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Yang Y, Zhou Y, Tang Z, Liu Y, Quan W, Zhou J, Li X, Xi X, Gong Q, Zhang L, Zhao Y. Unusual Thermal Transport in Few-Layer Van der Waals Antiferromagnet CrOCl. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2025:e2502440. [PMID: 40277590 DOI: 10.1002/advs.202502440] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/08/2025] [Revised: 03/24/2025] [Indexed: 04/26/2025]
Abstract
Few-layer van der Waals magnets are exceptional candidates for investigating the fundamental spin behaviors and advancing the development of next-generation ultra-compact spintronic devices. While the intrinsic long-range magnetic order is well-established in the monolayer limit, the thermal transport behavior involving magnons, phonons, and magnetophonon polarons near the phase transition remains largely unexplored. In this work, the thermal transport behavior is probed near the phase transitions from bulk to the monolayer limit by using a differential suspended thermal bridge method, which provides an ultra-sensitive temperature and thermal conductance measurement enhanced by the double Wheatstone bridge. In the few-layer CrOCl flake, a stronger magnon-phonon coupling is observed compared to the bulk, resulting in a shift in the thermal transport behavior from a dip to a peak shape around the Néel temperature. Additionally, below the Néel temperature, the few-layer CrOCl significantly enhances the interfacial thermal conductance between the metal electrode and insulator substrate, potentially leading to the substantial improvements in the heat dissipation in Si-based semiconductor devices. This study introduces a novel method and strategy for probing the fundamental magnetic phase transition behavior and lays a solid foundation for the potential application of van der Waals magnets in the electronic devices.
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Affiliation(s)
- Yu Yang
- Phonon Engineering Research Center of Jiangsu Province, Ministry of Education Key Laboratory of NSLSCS, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China
| | - Yan Zhou
- Phonon Engineering Research Center of Jiangsu Province, Ministry of Education Key Laboratory of NSLSCS, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China
| | - Ziming Tang
- College of Physics and State Key Lab of Mechanics and Control for Aerospace Structures and Key Lab for Intelligent Nano Materials and Devices of Ministry of Education and College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing, 210016, China
| | - Yulu Liu
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, 210093, China
| | - Weimin Quan
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Jun Zhou
- Phonon Engineering Research Center of Jiangsu Province, Ministry of Education Key Laboratory of NSLSCS, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China
| | - Xiaokang Li
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xiaoxiang Xi
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, 210093, China
| | - Qihua Gong
- College of Physics and State Key Lab of Mechanics and Control for Aerospace Structures and Key Lab for Intelligent Nano Materials and Devices of Ministry of Education and College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing, 210016, China
| | - Lifa Zhang
- Phonon Engineering Research Center of Jiangsu Province, Ministry of Education Key Laboratory of NSLSCS, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China
| | - Yunshan Zhao
- Phonon Engineering Research Center of Jiangsu Province, Ministry of Education Key Laboratory of NSLSCS, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China
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2
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Dey K, Khatun H, Ghosh A, Das S, Das B, Datta S. Magnetodielectric properties in two dimensional magnetic insulators. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2025; 37:163003. [PMID: 39983309 DOI: 10.1088/1361-648x/adb923] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2024] [Accepted: 02/21/2025] [Indexed: 02/23/2025]
Abstract
Magnetodielectric (MD) materials are important for their ability to spin-charge conversion, magnetic field control of electric polarization and vice versa. Among these, two-dimensional (2D) van der Waals (vdW) magnetic materials are of particular interest due to the presence of magnetic anisotropy (MA) originating from the interaction between the magnetic moments and the crystal field. Also, these materials indicate a high degree of stability in the long-range spin order and may be described using suitable spin Hamiltonians of the Heisenberg, XY, or Ising type. Recent reports have suggested effective interactions between magnetization and electric polarization in 2D magnets. However, MD coupling studies on layered magnetic materials are still few. This review covers the fundamentals of MD coupling by explaining related key terms. It includes the necessary conditions for having this coupling and sheds light on the possible microscopic mechanisms behind this coupling starting from phenomenological descriptions. Apart from that, this review classifies 2D magnetic materials into several categories for reaching out each and every class of materials. Additionally, this review summarizes recent advancements of some pioneer 2D MD materials. Last but not the least, the current review provides possible research directions for enhancing MD coupling in those and mentions the possibilities for future developments.
