Mixed-Mode Operation of Hybrid Phase-Change Nanophotonic Circuits

Comparative evaluation of antimicrobial activity of spinel structured transition metal ferrites supported on reduced graphene oxide against pathogenic strains of bacteria and fungi

One of the global challenges for living things is to provide pollution and harmful microbes-free environment. In this study, magnetically retrievable spinel-structured manganese zinc ferrite (Mn0.5Zn0.5Fe2O4) (MZF) was synthesized by a facile solvothermal method. Further, the MZF with different weight percentages (10 wt%, 50 wt%, and 80 wt%) were supported on reduced graphene oxide (rGO). The phase purity and morphology of MZF and MZF/rGO nanocomposite were confirmed by x-ray diffraction technique and scanning electron microscopy, respectively. The Fourier transform infrared spectroscopy, Raman, UV-visible spectroscopy, and thermogravimetric analyses of the as-synthesized nanocomposites were examined for the detection of various chemical groups, band gap, and thermal properties, respectively. The MZF/rGO nanocomposite exhibited significant antibacterial and antifungal activity againstEggerthella lenta, Enterococcus faecalis, Klebsiella pneumonia, Pseudomonas aeruginosa,andCandida albicanscompared to bare MZF and rGO. The high surface area of rGO plays a crucible role in antimicrobial analysis. Additionally, the antibacterial and antifungal activity is compared by synthesizing various metal ferrites such as MnFe2O4, ZnFe2O4, and Fe3O4. The 50 wt% MZF/rGO nanocomposite exhibits significantly high antibacterial activity. However, 10 wt% MZF/rGO nanocomposite shows good antifungal activity than Fe3O4, MnFe2O4, ZnFe2O4, MnZnFe2O4, 50 wt%, and 80 wt% MZF/rGO nanocomposites. These findings suggest that the prepared ferrite nanocomposites hold promise for microbial inhibition.

LncRNAs: Emerging biomarkers and therapeutic targets in rectal cancer

According to findings, long non-coding RNAs (lncRNAs) have an important function in the onset and growth of various cancers, including rectal cancer (RC). RC offers unique issues in terms of diagnosis, treatment, and results, needing a full understanding of the cellular mechanisms that cause it to develop. This thorough study digs into the various functions that lncRNAs perform in RC, giving views into their multiple roles as well as possible therapeutic consequences. The function of lncRNAs in RC cell proliferation, apoptosis, migratory and infiltrating capacities, epithelial-mesenchymal shift, and therapy tolerance are discussed. Various lncRNA regulatory roles are investigated in depth, yielding information on their effect on essential cell functions such as angiogenesis, death, immunity, and growth. Systemic lncRNAs are currently acknowledged as potential indications for the initial stages of identification of cancer, with the ability to diagnose as well as forecast. Besides adding to their diagnostic utility, lncRNAs offer therapeutic opportunities as actors, contributing to the expanding landscape of cancer research. Moreover, the investigation looks into the assessment and predictive utility of lncRNAs as RC markers. The article also offers insight into lncRNAs as chemoresistance and drug resistance facilitators in the setting of RC.

Analysis of sandwich graphene origami composite plate sandwiched by piezoelectric/piezomagnetic layers: A higher-order electro-magneto-elastic analysis

This work applies a higher order thickness-stretched model for the electro-elastic analysis of the composite graphene origami reinforced square plate sandwiched by the piezoelectric/piezomagnetic layers subjected to the thermal, electric, magnetic and mechanical loads. The plate is manufactured of a copper matrix reinforced with graphene origami where the effective material properties are calculated based on the micromechanical models as a function of volume fraction and folding degree of graphene origami, material properties of matrix, reinforcement, and local temperature. The governing equations are derived using the virtual work principle in terms of the bending, shear and stretching functions, in-plane displacements, electric, and magnetic potentials. The numerical results including various displacement components, maximum electric, and magnetic potentials are presented with changes of volume fraction, folding degree of reinforcement, electrical, magnetic, and thermal loading. A verification investigation is presented for approve of the methodology, and the solution procedure. The main novelty of this work is simultaneous effect of the thickness stretching and the multi-field loading on the electromagnetic bending results of the sandwich plate. Another novelty of this work is usage of graphene origami nano-reinforcement as a controllable material in a sandwich structure subjected to multi-field loadings. The results show an increase in bending, shear, and stretching deflections with an increase in electromagnetic loads, and folding degree as well as a decrease in volume fraction of reinforcement.

