1
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Hong S, Hong CU, Lee S, Jang M, Jang C, Lee Y, Widiapradja LJ, Park S, Kim K, Son YW, Yook JG, Im S. Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning. SCIENCE ADVANCES 2023; 9:eadh9770. [PMID: 37467332 DOI: 10.1126/sciadv.adh9770] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2023] [Accepted: 06/16/2023] [Indexed: 07/21/2023]
Abstract
Graphene, with superior electrical tunabilities, has arisen as a multifunctional insertion layer in vertically stacked devices. Although the role of graphene inserted in metal-semiconductor junctions has been well investigated in quasi-static charge transport regime, the implication of graphene insertion at ultrahigh frequencies has rarely been considered. Here, we demonstrate the diode operation of vertical Pt/n-MoSe2/graphene/Au assemblies at ~200-GHz cutoff frequency (fC). The electric charge modulation by the inserted graphene becomes essentially frozen above a few GHz frequencies due to graphene quantum capacitance-induced delay, so that the Ohmic graphene/MoSe2 junction may be transformed to a pinning-free Schottky junction. Our diodes exhibit much lower total capacitance than devices without graphene insertion, deriving an order of magnitude higher fC, which clearly demonstrates the merit of graphene at high frequencies.
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Affiliation(s)
- Sungjae Hong
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
| | - Chang-Ui Hong
- Department of Electrical Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Sol Lee
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Republic of Korea
| | - Myeongjin Jang
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Republic of Korea
| | - Chorom Jang
- Department of Electrical Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Yangjin Lee
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Republic of Korea
| | - Livia Janice Widiapradja
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
| | - Sam Park
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
| | - Kwanpyo Kim
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Republic of Korea
| | - Young-Woo Son
- School of Computational Sciences, Korea Institute for Advanced Study, Seoul 02455, Republic of Korea
| | - Jong-Gwan Yook
- Department of Electrical Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seongil Im
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
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2
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Mehrdadian A, Forooraghi K, Bideskan MZ. The method of lines extension for the analysis of multilayered graphene-loaded structures in cylindrical coordinates. Sci Rep 2022; 12:12734. [PMID: 35882916 PMCID: PMC9325698 DOI: 10.1038/s41598-022-17016-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/03/2021] [Accepted: 07/19/2022] [Indexed: 11/20/2022] Open
Abstract
In this paper the extended method of lines (E-MoL) is proposed for the analysis of multilayer graphene-loaded three dimensional structures in cylindrical coordinates. Accordingly, the impedance and admittance matrices are defined as the ratios of the electric and magnetic fields at each plane of the stack. The impedance and admittance parameters are transformed from the input to the output of the structure through layers and interfaces, from which, the scattering parameters are extracted. It is assumed that there is an anisotropic graphene layer at the interface of two successive layers. The impedance and admittance transformations at the interfaces are extracted in the cylindrical coordinates. Then the impedance and admittance values at all planes of the stack and consequently, the scattering parameters of the whole structure are derived. To validate the presented method, two validation benchmarks are provided at the microwave frequency band. A circular waveguide and a coaxial cable loaded with graphene plates are analyzed and the results are compared with those of CST simulation software which show good accordance. It is observed that the E-MoL, as a semi-analytical semi-numerical method, is much more time-efficient than the CST software numerical procedure.
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Affiliation(s)
- Ali Mehrdadian
- Department of Electrical and Computer Engineering, Tarbiat Modares University, Tehran, 14115-194, Iran. .,Iran National Science Foundation (INSF), Tehran, Iran.