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Affiliation(s)
- Koushik Dey
- Technical Research Center (TRC), Indian Association for the Cultivation of Science (IACS), Jadavpur, Kolkata 700032, India
- School of Physical Sciences, Indian Association for the Cultivation of Science (IACS), Jadavpur, Kolkata 700032, India
| | - Hasina Khatun
- School of Physical Sciences, Indian Association for the Cultivation of Science (IACS), Jadavpur, Kolkata 700032, India
| | - Anudeepa Ghosh
- School of Physical Sciences, Indian Association for the Cultivation of Science (IACS), Jadavpur, Kolkata 700032, India
- Indian Institute of Science Education and Research Kolkata, Mohanpur, Nadia 741246, West Bengal, India
| | - Soumik Das
- School of Physical Sciences, Indian Association for the Cultivation of Science (IACS), Jadavpur, Kolkata 700032, India
| | - Bikash Das
- School of Physical Sciences, Indian Association for the Cultivation of Science (IACS), Jadavpur, Kolkata 700032, India
| | - Subhadeep Datta
- School of Physical Sciences, Indian Association for the Cultivation of Science (IACS), Jadavpur, Kolkata 700032, India
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Tang Y, Ping Y, Yang X, Xing J, Chen J, Wang X, Lu J, Jing H, Liu K, Wu J, Zhou X, Zhai T, Xu H. Synthesis of Highly Anisotropic 2D Insulator CrOCl Nanosheets for Interfacial Symmetry Breaking in Isotropic 2D Semiconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2405358. [PMID: 39659084 DOI: 10.1002/adma.202405358] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2024] [Revised: 11/21/2024] [Indexed: 12/12/2024]
Abstract
Chromium oxychloride (CrOCl), a van der Waals antiferromagnetic insulator, has attracted significant interest in 2D optoelectronic, ferromagnetic, and quantum devices. However, the bottom-up preparation of 2D CrOCl remains challenging, limiting its property exploration and device application. Herein, the controllable synthesis of 2D CrOCl crystals by chemical vapor deposition is demonstrated. The combination reaction of precursors together with the space-confined growth strategy, providing stable and stoichiometric growth conditions, enable a robust synthesis of high-crystallinity CrOCl nanosheets with regular rhombus-like morphology and uniform thickness. By tuning the growth temperature from 675 to 800 °C, the thickness of CrOCl nanosheets can be continuously modulated from 10.2 to 30.8 nm, with the domain size increasing from 16.9 to 25.5 µm. The as-grown CrOCl nanosheets exhibit significant structural/optical anisotropy, ultrahigh insulativity, and superior air stability. Furthermore, a MoS2/CrOCl heterostructure with single-mirror symmetry stacking and ultrastrong interfacial coupling is built to realize interfacial symmetry breaking, a novel interface phenomenon that converts MoS2 from isotropy to anisotropy. Consequently, the MoS2/CrOCl heterostructure device achieves polarization-sensitive photodetection and bulk photovoltaic effect, which are nonexistent in high-symmetry 2D materials. This work paves the way for the future exploration of CrOCl-based 2D physics and devices via symmetry engineering.
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Affiliation(s)
- Yue Tang
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Yue Ping
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Xiaoxin Yang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Jiabao Xing
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Jiabiao Chen
- School of Materials Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Xiao Wang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Jiangbo Lu
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Hongmei Jing
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Kaiqiang Liu
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Jinxiong Wu
- School of Materials Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Xing Zhou
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
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Cao S, Zheng R, Wang C, Ma N, Chen M, Song Y, Feng Y, Hao T, Zhang Y, Wang Y, Gu P, Watanabe K, Taniguchi T, Liu Y, Xie XC, Ji W, Ye Y, Han Z, Chen JH. Magnetic-Electrical Synergetic Control of Non-Volatile States in Bilayer Graphene-CrOCl Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2411300. [PMID: 39610203 DOI: 10.1002/adma.202411300] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2024] [Revised: 11/15/2024] [Indexed: 11/30/2024]
Abstract
Anti-ferromagnetic insulator chromium oxychloride (CrOCl) has shown peculiar charge transfer and correlation-enhanced emerging properties when interfaced with other van der Waals conductive channels. However, the influence of its spin states to the channel material remains largely unknown. Here, this issue is addressed by directly measuring the density of states in bilayer graphene (BLG) interfaced with CrOCl via a high-precision capacitance measurement technique and a surprising hysteretic behavior in the charging states of the heterostructure is observed. Such hysteretic behavior depends only on the history of magnetization, but not on the history of electrical gating; it can also be turned off electrically, providing a synergetic control of these non-volatile states. First-principles calculations attribute this observation to magnetic field-controlled charge transfer between BLG and CrOCl during the phase transition of CrOCl from antiferromagnetic (AFM) to ferrimagnetic-like (FiM) states. This magnetic-electrical synergetic control mechanism broadens the scope of proximity effects and opens new possibilities for the design of advanced 2D heterostructures and devices.