Improvement of Multilevel Memory Performance of MnTe Thin Films by Ta Doping

The pressing need for data storage in the era of big data has driven the development of new storage technologies. As a prominent contender for next-generation memory, phase-change memory can effectively increase storage density through multilevel cell operation and can be applied to neuromorphic and in-memory computing. Herein, the structure and properties of Ta-doped MnTe thin films and their inherent correlations are systematically investigated. Amorphous MnTe thin films sequentially precipitated cubic MnTe2 and hexagonal Te phases with increasing temperature, causing resistance changes. Ta doping inhibited phase segregation in the films and improved their thermal stability in the amorphous state. A phase-change memory cell based on a Ta2.8%-MnTe thin film exhibited three stable resistive states with low resistive drift coefficients. The study findings reveal the possibility of regulating the two-step phase-change process in Ta-MnTe thin films, providing insight into the design of multilevel phase-change memory.

Revealing the Structural, Elastic, Electronic, and Optical Properties of K2ScCuCl6 and K2YCuCl6: An In-Depth Exploration Using Density Functional Theory

The optoelectronic, structural, and elastic properties of K2ScCuCl6 and K2YCuCl6 double perovskite compounds were thoroughly investigated in this study using density functional theory. It is observed that both compounds exhibit exceptional structural and mechanical stability. The structural stability is assessed using Goldsmith's tolerance factor (tG), with values approaching unity indicating a reliable cubic perovskite structure. Phonon stability was ensured by the absence of negative energy formations and only real frequencies in the phonon calculations. Applying the finite displacement method also provided further evidence of the compounds' thermodynamic stability. The electronic properties analysis revealed that K2ScCuCl6 and K2YCuCl6 are narrow band gap semiconductors, with band gap values of 1.8 and 2.5 eV, respectively. This was confirmed by analyzing the density of states. Furthermore, the optical properties exhibited transparency at lower photon energies and significant absorption at higher energies. These exciting findings suggest that K2ScCuCl6 and K2YCuCl6 have promising applications in high-frequency UV devices.

Analytical investigations of propagation of ultra-broad nonparaxial pulses in a birefringent optical waveguide by three computational ideas

This paper mainly concentrates on obtaining solutions and other exact traveling wave solutions using the generalized G-expansion method. Some new exact solutions of the coupled nonlinear Schrödinger system using the mentioned method are extracted. This method is based on the general properties of the nonlinear model of expansion method with the support of the complete discrimination system for polynomial method and computer algebraic system (AS) such as Maple or Mathematica. The nonparaxial solitons with the propagation of ultra-broad nonparaxial pulses in a birefringent optical waveguide is studied. To attain this, an illustrative case of the coupled nonlinear Helmholtz (CNLH) system is given to illustrate the possibility and unwavering quality of the strategy utilized in this research. These solutions can be significant in the use of understanding the behavior of wave guides when studying Kerr medium, optical computing and optical beams in Kerr like nonlinear media. Physical meanings of solutions are simulated by various Figures in 2D and 3D along with density graphs. The constraint conditions of the existence of solutions are also reported in detail. Finally, the modulation instability analysis of the CNLH equation is presented in detail.

Electrically Conductive Polymers for Additive Manufacturing

The use of electrically conductive polymers (CPs) in the development of electronic devices has attracted significant interest due to their unique intrinsic properties, which result from the synergistic combination of physicochemical properties in conventional polymers with the electronic properties of metals or semiconductors. Most conventional methods adopted for the fabrication of devices with nonplanar morphologies are still challenged by the poor ionic/electronic mobility of end products. Additive manufacturing (AM) brings about exciting prospects to the realm of CPs by enabling greater design freedom, more elaborate structures, quicker prototyping, relatively low cost, and more environmentally friendly electronic device creation. A growing variety of AM technologies are becoming available for three-dimensional (3D) printing of conductive devices, i.e., vat photopolymerization (VP), material extrusion (ME), powder bed fusion (PBF), material jetting (MJ), and lamination object manufacturing (LOM). In this review, we provide an overview of the recent research progress in the area of CPs developed for AM, which advances the design and development of future electronic devices. We consider different AM techniques, vis-à-vis, their development progress and respective challenges in printing CPs. We also discuss the material requirements and notable advances in 3D printing of CPs, as well as their potential electronic applications including wearable electronics, sensors, energy storage and conversion devices, etc. This review concludes with an outlook on AM of CPs.