| | - Keyvan Forooraghi
- Department of Electrical and Computer Engineering, Tarbiat Modares University, Tehran, 14115-194, Iran
| | - Mehri Ziaee Bideskan
- Department of Electrical and Computer Engineering, Tarbiat Modares University, Tehran, 14115-194, Iran
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3
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Zhao S, Deng ZY, Albalawi S, Wu Q, Chen L, Zhang H, Zhao XJ, Hou H, Hou S, Dong G, Yang Y, Shi J, Lambert CJ, Tan YZ, Hong W. Charge transport through single-molecule bilayer-graphene junctions with atomic thickness. Chem Sci 2022; 13:5854-5859. [PMID: 35685781 PMCID: PMC9132082 DOI: 10.1039/d1sc07024j] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/17/2021] [Accepted: 03/29/2022] [Indexed: 11/24/2022] Open
Abstract
The van der Waals interactions (vdW) between π-conjugated molecules offer new opportunities for fabricating heterojunction-based devices and investigating charge transport in heterojunctions with atomic thickness. In this work, we fabricate sandwiched single-molecule bilayer-graphene junctions via vdW interactions and characterize their electrical transport properties by employing the cross-plane break junction (XPBJ) technique. The experimental results show that the cross-plane charge transport through single-molecule junctions is determined by the size and layer number of molecular graphene in these junctions. Density functional theory (DFT) calculations reveal that the charge transport through molecular graphene in these molecular junctions is sensitive to the angles between the graphene flake and peripheral mesityl groups, and those rotated groups can be used to tune the electrical conductance. This study provides new insight into cross-plane charge transport in atomically thin junctions and highlights the role of through-space interactions in vdW heterojunctions at the molecular scale. Charge transport through single-molecule bilayer-graphene junctions fabricated by a cross-plane break junction technique can be tuned at the atomic level.![]()
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Affiliation(s)
- Shiqiang Zhao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University Xiamen 361005 China
| | - Ze-Ying Deng
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University Xiamen 361005 China
| | - Shadiah Albalawi
- Department of Physics, Lancaster University Lancaster LA1 4YB UK
| | - Qingqing Wu
- Department of Physics, Lancaster University Lancaster LA1 4YB UK
| | - Lijue Chen
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University Xiamen 361005 China
| | - Hewei Zhang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University Xiamen 361005 China
| | - Xin-Jing Zhao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University Xiamen 361005 China
| | - Hao Hou
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University Xiamen 361005 China
| | - Songjun Hou
- Department of Physics, Lancaster University Lancaster LA1 4YB UK
| | - Gang Dong
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University Xiamen 361005 China
| | - Yang Yang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University Xiamen 361005 China
| | - Jia Shi
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University Xiamen 361005 China
| | - Colin J Lambert
- Department of Physics, Lancaster University Lancaster LA1 4YB UK
| | - Yuan-Zhi Tan
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University Xiamen 361005 China
| | - Wenjing Hong
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University Xiamen 361005 China
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4
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Labed M, Sengouga N, Rim YS. Control of Ni/β-Ga 2O 3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:827. [PMID: 35269314 PMCID: PMC8912321 DOI: 10.3390/nano12050827] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/29/2022] [Revised: 02/20/2022] [Accepted: 02/26/2022] [Indexed: 02/06/2023]
Abstract
Controlling the Schottky barrier height (ϕB) and other parameters of Schottky barrier diodes (SBD) is critical for many applications. In this work, the effect of inserting a graphene interfacial monolayer between a Ni Schottky metal and a β-Ga2O3 semiconductor was investigated using numerical simulation. We confirmed that the simulation-based on Ni workfunction, interfacial trap concentration, and surface electron affinity was well-matched with the actual device characterization. Insertion of the graphene layer achieved a remarkable decrease in the barrier height (ϕB), from 1.32 to 0.43 eV, and in the series resistance (RS), from 60.3 to 2.90 mΩ.cm2. However, the saturation current (JS) increased from 1.26×10−11 to 8.3×10−7(A/cm2). The effects of a graphene bandgap and workfunction were studied. With an increase in the graphene workfunction and bandgap, the Schottky barrier height and series resistance increased and the saturation current decreased. This behavior was related to the tunneling rate variations in the graphene layer. Therefore, control of Schottky barrier diode output parameters was achieved by monitoring the tunneling rate in the graphene layer (through the control of the bandgap) and by controlling the Schottky barrier height according to the Schottky−Mott role (through the control of the workfunction). Furthermore, a zero-bandgap and low-workfunction graphene layer behaves as an ohmic contact, which is in agreement with published results.