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Affiliation(s)
- Shimin Cao
- International Center of Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, P. R. China
| | - Runjie Zheng
- International Center of Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Cong Wang
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, School of Physics, Renmin University of China, Beijing, 100872, P. R. China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, P. R. China
| | - Ning Ma
- International Center of Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Mantang Chen
- International Center of Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Yuanjun Song
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, P. R. China
| | - Ya Feng
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, P. R. China
| | - Tingting Hao
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, P. R. China
| | - Yu Zhang
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, P. R. China
| | - Yaning Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Pingfan Gu
- School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Kenji Watanabe
- National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan
| | - Yang Liu
- International Center of Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - X C Xie
- International Center of Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, P. R. China
- Hefei National Laboratory, Hefei, 230088, P. R. China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, School of Physics, Renmin University of China, Beijing, 100872, P. R. China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, P. R. China
| | - Yu Ye
- School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Zheng Han
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan, 030006, P. R. China
| | - Jian-Hao Chen
- International Center of Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, P. R. China
- Hefei National Laboratory, Hefei, 230088, P. R. China
- Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing, 100871, P. R. China
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5
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Ding Y, He J, Zhang S, Zuo H, Gu P, Cai J, Zeng X, Yan P, Cai J, Cao K, Watanabe K, Taniguchi T, Dong P, Zhang Y, Wu Y, Zhou X, Wang J, Chen Y, Ye Y, Liu J, Li J. Constructing the Fulde-Ferrell-Larkin-Ovchinnikov State in a CrOCl/NbSe 2 van der Waals Heterostructure. NANO LETTERS 2024. [PMID: 39361493 DOI: 10.1021/acs.nanolett.4c03079] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/05/2024]
Abstract
Time reversal symmetry breaking in superconductors, resulting from external magnetic fields or spontaneous magnetization, often leads to unconventional superconducting properties. In this way, an intrinsic phenomenon called the Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state may be realized by the Zeeman effect. Here, we construct the FFLO state in an artificial CrOCl/NbSe2 van der Waals (vdW) heterostructure by utilizing the superconducting proximity effect of NbSe2 flakes. The proximity-induced superconductivity demonstrates a considerably weak gap of about 0.12 meV, and the in-plane upper critical field reveals the behavior of the FFLO state. First-principles calculations uncover the origin of the proximitized superconductivity, which indicates the importance of Cr vacancies or line defects in CrOCl. Moreover, the FFLO state could be induced by the inherent large spin splitting in CrOCl. Our findings not only provide a practical scheme for constructing the FFLO state but also inspire the discovery of an exotic FFLO state in other two-dimensional vdW heterostructures.
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Affiliation(s)
- Yifan Ding
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Jiadian He
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Shihao Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Huakun Zuo
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Pingfan Gu
- State Key Laboratory for Mesoscopic Physics, Nanooptoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, Beijing 100871, China
| | - Jiliang Cai
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Xiaohui Zeng
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Pu Yan
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Jun Cai
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Kecheng Cao
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Peng Dong
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Yiwen Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Yueshen Wu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Xiang Zhou
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Jinghui Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Yulin Chen
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
- Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, U.K
| | - Yu Ye
- State Key Laboratory for Mesoscopic Physics, Nanooptoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, Beijing 100871, China
| | - Jianpeng Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Jun Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
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Ying B, Xin B, Li M, Zhou S, Liu Q, Zhu Z, Qin S, Wang WH, Zhu M. Efficient Charge Transfer in Graphene/CrOCl Heterostructures by van der Waals Interfacial Coupling. ACS APPLIED MATERIALS & INTERFACES 2024; 16:43806-43815. [PMID: 39105741 DOI: 10.1021/acsami.4c07233] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/07/2024]
Abstract
Due to the large volume of exposed atoms and electrons at the surface of two-dimensional materials, interfacial charge coupling has been proven as an efficient strategy to engineer the electronic structures of two-dimensional materials assembled in van der Waals heterostructures. Recently, heterostructures formed by graphene stacked with CrOCl have demonstrated intriguing quantum states, including a distorted quantum Hall phase in the monolayer graphene and the unconventional correlated insulator in the bilayer graphene. Yet, the understanding of the interlayer charge coupling in the heterostructure remains challenging. Here, we demonstrate clear evidences of efficient hole doping in the interfacial-coupled graphene/CrOCl heterostructure by detailed Raman spectroscopy and electrical transport measurements. The observation of significant blue shifts and stiffness of graphene Raman modes quantitatively determines the concentration of hole injection of about 1.2 × 1013 cm-2 from CrOCl to graphene, which is highly consistent with the enhanced conductivity of graphene. First-principles calculations based on density functional theory reveal that due to the large work function difference and the electronegativity of Cl atoms in CrOCl, the electrons are efficiently transferred from graphene to CrOCl, leading to hole doping in graphene. Our findings provide clues for understanding the exotic physical properties of graphene/CrOCl heterostructures, paving the way for further engineering of quantum electronic states by efficient interfacial charge coupling in van der Waals heterostructures.
