Terahertz-Triggered Phase Transition and Hysteresis Narrowing in a Nanoantenna Patterned Vanadium Dioxide Film

Terahertz Metasurfaces Exploiting the Phase Transition of Vanadium Dioxide

Artificially designed modulators that enable a wealth of freedom in manipulating the terahertz (THz) waves at will are an essential component in THz sources and their widespread applications. Dynamically controlled metasurfaces, being multifunctional, ultrafast, integrable, broadband, high contrasting, and scalable on the operating wavelength, are critical in developing state-of-the-art THz modulators. Recently, external stimuli-triggered THz metasurfaces integrated with functional media have been extensively explored. The vanadium dioxide (VO2)-based hybrid metasurfaces, as a unique path toward active meta-devices, feature an insulator-metal phase transition under the excitation of heat, electricity, and light, etc. During the phase transition, the optical and electrical properties of the VO2 film undergo a massive modification with either a boosted or dropped conductivity by more than four orders of magnitude. Being benefited from the phase transition effect, the electromagnetic response of the VO2-based metasufaces can be actively controlled by applying external excitation. In this review, we present recent advances in dynamically controlled THz metasurfaces exploiting the VO2 phase transition categorized according to the external stimuli. THz time-domain spectroscopy is introduced as an indispensable platform in the studies of functional VO2 films. In each type of external excitation, four design strategies are employed to realize external stimuli-triggered VO2-based THz metasurfaces, including switching the transreflective operation mode, controlling the dielectric environment of metallic microstructures, tailoring the equivalent resonant microstructures, and modifying the electromagnetic properties of the VO2 unit cells. The microstructures' design and electromagnetic responses of the resulting active metasurfaces have been systematically demonstrated, with a particular focus on the critical role of the VO2 films in the dynamic modulation processes.

Dynamic Manipulation of THz Waves Enabled by Phase-Transition VO2 Thin Film

The reversible and multi-stimuli responsive insulator-metal transition of VO2, which enables dynamic modulation over the terahertz (THz) regime, has attracted plenty of attention for its potential applications in versatile active THz devices. Moreover, the investigation into the growth mechanism of VO2 films has led to improved film processing, more capable modulation and enhanced device compatibility into diverse THz applications. THz devices with VO2 as the key components exhibit remarkable response to external stimuli, which is not only applicable in THz modulators but also in rewritable optical memories by virtue of the intrinsic hysteresis behaviour of VO2. Depending on the predesigned device structure, the insulator-metal transition (IMT) of VO2 component can be controlled through thermal, electrical or optical methods. Recent research has paid special attention to the ultrafast modulation phenomenon observed in the photoinduced IMT, enabled by an intense femtosecond laser (fs laser) which supports "quasi-simultaneous" IMT within 1 ps. This progress report reviews the current state of the field, focusing on the material nature that gives rise to the modulation-allowed IMT for THz applications. An overview is presented of numerous IMT stimuli approaches with special emphasis on the underlying physical mechanisms. Subsequently, active manipulation of THz waves through pure VO2 film and VO2 hybrid metamaterials is surveyed, highlighting that VO2 can provide active modulation for a wide variety of applications. Finally, the common characteristics and future development directions of VO2-based tuneable THz devices are discussed.

Influence of micro-structure on modulation properties in VO2 composite terahertz memory metamaterials

We have grown VO₂ films and combined with terahertz metamaterials to manipulate the memory effect during the insulator-to-metal transition. The temperature-dependent resonant frequency of hybrid structure shows a thermal hysteresis accompanied with frequency shift and bandwidth variation due to the presence of a VO₂ dielectric layer. This frequency memory effect significantly depends on the metallic micro-structure. Further theoretical calculation demonstrates this phenomenon mainly originates from the different coupling strength between VO₂ and metallic structures. Our findings could facilitate the application of VO₂ films in the smart window and dynamical terahertz modulators.

A new approach to the fabrication of VO2 nanoswitches with ultra-low energy consumption

A new approach for the formation of free-standing vertical resistive nanoswitches based on VO2 nanocrystals (NCs) with embedded conductive nanosharp Si tips is demonstrated in the present article. This approach consists in the chemical vapor deposition synthesis of VO2 NCs on the apices of sharp conductive nanotips formed on a Si substrate by the standard methods of planar silicon technology. The amplification of the electric field and current density at the tip apex inside a high-quality VO2 NC leads to a record-breaking reduction of switching voltage (by a factor of 20-70) in comparison with conventional geometry devices with planar contacts. Our pulse measurements showed that the extremely low energy equal to 4.2 fJ was consumed for the switching in such NCs, and the total number of switching cycles in one NC without degradation exceeded 1011. The proposed approach can be extended to the formation of large arrays of such nanoswitches. We showed that periodic arrays of individual VO2 NCs were selectively synthesized on sharp Si tips. The nanosizes of the switches, ultra-low power consumption for switching and the possibility of forming dense arrays of such objects make the fabricated nanoswitches promising devices for future neuromorphic systems.

