Low-Temperature Growth of Two-Dimensional Layered Chalcogenide Crystals on Liquid

Gallium-based liquid metals as reaction media for nanomaterials synthesis

Gallium-based liquid metals (LMs) and their alloys have gained prominence in the realm of flexible and stretchable electronics. Recent advances have expanded the interest to explore the electron-rich core and interface of LMs to synthesize various nanomaterials, where Ga-based LMs serve as versatile reaction media. In this paper, we delve into the latest developments within this burgeoning field. Our discussion begins by elucidating the unique attributes of LMs that render them suitable as reaction media, including their high metal solubility, low standard reduction potential, self-limiting oxidation and ultra-smooth and "layer" surface. We then provide a comprehensive categorized summary of utilizing these features to fabricate a variety of nanomaterials, including pure metallic materials (metal alloys, metal crystals, porous metals, high-entropy alloys and metallic single atoms), metal-inorganic compounds (2D metal oxides, 2D metallic inorganic compounds and 2D graphitic materials), as well as metal-organic composites (metal-organic frameworks). This paper concludes by discussing the current challenges in this field and exploring potential future directions. The versatility and unique properties of Ga-based LMs are poised to play a pivotal role in the future of nanomaterial science, paving the way for more efficient, sustainable, and innovative technological solutions.

Immobilized Precursor Particle Driven Growth of Centimeter-Sized MoTe2 Monolayer

Molybdenum ditelluride (MoTe₂) has attracted ever-growing attention in recent years due to its novel characteristics in spintronics and phase-engineering, and an efficient and convenient method to achieve large-area high-quality film is an essential step toward electronic applications. However, the growth of large-area monolayer MoTe₂ is challenging. Here, for the first time, we achieve the growth of a centimeter-sized monoclinic MoTe₂ monolayer and manifest the mechanism of immobilized precursor particle driven growth. Microscopic characterizations reveal an obvious trend of immobilized precursor particles being consumed by the monolayer and continuing to provide a source for the growth of the monolayer. Time-of-flight secondary ion mass spectrometry verifies the attachment of hydroxide ions on the surface of the MoTe₂ monolayer, thereby realizing the inhibition of crystal growth along the [001] zone axis and the continuous growth of the MoTe₂ monolayer. The first-principles DFT calculations prove the mechanism of immobilized precursor particles and the absorption of hydroxide ions on the MoTe₂ monolayer. The as-grown MoTe₂ monolayer exhibits a surface roughness of 0.19 nm and average conductivity of 1.5 × 10^-5 S/m, which prove the smoothness and uniformity of the MoTe₂ monolayer. Temperature-dependent electrical measurements together with the transfer characteristic curves further demonstrate the typical semimetallic properties of monoclinic MoTe₂. Our research elaborates the microscopic process of immobilized precursor particles to grow large-area MoTe₂ monolayer and provides a new thinking about the growth of many other two-dimensional materials.

Liquid-Metal-Assisted Growth of Vertical GaSe/MoS2 p-n Heterojunctions for Sensitive Self-Driven Photodetectors

van der Waals (vdW) vertical p-n junctions based on two-dimensional (2D) materials have shown great potential in flexible, self-driven, high-efficiency electronic and optoelectronic applications. However, due to the complex nucleation dynamics, the controllable synthesis of vertical heterostructures remains a daunting challenge. Here, we report the controlled growth of vertical GaSe/MoS₂ p-n heterojunctions via a liquid gallium (Ga)-assisted chemical vapor deposition method. The growth mechanism can be interpreted by theoretical calculations based on the Burton-Cabrera-Frank theory. By analyzing the diffusion barriers and the Ehrlich-Schwoebel barriers of adatoms, we found that the growth modes between vertical and lateral can be precisely switched by means of adjusting the amount of Ga. Based on the achieved high-quality vertical GaSe/MoS₂ p-n heterojunctions, photosensing devices are further designed and systematically investigated. Upon light illumination, prominent photovoltaic effects with large open-circuit voltage (0.61 V) and broadband detection capability from 375 to 633 nm are observed, which can further be employed for self-powered photodetection with high responsivity (900 mA/W) and fast response speed (5 ms). The developed liquid-metal-assisted strategy provides an effective method for controllable synthesis of vdW heterostructures and will give impetus to their applications in high-performance optoelectronic device.

TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides

As the need for super-high-resolution displays with various form factors has increased, it has become necessary to produce high-performance thin-film transistors (TFTs) that enable faster switching and higher current driving of each pixel in the display. Over the past few decades, hydrogenated amorphous silicon (a-Si:H) has been widely utilized as a TFT channel material. More recently, to meet the requirement of new types of displays such as organic light-emitting diode displays, and also to overcome the performance and reliability issues of a-Si:H, low-temperature polycrystalline silicon and amorphous oxide semiconductors have partly replaced a-Si:H channel materials. Basic material properties and device structures of TFTs in commercial displays are explored, and then the potential of atomically thin layered transition metal dichalcogenides as next-generation channel materials is discussed.

