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Tsai SH, Lei S, Zhu X, Tsai SP, Yin G, Che X, Deng P, Ng J, Zhang X, Lin WH, Jin Z, Qasem H, Zhou Z, Vajtai R, Yeh NC, Ajayan P, Xie YH, Wang KL. Interfacial States and Fano-Feshbach Resonance in Graphene-Silicon Vertical Junction. Nano Lett 2019; 19:6765-6771. [PMID: 31545901 DOI: 10.1021/acs.nanolett.9b01658] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Interfacial quantum states are drawing tremendous attention recently because of their importance in design of low-dimensional quantum heterostructures with desired charge, spin, or topological properties. Although most studies of the interfacial exchange interactions were mainly performed across the interface vertically, the lateral transport nowadays is still a major experimental method to probe these interactions indirectly. In this Letter, we fabricated a graphene and hydrogen passivated silicon interface to study the interfacial exchange processes. For the first time we found and confirmed a novel interfacial quantum state, which is specific to the 2D-3D interface. The vertically propagating electrons from silicon to graphene result in electron oscillation states at the 2D-3D interface. A harmonic oscillator model is used to explain this interfacial state. In addition, the interaction between this interfacial state (discrete energy spectrum) and the lateral band structure of graphene (continuous energy spectrum) results in Fano-Feshbach resonance. Our results show that the conventional description of the interfacial interaction in low-dimensional systems is valid only in considering the lateral band structure and its density-of-states and is incomplete for the ease of vertical transport. Our experimental observation and theoretical explanation provide more insightful understanding of various interfacial effects in low-dimensional materials, such as proximity effect, quantum tunneling, etc. More important, the Fano-Feshbach resonance may be used to realize all solid-state and scalable quantum interferometers.
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Affiliation(s)
- Shin-Hung Tsai
- Device Research Laboratory, Department of Electrical Engineering , University of California , Los Angeles, 420 Westwood Plaza , Los Angeles , California 90095 , United States
- Department of Materials Science and Engineering , University of California , Los Angeles, 410 Westwood Plaza , Los Angeles , California 90095 , United States
| | - Sidong Lei
- Device Research Laboratory, Department of Electrical Engineering , University of California , Los Angeles, 420 Westwood Plaza , Los Angeles , California 90095 , United States
- Department of Physics and Astronomy , Georgia State University , 25 Park PI NE , Atlanta , Gerogia 30303 , United States
| | - Xiaodan Zhu
- Device Research Laboratory, Department of Electrical Engineering , University of California , Los Angeles, 420 Westwood Plaza , Los Angeles , California 90095 , United States
- Department of Materials Science and Engineering , University of California , Los Angeles, 410 Westwood Plaza , Los Angeles , California 90095 , United States
| | - Shiao-Po Tsai
- Device Research Laboratory, Department of Electrical Engineering , University of California , Los Angeles, 420 Westwood Plaza , Los Angeles , California 90095 , United States
| | - Gen Yin
- Device Research Laboratory, Department of Electrical Engineering , University of California , Los Angeles, 420 Westwood Plaza , Los Angeles , California 90095 , United States
| | - Xiaoyu Che
- Device Research Laboratory, Department of Electrical Engineering , University of California , Los Angeles, 420 Westwood Plaza , Los Angeles , California 90095 , United States
| | - Peng Deng
- Device Research Laboratory, Department of Electrical Engineering , University of California , Los Angeles, 420 Westwood Plaza , Los Angeles , California 90095 , United States
| | - Jimmy Ng
- Department of Materials Science and Engineering , University of California , Los Angeles, 410 Westwood Plaza , Los Angeles , California 90095 , United States
| | - Xiang Zhang
- Department of Materials Science and Nano Engineering , Rice University , 6100 Main Street , Houston , Texas 77005 , United States
| | - Wei-Hsiang Lin
- Department of Applied Physics and Materials Science , California Institute of Technology , 1200 East California Boulevard , Pasadena , California 91125 , United States
| | - Zehua Jin
- Department of Materials Science and Nano Engineering , Rice University , 6100 Main Street , Houston , Texas 77005 , United States
| | - Hussam Qasem
- Device Research Laboratory, Department of Electrical Engineering , University of California , Los Angeles, 420 Westwood Plaza , Los Angeles , California 90095 , United States
- National Center for Solar Energy Technology , Energy and Water Research Institute , King City for Science and Technology , Riyadh 114442 , Saudi Arabia
| | - Zhongpo Zhou
- College of Physics and Material Science , Henan Normal University , Xinxiang 453007 , China
| | - Robert Vajtai
- Department of Materials Science and Nano Engineering , Rice University , 6100 Main Street , Houston , Texas 77005 , United States
| | - Nai-Chang Yeh
- Department of Applied Physics and Materials Science , California Institute of Technology , 1200 East California Boulevard , Pasadena , California 91125 , United States
| | - Pulickel Ajayan
- Department of Materials Science and Nano Engineering , Rice University , 6100 Main Street , Houston , Texas 77005 , United States
| | - Ya-Hong Xie
- Department of Materials Science and Engineering , University of California , Los Angeles, 410 Westwood Plaza , Los Angeles , California 90095 , United States
| | - Kang L Wang
- Device Research Laboratory, Department of Electrical Engineering , University of California , Los Angeles, 420 Westwood Plaza , Los Angeles , California 90095 , United States
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