Stranski-Krastanov and Volmer-Weber CVD Growth Regimes To Control the Stacking Order in Bilayer Graphene

Overcoming the Incompatibility Between Electrical Conductivity and Electromagnetic Transmissivity: A Graphene Glass Fiber Fabric Design Strategy

Conventional conductive materials such as metals are crucial functional components of conductive systems in diverse electronic instruments. However, their severe intrinsic impedance mismatch with air dielectric causes strong reflection of incident electromagnetic waves, and the resulting low electromagnetic transmissivity typically interferes with surrounding electromagnetic signal communications in modern multifunction-integrated instruments. Herein, graphene glass fiber fabric (GGFF) that merges intrinsic electrical and electromagnetic properties of graphene with dielectric attributes and highly porous macrostructure of glass fiber fabric (GFF) is innovatively developed. Using a novel decoupling chemical vapor deposition growth strategy, high-quality and layer-limited graphene is prepared on noncatalytic nonmetallic GFF in a controlled manner; this is pivotal to realizing GGFF with the desired compatibility among high conductivity, low electromagnetic reflectivity, and high electromagnetic transmissivity. At the same sheet resistance over a wide range of values (250-3000 Ω·sq-1), the GGFF exhibits significantly lower electromagnetic reflectivity (by 0.42-0.51) and higher transmissivity (by 0.27-0.62) than those of its metal-based conductive counterpart (CuGFF). The material design strategy reported herein provides a constructive solution to eliminate the incompatibility between electrical conductivity and electromagnetic transmissivity faced by conventional conductive materials, spotlighting the applicability of GGFF in electric heating scenarios in radar, antenna, and stealth systems.

Ultraclean Interface of Metal Chalcogenides with Metal through Confined Interfacial Chalcogenization

Acquisition of defect-free transition metal dichalcogenides (TMDs) channels with clean heterojunctions is a critical issue in the production of TMD-based functional electronic devices. Conventional approaches have transferred TMD onto a target substrate, and then apply the typical device fabrication processes. Unfortunately, those processes cause physical and chemical defects in the TMD channels. Here, a novel synthetic process of TMD thin films, named confined interfacial chalcogenization (CIC) is proposed. In the proposed synthesis, a uniform TMDlayer is created at the Au/transition metal (TM) interface by diffusion of chalcogen through the upper Au layer and the reaction of chalcogen with the underlying TM. CIC allows for ultraclean heterojunctions with the metals, synthesis of various homo- and hetero-structured TMDs, and in situ TMD channel formation in the last stage of device fabrication. The mechanism of TMD growth is revealed by the TM-accelerated chalcogen diffusion, epitaxial growth of TMD on Au(111). We demonstrated a wafer-scale TMD-based vertical memristors which exhibit excellent statistical concordance in device performance enabled by the ultraclean heterojunctions and superior uniformity in thickness. CIC proposed in this study represents a breakthrough in in TMD-based electronic device fabrication and marking a substantial step toward practical next-generation integrated electronics.

Controllable Synthesis and Growth Mechanism of Interlayer-Coupled Multilayer Graphene

The potential applications of multilayer graphene in many fields, such as superconductivity and thermal conductivity, continue to emerge. However, there are still many problems in the growth mechanism of multilayer graphene. In this paper, a simple control strategy for the preparation of interlayer-coupled multilayer graphene on a liquid Cu substrate was developed. By adjusting the flow rate of a carrier gas in the CVD system, the effect for finely controlling the carbon source supply was achieved. Therefore, the carbon could diffuse from the edge of the single-layer graphene to underneath the layer of graphene and then interlayer-coupled multilayer graphene with different shapes were prepared. Through a variety of characterization methods, it was determined that the stacked mode of interlayer-coupled multilayer graphene conformed to AB-stacking structure. The small multilayer graphene domains stacked under single-layer graphene was first found, and the growth process and growth mechanism of interlayer-coupled multilayer graphene with winged and umbrella shapes were studied, respectively. This study reveals the growth mechanism of multilayer graphene grown by using a carbon source through edge diffusion, paving the way for the controllable preparation of multilayer graphene on a liquid Cu surface.

Recent Understanding in the Chemical Vapor Deposition of Multilayer Graphene: Controlling Uniformity, Thickness, and Stacking Configuration

Multilayer graphene has attracted significant attention because its physical properties can be tuned by stacking its layers in a particular configuration. To apply the intriguing properties of multilayer graphene in various optoelectronic or spintronic devices, it is essential to develop a synthetic method that enables the control of the stacking configuration. This review article presents the recent progress in the synthesis of multilayer graphene by chemical vapor deposition (CVD). First, we discuss the CVD of multilayer graphene, utilizing the precipitation or segregation of carbon atoms from metal catalysts with high carbon solubility. Subsequently, we present novel CVD approaches to yield uniform and thickness-controlled multilayer graphene, which goes beyond the conventional precipitation or segregation methods. Finally, we introduce the latest studies on the control of stacking configurations in bilayer graphene during CVD processes.

