Using Janus WSiGeP4 for Trace Toxic Gas Detection

Integrating a field-effect transistor (FET) and FET-type gas sensor within a single two-dimensional (2D) semiconducting material is essential for achieving on-chip detection of trace concentrations of toxic gas. This technology allows the output signal of the gas sensor to be amplified directly by the FET on an integrated circuit, enabling complex analyses to be performed in a compact and efficient manner. However, achieving this integration is currently challenging. In this study, using first-principles calculations, we demonstrate that a Janus WSiGeP4 monolayer with out-of-plane polarization can be utilized to create both a high-performance top-gate FET and an ultrasensitive bottom-gate FET-type gas sensor, thereby facilitating the integration of these two devices. The key performance metrics of the designed FET align with the standards set by the International Technology Roadmap for Semiconductors (ITRS) for high-performance applications, while the gas sensor exhibits high response to both NO and NH3 gases in the low oxygen air and humid environment with ultrahigh responses of 301.2 and 99.4 toward NO and NH3 gas, respectively. Our work provides a promising strategy for integrating these two devices within a single 2D material.

A Radial Distribution Function Based Recognition Algorithm of Point Defects in Large-Scale β-Ga2O3 Systems

The atomic configurations and concentrations of intrinsic defects profoundly influence the electrical and optical properties of the semiconductor materials. This influence is particularly significant in the case of β-Ga2O3, which is a highly promising ultrawide bandgap semiconductor characterized by highly complex intrinsic defect configurations. Despite its importance, there is a notable absence of an accurate method to recognize these defects in large-scale atomistic computational modeling. We design an effective algorithm for the explicit identification of various intrinsic point defects in the β-Ga2O3 lattice, which constitutes the integration of the particle swarm optimization (PSO) and K-means clustering (K-MC) methods. Our algorithm attains the recognition accuracy exceeding 95%. Finally, the algorithm is applied to dynamic simulations, where the feasibility of dynamic real-time detection is explored.

Susceptible Detection of Organic Molecules Based on C3B/Graphene and C3N/Graphene van der Waals Heterojunction Gas Sensors

Constructing van der Waals (vdW) heterostructures is a prospective approach that is essential for developing a new generation of functional two-dimensional (2D) materials and designing new conceptual nanodevices. Using density-functional theory combined with a nonequilibrium Green's function approach allows for the theoretical and systematic exploration of the electronic structure, transport properties, and sensitivity of organic small molecules adsorbed on 2D C3B/graphene (Gra) and C3N/Gra vdW heterojunctions. Calculations show the metallic properties of C3B/Gra and C3N/Gra after the formation of heterojunctions. Interestingly, the heterojunctions C3B/Gra (C3N/Gra) for the adsorption of small organic molecules (C2H2, C2H4, CH3OH, CH4, and HCHO) at the C3B (C3N) side are sensitive to the chemisorption of C2H2 and C2H4. Similarly, the Gra/C3B is chemisorbed for both C2H2 and C2H4 when adsorbed on Gra side, while it is only chemisorbed for C2H2 in Gra/C3N. Interestingly, all heterojunctions on different sides are physisorbed for CH3OH, CH4, and HCHO. Furthermore, the calculated I-V curves demonstrate that the devices based on the adsorption of C2H2 and C2H4 at each side of the heterojunction have remarkable anisotropy, in with the current being considerably greater in the zigzag direction than in the armchair direction. More specifically, with C2H2 adsorbed on the Gra side, the sensitivity along the armchair direction is up to 85.0% for Gra/C3B and close to 100% for Gra/C3N. This study reveals that C3B/Gra (C3N/Gra) heterojunctions with high selectivity, high anisotropy, and excellent sensitivity are highly prospective 2D materials for applications, which further contributes new insights into the development of future electronic nanodevices.