Mo-based MXenes: Synthesis, properties, and applications

Ti-MXene allows a range of possibilities to tune their compositional stoichiometry due to their electronic and electrochemical properties. Other than conventionally explored Ti-MXene, there have been ample opportunities for the non-Ti-based MXenes, especially the emerging Mo-based MXenes. Mo-MXenes are established to be remarkable with optoelectronic and electrochemical properties, tuned energy, catalysis, and sensing applications. In this timely review, we systematically discuss the various organized synthesis procedures, associated experimental tunning parameters, physiochemical properties, structural evaluation, stability challenges, key findings, and a wide range of applications of emerging Mo-MXene over Ti-MXenes. We also critically examined the precise control of Mo-MXenes to cater to advanced applications by comprehensively evaluating the summary of recent studies using artificial intelligence and machine learning tools. The critical future perspectives, significant challenges, and possible outlooks for successfully developing and using Mo-MXenes for various practical applications are highlighted.

Effects of isotropic strain on the structure and transport properties of half-Heusler alloy BiBaK: a first-principles investigation

In this study, using density functional and Boltzmann transport theories, we systematically investigated the effects of tensile and compressive strains on the elastic properties, phonon dispersion relation, electronic structure, and transport properties of the half-Heusler compound BiBaK. We calculated the elastic constants and phonon dispersion curves for BiBaK, which demonstrated its mechanical and thermodynamic stability, respectively, under different isotropic strains. Further, calculations showed that the electronic structure and energy bandgap of BiBaK changed with the application of isotropic strain. A high power factor and low thermal conductivity are key to improving the performance of thermoelectric materials. The figure of merit of BiBaK is 0.6 when it is unstrained and reaches a maximum value of 0.93 at -9% compressive strain and a temperature of 1200 K, indicating that under isotropic compressive strain, BiBaK compounds are efficient thermoelectric materials for high-temperature applications.

Simulating an Integrated Photonic Image Classifier for Diffractive Neural Networks

The slowdown of Moore's law and the existence of the "von Neumann bottleneck" has led to electronic-based computing systems under von Neumann's architecture being unable to meet the fast-growing demand for artificial intelligence computing. However, all-optical diffractive neural networks provide a possible solution to this challenge. They can outperform conventional silicon-based electronic neural networks due to the significantly higher speed of the propagation of optical signals (≈108 m.s-1) compared to electrical signals (≈105 m.s-1), their parallelism in nature, and their low power consumption. The integrated diffractive deep neural network (ID2NN) uses an on-chip fully passive photonic approach to achieve the functionality of neural networks (matrix-vector operations) and can be fabricated via the CMOS process, which is technologically more amenable to implementing an artificial intelligence processor. In this paper, we present a detailed design framework for the integrated diffractive deep neural network and corresponding silicon-on-insulator integration implementation through Python-based simulations. The performance of our proposed ID2NN was evaluated by solving image classification problems using the MNIST dataset.

Simultaneous improvement of polarization and bandgap by finite solid solution engineering

A narrow-bandgap-induced potential field always results in decreased photovoltaic performance. Here, a finite solid solution was designed to explore the simultaneous improvement of the polarization property and bandgap obtained from the critical effect in which BiMnO3 (BM) enters the Na0.5Bi0.5TiO3 (NBT) crystal lattice, resulting in a strong lattice expansion; by contrast, the incorporation of Mn without a d-orbital weakened the orbital hybridization accompanied by Jahn-Teller (J-T) distortion to reduce the optical bandgap. A narrow bandgap of 2.90 eV and polarization of 65.9 μC cm-2 were achieved by finite solid solution engineering. The open-circuit voltage and the short-circuit current with a BM doping component of 0.04 reached as high as 1.1 V and 0.0132 mA cm-2, respectively. This work provides an optimized strategy for the mutual benefit of the polarization and bandgap by finite solid solution engineering.