Role of Bilayer Graphene Microstructure on the Nucleation of WSe2 Overlayers

Over the past few years, graphene grown by chemical vapor deposition (CVD) has gained prominence as a template to grow transition metal dichalcogenide (TMD) overlayers. The resulting two-dimensional (2D) TMD/graphene vertical heterostructures are attractive for optoelectronic and energy applications. However, the effects of the microstructural heterogeneities of graphene grown by CVD on the growth of the TMD overlayers are relatively unknown. Here, we present a detailed investigation of how the stacking order and twist angle of CVD graphene influence the nucleation of WSe₂ triangular crystals. Through the combination of experiments and theory, we correlate the presence of interlayer dislocations in bilayer graphene with how WSe₂ nucleates, in agreement with the observation of a higher nucleation density of WSe₂ on top of Bernal-stacked bilayer graphene versus twisted bilayer graphene. Scanning/transmission electron microscopy (S/TEM) data show that interlayer dislocations are present only in Bernal-stacked bilayer graphene but not in twisted bilayer graphene. Atomistic ReaxFF reactive force field molecular dynamics simulations reveal that strain relaxation promotes the formation of these interlayer dislocations with localized buckling in Bernal-stacked bilayer graphene, whereas the strain becomes distributed in twisted bilayer graphene. Furthermore, these localized buckles in graphene are predicted to serve as thermodynamically favorable sites for binding WSe_x molecules, leading to the higher nucleation density of WSe₂ on Bernal-stacked graphene. Overall, this study explores synthesis-structure correlations in the WSe₂/graphene vertical heterostructure system toward the site-selective synthesis of TMDs by controlling the structural attributes of the graphene substrate.

Van der Waals nanomesh electronics on arbitrary surfaces

Chemical bonds, including covalent and ionic bonds, endow semiconductors with stable electronic configurations but also impose constraints on their synthesis and lattice-mismatched heteroepitaxy. Here, the unique multi-scale van der Waals (vdWs) interactions are explored in one-dimensional tellurium (Te) systems to overcome these restrictions, enabled by the vdWs bonds between Te atomic chains and the spontaneous misfit relaxation at quasi-vdWs interfaces. Wafer-scale Te vdWs nanomeshes composed of self-welding Te nanowires are laterally vapor grown on arbitrary surfaces at a low temperature of 100 °C, bringing greater integration freedoms for enhanced device functionality and broad applicability. The prepared Te vdWs nanomeshes can be patterned at the microscale and exhibit high field-effect hole mobility of 145 cm²/Vs, ultrafast photoresponse below 3 μs in paper-based infrared photodetectors, as well as controllable electronic structure in mixed-dimensional heterojunctions. All these device metrics of Te vdWs nanomesh electronics are promising to meet emerging technological demands.

Modified Stranski-Krastanov Growth of Amino Acid Arrays toward Piezoelectric Energy Harvesting

Biomolecule-based piezoelectric nanostructures emerged as a new class of energy-converse materials, and designing tailored piezoelectric amino acid arrays is essential to achieve efficient electrical-mechanical coupling and fulfill their application potential. However, the controlled growth of amino acid nanostructures is still challenging due to the limited understanding of their growth mechanism. Herein, we base on the Stranski-Krastanov (S-K) growth mode and propose a mechanism for the growth of ordered amino acid array structures via physical vapor deposition. The growth of vertical valine sheet arrays is examined by changing the substrate temperature, chamber pressure, and source-substrate distance, and a "layer-plus-sheet" growth process is revealed. The modified S-K growth mode is applied to fabricate other amino acid nanostructures like leucine and isoleucine. The growth mode not only explains the formation of uniform and controllable morphology of amino acid structures but also leads to the significant enhancement of their piezoelectric properties. The maximal effective piezoelectric constant of valine sheets is 11.4 pm V^-1, which approaches its highest predicted value. The output voltage of the valine array-based nanogenerator is ∼4.6 times the output voltage of the valine powder-based nanogenerator. This work provides new insights into the growth mechanism of ordered piezoelectric amino acid arrays, making them promising candidates for applications in wearable or implantable electronic devices.

Spiral Growth of Adlayer Graphene

The morphology of as-grown graphene in chemical vapor deposition (CVD) experiments is sensitive to the reaction environment. Understanding the mechanism of formation of different graphene morphologies is essential to achieve controlled graphene CVD growth. Here the growth and formation mechanism of adlayer graphene spirals are reported. An adlayer graphene spiral is formed by fast propagation of the tips of spiral arms along the edge of the first graphene layer. The driving force to form spirals is the limited availability of carbon diffusing from the Cu surface through the edge of the first graphene layer. In addition, it is found that graphene onions are formed by overlapping graphene spirals with clockwise and anticlockwise arms. Based on these features, a kinetic Monte Carlo (kMC) method is demonstrated using which all the observed graphene spiral structures are successfully reproduced at the atomic level. This study thus unravels the hither-to unresolved mechanism of graphene onion growth and paves the way to the controllable growth of few-layer graphene by increasing the carbon supply at the edge of the first layer graphene.