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Affiliation(s)
- Madani Labed
- Laboratory of Semiconducting and Metallic Materials (LMSM), University of Biskra, Biskra 07000, Algeria; (M.L.); (N.S.)
| | - Nouredine Sengouga
- Laboratory of Semiconducting and Metallic Materials (LMSM), University of Biskra, Biskra 07000, Algeria; (M.L.); (N.S.)
| | - You Seung Rim
- Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Korea
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5
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Kidambi PR, Chaturvedi P, Moehring NK. Subatomic species transport through atomically thin membranes: Present and future applications. Science 2021; 374:eabd7687. [PMID: 34735245 DOI: 10.1126/science.abd7687] [Citation(s) in RCA: 30] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
[Figure: see text].
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Affiliation(s)
- Piran R Kidambi
- Department of Chemical and Bimolecular Engineering, Vanderbilt University, Nashville, TN, USA.,Vanderbilt Institute of Nanoscale Sciences and Engineering, Vanderbilt University, Nashville, TN, USA.,Department of Mechanical Engineering, Vanderbilt University, Nashville, TN, USA.,Interdisciplinary Graduate Program in Material Science, Vanderbilt University, Nashville, TN, USA
| | - Pavan Chaturvedi
- Department of Chemical and Bimolecular Engineering, Vanderbilt University, Nashville, TN, USA
| | - Nicole K Moehring
- Vanderbilt Institute of Nanoscale Sciences and Engineering, Vanderbilt University, Nashville, TN, USA.,Interdisciplinary Graduate Program in Material Science, Vanderbilt University, Nashville, TN, USA
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6
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Liu W, Li L, Guo H, Qadir A, Bodepudi SC, Shehzad K, Chen W, Xie YH, Wang X, Yu B, Xu Y. Approaching the Collection Limit in Hot Electron Transistors with Ambipolar Hot Carrier Transport. ACS NANO 2019; 13:14191-14197. [PMID: 31755701 DOI: 10.1021/acsnano.9b07020] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Hot electron transistors (HETs) containing two-dimensional (2D) materials promise great potential in high-frequency analog and digital applications. Here, we experimentally demonstrate all-2D van der Waals (vdW) HETs formed by graphene, hBN, and WSe2, in which the polarity of carriers could be tuned by changing bias conditions. We proposed a theoretical model to distinguish hot hole and hot electron components in the ambipolar vdW HET. Importantly, both hot hole and hot electron modes are achieved with pronounced saturation behavior as well as record-high collection efficiency approaching theoretical limits (99.9%) at room temperature. The vdW HETs show a maximum output current density of 400 A/cm2. The observed ambipolar hot carrier transport with high collection efficiency is promising for high-speed nanoelectronics and 2D hot electron spectroscopy.
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Affiliation(s)
- Wei Liu
- College of Information Science and Electronic Engineering, College of Microelectronics, Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications, ZJU Micro-Nano Fabrication Center , Zhejiang University , Hangzhou 310027 , China
| | - Lingfei Li
- College of Information Science and Electronic Engineering, College of Microelectronics, Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications, ZJU Micro-Nano Fabrication Center , Zhejiang University , Hangzhou 310027 , China
| | - Hongwei Guo
- College of Information Science and Electronic Engineering, College of Microelectronics, Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications, ZJU Micro-Nano Fabrication Center , Zhejiang University , Hangzhou 310027 , China
| | - Akeel Qadir
- College of Information Science and Electronic Engineering, College of Microelectronics, Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications, ZJU Micro-Nano Fabrication Center , Zhejiang University , Hangzhou 310027 , China
| | - Srikrishna Chanakya Bodepudi
- College of Information Science and Electronic Engineering, College of Microelectronics, Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications, ZJU Micro-Nano Fabrication Center , Zhejiang University , Hangzhou 310027 , China
| | - Khurram Shehzad
- College of Information Science and Electronic Engineering, College of Microelectronics, Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications, ZJU Micro-Nano Fabrication Center , Zhejiang University , Hangzhou 310027 , China
| | - Whenchao Chen
- College of Information Science and Electronic Engineering, College of Microelectronics, Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications, ZJU Micro-Nano Fabrication Center , Zhejiang University , Hangzhou 310027 , China
- Zhejiang University/University of Illinois at Urbana-Champaign Institute , Haining 314400 , China
| | - Ya-Hong Xie
- Department of Materials Science and Engineering , University of California , Los Angeles , California 90095 , United States
| | - Xiaomu Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructure , Nanjing University , Nanjing 210093 , China
| | - Bin Yu
- College of Information Science and Electronic Engineering, College of Microelectronics, Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications, ZJU Micro-Nano Fabrication Center , Zhejiang University , Hangzhou 310027 , China