Recent developments in Chalcogenide phase change material-based nanophotonics

There is now a deep interest in actively reconfigurable nanophotonics as they will enable the next generation of optical devices. Of the various alternatives being explored for reconfigurable nanophotonics, Chalcogenide phase change materials (PCMs) are considered highly promising owing to the nonvolatile nature of their phase change. Chalcogenide PCM nanophotonics can be broadly classified into integrated photonics (with guided wave light propagation) and Meta-optics (with free space light propagation). Despite some early comprehensive reviews, the pace of development in the last few years has shown the need for a topical review. Our comprehensive review covers recent progress on nanophotonic architectures, tuning mechanisms, and functionalities in tunable PCM Chalcogenides. In terms of integrated photonics, we identify novel PCM nanoantenna geometries, novel material utilization, the use of nanostructured waveguides, and sophisticated excitation pulsing schemes. On the meta-optics front, the breadth of functionalities has expanded, enabled by exploring design aspects for better performance. The review identifies immediate, and intermediate-term challenges and opportunities in (1) the development of novel chalcogenide PCM, (2) advance in tuning mechanism, and (3) formal inverse design methods, including machine learning augmented inverse design, and provides perspectives on these aspects. The topical review will interest researchers in further advancing this rapidly growing subfield of nanophotonics.

Neuromorphic Photonic Memory Devices Using Ultrafast, Non-Volatile Phase-Change Materials

The search for ultrafast photonic memory devices is inspired by the ever-increasing number of cloud-computing, supercomputing, and artificial-intelligence applications, together with the unique advantages of signal processing in the optical domain such as high speed, large bandwidth, and low energy consumption. By embracing silicon photonics with chalcogenide phase-change materials (PCMs), non-volatile integrated photonic memory is developed with promising potential in photonic integrated circuits and nanophotonic applications. While conventional PCMs suffer from slow crystallization speed, scandium-doped antimony telluride (SST) has been recently developed for ultrafast phase-change random-access memory applications. An ultrafast non-volatile photonic memory based on an SST thin film with a 2 ns write/erase speed is demonstrated, which is the fastest write/erase speed ever reported in integrated phase-change photonic devices. SST-based photonic memories exhibit multilevel capabilities and good stability at room temperature. By mapping the memory level to the biological synapse weight, an artificial neural network based on photonic memory devices is successfully established for image classification. Additionally, a reflective nanodisplay application using SST with optoelectronic modulation capabilities is demonstrated. Both the optical and electrical changes in SST during the phase transition and the fast-switching speed demonstrate their potential for use in photonic computing, neuromorphic computing, nanophotonics, and optoelectronic applications.

A Universal Pick-and-Place Assembly for Nanowires

With the introduction of techniques to grow highly functional nanowires of exotic materials and demonstrations of their potential in new applications, techniques for depositing nanowires on functional platforms have been an area of active interest. However, difficulties in handling individual nanowires with high accuracy and reliability have so far been a limiting factor in large-scale integration of high-quality nanowires. Here, a technique is demonstrated to transfer single nanowires reliably on virtually any platform, under ambient conditions. Functional nanowires of InP, AlGaAs, and GeTe on various patterned structures such as electrodes, nanophotonic devices, and even ultrathin transmission electron microscopy (TEM) membranes are transferred. It is shown that the versatility of this technique further enables to perform on-chip nano-optomechanical measurements of an InP nanowire for the first time via evanescent field coupling. Thus, this technique facilitates effortless integration of single nanowires into applications that were previously seen as cumbersome or even impractical, spanning a wide range from TEM studies to in situ electrical, optical, and mechanical characterization.

A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits

In this review we present some of the recent advances in the field of silicon nitride photonic integrated circuits. The review focuses on the material deposition techniques currently available, illustrating the capabilities of each technique. The review then expands on the functionalisation of the platform to achieve nonlinear processing, optical modulation, nonvolatile optical memories and integration with III-V materials to obtain lasing or gain capabilities.