All-silicon reconfigurable metasurfaces for multifunction and tunable performance at optical frequencies based on glide symmetry

Dielectric metasurfaces have opened promising possibilities to enable a versatile platform in the miniaturization of optical elements at visible and infrared frequencies. Due to high efficiency and compatibility with CMOS fabrication technology, silicon-based metasurfaces have a remarkable potential for a wide variety of optical devices. Adding tunability mechanisms to metasurfaces could be beneficial for their application in areas such as communications, imaging and sensing. In this paper, we propose an all-silicon reconfigurable metasurface based on the concept of glide symmetry. The reconfigurability is achieved by a phase modulation of the transmitted wave activated by a lateral displacement of the layers. The misalignment between the layers creates a new inner periodicity which leads to the formation of a metamolecule with a new sort of near-field interaction. The proposed approach is highly versatile for developing multifunctional and tunable metadevices at optical frequencies. As a proof of concept, in this paper, we design a bifunctional metadevice, as well as a tunable lens and a controllable beam deflector operating at 1.55 μm.

Super-resolution reconstruction for terahertz imaging based on sub-pixel gradient field transform

This paper presents the gradient-guided image super-resolution reconstruction for terahertz imaging to improve the image quality, taking advantage of super-resolution reconstruction based on adaptive super-pixel gradient field transform. Moreover, spatial entropy-based enhancement and a bilateral filter are introduced to ensure better performance of the reconstruction. Furthermore, we compare the performance of reconstruction operated on terahertz images with frequencies of 0.1 THz, 0.3 THz, 0.5 THz, and 0.7 THz. Experimental results demonstrate that this method successfully improves the image quality and reconstruct high-resolution images from low-resolution images with the peak signal-to-noise ratio and structural similarity index improved. In addition, the signal frequency and intensity are demonstrated to affect the performance of reconstruction.

A terahertz-driven non-equilibrium phase transition in a room temperature atomic vapour

There are few demonstrated examples of phase transitions that may be driven directly by terahertz frequency electric fields, and those that are known require field strengths exceeding 1 MV cm-1. Here we report a non-equilibrium phase transition driven by a weak (≪1 V cm-1), continuous-wave terahertz electric field. The system consists of room temperature caesium vapour under continuous optical excitation to a high-lying Rydberg state, which is resonantly coupled to a nearby level by the terahertz electric field. We use a simple model to understand the underlying physical behaviour, and we demonstrate two protocols to exploit the phase transition as a narrowband terahertz detector: the first with a fast (20 μs) non-linear response to nano-Watts of incident radiation, and the second with a linearised response and effective noise equivalent power ≤1 pW Hz-1/2. The work opens the door to a class of terahertz devices controlled with low-field intensities and operating in a room temperature environment.

Mott transition by an impulsive dielectric breakdown

The transition of a Mott insulator to metal, the Mott transition, can occur via carrier doping by elemental substitution, and by photoirradiation, as observed in transition-metal compounds and in organic materials. Here, we show that the application of a strong electric field can induce a Mott transition by a new pathway, namely through impulsive dielectric breakdown. Irradiation of a terahertz electric-field pulse on an ET-based compound, κ-(ET) ₂Cu[N(CN) ₂]Br (ET:bis(ethylenedithio)tetrathiafulvalene), collapses the original Mott gap of ∼30 meV with a ∼0.1 ps time constant after doublon-holon pair productions by quantum tunnelling processes, as indicated by the nonlinear increase of Drude-like low-energy spectral weights. Additionally, we demonstrate metallization using this method is faster than that by a femtosecond laser-pulse irradiation and that the transition dynamics are more electronic and coherent. Thus, strong terahertz-pulse irradiation is an effective approach to achieve a purely electronic Mott transition, enhancing the understanding of its quantum nature.

