Spatiotemporal Imaging of Thickness-Induced Band-Bending Junctions

Real-space imaging of photo-generated surface carrier transport in 2D perovskites

In layered two-dimensional (2D) perovskites, the inorganic perovskite layers sandwiched between cation spacers create quantum well (QW) structures, showing large exciton binding energies that hinder the efficient dissociation of excitons into free carriers. This leads to poor carrier transport properties and low-performance light-conversion-based devices, and the direct understanding of the underlying physics, particularly concerning surface states, remains extremely difficult, if not impossible, due to the challenges in real-time accessibility. Here, we utilized four-dimensional scanning ultrafast electron microscopy (4D-SUEM), a highly sensitive technique for mapping surface carrier diffusion that diverges from those in the bulk and substantially affects material properties. We directly visualize photo-generated carrier transport over both spatial and temporal dimensions on the top surface of 2D perovskites with varying inorganic perovskite layer thicknesses (n = 1, 2, and 3). The results reveal the photo-induced surface carrier diffusion rates of ~30 cm2·s-1 for n = 1, ~180 cm2·s-1 for n = 2, and ~470 cm2·s-1 for n = 3, which are over 20 times larger than bulk. This is because charge carrier transmission channels have much wider distributions on the top surface compared to the bulk, as supported by the Density Functional Theory (DFT) calculations. Finally, our findings represent the demonstration to directly correlate the discrepancies between surface and bulk carrier diffusion behaviors, their relationship with exciton binding energy, and the number of layers in 2D perovskites, providing valuable insights into enhancing the performance of 2D perovskite-based optoelectronic devices through interface engineering.

Nature of the carrier dynamics and contrast formation on the photoactive material surfaces: Insight from ultrafast imaging to DFT calculations

Precise material design and surface engineering play a crucial role in enhancing the performance of optoelectronic devices. These efforts are undertaken to particularly control the optoelectronic properties and regulate charge carrier dynamics at the surface and interface. In this study, we used ultrafast scanning electron microscopy (USEM), which is a powerful and highly sensitive surface tool that provides unique information about the photoactive charge dynamics of material surfaces selectively and spontaneously in real time and space in high spatial and temporal resolution. Here, time-resolved images of CdTe (110), CdSe (100), GaAs (110), and other semiconductors revealed that the presence of oxide layers on the surface of materials leads to an increase in the work function (WF) and trap state densities upon optical excitation, leading to the formation of dark image contrast in USEM experiments. These findings were further supported by ab initio calculations, which confirmed the reliability of the observed changes in the excited surface WFs. Besides enhancing our understanding of surface charge dynamics, it also offers valuable insights into manipulating these properties. This study paves the way for precise control and the potential to design highly efficient light-harvesting devices.

Imaging hot photocarrier transfer across a semiconductor heterojunction with ultrafast electron microscopy

Semiconductor heterojunctions have gained significant attention for efficient optoelectronic devices owing to their unique interfaces and synergistic effects. Interaction between charge carriers with the heterojunction plays a crucial role in determining device performance, while its spatial-temporal mapping remains lacking. In this study, we employ scanning ultrafast electron microscopy (SUEM), an emerging technique that combines high spatial-temporal resolution and surface sensitivity, to investigate photocarrier dynamics across a Si/Ge heterojunction. Charge dynamics are selectively examined across the junction and compared to far bulk areas, through which the impact of the built-in potential, band offsets, and surface effects is directly visualized. In particular, we find that the heterojunction drastically modifies the hot photocarrier diffusivities in both Si and Ge regions due to charge trapping. These findings are further elucidated with insights from the band structure and surface potential measured by complementary techniques. This work demonstrates the tremendous effect of heterointerfaces on hot photocarrier dynamics and showcases the potential of SUEM in characterizing realistic optoelectronic devices.

Mapping Surface-Defect and Ions Migration in Mixed-Cation Perovskite Crystals

Single crystal perovskites have garnered significant attention as potential replacements for existing absorber layer materials. Despite the extensive investigations on their photoinduced charge-carriers dynamics, most of the time-resolved techniques focus on bulk properties, neglecting surface characteristic which plays a crucial role for their optoelectronic performance. Herein, 4D ultrafast scanning electron microscopy (4D-USEM) is utilized to probing the photogenerated carrier transport at the first few nanometers, alongside density functional theory (DFT) to track both defect centers and ions migration. Two compositions of mixed cation are investigated: FA0.6MA0.4PbI3 and FA0.4MA0.6PbI3, interestingly, the former displays a longer lifetime compared to the latter due the presence of a higher surface-defect centers. DFT calculations fully support that revealing samples with higher FA content have a lower energy barrier for iodide ions to migrate from the bulk to top layer, assisting in passivating surface vacancies, and a higher energy diffusion barrier to escape from surface to vacuum, resulting in fewer vacancies and longer-lived hole-electron pairs. These findings manifest the influence of cation selection on charge carrier transport and formation of defects, and emphasize the importance of understanding ion migrations role in controlling surface vacancies to assist engineering high-performance optoelectronic devices based on single crystal perovskites.