High-Performance Devices Based on InSe-In1-xGaxSe Van der Waals Heterojunctions

Multilayer InSe is a promising material for high-performance optoelectronic applications because of its small direct band gap and good light absorption. However, as a photoconductive photodetector, multilayer InSe photodetectors endure large dark current and high driving power. In this work, we study the electrical properties of InGaSe alloys and demonstrate the high-performance devices based on multilayer InSe-In_0.24Ga_0.76Se van der Waals heterojunctions (vdWHs). The electrical properties of InGaSe alloy samples strongly depend on the ratio of In to Ga, and the In_0.24Ga_0.76Se alloy shows a p-type transport behavior. More importantly, a multilayer InSe-In_0.24Ga_0.76Se vdWH device is demonstrated as a high-performance forward diode, photodiode, and self-powered photodetector (SPPD). The multilayer InSe-In_0.24Ga_0.76Se diode shows a high forward rectification ratio of over 10³ without gate modulation at room temperature, which is superior to most of the multilayer vdWH devices. Moreover, the vdWH photodiode has a broadband photoresponse spectrum (400-1000 nm) and a high-performance photoresponse. The light switching ratio, detectivity (D*), and responsivity (R) are 10³, 10¹² Jones, and 49 A W^-1 for 400 nm illumination, respectively. Furthermore, the vdWH SPPD also shows a sensitive photoresponse to a broadband spectrum of 400-1000 nm. Our work offers an opportunity for multilayer vdWH device applications in high-performance electronic and optoelectronic devices.

Particle-Catalyst-Free Vapor-Liquid-Solid Growth of Millimeter-Scale Crystalline Compound Semiconductors on Nonepitaxial Substrates

Direct growth of single-crystal compound semiconductors on nonepitaxial substrates is a promising route for device processing simplification in electronic and optoelectronic applications. However, the nonepitaxial growth technique for 2D single crystals is still a fundamental challenge. Here, we demonstrate that the macroscopic 2D interface of liquid metals and nonepitaxial solid substrates could be universally designed for the chemical vapor deposition growth of crystalline compound semiconductors. By adopting a sandwiched solid metal/liquid metal/solid substrate environment, millimeter-scale 2D GaS, 2D GaSe, and 1D GaTe single crystals of high quality were synthesized at the interface of liquid gallium and nonepitaxial substrates. Evidence shows that the particle-catalyst-free vapor-liquid-solid growth is driven by screw dislocations. Furthermore, we successfully extend the growth strategy to various metal chalcogenides (Sn, In, Cu, and Ag) and pnictides (Sb). Our work opens up a new route for the direct growth of single-crystalline compound semiconductors on nonepitaxial substrates.

Atomically thin TiO2 nanosheets synthesized using liquid metal chemistry

The library of two-dimensional materials is limited since many transition metal compounds are not stratified and can thus not be easily isolated as nanosheets. Liquid metal-based synthesis provides a new approach to overcome this limitation.

Controlled synthesis of 2D Mo2C/graphene heterostructure on liquid Au substrates as enhanced electrocatalytic electrodes

2D Mo₂C has drawn considerable interest recently for its excellent properties in 2D superconductivity and enhanced hydrogen evolution reaction (HER). Liquid metals have been demonstrated to be an ideal substrate for large-area 2D Mo₂C growth. However, the growth mechanism of 2D Mo₂C on liquid metals has rarely been explored. Here we report the synthesis of high-quality 2D Mo₂C crystals and Mo₂C/graphene heterostructures on liquid Au by chemical vapor deposition method. A sunk growth mode of 2D Mo₂C on liquid Au substrates has revealed, by atomic force microscope characterizations, that some Mo₂C crystals grow below the level of Au terraces around tens of nanometers. Furthermore, graphene/Mo₂C heterostructure is controllably synthesized by tuning the hydrogen/carbon ratio, which is proven to be an enhanced electrocatalyst for HER against pure Mo₂C crystal grown on liquid Au substrates.