A resilient type-III broken gap Ga2O3/SiC van der Waals heterogeneous bilayer with band-to-band tunneling effect and tunable electronic property

The potential of van der Waals (vdW) heterostructure to incorporate the outstanding features of stacked materials to meet a variety of application requirements has drawn considerable attention. Due to the unique quantum tunneling mechanisms, a type-III broken-gap obtained from vdW heterostructure is a promising design strategy for tunneling field-effect transistors. Herein, a unique Ga2O3/SiC vdW bilayer heterostructure with inherent type-III broken gap band alignment has been revealed through first-principles calculation. The underlying physical mechanism to form the broken gap band alignment is thoroughly studied. Due to the overlapping band structures, a tunneling window of 0.609 eV has been created, which enables the charges to tunnel from the VBM of the SiC layer to the CBM of the Ga2O3 layer and fulfills the required condition for band-to-band tunneling. External electric field and strain can be applied to tailor the electronic behavior of the bilayer heterostructure. Positive external electric field and compressive vertical strain enlarge the tunneling window and enhance the band-to-band tunneling (BTBT) scheme while negative electric field and tensile vertical strain shorten the BTBT window. Under external electric field as well as vertical and biaxial strain, the Ga2O3/SiC vdW hetero-bilayer maintains the type-III band alignment, revealing its capability to tolerate the external electric field and strain with resilience. All these results provide a compelling platform of the Ga2O3/SiC vdW bilayer to design high performance tunneling field effect transistor.

Realization of efficient and selective NO and NO2 detection via surface functionalized h-B2S2 monolayer

In the ever-growing field of two-dimensional (2D) materials, the boron-sulfide (B2S2) monolayer is a promising new addition to MoS2-like 2D materials, with the boron (a lighter element) pair (B2 pair) having similar valence electrons to Mo. Herein, we have functionalized the h-phase boron sulfide monolayer by introducing oxygen atoms (Oh-B2S2) to widen its application scope as a gas sensor. The charge carrier mobilities of this system were found to be 790 × 102 cm2 V-1 s-1 and 32 × 102 cm2 V-1 s-1 for electrons and holes, respectively, which are much higher than the mobilities of the MoS2 monolayer. The potential application of the 2D Oh-B2S2 monolayer in the realm of gas sensing was evaluated using a combination of density functional theory (DFT), ab initio molecular dynamics (AIMD), and non-equilibrium Green's function (NEGF) based simulations. Our results imply that the Oh-B2S2 monolayer outperforms graphene and MoS2 in NO and NO2 selective sensing with higher adsorption energies (-0.56 and -0.16 eV) and charge transfer values (0.34 and 0.13e). Furthermore, the current-voltage characteristics show that the Oh-B2S2 monolayer may selectively detect NO and NO2 gases after bias 1.4 V, providing a greater possibility for the development of boron-based gas-sensing devices for future nanoelectronics.

Robust Magnetoelectric Coupling in FeTiO3/Ga2O3 Non-van der Waals Heterostructures

Magnetoelectric coupling represents a significant breakthrough for next-generation electronics, offering the ability to achieve nonvolatile magnetic control via electrical means. In this comprehensive investigation, leveraging first-principles calculations, we unveil a robust magnetoelectric coupling within multiferroic heterostructures (HSs) by ingeniously integrating a non-van der Waals (non-vdW) magnetic FeTiO3 monolayer with the ferroelectric (FE) Ga2O3. Diverging from conventional van der Waals (vdW) multiferroic HSs, the magnetic states of the FeTiO3 monolayer can be efficiently toggled between ferromagnetic (FM) and antiferromagnetic (AFM) configurations by reversing the polarization of the Ga2O3 monolayer. This intriguing phenomenon arises from polarization-dependent substantial interlayer electron transfers and the interplay between superexchange and direct-exchange magnetic couplings of the iron atoms. The carrier-mediated interfacial interactions induce crucial shifts in Fermi level positions, decisively imparting distinct electronic characteristics near the Fermi level of composite systems. These novel findings offer exciting prospects for the future of magnetoelectric technology.

Unravelling the surface structure of β-Ga2O3 (100)

The present work is on a comprehensive surface atomic structure investigation of β-Ga2O3 (100). The β-Ga2O3 single crystal was studied by a structural model system in the simulations and in situ characterization via X-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED) and X-ray photoelectron diffraction (XPD) allowed for probing the outermost layers' properties. In situ XPD characterization allows for the collection of valuable element-specific short-range information from the β-Ga2O3 surface, and the results were compared to a systematic and precise multiple scattering simulation approach. The experiments, characterizations, and simulations indicated strong evidence of considerable structural variations in the interatomic layer's distances. Such atomic displacement could clarify the electronic phenomena observed in theoretical studies. The comparison between experimental and theoretical XPD results involving multiple scattering calculations indicated that the β-Ga2O3 surface has two possible terminations. The best fits to the photoelectron diffraction curves are used to calculate the interplanar relaxation in the first five atomic layers. The results show good agreement with previous density functional theory calculations, establishing XPD as a useful tool for probing the atomic structure of oxide surfaces.

