A New Approach to Designing High-Sensitivity Low-Dimensional Photodetectors

Filter-Free UV Photodetectors Based on Unipolar Barrier Van der Waals α-In2Se3/h-BN Heterostructures

Visible-blind ultraviolet (UV) light detection has a wide application range in scenes like space environment monitoring and medical imaging. To realize miniaturized UV detectors with high performance and high integration ability, new device structures without bulky light filters need to be developed based on advanced mechanisms. Here the unipolar barrier van der Waals heterostructure (UB-vdWH) photodetector is reported that realizes filter-free visible-blind UV detection with good stability, robustness, selectivity, and high detection performance. The UB-vdWH shows a responsivity of 2452 A W-1, a photo on-off ratio of 2.94 × 105 and a detectivity of 1.26 × 1015 Jones as a UV detector, owing to the intentionally designed barrier height that suppresses dark current and photoresponse to visible light during the transport process. The good performance remains intact during 104 test cycles or even under high temperatures, which proves the stability, and robustness of the UB-vdWH, thus shows the huge potential for a wider application range.

From Material to Cameras: Low-Dimensional Photodetector Arrays on CMOS

The last two decades have witnessed a dramatic increase in research on low-dimensional material with exceptional optoelectronic properties. While low-dimensional materials offer exciting new opportunities for imaging, their integration in practical applications has been slow. In fact, most existing reports are based on single-pixel devices that cannot rival the quantity and quality of information provided by massively parallelized mega-pixel imagers based on complementary metal-oxide semiconductor (CMOS) readout electronics. The first goal of this review is to present new opportunities in producing high-resolution cameras using these new materials. New photodetection methods and materials in the field are presented, and the challenges involved in their integration on CMOS chips for making high-resolution cameras are discussed. Practical approaches are then presented to address these challenges and methods to integrate low-dimensional material on CMOS. It is also shown that such integrations could be used for ultra-low noise and massively parallel testing of new material and devices. The second goal of this review is to present the colossal untapped potential of low-dimensional material in enabling the next-generation of low-cost and high-performance cameras. It is proposed that low-dimensional materials have the natural ability to create excellent bio-inspired artificial imaging systems with unique features such as in-pixel computing, multi-band imaging, and curved retinas.

Incorporating Photochromic Viologen Derivative to Unprecedentedly Boost UV Sensitivity in Photoelectrochromic Hydrogel

Developing ultraviolet (UV) radiation sensors featuring high sensitivity, ease of operation, and rapid readout is highly desired in diverse fields. However, the strategies to enhance sensitivity of UV detection remain limited particularly for photochromic materials, which show colorimetric response toward UV irradiation. Guided by our initial goal of facilitating easier handling, we formulated a viologen derivative ([H₂L]-SC) incorporating hydrogel-based UV sensor which not only inherits the photochromism of [H₂L]-SC but also engenders an unprecedented reversible photoelectrochromic response that is absent in either [H₂L]-SC or hydrogel alone. Judicious synergy between photochromic [H₂L]-SC and polyacrylamide (PAM) converts the colorimetric response of [H₂L]-SC into the electrical resistance change of [H₂L]-SC@PAM, which amplifies the UV sensitivity of [H₂L]-SC by 2 orders of magnitude. Explicitly, the limit of detection (LOD) for UV decreases from 296.3 mJ/cm² based on the UV-vis absorption spectra of [H₂L]-SC to 2.83 mJ/cm² derived from the resistance variation of [H₂L]-SC@PAM. Moreover, linear correlation between the resistance reduction rate of [H₂L]-SC@PAM and UV dose rate can be established, rendering it as a dual platform for quantifying both the accumulated UV dose and the instant dose rate. In addition, the proposed strategy based on constructing photoelectrochromic hybrids offers a new pathway to boost the UV sensitivity that could be universal for other photochromic materials.