Nonlayered Two-Dimensional Defective Semiconductor γ-Ga2S3 toward Broadband Photodetection

Two-dimensional (2D) materials exhibit high sensitivity to structural defects due to the nature of interface-type materials, and the corresponding structural defects can effectively modulate their inherent properties in turn, giving them a wide application range in high-performance and functional devices. 2D γ-Ga₂S₃ is a defective semiconductor with outstanding optoelectronic properties. However, its controllable preparation has not been implemented yet, which hinders exploring its potential applications. In this work, we introduce nonlayered γ-Ga₂S₃ into the 2D materials family, which was successfully synthesized via the space-confined chemical vapor deposition method. Its intriguing defective structure are revealed by high-resolution transmission electron microscopy and temperature-dependent cathodoluminescence spectra, which endow the γ-Ga₂S₃-based device with a broad photoresponse from the ultraviolet to near-infrared region and excellent photoelectric conversion capability. Simultaneously, the device also exhibits excellent ultraviolet detection ability ( R_λ = 61.3 A W^-1, I_on /I_off = 851, EQE = 2.17× 10⁴ %, D* = 1.52× 10¹⁰ Jones @350 nm), and relatively fast response (15 ms). This work provides a feasible way to fabricate ultrathin nonlayered materials and explore the potential applications of a 2D defective semiconductor in high-performance broadband photodetection, which also suggests a promising future of defect creation in optimizing photoelectric properties.

Liquid-Alloy-Assisted Growth of 2D Ternary Ga2 In4 S9 toward High-Performance UV Photodetection

2D ternary systems provide another degree of freedom of tuning physical properties through stoichiometry variation. However, the controllable growth of 2D ternary materials remains a huge challenge that hinders their practical applications. Here, for the first time, by using a gallium/indium liquid alloy as the precursor, the synthesis of high-quality 2D ternary Ga₂ In₄ S₉ flakes of only a few atomic layers thick (≈2.4 nm for the thinnest samples) through chemical vapor deposition is realized. Their UV-light-sensing applications are explored systematically. Photodetectors based on the Ga₂ In₄ S₉ flakes display outstanding UV detection ability (R _λ = 111.9 A W^-1 , external quantum efficiency = 3.85 × 10⁴ %, and D* = 2.25 × 10¹¹ Jones@360 nm) with a fast response speed (τ_ring ≈ 40 ms and τ_decay ≈ 50 ms). In addition, Ga₂ In₄ S₉ -based phototransistors exhibit a responsivity of ≈10⁴ A W^-1 @360 nm above the critical back-gate bias of ≈0 V. The use of the liquid alloy for synthesizing ultrathin 2D Ga₂ In₄ S₉ nanostructures may offer great opportunities for designing novel 2D optoelectronic materials to achieve optimal device performance.

Synthesis of Two-Dimensional Alloy Ga0.84In0.16Se Nanosheets for High-Performance Photodetector

The electronic and optoelectronic properties of 2D alloy Ga_0.84In_0.16Se were investigated for the first time. 2D Ga_0.84In_0.16Se FETs show p-type conduction behaviors. 2D Ga_0.84In_0.16Se photodetectors show high photoresponse in the visible light range of 500 to 700 nm. The responsivity value is 258 A/W for alloy photodetector (500 nm illumination), and it is 92 times and 20 times higher than those of 2D GaSe and InSe photodetectors, respectively. Moreover, the alloy photodetector exhibits good photoresponse stability and rapid photoresponse time. Our results demonstrate that 2D alloy Ga_0.84In_0.16Se has great potential for application in photodetection and sensor devices.

Controllable Fabrication of Graphene and Related Two-Dimensional Materials on Liquid Metals via Chemical Vapor Deposition

Due to the confinement of the charge, spin, and heat transport in the plane, graphene and related two-dimensional (2D) materials have been demonstrated to own many unique and excellent properties and witnessed many breakthroughs in physics. They show great application potential in many fields, especially for electronics and optoelectronics. However, a bottleneck to widespread applications is precise and reliable fabrication, in which the control of the layer number and domain assembly is the most basic and important since they directly determine the qualities and properties of 2D materials. The chemical vapor deposition (CVD) strategy was regarded as the frontrunner to achieve this target, and the design of the catalytic substrate is of great significance since it has the most direct influence on the catalysis and mass transfer, which can be the most essential elemental steps. In recent years, as compared to traditional solid metal catalysts, the emergence of liquid metal catalysts has brought a brand-new perspective and contributes to a huge change and optimization in the fabrication of 2D materials. On one hand, strictly self-limited growth behavior is discovered and is robust to the variation of the growth parameters. The atoms in the liquid metal tend to move intensely and arrange in an amorphous and isotropic way. The liquid surface is smooth and isotropic, and the vacancies in the fluidic liquid phase enable the embedding of heteroatoms. The phase transition from liquid to solid will facilitate the unique control of the mass-transfer path, which can trigger new growth mechanisms. On the other hand, the excellent rheological properties of liquid metals allow us to explore self-assembly of the 2D materials grown on the surface, which can activate new applications based on the derived collective properties, such as the integrated devices. Indeed, liquid metals show many unique behaviors in the catalytic growth and assembly of 2D materials. Thus, this Account aims to highlight the controllable fabrication of graphene and related 2D materials on liquid metals. By utilizing the phase transition of liquid metals, the segregation of precursors in the bulk can be controlled, leading to self-limited growth. By utilizing the fluidity of the liquid metals, 2D material crystals can achieve self-assembly on their surface, including oriented stitching, ordered assembly, and heterostacking, which enables the creation of new multilevel or hybrid structures, leading to property and function extension and even the emergence of new physics. Finally, the unique liquid characteristic of liquid metals can also offer us new ideas about the transfer process. By utilizing the shear transformation of liquid metals, the direct sliding transfer of 2D materials onto arbitrary substrates can be realized. The research concerning the self-limited growth, self-assembly, and sliding transfer of 2D materials on liquid metals is just raising the curtain on the behavioral study of 2D materials on liquid metals. We believe these primary technology developments revealed by liquid metals will establish a solid foundation for both fundamental research and practical application of 2D materials.