| | - Yang Xu
- College of Information Science and Electronic Engineering, College of Microelectronics, Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications, ZJU Micro-Nano Fabrication Center , Zhejiang University , Hangzhou 310027 , China
- Zhejiang University/University of Illinois at Urbana-Champaign Institute , Haining 314400 , China
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7
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Zhao Y, Cai C, Zhang Y, Zhao X, Xu Y, Liang C, Niu Z, Shi Y, Che R. Control of electron tunnelling by fine band engineering of semiconductor potential barriers. NANOSCALE 2019; 11:21376-21385. [PMID: 31674609 DOI: 10.1039/c9nr03268a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Quantum tunnelling (QTN) devices show a promising future for energy saving and ultrafast operation thanks to the unprecedented development of two-dimensional materials. However, the immature techniques for device fabrication hamper severely their further progress and application. To overcome such a challenge, the abundant processing technology used in semiconductor electronics is worth considering. Herein, a device prototype is fabricated based on band engineering to enable flexible control of QTN probability (TP) within a III-V semiconductor multilayer. While the initial heights of all barriers are set to obtain similar TPs under no bias, the conduction band slopes of InGaSb and AlSb barriers are modulated to a state where their TPs vary reversely under electric fields. On this basis, revealed by in situ bias electron holography, a unidirectional accumulation of electrons has been realized inside the multilayer structure. Moreover, the inevitable element segregation/diffusion during device growth plays a key role in band structure optimization, which is confirmed by strain analysis. The feasibility of the above modulation strategy is also confirmed by theoretical simulations. Our findings might provide a new perspective on the innovation of semiconductor devices and the application of QTN effect.
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Affiliation(s)
- Yunhao Zhao
- Laboratory of Advanced Materials, Department of Materials Science and Collaborative Innovation Centre of Chemistry for Energy Materials, Fudan University, Shanghai 200438, P. R. China.
| | - Chenyuan Cai
- Laboratory of Advanced Materials, Department of Materials Science and Collaborative Innovation Centre of Chemistry for Energy Materials, Fudan University, Shanghai 200438, P. R. China.
| | - Yi Zhang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Xuebing Zhao
- Laboratory of Advanced Materials, Department of Materials Science and Collaborative Innovation Centre of Chemistry for Energy Materials, Fudan University, Shanghai 200438, P. R. China.
| | - Yingqiang Xu
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Chongyun Liang
- Department of Chemistry, Fudan University, Shanghai 200433, P. R. China
| | - Zhichuan Niu
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Yi Shi
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Renchao Che
- Laboratory of Advanced Materials, Department of Materials Science and Collaborative Innovation Centre of Chemistry for Energy Materials, Fudan University, Shanghai 200438, P. R. China.
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8
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Tsai SH, Lei S, Zhu X, Tsai SP, Yin G, Che X, Deng P, Ng J, Zhang X, Lin WH, Jin Z, Qasem H, Zhou Z, Vajtai R, Yeh NC, Ajayan P, Xie YH, Wang KL. Interfacial States and Fano-Feshbach Resonance in Graphene-Silicon Vertical Junction. NANO LETTERS 2019; 19:6765-6771. [PMID: 31545901 DOI: 10.1021/acs.nanolett.9b01658] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Interfacial quantum states are drawing tremendous attention recently because of their importance in design of low-dimensional quantum heterostructures with desired charge, spin, or topological properties. Although most studies of the interfacial exchange interactions were mainly performed across the interface vertically, the lateral transport nowadays is still a major experimental method to probe these interactions indirectly. In this Letter, we fabricated a graphene and hydrogen passivated silicon interface to study the interfacial exchange processes. For the first time we found and confirmed a novel interfacial quantum state, which is specific to the 2D-3D interface. The vertically propagating electrons from silicon to graphene result in electron oscillation states at the 2D-3D interface. A harmonic oscillator model is used to explain this interfacial state. In addition, the interaction between this interfacial state (discrete energy spectrum) and the lateral band structure of graphene (continuous energy spectrum) results in Fano-Feshbach resonance. Our results show that the conventional description of the interfacial interaction in low-dimensional systems is valid only in considering the lateral band structure and its density-of-states and is incomplete for the ease of vertical transport. Our experimental observation and theoretical explanation provide more insightful understanding of various interfacial effects in low-dimensional materials, such as proximity effect, quantum tunneling, etc. More important, the Fano-Feshbach resonance may be used to realize all solid-state and scalable quantum interferometers.