Preparation, Chemical Composition, and Optical Properties of (β-Ga2O3 Composite Thin Films)/(GaSxSe1-x Lamellar Solid Solutions) Nanostructures

GaS_xSe_1-x solid solutions are layered semiconductors with a band gap between 2.0 and 2.6 eV. Their single crystals are formed by planar packings of S/Se-Ga-Ga-S/Se type, with weak polarization bonds between them, which allows obtaining, by splitting, plan-parallel lamellae with atomically smooth surfaces. By heat treatment in a normal or water vapor-enriched atmosphere, their plates are covered with a layer consisting of β-Ga₂O₃ nanowires/nanoribbons. In this work, the elemental and chemical composition, surface morphology, as well as optical, photoluminescent, and photoelectric properties of β-Ga₂O₃ layer formed on GaS_xSe_1-x (0 ≤ x ≤ 1) solid solutions (as substrate) are studied. The correlation is made between the composition (x) of the primary material, technological preparation conditions of the oxide-semiconducting layer, and the optical, photoelectric, and photoluminescent properties of β-Ga₂O₃ (nanosized layers)/GaS_xSe_1-x structures. From the analysis of the fundamental absorption edge, photoluminescence, and photoconductivity, the character of the optical transitions and the optical band gap in the range of 4.5-4.8 eV were determined, as well as the mechanisms behind blue-green photoluminescence and photoconductivity in the fundamental absorption band region. The photoluminescence bands in the blue-green region are characteristic of β-Ga₂O₃ nanowires/nanolamellae structures. The photoconductivity of β-Ga₂O₃ structures on GaS_xSe_1-x solid solution substrate is determined by their strong fundamental absorption. As synthesized structures hold promise for potential applications in UV receivers, UV-C sources, gas sensors, as well as photocatalytic decomposition of water and organic pollutants.

High-Throughput Screening of Gas Sensor Materials for Decomposition Products of Eco-Friendly Insulation Medium by Machine Learning

Nowadays, trifluoromethyl sulfonyl fluoride (CF3SO2F) has shown great potential to replace SF6 as an eco-friendly insulation medium in the power industry. In this work, an effective and low-cost design strategy toward ideal gas sensors for the decomposed gas products of CF3SO2F was proposed. The strategy achieved high-throughput screening from a large candidate space based on first-principle calculation and machine learning (ML). The candidate space is made up of different transition metal-embedded graphic carbon nitrides (TM/g-C3N4) owing to their high surface area and subtle electronic structure. Four main noteworthy decomposition gases of CF3SO2F, namely, CF4, SO2, SO2F2, and HF, as well as their initial stable structure on TM/g-C3N4 were determined. The best-performing ML model was established and implemented to predict the interaction strength between gas products and TM/g-C3N4, thus determining the promising gas-sensing materials for target gases with the requirements of interaction strength, recovery time, sensitivity, and selectivity. Further analysis guarantees their stability and reveals the origin of excellent properties as a gas sensor. The high-throughput strategy opens a new avenue of rational and low-cost design principles of desirable gas-sensing materials in an interdisciplinary view.

Deep-learning-assisted theoretical insights into the compatibility of environment friendly insulation medium with metal surface of power equipment

Exploring a new generation of eco-friendly gas insulation medium to replace greenhouse gas sulphur hexafluoride (SF₆) in power industry is significant for reducing the greenhouse effect and building a low-carbon environment. The gas-solid compatibility of insulation gas with various electrical equipment is also of significance before practical applications. Herein, take a promising SF₆ replacing gas trifluoromethyl sulfonyl fluoride (CF₃SO₂F) for example, one strategy to theoretically evaluate the gas-solid compatibility between insulation gas and the typical solid surfaces of common equipment was raised. Firstly, the active site where the CF₃SO₂F molecule is prone to interact with other compounds was identified. Secondly, the interaction strength and charge transfer between CF₃SO₂F and four typical solid surfaces of equipment were studied by first-principles calculations and further analysis was conducted, with SF₆ as the control group. Then, the dynamic compatibility of CF₃SO₂F with solid surfaces was investigated by large-scale molecular dynamics simulations with the aid of deep learning. The results indicate that CF₃SO₂F has excellent compatibility similar to SF₆, especially in the equipment whose contact surface is Cu, CuO, and Al₂O₃ due to their similar outermost orbital electronic structures. Besides, the dynamic compatibility with pure Al surfaces is poor. Finally, preliminary experimental verifications indicate the validity of the strategy.