Graphene Growth on Electroformed Copper Substrates by Atmospheric Pressure CVD

Chemical vapor deposition (CVD) is regarded as the most promising technique for the mass production of graphene. CVD synthesis under vacuum is the most employed process, because the slower kinetics give better control on the graphene quality, but the requirement for high-vacuum equipment heavily affects the overall energy cost. In this work, we explore the possibility of using electroformed Cu substrate as a catalyst for atmospheric-pressure graphene growth. Electrochemical processes can produce high purity, freestanding metallic films, avoiding the surface defects that characterize the rolled foils. It was found that the growth mode of graphene on the electroformed catalyst was related to the surface morphology, which, in turn, was affected by the preliminary treatment of the substrate material. Suitable conditions for growing single layer graphene were identified.

CVD Synthesis of 3D-Shaped 3D Graphene Using a 3D-Printed Nickel-PLGA Catalyst Precursor

Earlier, various attempts to develop graphene structures using chemical and nonchemical routes were reported. Being efficient, scalable, and repeatable, 3D printing of graphene-based polymer inks and aerogels seems attractive; however, the produced structures highly rely on a binder or an ice support to stay intact. The presence of a binder or graphene oxide hinders the translation of the excellent graphene properties to the 3D structure. In this communication, we report our efforts to synthesize a 3D-shaped 3D graphene (3D²G) with good quality, desirable shape, and structure control by combining 3D printing with the atmospheric pressure chemical vapor deposition (CVD) process. Direct ink writing has been used in this work as a 3D-printing technique to print nickel powder-PLGA slurry into various shapes. The latter has been employed as a catalyst for graphene growth via CVD. Porous 3D²G with high purity was obtained after etching out the nickel substrate. The conducted micro CT and 2D Raman study of pristine 3D²G revealed important features of this new material. The interconnected porous nature of the obtained 3D²G combined with its good electrical conductivity (about 17 S/cm) and promising electrochemical properties invites applications for energy storage electrodes, where fast electron transfer and intimate contact with the active material and with the electrolyte are critically important. By changing the printing design, one can manipulate the electrical, electrochemical, and mechanical properties, including the structural porosity, without any requirement for additional doping or chemical postprocessing. The obtained binder-free 3D²G showed a very good thermal stability, tested by thermo-gravimetric analysis in air up to 500 °C. This work brings together two advanced manufacturing approaches, CVD and 3D printing, thus enabling the synthesis of high-quality, binder-free 3D²G structures with a tailored design that appeared to be suitable for multiple applications.

In Situ Fabrication of Freestanding Single-Atom-Thick 2D Metal/Metallene and 2D Metal/ Metallene Oxide Membranes: Recent Developments

In recent years, two-dimensional (2D) materials have attracted a lot of research interest as they exhibit several fascinating properties. However, outside of 2D materials derived from van der Waals layered bulk materials only a few other such materials are realized, and it remains difficult to confirm their 2D freestanding structure. Despite that, many metals are predicted to exist as 2D systems. In this review, the authors summarize the recent progress made in the synthesis and characterization of these 2D metals, so called metallenes, and their oxide forms, metallene oxides as free standing 2D structures formed in situ through the use of transmission electron microscopy (TEM) and scanning TEM (STEM) to synthesize these materials. Two primary approaches for forming freestanding monoatomic metallic membranes are identified. In the first, graphene pores as a means to suspend the metallene or metallene oxide and in the second, electron-beam sputtering for the selective etching of metal alloys or thick complex initial materials is employed to obtain freestanding single-atom-thick 2D metal. The data show a growing number of 2D metals/metallenes and 2D metal/ metallene oxides having been confirmed and point to a bright future for further discoveries of these 2D materials.

Electric Field Induced Twisted Bilayer Graphene Infrared Plasmon Spectrum

In this work, we investigate the role of an external electric field in modulating the spectrum and electronic structure behavior of twisted bilayer graphene (TBG) and its physical mechanisms. Through theoretical studies, it is found that the external electric field can drive the relative positions of the conduction band and valence band to some extent. The difference of electric field strength and direction can reduce the original conduction band, and through the Fermi energy level, the band is significantly influenced by the tunable electric field and also increases the density of states of the valence band passing through the Fermi level. Under these two effects, the valence and conduction bands can alternately fold, causing drastic changes in spectrum behavior. In turn, the plasmon spectrum of TBG varies from semiconductor to metal. The dielectric function of TBG can exhibit plasmon resonance in a certain range of infrared.