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Affiliation(s)
- Shin-Hung Tsai
- Device Research Laboratory, Department of Electrical Engineering , University of California , Los Angeles, 420 Westwood Plaza , Los Angeles , California 90095 , United States
- Department of Materials Science and Engineering , University of California , Los Angeles, 410 Westwood Plaza , Los Angeles , California 90095 , United States
| | - Sidong Lei
- Device Research Laboratory, Department of Electrical Engineering , University of California , Los Angeles, 420 Westwood Plaza , Los Angeles , California 90095 , United States
- Department of Physics and Astronomy , Georgia State University , 25 Park PI NE , Atlanta , Gerogia 30303 , United States
| | - Xiaodan Zhu
- Device Research Laboratory, Department of Electrical Engineering , University of California , Los Angeles, 420 Westwood Plaza , Los Angeles , California 90095 , United States
- Department of Materials Science and Engineering , University of California , Los Angeles, 410 Westwood Plaza , Los Angeles , California 90095 , United States
| | - Shiao-Po Tsai
- Device Research Laboratory, Department of Electrical Engineering , University of California , Los Angeles, 420 Westwood Plaza , Los Angeles , California 90095 , United States
| | - Gen Yin
- Device Research Laboratory, Department of Electrical Engineering , University of California , Los Angeles, 420 Westwood Plaza , Los Angeles , California 90095 , United States
| | - Xiaoyu Che
- Device Research Laboratory, Department of Electrical Engineering , University of California , Los Angeles, 420 Westwood Plaza , Los Angeles , California 90095 , United States
| | - Peng Deng
- Device Research Laboratory, Department of Electrical Engineering , University of California , Los Angeles, 420 Westwood Plaza , Los Angeles , California 90095 , United States
| | - Jimmy Ng
- Department of Materials Science and Engineering , University of California , Los Angeles, 410 Westwood Plaza , Los Angeles , California 90095 , United States
| | - Xiang Zhang
- Department of Materials Science and Nano Engineering , Rice University , 6100 Main Street , Houston , Texas 77005 , United States
| | - Wei-Hsiang Lin
- Department of Applied Physics and Materials Science , California Institute of Technology , 1200 East California Boulevard , Pasadena , California 91125 , United States
| | - Zehua Jin
- Department of Materials Science and Nano Engineering , Rice University , 6100 Main Street , Houston , Texas 77005 , United States
| | - Hussam Qasem
- Device Research Laboratory, Department of Electrical Engineering , University of California , Los Angeles, 420 Westwood Plaza , Los Angeles , California 90095 , United States
- National Center for Solar Energy Technology , Energy and Water Research Institute , King City for Science and Technology , Riyadh 114442 , Saudi Arabia
| | - Zhongpo Zhou
- College of Physics and Material Science , Henan Normal University , Xinxiang 453007 , China
| | - Robert Vajtai
- Department of Materials Science and Nano Engineering , Rice University , 6100 Main Street , Houston , Texas 77005 , United States
| | - Nai-Chang Yeh
- Department of Applied Physics and Materials Science , California Institute of Technology , 1200 East California Boulevard , Pasadena , California 91125 , United States
| | - Pulickel Ajayan
- Department of Materials Science and Nano Engineering , Rice University , 6100 Main Street , Houston , Texas 77005 , United States
| | - Ya-Hong Xie
- Department of Materials Science and Engineering , University of California , Los Angeles, 410 Westwood Plaza , Los Angeles , California 90095 , United States
| | - Kang L Wang
- Device Research Laboratory, Department of Electrical Engineering , University of California , Los Angeles, 420 Westwood Plaza , Los Angeles , California 90095 , United States
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9