Electrical and thermal characterisation of liquid metal thin-film Ga[Formula: see text]O[Formula: see text]-SiO[Formula: see text] heterostructures

Heterostructures of Ga[Formula: see text]O[Formula: see text] with other materials such as Si, SiC or diamond, are a possible way of addressing the low thermal conductivity and lack of p-type doping of Ga[Formula: see text]O[Formula: see text] for device applications, as well as of improving device reliability. In this work we study the electrical and thermal properties of Ga[Formula: see text]O[Formula: see text]-SiO[Formula: see text] heterostructures. Here, thin-film gallium oxide with thickness ranging between 8 and 30 nm was deposited onto a silicon substrate with a thermal oxide by means of oxidised liquid gallium layer delamination. The resulting heterostructure is then characterised by means of X-ray photoelectron spectroscopy and transient thermoreflectance. The thin-film gallium oxide valence band offset with respect to the SiO[Formula: see text] is measured as 0.1 eV and predicted as [Formula: see text] eV with respect to diamond. The thin-film's out-of-plane thermal conductivity is determined to be 3 ±0.5 Wm[Formula: see text] K[Formula: see text], which is higher than what has been previously measured for other polycrystalline Ga[Formula: see text]O[Formula: see text] films of comparable thickness.

Quantum transport of sub-5 nm InSe and In2SSe monolayers and their heterostructure transistors

The emerging two-dimensional (2D) semiconductors hold a promising prospect for sustaining Moore's law benefitting from the excellent device electrostatics with narrowed channel length. Here, the performance limits of sub-5 nm InSe and In₂SSe metal-oxide-semiconductor field-effect transistors (MOSFETs) are explored by ab initio quantum transport simulations. The van der Waals heterostructures prepared by assembling different two-dimensional materials have emerged as a new design of artificial materials with promising physical properties. In this study, device performance was investigated utilizing InSe/In₂SSe van der Waals heterostructure as the channel material. Both the monolayer and heterostructure devices can scale Moore's law down to 5 nm. A heterostructure transistor exhibits a higher on-state current and faster switching speed compared with isolated monolayer transistors. This work proves that the sub-5 nm InSe/In₂SSe MOSFET can satisfy both the low power and high-performance requirements for the international technology roadmap for semiconductors in the next decade and can provide a feasible approach for enhancing device performance.

Anisotropic dependence of radiation from excitons in Ga2O3/MoS2 heterostructure

The anisotropic dependence of radiation arising from exciton recombination in the Ga₂O₃/MoS₂ heterostructure is investigated, using density functional theory and the Bethe-Salpeter equation. The wurtzite (WZ) and zinc blende (ZB) structures of the Ga₂O₃ monolayer with ferroelectric (FE) properties are assembled with a MoS₂ monolayer. Projected band structure, charge transfer and life time of excitons are discussed, to analyze which transition may be important to the creation of excitons from the electron-hole pair. A general formula of the angle-dependent intensities of radiation is derived. The characteristics of angle-dependent intensities that are closely related to the dipole moment of excitons are discussed, from the viewpoint of in-plane and out-of-plane polarizations. These predictions on radiation of the Ga₂O₃/MoS₂ heterostructure should guide exciton dynamics in low dimensional systems and rational design of optoelectronic devices.