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Affiliation(s)
- Binyu Ying
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Baojuan Xin
- Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Nankai University, Tianjin 300350, China
| | - Miaomiao Li
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Siyu Zhou
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Qiang Liu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Zhihong Zhu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Shiqiao Qin
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Wei-Hua Wang
- Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Nankai University, Tianjin 300350, China
| | - Mengjian Zhu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
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Villalpando G, Xie J, Mathur N, Cheng G, Yao N, Schoop LM. Freestanding monolayer CrOCl through chemical exfoliation. NANOSCALE HORIZONS 2024. [PMID: 39092853 DOI: 10.1039/d4nh00137k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/04/2024]
Abstract
Magnetic two-dimensional (2D) materials are a unique class of quantum materials that can exhibit interesting magnetic phenomena, such as layer-dependent magnetism. The most significant barrier to 2D magnet discovery and study lies in our ability to exfoliate materials down to the monolayer limit. Therefore designing exfoliation methods that produce clean, monolayer sheets is crucial for the growth of 2D material research. In this work, we develop a facile chemical exfoliation method using lithium naphthalenide for obtaining 2D nanosheets of magnetic van der Waals material CrOCl. Using our optimized method, we obtain freestanding monolayers of CrOCl, with the thinnest measured height to date. We also provide magnetic characterization of bulk, intercalated intermediate, and nanosheet pellet CrOCl, showing that exfoliated nanosheets of CrOCl exhibit magnetic order. The results of this study highlight the tunability of the chemical exfoliation method, along with providing a simple method for obtaining 2D CrOCl.
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Affiliation(s)
| | - Jiaze Xie
- Department of Chemistry, Princeton University, Princeton, NJ 08544, USA.
| | - Nitish Mathur
- Department of Chemistry, Princeton University, Princeton, NJ 08544, USA.
| | - Guangming Cheng
- Department of Chemistry, Princeton University, Princeton, NJ 08544, USA.
| | - Nan Yao
- Princeton Materials Institute, Princeton, NJ 08544, USA
| | - Leslie M Schoop
- Department of Chemistry, Princeton University, Princeton, NJ 08544, USA.
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8
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Xiao G, Xiao WZ, Feng YX, Rong QY, Chen Q. Two-dimensional ferroelastic and ferromagnetic NiOX (X = Cl and Br) with half-metallicity and a high Curie temperature. NANOSCALE 2023; 15:17963-17971. [PMID: 37905430 DOI: 10.1039/d3nr03119e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/02/2023]
Abstract
Two-dimensional (2D) multiferroic materials with distinctive properties, such as half-metallicity, high Curie temperature (TC), and magnetoelastic coupling, hold potential applications in novel nanoscale spintronic devices, but they are rare. Using density functional theory (DFT) calculations and evolutionary algorithms, we identify new types of 2D NiOX (X = F, Cl and Br) monolayers that are stable in energy, dynamics, thermodynamics, and mechanics. Among them, NiOF is an indirect-gap antiferromagnetic (AFM) semiconductor, while NiOCl and NiOBr are half-metallic materials with ferromagnetic (FM) ordering with a TC of 671 and 692 K and in-plane magnetic anisotropy energies (MAEs) of 541 and 609 μeV per Ni along the x-axis and y-axis, respectively. Notably, ferroelasticity is another important feature of NiOCl and NiOBr monolayers with energy barriers of 234.0 and 151.5 meV per atom, respectively. Moreover, the in-plane magnetic easy axis is strongly coupled to the lattice direction. The coexistence of high ferromagnetism, ferroelasticity, half-metallicity, and magnetoelastic coupling renders NiOCl and NiOBr monolayers great potential for future nanodevices.