Designing fast and efficient electrically driven phase change photonics using foundry compatible waveguide-integrated microheaters

Phase change chalcogenides such as Ge₂Sb₂Te₅ (GST) have recently enabled advanced optical devices for applications such as in-memory computing, reflective displays, tunable metasurfaces, and reconfigurable photonics. However, designing phase change optical devices with reliable and efficient electrical control is challenging due to the requirements of both high amorphization temperatures and extremely fast quenching rates for reversible switching. Here, we use a Multiphysics simulation framework to model three waveguide-integrated microheaters designed to switch optical phase change materials. We explore the effects of geometry, doping, and electrical pulse parameters to optimize the switching speed and minimize energy consumption in these optical devices.

Anomalous Photoelectrical Properties through Strain Engineering Based on a Single Bent InAsSb Nanowire

In this study, electrical and photoresponse properties of bent InAsSb nanowires (NWs) were investigated to explore the impact of bending strain on the photoelectrical properties. The corresponding morphological and structural observations demonstrate the phase segregation and strain in the core-shell zinc-blende-structured InAsSb NWs. It is found that the device made of bent InAsSb individual NW presents the switch from negative photoconductivity (NPC) and positive photoconductivity (PPC). The transformation between NPC and PPC can be achieved by not only gate voltage but also bias voltage, indicating the potential in the pervasive computing of bent InAsSb NWs. This work combines the semiconductor properties, light excitation, and piezoelectric effect of the InAsSb NWs, providing new ideas for next-generation photoelectrical nanodevices.

Modeling Electrical Switching of Nonvolatile Phase-Change Integrated Nanophotonic Structures with Graphene Heaters

Progress in integrated nanophotonics has enabled large-scale programmable photonic integrated circuits (PICs) for general-purpose electronic-photonic systems on a chip. Relying on the weak, volatile thermo-optic, or electro-optic effects, such systems usually exhibit limited reconfigurability along with high-energy consumption and large footprints. These challenges can be addressed by resorting to chalcogenide phase-change materials (PCMs) such as Ge₂Sb₂Te₅ (GST) that provide a substantial optical contrast in a self-holding fashion upon phase transitions. However, current PCM-based integrated photonic applications are limited to single devices or simple PICs because of the poor scalability of the optical or electrical self-heating actuation approaches. Thermal-conduction heating via external electrical heaters, instead, allows large-scale integration and large-area switching, but fast and energy-efficient electrical control is yet to be achieved. Here, we model electrical switching of GST-clad-integrated nanophotonic structures with graphene heaters based on the programmable GST-on-silicon platform. Thanks to the ultra-low heat capacity and high in-plane thermal conductivity of graphene, the proposed structures exhibit a high switching speed of ∼80 MHz and a high energy efficiency of 19.2 aJ/nm³ (6.6 aJ/nm³) for crystallization (amorphization) while achieving complete phase transitions to ensure strong attenuation (∼6.46 dB/μm) and optical phase (∼0.28 π/μm at 1550 nm) modulation. Compared with indium tin oxide and silicon p-i-n heaters, the structures with graphene heaters display two orders of magnitude higher figure of merits for heating and overall performance. Our work facilitates the analysis and understanding of the thermal-conduction heating-enabled phase transitions on PICs and supports the development of future large-scale PCM-based electronic-photonic systems.

The optimization effect of titanium on the phase change properties of SnSb4 thin films for phase change memory applications

Titanium-doped SnSb₄ phase-change thin film has been experimentally investigated for phase-change random access memory (PCRAM) use.

Plasmonic nanogap enhanced phase-change devices with dual electrical-optical functionality

Modern-day computers rely on electrical signaling for the processing and storage of data, which is bandwidth-limited and power hungry. This fact has long been realized in the communications field, where optical signaling is the norm. However, exploiting optical signaling in computing will require new on-chip devices that work seamlessly in both electrical and optical domains, without the need for repeated electrical-to-optical conversion. Phase-change devices can, in principle, provide such dual electrical-optical operation, but assimilating both functionalities into a single device has so far proved elusive owing to conflicting requirements of size-limited electrical switching and diffraction-limited optical response. Here, we combine plasmonics, photonics, and electronics to deliver an integrated phase-change memory cell that can be electrically or optically switched between binary or multilevel states. Crucially, this device can also be simultaneously read out both optically and electrically, offering a new strategy for merging computing and communications technologies.