Gallium Oxide for Gas Sensor Applications: A Comprehensive Review

Ga₂O₃ has emerged as a promising ultrawide bandgap semiconductor for numerous device applications owing to its excellent material properties. In this paper, we present a comprehensive review on major advances achieved over the past thirty years in the field of Ga₂O₃-based gas sensors. We begin with a brief introduction of the polymorphs and basic electric properties of Ga₂O₃. Next, we provide an overview of the typical preparation methods for the fabrication of Ga₂O₃-sensing material developed so far. Then, we will concentrate our discussion on the state-of-the-art Ga₂O₃-based gas sensor devices and put an emphasis on seven sophisticated strategies to improve their gas-sensing performance in terms of material engineering and device optimization. Finally, we give some concluding remarks and put forward some suggestions, including (i) construction of hybrid structures with two-dimensional materials and organic polymers, (ii) combination with density functional theoretical calculations and machine learning, and (iii) development of optical sensors using the characteristic optical spectra for the future development of novel Ga₂O₃-based gas sensors.

Novel Janus MoSiGeN4 nanosheet: adsorption behaviour and sensing performance for NO and NO2 gas molecules

A novel Janus MoSiGeN4 nanosheet is proposed for detecting poisonous gas molecules. Herein, the adsorption behaviour and sensing performance of both sides of the MoSiGeN4 monolayer to NO and NO2 gas molecules were investigated by first-principles calculations. Firstly, it is found that the MoSiGeN4 monolayer exhibits structural stability and indirect gap semiconductor characteristics. The largest adsorption energy of NO2 molecules on the MoSiGeN4 monolayer is -0.24 eV, which is higher than the -0.13 eV for NO molecules. Of course, the physisorption between gas molecules and the MoSiGeN4 monolayer appears with slight charge transfer. It is confirmed that NO molecules and NO2 molecules act as electron donors and electron acceptors, respectively. Meanwhile, the generation of small band gaps and impurity levels in the electronic structures after gas adsorption is in favour of the enhancement of electronic conductivity. Furthermore, the longest recovery times of NO and NO2 molecules are predicted to be 0.15 and 10.67 ns at room temperature, and the lateral diffusion at the surface requires crossing a large energy barrier. These findings provide indisputable evidence for further design and fabrication of highly sensitive gas sensors based on the MoSiGeN4 monolayer.

Designing doping strategy in arsenene monolayer for spintronic and optoelectronic applications: a case study of germanium and nitrogen as dopants

In this work, the structural, electronic, and magnetic properties of arsenene monolayer doped with germanium (Ge) and nitrogen (N) atoms are investigated using density functional theory calculations. Pristine monolayer is dynamically stable and it possesses a wide indirect band gap. Ge doping induces magnetic semiconductor (MS) nature generated by the semiconductor behavior in both spin channels with significant spin asymmetry around the Fermi level. The dopant produces mainly magnetic properties. Upon increasing the doping concentration, different doping configurations along armchair, zigzag edges, and hexagonal ring have been proposed. The MS nature is retained with an odd number of Ge atoms, meanwhile an eVen number leads to the disappearance of magnetism. In contrast, N doping induces a gap reduction of 11.80%, preserving the non-magnetic nature. At higher doping level, different electronic features including semiconductor, nearly semimetallic, and metallic natures are obtained depending on the doping concentration and configurations. In addition, the formation energy and cohesive energy are calculated to analyze the systems' stability. Our results show that different doping arrangements induce novel features in arsenene monolayer for applications in spintronic and optoelectronic devices.

Highly sensitive and low-power consumption metalloporphyrin-based junctions for COx detection with excellent recovery

The development of cost-effective and eco-friendly sensor materials is needed to realize the application of detectors in daily life-such as in the internet of things. In this regard, monitoring air pollutants such as carbon monoxide (CO) and carbon dioxide (CO₂), mainly emitted by anthropogenic sources from daily human activities, is of great importance. In particular, developing a susceptible and portable CO₂ sensor raises a dilemma because of the chemical inertness and non-polarity of CO₂ molecules. We find that porphyrin-based materials, exploited by nature in biological systems, are a playground to search for such sensor materials. Using density functional non-equilibrium Green's function formalism, we fully screen all 3d metalloporphyrin (MPor) based devices to find efficient CO and CO₂ gas sensors. Our detailed analysis of the adsorption energy, molecular orbitals, transmission spectra, sensitivity, and recovery time reveals that the nature of central M alters the efficiency of MPor gas detectors. We find that CO and CO₂ can be monitored using, respectively, CoPor- and TiPor-based devices. The estimated sensitivity is around 100%, along with a fast recovery time at very low bias voltages (V ≥ 0.5 V), which turn metalloporphyrins into promising candidates for the widespread development of enhanced CO and CO₂ sensors awaiting further experimental validations.