Hetero-site nucleation for growing twisted bilayer graphene with a wide range of twist angles

Twisted bilayer graphene (tBLG) has recently attracted growing interest due to its unique twist-angle-dependent electronic properties. The preparation of high-quality large-area bilayer graphene with rich rotation angles would be important for the investigation of angle-dependent physics and applications, which, however, is still challenging. Here, we demonstrate a chemical vapor deposition (CVD) approach for growing high-quality tBLG using a hetero-site nucleation strategy, which enables the nucleation of the second layer at a different site from that of the first layer. The fraction of tBLGs in bilayer graphene domains with twist angles ranging from 0° to 30° was found to be improved to 88%, which is significantly higher than those reported previously. The hetero-site nucleation behavior was carefully investigated using an isotope-labeling technique. Furthermore, the clear Moiré patterns and ultrahigh room-temperature carrier mobility of 68,000 cm² V^-1 s^-1 confirmed the high crystalline quality of our tBLG. Our study opens an avenue for the controllable growth of tBLGs for both fundamental research and practical applications.

Fabrication Strategies of Twisted Bilayer Graphenes and Their Unique Properties

Twisted bilayer graphene (tBLG) exhibits a host of innovative physical phenomena owing to the formation of moiré superlattice. Especially, the discovery of superconducting behavior has generated new interest in graphene. The growing studies of tBLG mainly focus on its physical properties, while the fabrication of high-quality tBLG is a prerequisite for achieving the desired properties due to the great dependence on the twist angle and the interfacial contact. Here, the cutting-edge preparation strategies and challenges of tBLG fabrication are reviewed. The advantages and disadvantages of chemical vapor deposition, epitaxial growth on silicon carbide, stacking monolayer graphene, and folding monolayer graphene methods for the fabrication of tBLG are analyzed in detail, providing a reference for further development of preparation methods. Moreover, the characterization methods of twist angle for the tBLG are presented. Then, the unique physicochemical properties and corresponding applications of tBLG, containing correlated insulating and superconducting states, ferromagnetic state, soliton, enhanced optical absorption, tunable bandgap, and lithium intercalation and diffusion, are described. Finally, the opportunities and challenges for fabricating high-quality and large-area tBLG are discussed, unique physical properties are displayed, and new applications inferred from its angle-dependent features are explored, thereby impelling the commercialization of tBLG from laboratory to market.

Graphene adlayer growth between nonepitaxial graphene and the Ni(111) substrate: a theoretical study

Understanding the fundamentals of chemical vapor deposition bilayer graphene growth is crucial for its synthesis. By employing density functional theory calculations and classical molecular dynamics simulations, we have investigated the evolution of carbon structures and the kinetics of the adlayer graphene nucleation between the graphene top layer (GTL) and the Ni(111) substrate. Compared to the epitaxial GTL, the weaker interaction between the nonepitaxial GTL and the Ni(111) substrate makes the nucleation of the adlayer more favorable. Furthermore, the defects involving in the adlayer graphene are easier to be healed by adopting the nonepitaxial GTL. Our results agree well with the experimental observation and demonstrate that the adlayer graphene with a high quality can be grown underneath the nonepitaxial GTL on Ni-like substrates.

Robust Spin Interconnect with Isotropic Spin Dynamics in Chemical Vapor Deposited Graphene Layers and Boundaries

The utilization of large-area graphene grown by chemical vapor deposition (CVD) is crucial for the development of scalable spin interconnects in all-spin-based memory and logic circuits. However, the fundamental influence of the presence of multilayer graphene patches and their boundaries on spin dynamics has not been addressed yet, which is necessary for basic understanding and application of robust spin interconnects. Here, we report universal spin transport and dynamic properties in specially devised single layer, bilayer, and trilayer graphene channels and their layer boundaries and folds that are usually present in CVD graphene samples. We observe uniform spin lifetime with isotropic spin relaxation for spins with different orientations in graphene layers and their boundaries at room temperature. In all of the inhomogeneous graphene channels, the spin lifetime anisotropy ratios for spins polarized out-of-plane and in-plane are measured to be close to unity. Our analysis shows the importance of both Elliott-Yafet and D'yakonov-Perel' mechanisms with an increasing role of the latter mechanism in multilayer channels. These results of universal and isotropic spin transport on large-area inhomogeneous CVD graphene with multilayer patches and their boundaries and folds at room temperature prove its outstanding spin interconnect functionality, which is beneficial for the development of scalable spintronic circuits.

Large-Area Single-Crystal Graphene via Self-Organization at the Macroscale

In 1665 Christiaan Huygens first noticed how two pendulums, regardless of their initial state, would synchronize.  It is now known that the universe is full of complex self-organizing systems, from neural networks to correlated materials. Here, graphene flakes, nucleated over a polycrystalline graphene film, synchronize during growth so as to ultimately yield a common crystal orientation at the macroscale. Strain and diffusion gradients are argued as the probable causes for the long-range cross-talk between flakes and the formation of a single-grain graphene layer. The work demonstrates that graphene synthesis can be advanced to control the nucleated crystal shape, registry, and relative alignment between graphene crystals for large area, that is, a single-crystal bilayer, and (AB-stacked) few-layer graphene can been grown at the wafer scale.