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Courtin J, Le Gall S, Chrétien P, Moréac A, Delhaye G, Lépine B, Tricot S, Turban P, Schieffer P, Le Breton JC. A low Schottky barrier height and transport mechanism in gold-graphene-silicon (001) heterojunctions. NANOSCALE ADVANCES 2019; 1:3372-3378. [PMID: 36133562 PMCID: PMC9418477 DOI: 10.1039/c9na00393b] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2019] [Accepted: 07/25/2019] [Indexed: 06/13/2023]
Abstract
The interface resistance at metal/semiconductor junctions has been a key issue for decades. The control of this resistance is dependent on the possibility to tune the Schottky barrier height. However, Fermi level pinning in these systems forbids a total control over interface resistance. The introduction of 2D crystals between semiconductor surfaces and metals may be an interesting route towards this goal. In this work, we study the influence of the introduction of a graphene monolayer between a metal and silicon on the Schottky barrier height. We used X-ray photoemission spectroscopy to rule out the presence of oxides at the interface, the absence of pinning of the Fermi level and the strong reduction of the Schottky barrier height. We then performed a multiscale transport analysis to determine the transport mechanism. The consistency in the measured barrier height at different scales confirms the good quality of our junctions and the role of graphene in the drastic reduction of the barrier height.
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Affiliation(s)
- Jules Courtin
- Univ. Rennes, CNRS, IPR (Institut de Physique de Rennes), UMR 6251 F-35000 Rennes France
- Département Matériaux et Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS, Université de Rennes 1 Campus de Beaulieu, Bât 11E 35042 Rennes cedex France
| | - Sylvain Le Gall
- Group of Electrical Engineering Paris (GeePs), CNRS, CentraleSupélec, Univ. Paris-Sud, Sorbonne Université, CEDEX 11 rue Joliot-Curie 91192 Gif-sur-Yvette France
| | - Pascal Chrétien
- Group of Electrical Engineering Paris (GeePs), CNRS, CentraleSupélec, Univ. Paris-Sud, Sorbonne Université, CEDEX 11 rue Joliot-Curie 91192 Gif-sur-Yvette France
| | - Alain Moréac
- Univ. Rennes, CNRS, IPR (Institut de Physique de Rennes), UMR 6251 F-35000 Rennes France
- Département Matériaux et Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS, Université de Rennes 1 Campus de Beaulieu, Bât 11E 35042 Rennes cedex France
| | - Gabriel Delhaye
- Univ. Rennes, CNRS, IPR (Institut de Physique de Rennes), UMR 6251 F-35000 Rennes France
- Département Matériaux et Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS, Université de Rennes 1 Campus de Beaulieu, Bât 11E 35042 Rennes cedex France
| | - Bruno Lépine
- Univ. Rennes, CNRS, IPR (Institut de Physique de Rennes), UMR 6251 F-35000 Rennes France
- Département Matériaux et Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS, Université de Rennes 1 Campus de Beaulieu, Bât 11E 35042 Rennes cedex France
| | - Sylvain Tricot
- Univ. Rennes, CNRS, IPR (Institut de Physique de Rennes), UMR 6251 F-35000 Rennes France
- Département Matériaux et Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS, Université de Rennes 1 Campus de Beaulieu, Bât 11E 35042 Rennes cedex France
| | - Pascal Turban
- Univ. Rennes, CNRS, IPR (Institut de Physique de Rennes), UMR 6251 F-35000 Rennes France
- Département Matériaux et Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS, Université de Rennes 1 Campus de Beaulieu, Bât 11E 35042 Rennes cedex France
| | - Philippe Schieffer
- Univ. Rennes, CNRS, IPR (Institut de Physique de Rennes), UMR 6251 F-35000 Rennes France
- Département Matériaux et Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS, Université de Rennes 1 Campus de Beaulieu, Bât 11E 35042 Rennes cedex France
| | - Jean-Christophe Le Breton
- Univ. Rennes, CNRS, IPR (Institut de Physique de Rennes), UMR 6251 F-35000 Rennes France
- Département Matériaux et Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS, Université de Rennes 1 Campus de Beaulieu, Bât 11E 35042 Rennes cedex France
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