Vertical Barrier Heterostructures for Reliable, Robust, and High-Performance Ultraviolet Detection

Photodetectors based on low-dimensional materials usually suffer from serious optical power-dependent photoresponse and low reliability, particularly in the ultraviolet regime. The barrier photodetector is an effective and reliable strategy where the barrier layer can block the low-energy charge carriers while allowing for a flow of the high-energy photocarriers. Here, vertical barrier heterostructure photodetectors (VBHPs), consisting of a graphene bottom electrode, a MoS₂ light absorber, and an h-BN energy barrier, for reliable, robust, and high-performance ultraviolet detection are reported. The asymmetric barrier distribution in the conduction/valence band at the MoS₂ /h-BN interface results in an ultralow noise current of 1.69 × 10^-15 A Hz^-1/2 at room temperature, stable photo on/off states exceeding 10⁴ cycles at 300 K and 400 K, a light power-independent high responsivity of 416.2 mA W^-1 at 360 nm, a high photo on-off ratio of 1.2 × 10⁵ at 360 nm, high measured detectivities (3.2 × 10¹⁰ Jones at 266 nm and 9.9 × 10¹⁰ Jones at 360 nm), and wide linear dynamic ranges. The VBHPs show a high potential for new-type reliable ultraviolet detection.

Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

Hybrid integration of van der Waals materials on a photonic platform enables diverse exploration of novel active functions and significant improvement in device performance for next-generation integrated photonic circuits, but developing waveguide-integrated photodetectors based on conventionally investigated transition metal dichalcogenide materials at the full optical telecommunication bands and mid-infrared range is still a challenge. Here, we integrate PdSe₂ with silicon waveguide for on-chip photodetection with a high responsivity from 1260 to 1565 nm, a low noise-equivalent power of 4.0 pW·Hz^-0.5, a 3-dB bandwidth of 1.5 GHz, and a measured data rate of 2.5 Gbit·s^-1. The achieved PdSe₂ photodetectors provide new insights to explore the integration of novel van der Waals materials with integrated photonic platforms and exhibit great potential for diverse applications over a broad infrared range of wavelengths, such as on-chip sensing and spectroscopy.

All-Printed Ultrahigh-Responsivity MoS2 Nanosheet Photodetectors Enabled by Megasonic Exfoliation

Printed 2D materials, derived from solution-processed inks, offer scalable and cost-effective routes to mechanically flexible optoelectronics. With micrometer-scale control and broad processing latitude, aerosol-jet printing (AJP) is of particular interest for all-printed circuits and systems. Here, AJP is utilized to achieve ultrahigh-responsivity photodetectors consisting of well-aligned, percolating networks of semiconducting MoS₂ nanosheets and graphene electrodes on flexible polyimide substrates. Ultrathin (≈1.2 nm thick) and high-aspect-ratio (≈1 μm lateral size) MoS₂ nanosheets are obtained by electrochemical intercalation followed by megasonic atomization during AJP, which not only aerosolizes the inks but also further exfoliates the nanosheets. The incorporation of the high-boiling-point solvent terpineol into the MoS₂ ink is critical for achieving a highly aligned and flat thin-film morphology following AJP as confirmed by grazing-incidence wide-angle X-ray scattering and atomic force microscopy. Following AJP, curing is achieved with photonic annealing, which yields quasi-ohmic contacts and photoactive channels with responsivities exceeding 10³  A W^-1 that outperform previously reported all-printed visible-light photodetectors by over three orders of magnitude. Megasonic exfoliation coupled with properly designed AJP ink formulations enables the superlative optoelectronic properties of ultrathin MoS₂ nanosheets to be preserved and exploited for the scalable additive manufacturing of mechanically flexible optoelectronics.

Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS2 Heterojunctions

The incapability of modulating the photoresponse of assembled heterostructure devices has remained a challenge for the development of optoelectronics with multifunctionality. Here, a gate-tunable and anti-ambipolar phototransistor is reported based on 1D GaAsSb nanowire/2D MoS₂ nanoflake mixed-dimensional van der Waals heterojunctions. The resulting heterojunction shows apparently asymmetric control over the anti-ambipolar transfer characteristics, possessing potential to implement electronic functions in logic circuits. Meanwhile, such an anti-ambipolar device allows the synchronous adjustment of band slope and depletion regions by gating in both components, thereby giving rise to the gate-tunability of the photoresponse. Coupled with the synergistic effect of the materials in different dimensionality, the hybrid heterojunction can be readily modulated by the external gate to achieve a high-performance photodetector exhibiting a large on/off current ratio of 4 × 10⁴, fast response of 50 μs, and high detectivity of 1.64 × 10¹¹ Jones. Due to the formation of type-II band alignment and strong interfacial coupling, a prominent photovoltaic response is explored in the heterojunction as well. Finally, a visible image sensor based on this hybrid device is demonstrated with good imaging capability, suggesting the promising application prospect in future optoelectronic systems.