Layer-controlled single-crystalline graphene film with stacking order via Cu-Si alloy formation

Multilayer graphene and its stacking order provide both fundamentally intriguing properties and technological engineering applications. Several approaches to control the stacking order have been demonstrated, but a method of precisely controlling the number of layers with desired stacking sequences is still lacking. Here, we propose an approach for controlling the layer thickness and crystallographic stacking sequence of multilayer graphene films at the wafer scale via Cu-Si alloy formation using direct chemical vapour deposition. C atoms are introduced by tuning the ultra-low-limit CH₄ concentration to form a SiC layer, reaching one to four graphene layers at the wafer scale after Si sublimation. The crystallographic structure of single-crystalline or uniformly oriented bilayer (AB), trilayer (ABA) and tetralayer (ABCA) graphene are determined via nano-angle-resolved photoemission spectroscopy, which agrees with theoretical calculations, Raman spectroscopy and transport measurements. The present study takes a step towards the layer-controlled growth of graphite and other two-dimensional materials.

Two-dimensional type-II g-C3N4/SiP-GaS heterojunctions as water splitting photocatalysts: first-principles predictions

Hydrogen production from water splitting by sunlight is a promising approach to solve the increasing energy and environmental crises, and the two-dimensional (2D) g-C₃N₄ monolayer is a red star in this realm. However, it suffers from low quantum efficiency caused by the fast combination of photogenerated electrons and holes. In this work, we investigate the electronic and photocatalytic properties of three newly proposed g-C₃N₄/SiP-GaS-α, -β and -γ heterojunctions via first principles predictions. Theoretical results demonstrate that the three g-C₃N₄/SiP-GaS heterojunctions exhibit direct bandgaps of ∼2.2 eV, and have a type-II band alignment with the valence band maximum (VBM) located at the g-C₃N₄ layer and the conduction band minimum (CBM) at the SiP-GaS layer. Furthermore, their band edges straddle the redox potential of water in a wide range of biaxial strain. Their absorption coefficients are several times larger than that of most previously discovered 2D heterojunctions. Moreover, the in-built electric field adds a driving force to separate photogenerated electrons and holes. The oxygen evolution reaction (OER) and hydrogen evolution reaction (HER) successfully take place on the g-C₃N₄ and SiP-GaS layers, respectively. Briefly, separated charge carriers, suitable band edges and strong visible-light absorbance, successful OER and HER enable the three g-C₃N₄/SiP-GaS heterojunctions to be promising water-splitting photocatalysts.

Liquid-Metal-Templated Synthesis of 2D Graphitic Materials at Room Temperature

Room-temperature synthesis of 2D graphitic materials (2D-GMs) remains an elusive aim, especially with electrochemical means. Here, it is shown that liquid metals render this possible as they offer catalytic activity and an ultrasmooth templating interface that promotes Frank-van der Merwe regime growth, while allowing facile exfoliation due to the absence of interfacial forces as a nonpolar liquid. The 2D-GMs are formed at low onset potential and can be in situ doped depending on the choice of organic precursors and the electrochemical set-up. The materials are tuned to exhibit porous or pinhole-free morphologies and are engineered for their degree of oxidation and number of layers. The proposed liquid-metal-based room-temperature electrochemical route can be expanded to many other 2D materials.

In Situ Formation of Free-Standing Single-Atom-Thick Antiferromagnetic Chromium Membranes

Compared to van der Waals two-dimensional (2D) layers with lateral covalent bonds, metallic bonding systems favor close-packed structures, and thus, free-standing 2D metals have remained, for the most part, elusive. However, a number of theoretical studies suggest a number of metals can exist as 2D materials and a few early experiments support this notion. Here we demonstrate free-standing single-atom-thick crystalline chromium (Cr) suspended membranes using aberration-corrected transmission electron microscopy and image simulations. Density functional theory studies confirm the 2D Cr membranes have an antiferromagnetic ground state making them highly attractive for spintronic applications. Moreover, the work also helps consolidate the existence of a new family of 2D metal layers.

Understanding Interlayer Contact Conductance in Twisted Bilayer Graphene

Bilayer or few-layer 2D materials showing novel electrical properties in electronic device applications have aroused increasing interest in recent years. Obtaining a comprehensive understanding of interlayer contact conductance still remains a challenge, but is significant for improving the performance of bilayer or few-layer 2D electronic devices. Here, conductive atomic force microscope (C-AFM) experiments are reported to explore the interlayer contact conductance between bilayer graphene (BLG) with various twisted stacking structures fabricated by the chemical vapor deposition (CVD) method. The current maps show that the interlayer contact conductance between BLG strongly depends on the twist angle. The interlayer contact conductance of 0° AB-stacking bilayer graphene (AB-BLG) is ≈4 times as large as that of 30° twisted bilayer graphene (t-BLG), which indicates that the twist angle-dependent interlayer contact conductance originates from the coupling-decoupling transitions. Moreover, the moiré superlattice-level current images of t-BLG show modulations of local interlayer contact conductance. Density functional theory calculations together with a theoretical model reproduce the C-AFM current map and show that the modulation is mainly attributed to the overall contribution of local interfacial carrier density and tunneling barrier.