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Affiliation(s)
- Gang Xiao
- School of Computational Science and Electronics, Hunan Institute of Engineering, Xiangtan 411104, China.
| | - Wen-Zhi Xiao
- School of Computational Science and Electronics, Hunan Institute of Engineering, Xiangtan 411104, China.
| | - Ying-Xue Feng
- School of Computational Science and Electronics, Hunan Institute of Engineering, Xiangtan 411104, China.
| | - Qing-Yan Rong
- School of Computational Science and Electronics, Hunan Institute of Engineering, Xiangtan 411104, China.
| | - Qiao Chen
- School of Computational Science and Electronics, Hunan Institute of Engineering, Xiangtan 411104, China.
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9
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Kumari P, Rani S, Kar S, Kamalakar MV, Ray SJ. Strain-controlled spin transport in a two-dimensional (2D) nanomagnet. Sci Rep 2023; 13:16599. [PMID: 37789039 PMCID: PMC10547692 DOI: 10.1038/s41598-023-43025-w] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 09/18/2023] [Indexed: 10/05/2023] Open
Abstract
Semiconductors with controllable electronic transport coupled with magnetic behaviour, offering programmable spin arrangements present enticing potential for next generation intelligent technologies. Integrating and linking these two properties has been a long standing challenge for material researchers. Recent discoveries in two-dimensional (2D) magnet shows an ability to tune and control the electronic and magnetic phases at ambient temperature. Here, we illustrate controlled spin transport within the magnetic phase of the 2D semiconductor CrOBr and reveal a substantial connection between its magnetic order and charge carriers. First, we systematically analyse the strain-induced electronic behaviour of 2D CrOBr using density functional theory calculations. Our study demonstrates the phase transition from a magnetic semiconductor → half metal → magnetic metal in the material under strain application, creating intriguing spin-resolved conductance with 100% spin polarisation and spin-injection efficiency. Additionally, the spin-polarised current-voltage (I-V) trend displayed conductance variations with high strain-assisted tunability and a peak-to-valley ratio as well as switching efficiency. Our study reveals that CrOBr can exhibit highly anisotropic behaviour with perfect spin filtering, offering new implications for strain engineered magneto-electronic devices.
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Affiliation(s)
- P Kumari
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - S Rani
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - S Kar
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - M Venkata Kamalakar
- Department of Physics and Astronomy, Uppsala University, Box 516, 75120, Uppsala, Sweden.
| | - S J Ray
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India.
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10
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Zhang M, Hu Q, Huang Y, Hua C, Cheng M, Liu Z, Song S, Wang F, Lu H, He P, Cao GH, Xu ZA, Lu Y, Yang J, Zheng Y. Spin-Lattice Coupled Metamagnetism in Frustrated van der Waals Magnet CrOCl. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2300964. [PMID: 37066740 DOI: 10.1002/smll.202300964] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2023] [Revised: 03/29/2023] [Indexed: 06/19/2023]
Abstract
The long-range magnetic ordering in frustrated magnetic systems is stabilized by coupling magnetic moments to various degrees of freedom, for example, by enhancing magnetic anisotropy via lattice distortion. Here, the unconventional spin-lattice coupled metamagnetic properties of atomically-thin CrOCl, a van der Waals antiferromagnet with inherent magnetic frustration rooted in the staggered square lattice, are reported. Using temperature- and angle-dependent tunneling magnetoconductance (TMC), in complementary with magnetic torque and first-principles calculations, the antiferromagnetic (AFM)-to-ferrimagnetic (FiM) metamagnetic transitions (MTs) of few-layer CrOCl are revealed to be triggered by collective magnetic moment flipping rather than the established spin-flop mechanism, when external magnetic field (H) enforces a lattice reconstruction interlocked with the five-fold periodicity of the FiM phase. The spin-lattice coupled MTs are manifested by drastic jumps in TMC, which show anomalous upshifts at the transition thresholds and persist much higher above the AFM Néel temperature. While the MTs exhibit distinctive triaxial anisotropy, reflecting divergent magnetocrystalline anisotropy of the c-axis AFM ground state, the resulting FiM phase has an a-c easy plane in which the magnetization axis is freely rotated by H. At the 2D limit, such a field-tunable FiM phase may provide unique opportunities to explore exotic emergent phenomena and novel spintronics devices.