In-memory computing on a photonic platform

Collocated data processing and storage are the norm in biological computing systems such as the mammalian brain. As our ability to create better hardware improves, new computational paradigms are being explored beyond von Neumann architectures. Integrated photonic circuits are an attractive solution for on-chip computing which can leverage the increased speed and bandwidth potential of the optical domain, and importantly, remove the need for electro-optical conversions. Here we show that we can combine integrated optics with collocated data storage and processing to enable all-photonic in-memory computations. By employing nonvolatile photonic elements based on the phase-change material, Ge₂Sb₂Te₅, we achieve direct scalar and matrix-vector multiplication, featuring a novel single-shot Write/Erase and a drift-free process. The output pulse, carrying the information of the light-matter interaction, is the result of the computation. Our all-optical approach is novel, easy to fabricate and operate, and sets the stage for development of entirely photonic computers.

Engineering Interface-Dependent Photoconductivity in Ge2Sb2Te5 Nanoscale Devices

Phase-change materials are increasingly being explored for photonics applications, ranging from high-resolution displays to artificial retinas. Surprisingly, our understanding of the underlying mechanism of light-matter interaction in these materials has been limited to photothermal crystallization because of its relevance in applications such as rewritable optical discs. Here, we report a photoconductivity study of nanoscale thin films of phase-change materials. We identify strong photoconductive behavior in phase-change materials, which we show to be a complex interplay of three independent mechanisms: photoconductive, photoinduced crystallization, and photoinduced thermoelectric effects. We find that these effects also congruously contribute to a substantial photovoltaic effect, even in notionally symmetric devices. Notably, we show that device engineering plays a decisive role in determining the dominant mechanism; the contribution of the photothermal effects to the extractable photocurrent can be reduced to <0.4% by varying the electrodes and device geometry. We then show that the contribution of these individual effects to the photoresponse is phase-dependent with the amorphous state being more photoactive than the crystalline state and that a reversible change occurs in the charge transport from thermionic to tunnelling during phase transformation. Finally, we demonstrate photodetectors with an order of magnitude tunability in photodetection responsivity and bandwidth using these materials. Our results provide insights to the photophysics of phase-change materials and highlight their potential in future optoelectronics.

Crystallization characteristic and scaling behavior of germanium antimony thin films for phase change memory

Amorphous Ge8Sb92 thin films with various thicknesses were deposited by magnetron sputtering. The crystallization kinetics and optical properties of the Ge8Sb92 thin films and related scaling effects were investigated by an in situ thermally induced method and an optical technique. With a decrease in film thickness, the crystallization temperature, crystallization activation energy and data retention ability increased significantly. The changed crystallization behavior may be ascribed to the smaller grain size and larger surface-to-volume ratio as the film thickness decreased. Regardless of whether the state was amorphous or crystalline, the film resistance increased remarkably as the film thickness decreased to 3 nm. The optical band gap calculated from the reflection spectra increases distinctly with a reduction in film thickness. X-ray diffraction patterns confirm that the scaling of the Ge8Sb92 thin film can inhibit the crystallization process and reduce the grain size. The values of exponent indices that were obtained indicate that the crystallization mechanism experiences a series of changes with scaling of the film thickness. The crystallization time was estimated to determine the scaling effect on the phase change speed. The scaling effect on the electrical switching performance of a phase change memory cell was also determined. The current-voltage and resistance-voltage characteristics indicate that phase change memory cells based on a thinner Ge8Sb92 film will exhibit a higher threshold voltage, lower RESET operational voltage and greater pulse width, which implies higher thermal stability, lower power consumption and relatively lower switching velocity.

Phase-change devices for simultaneous optical-electrical applications

We present a viable pathway to the design and characterization of phase-change devices operating in a mixed-mode optical-electrical, or optoelectronic, manner. Such devices have potential applications ranging from novel displays to optically-gated switches to reconfigurable metamaterials-based devices. With this in mind, a purpose-built optoelectronics probe station capable of simultaneous optical-electrical excitation and simultaneous optical-electrical response measurement has been designed and constructed. Two prototype phase-change devices that might exploit simultaneous optical and electrical effects and/or require simultaneous optical and electrical characterisation, namely a mixed-mode cross-bar type structure and a microheater-based structure, have been designed, fabricated and characterized. The microheater-based approach was shown to be capable of successful thermally-induced cycling, between amorphous and crystalline states, of large-area phase-change devices, making it attractive for practicable pixel fabrication in phase-change display applications.