Large scale epitaxial graphite grown on twin free nickel(111)/spinel substrate

Large scale, single crystalline graphite with millimeter size domain is achieved using a LPCVD process with a temperature below 925 °C.

Controlling the number of layers in graphene using the growth pressure

Monolayer graphene is commonly grown on Cu substrates due to the self-limiting nature of graphene synthesis by chemical vapor deposition (CVD). Consequently, the growth of multilayer graphene by CVD has proven to be relatively difficult. This study demonstrates that the number of layers in graphene synthesized on a copper substrate can be precisely set by controlling the partial pressure of hydrogen gas used in the CVD process. This study also shows that a pressure threshold exists for a distinct transition from monolayer to multilayer graphene growth. This threshold is shown to be the boundary where the graphene growth process on Cu by CVD is no longer a self-limiting process. In addition, the multilayer graphene synthesized through the pressure control method forms in the Volmer-Weber mode with an AB stacking structure.

High-Energy Flexible Supercapacitor-Synergistic Effects of Polyhydroquinone and RuO2· xH2O with Microsized, Few-Layered, Self-Supportive Exfoliated-Graphite Sheets

An effective and straightforward route for tailoring the self-supporting, exfoliated flexible graphite substrate (E-FGS) using electrochemical anodization is proposed. E-FGS has essential features of highly exfoliated, few-layered, two-dimensional graphite sheets with the size of several tens of micrometers, interconnected along the axis of the substrate surface. The novel hierarchical porous structural morphology of E-FGS enables large active sites for efficient electrolyte ion and charge transport when used as electrode material for a supercapacitor. In order to effectively utilize this promising E-FGS electrode for energy storage purpose, a ternary composite is further synthesized with pseudocapacitive polyhydroquinone (PHQ) and hydrous RuO₂ (hRO). hRO is synthesized via a sol-gel route, while electropolymerization is utilized for the electrodeposition of PHQ over E-FGS. Ultimately, the fabricated self-supporting E-FGS-based flexible supercapacitor is capable of delivering areal specific capacitance values as high as 378 mF cm^-2 at a current density of 1 mA cm^-2. Addition of the pseudocapacitive component to the E-FGS texture leads to ∼10 times increase of the electrochemical charge storage capability. The imposition of mechanical forces to this flexible supercapacitor device results in trivial changes in electrochemical properties and is still capable of retaining 91% of the initial specific capacitance after 10 000 cycles. Alongside, the fabricated symmetrical solid-state flexible device exhibited a high energy density of 8.4 μWh cm^-2. The excellent performance along with the ease of synthesis and fabrication process of the flexible solid-state supercapacitor device using PHQ/hRO/E-FGS holds promise for large-scale production.

Restoring self-limited growth of single-layer graphene on copper foil via backside coating

The growth of single-layer graphene (SLG) by chemical vapor deposition (CVD) on copper surfaces is very popular because of the self-limiting effect that, in principle, prevents the growth of few-layer graphene (FLG). However, the reproducibility of the CVD growth of homogeneous SLG remains a major challenge, especially if one wants to avoid heavy surface treatments, monocrystalline substrates and expensive equipment to control the atmosphere inside the growth system. We demonstrate here that backside tungsten coating of copper foils allows for the exclusive growth of SLG with full coverage by atmospheric pressure CVD implemented in a vacuum-free furnace. We show that the absence of FLG patches is related to the suppression of carbon diffusion through copper. In the perspective of large-scale production of graphene, this approach constitutes a significant improvement to the traditional CVD growth process since (1) a tight control of the hydrocarbon flow is no longer required to avoid FLG formation and, consequently, (2) the growth duration necessary to reach full coverage can be drastically shortened.

Toward Mass Production of CVD Graphene Films

Chemical vapor deposition (CVD) is considered to be an efficient method for fabricating large-area and high-quality graphene films due to its excellent controllability and scalability. Great efforts have been made to control the growth of graphene to achieve large domain sizes, uniform layers, fast growth, and low synthesis temperatures. Some attempts have been made by both the scientific community and startup companies to mass produce graphene films; however, there is a large difference in the quality of graphene synthesized on a laboratory scale and an industrial scale. Here, recent progress toward the mass production of CVD graphene films is summarized, including the manufacturing process, equipment, and critical process parameters. Moreover, the large-scale homogeneity of graphene films and fast characterization methods are also discussed, which are crucial for quality control in mass production.

Direct chemical vapor deposition synthesis of large area single-layer brominated graphene

Graphene and its derivatives such as functionalized graphene are considered to hold significant promise in numerous applications. Within that context, halogen functionalization is exciting for radical and nucleophilic substitution reactions as well as for the grafting of organic moieties. Historically, the successful covalent doping of sp² carbon with halogens, such as bromine, was demonstrated with carbon nanotubes. However, the direct synthesis of brominated graphene has thus far remained elusive. In this study we show how large area brominated graphene with C–Br bonds can be achieved directly (i.e. a single step) using hydrogen rich low pressure chemical vapor deposition. The direct synthesis of brominated graphene could lead to practical developments.