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Affiliation(s)
- Minjie Zhang
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Qifeng Hu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yuqiang Huang
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Chenqiang Hua
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Man Cheng
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Zhou Liu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Shijie Song
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Fanggui Wang
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Hengzhe Lu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Pimo He
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Guang-Han Cao
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Zhu-An Xu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yunhao Lu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Jinbo Yang
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Yi Zheng
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
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11
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Gu P, Wang C, Su D, Dong Z, Wang Q, Han Z, Watanabe K, Taniguchi T, Ji W, Sun Y, Ye Y. Multi-state data storage in a two-dimensional stripy antiferromagnet implemented by magnetoelectric effect. Nat Commun 2023; 14:3221. [PMID: 37270582 PMCID: PMC10239514 DOI: 10.1038/s41467-023-39004-4] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/27/2023] [Accepted: 05/25/2023] [Indexed: 06/05/2023] Open
Abstract
A promising approach to the next generation of low-power, functional, and energy-efficient electronics relies on novel materials with coupled magnetic and electric degrees of freedom. In particular, stripy antiferromagnets often exhibit broken crystal and magnetic symmetries, which may bring about the magnetoelectric (ME) effect and enable the manipulation of intriguing properties and functionalities by electrical means. The demand for expanding the boundaries of data storage and processing technologies has led to the development of spintronics toward two-dimensional (2D) platforms. This work reports the ME effect in the 2D stripy antiferromagnetic insulator CrOCl down to a single layer. By measuring the tunneling resistance of CrOCl on the parameter space of temperature, magnetic field, and applied voltage, we verified the ME coupling down to the 2D limit and probed its mechanism. Utilizing the multi-stable states and ME coupling at magnetic phase transitions, we realize multi-state data storage in the tunneling devices. Our work not only advances the fundamental understanding of spin-charge coupling, but also demonstrates the great potential of 2D antiferromagnetic materials to deliver devices and circuits beyond the traditional binary operations.
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Affiliation(s)
- Pingfan Gu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - Cong Wang
- Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, China
| | - Dan Su
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Beijing, China
| | - Zehao Dong
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Qiuyuan Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Zheng Han
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Taiyuan, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China
- Liaoning Academy of Materials, Shenyang, China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, China.
| | - Young Sun
- Center of Quantum Materials and Devices, and Department of Applied Physics, Chongqing University, Chongqing, China.
| | - Yu Ye
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
- Collaborative Innovation Center of Quantum Matter, Beijing, China.
- Liaoning Academy of Materials, Shenyang, China.
- Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, China.
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12
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Lu S, Guo D, Cheng Z, Guo Y, Wang C, Deng J, Bai Y, Tian C, Zhou L, Shi Y, He J, Ji W, Zhang C. Controllable dimensionality conversion between 1D and 2D CrCl 3 magnetic nanostructures. Nat Commun 2023; 14:2465. [PMID: 37117203 PMCID: PMC10147715 DOI: 10.1038/s41467-023-38175-4] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/25/2022] [Accepted: 04/19/2023] [Indexed: 04/30/2023] Open
Abstract
The fabrication of one-dimensional (1D) magnetic systems on solid surfaces, although of high fundamental interest, has yet to be achieved for a crossover between two-dimensional (2D) magnetic layers and their associated 1D spin chain systems. In this study, we report the fabrication of 1D single-unit-cell-width CrCl3 atomic wires and their stacked few-wire arrays on the surface of a van der Waals (vdW) superconductor NbSe2. Scanning tunneling microscopy/spectroscopy and first-principles calculations jointly revealed that the single wire shows an antiferromagnetic large-bandgap semiconducting state in an unexplored structure different from the well-known 2D CrCl3 phase. Competition among the total energies and nanostructure-substrate interfacial interactions of these two phases result in the appearance of the 1D phase. This phase was transformable to the 2D phase either prior to or after the growth for in situ or ex situ manipulations, in which the electronic interactions at the vdW interface play a nontrivial role that could regulate the dimensionality conversion and structural transformation between the 1D-2D CrCl3 phases.