A Femtosecond Electron-Based Versatile Microscopy for Visualizing Carrier Dynamics in Semiconductors Across Spatiotemporal and Energetic Domains

Carrier dynamics detection in different dimensions (space, time, and energy) with high resolutions plays a pivotal role in the development of modern semiconductor devices, especially in low-dimensional, high-speed, and ultrasensitive devices. Here, a femtosecond electron-based versatile microscopy is reported that combines scanning ultrafast electron microscopy (SUEM) imaging and time-resolved cathodoluminescence (TRCL) detection, which allows for visualizing and decoupling different dynamic processes of carriers involved in surface and bulk in semiconductors with unprecedented spatiotemporal and energetic resolutions. The achieved spatial resolution is better than 10 nm, and the temporal resolutions for SUEM imaging and TRCL detection are ≈500 fs and ≈4.5 ps, respectively, representing state-of-the-art performance. To demonstrate its unique capability, the surface and bulk carrier dynamics involved in n-type gallium arsenide (GaAs) are directly tracked and distinguished. It is revealed, in real time and space, that hot carrier cooling, defect trapping, and interband-/defect-assisted radiative recombination in the energy domain result in ordinal super-diffusion, localization, and sub-diffusion of carriers at the surface, elucidating the crucial role of surface states on carrier dynamics. The study not only gives a comprehensive physical picture of carrier dynamics in GaAs, but also provides a powerful platform for exploring complex carrier dynamics in semiconductors for promoting their device performance.

Pristine PN junction toward atomic layer devices

In semiconductor manufacturing, PN junction is formed by introducing dopants to activate neighboring electron and hole conductance. To avoid structural distortion and failure, it generally requires the foreign dopants localize in the designated micro-areas. This, however, is challenging due to an inevitable interdiffusion process. Here we report a brand-new junction architecture, called "layer PN junction", that might break through such limit and help redefine the semiconductor device architecture. Different from all existing semiconductors, we find that a variety of van der Waals materials are doping themselves from n- to p-type conductance with an increasing/decreasing layer-number. It means the capability of constructing homogeneous PN junctions in monolayers' dimension/precision, with record high rectification-ratio (>10⁵) and low cut-off current (<1 pA). More importantly, it spawns intriguing functionalities, like gate-switchable-rectification and noise-signal decoupled avalanching. Findings disclosed here might open up a path to develop novel nanodevice applications, where the geometrical size becomes the only critical factor in tuning charge-carrier distribution and thus functionality.

Transient Strain-Induced Electronic Structure Modulation in a Semiconducting Polymer Imaged by Scanning Ultrafast Electron Microscopy

Understanding the optoelectronic properties of semiconducting polymers under external strain is essential for their applications in flexible devices. Although prior studies have highlighted the impact of static and macroscopic strains, assessing the effect of a local transient deformation before structural relaxation occurs remains challenging. Here, we employ scanning ultrafast electron microscopy (SUEM) to image the dynamics of a photoinduced transient strain in the semiconducting polymer poly(3-hexylthiophene) (P3HT). We observe that the photoinduced SUEM contrast, corresponding to the local change of secondary electron emission, exhibits an unusual ring-shaped profile. We attribute the observation to the electronic structure modulation of P3HT caused by a photoinduced strain field owing to its low modulus and strong electron-lattice coupling, supported by a finite-element analysis. Our work provides insights into tailoring optoelectronic properties using transient mechanical deformation in semiconducting polymers and demonstrates the versatility of SUEM to study photophysical processes in diverse materials.

Reversing the Polarity of MoS2 with PTFE

Pristine monolayer molybdenum disulfide (MoS₂) demonstrates predominant and persistent n-type semiconducting polarity due to the natural sulfur vacancy, which hinders its electronic and optoelectronic applications in the rich bipolarity area of semiconductors. Current doping strategies in single-layer MoS₂ are either too mild to reverse the heavily n-doped polarity or too volatile to create a robust electronic device meeting the requirements of both a long lifetime and compatibility for mass production. Herein, we demonstrate that MoS₂ can be transferred onto polytetrafluoroethylene (PTFE), one of the most electronegative substrates. After transfer, the MoS₂ photoluminescence exhibits an obvious blueshift from 1.83 to 1.89 eV and a prolonged lifetime, from 0.13 to 3.19 ns. The Fermi level of MoS₂ experiences a remarkable 510 meV decrease, transforming its electronic structure into that of a hole-rich p-type semiconductor. Our work reveals a strong p-doping effect and charge transfer between MoS₂ and PTFE, shedding light on a new nonvolatile strategy to fabricate p-type MoS₂ devices.