In this study we present the first direct synthesis of large area, single layer, crystalline graphene with covalently doped bromine.

Growth of 'W' doped molybdenum disulfide on graphene transferred molybdenum substrate

In the present study, a novel method has been carried out to grow tungsten (W) doped molybdenum disulfide (MoS₂) on the graphene transferred TEM grid in a chemical vapor deposition (CVD) setup. Tungsten trioxide (WO₃) has been used as a source for ‘W’ while ‘Mo’ has been derived from Mo based substrate. Different experimental parameters were used in this experiment. Higher gas flow rate decreases the size of the sample flake and on other side increases the dopant concentrations. The interaction mechanism between Mo, S, W and oxygen (O) have been explored. The influence of oxygen seems to be not avoidable completely which also imposes effective growth condition for the reaction of Mo with incoming sulfur atoms. The difference in the migration energies of Mo, WO₃, S clusters on the graphene and the higher reactivity of Mo clusters over other possibly formed atomic clusters on the graphene leads to the growth of W doped MoS₂ monolayers. Formation of MoS₂ monolayer and the nature of edge doping of ‘W’ is explained well with the crystal model using underlying nucleation principles. We believe our result provide a special route to prepare W doped MoS₂ on graphene substrate in the future.

Crystalline Bilayer Graphene with Preferential Stacking from Ni-Cu Gradient Alloy

We developed a high-yield synthesis of highly crystalline bilayer graphene (BLG) with two preferential stacking modes using a Ni-Cu gradient alloy growth substrate. Previously reported approaches for BLG growth include flat growth substrates of Cu or Ni-Cu uniform alloys and "copper pocket" structures. Use of flat substrates has the advantage of being scalable, but the growth mechanism is either "surface limited" (for Cu) or carbon precipitation (for uniform Ni-Cu), which results in multicrystalline BLG grains. For copper pockets, growth proceeds through a carbon back-diffusion mechanism, which leads to the formation of highly crystalline BLG, but scaling of the copper pocket structure is expected to be difficult. Here we demonstrate a Ni-Cu gradient alloy that combines the advantages of these earlier methods: the substrate is flat, so easy to scale, while growth proceeds by a carbon back-diffusion mechanism leading to high-yield growth of BLG with high crystallinity. The BLG layer stacking was almost exclusively Bernal or twisted with an angle of 30°, consistent with first-principles calculations we conducted. Furthermore, we demonstrated scalable production of transistor arrays based crystalline Bernal-stacked BLG with a band gap that was tunable at room temperature.

A review of theoretical study of graphene chemical vapor deposition synthesis on metals: nucleation, growth, and the role of hydrogen and oxygen

Graphene has attracted intense research interest due to its extraordinary properties and great application potential. Various methods have been proposed for the synthesis of graphene, among which chemical vapor deposition has drawn a great deal of attention for synthesizing large-area and high-quality graphene. Theoretical understanding of the synthesis mechanism is crucial for optimizing the experimental design for desired graphene production. In this review, we discuss the three fundamental steps of graphene synthesis in details, i.e. (1) decomposition of carbon feedstocks and formation of various active carbon species, (2) nucleation, and (3) attachment and extension. We provide a complete scenario of graphene synthesis on metal surfaces at atomistic level by means of density functional theory, molecular dynamics (MD), Monte Carlo (MC) and their combination and interface with other simulation methods such as quantum mechanical molecular dynamics, density functional tight binding molecular dynamics, and combination of MD and MC. We also address the latest investigation of the influences of the hydrogen and oxygen on the synthesis and the quality of the synthesized graphene.

Layer number identification of CVD-grown multilayer graphene using Si peak analysis

Since the successful exfoliation of graphene, various methodologies have been developed to identify the number of layers of exfoliated graphene. The optical contrast, Raman G-peak intensity, and 2D-peak line-shape are currently widely used as the first level of inspection for graphene samples. Although the combination analysis of G- and 2D-peaks is powerful for exfoliated graphene samples, its use is limited in chemical vapor deposition (CVD)-grown graphene because CVD-grown graphene consists of various domains with randomly rotated crystallographic axes between layers, which makes the G- and 2D-peaks analysis difficult for use in number identification. We report herein that the Raman Si-peak intensity can be a universal measure for the number identification of multilayered graphene. We synthesized a few-layered graphene via the CVD method and performed Raman spectroscopy. Moreover, we measured the Si-peak intensities from various individual graphene domains and correlated them with the corresponding layer numbers. We then compared the normalized Si-peak intensity of the CVD-grown multilayer graphene with the exfoliated multilayer graphene as a reference and successfully identified the layer number of the CVD-grown graphene. We believe that this Si-peak analysis can be further applied to various 2-dimensional (2D) materials prepared by both exfoliation and chemical growth.

Phase segregation enabled scandium fluoride–lanthanide fluoride Janus nanoparticles

A phase-segregation based protocol enables the fabrication of a series of scandium fluoride–lanthanide fluoride Janus particles.