Room Temperature Electrochemical Synthesis of Crystalline GaOOH Nanoparticles from Expanding Liquid Metals

Gallium oxyhydroxide (GaOOH) is a wide band gap semiconductor of interest for a variety of applications in electronics and catalysis where the synthesis of the crystalline form is usually achieved via hydrothermal routes. Here we synthesize GaOOH via the electrochemical oxidation of gallium based liquid metals in solutions of 0.1 M NaNO₃ electrolyte with pH adjusted over the range of 7-8.4 with NaOH. This electrochemical approach employed under ambient conditions results in the formation of crystalline oblong shaped α-GaOOH nanoparticles from both liquid gallium and liquid galinstan which is a eutectic based on Ga, In, and Sn. The size and shape of the GaOOH particles could be controlled by the solution pH. The product is characterized with scanning electron microscopy, transmission electron microscopy, X-ray diffraction, UV-visible spectroscopy, and photoluminescence spectroscopy. During the electrochemical oxidation process, the liquid metal drop was found to expand significantly in the case of galinstan due to a constant electrowetting effect which resulted in the continuous expulsion of nanomaterial from the expanding liquid metal droplet. This electrochemical approach may be applicable to other liquid metals for the fabrication of metal oxide nanomaterials and also demonstrates that significant chemical reactions may be occurring at the surface of liquid metals that are actuated under an applied electric field in aqueous electrolytes.

Novel structured transition metal dichalcogenide nanosheets

Ultrathin two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have attracted considerable attention owing to their unique properties and great potential in a wide range of applications. Great efforts have been devoted to the preparation of novel-structured TMD nanosheets by engineering their intrinsic structures at the atomic scale. Until now, a lot of new-structured TMD nanosheets, such as vacancy-containing TMDs, heteroatom-doped TMDs, TMD alloys, 1T'/1T phase and in-plane TMD crystal-phase heterostructures, TMD heterostructures and Janus TMD nanosheets, have been prepared. These materials exhibit unique properties and hold great promise in various applications, including electronics/optoelectronics, thermoelectrics, catalysis, energy storage and conversion and biomedicine. This review focuses on the most recent important discoveries in the preparation, characterization and application of these new-structured ultrathin 2D layered TMDs.

Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures

Two-dimensional (2D) materials have attracted increasing research interest because of the abundant choice of materials with diverse and tunable electronic, optical, and chemical properties. Moreover, 2D material based heterostructures combining several individual 2D materials provide unique platforms to create an almost infinite number of materials and show exotic physical phenomena as well as new properties and applications. To achieve these high expectations, methods for the scalable preparation of 2D materials and 2D heterostructures of high quality and low cost must be developed. Chemical vapor deposition (CVD) is a powerful method which may meet the above requirements, and has been extensively used to grow 2D materials and their heterostructures in recent years, despite several challenges remaining. In this review of the challenges in the CVD growth of 2D materials, we highlight recent advances in the controlled growth of single crystal 2D materials, with an emphasis on semiconducting transition metal dichalcogenides. We provide insight into the growth mechanisms of single crystal 2D domains and the key technologies used to realize wafer-scale growth of continuous and homogeneous 2D films which are important for practical applications. Meanwhile, strategies to design and grow various kinds of 2D material based heterostructures are thoroughly discussed. The applications of CVD-grown 2D materials and their heterostructures in electronics, optoelectronics, sensors, flexible devices, and electrocatalysis are also discussed. Finally, we suggest solutions to these challenges and ideas concerning future developments in this emerging field.

2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection

Two-dimensional materials beyond graphene and TMDs can be promising candidates for wide-spectra photodetection.