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Affiliation(s)
- Shuangzan Lu
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Jiufengshan Laboratory, Wuhan, 430074, China
| | - Deping Guo
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing, 100872, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
| | - Zhengbo Cheng
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yanping Guo
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Cong Wang
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing, 100872, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
| | - Jinghao Deng
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yusong Bai
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Cheng Tian
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Linwei Zhou
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing, 100872, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
| | - Youguo Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jun He
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China.
| | - Wei Ji
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing, 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China.
| | - Chendong Zhang
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
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13
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Yang K, Gao X, Wang Y, Zhang T, Gao Y, Lu X, Zhang S, Liu J, Gu P, Luo Z, Zheng R, Cao S, Wang H, Sun X, Watanabe K, Taniguchi T, Li X, Zhang J, Dai X, Chen JH, Ye Y, Han Z. Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene. Nat Commun 2023; 14:2136. [PMID: 37059725 PMCID: PMC10104821 DOI: 10.1038/s41467-023-37769-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/08/2022] [Accepted: 03/30/2023] [Indexed: 04/16/2023] Open
Abstract
The realization of graphene gapped states with large on/off ratios over wide doping ranges remains challenging. Here, we investigate heterostructures based on Bernal-stacked bilayer graphene (BLG) atop few-layered CrOCl, exhibiting an over-1-GΩ-resistance insulating state in a widely accessible gate voltage range. The insulating state could be switched into a metallic state with an on/off ratio up to 107 by applying an in-plane electric field, heating, or gating. We tentatively associate the observed behavior to the formation of a surface state in CrOCl under vertical electric fields, promoting electron-electron (e-e) interactions in BLG via long-range Coulomb coupling. Consequently, at the charge neutrality point, a crossover from single particle insulating behavior to an unconventional correlated insulator is enabled, below an onset temperature. We demonstrate the application of the insulating state for the realization of a logic inverter operating at low temperatures. Our findings pave the way for future engineering of quantum electronic states based on interfacial charge coupling.
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Affiliation(s)
- Kaining Yang
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan, PR China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, PR China
| | - Xiang Gao
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan, PR China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, PR China
| | - Yaning Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Material Science and Engineering, University of Science and Technology of China, Anhui, China
| | - Tongyao Zhang
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan, PR China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, PR China
| | - Yuchen Gao
- Collaborative Innovation Center of Quantum Matter, Beijing, China
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, China
| | - Xin Lu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China.
| | - Shihao Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Jianpeng Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, China
| | - Pingfan Gu
- Collaborative Innovation Center of Quantum Matter, Beijing, China
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, China
| | - Zhaoping Luo
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Runjie Zheng
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
| | - Shimin Cao
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
- Beijing Academy of Quantum Information Sciences, Beijing, China
| | - Hanwen Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Xingdan Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Xiuyan Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Jing Zhang
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan, PR China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, PR China
| | - Xi Dai
- Materials Department, University of California, Santa Barbara, CA, USA.
- Department of Physics, The Hongkong University of Science and Technology, Hong Kong, China.
| | - Jian-Hao Chen
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China.
- Beijing Academy of Quantum Information Sciences, Beijing, China.
- Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing, China.
- Hefei National Laboratory, Hefei, China.
| | - Yu Ye
- Collaborative Innovation Center of Quantum Matter, Beijing, China.
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, China.
| | - Zheng Han
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan, PR China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, PR China.
- Liaoning Academy of Materials, Shenyang, China.
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14
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Zhang B, Yun C, Wu H, Zhao Z, Zeng Y, Liang D, Shen T, Zhang J, Huang X, Song J, Xu J, Zhang Q, Tan PH, Gao S, Hou Y. Two-Dimensional Wedge-Shaped Magnetic EuS: Insight into the Substrate Step-Guided Epitaxial Synthesis on Sapphire. J Am Chem Soc 2022; 144:19758-19769. [PMID: 36257067 DOI: 10.1021/jacs.2c06023] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Rare earth chalcogenides (RECs) with novel luminescence and magnetic properties offer fascinating opportunities for fundamental research and applications. However, controllable synthesis of RECs down to the two-dimensional (2D) limit still has a great challenge. Herein, 2D wedge-shaped ferromagnetic EuS single crystals are successfully synthesized via a facile molten-salt-assisted chemical vapor deposition method on sapphire. Based on the theoretical simulations and experimental measurements, the mechanisms of aligned growth and wedge-shaped growth are systematically proposed. The wedge-shaped growth is driven by a dual-interaction mechanism, where the coupling between EuS and the substrate steps impedes the lateral growth, and the strong bonding of nonlayered EuS itself facilitates the vertical growth. Through temperature-dependent Raman and photoluminescence characterization, the nanoflakes show a large Raman temperature coefficient of -0.030 cm-1 K-1 and uncommon increasing band gap with temperature. More importantly, by low-temperature magnetic force microscopy characterization, thickness variation of the magnetic signal is revealed within one sample, indicating the great potential of the wedge-shaped nanoflake to serve as a platform for highly efficient investigation of thickness-dependent magnetic properties. This work sheds new light on 2D RECs and will offer a deep understanding of 2D wedge-shaped materials.