Toward a Mechanistic Understanding of Vertical Growth of van der Waals Stacked 2D Materials: A Multiscale Model and Experiments

Vertical stacking of monolayers via van der Waals (vdW) interaction opens promising routes toward engineering physical properties of two-dimensional (2D) materials and designing atomically thin devices. However, due to the lack of mechanistic understanding, challenges remain in the controlled fabrication of these structures via scalable methods such as chemical vapor deposition (CVD) onto substrates. In this paper, we develop a general multiscale model to describe the size evolution of 2D layers and predict the necessary growth conditions for vertical (initial + subsequent layers) versus in-plane lateral (monolayer) growth. An analytic thermodynamic criterion is established for subsequent layer growth that depends on the sizes of both layers, the vdW interaction energies, and the edge energy of 2D layers. Considering the time-dependent growth process, we find that temperature and adatom flux from vapor are the primary criteria affecting the self-assembled growth. The proposed model clearly demonstrates the distinct roles of thermodynamic and kinetic mechanisms governing the final structure. Our model agrees with experimental observations of various monolayer and bilayer transition metal dichalcogenides grown by CVD and provides a predictive framework to guide the fabrication of vertically stacked 2D materials.

Two-Dimensional Hallmark of Highly Interconnected Three-Dimensional Nanoporous Graphene

Scaling graphene from a two-dimensional (2D) ideal structure to a three-dimensional (3D) millimeter-sized architecture without compromising its remarkable electrical, optical, and thermal properties is currently a great challenge to overcome the limitations of integrating single graphene flakes into 3D devices. Herewith, highly connected and continuous nanoporous graphene (NPG) samples, with electronic and vibrational properties very similar to those of suspended graphene layers, are presented. We pinpoint the hallmarks of 2D ideal graphene scaled in these 3D porous architectures by combining the state-of-the-art spectromicroscopy and imaging techniques. The connected and bicontinuous topology, without frayed borders and edges and with low density of crystalline defects, has been unveiled via helium ion, Raman, and transmission electron microscopies down to the atomic scale. Most importantly, nanoscanning photoemission unravels a 3D NPG structure with preserved 2D electronic density of states (Dirac cone like) throughout the porous sample. Furthermore, the high spatial resolution brings to light the interrelationship between the topology and the morphology in the wrinkled and highly bent regions, where distorted sp² C bonds, associated with sp³-like hybridization state, induce small energy gaps. This highly connected graphene structure with a 3D skeleton overcomes the limitations of small-sized individual graphene sheets and opens a new route for a plethora of applications of the 2D graphene properties in 3D devices.

Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/SiOx by Chemical Vapor Deposition

To synthesize graphene by chemical vapor deposition (CVD) both in large area and with uniform layer number directly over Si/SiO_x has proven challenging. The use of catalytically active metal substrates, in particular Cu, has shown far greater success and therefore is popular. That said, for electronics applications it requires a transfer procedure, which tends to damage and contaminate the graphene. Thus, the direct fabrication of uniform graphene on Si/SiO_x remains attractive. Here we show a facile confinement CVD approach in which we simply "sandwich" two Si wafers with their oxide faces in contact to form uniform monolayer graphene. A thorough examination of the material reveals it comprises faceted grains despite initially nucleating as round islands. Upon clustering, they facet to minimize their energy. This behavior leads to faceting in polygons, as the system aims to ideally form hexagons, the lowest energy form, much like the hexagonal cells in a beehive, which requires the minimum wax. This process also leads to a near minimal total grain boundary length per unit area. This fact, along with the high graphene quality, is reflected in its electrical performance, which is highly comparable with graphene formed over other substrates, including Cu. In addition, the graphene growth is self-terminating. Our CVD approach is easily scalable and will make graphene formation directly on Si wafers competitive against that from metal substrates, which suffer from transfer. Moreover, this CVD route should be applicable for the direct synthesis of other 2D materials and their van der Waals heterostructures.

Role of limited hydrogen and flow interval on the growth of single crystal to continuous graphene by low-pressure chemical vapor deposition

A method for defect-free large crystallite graphene growth remains unknown despite much research effort. In this work, we discuss the role of flow duration of H₂ gas for the production of graphene as per requirement and production at a minimum flow rate considering the safety issue of hydrogen utilization. The copper substrate used for growth was treated for different time intervals (0 to 35 min) in H₂ flow prior to growth. Structural and chemical changes occurring in the copper substrate surface were probed by grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy. The results were correlated with the Raman spectroscopy data, which can quantify the quality of graphene. With increasing H₂ flow interval, secondary nucleation sites were observed and growth favored few-layer graphene structures. The surface-adsorbed oxygen molecules and its conversion to an OH terminated surface with increasing hydrogen flow interval was found to be a key factor in enhancing nucleation density. The Stranski-Krastanov type of nucleation was observed for samples grown with different time intervals of H₂ treatment, except 5 min of H₂ flow prior to growth for which the Volmer-Weber type of growth favored monolayer graphene crystallite growth.