Hydrothermal Synthesis of VO2 Polymorphs: Advantages, Challenges and Prospects for the Application of Energy Efficient Smart Windows

Vanadium dioxide (VO₂ ) is a widely studied inorganic phase change material, which has a reversible phase transition from semiconducting monoclinic to metallic rutile phase at a critical temperature of τ_c ≈ 68 °C. The abrupt decrease of infrared transmittance in the metallic phase makes VO₂ a potential candidate for thermochromic energy efficient windows to cut down building energy consumption. However, there are three long-standing issues that hindered its application in energy efficient windows: high τ_c , low luminous transmittance (T_lum ), and undesirable solar modulation ability (ΔT_sol ). Many approaches, including nano-thermochromism, porous films, biomimetic surface reconstruction, gridded structures, antireflective overcoatings, etc, have been proposed to tackle these issues. The first approach-nano-thermochromism-which is to integrate VO₂ nanoparticles in a transparent matrix, outperforms the rest; while the thermochromic performance is determined by particle size, stoichiometry, and crystallinity. A hydrothermal method is the most common method to fabricate high-quality VO₂ nanoparticles, and has its own advantages of large-scale synthesis and precise phase control of VO₂ . This Review focuses on hydrothermal synthesis, physical properties of VO₂ polymorphs, and their transformation to thermochromic VO₂ (M), and discusses the advantages, challenges, and prospects of VO₂ (M) in energy-efficient smart windows application.

Antenna-assisted picosecond control of nanoscale phase transition in vanadium dioxide

Nanoscale devices in which the interaction with light can be configured using external control signals hold great interest for next-generation optoelectronic circuits. Materials exhibiting a structural or electronic phase transition offer a large modulation contrast with multi-level optical switching and memory functionalities. In addition, plasmonic nanoantennas can provide an efficient enhancement mechanism for both the optically induced excitation and the readout of materials strategically positioned in their local environment. Here, we demonstrate picosecond all-optical switching of the local phase transition in plasmonic antenna-vanadium dioxide (VO₂) hybrids, exploiting strong resonant field enhancement and selective optical pumping in plasmonic hotspots. Polarization- and wavelength-dependent pump-probe spectroscopy of multifrequency crossed antenna arrays shows that nanoscale optical switching in plasmonic hotspots does not affect neighboring antennas placed within 100 nm of the excited antennas. The antenna-assisted pumping mechanism is confirmed by numerical model calculations of the resonant, antenna-mediated local heating on a picosecond time scale. The hybrid, nanoscale excitation mechanism results in 20 times reduced switching energies and 5 times faster recovery times than a VO₂ film without antennas, enabling fully reversible switching at over two million cycles per second and at local switching energies in the picojoule range. The hybrid solution of antennas and VO₂ provides a conceptual framework to merge the field localization and phase-transition response, enabling precise, nanoscale optical memory functionalities.

Hybrid metamaterial switching for manipulating chirality based on VO2 phase transition

Polarization manipulations of electromagnetic waves can be obtained by chiral and anisotropic metamaterials routinely, but the dynamic and high-efficiency modulations of chiral properties still remain challenging at the terahertz range. Here, we theoretically demonstrate a new scheme for realizing thermal-controlled chirality using a hybrid terahertz metamaterial with embedded vanadium dioxide (VO₂) films. The phase transition of VO₂ films in 90° twisted E-shaped resonators enables high-efficiency thermal modulation of linear polarization conversion. The asymmetric transmission of linearly polarized wave and circular dichroism simultaneously exhibit a pronounced switching effect dictated by temperature-controlled conductivity of VO₂ inclusions. The proposed hybrid metamaterial design opens exciting possibilities to achieve dynamic modulation of terahertz waves and further develop tunable terahertz polarization devices.

Photoheat-induced Schottky nanojunction and indirect Mott transition in VO₂: photocurrent analysis

In order to elucidate a mechanism of the insulator-to-metal transition (IMT) for a Mott insulator VO2 (3d(1)), we present Schottky nanojunctions and the structural phase transition (SPT) by simultaneous nanolevel measurements of photocurrent and Raman scattering in microlevel devices. The Schottky nanojunction with the monoclinic metallic phase between the monoclinic insulating phases is formed by the photoheat-induced IMT not accompanied with the SPT. The temperature dependence of the Schottky junction reveals that the Mott insulator has an electronic structure of an indirect subband between the main Hubbard d bands. The IMT as reverse process of the Mott transition occurs by temperature-induced excitation of bound charges in the indirect semiconductor band, most likely formed by impurities such as oxygen deficiency. The metal band (3d(1)) for the Mott insulator is screened (trapped) by the indirect band (impurities).