Predicting the Raman spectra of ferroelectric phases in two-dimensional Ga2O3 monolayer

We investigate the vibrational properties and Raman spectra of the two-dimensional Ga₂O₃ monolayer, using density functional theory. Two ferroelectric (FE) phases of the Ga₂O₃ monolayer with wurtzite (WZ) and zinc blende (ZB) structures (FE-WZ and FE-ZB, respectively) are considered. The Raman tensor and angle-dependent Raman intensities of two major Raman peaks (A11 and A21) in both FE-WZ (497, and 779 cm^-1) and FE-ZB (481, and 772 cm^-1) Ga₂O₃ monolayers, are calculated for the polarization of scattered light, parallel and perpendicular to that of the incident light. The characteristics of angle-dependent Raman intensities are analyzed. The average non-resonant Raman spectra of the minor peaks in FE-WZ (E¹) and FE-BZ (E¹ and E²) are compared with those of major peaks A11 and A21. These predictions of the Raman spectra of the Ga₂O₃ monolayer may guide the rational design of two-dimensional optical devices.

Two-dimensional ferroelectric MoS2/Ga2O3 heterogeneous bilayers with highly tunable photocatalytic and electrical properties

Two-dimensional van der Waals heterostructures with strong intrinsic ferroelectrics are highly promising for novel devices with designed electronic properties. The polarization reversal transition of the 2D ferroelectric Ga₂O₃ monolayer offers a new approach to tune the photocatalytic and electrical properties of MoS₂/Ga₂O₃ heterogeneous bilayers. In this work, we study MoS₂/Ga₂O₃ heterogeneous bilayers with different intrinsic polarization using hybrid-functional calculations. We closely investigate the structural, electronic and optical properties of two stable stacking configurations with opposite polarization. The results reveal a distinct switch from type-I to type-II heterostructures owing to polarization reversal transition of the 2D ferroelectric Ga₂O₃ monolayer. Biaxial strain engineering leads to type-I-to-II and type-II-to-III transitions in the two polarized models, respectively. Intriguingly, one of the MoS₂/Ga₂O₃ heterolayers has a larger spatial separation of the valence and conduction band edges and excellent optical absorption ranging from infrared to ultraviolet region under biaxial strain, thus ensuring promising novel applications such as flexible electrical and optical devices. Based on the highly tunable physical properties of the bilayer heterostructures, we further explore their potential applications, such as photocatalytic water splitting and field-controlled switch channel in MOSFET devices.

Novel Janus GaInX3 (X = S, Se, Te) single-layers: first-principles prediction on structural, electronic, and transport properties

In this paper, the structural, electronic, and transport properties of Janus GaInX3 (X = S, Se, Te) single-layers are investigated by a first-principles calculations. All three structures of GaInX3 are examined to be stable based on the analysis of their phonon dispersions, cohesive energy, and Born's criteria for mechanical stability. At the ground state, The Janus GaInX3 is a semiconductor in which its bandgap decreases as the chalcogen element X moves from S to Te. Due to the vertical asymmetric structure, a difference in the vacuum level between the two surfaces of GaInX3 is found, leading to work functions on the two sides being different. The Janus GaInX3 exhibit high directional isotropic transport characteristics. Particularly, GaInX3 single-layers have high electron mobility, which could make them potential materials for applications in electronic nanodevices.

Large-Sized Nanocrystalline Ultrathin β-Ga2O3 Membranes Fabricated by Surface Charge Lithography

Large-sized 2D semiconductor materials have gained significant attention for their fascinating properties in various applications. In this work, we demonstrate the fabrication of nanoperforated ultrathin β-Ga₂O₃ membranes of a nanoscale thickness. The technological route includes the fabrication of GaN membranes using the Surface Charge Lithography (SCL) approach and subsequent thermal treatment in air at 900 °C in order to obtain β-Ga₂O₃ membranes. The as-grown GaN membranes were discovered to be completely transformed into β-Ga₂O₃, with the morphology evolving from a smooth topography to a nanoperforated surface consisting of nanograin structures. The oxidation mechanism of the membrane was investigated under different annealing conditions followed by XPS, AFM, Raman and TEM analyses.