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Affiliation(s)
- Biao Zhang
- School of Materials Science and Engineering, Peking University, Beijing100871, China.,Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing100871, China
| | - Chao Yun
- State Key Laboratory for Mesoscopic Physics, School of Physics, Beijing Key Laboratory for Magnetoeletric Materials and Devices, Peking University, Beijing100871, China
| | - Heng Wu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing100083, China
| | - Zijing Zhao
- School of Materials Science and Engineering, Peking University, Beijing100871, China.,Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing100871, China
| | - Yi Zeng
- School of Materials Science and Engineering, Peking University, Beijing100871, China.,Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing100871, China
| | - Dong Liang
- State Key Laboratory for Mesoscopic Physics, School of Physics, Beijing Key Laboratory for Magnetoeletric Materials and Devices, Peking University, Beijing100871, China
| | - Tong Shen
- School of Materials Science and Engineering, Peking University, Beijing100871, China.,Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing100871, China
| | - Jine Zhang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing100191, China
| | - Xiaoxiao Huang
- School of Materials Science and Engineering, Peking University, Beijing100871, China.,Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing100871, China
| | - Jiepeng Song
- School of Materials Science and Engineering, Peking University, Beijing100871, China
| | - Junjie Xu
- School of Materials Science and Engineering, Peking University, Beijing100871, China.,Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing100871, China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing100871, China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing100083, China
| | - Song Gao
- Institute of Spin-X Science and Technology, South China University of Technology, Guangzhou510641, China
| | - Yanglong Hou
- School of Materials Science and Engineering, Peking University, Beijing100871, China.,Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing100871, China
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15
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Zhang T, Wang H, Xia X, Yan N, Sha X, Huang J, Watanabe K, Taniguchi T, Zhu M, Wang L, Gao J, Liang X, Qin C, Xiao L, Sun D, Zhang J, Han Z, Li X. A monolithically sculpted van der Waals nano-opto-electro-mechanical coupler. LIGHT, SCIENCE & APPLICATIONS 2022; 11:48. [PMID: 35232973 PMCID: PMC8888553 DOI: 10.1038/s41377-022-00734-7] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/07/2021] [Revised: 01/25/2022] [Accepted: 02/08/2022] [Indexed: 06/14/2023]
Abstract
The nano-opto-electro-mechanical systems (NOEMS) are a class of hybrid solid devices that hold promises in both classical and quantum manipulations of the interplay between one or more degrees of freedom in optical, electrical and mechanical modes. To date, studies of NOEMS using van der Waals (vdW) heterostructures are very limited, although vdW materials are known for emerging phenomena such as spin, valley, and topological physics. Here, we devise a universal method to easily and robustly fabricate vdW heterostructures into an architecture that hosts opto-electro-mechanical couplings in one single device. We demonstrated several functionalities, including nano-mechanical resonator, vacuum channel diodes, and ultrafast thermo-radiator, using monolithically sculpted graphene NOEMS as a platform. Optical readout of electric and magnetic field tuning of mechanical resonance in a CrOCl/graphene vdW NOEMS is further demonstrated. Our results suggest that the introduction of the vdW heterostructure into the NOEMS family will be of particular potential for the development of novel lab-on-a-chip systems.
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Affiliation(s)
- Tongyao Zhang
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan, 030006, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, China
| | - Hanwen Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, Anhui, 230026, China
| | - Xiuxin Xia
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, Anhui, 230026, China
| | - Ning Yan
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan, 030006, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, China
| | - Xuanzhe Sha
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan, 030006, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, China
| | - Jinqiang Huang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, Anhui, 230026, China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Mengjian Zhu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
| | - Lei Wang
- The Key Laboratory of Science and Technology on Silicon Devices, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Jiantou Gao
- The Key Laboratory of Science and Technology on Silicon Devices, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
- The University of Chinese Academy of Sciences, Beijing, 100029, China.
| | - Xilong Liang
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, China
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan, 030006, China
| | - Chengbing Qin
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, China.
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan, 030006, China.
| | - Liantuan Xiao
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, China
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan, 030006, China
| | - Dongming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, Anhui, 230026, China
| | - Jing Zhang
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan, 030006, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, China
| | - Zheng Han
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan, 030006, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, China.
| | - Xiaoxi Li
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan, 030006, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, China.
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